FR2620862B1 - Montage en parallele de transistors mos de puissance - Google Patents

Montage en parallele de transistors mos de puissance

Info

Publication number
FR2620862B1
FR2620862B1 FR8713094A FR8713094A FR2620862B1 FR 2620862 B1 FR2620862 B1 FR 2620862B1 FR 8713094 A FR8713094 A FR 8713094A FR 8713094 A FR8713094 A FR 8713094A FR 2620862 B1 FR2620862 B1 FR 2620862B1
Authority
FR
France
Prior art keywords
mos transistors
power mos
parallel mounting
mounting
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8713094A
Other languages
English (en)
Other versions
FR2620862A1 (fr
Inventor
Andre Lhorte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thomson Semiconducteurs SA
Original Assignee
Thomson Semiconducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Semiconducteurs SA filed Critical Thomson Semiconducteurs SA
Priority to FR8713094A priority Critical patent/FR2620862B1/fr
Publication of FR2620862A1 publication Critical patent/FR2620862A1/fr
Application granted granted Critical
Publication of FR2620862B1 publication Critical patent/FR2620862B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/05553—Shape in top view being rectangular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01058—Cerium [Ce]
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    • H01L2924/013—Alloys
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    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
FR8713094A 1987-09-17 1987-09-17 Montage en parallele de transistors mos de puissance Expired - Fee Related FR2620862B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8713094A FR2620862B1 (fr) 1987-09-17 1987-09-17 Montage en parallele de transistors mos de puissance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8713094A FR2620862B1 (fr) 1987-09-17 1987-09-17 Montage en parallele de transistors mos de puissance

Publications (2)

Publication Number Publication Date
FR2620862A1 FR2620862A1 (fr) 1989-03-24
FR2620862B1 true FR2620862B1 (fr) 1990-04-06

Family

ID=9355117

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8713094A Expired - Fee Related FR2620862B1 (fr) 1987-09-17 1987-09-17 Montage en parallele de transistors mos de puissance

Country Status (1)

Country Link
FR (1) FR2620862B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2652983B1 (fr) * 1989-10-11 1993-04-30 Alsthom Gec Montage en cascade d'etages de transistors en parallele realise en circuit hybride.
EP0499707B1 (fr) * 1991-02-22 1996-04-03 Asea Brown Boveri Ag Composant semi-conducteur de puissance à commande d'extinction
DE10102359A1 (de) 2001-01-19 2002-08-01 Siemens Ag Schaltungsanordnung mit in Chips angeordneten Halbleiterbauelementen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032960A (en) * 1975-01-30 1977-06-28 General Electric Company Anisotropic resistor for electrical feed throughs
IT1212708B (it) * 1983-02-28 1989-11-30 Ates Componenti Elettron Dispositivo di potenza a semiconduttore costituito da una molteplicita' di elementi attivi uguali collegati in parallelo.

Also Published As

Publication number Publication date
FR2620862A1 (fr) 1989-03-24

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