AT303819B - Schutzvorrichtung für einen Feldeffekttransistor mit isolierter Torelektrode - Google Patents

Schutzvorrichtung für einen Feldeffekttransistor mit isolierter Torelektrode

Info

Publication number
AT303819B
AT303819B AT968469A AT968469A AT303819B AT 303819 B AT303819 B AT 303819B AT 968469 A AT968469 A AT 968469A AT 968469 A AT968469 A AT 968469A AT 303819 B AT303819 B AT 303819B
Authority
AT
Austria
Prior art keywords
gate electrode
field effect
effect transistor
protection device
insulated gate
Prior art date
Application number
AT968469A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT303819B publication Critical patent/AT303819B/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
AT968469A 1968-10-16 1969-10-14 Schutzvorrichtung für einen Feldeffekttransistor mit isolierter Torelektrode AT303819B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681803392 DE1803392A1 (de) 1968-10-16 1968-10-16 Schutzvorrichtung fuer einen Feldeffekttransistor

Publications (1)

Publication Number Publication Date
AT303819B true AT303819B (de) 1972-12-11

Family

ID=5710660

Family Applications (1)

Application Number Title Priority Date Filing Date
AT968469A AT303819B (de) 1968-10-16 1969-10-14 Schutzvorrichtung für einen Feldeffekttransistor mit isolierter Torelektrode

Country Status (7)

Country Link
AT (1) AT303819B (enrdf_load_stackoverflow)
CH (1) CH497795A (enrdf_load_stackoverflow)
DE (1) DE1803392A1 (enrdf_load_stackoverflow)
FR (1) FR2020823A1 (enrdf_load_stackoverflow)
GB (1) GB1229385A (enrdf_load_stackoverflow)
NL (1) NL6913792A (enrdf_load_stackoverflow)
SE (1) SE343431B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910587B2 (ja) * 1977-08-10 1984-03-09 株式会社日立製作所 半導体装置の保護装置
KR920007171A (ko) * 1990-09-05 1992-04-28 김광호 고신뢰성 반도체장치
DE102006052863B4 (de) * 2006-11-09 2018-03-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schutzstruktur für Halbleitersensoren und deren Verwendung
US9514995B1 (en) 2015-05-21 2016-12-06 Globalfoundries Inc. Implant-free punch through doping layer formation for bulk FinFET structures

Also Published As

Publication number Publication date
NL6913792A (enrdf_load_stackoverflow) 1970-04-20
SE343431B (enrdf_load_stackoverflow) 1972-03-06
FR2020823A1 (enrdf_load_stackoverflow) 1970-07-17
DE1803392A1 (de) 1970-06-18
CH497795A (de) 1970-10-15
GB1229385A (enrdf_load_stackoverflow) 1971-04-21

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