GB1229385A - - Google Patents
Info
- Publication number
- GB1229385A GB1229385A GB1229385DA GB1229385A GB 1229385 A GB1229385 A GB 1229385A GB 1229385D A GB1229385D A GB 1229385DA GB 1229385 A GB1229385 A GB 1229385A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon nitride
- oct
- igfet
- layer
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681803392 DE1803392A1 (de) | 1968-10-16 | 1968-10-16 | Schutzvorrichtung fuer einen Feldeffekttransistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1229385A true GB1229385A (enrdf_load_stackoverflow) | 1971-04-21 |
Family
ID=5710660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1229385D Expired GB1229385A (enrdf_load_stackoverflow) | 1968-10-16 | 1969-10-15 |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT303819B (enrdf_load_stackoverflow) |
| CH (1) | CH497795A (enrdf_load_stackoverflow) |
| DE (1) | DE1803392A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2020823A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1229385A (enrdf_load_stackoverflow) |
| NL (1) | NL6913792A (enrdf_load_stackoverflow) |
| SE (1) | SE343431B (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2247779A (en) * | 1990-09-05 | 1992-03-11 | Samsung Electronics Co Ltd | Semiconductor device tolerant of electrostatic discharge |
| US7728363B2 (en) | 2006-11-09 | 2010-06-01 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Protective structure for semiconductor sensors |
| US9514995B1 (en) | 2015-05-21 | 2016-12-06 | Globalfoundries Inc. | Implant-free punch through doping layer formation for bulk FinFET structures |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5910587B2 (ja) * | 1977-08-10 | 1984-03-09 | 株式会社日立製作所 | 半導体装置の保護装置 |
-
1968
- 1968-10-16 DE DE19681803392 patent/DE1803392A1/de active Pending
-
1969
- 1969-09-10 NL NL6913792A patent/NL6913792A/xx unknown
- 1969-10-13 CH CH1531069A patent/CH497795A/de not_active IP Right Cessation
- 1969-10-14 AT AT968469A patent/AT303819B/de not_active IP Right Cessation
- 1969-10-15 GB GB1229385D patent/GB1229385A/en not_active Expired
- 1969-10-15 FR FR6935296A patent/FR2020823A1/fr not_active Withdrawn
- 1969-10-16 SE SE14241/69A patent/SE343431B/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2247779A (en) * | 1990-09-05 | 1992-03-11 | Samsung Electronics Co Ltd | Semiconductor device tolerant of electrostatic discharge |
| US7728363B2 (en) | 2006-11-09 | 2010-06-01 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Protective structure for semiconductor sensors |
| US9514995B1 (en) | 2015-05-21 | 2016-12-06 | Globalfoundries Inc. | Implant-free punch through doping layer formation for bulk FinFET structures |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6913792A (enrdf_load_stackoverflow) | 1970-04-20 |
| AT303819B (de) | 1972-12-11 |
| SE343431B (enrdf_load_stackoverflow) | 1972-03-06 |
| FR2020823A1 (enrdf_load_stackoverflow) | 1970-07-17 |
| DE1803392A1 (de) | 1970-06-18 |
| CH497795A (de) | 1970-10-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |