CH497795A - Feldeffekttransistor mit einer Schutzdiode - Google Patents

Feldeffekttransistor mit einer Schutzdiode

Info

Publication number
CH497795A
CH497795A CH1531069A CH1531069A CH497795A CH 497795 A CH497795 A CH 497795A CH 1531069 A CH1531069 A CH 1531069A CH 1531069 A CH1531069 A CH 1531069A CH 497795 A CH497795 A CH 497795A
Authority
CH
Switzerland
Prior art keywords
field effect
effect transistor
protective diode
diode
protective
Prior art date
Application number
CH1531069A
Other languages
German (de)
English (en)
Inventor
Klaus Dipl Ing Reindl
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH497795A publication Critical patent/CH497795A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
CH1531069A 1968-10-16 1969-10-13 Feldeffekttransistor mit einer Schutzdiode CH497795A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681803392 DE1803392A1 (de) 1968-10-16 1968-10-16 Schutzvorrichtung fuer einen Feldeffekttransistor

Publications (1)

Publication Number Publication Date
CH497795A true CH497795A (de) 1970-10-15

Family

ID=5710660

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1531069A CH497795A (de) 1968-10-16 1969-10-13 Feldeffekttransistor mit einer Schutzdiode

Country Status (7)

Country Link
AT (1) AT303819B (enrdf_load_stackoverflow)
CH (1) CH497795A (enrdf_load_stackoverflow)
DE (1) DE1803392A1 (enrdf_load_stackoverflow)
FR (1) FR2020823A1 (enrdf_load_stackoverflow)
GB (1) GB1229385A (enrdf_load_stackoverflow)
NL (1) NL6913792A (enrdf_load_stackoverflow)
SE (1) SE343431B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5910587B2 (ja) * 1977-08-10 1984-03-09 株式会社日立製作所 半導体装置の保護装置
KR920007171A (ko) * 1990-09-05 1992-04-28 김광호 고신뢰성 반도체장치
DE102006052863B4 (de) * 2006-11-09 2018-03-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schutzstruktur für Halbleitersensoren und deren Verwendung
US9514995B1 (en) 2015-05-21 2016-12-06 Globalfoundries Inc. Implant-free punch through doping layer formation for bulk FinFET structures

Also Published As

Publication number Publication date
NL6913792A (enrdf_load_stackoverflow) 1970-04-20
AT303819B (de) 1972-12-11
SE343431B (enrdf_load_stackoverflow) 1972-03-06
FR2020823A1 (enrdf_load_stackoverflow) 1970-07-17
DE1803392A1 (de) 1970-06-18
GB1229385A (enrdf_load_stackoverflow) 1971-04-21

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Legal Events

Date Code Title Description
PL Patent ceased