CH497795A - Field effect transistor with a protective diode - Google Patents
Field effect transistor with a protective diodeInfo
- Publication number
- CH497795A CH497795A CH1531069A CH1531069A CH497795A CH 497795 A CH497795 A CH 497795A CH 1531069 A CH1531069 A CH 1531069A CH 1531069 A CH1531069 A CH 1531069A CH 497795 A CH497795 A CH 497795A
- Authority
- CH
- Switzerland
- Prior art keywords
- field effect
- effect transistor
- protective diode
- diode
- protective
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 230000001681 protective effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681803392 DE1803392A1 (en) | 1968-10-16 | 1968-10-16 | Protection device for a field effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH497795A true CH497795A (en) | 1970-10-15 |
Family
ID=5710660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1531069A CH497795A (en) | 1968-10-16 | 1969-10-13 | Field effect transistor with a protective diode |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT303819B (en) |
| CH (1) | CH497795A (en) |
| DE (1) | DE1803392A1 (en) |
| FR (1) | FR2020823A1 (en) |
| GB (1) | GB1229385A (en) |
| NL (1) | NL6913792A (en) |
| SE (1) | SE343431B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5910587B2 (en) * | 1977-08-10 | 1984-03-09 | 株式会社日立製作所 | Semiconductor device protection device |
| KR920007171A (en) * | 1990-09-05 | 1992-04-28 | 김광호 | High Reliability Semiconductor Device |
| DE102006052863B4 (en) | 2006-11-09 | 2018-03-01 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Protective structure for semiconductor sensors and their use |
| US9514995B1 (en) | 2015-05-21 | 2016-12-06 | Globalfoundries Inc. | Implant-free punch through doping layer formation for bulk FinFET structures |
-
1968
- 1968-10-16 DE DE19681803392 patent/DE1803392A1/en active Pending
-
1969
- 1969-09-10 NL NL6913792A patent/NL6913792A/xx unknown
- 1969-10-13 CH CH1531069A patent/CH497795A/en not_active IP Right Cessation
- 1969-10-14 AT AT968469A patent/AT303819B/en not_active IP Right Cessation
- 1969-10-15 GB GB1229385D patent/GB1229385A/en not_active Expired
- 1969-10-15 FR FR6935296A patent/FR2020823A1/fr not_active Withdrawn
- 1969-10-16 SE SE1424169A patent/SE343431B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE343431B (en) | 1972-03-06 |
| AT303819B (en) | 1972-12-11 |
| FR2020823A1 (en) | 1970-07-17 |
| GB1229385A (en) | 1971-04-21 |
| NL6913792A (en) | 1970-04-20 |
| DE1803392A1 (en) | 1970-06-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |