CH449799A - Diodenlaser - Google Patents

Diodenlaser

Info

Publication number
CH449799A
CH449799A CH335367A CH335367A CH449799A CH 449799 A CH449799 A CH 449799A CH 335367 A CH335367 A CH 335367A CH 335367 A CH335367 A CH 335367A CH 449799 A CH449799 A CH 449799A
Authority
CH
Switzerland
Prior art keywords
diode laser
diode
laser
Prior art date
Application number
CH335367A
Other languages
English (en)
Inventor
Deutsch Christian
Original Assignee
Inst Angewandte Physik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Angewandte Physik filed Critical Inst Angewandte Physik
Priority to CH335367A priority Critical patent/CH449799A/de
Priority to DE19671589967 priority patent/DE1589967C/de
Priority to FR126163A priority patent/FR1542020A/fr
Priority to NL6715182A priority patent/NL6715182A/xx
Publication of CH449799A publication Critical patent/CH449799A/de
Priority to US708128A priority patent/US3576501A/en
Priority to GB10421/68A priority patent/GB1147850A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Led Devices (AREA)
CH335367A 1967-03-07 1967-03-07 Diodenlaser CH449799A (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CH335367A CH449799A (de) 1967-03-07 1967-03-07 Diodenlaser
DE19671589967 DE1589967C (de) 1967-03-07 1967-09-27 Diodenlaser
FR126163A FR1542020A (fr) 1967-03-07 1967-10-27 Diode laser
NL6715182A NL6715182A (de) 1967-03-07 1967-11-09
US708128A US3576501A (en) 1967-03-07 1968-02-26 Diode laser having a roughened n-zone just below the junction
GB10421/68A GB1147850A (en) 1967-03-07 1968-03-04 Improvements in or relating to diode lasers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH335367A CH449799A (de) 1967-03-07 1967-03-07 Diodenlaser

Publications (1)

Publication Number Publication Date
CH449799A true CH449799A (de) 1968-01-15

Family

ID=4254133

Family Applications (1)

Application Number Title Priority Date Filing Date
CH335367A CH449799A (de) 1967-03-07 1967-03-07 Diodenlaser

Country Status (4)

Country Link
US (1) US3576501A (de)
CH (1) CH449799A (de)
GB (1) GB1147850A (de)
NL (1) NL6715182A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740661A (en) * 1969-06-06 1973-06-19 Bell Telephone Labor Inc Minor lobe suppression in semiconductor injection lasers
US3946334A (en) * 1973-11-14 1976-03-23 Nippon Electric Company, Limited Injection semiconductor laser device
US3978426A (en) * 1975-03-11 1976-08-31 Bell Telephone Laboratories, Incorporated Heterostructure devices including tapered optical couplers
DE102012106943B4 (de) * 2012-07-30 2019-06-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterlaserdiode und Halbleiterlaserdiode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3431512A (en) * 1964-06-29 1969-03-04 Union Carbide Corp Junction laser with controlled output

Also Published As

Publication number Publication date
GB1147850A (en) 1969-04-10
DE1589967B2 (de) 1972-06-22
NL6715182A (de) 1968-09-09
DE1589967A1 (de) 1970-05-14
US3576501A (en) 1971-04-27

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