CN111593329A - 包括处理步骤的循环沉积方法及用于其的装置 - Google Patents
包括处理步骤的循环沉积方法及用于其的装置 Download PDFInfo
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- CN111593329A CN111593329A CN202010088106.7A CN202010088106A CN111593329A CN 111593329 A CN111593329 A CN 111593329A CN 202010088106 A CN202010088106 A CN 202010088106A CN 111593329 A CN111593329 A CN 111593329A
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Abstract
公开了一种用于在基板的表面上沉积材料的方法和装置。该方法可包括处理步骤以抑制基板的表面上材料沉积的速率。该方法可产生更高质量的沉积材料。另外或替代地,该方法可用于填充基板表面内的凹部,其中接缝形成减少或无接缝形成。
Description
技术领域
本公开总体上涉及用于制造电子器件的方法和装置。更具体地讲,本公开涉及用于在电子器件的形成期间沉积膜的方法和装置。
背景技术
在电子器件如集成电路的制造期间,常常向基板的表面上沉积材料的膜或层。这样的膜可被图案化和蚀刻以形成所需的结构。另外或替代地,可在基板的表面上沉积膜以填充凹部,例如通孔、沟槽或翅片之间的空间。
在填充凹部的情况下,典型的膜沉积工艺可能存在缺点,包括在凹部中形成空隙。在凹部被沉积材料完全填充之前,当沉积材料在凹部的顶部附近形成收缩时可能会形成空隙。这样的空隙可能损害集成电路(IC)的器件的器件隔离以及IC的总体结构完整性。遗憾的是,防止在凹部填充期间形成空隙可能对凹部施加尺寸约束,这可能会限制IC的器件封装密度。
可通过减小凹部深度和/或使凹部侧壁逐渐变细使得凹部的开口在顶部处比在凹部的底部处宽来减轻空隙的形成。减小凹部深度的妥协可能是降低器件隔离的有效性,而侧壁逐渐变细的凹部较大的顶部开口可能会占用额外的IC空间。当试图减小器件尺寸时,这些问题可能变得越来越成问题。此外,通常可能需要形成相对高质量的膜——例如,在例如氢氟酸和/或磷酸中具有相对高蚀刻速率的膜。因此,需要用于形成高质量膜和/或用于填充凹部的改进方法和装置。
发明内容
本公开的各种实施方案涉及向基板的表面上沉积材料的方法及用于沉积材料的装置。虽然下文将更详细地讨论本公开的各种实施方案解决现有方法的缺点的方式,但总体上,本公开的示例性实施方案提供了用于沉积高质量材料的改进方法和装置和/或用沉积材料无缝地填充高纵横比凹部的方法。如下文更详细地阐述的,示例性方法可包括处理基板的表面以抑制或减慢沉积材料的生长速率的步骤。生长速率的抑制据认为会改善沉积材料的质量和/或促进凹部用沉积材料的无缝填充。另外,可沉积高质量材料而无需对沉积材料进行后处理退火,否则常要进行退火以改善沉积材料的质量。
根据本公开的至少一个实施方案,在基板表面的表面上沉积材料的方法包括步骤:在反应腔室中提供基板;由第一反应物形成第一活性物质以改性基板的表面;和进行一个或多个沉积循环以沉积所述材料。每个沉积循环可包括向基板引入第二反应物,其中所述第二反应物与表面反应形成化学吸附材料;和由第三反应物形成第二活性物质,所述第二活性物质与化学吸附材料反应形成沉积材料。形成第一活性物质的步骤的数量与沉积循环的数量的比率可在约1∶1至约1∶10的范围内。根据各个方面,第一反应物的流动在形成第一活性物质的步骤和进行一个或多个沉积循环的步骤期间是连续的。根据进一步的方面,可在形成第一活性物质和进行一个或多个沉积循环的步骤期间连续地提供惰性气体。
根据进一步的实施方案,提供了一种半导体加工装置以提供例如改进的或至少替代的沉积方法,如本文所述的方法。根据本公开的至少一个实施方案,半导体加工装置包括一个或多个用于容纳基板的反应腔室;第一反应物的第一源,其经由第一阀门与反应腔室之一气体连通;第二反应物的第二源,其经由第二阀门与反应腔室之一气体连通;第三反应物的第三源,其经由第三阀门与反应腔室之一气体连通;和可操作地连接到第一、第二和第三气体阀门并配置和编程为控制以下的控制器:由第一反应物形成第一活性物质以改性基板的表面;和进行一个或多个沉积循环以沉积材料。每个沉积循环可包括:向基板引入第二反应物,其中所述第二反应物与表面反应形成化学吸附材料;和由第三反应物形成第二活性物质,所述第二活性物质与化学吸附材料反应形成沉积材料。形成第一活性物质的步骤的数量与沉积循环的数量的比率在约1∶1至约1∶10的范围内。控制器可进一步配置为在形成第一活性物质和进行一个或多个沉积循环的步骤期间连续地提供惰性气体。另外或替代地,控制器可配置为在形成第一活性物质的步骤和进行一个或多个沉积循环的步骤期间连续地提供第一反应物的流动。控制器可另外或替代地配置为从处理吹扫步骤并贯穿进行一个或多个沉积循环的步骤提供第三反应物的流动(例如,连续地)。此外,可使用如本文所述的装置来进行一种或多种如本文所述的方法。
根据本公开的还进一步的示例性实施方案,可使用如本文所述的方法和/或装置形成半导体结构。
出于概述本发明和优于现有技术而实现的优势的目的,上文中描述了本发明的某些目的和优点。当然,应当理解,未必所有这类目的或优点都可以根据本发明的任何特定实施例来实现。因此,例如,所属领域的技术人员将认识到,可以按实现或优化如本文中所教示或建议的一个优点或一组优点但不一定实现如本文中可能教示或建议的其它目的或优点的方式来实施或进行本发明。通过以下参考附图对某些实施方案的详细描述,这些和其他实施方案对于本领域技术人员将变得显而易见,本发明不限于所公开的任何特定实施方案。
附图说明
当结合以下说明性图式考虑时,可通过参考详细描述和权利要求书得到对本公开的例示性实施例的更完整理解。
图1示意了根据本公开的至少一个实施方案的沉积材料的方法。
图2示意了根据本公开的至少一个实施方案的工艺序列。
图3示意了根据本公开的至少一个实施方案的工艺序列。
图4示意了根据本公开的至少一个实施方案的沉积材料的湿法蚀刻速率比。
图5示意了根据本公开的至少一个实施方案填充了沉积材料的凹部的扫描电子显微镜图像。
图6A示意了根据本公开的至少一个实施方案适于填充凹部的PEALD(等离子体增强原子层沉积)装置的示意图。
图6B示意了可用于根据本公开的至少一个实施方案中的使用流通系统(flow-pass system,FPS)的前体供给系统的示意图。
图7示意了用各种第一反应物等离子体活化时间沉积的材料的透射电子显微镜图像。
应了解,图中的元件仅为了简单和清晰而说明,并且不一定按比例绘制。举例来说,图中的一些元件的尺寸可能相对于其他元件夸大,以有助于改进对本公开所说明实施例的理解。
具体实施方式
尽管下文公开了某些实施例和实例,但所属领域的技术人员将理解,本发明延伸超出了本发明具体公开的实施例和/或用途以及显而易见的修改和其等效物。因此,希望本发明所公开的范围不应受下文所描述特定公开实施例的限制。
可使用本公开的示例性实施方案来在基板的表面上沉积材料。例如,可使用示例性的方法和装置来填充基板表面上的凹部,如沟槽、通孔和/或翅片之间的区域。根据本公开的实施例,使用处理步骤来抑制随后沉积的膜的生长速率——例如,通过从基板的表面去除氢和/或羟基基团。据认为,生长速率的抑制将有助于填充凹部,同时减轻或消除凹部内空隙和/或接缝的形成。另外,与使用常规技术沉积的膜相比,生长速率的抑制可有助于沉积较高质量的膜。此外,可使用所述方法和装置来沉积高质量材料而不需要进一步的材料后处理如退火。尽管可将本文描述的方法配置为降低沉积生长速率,但可如下文更详细地讨论的那样配置各种工艺步骤使得沉积膜的总工艺时间保持相对较低。
如本文所用,术语“基板”可指可用来形成器件、电路或膜或者可在其上形成器件、电路或膜的任何一种或多种底层材料。基板可包括块体材料,如硅(例如,单晶硅)并可包括覆盖在块体材料上面的一个或多个层。另外,基板可包括各种拓扑结构,如形成在基板的层的至少一部分内或基板的层的至少一部分上的凹部、线条等等。
作为实例,基板可包含这样的材料,其包含氢和/或羟基基团封端位点。例如,基板可以是或包含具有羟基封端基团和/或氢封端基团的硅和/或氧化硅。
如本文所用,术语“原子层沉积(ALD)”可指在工艺腔室中进行沉积循环、通常多个连续沉积循环的气相沉积工艺。通常,在每个循环期间,使前体化学吸附到沉积表面(例如,基板表面,其可包含来自先前的ALD循环的先前沉积的材料或其他材料),从而形成不易于与额外的前体反应的约单层或亚单层材料(即,自限性反应)。其后,在一些情况下,可随后向工艺腔室中引入反应物(例如,另一前体或反应气体)以用于使化学吸附前体转化为沉积表面上的期望材料。反应物能够与前体进一步反应。此外,还可在每个循环期间利用吹扫步骤以在化学吸附前体的转化之后从工艺腔室去除过量的前体和/或从工艺腔室去除过量的反应物和/或反应副产物。此外,当使用前体/反应性气体和吹扫气体(例如,惰性载气)的交替脉冲进行时,如本文所用,术语“原子层沉积”还意在包括由相关术语如化学气相原子层沉积、原子层外延(ALE)、分子束外延(MBE)、气体源MBE或有机金属MBE和化学束外延所指定的工艺。术语反应物和前体可互换使用。
现在转到附图,图1示意了根据本公开的至少一个实施方案在基板的表面上沉积材料的方法100。可使用在基板的表面上沉积材料的方法100来例如填充在结构的制造期间产生的一个或多个凹部,这些凹部有时被称为间隙或特征——例如,在电子器件的制造期间形成的结构。凹部顶部处的开口可例如小于40或甚至20nm宽;凹部的深度可大于40、100、200或甚至400nm。凹部的纵横比可在例如约5∶1至约30∶1的范围内。
在基板的表面上沉积材料的方法100可以是循环沉积工艺,如ALD工艺。在所示意的实施例中,在基板的表面上沉积材料的方法100包括步骤:在反应腔室中提供基板(步骤102),形成第一反应性物质(步骤104),和进行一个或多个沉积循环(步骤106)。如图所示,在结束在基板的表面上沉积材料的方法100之前,可将步骤106重复多次,如循环108所示。另外或替代地,可重复步骤104和106(步骤106任选地另外重复),如循环110所示。步骤104(在本文中也称为处理步骤)和步骤106(在本文中也称为沉积循环)的比率可例如为1∶1、1∶3、1∶5、1∶10以及这些值之间的任何范围。
在反应腔室中提供基板步骤102包括向反应腔室提供基板以根据方法100进行加工。举例来说,基板可包括硅层或包含硅的层并具有形成于其中的至少一个凹部。另外或替代地,基板可包括例如氧化硅或光刻胶的层。
在步骤102期间,可使用例如基板加热器和/或辐射加热器或其他加热器使基板达到期望的温度以便后续加工。步骤102-106期间的温度可低于450℃或低于300℃,或在约20℃至约450℃或约50℃至约300℃的范围内。在步骤102-106期间反应腔室内的压力可为约1托至约5托或约2托至约4托。
在步骤104期间,形成来自第一反应物的第一活性物质。第一反应性物质可用来改性基板的表面——例如,减慢步骤106期间沉积的材料的生长速率。例如,第一活性物质可用来钝化基板表面上否则活性/反应性的位点。因此,与未经处理的表面(例如,表面的另一部分或另一基板表面)上每个循环沉积材料的生长相比,所述基板的表面(例如,基板内形成的凹部的表面)上每个循环沉积材料的生长可减少。
活性物质可使用原位或远程等离子体形成。步骤104期间等离子体功率可在约400W至约1500W或约500W至约1000W的范围内。可使用脉冲时间形成等离子体和/或在步骤104期间等离子体的接通时间可在约3秒至约20(例如,10)秒或约1秒至约10(例如,5)秒或约8秒至约12秒或约3秒至约7秒的范围内。
根据本公开的实例,第一反应物可包括氮气或包含氮的气体。根据进一步的实例,第一反应物可包括氮气、NH3、NO、N2O、NO2和N2H4或其衍生物中的一种或多种。
步骤104可包括第一反应物吹扫子步骤。在第一反应物吹扫子步骤期间,过量的一种或多种反应物和反应副产物(如果有的话)可例如通过吹扫气体脉冲和/或泵送系统生成的真空从反应空间/基板表面去除。吹扫气体可以是任何惰性气体,如但不限于氩气(Ar)、氮气(N2)和/或氦气(He)。如果吹扫(即,吹扫气体脉冲)或其它反应物去除步骤介于两个阶段之间,那么一个阶段一般被视为紧接着另一阶段。吹扫子步骤期间吹扫气体的流率可在约500sccm至约5000sccm或约1000sccm至约4000sccm的范围内。在吹扫子步骤期间气体流动的时间可相对较短以促进材料的相对快速沉积。举例来说,在此吹扫子步骤期间气体流动的时间可大于0并小于1秒或在约0.1秒至约0.9秒或约0.3秒至约0.5秒的范围内。
步骤106包括进行沉积循环,如ALD沉积循环。每个沉积循环可包括向基板引入第二反应物,其中所述第二反应物与表面反应以形成化学吸附材料,和由第三反应物形成第二活性物质,所述第二活性物质与化学吸附材料反应形成沉积材料。
步骤106期间反应腔室内的压力可与步骤102和104中任一个期间反应腔室内的压力相同或相似。举例来说,步骤106期间反应腔室内的压力可为约1托至约5托或约2托至约4托。
可向反应腔室引入第二反应物以形成化学吸附材料。第二反应物可包括例如硅。举例来说,第二反应物可包括硅烷胺(氨基硅烷)、硅氧烷胺和硅氮烷胺中的一种或多种。或者,第二反应物可包括卤化物,如氯化物或碘化物(例如,氯硅烷或碘硅烷)。作为特定实例,第二反应物可以是或可包括硅烷二胺,如N,N,N',N'-四乙基硅烷二胺。
向反应腔室引入第二反应物的脉冲/流动时间可在例如约大于0至小于1秒或约0.1至0.5(例如,0.2)秒的范围内。
第三反应物可以是或可包括氧。举例来说,第三反应物可以是或可包括水、过氧化氢和臭氧中的一种或多种。向反应腔室引入第三反应物的脉冲/流动时间可在例如约大于0至小于1秒或约0.1至0.5(例如,0.3)秒的范围内。
在步骤106期间,第二活性物质由第三反应物形成。第二活性物质可与化学吸附材料(例如,使用第二反应物形成的)反应以形成沉积材料。第二活性物质可例如与化学吸附材料反应并从化学吸附材料去除配体,从而形成沉积材料。
第二活性物质可使用直接等离子体或远程等离子体单元形成。用于产生等离子体的功率可例如在约400W和约1500W之间。
类似于步骤104,步骤106可包括一个或多个吹扫子步骤以吹扫第二和/或第三反应物。在第二和/或第三反应物吹扫子步骤期间,如上所述,可从基板表面去除过量的一种或多种反应物和反应副产物(如果有的话)。在步骤106下的吹扫子步骤可能特别希望的是减轻否则可能发生的任何不希望有的CVD反应。第二和/或第三反应物吹扫子步骤期间吹扫气体的流率可在约500sccm至约5000sccm或约1000sccm至约4000sccm的范围内。第二和/或第三反应物吹扫子步骤期间气体流动的时间可在引入第二反应物后大于0秒至小于1秒或约0.1秒至约0.5(例如,0.3)秒并可在引入第三反应物后大于0秒至小于1秒或约0.1秒至约0.5(例如,0.2)秒的范围内。步骤106可包括额外的吹扫——例如,以上面指出的气体流率持续约1至约5(例如,约2)秒的时段。
图2示意了根据本公开的至少一个实施方案的工艺序列200。工艺序列200可适合于与在基板的表面上沉积材料的方法100一起使用。图2示意了用于气体流动和用于等离子体功率或用于活性物质提供的开/关序列。
如图所示,沉积序列202可包括处理步骤204、吹扫步骤206、沉积循环208和最终吹扫步骤210。处理步骤204可重复m次,其中m在约1至约5的范围内,沉积循环208可重复n次,其中n在约1至约25的范围内。m∶n的比率可在例如1∶1、1∶3、1∶5、1∶10的范围内或这些值之间的任何位置处。此外,沉积序列202可重复多次(循环226)直至沉积所需厚度的材料。对于循环226的每次迭代,m∶n的比率可改变或保持相同。
步骤204可与步骤104相同或相似并可在步骤102之后。在所示意的实例中,步骤204包括任选的初始吹扫步骤212、第一活性物质的引入或形成214及第一反应物吹扫步骤216。如图所示,吹扫气体的供给在整个工艺序列200中可以是连续的。可(例如仅)在步骤216期间提供用于形成第一活性物质的气体,并可(例如仅)在步骤214期间激活用于形成第一活性物质的等离子体功率。或者,可在步骤212-224和210中的一个或多个期间供给第一反应物,如结合图3更详细地描述的。类似地,可在步骤214-224和210中的一个或多个期间供给第三反应物,并仅在步骤222期间活化。步骤216可与上述第一反应物吹扫步骤相同或相似。
在步骤206期间,可使用另一第一反应物吹扫步骤来促进从步骤204剩余的任何不需要的材料的去除。步骤206期间吹扫气体的流率可与上述第一吹扫气体流率相同。步骤206的时间可在约1至约10秒或约4至约6秒的范围内。
步骤208可与上述步骤106相同或相似。如图所示,每个沉积循环可包括引入第二反应物(步骤218)、第二反应物吹扫(步骤220)、由第三反应物形成第二活性物质(步骤222)和第三反应物吹扫(步骤224)。步骤218-224可与上述步骤106相同或相似。
工艺序列200可包括最终吹扫步骤210。步骤210期间吹扫气体的流率可与上述第三反应物吹扫子步骤相同或相似。步骤210的时间可在约0.1至约10秒或约1至约5秒的范围内。
下表1示意了适合于方法100和/或工艺序列200的示例性温度、功率、频率、压力、流率和反应器条件。下文提供的范围示意了本公开的实例。除非另有指出,否则所述范围并不意在限制本公开的范围。
表1
图4示意了例如根据方法100和/或工艺序列200形成的氧化硅在LAL 15蚀刻剂中持续30秒的时段的湿法蚀刻速率比。对于根据工艺序列200形成的膜,在基板的中心和边缘处测量去除速率。如图所示,处理对沉积比越高,则沉积膜的湿法蚀刻速率越低。这表明可使用约1∶1和约1∶10之间的处理对沉积比形成较高质量的膜。
图5示意了例如根据方法100和/或工艺序列200沉积到纵横比为20∶1的凹部中的材料。图5显示,在使用如本文所述的处理步骤显著减小接缝的同时,用约1∶10的沉积:处理循环比可形成相对较小的接缝,但在1∶5、1∶3或1∶1的比率下未观察到接缝。
图3示意了根据本公开的至少一个实施方案的另一个工艺序列300。方法100可使用工艺序列300来在基板的表面上沉积材料。工艺序列300与工艺序列200相似,不同在于工艺序列300包括较少的吹扫步骤,并包括第一反应物的连续流动。认为第一反应物的连续流动有助于更稳定的工艺环境并改善沉积到基板表面上的材料的均匀性(例如,组成和/或厚度)。
与工艺序列200相似,工艺序列300包括沉积序列302,所述沉积序列包括处理步骤304和沉积循环/步骤306。与工艺序列200不同,工艺序列300不包括吹扫步骤206或最终吹扫210。这允许工艺序列300相对较短,继而允许高质量沉积材料的相对快速沉积和高的生产量,这可用来例如填充基板表面内的凹部。处理步骤304可重复m次,其中m在约1至约5的范围内,沉积循环208可重复n次,其中n在约1至约2的范围内。m∶n的比率可在例如1∶1、1∶3、1∶5、1∶10的范围内或这些值之间的任何位置处。此外,沉积序列302可重复多次(循环308)直至沉积所需厚度的材料。对于循环308的每次迭代,m∶n的比率可改变或保持相同。
如图3中所示,工艺序列300可以由第一反应物形成第一活性物质的步骤310开始,其中向反应腔室连续地提供第一反应物和吹扫气体。在步骤310期间,第一反应物可通过RF功率活化以形成第一活性物质,如上文结合图1所述。第一反应物的等离子体活化时间可在大于3秒至约10(例如,5)秒或约4秒至约8秒的范围内。等离子体点火时间也被认为是在凹部中无缝填充沉积材料的重要因素,并可取决于各种因素,包括特征的纵横比和如上所定义的m∶n比率。例如,如图7中所示,对于1∶3的m∶n比率和对于纵横比为20∶1的特征,每个处理步骤中小于3秒的等离子体点火时间可能在沉积材料中留下接缝。在示意性实例中,每个处理步骤中五秒或更长的等离子体点火时间不导致沉积材料中接缝的形成。因此,等离子体点火时间可至少部分地基于基板表面上的特征的纵横比。在步骤312期间,允许吹扫气体和第一反应物流过反应腔室。下面在表2中提供了吹扫气体和第一反应物的示例性流率。
在沉积循环306期间,可向反应腔室引入第二反应物。第二反应物的流率和第二反应物的脉冲时间可与上文结合图1和2描述的步骤106和218期间第二反应物的流率相同或相似。然后可在步骤316期间通过让第一反应物、吹扫气体和任选地第三反应物继续流动来吹扫第二反应物,如图所示。当让第三反应物流动额外的步骤时(例如,除了步骤318外,还包括步骤312-316和320),可在步骤318中将第三反应物活化一段时间,使得(例如,仅)在步骤318期间形成由第三反应物形成的第二活性物质,所述第二活性物质与化学吸附材料反应形成沉积材料。或者,也可仅在步骤318期间使第三反应物流动。下面在表2中提供了示例性的功率水平和第三反应物的活化时间。
下表2示意了适合于方法100、工艺序列200和/或工艺序列300的示例性温度、功率、频率、压力、流率和反应器条件。下文提供的范围示意了本公开的实例。除非另有指出,否则所述范围并不意在限制本公开的范围。
表2
图6A和图6B示意了根据本公开的示例性实施方案的半导体加工装置30。半导体加工装置30包括:一个或多个用于容纳基板的反应腔室3,所述基板可包括表面,所述表面可包括形成于其中的凹部;第一反应物的第一源21,其经由第一阀门31与反应腔室之一气体连通;第二反应物的第二源22,其经由第二阀门32与反应腔室之一气体连通;第三反应物的第三源25,其经由第三阀门33与反应腔室之一气体连通;任选的第四源26(例如,用于吹扫气体或载气),其经由第四阀门34与反应腔室之一气体连通;和可操作地连接到第一、第二、第三和任选地第四气体阀门并配置和编程为控制以下的控制器27:由第一反应物形成第一活性物质以改性基板的表面和进行一个或多个沉积循环以沉积材料。每个沉积循环可包括向基板引入第二反应物,其中所述第二反应物与表面反应形成化学吸附材料;和由第三反应物形成第二活性物质,所述第二活性物质与化学吸附材料反应形成沉积材料。形成第一活性物质的步骤的数量与沉积循环的数量的比率在约1∶1至约1∶10的范围内。第四气体可与第一、第二和/或第三反应物中的任何一种一起引入,和/或可用作如本文所述的吹扫气体。尽管未示出,但半导体加工装置30可包括另外的源和另外的部件,如通常用于半导体加工装置上的那些。
任选地,半导体加工装置30设置有加热器以通过升高基板、第一、第二和第三反应物中的一个或多个的温度来激活反应。专门设计以进行循环或ALD工艺的示例性单晶片反应器可自ASM InternationalNV(荷兰阿尔梅勒市)商购获得。专门设计以进行ALD工艺的示例性分批ALD反应器也可自ASM International NV商购获得。
半导体加工装置30可设置有与控制器可操作地连接的射频源,该控制器构造和布置为产生第一、第二和/或第三反应物中的至少一个或其组合的等离子体。等离子体增强原子层沉积(PEALD)可在可从荷兰阿尔梅勒市的A SM International NV获得的反应器中进行,该装置包含等离子体源以活化一种或多种反应物。
可理想地与控制器结合使用半导体加工装置30来进行具有等离子体的工艺步骤,所述控制器编程为进行本文所述的序列,这些序列可用于本公开的至少一些实施方案中。在图6A中示意的装置中,通过提供一对并联的并在反应腔室3的内部11(反应区)中彼此面对面的导电平板电极4、2,从电源20向一侧施加RF功率(例如,13.56MHz或27MHz),并将另一侧12电接地,在电极之间激发等离子体。
可在下平台2(下电极)中提供温度调节器,并可将放置在其上的基板1的温度保持在相对恒定的温度下。上电极4也可用作喷淋板,并可分别通过气体管线41-44和通过喷淋板4向反应腔室3中引入反应物气体(和任选地惰性气体,如稀有气体)和/或吹扫气体。
另外,在反应腔室3中,提供具有排气管线7的环形管13,通过所述排气管线排出反应腔室3的内部11中的气体。另外,反应腔室3的下部分5——例如设置在反应腔室3的上部分45下方——提供有密封气体管线24以经由反应腔室3的下部分5的下部空间16向反应腔室3的内部11中引入密封气体,其中提供有用于将上电极4和下平台2之间的反应区与下部空间16分开的隔板14(此图中略去了通过其向反应腔室3的下部分中或从所述反应腔室的下部分传送晶片的闸阀)。反应腔室5的下部分还提供有排气管线6。在一些实施方案中,在同一反应空间中进行多元素膜的沉积和表面处理(例如,步骤104-108),使得所有步骤都可连续地进行而不将基板暴露于空气或其他含氧气氛中。在一些实施方案中,可使用远程等离子体单元来激发气体——例如,来自源21、22、25和/或26中的一者或多者。
在一些实施方案中,在图6A中所描绘的装置中,图6B中示意了切换非活性气体的流量与前体或反应物气体的流量的系统;该系统可用来引入脉冲形式的前体或反应物气体而基本上不使反应腔室的压力波动。图6B示意了根据本公开的一个实施方案的使用流通系统(FPS)的前体供给系统(黑色阀门指示该阀门是关闭的)。如图6B中(a)中所示,当向反应腔室进给前体时(未示出),第一载气如Ar(或He)流经具有阀门b和c的气体管线,并然后进入瓶(储存器)20。载气从瓶20流出,同时携带量对应于瓶20内部的蒸气压的前体气体,流过具有阀门f和e的气体管线,并然后与前体一起进给到反应腔室。在这种情况下,阀门a和d是关闭的。当向反应腔室仅进给载气(例如,稀有气体)时,如图6B中(b)中所示,载气流经具有阀门的气体管线,同时绕过瓶20。在这种情况下,阀门b、c、d、e和f是关闭的。反应物可借助于载气提供。
用于沉积的等离子体可原位生成,例如,使用例如在整个沉积循环中连续地流动的一种或多种气体。在其他实施方案中,可另外或替代地远程生成等离子体并向反应腔室提供活性物质。
在一些实施方案中,可使用多室反应器(不止两个用于加工彼此靠近设置的晶片的部分或隔室),其中反应物气体和惰性气体如稀有气体可通过共享管线供给,而前体气体可通过未共享管线供给。或者前体气体可通过共享管线供给。
装置可包括一个或多个控制器,如控制器27,其被编程或以其他方式配置成使得本文所述的沉积工艺得以进行。所述一个或多个控制器可与各种电源、加热系统、泵、机器人装置和反应器的气体流量控制器或阀门连通。
应该理解,本文描述的配置和/或方法本质上是示例性的,并且这些具体实施例或实例不被认为是限制性的,因为许多变化是可能的。本文描述的具体例程或方法可以表示各种处理策略中的一个或多个。因此,所示的各种动作可以以所示的顺序执行、以其它顺序执行或者在一些情况下可以省略。
本公开的主题包含本文公开的各种过程、系统和配置以及其它特征、功能、动作和/或特性及其任何和所有等效物的所有新颖和非显而易见的组合和子组合。
Claims (20)
1.一种在基板表面的表面上沉积材料的方法,所述方法包括步骤:
在反应腔室中提供基板;
由第一反应物形成第一活性物质以改性所述基板的表面;和
进行一个或多个沉积循环以沉积所述材料,其中每个沉积循环包括:
向所述基板引入第二反应物,其中所述第二反应物与所述表面反应形成化学吸附材料;和
由第三反应物形成第二活性物质,所述第二活性物质与所述化学吸附材料反应形成沉积材料,其中形成第一活性物质的步骤的数量与沉积循环的数量的比率在约1∶1至约1∶10的范围内。
2.根据权利要求1所述的方法,其中形成第一活性物质的步骤的数量与沉积循环的数量的比率在约1∶1至约1∶5的范围内。
3.根据权利要求1所述的方法,其中所述表面包含硅。
4.根据权利要求1所述的方法,其中所述第一活性物质从所述表面去除氢和羟基基团中的一者或多者。
5.根据权利要求1所述的方法,其中所述第一反应物的流动在形成第一活性物质的步骤和进行一个或多个沉积循环的步骤期间是连续的。
6.根据权利要求5所述的方法,其中所述形成第一活性物质的步骤不包括吹扫步骤。
7.根据权利要求1所述的方法,所述方法还包括向所述反应腔室提供惰性气体的步骤。
8.根据权利要求7所述的方法,其中在形成第一活性物质和进行一个或多个沉积循环的步骤期间连续地提供所述惰性气体。
9.根据权利要求1所述的方法,其中所述第一反应物包含氮。
10.根据权利要求9所述的方法,其中所述第一反应物包含氮、NH3、NO、N2O、NO2中的一种或多种。
11.根据权利要求1所述的方法,其中所述第二反应物包含硅。
12.根据权利要求11所述的方法,其中所述第二反应物包含硅烷、氨基硅烷、硅氧烷胺、硅氮烷胺、碘硅烷和氯化物中的一种或多种。
13.根据权利要求1所述的方法,其中所述第三反应物包含氧。
14.根据权利要求13所述的方法,其中所述第三反应物包含水、过氧化氢和臭氧中的一种或多种。
15.根据权利要求1所述的方法,其中所述反应腔室内基板支架的温度小于450℃。
16.根据权利要求1所述的方法,其中施加到电极以形成所述第二活性物质的功率为约400W至约1500W。
17.根据权利要求1所述的方法,其中重复形成第一活性物质和进行一个或多个沉积循环的步骤直至所述表面上的凹部被所述沉积材料填充。
18.根据权利要求17所述的方法,其中所述凹部内的所述沉积材料是无缝的。
19.一种在基板表面上沉积材料的方法,所述方法包括步骤:
在反应腔室中提供基板;
由第一反应物形成第一活性物质以改性所述基板的表面;和
进行一个或多个沉积循环以沉积所述材料,其中每个沉积循环包括:
向所述基板引入第二反应物,其中所述第二反应物与所述表面反应形成化学吸附材料;和
由第三反应物形成第二活性物质,所述第二活性物质与所述化学吸附材料反应形成沉积材料,其中形成第一活性物质的步骤的数量与沉积循环的数量的比率在约1∶1至约1∶10的范围内,其中在形成第一活性物质和进行一个或多个沉积循环的步骤期间连续地向所述反应腔室提供惰性气体,并且
其中所述第一反应物的流动在形成第一活性物质和进行一个或多个沉积循环的步骤期间是连续的。
20.一种半导体加工装置,其包括:
一个或多个用于容纳包含表面的基板的反应腔室;
第一反应物的第一源,其经由第一阀门与所述反应腔室之一气体连通;
第二反应物的第二源,其经由第二阀门与所述反应腔室之一气体连通;
第三反应物的第三源,其经由第三阀门与所述反应腔室之一气体连通;和
控制器,其可操作地连接到第一、第二和第三气体阀门并且配置和编程为控制:
由第一反应物形成第一活性物质以改性所述基板的表面;和
进行一个或多个沉积循环以沉积材料,其中每个沉积循环包括:
向所述基板引入第二反应物,其中所述第二反应物与所述表面反应形成化学吸附材料;和
由第三反应物形成第二活性物质,所述第二活性物质与所述化学吸附材料反应形成沉积材料,
其中形成第一活性物质的步骤的数量与沉积循环的数量的比率在约1∶1至约1∶10的范围内。
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