ZA200506095B - A thin film semiconductor device and method of manufacturing a thin film semiconductor device - Google Patents

A thin film semiconductor device and method of manufacturing a thin film semiconductor device Download PDF

Info

Publication number
ZA200506095B
ZA200506095B ZA200506095A ZA200506095A ZA200506095B ZA 200506095 B ZA200506095 B ZA 200506095B ZA 200506095 A ZA200506095 A ZA 200506095A ZA 200506095 A ZA200506095 A ZA 200506095A ZA 200506095 B ZA200506095 B ZA 200506095B
Authority
ZA
South Africa
Prior art keywords
semiconductor device
layer
active layer
printing
substrate
Prior art date
Application number
ZA200506095A
Other languages
English (en)
Inventor
Harting Margit
Britton David Thomas
Original Assignee
Univ Cape Town
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Cape Town filed Critical Univ Cape Town
Priority to ZA200506095A priority Critical patent/ZA200506095B/en
Publication of ZA200506095B publication Critical patent/ZA200506095B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H01L29/8126—Thin film MESFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/778—Nanostructure within specified host or matrix material, e.g. nanocomposite films
    • Y10S977/785—Electrically insulating host material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Thin Film Transistor (AREA)
  • Photovoltaic Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
ZA200506095A 2003-01-30 2004-01-30 A thin film semiconductor device and method of manufacturing a thin film semiconductor device ZA200506095B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
ZA200506095A ZA200506095B (en) 2003-01-30 2004-01-30 A thin film semiconductor device and method of manufacturing a thin film semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ZA200300849 2003-01-30
ZA200506095A ZA200506095B (en) 2003-01-30 2004-01-30 A thin film semiconductor device and method of manufacturing a thin film semiconductor device

Publications (1)

Publication Number Publication Date
ZA200506095B true ZA200506095B (en) 2006-10-25

Family

ID=32825831

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA200506095A ZA200506095B (en) 2003-01-30 2004-01-30 A thin film semiconductor device and method of manufacturing a thin film semiconductor device

Country Status (6)

Country Link
US (1) US8026565B2 (de)
EP (1) EP1593163B1 (de)
JP (2) JP2006516819A (de)
ES (1) ES2548627T3 (de)
WO (1) WO2004068536A2 (de)
ZA (1) ZA200506095B (de)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006071806A2 (en) 2004-12-27 2006-07-06 Quantum Paper, Inc. Addressable and printable emissive display
EP1899261A2 (de) 2005-06-30 2008-03-19 University of Cape Town Halbleiter-nanopartikel mit oberflächenmodifikation
GB2432714A (en) * 2005-10-06 2007-05-30 Seiko Epson Corp Thin film transistor and method for fabricating an electronic device
WO2007117698A2 (en) * 2006-04-07 2007-10-18 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing material
WO2007124445A2 (en) 2006-04-21 2007-11-01 Innovalight, Inc. Organosilane-stabilized nanoparticles of si or ge in an oxide matrix
US20080063855A1 (en) * 2006-09-07 2008-03-13 Maxim Kelman Semiconductor thin films formed from group iv nanoparticles
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
US20080078441A1 (en) * 2006-09-28 2008-04-03 Dmitry Poplavskyy Semiconductor devices and methods from group iv nanoparticle materials
EP2089897A2 (de) 2006-12-07 2009-08-19 Innovalight, Inc. Verfahren zur erzeugung einer verdichteten gruppe-iv-halbleiter-nanopartikeldünnschicht
US7718707B2 (en) 2006-12-21 2010-05-18 Innovalight, Inc. Method for preparing nanoparticle thin films
WO2008102258A2 (en) * 2007-02-20 2008-08-28 Innovalight, Inc. Substrate preparation for enhanced thin film fabrication from group iv semiconductor nanoparticles
US7727901B2 (en) 2007-05-03 2010-06-01 Innovalight, Inc. Preparation of group IV semiconductor nanoparticle materials and dispersions thereof
US8852467B2 (en) 2007-05-31 2014-10-07 Nthdegree Technologies Worldwide Inc Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US8809126B2 (en) 2007-05-31 2014-08-19 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9419179B2 (en) 2007-05-31 2016-08-16 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8674593B2 (en) 2007-05-31 2014-03-18 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8877101B2 (en) 2007-05-31 2014-11-04 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, power generating or other electronic apparatus
US9425357B2 (en) 2007-05-31 2016-08-23 Nthdegree Technologies Worldwide Inc. Diode for a printable composition
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
US8395568B2 (en) 2007-05-31 2013-03-12 Nthdegree Technologies Worldwide Inc Light emitting, photovoltaic or other electronic apparatus and system
US9534772B2 (en) 2007-05-31 2017-01-03 Nthdegree Technologies Worldwide Inc Apparatus with light emitting diodes
US8846457B2 (en) 2007-05-31 2014-09-30 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US9343593B2 (en) 2007-05-31 2016-05-17 Nthdegree Technologies Worldwide Inc Printable composition of a liquid or gel suspension of diodes
US8133768B2 (en) 2007-05-31 2012-03-13 Nthdegree Technologies Worldwide Inc Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system
US9018833B2 (en) 2007-05-31 2015-04-28 Nthdegree Technologies Worldwide Inc Apparatus with light emitting or absorbing diodes
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US7851336B2 (en) 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US8361834B2 (en) 2008-03-18 2013-01-29 Innovalight, Inc. Methods of forming a low resistance silicon-metal contact
US7704866B2 (en) 2008-03-18 2010-04-27 Innovalight, Inc. Methods for forming composite nanoparticle-metal metallization contacts on a substrate
US8247312B2 (en) 2008-04-24 2012-08-21 Innovalight, Inc. Methods for printing an ink on a textured wafer surface
US7923368B2 (en) 2008-04-25 2011-04-12 Innovalight, Inc. Junction formation on wafer substrates using group IV nanoparticles
US8127477B2 (en) 2008-05-13 2012-03-06 Nthdegree Technologies Worldwide Inc Illuminating display systems
US7992332B2 (en) 2008-05-13 2011-08-09 Nthdegree Technologies Worldwide Inc. Apparatuses for providing power for illumination of a display object
PT2285574E (pt) 2008-06-02 2012-09-10 Pst Sensors Pty Ltd Impressão a jacto de tinta de tintas funcionais de nanopartículas
KR101144808B1 (ko) * 2008-09-01 2012-05-11 엘지전자 주식회사 박막형 태양전지 제조방법 및 이를 이용한 박막형 태양전지
WO2012035493A1 (en) 2010-09-13 2012-03-22 University Of Cape Town Assembling and packaging a discrete electronic component
ES2663098T3 (es) * 2010-09-13 2018-04-11 Pst Sensors (Pty) Limited Método de producción de un sensor de temperatura impreso
KR101710214B1 (ko) * 2011-01-20 2017-02-24 서울시립대학교 산학협력단 염료감응형 태양전지 및 그 제조방법
KR101718548B1 (ko) * 2011-01-26 2017-04-04 서울시립대학교 산학협력단 염료감응형 태양전지 및 그 제조방법
US20120222730A1 (en) * 2011-03-01 2012-09-06 International Business Machines Corporation Tandem solar cell with improved absorption material
KR101714796B1 (ko) * 2011-03-18 2017-03-22 서울시립대학교 산학협력단 태양전지 및 그 제조방법
KR101712212B1 (ko) * 2011-03-21 2017-03-13 서울시립대학교 산학협력단 염료감응형 태양전지 및 그 제조방법
CA2861728C (fr) 2012-01-13 2020-04-28 Arjo Wiggins Fine Papers Limited Procede de fabrication d'une feuille
US8648341B2 (en) * 2012-02-23 2014-02-11 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for testing pads on wafers
CN104662670B (zh) 2012-09-25 2019-03-12 Pst传感器(私人)有限公司 电流开关晶体管
WO2016134706A1 (de) 2015-02-26 2016-09-01 Dynamic Solar Systems Ag Raumtemperatur-verfahren zur herstellung elektrotechnischer dünnschichten und elektrotechnische dünnschicht
WO2016134704A1 (de) 2015-02-26 2016-09-01 Dynamic Solar Systems Ag Pv-schichtfolge erhalten durch ein raumtemperatur-verfahren und raumtemperatur-verfahren zur herstellung einer pv-schichtfolge

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620037A (de) 1962-07-10
DE1201887B (de) 1964-08-01 1965-09-30 Telefunken Patent Verfahren und Vorrichtung zum Einloeten von Transistoren od. dgl.
DE2436600A1 (de) * 1974-07-30 1976-02-19 Semikron Gleichrichterbau Verfahren zur erzielung einer oberflaechenstabilisierenden schutzschicht bei halbleiterbauelementen
NL9000161A (nl) * 1990-01-23 1991-08-16 Koninkl Philips Electronics Nv Halfgeleiderinrichting bevattende een drager en werkwijze voor het vervaardigen van de drager.
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
JP3352252B2 (ja) * 1994-11-04 2002-12-03 キヤノン株式会社 太陽電池素子群並びに太陽電池モジュール及びその製造方法
DE19543205A1 (de) * 1995-11-20 1997-05-22 Bayer Ag Zwischenschicht in elektrolumineszierenden Anordnungen enthaltend feinteilige anorganische Partikel
US6080606A (en) * 1996-03-26 2000-06-27 The Trustees Of Princeton University Electrophotographic patterning of thin film circuits
AU3203199A (en) * 1998-03-27 1999-10-18 Trustees Of Princeton University, The Printed insulators for active and passive electronic devices
JP2000028799A (ja) * 1998-07-07 2000-01-28 Fuji Photo Film Co Ltd 両面集光読取方法用放射線像変換パネルと放射線像読取方法
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
EP1155318A1 (de) 1999-02-25 2001-11-21 Metasensors, Inc. Verfahren und vorrichtung zur echtzeit flüssigkeitanalyse
US6074791A (en) * 1999-02-26 2000-06-13 Xerox Corporation Photoconductive imaging members
US6459035B2 (en) * 1999-12-27 2002-10-01 Asulab S.A. Photovoltaic cell having a colored appearance, particularly for a watch dial
JP2001196166A (ja) * 2000-01-07 2001-07-19 Dainippon Printing Co Ltd エレクトロルミネッセント基板およびエレクトロルミネッセント素子の製造方法
US20030192584A1 (en) * 2002-01-25 2003-10-16 Konarka Technologies, Inc. Flexible photovoltaic cells and modules formed using foils
US6919119B2 (en) * 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
US7122790B2 (en) * 2000-05-30 2006-10-17 The Penn State Research Foundation Matrix-free desorption ionization mass spectrometry using tailored morphology layer devices
US6723606B2 (en) * 2000-06-29 2004-04-20 California Institute Of Technology Aerosol process for fabricating discontinuous floating gate microelectronic devices
AUPQ859000A0 (en) * 2000-07-06 2000-07-27 Commonwealth Scientific And Industrial Research Organisation Apparatus for surface engineering
JP2002052705A (ja) * 2000-08-04 2002-02-19 Ricoh Co Ltd インクジェットヘッド、インクジェットヘッドの製造方法および当該ヘッドを用いた画像形成装置
JP4219083B2 (ja) * 2000-09-20 2009-02-04 富士通株式会社 座標入力装置
EP1339897A2 (de) * 2000-10-16 2003-09-03 Geoffrey Alan Ozin Verfahren zur selbstorganisation und optische anwendungen von kristallinen kolloidalen mustern auf substraten
DE10059498A1 (de) * 2000-11-30 2002-06-13 Infineon Technologies Ag Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats
JP2002278599A (ja) * 2001-03-22 2002-09-27 Matsushita Electric Ind Co Ltd 映像音声復号装置
US7420005B2 (en) * 2001-06-28 2008-09-02 Dai Nippon Printing Co., Ltd. Photocurable resin composition, finely embossed pattern-forming sheet, finely embossed transfer sheet, optical article, stamper and method of forming finely embossed pattern
EP1289030A1 (de) * 2001-09-04 2003-03-05 Sony International (Europe) GmbH Dotierung eines Lochleitermaterials
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
WO2003060986A2 (en) * 2002-01-11 2003-07-24 The Pennsylvania State University Method of forming a removable support with a sacrificial layers and of transferring devices
AU2003243165A1 (en) * 2002-04-26 2003-11-10 The Penn State Research Foundation Integrated nanomechanical sensor array chips
DE10219121A1 (de) * 2002-04-29 2003-11-27 Infineon Technologies Ag Siliziumpartikel als Additive zur Verbesserung der Ladungsträgermobilität in organischen Halbleitern
JP4056817B2 (ja) * 2002-07-23 2008-03-05 光正 小柳 不揮発性半導体記憶素子の製造方法
US20040126582A1 (en) * 2002-08-23 2004-07-01 Nano-Proprietary, Inc. Silicon nanoparticles embedded in polymer matrix
WO2004030072A1 (ja) * 2002-09-25 2004-04-08 Konica Minolta Holdings, Inc. 電気回路、薄膜トランジスタ、電気回路の製造方法及び薄膜トランジスタの製造方法
GB2395059B (en) * 2002-11-05 2005-03-16 Imp College Innovations Ltd Structured silicon anode
CN101248222B (zh) * 2005-08-23 2015-05-13 Pst传感器(私人)有限公司 粒子半导体材料的掺杂

Also Published As

Publication number Publication date
JP2012151480A (ja) 2012-08-09
US20060199313A1 (en) 2006-09-07
WO2004068536A2 (en) 2004-08-12
WO2004068536A3 (en) 2005-01-20
EP1593163B1 (de) 2015-06-17
ES2548627T3 (es) 2015-10-19
EP1593163A2 (de) 2005-11-09
JP2006516819A (ja) 2006-07-06
US8026565B2 (en) 2011-09-27

Similar Documents

Publication Publication Date Title
US8026565B2 (en) Thin film semiconductor device comprising nanocrystalline silicon powder
US8148626B2 (en) Integrated thin-film solar cell and method of manufacturing the same
JP4966653B2 (ja) 共有する有機電極を備えたタンデム型光起電力電池及びその製造方法
CN100570903C (zh) 集成薄膜太阳能电池及其制造方法、及集成薄膜太阳能电池的透明电极的处理方法及其结构、及具有处理过的透明电极的透明基板
US8066840B2 (en) Finger pattern formation for thin film solar cells
US20090223703A1 (en) Method and composition for screen printing of conductive features
US11329177B2 (en) Stable perovskite module interconnects
JP2006516819A5 (de)
CN106165113B (zh) 具有改善的能见度的光伏装置及其制造方法
TW565935B (en) Electronic devices containing organic semiconductor materials
CN109314152A (zh) 太阳能电池及其制造方法以及太阳能电池模块
CN102194900B (zh) 太阳能电池及其制造方法
AU2009239685B2 (en) Procedure for the use of natural cellulosic material, synthetic material or mixed natural and synthetic material, simultaneously as physical and dielectric support in self-sustainable field effect electronic and optoelectronic devices
EA006755B1 (ru) Способ изготовления блока солнечного элемента с использованием временной подложки
EP2837032B1 (de) Photovoltaikmodul
CN108365118B (zh) 柔性显示模组
WO2006106072A1 (en) Process for manufacturing pieces of a foil having an inorganic coating of e. g. tco
US9087953B2 (en) Solar cell module and method for manufacturing the same
CN101926015A (zh) 用于光电子器件的横跨丝网形成的方法、设备和辊轴
WO2010020469A3 (en) Photovoltaic cell and method of manufacturing a photovoltaic cell
JP2007035966A (ja) 有機光電変換素子とその製造方法
KR20190083811A (ko) 유무기 하이브리드 실리콘 박막 태양전지 및 이의 제조방법
US20070152290A1 (en) Thin film light-activated power switches, photovoltaic devices and methods for making micro-fluid ejected electronic devices
KR20220077980A (ko) 높은 효율을 갖는 페로브스카이트 태양전지 및 그 제조방법
JPS59115573A (ja) シリコン半導体電極の形成方法