JP2012151480A - 薄膜半導体デバイスおよび薄膜半導体デバイスの製法 - Google Patents
薄膜半導体デバイスおよび薄膜半導体デバイスの製法 Download PDFInfo
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Abstract
【解決手段】薄膜半導体デバイスは、セルロースを含む材料、より具体的には、紙シート材料の基材および基材上の層に蒸着された無機材料の多数の薄膜層を含み、無機材料の多数の薄膜層のうち少なくとも一つは、該基材または基礎をなす無機材料の薄膜層の一方に印刷され、無機材料の多数の薄膜層のうちの少なくとも一つはナノ結晶シリコン粉末を含む活性半導体層およびポリマーを含む担体を含む。
【選択図】図1
Description
また、薄膜半導体デバイスの製法にも関する。
基材;および
基材上の層に蒸着された無機材料の薄膜活性層を含み、ここに少なくとも1つの活性層は、基材または基礎をなす活性層に印刷されたことを特徴とする薄膜半導体デバイスが提供される。
図2は、紙シートの基材10上に支持される3つの薄膜半導体層を含むボトムゲートMS-FETを示す。ボトムゲートMS-FETは、図1記載のトップゲートMS-FETと同一であり、違いは、半導体層が、反転されて、ボトムゲート電界効果トランジスタを形成することだけであった。これによって、他の活性成分が、トランジスタのソースおよびドレインに直接的に接続し、より迅速にスイッチすることが可能になる。同じ参照数字が、図1記載のトップゲートMS-FETのものと同一であるボトムゲートMS-FETの特徴を指定するために使用される。この実施例において、実施例1のトップゲートMS-FETにおいて使用される同一の印刷プロセスおよび材料を、様々な半導体層に対して使用する。
図面の図3を参照して、2つの電極の間に挟まれた固有半導体24(層2)を含む光電池40の形態の薄膜半導体が示される。より具体的には、光電池は、例えば、Mondi Rotatrimウッドフリー紙のような無地の白色オフィスペーパーのペーパー基材20の主な表面に印刷されるコロイド銀の金属ベースコンタクト22の形態の第1の活性層を含む。固有半導体の形態の第2の活性層は、第1の層に適用される。第2の層は、例えば、第1の層に印刷されるコロイドnc−Siを含む。トップコンタクトを形成する第3の活性層は、例えば、Dupont Luxprint7162E透明伝導材料のようなコロイドインジウムスズ酸化物(ITO)の透明のp型伝導体26であり、これは第2の層に印刷される。任意である第4の層は、透明なラッカーのような誘電材料の透明な保護コーティング28の形態であり、これは第3の層に印刷される。
この実施例は、紙基材20上に蒸着された3つの層を含む光電池の構築を示す。該電池は、連続して接続された3つの光電池40を含む。第1の層は、例えば、紙基材10上に印刷されたコロイド銀の印刷された金属ベースコンタクト50の形態である。第2の層は、例えば、第1の層上に印刷されたコロイドnc−Si層を含むn−i−p配列において、単一の固有半導体層または半導体構造を含む。光電池は、第2の層上に印刷された例えばコロイドITOの透明なトップコンタクト54を含む第3の層を含む。個々の電池は、隣接ストリップのトップおよびボトムコンタクトを重ねることによって、紙基材10を横切ってストリップとして設けられ、電池は自動的に一緒に直列にて連結されることが認識されるだろう。
Claims (27)
- セルロースを含む材料のものである基材;および
基材上の層に蒸着された無機材料の多数の薄膜層を含み、
ここに、無機材料の多数の薄膜層のうち少なくとも一つは、該基材または基礎をなす無機材料の薄膜層の一方に印刷され、無機材料の多数の薄膜層のうち少なくとも一つは、ナノ結晶シリコン粉末を含む活性半導体層およびポリマーを含む担体を含むことを特徴とする薄膜半導体デバイス。 - 該基材が、紙シート材料のものである請求項1記載の薄膜半導体デバイス。
- 該担体が、酢酸酪酸セルロースのものである請求項1に記載の薄膜半導体デバイス。
- 該活性半導体層が、ナノ結晶シリコン粉末、酢酸酪酸セルロースのものである担体および溶媒を含むインクを用いて印刷されている請求項3に記載の薄膜半導体デバイス。
- 該溶媒が、エーテルまたはラッカーシンナーを含む請求項4に記載の薄膜半導体デバイス。
- 透明な耐水性の蓋を含む請求項1に記載の薄膜半導体デバイス。
- 該耐水性の蓋が、デバイス上に印刷される透明なニスまたはラッカーである請求項6に記載の薄膜半導体デバイス。
- 該活性半導体層が、オフセットリソグラフィー印刷、ブロック印刷、スタンプ印刷、凸版印刷、グラビア印刷、活版印刷およびコロイドインクを用いるスクリーン印刷よりなる群から選択される転写印刷プロセスを用いて印刷される請求項1に記載の薄膜半導体デバイス。
- 各活性半導体層が、基材および基礎をなす活性層の一方に印刷される請求項1に記載の薄膜半導体デバイス。
- 光電池の形態である請求項1に記載の薄膜半導体デバイス。
- 該光電池が、該基材の主な表面に印刷される金属コンタクトの形態の第1の層、ナノ結晶シリコンを含み、前記金属コンタクトに適用される第2の層、および活性半導体層である第2の層上に印刷される透明コンタクトを定める第3の層を含む請求項10に記載の薄膜半導体デバイス。
- 該活性半導体層である第2の層が固有半導体を含み、該第3の層がp型半導体を含む請求項11に記載の薄膜半導体デバイス。
- 該第2の層がn−i−p配列の半導体構造を含む請求項11に記載の薄膜半導体デバイス。
- 誘電材料の透明保護コーティングを含み、該第3の層に印刷される第4の層を含む請求項11に記載の薄膜半導体デバイス。
- 該誘電材料の透明保護コーティングが透明ラッカーを含む請求項14に記載の薄膜半導体デバイス。
- 直列にて連結された複数の光電池を含み、各光電池は、少なくとも1つの他の光電池に隣接して形成され、少なくとも1つの光電池の第3の層がその透明コンタクトを定め、隣接する光電池の第1の層を重ねて、その金属コンタクトを定め、それによって隣接する光電池を電気的に直列に連結する請求項11記載の薄膜半導体デバイス。
- 請求項16による少なくとも一つの半導体デバイスを含む電源。
- 電界効果トランジスタの形態である請求項1に記載の薄膜半導体デバイス。
- 該電界効果トランジスタが、基材上に印刷され、金属のソースおよびドレインコンタクトを定める第1の層、ナノ結晶シリコンを含み、該第1の層に適用される第2の層、および該第2の層上に印刷され、金属のゲート電極を定める第3の層を含む請求項18に記載の薄膜半導体デバイス。
- 第1の層の金属のソースおよびドレインコンタクトと第3の層の金属のゲート電極とが相互に対して直角に延びて、「交差」幾何学を定める請求項19に記載の薄膜半導体デバイス。
- 該電界効果トランジスタが、基材上に印刷され、ゲートコンタクトを定める第1の層、ナノ結晶シリコンを含み、該第1の層に適用される第2の層、および該第2の層上に印刷され、金属のソースおよびドレインコンタクトを定める第3の層を含む請求項18に記載の薄膜半導体デバイス。
- 第1の層のゲートコンタクトと第3の層の金属のソースおよびドレインコンタクトとが相互に対して直角に延びて、「交差」幾何学を定める請求項21に記載の薄膜半導体デバイス。
- セルロースを含む材料のものである基材に無機材料の多数の薄膜活性層を蒸着することを含み、ここに少なくとも1つの活性層を、該基材および基礎をなす活性層の一方に印刷し、ここに少なくとも1つの活性層が、ナノ結晶シリコン粉末およびバイオポリマーを含む担体を含むことを特徴とする薄膜半導体デバイスの製法。
- 少なくとも一つの活性層を、オフセットリソグラフィー印刷、ブロック印刷、スタンプ印刷、凸版印刷、グラビア印刷、活版印刷およびコロイドインクを用いるスクリーン印刷よりなる群から選択される転写印刷プロセスを用いて印刷する請求項23に記載の半導体デバイスの製法。
- 各活性層を、基材および基礎をなす活性層の一方に印刷する請求項23に記載の薄膜半導体デバイスの製法。
- 各活性層を、三色または四色リソグラフィー印刷プロセスに適用する請求項23に記載の薄膜半導体デバイスの製法。
- 該活性半導体層が、三色または四色リソグラフィー印刷プロセスによって適用される請求項1に記載の薄膜半導体デバイス。
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- 2004-01-30 EP EP04706753.3A patent/EP1593163B1/en not_active Expired - Lifetime
- 2004-01-30 JP JP2006502374A patent/JP2006516819A/ja active Pending
- 2004-01-30 ZA ZA200506095A patent/ZA200506095B/en unknown
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WO2004068536A2 (en) | 2004-08-12 |
US20060199313A1 (en) | 2006-09-07 |
EP1593163B1 (en) | 2015-06-17 |
EP1593163A2 (en) | 2005-11-09 |
US8026565B2 (en) | 2011-09-27 |
JP2006516819A (ja) | 2006-07-06 |
ES2548627T3 (es) | 2015-10-19 |
WO2004068536A3 (en) | 2005-01-20 |
ZA200506095B (en) | 2006-10-25 |
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