TWI244628B - Method of fabricating organic electroluminescence (EL) display device - Google Patents

Abstract

A method of fabricating organic electroluminescence (EL) display device, capable for fabricating active matrix type organic electroluminescence display device, comprising the step of providing a transparent substrate with a thin-film transistor (TFT) formed thereon. A pair of metal lines are respectively covered on a portion of the surface and the sidewall of the TFT and connected to a source region and drain region thereof, wherein the metal line connecting the drain region further extends to the transparent substrate. A transparent electrode is then formed on the transparent and electrically connected with the metal line connecting the drain region and an organic luminescence layer and a metal electrode are then sequentially formed on portions of the transparent electrode to form an organic light emitting diode.

Description

(1) 1244628

[Technical field to which the invention belongs] The present invention relates to a method for manufacturing an organic electroluminescent display device, and particularly to a method for manufacturing an active matrix organic electroluminescent display device using a less-manufactured photomask to reduce Manufacturing time, saving production costs. [Previous technology] In the new generation of flat display technology, organic electroluminescence display (〇iganic electroluminescence display) is a thin film multilayer display using organic compounds as light-emitting materials, which has self-luminous, wide viewing angle, thin, lightweight , Low driving voltage, simple process and so on ^ Its main light-emitting principle is to use an organic light-emitting layer composed of dye or polymer between the cathode (cathode) and anode = node to passive matrix structure and high photoluminescence The display of the daytime surface drives the crystal to be like an organic: the driving method of the electrophoretic display, generally can be distinguished by the moment // (P = lve / atrix) and the active matrix type (act ~, species. Passive matrix organic electricity). Excitation light display: Second, it is conducive to simplifying the process and reducing the cost, m has a bad influence on the resolution. The advantage of the active moment ^ in the large i-transmitter is that it can increase the demand for displays and high resolution. The number of lines further achieves the dynamic function. In the production of thin-film transistors, the body and the main are used to make the charge move quickly and obtain uniformity. 1 US Patent No. 6 5 3 8 39 0, discloses-, insert. Active matrix type 1244628 V. Description of the invention (2) Organic light emitting diode display device structure and manufacturing method thereof. The disclosed display In the device structure, organic light emitting diode elements are stacked and formed in the film layer above the thin film transistor element, and the manufacturing process is tedious, which is not conducive to reducing the production cost. [Summary of the Invention] In view of this, the main purpose of the present invention is to Provided is a method for manufacturing an active matrix organic electroluminescent display device. The number of process masks required can be greatly reduced, which can save production time and further reduce manufacturing costs. The prepared display device will have more product competitiveness. The method for manufacturing an organic electroluminescent display device of the invention is suitable for preparing a display unit of an active matrix organic electroluminescent display device, and the steps include: connecting the metal to the polar region and making the polar region transparent; and partly, There may be a good wire for the cover when layered, and it is knotted on a thin metal substrate in order to shape the surface. Rate performance provides a transparent substrate on which a thin film transistor is formed; forming a source region and a non-electrode region respectively covering a part of the surface and sidewalls of the thin film transistor and a source of the film transistor, wherein the connecting wires are more, and It has a transparent structure and a transparent structure. It also extends to the transparent substrate. It also forms a transparent electrode to connect the metal wire of the drain region to form a light emitting layer of the electrical connector. A metal electrode forms an organic light-emitting diode on the transparent electrode. Polar body. A long distance from the moon electrode to the surface of the thin-film transistor. The use of a shadow mask to prepare an organic light emitting electrode can greatly improve the organic light emitting diode. The transparent electrode of the present invention is directly connected to the connection 0632-A50. 3〇TWF (Nl); AU0308007; Shawn.P ^ Page 7 1244628 V. Description of the invention (3) The metal guide of the thin film transistor 飨 π μ ^ private, which can reduce the contact between them. The above-mentioned and development ^ ^ ^ even more "his purpose, characteristics, and advantages are obvious and easy to understand. The following gives a more practical example of A γ, 焉 %%, and the detailed description with the accompanying drawings Under ·· '[Embodiment] Embodiments of the present invention with a sectional view of the FIG. 1 to 7 of a flowchart as described in detail below. As shown in FIG. 1, firstly, a transparent substrate 10 is provided. The transparent substrate 10 may be a transparent broken glass substrate or a transparent plastic substrate. If it is a plastic substrate, the material may be polyethylene-paraben. polyethyleneterephthalate), polyesters, polycarbonates, polyacrylates, or polystyrene. A buffer layer can be further formed on the transparent substrate, for example, a composite buffer layer composed of a silicon nitride layer and a silicon oxide layer, so as to enhance the ability of the subsequent film layer to adhere to the transparent substrate 10 And can improve the rough longitude of the surface of the transparent substrate 10. Next, an active layer is formed on the transparent substrate 10, for example, a polycrystalline silicon layer or an amorphous silicon layer having a thickness of about 4,000 to 6,000 angstroms, and a subsequent lithography / etching process (not shown) ), Patterned with the use of a first photomask (not shown) designed with a predetermined pattern to leave a patterned active layer 12 on the transparent substrate 10. Please continue to refer to FIG. 2, and then form an insulating layer 14 on a transparent substrate and cover the active layer 12. The insulating layer 4 is, for example, a silicon dioxide layer, and has a thickness of about 80 to 10 0 0 Angstroms. A conductive layer is formed on the insulating layer 4

0632-Α50030Τ \\ Ψ (Ν1); AU0308007; Shawn.ptd 1244628 V. Description of the invention (4) Second, = materials such as aluminum, titanium, tantalum, chromium, molybdenum, molybdenum tungsten, or combinations thereof (not The thickness-degree of the image is between 1800 and 2200 angstroms, and it can be used by subsequent lithography / etching. It is matched with the design of a second photomask (not shown) with a predetermined pattern. Make it patterned to form a patterned gate electrode on the insulating layer 14. 6. It is better to go to the screen with a change-over procedure (not shown), using the interrogation electrode 16 as a cover: (illustration), for example This is an ion implantation procedure, which is directed to the & > shell and active layer 12 and further opens from 12a in the active layer 12 to form a source region 12b and a polar region 12. And the channel area in between, so on the transparent substrate! 〇Then, the gate electrode 16 and the active sound 12 form a gate dielectric layer of the transistor 18 and the crystal 18. The insulating layer 14 between the two can be used as the thin film electrical Angstrom] $ 二 = 图 一 ' Then, a thickness of about 300-3500 is set up, and an interlayer dielectric layer is formed on a thin amine ^ > n through subsequent lithography / money engraving to "body 18 and insulating layer | 4". A subsequent third mask (not shown). (Not shown), in conjunction with the design of a predetermined pattern above the polar region 12c, the interlayer dielectric design is used to simultaneously pattern the adjacent insulating and / or insulating layers with respect to the source region center and no holes 20, respectively, to define contact formations Covered with patterning: and an interlayer dielectric layer on the transparent base 1δ, and partially exposed the interlayer dielectric 极 of the thin-film transistor 12b and the non-polar region i 2c of the transparent substrate 10 are V: The surface of the source region 12b and the drain region 12c of the thin film transistor 18 '. V 乂 has the contact hole 20 and exposes the source inside. Please continue to refer to FIG. 4. Then, a metal layer is formed on the transparent substrate 10 and the film is formed to a thickness of about 28 0 0 to 3 5 0 0. And fill in the contact hole

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Within 2 〇. Subsequently, the subsequent lithography / etching process (not shown) is used to pattern the metal layer with the use of a fourth photomask (not shown) with a predetermined pattern. Finally, a transparent layer 10 is left. For the metal wires 24a and 24b, these f lines respectively cover the thin film transistor 1δ, and are partly inserted into the previous contact hole 20 to connect the source region 2b and the drain region 12c / which is connected to the drain The metal wire 24 b of the electrode region 12 c covers one side wall of the thin film transistor and extends to a part of the surface of the transparent substrate 10. Makeup 18 Please continue to refer to FIG. 5, and then form a second conductive layer having a thickness of about 7500 to 100 angstroms on the transparent substrate. The material is, for example, indium tin oxide & material (ιτο), indium. Transparent conductive materials such as zinc oxide (IZ0), zinc aluminum oxide (AZ) or zinc oxide (ZηΟ). Subsequently, the second lithography / etching process (not shown) is used to pattern the second conductive layer in cooperation with a fifth photomask (not shown) with a predetermined pattern to form the transparent substrate 1. A transparent electrode 26 is formed thereon, and the transparent electrode 26 is partially covered on the metal wire 24b to directly form an electrical connection with the thin film transistor 18 ', which can reduce the contact resistance therebetween. 'House ss Please continue to refer to FIG. 6, and then form a protective layer on the transparent substrate 10, with a thickness of about 2800 to 3300 angstroms. Subsequently, by a subsequent lithography / money engraving process (not shown), a sixth photomask (^ illustration ^) designed with a predetermined pattern is used to pattern it to form a protective layer 2 on the transparent substrate 10. 8. This protective layer 28 covers the thin film transistor 1 8 'and part of the transparent S electrode 26. ° Please continue to refer to Figure 7, and then cooperate with the seventh photomask (not shown) with a predetermined pattern. An organic light emitting layer 30 and a metal electrode 32 are sequentially formed on the transparent electrode 26 in order to form an organic light emitting layer.

0632-A50030TWP (Nl); AU0308007; Shawn.ptd Page 10 丄 244628 ---- V. Description of the invention (6) Body 3 4, organic light-emitting layer 3 〇 and metal lightning 200 ～ 3 0 0 0 Egypt 5 0 0 to 1 0 0 0 Angstroms. The thicknesses of σ32 are about respectively. Here, the material of this organic light-emitting layer 30 is | 4 or a light-emitting diode material, and its structure can be more spoonful =: ', small molecules or polymers have one of the 26 holes The injection layer and an organic emission layer are sequentially formed on the transparent electrode. Here, to simplify the illustration, only the electron emission layer is used. If the material of the organic light emitting layer 30 is a small eight: the first layer is not shown. At that time, it can be formed by using the * air evaporation method with ^ organic light-emitting diode materials; if the material is a shadow mask, spin coating and inkjet can be used; At the time of printing, the metal electrode 32 can be formed as an A-Shi Kui method. ^, Whose _ can be selected from ..., ==, numerical materials or composite metal materials. , And / or low-level work and the light source 7V: the thin film 1 crystal 18 formed on the light-transmitting substrate 10 is constituted by an appropriate electrical connection-active method, η ;: ΐ display unit 36. According to the manufacturing method of the present invention, it is shown that the element nc can complete the production and production of active matrix electric excitation, which can be less than if disclosed in the US patent No. 6 5 3 8 39; The manufacturing method of the photomask of nearly 10 processes is omitted. * Invented active display has a light display. The method is simpler and requires fewer process masks, which can shorten the time for money clerks, and can reduce the overall production cost to greatly increase the cost. Product competitiveness. 4 1244628 V. Description of the invention (7) In addition, as shown in FIG. 7, the transparent electrode 26 prepared by the manufacturing method of the present invention covers the top surface of the protective layer on the thin film transistor 1 8 'about 8 0 0 0 A distance d of ~ 1 0 0 0 0 angstroms can avoid the scratches on the transparent electrode caused by the shading 〇w mask used when the organic light emitting layer 30 is prepared by using small molecular organic light emitting diode materials. Effectively improve the yield of organic light-emitting diodes 34. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application.

0632-A50030TWF (Nl); AU0308007; Shawn.ptd Page 12 1244628 Brief description of the drawings Figures 1 to 7 are a series of cross-sectional views for illustrating the production of an active matrix organic electroluminescent light in an embodiment of the present invention Manufacturing method of display device. [Description of related symbols] 10 to transparent substrate; 12 to active layer; 1 2 a to channel area; 1 2 b to source area, 1 2 c to > and polar area, 1 4 to insulation layer; 1 6 ~ Gate electrode, 18, 18 '~ thin film transistor; 20 ~ contact hole; 2 ~ interlayer dielectric layer; 24a, 24b ~ metal wire; 26 ~ transparent electrode; 28 ~ protective layer; 3 0 ~ Organic light emitting layer; 3 2 ~ metal electrode; 3 4 ~ organic light emitting diode; 36 ~ organic electroluminescent display unit; d ~ distance of transparent electrode from top surface of protective layer.

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Claims (1)

1244628 VI. Scope of patent application 1. A method for manufacturing an organic electroluminescent display device, including the following steps: providing a transparent substrate with a thin film transistor formed thereon; forming a pair of metal wires covering the thin film transistor respectively Part of the surface and the side wall are respectively connected to a source region and a drain region of the thin film transistor, wherein a metal wire connected to the drain electrode extends to the transparent substrate; forming a transparent electrode on the transparent substrate, And forming an electrical connection with the metal wire connected to the drain electrode; and sequentially forming an organic light emitting layer and a metal electrode on a part of the surface of the transparent electrode to form an organic light emitting diode. 2. The method for manufacturing an organic electroluminescent display device as described in item 1 of the scope of patent application, wherein the steps of forming the metal wires include: defining the thin film transistor with respect to the source region and the drain region. A contact hole is formed at each position and the surface of the source region and the drain region are exposed respectively; a metal layer is deposited on the thin film transistor and filled in the contact holes; and the metal layer is defined to form two Independent metal wires respectively cover part of the surface and the side wall of the thin film transistor, and are respectively connected to the source and the end of the thin film transistor. 3. The method for manufacturing an organic electroluminescent display device according to item 2 of the scope of patent application, wherein before forming an organic light emitting layer and a metal electrode on a part of the surface of the transparent electrode in sequence, the method further includes forming an organic light emitting layer. The protective layer 0632-A5〇0030TWF (N; U; AU0308007: Shawn.ptd Page 14 1244628 Patent application: Ϊ 盖 Ϊ 4 ΪMetal wire, the thin film transistor and a part of the "step" | ▶ Make the organic The light-emitting diode electric property ρ hetero # "where the wire and the thin film transistor are the same. The same as the metal conductor 4. The manufacturing method of the organic device as described in item 1 of the patent scope, wherein the thin film is formed Transistor = light display installation steps: <Wanfa, including the following steps: forming an active layer on the transparent substrate to form an insulating layer on the active layer ;,; forming a gate electrode on the insulating layer, the body opposite Above the center of the active layer, and the position of the M Θ electrode, a doping process is performed to form the active layer self-aligned by using the gate electrode as a gate electrode. It is located in the channel area between the source region and the drain region of the 5th Hai, a dagger placed in the drain region. The light-emitting display device (1,0), indium zinc oxide (u〇 ^, zinc, the material is indium tin) Oxide (Zn〇). UZ〇) Aluminium oxide (AZO) or zinc oxide 6 · As stated in the patent The manufacturing method of the surrounding Chu 1 device, and a hole injection machine light emitting layer on the organic electroluminescent display device electrode of the China Institute of Science and Technology 34 is composed of the transparent layer in order. Layer, organic light emitting material Layer and an electronic note w: ίI '专 ί The organic electro-excitation light display device described in the first item of the board. The transparent substrate is transparent glass or transparent plastic base. Page 15 0632-A50030TWF (Nl); AU0308007; Shawn.ptd 1244628 6. Application for patent scope 8. The method for manufacturing an organic electroluminescent display device as described in the first scope of the patent application, wherein the material of the organic light-emitting layer is a small molecule Or high-molecular organic light-emitting diode materials. 9. The method for manufacturing an organic electroluminescent display device as described in item 8 of the patent application scope, wherein the small-molecule organic light-emitting diode material is formed by a vacuum evaporation method. 10. The method for manufacturing an organic electroluminescent display device as described in item 9 of the scope of the patent application, wherein the distance between the transparent electrode and the top surface of the protective layer can be increased to 8 0 0 to 1 0 0 0 0 angstroms. To avoid formation A shadow mask used in the organic light emitting layer scratches the transparent electrode. 1 1. The method for manufacturing an organic electroluminescent display device as described in item 9 of the scope of patent application, wherein the polymer organic light emitting diode The material is formed by spin coating, inkjet or screen printing. 0632-A50030TWF (N1); AU0308007: Shawn.ptd page 16