WO2023112252A1 - ヘテロ接合バイポーラトランジスタ - Google Patents

ヘテロ接合バイポーラトランジスタ Download PDF

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WO2023112252A1
WO2023112252A1 PCT/JP2021/046506 JP2021046506W WO2023112252A1 WO 2023112252 A1 WO2023112252 A1 WO 2023112252A1 JP 2021046506 W JP2021046506 W JP 2021046506W WO 2023112252 A1 WO2023112252 A1 WO 2023112252A1
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layer
emitter
collector
base layer
base
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English (en)
French (fr)
Japanese (ja)
Inventor
拓也 星
悠太 白鳥
弘樹 杉山
佑樹 吉屋
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NTT Inc
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Nippon Telegraph and Telephone Corp
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Priority to JP2023567431A priority Critical patent/JP7740373B2/ja
Priority to PCT/JP2021/046506 priority patent/WO2023112252A1/ja
Publication of WO2023112252A1 publication Critical patent/WO2023112252A1/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs

Definitions

  • the present invention relates to heterojunction bipolar transistors.
  • Nitride semiconductors are promising materials for high-speed, high-voltage electronic devices due to their large bandgap.
  • High electron mobility transistors using high-density sheet carriers generated by polarization of AlGaN/GaN have been actively studied by many research institutes, and have been used as amplification transistors for communication amplifiers and high-efficiency transistors. It has already been put to practical use as a power device.
  • a heterojunction bipolar transistor is a device structure that can achieve both high speed and high withstand voltage by using a high withstand voltage material for the collector layer.
  • group III-V compound semiconductors using InP or GaAs as a substrate material, and group IV materials using SiGe as a base layer it has been reported that a cutoff frequency of several hundreds of GHz, a maximum oscillation frequency, and a high withstand voltage can both be achieved in HBT structures. There are many.
  • nitride semiconductors such as GaN p-type at a high concentration due to the following reasons.
  • the ionization energy of impurities functioning as acceptors is very high.
  • Nitride semiconductors are grown by general growth techniques such as MOCVD, but when p-type doping is carried out, H (hydrogen) contained in the carrier gas and raw materials makes the doped dopant (Mg, Zn, etc.) unsuitable. There is an inherent problem of being activated and not being able to have high hole concentrations.
  • Nitride semiconductors are materials having polarization in the c-axis direction, and devices are generally manufactured by crystal growth (in the +c-axis direction) in a plane orientation called the group III polar plane.
  • the group III polar plane when AlGaN is grown on GaN, the electric field due to the difference in magnitude of spontaneous polarization between the materials and the polarization electric field generated by the strain generated in the AlGaN layer bend the band, resulting in the interface between AlGaN and GaN.
  • a two-dimensional electron gas is generated at Utilizing this, a GaN channel HEMT structure has been realized, and high-frequency devices using this have already been put to practical use.
  • the configuration in which the main surface is the N-polar (group V polar) plane is the inversion of the group III polar plane.
  • the direction of the electric field generated by polarization is reversed from that of the group III polar plane.
  • a two-dimensional hole gas is generated at the AlGaN/GaN interface due to the polarization electric field (see Non-Patent Document 1).
  • the above-described two-dimensional hole gas can be used to overcome the problem of p-type doping control.
  • a two-dimensional hole gas 321 is formed at the interface between the emitter layer 305 made of AlGaN and the p-base layer 304a made of p-type GaN.
  • This HBT comprises a buffer layer 307 formed on a substrate 301, a subcollector layer 302 made of an n-type nitride semiconductor formed on the buffer layer 307, and a subcollector layer 302 formed on the subcollector layer 302. , a collector layer 303 made of n-type GaN, a p-base layer 304a made of p-type GaN formed on the collector layer 303, and a base layer made of undoped GaN formed on the p-base layer 304a. 304b, an emitter layer 305 formed on the base layer 304b, and an emitter cap layer 306 formed on the emitter layer 305 and made of an n-type nitride semiconductor.
  • This HBT also has an emitter electrode 311 formed on the emitter cap layer 306 , a base electrode 312 formed on the base layer beside the emitter layer 305 , and a collector electrode 313 connected to the subcollector layer 302 .
  • an emitter electrode 311 formed on the emitter cap layer 306
  • a base electrode 312 formed on the base layer beside the emitter layer 305
  • a collector electrode 313 connected to the subcollector layer 302 .
  • the concentration of the base layer is increased by the two-dimensional hole gas 321, it is important that the emitter layer 305 also exists directly under the base electrode 312.
  • the emitter layer 305 made of AlGaN is High resistance. Therefore, as shown in FIG. 8A, forming the base electrode 312 directly above the emitter layer 305 increases the ohmic contact resistance. In order to obtain good ohmic contact between the base layer 304b and the base electrode 312, as shown in FIG. Ingenuity is required.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to obtain good ohmic contact between the base layer and the base electrode in a GaN-based bipolar transistor structure.
  • a heterojunction bipolar transistor comprises a subcollector layer made of an n-type nitride semiconductor formed on a substrate, and InGaN formed on the group V polar plane side of the subcollector layer.
  • a collector layer configured to be n-type, a base layer formed in contact with the group V polar face of the collector layer and made of InGaN having an In composition smaller than that of the collector layer, and a base layer in contact with the group V polar face of the base layer an emitter layer formed of InGaN or GaN having an In composition smaller than that of the base layer; an emitter contact layer formed of an n-type nitride semiconductor formed on the side of the V-group polar face of the emitter layer; and an emitter.
  • an emitter electrode connected to the contact layer, a base electrode connected to the base layer, a collector electrode connected to the subcollector layer, a base layer near the interface between the base layer and the collector layer, and an interface between the collector layer and the base layer With a two-dimensional hole gas formed in each of the adjacent collector layers.
  • the collector layer is made of InGaN
  • the base layer is made of InGaN having a lower In composition than that of the collector layer
  • the emitter layer is made of is made of InGaN or GaN with a small , it is possible to obtain good ohmic contact between the base layer and the base electrode in a GaN-based bipolar transistor structure.
  • FIG. 1 is a cross-sectional view showing the configuration of a heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 2A is a band diagram showing band states of the heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 2B is a characteristic diagram showing the result of calculating the sheet carrier density of the heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 3A is a band diagram showing band states of the heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 3B is a characteristic diagram showing the result of calculating the sheet carrier density of the heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 1 is a cross-sectional view showing the configuration of a heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 2A is a band diagram showing band states of the heterojunction bipolar transistor according to Embodiment 1 of the present
  • FIG. 4A is a cross-sectional view showing a state of the heterojunction bipolar transistor in an intermediate step for explaining the method of manufacturing the heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 4B is a cross-sectional view showing the state of the heterojunction bipolar transistor in an intermediate step for explaining the method of manufacturing the heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 4C is a cross-sectional view showing the state of the heterojunction bipolar transistor in an intermediate step for explaining the method of manufacturing the heterojunction bipolar transistor according to the first embodiment of the present invention.
  • FIG. 4A is a cross-sectional view showing a state of the heterojunction bipolar transistor in an intermediate step for explaining the method of manufacturing the heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 4B is a cross-sectional view showing the state of the heterojunction bipolar transistor in an intermediate step for explaining the method of manufacturing the heterojunction bi
  • FIG. 4D is a cross-sectional view showing the state of the heterojunction bipolar transistor in an intermediate step for explaining the method of manufacturing the heterojunction bipolar transistor according to Embodiment 1 of the present invention.
  • FIG. 5A is a characteristic diagram showing the relationship between the In composition of the collector layer made of InGaN and the hole concentration when the base layer is made of GaN (the In composition is set to 0).
  • FIG. 5B is a characteristic diagram showing the relationship between the In composition of the collector layer made of InGaN and the hole concentration when the In composition of the base layer 104 made of InGaN is set to 0.05.
  • FIG. 5A is a characteristic diagram showing the relationship between the In composition of the collector layer made of InGaN and the hole concentration when the In composition of the base layer 104 made of InGaN is set to 0.05.
  • FIG. 5C is a characteristic diagram showing the relationship between the In composition of the collector layer made of InGaN and the hole concentration when the In composition of the base layer 104 made of InGaN is set to 0.10.
  • FIG. 6 is a cross-sectional view showing the configuration of a heterojunction bipolar transistor according to Embodiment 2 of the present invention.
  • FIG. 7 is a cross-sectional view showing the configuration of a heterojunction bipolar transistor according to Embodiment 3 of the present invention.
  • FIG. 8A is a cross-sectional view showing a conventional GaN-based HBT structure with N-polarity as the main surface orientation.
  • FIG. 8B is a cross-sectional view showing a conventional GaN-based HBT structure with N-polarity as the main surface orientation.
  • FIG. 8C is a cross-sectional view showing a conventional GaN-based HBT structure with N-polarity as the main surface orientation.
  • a heterojunction bipolar transistor according to an embodiment of the present invention will be described below.
  • This heterojunction bipolar transistor first comprises a subcollector layer 102 formed on a substrate 101 and a collector layer 103 formed on the group V polar plane side of the subcollector layer 102 .
  • the subcollector layer 102 is formed on the buffer layer 107 and the collector layer 103 is formed on the subcollector layer 102 .
  • the subcollector layer 102 can be composed of a highly n-type doped nitride semiconductor (GaN or InGaN).
  • the subcollector layer 102 can be composed of heavily n-type doped GaN. Since the sub-collector layer 102 also functions as a contact layer for achieving ohmic contact with the collector electrode 113, which will be described later, the doping concentration is set to a relatively high concentration (for example, 5 ⁇ 10 18 cm ⁇ 3 or more). .
  • the subcollector layer 102 grows relatively thick within a range that does not affect the device characteristics.
  • the subcollector layer 102 is preferably set to have a thickness of at least 1 ⁇ m or more in order to function as a buffer layer for improving crystal quality.
  • the collector layer 103 is composed of InxGa1 -xN (0 ⁇ x ⁇ 1).
  • the doping concentration for making the InGaN forming the collector layer 103 n-type is set lower than that of the subcollector layer 102, for example.
  • the collector layer 103 can be made of n-type InGaN with an n-type impurity concentration of about 10 17 cm ⁇ 3 .
  • This HBT has a base layer 104 formed in contact with the group V polarity surface of the collector layer 103, an emitter layer 105 formed in contact with the group V polarity surface of the base layer 104, and a group V layer of the emitter layer 105. and an emitter contact layer 106 formed on the polar surface side.
  • the base layer 104 is made of InGaN with an In composition smaller than that of the collector layer 103 . With this configuration, a two-dimensional hole gas 121 can be generated in the collector layer 103 near the interface between the collector layer 103 and the base layer 104 by the polarization electric field.
  • the base layer 104 can also be made of p-type InGaN.
  • the collector layer 103 can be made of InGaN having an In composition 0.05 or more larger than that of InGaN forming the base layer 104 .
  • the base layer 104 can be made of InGaN with an In composition of 0.1 or more. Note that the base layer 104 can have a thickness of, for example, about 4 nm.
  • the emitter layer 105 is made of InGaN or GaN with a smaller In composition than that of the base layer 104 .
  • the In composition is varied, a two-dimensional hole gas 121 can be generated in the base layer 104 near the interface between the base layer 104 and the emitter layer 105 by the polarization effect.
  • the emitter layer 105 has a bandgap larger than that of the base layer 104, reverse injection of holes to the emitter side can be suppressed, and the current gain can be increased.
  • the emitter contact layer 106 is composed of an n-type nitride semiconductor.
  • the emitter contact layer 106 is a layer for forming an ohmic contact with a low contact resistance, and has a high n-type impurity concentration.
  • the emitter contact layer 106 can have an n-type impurity concentration of 5 ⁇ 10 18 cm ⁇ 3 or more. In this layer, it is effective to increase the impurity concentration and narrow the bandgap for ohmic contact with the metal. Therefore, the emitter contact layer 106 is not limited to GaN, and can be made of InGaN or the like. Also, the emitter contact layer 106 can have a thickness of about 100 nm.
  • This HBT is formed on the emitter contact layer 106, and has an emitter electrode 111 connected to the emitter contact layer 106, a base electrode 112 connected to the base layer 104, and a collector electrode 113 connected to the subcollector layer. Prepare. In Embodiment 1, base electrode 112 is formed on and in contact with emitter layer 105 .
  • subcollector layer 102, collector layer 103, base layer 104, emitter layer 105, and emitter contact layer 106 are arranged in this order on substrate 101 with their main surfaces being V-group polar surfaces. is laminated to The emitter contact layer 106 is formed in a mesa shape, and the base electrode 112 is formed on the emitter layer 105 on the sides of the emitter contact layer 106 .
  • the substrate 101 is made of a material used for forming a nitride semiconductor device. Select materials.
  • the substrate 101 can be sapphire, C-plane SiC substrate, N-polar GaN, N-polar AlN substrate, or the like.
  • the buffer layer 107 can be a nitride layer on the substrate surface formed by subjecting the surface of the substrate 101 to high-temperature heat treatment in an atmosphere of a source gas such as ammonia. .
  • a crystal of a nitride semiconductor having an N-polar plane as a main surface orientation can be grown.
  • the substrate 101 is a GaN single crystal substrate or an AlN single crystal substrate having an N-polar plane as a main surface orientation
  • a nitride semiconductor having an N-polar plane as a main surface orientation is used as the substrate 101 without using a special buffer layer. can grow.
  • collector layer 103 near the interface between base layer 104 and collector layer 103 and base layer 104 near the interface between base layer 104 and emitter layer 105 have 2D hole gas 121 is provided.
  • the HBT according to Embodiment 1 in which the two-dimensional hole gas 121 is formed will be described in more detail below.
  • the results of calculation of changes in the band when the In composition of the base layer 104 is changed and changes in the sheet carrier density associated therewith are shown in FIGS. 2A and 2B. will be described with reference to The following conditions were used in the calculation.
  • the subcollector layer 102 was made of n-type GaN with an impurity concentration of about 10 19 cm ⁇ 3
  • the collector layer 103 was made of InGaN with an In composition of 0.15 and had a thickness of 100 nm.
  • the base layer 104 was 5 nm thick
  • the emitter layer 105 was 20 nm thick. 2A and 2B, the numbers (0.05, 0.07, 0.10, 0.12) shown in the figures indicate the In composition of InGaN forming the base layer 104.
  • the amount of two-dimensional hole gas (2DHG) generated by polarization depends on the difference in composition at the heterointerface.
  • the In composition of the base layer 104 is changed in the range of 0.05 to 0.12, the In composition difference between the base layer 104 and the collector layer 103 becomes small. Therefore, as the In composition of the base layer 104 increases, the hole concentration of the two-dimensional hole gas 121 formed in the base layer 104 increases, and the hole concentration of the two-dimensional hole gas 121 formed in the collector layer 103 increases. concentration becomes smaller.
  • the In composition of InGaN applied to the base layer 104 is preferably at least greater than 0.10. That is, the effect is exhibited more under the condition that the In composition of InGaN constituting the base layer 104 ⁇ 0.10.
  • FIG. 3A and FIG. 3B show the results of calculating changes in the band when the In composition of the collector layer 103 is changed and changes in the sheet carrier density associated therewith.
  • 3A and 3B show the influence of the In composition of the collector layer 103.
  • FIG. The following conditions were used in the calculation.
  • the subcollector layer 102 was made of n-type GaN with an impurity concentration of about 10 19 cm ⁇ 3
  • the base layer 104 was made of InGaN with an In composition of 0.10 and had a thickness of 5 nm.
  • the collector layer 103 was 100 nm thick
  • the emitter layer 105 was 20 nm thick.
  • 3A and 3B, the numbers (0.10, 0.12, 0.15, 0.17) shown in the figures indicate the In composition of InGaN forming the collector layer 103.
  • the In composition of the collector layer 103 is the same as the In composition of the base layer 104 (0.10), no two-dimensional hole gas is formed in the collector layer 103 near the interface between the collector layer 103 and the base layer 104 . Only when the In composition of the collector layer 103 becomes larger than that of the base layer 104, two-dimensional holes are generated in the collector layer 103 near the interface between the collector layer 103 and the base layer 104 due to the polarization of the hetero interface due to the difference in In composition. A gas 121 is formed. It can be seen that as the In composition of the collector layer 103 increases in the range of 0.1 to 0.17, the concentration of the two-dimensional hole gas 121 formed in the collector layer 103 increases.
  • In composition of InGaN forming the collector layer 103 it is necessary to set the In composition of InGaN forming the collector layer 103 to be higher than the In composition of the base layer 104 . That is, "In composition of InGaN forming the collector layer 103>In composition of InGaN forming the base layer 104>0".
  • the In composition of the collector layer 103 when the In composition of the base layer 104 is 0.10, the In composition of the collector layer 103 is set to 0.15 or more, thereby forming a two-dimensional A high concentration can be obtained in both the hole gas 121 and the two-dimensional hole gas 121 formed in the collector layer 103 . Therefore, it is effective that the In composition of InGaN forming the collector layer 103 is 0.05 or more than the In composition of InGaN forming the base layer 104 . That is, it can be said that a sufficient hole concentration can be obtained under the condition of "In composition of InGaN forming the collector layer 103-In composition of InGaN forming the base layer 104 ⁇ 0.05".
  • a buffer layer 107, a sub-collector layer 102, a collector-forming layer 203 made of InGaN, a base-forming layer 204 made of InGaN, an emitter-forming layer 205 made of GaN, and an n-type layer are formed on a substrate 101 as shown in FIG. 4A.
  • the emitter contact forming layer 206 made of a nitride semiconductor (for example, GaN) is successively crystal-grown with the main surface being the group V polar plane.
  • the above-described crystal growth can be performed by well-known molecular beam epitaxy (MBE), metal organic vapor phase epitaxy (MOVPE), or the like.
  • an emitter electrode 111 is formed on the emitter contact formation layer 206. Then, as shown in FIG.
  • the emitter electrode 111 is formed using a material and conditions that form an ohmic connection with the emitter contact forming layer 206 (emitter contact layer 106).
  • the emitter electrode 111 can have a laminated structure such as Ti/Al/Ni/Au.
  • An ohmic connection can be formed between the emitter electrode 111 and the emitter contact formation layer 206 by performing a predetermined heat treatment. Since this heat treatment may deteriorate the morphology and shape of the electrode surface and edges, a protective film can be formed to protect the emitter electrode 111 from these.
  • the emitter contact layer 106 can be formed by etching the emitter contact formation layer 206 by self-alignment dry etching using the emitter electrode 111 as a mask. In this process, etching is stopped at the surface of the emitter formation layer 205 . It is not easy to stop etching the emitter contact formation layer 206 made of GaN at the surface of the emitter formation layer 205 made of GaN. For this reason, the emitter contact forming layer 206 can be made of a material other than GaN, and the conditions can be such that the etching selectivity with respect to GaN can be easily obtained.
  • the above-described self-alignment process does not necessarily have to be adopted if the electrode shape becomes non-uniform due to the heat treatment for forming the ohmic connection or if the emitter electrode 111 is damaged due to dry etching.
  • the base electrode 112 is formed on the emitter formation layer 205 around the mesa-shaped emitter contact layer 106 .
  • the base electrode 112 is formed on and in contact with the emitter formation layer 205 . Further, by performing heat treatment, an ohmic connection is formed between the base formation layer 204 (base layer 104) and the base electrode 112 via the emitter formation layer 205 made of GaN.
  • the base electrode 112 can be constructed from a material system such that such an ohmic contact is formed.
  • the emitter formation layer 205 (emitter layer 105) is made of GaN, even if the base electrode 112 is formed on the emitter layer 105, electrical connection with the base layer 104 can be achieved without increasing the resistance. It is possible. In addition, since the base electrode 112 is formed while the emitter layer 105 remains, the two-dimensional hole gas 121 formed in the base layer 104 directly below the emitter layer 105 is not lost, and even in the region directly below the base electrode 112, High hole concentration and low contact resistance can be achieved.
  • the base layer is composed of GaN (In composition is 0)
  • the base layer has a two-dimensional structure due to the polarization effect. No hole gas is generated.
  • the In composition of the collector layer 103 exceeds 0.10, the hole concentration of the two-dimensional hole gas 121 in the collector layer 103 indicated by black squares and the overall hole concentration indicated by black triangles increase dramatically. are doing.
  • the overall hole concentration indicated by black triangles begins to increase when the In composition of the collector layer 103 exceeds 0.1. Therefore, by setting the I composition of the collector layer 103 to 0.1 or more, the effects of the present invention can be obtained more effectively.
  • the rise in the hole concentration of the two-dimensional hole gas 121 formed in the collector layer 103 indicated by the black squares is The composition shifts to the higher side.
  • the hole concentration of the two-dimensional hole gas 121 formed in the collector layer 103 increases by the amount corresponding to the increase in the In composition. The rise shifts to where the In composition increased to about 0.15.
  • the In composition difference between the base layer 104 and the collector layer 103 should be 0.05 or more.
  • the base layer 104 includes a p-base layer 104a made of p-type InGaN at the center in the thickness direction.
  • An upper base layer 104c above the p base layer 104a and a lower base layer 104b below the p base layer 104a are undoped or p-type with an impurity concentration lower than that of the p base layer 104a.
  • the In composition of these three layers is set smaller than that of the collector layer 103 as described above.
  • Other configurations are the same as those of the first embodiment described above, and description thereof is omitted.
  • the minimum doping concentration of the entire base layer 104 made of InGaN is fixed by the doping of the p base layer 104a.
  • the thickness of the base layer 104 is increased, it is possible to prevent an increase in resistance and a decrease in hole concentration.
  • a collector contact layer 132 formed on a substrate 131 and a collector layer 133 formed on the V-group polar plane side of the collector contact layer 132 are provided.
  • This HBT also includes a base layer 134 formed in contact with the group V polarity surface of the collector layer 133, an emitter layer 135 formed in contact with the group V polarity surface of the base layer 134, and a group V layer of the emitter layer 135. and an emitter contact layer 136 formed on the side of the polar surface.
  • This HBT also includes an emitter electrode 141 connected to the emitter contact layer 136, a base electrode 142 formed on the base layer 134, and a collector electrode 143 connected to the collector contact layer.
  • emitter contact layer 136, emitter layer 135, base layer 134, collector layer 133, and collector contact layer 132 are formed on buffer layer 137 as viewed from substrate 131, and the main surface is The layers are laminated in the state of the group III polar plane.
  • the collector layer 133 and the collector contact layer 132 are formed in a mesa shape, and the base electrode 142 is formed on and in contact with the base layer 134 on the sides of the collector layer 133 .
  • two-dimensional hole gas 121 is generated and good ohmic contact between the base layer 134 and the base electrode 142 is achieved as in the first and second embodiments. can be obtained.
  • the base layer 134 is made of InGaN with an In composition smaller than that of the collector layer 133 .
  • two-dimensional hole gas 121 can be generated in the collector layer 133 near the interface between the collector layer 133 and the base layer 134 by the polarized electric field.
  • the collector contact layer 132 can be composed of a highly n-type doped nitride semiconductor (GaN or InGaN).
  • the collector contact layer 132 can be composed of heavily n-doped GaN.
  • the doping concentration of the collector contact layer 132 is set to a relatively high concentration (for example, 5 ⁇ 10 18 cm ⁇ 3 or more) in order to achieve ohmic contact with the collector electrode 143 .
  • the collector contact layer 132 corresponds to the subcollector layer 102 of the HBT according to the first embodiment.
  • the collector layer 133 is composed of InxGa1 -xN (0 ⁇ x ⁇ 1).
  • the doping concentration for making the InGaN forming the collector layer 133 n-type is set lower than that of the collector contact layer 132, for example.
  • the collector layer 133 can be made of n-type InGaN with an n-type impurity concentration of about 10 17 cm ⁇ 3 .
  • the collector layer 133 can be made of InGaN having an In composition 0.05 or more larger than that of InGaN forming the base layer 134 .
  • the base layer 134 can be made of InGaN with an In composition of 0.1 or more. Note that the base layer 134 can have a thickness of, for example, about 4 nm.
  • the emitter layer 135 is made of InGaN or GaN with a smaller In composition than that of the base layer 134 .
  • the In composition is varied, two-dimensional hole gas 121 can be generated in the base layer 134 near the interface between the base layer 134 and the emitter layer 135 by the polarization effect.
  • the emitter layer 135 has a bandgap larger than that of the base layer 134, reverse injection of holes to the emitter side can be suppressed, and the current gain can be increased.
  • the emitter contact layer 136 is made of an n-type nitride semiconductor.
  • the emitter contact layer 136 is a layer for forming an ohmic contact with a low contact resistance, and has a high n-type impurity concentration.
  • the emitter contact layer 136 can have an n-type impurity concentration of 5 ⁇ 10 18 cm ⁇ 3 or more. In this layer, it is effective to increase the impurity concentration and narrow the bandgap for ohmic contact with the metal. Therefore, the emitter contact layer 136 is not limited to GaN, but can be made of InGaN or the like.
  • the third embodiment has a collector top (collector up) structure.
  • a collector electrode 143 is formed on the collector contact layer 132 and an emitter electrode 141 is formed on the emitter contact layer 136 around the emitter layer 135 . Since the collector layer 133 for obtaining the breakdown voltage is arranged on the upper layer of the element, it is desirable to form passivation or the like covering the periphery of the element part as necessary so as not to cause a reduction in the breakdown voltage.
  • the collector layer is composed of InGaN
  • the base layer is composed of InGaN having an In composition smaller than that of the collector layer
  • the emitter layer is composed of the base layer and the In composition of the base layer.

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PCT/JP2021/046506 2021-12-16 2021-12-16 ヘテロ接合バイポーラトランジスタ Ceased WO2023112252A1 (ja)

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Citations (3)

* Cited by examiner, † Cited by third party
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JP2005183936A (ja) * 2003-11-28 2005-07-07 Sharp Corp バイポーラトランジスタ
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