JP7740373B2 - ヘテロ接合バイポーラトランジスタ - Google Patents

ヘテロ接合バイポーラトランジスタ

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Publication number
JP7740373B2
JP7740373B2 JP2023567431A JP2023567431A JP7740373B2 JP 7740373 B2 JP7740373 B2 JP 7740373B2 JP 2023567431 A JP2023567431 A JP 2023567431A JP 2023567431 A JP2023567431 A JP 2023567431A JP 7740373 B2 JP7740373 B2 JP 7740373B2
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JP
Japan
Prior art keywords
layer
emitter
collector
base layer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023567431A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023112252A1 (https=
Inventor
拓也 星
悠太 白鳥
弘樹 杉山
佑樹 吉屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
NTT Inc USA
Original Assignee
Nippon Telegraph and Telephone Corp
NTT Inc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, NTT Inc USA filed Critical Nippon Telegraph and Telephone Corp
Publication of JPWO2023112252A1 publication Critical patent/JPWO2023112252A1/ja
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Publication of JP7740373B2 publication Critical patent/JP7740373B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs

Landscapes

  • Bipolar Transistors (AREA)
JP2023567431A 2021-12-16 2021-12-16 ヘテロ接合バイポーラトランジスタ Active JP7740373B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/046506 WO2023112252A1 (ja) 2021-12-16 2021-12-16 ヘテロ接合バイポーラトランジスタ

Publications (2)

Publication Number Publication Date
JPWO2023112252A1 JPWO2023112252A1 (https=) 2023-06-22
JP7740373B2 true JP7740373B2 (ja) 2025-09-17

Family

ID=86773839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023567431A Active JP7740373B2 (ja) 2021-12-16 2021-12-16 ヘテロ接合バイポーラトランジスタ

Country Status (2)

Country Link
JP (1) JP7740373B2 (https=)
WO (1) WO2023112252A1 (https=)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059938A (ja) 2001-06-07 2003-02-28 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体積層体及びその半導体素子
WO2004061971A1 (ja) 2003-01-06 2004-07-22 Nippon Telegraph And Telephone Corporation ｐ型窒化物半導体構造及びバイポーラトランジスタ
JP2005183936A (ja) 2003-11-28 2005-07-07 Sharp Corp バイポーラトランジスタ
JP2007142365A (ja) 2005-11-22 2007-06-07 National Central Univ ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法
WO2021214932A1 (ja) 2020-04-23 2021-10-28 日本電信電話株式会社 半導体装置およびその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003059938A (ja) 2001-06-07 2003-02-28 Nippon Telegr & Teleph Corp <Ntt> 窒化物半導体積層体及びその半導体素子
WO2004061971A1 (ja) 2003-01-06 2004-07-22 Nippon Telegraph And Telephone Corporation ｐ型窒化物半導体構造及びバイポーラトランジスタ
JP2005183936A (ja) 2003-11-28 2005-07-07 Sharp Corp バイポーラトランジスタ
JP2007142365A (ja) 2005-11-22 2007-06-07 National Central Univ ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法
WO2021214932A1 (ja) 2020-04-23 2021-10-28 日本電信電話株式会社 半導体装置およびその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
隈部岳瑠ほか，エピタキシャルリフトオフ法によって作製された二次元正孔ガスを有するエミッタトップ型ＧａＮ－ＨＢＴ，第８０回応用物理学会秋季学術講演会［講演予稿集］，公益社団法人応用物理学会，2019年09月04日，12-395

Also Published As

Publication number Publication date
WO2023112252A1 (ja) 2023-06-22
JPWO2023112252A1 (https=) 2023-06-22

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