JPWO2023112252A1 - - Google Patents
Info
- Publication number
- JPWO2023112252A1 JPWO2023112252A1 JP2023567431A JP2023567431A JPWO2023112252A1 JP WO2023112252 A1 JPWO2023112252 A1 JP WO2023112252A1 JP 2023567431 A JP2023567431 A JP 2023567431A JP 2023567431 A JP2023567431 A JP 2023567431A JP WO2023112252 A1 JPWO2023112252 A1 JP WO2023112252A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/046506 WO2023112252A1 (ja) | 2021-12-16 | 2021-12-16 | ヘテロ接合バイポーラトランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023112252A1 true JPWO2023112252A1 (https=) | 2023-06-22 |
| JP7740373B2 JP7740373B2 (ja) | 2025-09-17 |
Family
ID=86773839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023567431A Active JP7740373B2 (ja) | 2021-12-16 | 2021-12-16 | ヘテロ接合バイポーラトランジスタ |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7740373B2 (https=) |
| WO (1) | WO2023112252A1 (https=) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003059938A (ja) * | 2001-06-07 | 2003-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体積層体及びその半導体素子 |
| WO2004061971A1 (ja) * | 2003-01-06 | 2004-07-22 | Nippon Telegraph And Telephone Corporation | ｐ型窒化物半導体構造及びバイポーラトランジスタ |
| JP2005183936A (ja) * | 2003-11-28 | 2005-07-07 | Sharp Corp | バイポーラトランジスタ |
| JP2007142365A (ja) * | 2005-11-22 | 2007-06-07 | National Central Univ | ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法 |
| WO2021214932A1 (ja) * | 2020-04-23 | 2021-10-28 | 日本電信電話株式会社 | 半導体装置およびその製造方法 |
-
2021
- 2021-12-16 JP JP2023567431A patent/JP7740373B2/ja active Active
- 2021-12-16 WO PCT/JP2021/046506 patent/WO2023112252A1/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003059938A (ja) * | 2001-06-07 | 2003-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 窒化物半導体積層体及びその半導体素子 |
| WO2004061971A1 (ja) * | 2003-01-06 | 2004-07-22 | Nippon Telegraph And Telephone Corporation | ｐ型窒化物半導体構造及びバイポーラトランジスタ |
| JP2005183936A (ja) * | 2003-11-28 | 2005-07-07 | Sharp Corp | バイポーラトランジスタ |
| JP2007142365A (ja) * | 2005-11-22 | 2007-06-07 | National Central Univ | ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法 |
| WO2021214932A1 (ja) * | 2020-04-23 | 2021-10-28 | 日本電信電話株式会社 | 半導体装置およびその製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| 隈部岳瑠ほか: "エピタキシャルリフトオフ法によって作製された二次元正孔ガスを有するエミッタトップ型ＧａＮ−ＨＢＴ", 第８０回応用物理学会秋季学術講演会［講演予稿集］, JPN6022005961, 4 September 2019 (2019-09-04), pages 12 - 395, ISSN: 0005597858 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023112252A1 (ja) | 2023-06-22 |
| JP7740373B2 (ja) | 2025-09-17 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240529 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250520 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250603 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250805 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250818 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7740373 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |