JPWO2021214932A1 - - Google Patents
Info
- Publication number
- JPWO2021214932A1 JPWO2021214932A1 JP2022516570A JP2022516570A JPWO2021214932A1 JP WO2021214932 A1 JPWO2021214932 A1 JP WO2021214932A1 JP 2022516570 A JP2022516570 A JP 2022516570A JP 2022516570 A JP2022516570 A JP 2022516570A JP WO2021214932 A1 JPWO2021214932 A1 JP WO2021214932A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/841—Vertical heterojunction BJTs having a two-dimensional base, e.g. modulation-doped base, inversion layer base or delta-doped base
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2020/017453 WO2021214932A1 (ja) | 2020-04-23 | 2020-04-23 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021214932A1 true JPWO2021214932A1 (https=) | 2021-10-28 |
| JP7298779B2 JP7298779B2 (ja) | 2023-06-27 |
Family
ID=78270510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022516570A Active JP7298779B2 (ja) | 2020-04-23 | 2020-04-23 | 半導体装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230207661A1 (https=) |
| JP (1) | JP7298779B2 (https=) |
| WO (1) | WO2021214932A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102944587B1 (ko) * | 2021-06-25 | 2026-03-25 | 삼성전자주식회사 | 고전자이동도 트랜지스터 및 그 제조 방법 |
| JP7740373B2 (ja) * | 2021-12-16 | 2025-09-17 | Ｎｔｔ株式会社 | ヘテロ接合バイポーラトランジスタ |
| TR2022006355A2 (tr) * | 2022-04-20 | 2022-06-21 | Antalya Bilim Ueniversitesi | İki̇ boyutlu deşi̇k gazi i̇çeren ve g-modunda çalişabi̇len transi̇stör aygit yapisi |
| JP7765368B2 (ja) * | 2022-09-16 | 2025-11-06 | 株式会社東芝 | 半導体装置 |
| JPWO2024116263A1 (https=) * | 2022-11-29 | 2024-06-06 | ||
| FR3160267A1 (fr) * | 2024-03-15 | 2025-09-19 | Soitec | Procédé de fabrication d’une structure verticale de nitrure de gallium et d’un dispositif basé sur cette structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007142365A (ja) * | 2005-11-22 | 2007-06-07 | National Central Univ | ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法 |
| JP2008016615A (ja) * | 2006-07-05 | 2008-01-24 | Matsushita Electric Ind Co Ltd | バイポーラトランジスタ |
| US20140264380A1 (en) * | 2013-03-15 | 2014-09-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material |
| JP2017139338A (ja) * | 2016-02-04 | 2017-08-10 | 株式会社パウデック | ヘテロ接合バイポーラトランジスタおよび電気機器 |
| JP2018046168A (ja) * | 2016-09-15 | 2018-03-22 | 株式会社東芝 | 半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8174048B2 (en) * | 2004-01-23 | 2012-05-08 | International Rectifier Corporation | III-nitride current control device and method of manufacture |
| JP2008004779A (ja) * | 2006-06-23 | 2008-01-10 | Matsushita Electric Ind Co Ltd | 窒化物半導体バイポーラトランジスタ及び窒化物半導体バイポーラトランジスタの製造方法 |
| JP2011204717A (ja) * | 2010-03-24 | 2011-10-13 | Sanken Electric Co Ltd | 化合物半導体装置 |
| JP6242678B2 (ja) * | 2013-12-25 | 2017-12-06 | 住友化学株式会社 | 窒化物半導体素子及びその製造方法 |
-
2020
- 2020-04-23 JP JP2022516570A patent/JP7298779B2/ja active Active
- 2020-04-23 US US17/920,479 patent/US20230207661A1/en active Pending
- 2020-04-23 WO PCT/JP2020/017453 patent/WO2021214932A1/ja not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007142365A (ja) * | 2005-11-22 | 2007-06-07 | National Central Univ | ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法 |
| JP2008016615A (ja) * | 2006-07-05 | 2008-01-24 | Matsushita Electric Ind Co Ltd | バイポーラトランジスタ |
| US20140264380A1 (en) * | 2013-03-15 | 2014-09-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material |
| JP2017139338A (ja) * | 2016-02-04 | 2017-08-10 | 株式会社パウデック | ヘテロ接合バイポーラトランジスタおよび電気機器 |
| JP2018046168A (ja) * | 2016-09-15 | 2018-03-22 | 株式会社東芝 | 半導体装置 |
Non-Patent Citations (2)
| Title |
|---|
| HO, JIN-KUO ET AL.: "Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au film", JOURNAL OF APPLIED PHYSICS, vol. 86, no. 8, JPN7023001708, 15 October 1999 (1999-10-15), US, pages 4491 - 4497, XP012048827, ISSN: 0005059708, DOI: 10.1063/1.371392 * |
| 安藤 悠人 他: "2次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製", 第64回応用物理学会春季学術講演会 講演予稿集, JPN6023017864, 5 September 2017 (2017-09-05), JP, pages 315 - 7, ISSN: 0005059709 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7298779B2 (ja) | 2023-06-27 |
| US20230207661A1 (en) | 2023-06-29 |
| WO2021214932A1 (ja) | 2021-10-28 |
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