JPWO2021214932A1 - - Google Patents

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Publication number
JPWO2021214932A1
JPWO2021214932A1 JP2022516570A JP2022516570A JPWO2021214932A1 JP WO2021214932 A1 JPWO2021214932 A1 JP WO2021214932A1 JP 2022516570 A JP2022516570 A JP 2022516570A JP 2022516570 A JP2022516570 A JP 2022516570A JP WO2021214932 A1 JPWO2021214932 A1 JP WO2021214932A1
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JP
Japan
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Granted
Application number
JP2022516570A
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JP7298779B2 (ja
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Publication of JPWO2021214932A1 publication Critical patent/JPWO2021214932A1/ja
Application granted granted Critical
Publication of JP7298779B2 publication Critical patent/JP7298779B2/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
    • H01L29/66318—Heterojunction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7373—Vertical transistors having a two-dimensional base, e.g. modulation-doped base, inversion layer base, delta-doped base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2022516570A 2020-04-23 2020-04-23 半導体装置およびその製造方法 Active JP7298779B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/017453 WO2021214932A1 (ja) 2020-04-23 2020-04-23 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPWO2021214932A1 true JPWO2021214932A1 (ja) 2021-10-28
JP7298779B2 JP7298779B2 (ja) 2023-06-27

Family

ID=78270510

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022516570A Active JP7298779B2 (ja) 2020-04-23 2020-04-23 半導体装置およびその製造方法

Country Status (3)

Country Link
US (1) US20230207661A1 (ja)
JP (1) JP7298779B2 (ja)
WO (1) WO2021214932A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230000718A (ko) * 2021-06-25 2023-01-03 삼성전자주식회사 고전자이동도 트랜지스터 및 그 제조 방법
WO2023112252A1 (ja) * 2021-12-16 2023-06-22 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ
TR2022006355A2 (tr) * 2022-04-20 2022-06-21 Antalya Bilim Ueniversitesi İki̇ boyutlu deşi̇k gazi i̇çeren ve g-modunda çalişabi̇len transi̇stör aygit yapisi
WO2024116263A1 (ja) * 2022-11-29 2024-06-06 日本電信電話株式会社 ヘテロ接合バイポーラトランジスタ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142365A (ja) * 2005-11-22 2007-06-07 National Central Univ ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法
JP2008016615A (ja) * 2006-07-05 2008-01-24 Matsushita Electric Ind Co Ltd バイポーラトランジスタ
US20140264380A1 (en) * 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material
JP2017139338A (ja) * 2016-02-04 2017-08-10 株式会社パウデック ヘテロ接合バイポーラトランジスタおよび電気機器
JP2018046168A (ja) * 2016-09-15 2018-03-22 株式会社東芝 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142365A (ja) * 2005-11-22 2007-06-07 National Central Univ ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法
JP2008016615A (ja) * 2006-07-05 2008-01-24 Matsushita Electric Ind Co Ltd バイポーラトランジスタ
US20140264380A1 (en) * 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material
JP2017139338A (ja) * 2016-02-04 2017-08-10 株式会社パウデック ヘテロ接合バイポーラトランジスタおよび電気機器
JP2018046168A (ja) * 2016-09-15 2018-03-22 株式会社東芝 半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HO, JIN-KUO ET AL.: "Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au film", JOURNAL OF APPLIED PHYSICS, vol. 86, no. 8, JPN7023001708, 15 October 1999 (1999-10-15), US, pages 4491 - 4497, XP012048827, ISSN: 0005059708, DOI: 10.1063/1.371392 *
安藤 悠人 他: "2次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製", 第64回応用物理学会春季学術講演会 講演予稿集, JPN6023017864, 5 September 2017 (2017-09-05), JP, pages 315 - 7, ISSN: 0005059709 *

Also Published As

Publication number Publication date
JP7298779B2 (ja) 2023-06-27
WO2021214932A1 (ja) 2021-10-28
US20230207661A1 (en) 2023-06-29

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