JP7298779B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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JP7298779B2
JP7298779B2 JP2022516570A JP2022516570A JP7298779B2 JP 7298779 B2 JP7298779 B2 JP 7298779B2 JP 2022516570 A JP2022516570 A JP 2022516570A JP 2022516570 A JP2022516570 A JP 2022516570A JP 7298779 B2 JP7298779 B2 JP 7298779B2
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layer
electrode
gan
emitter
algan
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Japanese (ja)
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JPWO2021214932A1 (https=
Inventor
拓也 星
佑樹 吉屋
悠太 白鳥
弘樹 杉山
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NTT Inc
NTT Inc USA
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Nippon Telegraph and Telephone Corp
NTT Inc USA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/841—Vertical heterojunction BJTs having a two-dimensional base, e.g. modulation-doped base, inversion layer base or delta-doped base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2022516570A 2020-04-23 2020-04-23 半導体装置およびその製造方法 Active JP7298779B2 (ja)

Applications Claiming Priority (1)

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PCT/JP2020/017453 WO2021214932A1 (ja) 2020-04-23 2020-04-23 半導体装置およびその製造方法

Publications (2)

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JPWO2021214932A1 JPWO2021214932A1 (https=) 2021-10-28
JP7298779B2 true JP7298779B2 (ja) 2023-06-27

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US (1) US20230207661A1 (https=)
JP (1) JP7298779B2 (https=)
WO (1) WO2021214932A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102944587B1 (ko) * 2021-06-25 2026-03-25 삼성전자주식회사 고전자이동도 트랜지스터 및 그 제조 방법
JP7740373B2 (ja) * 2021-12-16 2025-09-17 Ｎｔｔ株式会社 ヘテロ接合バイポーラトランジスタ
TR2022006355A2 (tr) * 2022-04-20 2022-06-21 Antalya Bilim Ueniversitesi İki̇ boyutlu deşi̇k gazi i̇çeren ve g-modunda çalişabi̇len transi̇stör aygit yapisi
JP7765368B2 (ja) * 2022-09-16 2025-11-06 株式会社東芝 半導体装置
JPWO2024116263A1 (https=) * 2022-11-29 2024-06-06
FR3160267A1 (fr) * 2024-03-15 2025-09-19 Soitec Procédé de fabrication d’une structure verticale de nitrure de gallium et d’un dispositif basé sur cette structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142365A (ja) 2005-11-22 2007-06-07 National Central Univ ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法
JP2008016615A (ja) 2006-07-05 2008-01-24 Matsushita Electric Ind Co Ltd バイポーラトランジスタ
US20140264380A1 (en) 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material
JP2017139338A (ja) 2016-02-04 2017-08-10 株式会社パウデック ヘテロ接合バイポーラトランジスタおよび電気機器
JP2018046168A (ja) 2016-09-15 2018-03-22 株式会社東芝 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8174048B2 (en) * 2004-01-23 2012-05-08 International Rectifier Corporation III-nitride current control device and method of manufacture
JP2008004779A (ja) * 2006-06-23 2008-01-10 Matsushita Electric Ind Co Ltd 窒化物半導体バイポーラトランジスタ及び窒化物半導体バイポーラトランジスタの製造方法
JP2011204717A (ja) * 2010-03-24 2011-10-13 Sanken Electric Co Ltd 化合物半導体装置
JP6242678B2 (ja) * 2013-12-25 2017-12-06 住友化学株式会社 窒化物半導体素子及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007142365A (ja) 2005-11-22 2007-06-07 National Central Univ ｐ型ひずみＩｎＧａＮベース層を有するＧａＮヘテロ接合バイポーラトランジスタとその製造方法
JP2008016615A (ja) 2006-07-05 2008-01-24 Matsushita Electric Ind Co Ltd バイポーラトランジスタ
US20140264380A1 (en) 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Complementary Field Effect Transistors Using Gallium Polar and Nitrogen Polar III-Nitride Material
JP2017139338A (ja) 2016-02-04 2017-08-10 株式会社パウデック ヘテロ接合バイポーラトランジスタおよび電気機器
JP2018046168A (ja) 2016-09-15 2018-03-22 株式会社東芝 半導体装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HO, Jin-Kuo et al.，Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au film，Journal of Applied Physics，Vol.86, No.8，米国，American Institute of Physics，1999年10月15日，pp.4491-4497
安藤 悠人 他，2次元正孔ガスを用いたコレクタトップ縦型GaN-HBTの作製，第64回応用物理学会春季学術講演会 講演予稿集，日本，応用物理学会，2017年09月05日，15a-315-7

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US20230207661A1 (en) 2023-06-29
WO2021214932A1 (ja) 2021-10-28

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