WO2023100887A1 - 半導体発光装置および半導体発光ユニット - Google Patents

半導体発光装置および半導体発光ユニット Download PDF

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Publication number
WO2023100887A1
WO2023100887A1 PCT/JP2022/044005 JP2022044005W WO2023100887A1 WO 2023100887 A1 WO2023100887 A1 WO 2023100887A1 JP 2022044005 W JP2022044005 W JP 2022044005W WO 2023100887 A1 WO2023100887 A1 WO 2023100887A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
semiconductor light
light emitting
wiring
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/044005
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English (en)
French (fr)
Japanese (ja)
Inventor
晃輝 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2023565019A priority Critical patent/JPWO2023100887A1/ja
Publication of WO2023100887A1 publication Critical patent/WO2023100887A1/ja
Priority to US18/672,653 priority patent/US20240313501A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC

Definitions

  • FIG. 9 is a circuit diagram of a laser system including the semiconductor light emitting device of the first embodiment.
  • FIG. 10 is a graph showing the results of heat conduction analysis for the semiconductor light emitting device of the comparative example when the thickness of the substrate is 0.3 mm.
  • FIG. 11 is a graph showing the results of heat conduction analysis for the semiconductor light emitting device of Comparative Example when the thickness of the substrate is 0.6 mm.
  • FIG. 12 is a graph showing the results of heat conduction analysis for the semiconductor light emitting device of the comparative example when the thickness of the substrate is 0.8 mm.
  • FIG. 13 is a graph showing a thermal conductivity analysis result for the semiconductor light emitting device of the first embodiment when the thickness of the substrate is 0.3 mm.
  • FIG. 10 is a graph showing the results of heat conduction analysis for the semiconductor light emitting device of the comparative example when the thickness of the substrate is 0.3 mm.
  • FIG. 11 is a graph showing the results of heat conduction analysis for the semiconductor light emitting device of Compar
  • the sealing resin 80 is arranged closer to the device front surface 11 than the device back surface 12 of the semiconductor light emitting device 10A.
  • the sealing resin 80 constitutes the device front surface 11 and a part of each of the first to fourth device side surfaces 13 to 16 in the z direction.
  • first sealing side 83 is flush with the first substrate side 23
  • second sealing side 84 is flush with the second substrate side 24
  • third sealing side 85 is flush with the third substrate side 24 . It is flush with the substrate side surface 25 and the fourth sealing side surface 86 is flush with the fourth substrate side surface 26 .
  • the size of the third surface-side wiring 33 in the y-direction is equal to the size of the fourth surface-side wiring 34 in the y-direction.
  • the difference between the y-direction size of the third surface-side wiring 33 and the y-direction size of the fourth surface-side wiring 34 is, for example, within 10% of the y-direction size of the third surface-side wiring 33
  • the size of the third surface wiring 33 in the y direction is equal to the size of the fourth surface wiring 34 in the y direction.
  • the size of each of the third surface-side wiring 33 and the fourth surface-side wiring 34 in the y-direction is smaller than the size of the second surface-side wiring 32 in the y-direction.
  • the end face through holes 51A and 51B are provided at positions different from the position overlapping the semiconductor light emitting element 60 when viewed from the y direction. More specifically, when viewed from the z-direction, the two end face through-holes 51A are arranged dispersedly on both sides of the semiconductor light-emitting element 60 in the x-direction. When viewed from the z direction, each end face through hole 51A is provided at a position adjacent to the semiconductor light emitting element 60 in the x direction. In this embodiment, the x-direction distance DPH between the end face through hole 51A and the semiconductor light emitting element 60 is smaller than the opening width of the end face through hole 51A (opening width W of the end face through hole 51).
  • the first internal through holes 54 are provided closer to the second substrate side surface 24 than the end face through holes 51A and 51B.
  • the first internal through hole 54 is provided between the two end face through holes 51A in the x direction.
  • the end face through holes 52A and the end face through holes 52B have the same shape and size. Moreover, in the present embodiment, the end face through holes 52A and 52B have the same shape and size as the end face through holes 51A and 51B.
  • the second electrode 71B of the switching element 71 is electrically connected to the third surface wiring 33 (the third rear surface wiring 43).
  • the anode electrode of the diode D is electrically connected to the first backside wiring 41 (first front side wiring 31), and the cathode electrode of the diode D is connected to the third backside wiring 43 (third front side wiring 33). electrically connected. Thereby, the diode D is connected in antiparallel to the semiconductor light emitting element 60 .
  • a semiconductor light emitting device of a comparative example is a semiconductor light emitting device 10A in which the end face through holes 51 (51A, 51B), 52A, 52B are omitted.
  • the layout and electrical connection of the semiconductor light emitting element 60, the switching element 71, and the capacitors 72 and 73 of the semiconductor light emitting device 10B are the same as those of the semiconductor light emitting device 10A of the first embodiment.
  • a surface side insulating layer 144 is provided on the substrate surface 21 of the substrate 20 .
  • the surface-side insulating layer 144 is formed to cover the entire substrate surface 21 . That is, the surface-side insulating layer 144 covers the surface-side wiring 140 .
  • openings exposing the surface-side wiring 140 are provided in the surface-side insulating layer 144 at locations where the semiconductor light-emitting element 60, the switching element 71, and the capacitors 72 and 73 are mounted.
  • the surface-side insulating layer 144 is made of an insulating material such as silicon dioxide (SiO 2 ).
  • the first to third internal through holes 161 to 163 are made of a conductive material (Cu in this embodiment). As shown in FIGS. 23 and 24, a heat dissipation material 164 is embedded inside the first to third internal through holes 161 to 163 . A heat dissipation material 164 is provided so as to fill the insides of the first to third internal through holes 161 to 163 .
  • Heat dissipation material 164 is made of, for example, a metal material. An example of a metallic material is Cu. That is, the heat dissipation material 164 may be made of the same material as the first to third internal through holes 161-164.
  • the number of each of the first to third internal through holes 161 to 163 can be changed arbitrarily.
  • the shape of each of the first to third internal through holes 161 to 163 as viewed from the z direction can be changed arbitrarily.
  • the shapes of the first to third internal through holes 161 to 163 viewed from the y direction may differ from each other.
  • the size of each of the first to third internal through holes 161 to 163 can be changed arbitrarily.
  • the sizes of the first through third internal through holes 161-163 may differ from each other.
  • the second wire W2 connects the end of the second electrode 71B (source electrode) of the switching element 71 in the z direction, which is closer to the lead pin 104A, and the connection portion 106A of the lead pin 104A. Connected. Thereby, the second electrode 71B of the switching element 71 and the lead pin 104A are electrically connected. Therefore, it can be said that the terminal portion 107A of the lead pin 104A constitutes a source terminal.
  • the fourth wire W4 connects the external connection wiring 143 and the connection portion 106C of the lead pin 104C.
  • the external connection wiring 143 is electrically connected to the second electrode 65 (cathode electrode) of the semiconductor light emitting element 60 via the third internal through-hole 163 , the first rear wiring 151 and the first front wiring 141 . there is Therefore, it can be said that the terminal portion 107C of the lead pin 104C constitutes a cathode terminal.
  • the intermediate wiring 300 has a first intermediate wiring 301, a second intermediate wiring 302, a third intermediate wiring 303, and a fourth intermediate wiring 304.
  • the first to fourth intermediate wirings 301 to 304 have the same shape as the first to fourth back side wirings 41 to 44 .
  • the first intermediate wiring 301 is provided at a position overlapping both the first rear surface wiring 41 and the first front surface wiring 31 when viewed in the z direction.
  • the second intermediate wiring 302 is provided at a position overlapping the second rear surface side wiring 42 when viewed in the z direction.
  • the third intermediate wiring 303 is provided at a position overlapping with both the third rear wiring 43 and the third front wiring 33 when viewed in the z direction.
  • the fourth intermediate wiring 304 is arranged at a position overlapping both the fourth rear surface wiring 44 and the fourth front surface wiring 34 when viewed in the z direction.
  • the shape of the fifth internal through-hole 310 viewed from the z-direction is circular.
  • the diameter of the fifth internal through hole 310 is equal to the diameters of the first through fourth internal through holes 54-57.
  • the maximum value of the difference between the diameter of the fifth internal through-hole 310 and the diameters of the first to fourth internal through-holes 54 to 57 is within 10% of the diameter of the fifth internal through-hole 310, the fifth internal through-hole 310 It can be said that the diameter of the internal through-hole 310 is equal to the diameter of the first to fourth internal through-holes 54-57.
  • end surface through holes 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51A, 51B is provided on the first substrate side surface 23 of the substrate 20.
  • end face through holes 51A and 51B penetrate both the front substrate 20A and the back substrate 20B in the z-direction, which is the thickness direction of the substrate 20, and extend through the first front wiring 31 and the first intermediate wiring. 301, and the first backside wiring 41 are connected.
  • the number of paths through which the heat of the semiconductor light emitting element 60 is released to the outside of the substrate 20 is increased by the end surface through holes 51C and 51D, so that the heat dissipation of the semiconductor light emitting device 10A can be further improved.
  • the volume of the heat transfer path for transferring heat from the semiconductor light emitting element 60 to the outside of the semiconductor light emitting device 10A can be increased by the heat dissipating material 59 embedded in the end face through holes 51C and 51D. Heat dissipation can be further improved.
  • the light emitting element control circuit 70 may be omitted.
  • the semiconductor light emitting devices 10A to 10C may include at least one of the diode D, the current limiting resistor R, and the driver circuit PM.
  • the light emitting element control circuit (70) has a switching element (71) for controlling current supplied to the semiconductor light emitting element (60),
  • the surface-side wiring (30) is a first surface wiring (31) on which the semiconductor light emitting device (60) is mounted; a second surface wiring (32) on which the switching element (71) is mounted; has
  • the backside wiring (40) is a first rear surface wiring (41) arranged at a position overlapping with the first surface wiring (31) when viewed from the thickness direction (z direction) of the substrate (20); a second rear surface wiring (42) arranged at a position overlapping with the second surface wiring (32) when viewed from the thickness direction (z direction) of the substrate (20); has The capacitor is connected between the first surface wiring (31) and the second surface wiring (32), 16.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
PCT/JP2022/044005 2021-11-30 2022-11-29 半導体発光装置および半導体発光ユニット Ceased WO2023100887A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023565019A JPWO2023100887A1 (https=) 2021-11-30 2022-11-29
US18/672,653 US20240313501A1 (en) 2021-11-30 2024-05-23 Semiconductor light emitting device and semiconductor light emitting unit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-194116 2021-11-30
JP2021194116 2021-11-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/672,653 Continuation US20240313501A1 (en) 2021-11-30 2024-05-23 Semiconductor light emitting device and semiconductor light emitting unit

Publications (1)

Publication Number Publication Date
WO2023100887A1 true WO2023100887A1 (ja) 2023-06-08

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PCT/JP2022/044005 Ceased WO2023100887A1 (ja) 2021-11-30 2022-11-29 半導体発光装置および半導体発光ユニット

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025028177A1 (ja) * 2023-07-28 2025-02-06 ローム株式会社 半導体発光装置
WO2025028178A1 (ja) * 2023-07-28 2025-02-06 ローム株式会社 半導体発光装置
WO2025216136A1 (ja) * 2024-04-11 2025-10-16 ローム株式会社 発光装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005332983A (ja) * 2004-05-20 2005-12-02 Citizen Electronics Co Ltd 光半導体パッケージ及びその製造方法
JP2012160527A (ja) * 2011-01-31 2012-08-23 Hitachi Cable Ltd 光電変換モジュール及び光電変換モジュールの製造方法
US20180278011A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module
WO2021014917A1 (ja) * 2019-07-23 2021-01-28 ローム株式会社 半導体レーザ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005332983A (ja) * 2004-05-20 2005-12-02 Citizen Electronics Co Ltd 光半導体パッケージ及びその製造方法
JP2012160527A (ja) * 2011-01-31 2012-08-23 Hitachi Cable Ltd 光電変換モジュール及び光電変換モジュールの製造方法
US20180278011A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module
WO2021014917A1 (ja) * 2019-07-23 2021-01-28 ローム株式会社 半導体レーザ装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025028177A1 (ja) * 2023-07-28 2025-02-06 ローム株式会社 半導体発光装置
WO2025028178A1 (ja) * 2023-07-28 2025-02-06 ローム株式会社 半導体発光装置
WO2025216136A1 (ja) * 2024-04-11 2025-10-16 ローム株式会社 発光装置

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US20240313501A1 (en) 2024-09-19
JPWO2023100887A1 (https=) 2023-06-08

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