WO2023077915A1 - 一种绝缘胶、绝缘胶带及绝缘胶的制备方法 - Google Patents

一种绝缘胶、绝缘胶带及绝缘胶的制备方法 Download PDF

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Publication number
WO2023077915A1
WO2023077915A1 PCT/CN2022/113735 CN2022113735W WO2023077915A1 WO 2023077915 A1 WO2023077915 A1 WO 2023077915A1 CN 2022113735 W CN2022113735 W CN 2022113735W WO 2023077915 A1 WO2023077915 A1 WO 2023077915A1
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WIPO (PCT)
Prior art keywords
insulating
particles
colloid
glue
insulating particles
Prior art date
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PCT/CN2022/113735
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English (en)
French (fr)
Inventor
张桐恺
高静
孟胤
雷奋星
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荣耀终端有限公司
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Application filed by 荣耀终端有限公司 filed Critical 荣耀终端有限公司
Priority to EP22888948.1A priority Critical patent/EP4357433A1/en
Publication of WO2023077915A1 publication Critical patent/WO2023077915A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B17/00—Details of cameras or camera bodies; Accessories therefor
    • G03B17/02—Bodies
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00—Presence of inorganic and organic materials
    • C09J2400/20—Presence of organic materials
    • C09J2400/24—Presence of a foam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Definitions

  • the embodiments of the present application relate to the technical field of insulating glue, and in particular to an insulating glue, an insulating tape, and a method for preparing the insulating glue.
  • insulating tape is usually used for bonding to block the gap.
  • the insulating tape usually consists of an insulating film and an insulating glue layer stuck on the insulating film.
  • the insulating adhesive layer needs to be doped with viscous substances, so that its insulating property is lower than that of the insulating film and becomes an insulating weak area.
  • ESD electrostatic discharge
  • the embodiment of the present application provides an insulating glue, an insulating tape and a preparation method of the insulating glue, which are used to solve the problem in the prior art that the insulating performance of the insulating glue layer in the direction of the bonding surface cannot be effectively guaranteed.
  • an insulating glue in a first aspect, includes: insulating glue and insulating particles doped in the insulating glue. Wherein, the breakdown field strength of the insulating particles is greater than that of the insulating colloid, and the insulating particles are highly electronegative non-polar insulating particles.
  • the insulating colloid is easier to break down than the insulating particles.
  • the ESD current acts on the insulating glue, the ESD current will break down the insulating glue with worse insulation performance and easier breakdown, and bypass the insulating particles with better insulation performance and more difficult breakdown, so that the breakdown of the ESD current As the path becomes longer, the breakdown voltage required to break through the insulating glue will increase, thereby improving the insulation performance of the insulating glue.
  • the insulating particles in the insulating gel are embedded in the insulating gel by doping, therefore, the insulating particles will be distributed in any position of the insulating gel.
  • the insulation performance of the insulating glue in any direction is macroscopically the same.
  • the insulating glue can lengthen the length of the breakdown path of the ESD current. In this way, the breakdown voltage of self-breakdown is increased, thereby improving the insulation performance in all directions. Based on this, when the insulating adhesive exists as an insulating adhesive layer, naturally, the insulating performance of the insulating adhesive layer along the direction of the bonding surface can also be improved.
  • the insulating particles are highly electronegative nonpolar insulating particles.
  • the insulating particles are highly electronegative insulating particles. It should be noted that high negativity means that the electronegativity of the insulating particles is higher than that of the insulating colloid.
  • the electronegativity of the insulating particle represents its ability to absorb electrons.
  • the electronegativity of the insulating particles is higher than that of the insulating colloid, the insulating particles have high electronegativity. Compared with the case of low electronegativity, higher electronegativity makes it have a stronger ability to absorb electrons. On this basis, a large number of electrons are adsorbed by the surface of the insulating particles, which reduces the number of electrons in the medium around the insulating particles.
  • the impact ionization phenomenon in the medium around the insulating particles will weaken, so that the number of ions in the medium around the insulating particles will drop sharply, and the medium around the insulating particles will be difficult to be broken down, thus improving the insulation
  • the electrical breakdown resistance of the glue that is, the insulation performance.
  • the insulating particles are non-polar insulating particles.
  • the insulating particles are polar, when the insulating particles are non-polar, an internal electric field in the same direction as the breakdown field strength will not be generated between two adjacent insulating particles. In this case, the total electric field along the breakdown direction of the insulating glue will not be the sum of the internal electric field and the breakdown field strength, so that the insulating performance of the insulating glue will not be weakened.
  • the material of the insulating colloid includes rubber or other materials.
  • the insulating material used for doping to form insulating particles includes tetrafluoroethylene and/or tetrafluoroethylene polymer.
  • the insulating particles of the insulating material have both high electronegativity and non-polarity. Therefore, the high electronegativity ensures that the doping of the insulating particles can improve the insulating performance of the insulating glue, and the non-polarity ensures the doping of the insulating particles. Will not weaken the insulation performance of insulating glue.
  • the tetrafluoroethylene polymer includes one or more of polytetrafluoroethylene, tetrafluoroethylene-hexafluoropropylene copolymer, and perfluoropropyl perfluorovinyl ether-polytetrafluoroethylene copolymer.
  • the mass ratio of the insulating particles to the insulating colloid is 30% to 60%.
  • the doping ratio of insulating particles should not be too high, nor should it be too low. Since the insulating particles are not viscous, when the doping ratio is too high, the viscosity and strength of the insulating glue will decrease. When the doping ratio is too low, the effect of improving the insulating performance of the insulating glue is not obvious.
  • the mass ratio of the insulating particles to the insulating colloid is controlled to be 30% to 60%. On the one hand, the viscosity and strength of the insulating glue can be ensured, and on the other hand, the insulating performance of the insulating glue can be guaranteed.
  • an insulating tape in a second aspect, includes: a first film layer and a colloid layer, and the colloid layer is stacked on the first film layer.
  • the gel layer is made of the insulating glue described in any one of the first aspect.
  • the diameter of the insulating particles is less than one tenth of the thickness of the colloidal layer. It should be understood that the diameter of the insulating particles should neither be too large nor too small. If the diameter of the insulating particles is too large, the non-sticky insulating particles distributed on the surface of the colloidal layer will make the surface viscosity of the colloidal layer too low; the non-sticky insulating particles distributed in the colloidal layer will not be easy to insulate. Colloidal bonding, resulting in lower overall strength of the colloidal layer. Moreover, the insulating colloid between two insulating particles is relatively thin, which causes the colloidal layer to crack easily.
  • the above-mentioned insulating tape further includes a second film layer.
  • the second film layer is stacked on the surface of the colloid layer away from the first film layer. The presence of the second film layer allows the colloid layer to be protected until use.
  • a method for preparing insulating glue comprises: processing the insulating glue into a molten state.
  • the insulating particles are doped into the molten insulating colloid and mixed to obtain the insulating colloid to be treated.
  • the breakdown field strength of the insulating particles is greater than that of the insulating colloid, and the insulating particles are highly electronegative non-polar insulating particles.
  • the insulating glue to be treated is cooled to obtain the insulating glue.
  • the material of the insulating colloid includes rubber or other materials.
  • the insulating material used for doping to form insulating particles includes tetrafluoroethylene and/or tetrafluoroethylene polymer.
  • the tetrafluoroethylene polymer includes one or more of polytetrafluoroethylene, tetrafluoroethylene-hexafluoropropylene copolymer, and perfluoropropyl perfluorovinyl ether-polytetrafluoroethylene copolymer.
  • the mass ratio of the insulating particles to the insulating colloid is 30% to 60%.
  • Figure 1a is a schematic structural diagram of an electronic device provided by some embodiments of the present application.
  • Figure 1b is a sectional view of Figure 1a cut along the A1-A1 line;
  • Fig. 1c is a partially enlarged view of area X in Fig. 1b;
  • Fig. 2 is a structural schematic diagram of an insulating adhesive layer in a possible design scheme
  • Fig. 3 is a schematic cross-sectional structure diagram of an insulating tape provided by some embodiments of the present application.
  • FIG. 4 is a comparison diagram of the influence relationship of insulating particles on the ESD current breakdown path provided by some embodiments of the present application.
  • FIG. 5 is a schematic diagram of the breakdown path of the ESD current in the medium around the insulating particles provided by some embodiments of the present application;
  • FIG. 6 is a schematic diagram of changes in the number of electrons during the electron avalanche process provided by some embodiments of the present application.
  • Figure 7 is a schematic diagram of the polarization of polar molecules under the action of an electric field provided by some embodiments of the application.
  • Fig. 8 is a schematic cross-sectional structure diagram of an insulating tape provided by another embodiment of the present application.
  • FIG. 9 is a flow chart of a method for preparing an insulating glue provided in an embodiment of the present application.
  • first and second are used for description purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features.
  • a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features.
  • multiple types refers to two or more types (including two types).
  • orientation terms such as “upper” are defined relative to the schematic placement orientations of components in the drawings. It should be understood that these directional terms are relative concepts, and they are used for relative descriptions and To clarify, it may change accordingly according to the change in the orientation of the components placed in the drawings.
  • insulating tape is usually used for bonding to block the gap.
  • the insulating tape usually consists of an insulating film and an insulating glue layer stuck on the insulating film.
  • the insulating adhesive layer needs to be doped with viscous substances, so that its insulating property is lower than that of the insulating film and becomes an insulating weak area.
  • the shell parts on both sides of the gap are insulators, there will be a risk of electrostatic discharge in the gap, and the electrostatic current may break down the insulating adhesive layer, thereby causing damage to the internal components of the electronic device.
  • FIG. 1a is a schematic structural diagram of an electronic device provided by some embodiments of the present application.
  • the electronic device 100 is a mobile phone, including a rear case 103 , a camera bracket 104 mounted on the rear case 103 , and a camera module 106 disposed in the camera bracket 104 .
  • FIG. 1b is a cross-sectional view of the electronic device shown in FIG. 1a cut along line A1-A1.
  • the electronic device 100 includes a display screen 101, a middle frame 102, a rear case 103, a camera bracket 104 mounted on the rear case 103, and a camera module 106 arranged below the camera bracket 104, which are stacked sequentially from bottom to top.
  • the gap 107 is usually bonded with an insulating tape 105 below the gap.
  • FIG. 1c is a partially enlarged view of area X in FIG. 1b.
  • This figure shows the gap 107 between the camera bracket 104 and the rear case 103 .
  • the insulating tape 105 is usually made of an insulating film 1051 and an insulating adhesive layer 1052 attached to the insulating film 1051.
  • the insulating film 1051 is bonded to the rear shell 103 areas on both sides of the camera bracket 104, and is passed through the insulating film 1051.
  • the adhesive layer 1052 is used for bonding.
  • the camera bracket 104 and the rear shell 103 are usually non-metallic insulating materials, when the electrostatic charge accumulates to a certain extent, ESD will occur through the gap 107 , thereby generating ESD current.
  • the insulating adhesive layer 1052 can isolate substances from entering the electronic device 100 , it cannot isolate the ESD current exceeding its insulating capacity. The ESD current may break through the insulating adhesive layer 1052 along the direction indicated by the dotted arrow in the figure, thereby causing damage to internal components such as the camera module 106 .
  • FIG. 2 is a schematic structural diagram of the insulating adhesive layer in a possible design solution.
  • the insulating adhesive layer 1052 is a composite layer structure, including a first insulating adhesive layer M1 , a PET film layer M2 , and a second insulating adhesive layer M3 stacked in sequence.
  • an O—X0Z0 coordinate system is established in FIG. 2 , the X0 direction is the direction where the bonding surface of the insulating adhesive layer 1052 is located, and the Z0 direction is the stacking direction of each composite layer in the insulating adhesive layer 1052 .
  • the bonding surface of the insulating adhesive layer 1052 is a surface for bonding with other structures, and the X0 direction is perpendicular to the Z0 direction. It should be understood that the insulating adhesive layer 1052 is usually a sheet structure during use, and the bonding surface of the insulating adhesive layer 1052 is the wide surface of the sheet structure, the X0 direction is the direction where the wide surface of the sheet structure is located, and the Z0 direction is The thickness direction of the sheet structure.
  • the second insulating adhesive layer M3, the PET film layer M2, and the first insulating adhesive layer M1 need to be broken down in order to completely break down the insulating adhesive layer 1052. Since the insulation performance of the PET film layer M2 is higher than that of the insulating adhesive layer, the existence of the PET film layer M2 increases the breakdown difficulty of the breakdown path, thereby increasing the insulating performance of the insulating adhesive layer 1052 along the Z0 direction.
  • the insulation adhesive layer 1052 obtained by laminating the PET film layer M2 along the Z0 direction increases the insulation performance along the Z0 direction, and its insulation performance along the X0 direction cannot be effectively guaranteed.
  • the insulation performance of the insulating adhesive layer 1052 along the X0 direction depends on the PET film layer M2; when the ESD along the X0 direction
  • the insulation performance of the insulating adhesive layer 1052 along the X0 direction mainly depends on the insulating adhesive layer (such as the second insulating adhesive layer M3), The PET film layer M2 will probably be completely useless. Therefore, for the application scenario of ESD current breakdown along the X0 direction (such as the scenario shown in FIG. 1 c ), the insulating adhesive layer 1052 shown in FIG. 2 cannot provide effective protection for the electrostatic protection
  • the PET film layer M2 can form a strong bond with the first insulating adhesive layer M1 and the second insulating adhesive layer M3 respectively. Cohesion, thus forming a stable and reliable composite layer structure.
  • the thickness of the insulating adhesive layer 1052 along the Z0 direction is small, if the PET film is stacked along the X0 direction, it will not be able to form a good adhesive force between the composite layers on both sides, so that the insulating adhesive layer 1052 has easy delamination and low strength. bad question.
  • the solution of stacking PET films is suitable for increasing the insulating performance of the insulating adhesive layer 1052 along the Z0 direction, but not suitable for increasing the insulating performance of the insulating adhesive layer 1052 along the X0 direction.
  • the embodiment of the present application provides an insulating tape and an insulating adhesive.
  • the insulating tape and the insulating glue provided by the embodiment of the present application will be described in detail below with reference to FIGS. 3 to 5 .
  • FIG. 3 is a schematic cross-sectional structure diagram of an insulating tape provided by some embodiments of the present application.
  • the insulating tape 00 includes a first film layer L1 , an adhesive layer L2 , and a second film layer L3 stacked in sequence.
  • the first film layer L1 and the second film layer L3 are used for adhering the colloid layer L2.
  • the user can use the colloid layer L2 for double-sided bonding by uncovering the first film layer L1 and the second film layer L3; L3, use the colloid layer L2 for one-sided bonding.
  • the material of the first film layer L1 and the second film layer L3 can be polyethylene terephthalate (polyethylene glycol terephthalate, PET), polyvinyl chloride (polyvinyl chloride, PVC), or polyethylene ( polyethene, PE).
  • the colloid layer L2 is made of insulating glue 01.
  • the insulating glue 01 includes insulating glue 10 and insulating particles 20 doped in the insulating glue 10 .
  • the breakdown field strength of the insulating particles 20 is greater than the breakdown field strength of the insulating colloid 10 .
  • the specific internal structure of the insulating glue 01 forming the colloid layer L2 is shown in FIG. 3 , and the embodiment of the present application does not separately illustrate the insulating glue 01 .
  • the O-X1Z1 coordinate system is established on Fig. 3, the X1 direction is the direction where the adhesive surface of the colloidal layer L2 is located, and the Z1 direction is the direction of the first film layer L1, the colloidal layer L2, and the second film layer L3
  • the stacking direction is also the thickness direction of the colloidal layer L2.
  • the X1 direction, the Y1 direction, and the Z1 direction shown in other figures in the embodiments of the present application may refer to the implementation of the corresponding directions in FIG. 3 , which will not be repeated hereafter.
  • FIG. 4 shows a schematic diagram of the breakdown path of the ESD current along the X1 direction.
  • FIG. 4 is a comparative diagram of the influence relationship of the insulating particles 20 on the breakdown path of the ESD current provided by some embodiments of the present application.
  • the insulating tape shown in (a) in FIG. 4 is the insulating tape 00 shown in FIG. 3
  • the colloid layer L2 is made of insulating glue 01 doped with insulating particles 20 .
  • the colloid layer L2 is made of insulating glue that is not doped with the insulating particles 20 shown in (a) in FIG. 4 , That is, it is made of insulating colloid 10 shown in (a) in FIG. 4 .
  • the insulating particles 20 in the colloidal layer L2 are doped throughout the Z1 direction, therefore, no matter where the ESD current I3 acts on the colloidal layer L2 along the Z1 direction, The breakdown path can be lengthened and will not be affected by the action position.
  • the insulating properties of the colloidal layer L2 along the X1 direction are not different in the Z1 direction, and the insulating properties are more stable and reliable.
  • FIG. 4 shows that the insulation performance of the colloid layer L2 along the X1 direction in FIG. Can be improved, the principle is similar, and will not be repeated here. That is to say, the insulation properties of the colloidal layer L2 in the embodiment of the present application are improved in all directions during use.
  • the insulating particles 20 are highly electronegative nonpolar insulating particles, that is, the insulating particles 20 are highly electronegative insulating particles on the one hand, and on the other hand are Non-polar insulating particles. It should be noted that the insulating particles 20 are highly electronegative insulating particles, which means that the electronegativity of the insulating particles 20 is higher than that of the insulating colloid 10 .
  • the insulating colloid 10 is made of organic insulating materials.
  • the organic insulating material may include rubber or plastic.
  • the rubber may include natural rubber or synthetic rubber, and the synthetic rubber may include nitrile, silicone rubber, or styrene-butadiene rubber.
  • Plastics may include thermoplastics and thermosetting plastics, thermoplastics may include acrylic, epoxy, or phenolic resins; thermosetting plastics may include acrylic, PE, PVC, or PET.
  • the insulating material used for doping to form insulating particles 20 includes tetrafluoroethylene and/or tetrafluoroethylene polymer.
  • the tetrafluoroethylene polymer may include one or more of polytetrafluoroethylene, tetrafluoroethylene-hexafluoropropylene copolymer, and perfluoropropyl perfluorovinyl ether-polytetrafluoroethylene copolymer.
  • the breakdown field strength of the insulating particles 20 there are many factors affecting the breakdown field strength of the insulating particles 20 , such as the material itself, electronegativity, and non-polarity. That is to say, the high electronegativity and nonpolarity of the insulating colloid 10 help to improve the breakdown field strength of the insulating particles 20, thereby helping to make the breakdown field strength of the insulating particles 20 higher than that of the insulating colloid 10. Wear strong. However, the breakdown field strength of the insulating particles 20 is higher than that of the insulating colloid 10, which does not mean that the electronegativity of the insulating colloid 10 must be higher than that of the insulating colloid 10, and the insulating particles 20 must be non-polar. .
  • the breakdown field strength of the insulating particles 20 is also higher than that of the insulating colloid.
  • the electronegativity of the insulating particle 20 represents its ability to absorb electrons.
  • the electronegativity of the insulating particles 20 is higher than that of the insulating colloid 10 , the insulating particles 20 have high electronegativity. Compared with the case of low electronegativity, the higher electronegativity makes it have a stronger ability to absorb electrons, thereby increasing the breakdown voltage of the medium around the insulating particles 20. The specific reasons will be analyzed below with reference to FIG. 5 .
  • FIG. 5 is a schematic diagram of a breakdown path of an ESD current in a medium around insulating particles 20 according to some embodiments of the present application.
  • the insulating particles 20 in FIG. 5 are not filled. It should be noted that the medium around the insulating particles 20 is divided into the following situations:
  • Case 1 The medium around the insulating particles 20 is an air gap 30 .
  • the breakdown process of the air gap 30 is an electron avalanche process. Specifically, please refer to Fig. 6, the electron N1 moves directionally under the action of the electric field, when the electric field strength is strong enough, the electron N1 will be accelerated and hit the neutral air molecule, ionizing a new electron N2 and a new ion (not shown in the figure). In the same process, electrons N1 and electrons N2 hit neutral air molecules under the action of an electric field, electron N1 ionizes a new electron N3 and a new ion (not shown in the figure), and electron N2 ionizes a new electron N4 and new ions (not shown in the figure).
  • the insulating particles 20 have a higher ability to absorb electrons, a large number of electrons are adsorbed by the surface of the insulating particles 20 , so that the number of electrons in the air gap 30 decreases.
  • the impact ionization phenomenon in the air gap 30 will be weakened, so that the number of ions in the air gap 30 will decrease sharply, and the air gap 30 is difficult to be broken down.
  • the stronger the electric field strength the stronger the impact ionization phenomenon described above, and thus the greater the number of electrons and ions in the air gap 30 .
  • the electric field intensity needs to be increased. According to the field strength formula, a stronger breakdown voltage is required when the gap gap remains unchanged.
  • Case 2 the medium around the insulating particle 20 is the insulating colloid 10 .
  • the breakdown of the insulating colloid 10 is a solid breakdown.
  • the breakdown process is specifically as follows: when the electric field strength is large enough, the electron N1 moves directionally under the action of the electric field, runs from one potential well to another potential well, forms a directional movement, and thus hits the solid molecules of the insulating colloid 10, thereby generating insulation Electron avalanche process in colloid 10. This process is similar to that occurring in the air gap 30 , and will not be repeated here.
  • the insulating particle 20 has a higher ability to absorb electrons, a large number of electrons are adsorbed by the surface of the insulating particle 20 , so that the number of electrons in the insulating colloid 10 around the insulating particle 20 decreases.
  • the impact ionization in the insulating colloid 10 around the insulating particles 20 will weaken, so that the number of ions in the insulating colloid 10 around the insulating particles 20 will decrease sharply, making it difficult to be broken down. Based on this, in order to break down the insulating colloid 10 around the insulating particles 20 , a stronger breakdown voltage is required.
  • the insulating particles 20 are non-polar, it means that their polarizability is low, that is, they are not easily polarized under the action of an electric field. Compared with the case where the insulating particles 20 are polar, the non-polar insulating particles 20 will not reduce the breakdown voltage of the insulating glue 01, and thus will not reduce the insulating performance of the insulating glue 01, which will be analyzed in conjunction with FIG. 7 below specific reason.
  • FIG. 7 shows a schematic diagram of the polarization of polar molecules under the action of an electric field. It can be found from Figure 7 that the polarized molecules are polarized under the action of the external electric field E0, so that one end is positively charged and the other end is negatively charged. An internal electric field E1 in the same direction as the external electric field E0 will be formed between two adjacent polar molecules.
  • the direction of the external electric field E0 is the X1 direction.
  • the insulating particles 20 are polar, an internal electric field E1 in the same direction as the breakdown field strength will be generated between two adjacent insulating particles 20 , that is, an internal electric field E1 in the X1 direction.
  • the total electric field of the colloidal layer L2 along the X1 direction is the sum of the internal electric field E1 and the external electric field E0, which makes the colloidal layer L2 easier to break down and weakens the insulating performance of the colloidal layer L2 along the X1 direction.
  • the insulating particles 20 are non-polar, no internal electric field E1 will be generated, so that the insulating performance of the colloid layer L2 along the X1 direction will not be weakened.
  • the electronegativity and non-polarity of the insulating particles 20 both have an effect on ensuring the insulating performance of the colloid layer L2.
  • the concepts of electronegativity and non-polarity of the insulating particles 20 can be implemented in separate embodiments, that is, in some embodiments, the electronegativity of the insulating particles 20 is higher than that of the insulating colloid 10 , without the need for the insulating particles 20 to be non-polar.
  • the material of the insulating particles 20 may include vinylidene fluoride polymer, vinylidene fluoride copolymer, chlorotrifluoroethylene polymer, or chlorotrifluoroethylene copolymer.
  • the insulating particles 20 are non-polar, and the electronegativity of the insulating particles 20 is not required to be higher than that of the insulating colloid 10 .
  • the insulating particles 20 may be made of materials whose breakdown field strength is greater than that of the insulating colloid 10 among the aforementioned organic insulating materials. This embodiment of the present application does not specifically limit it.
  • the diameter of the insulating particle 20 is less than or equal to one-tenth of the diameter of the colloidal layer L2 .
  • the diameter of the insulating particle 20 may be one-tenth of the diameter of the colloidal layer L2, or one-eleventh of the colloidal layer L2.
  • the diameter of the insulating particles 20 should not be too large. If the diameter of the insulating particles 20 is too large, the non-adhesive insulating particles 20 distributed on the surface of the colloidal layer L2 will cause the surface viscosity of the colloidal layer L2 to be too low; the non-sticky insulating particles 20 distributed in the colloidal layer L2 , it will not be easy to bond with the insulating colloid 10, resulting in a lower overall strength of the colloid layer L2. Moreover, the insulating colloid 10 between two insulating particles 20 is relatively thin, which causes the colloid layer L2 to crack easily in the Z1 direction.
  • the mass ratio of the insulating particles 20 to the insulating colloid 10 is 30% to 60%.
  • the mass ratio of the insulating particles 20 to the insulating colloid 10 is 30%, 45%, 50%, 55%, 60%.
  • the doping ratio of the insulating particles 20 should neither be too high nor too low. Since the insulating particles 20 do not have viscosity, when the doping ratio is too high, the viscosity and strength of the insulating glue will decrease. When the doping ratio is too low, the effect of improving the insulating performance of the insulating glue is not obvious.
  • the mass ratio of the insulating particles 20 to the insulating colloid 10 is controlled to be 30% to 60%. On the one hand, the viscosity and strength of the insulating glue can be guaranteed, and on the other hand, the insulating performance of the insulating glue can be guaranteed.
  • FIG. 3 illustrates an example in which the insulating tape 00 includes two film layers. In other embodiments, the insulating tape 00 may only include one film layer.
  • the insulating tape 00 includes a first film layer L1 and an adhesive layer L2 . Wherein, the colloid layer L2 is laminated on the first film layer L1.
  • the specific implementation of the first film layer L1 and the colloid layer L2 can refer to the relevant content shown in FIG. 3 , which will not be repeated here.
  • the insulating tape 00 can be produced by wrapping, which is similar to the wrapping of transparent glue on the market. During actual use, the user can use the colloid layer L2 for double-sided bonding by uncovering the first film layer L1; of course, the colloid layer L2 with the first film layer L1 can also be used for single-sided bonding.
  • the embodiment of the present application also provides a preparation method of the insulating glue.
  • the preparation method of the insulating glue includes:
  • insulating glue after the insulating glue to be treated is cooled, other processing can also be adaptively carried out to obtain the required insulating glue.
  • the insulating glue is foam glue
  • foaming treatment can be performed, and then shaping processing can be performed to obtain insulating glue.
  • the insulating glue is not foam glue, after S903 and before S904, the shaping process is directly carried out to obtain the insulating glue.
  • the materials, mass ratios, and diameters of the insulating colloid and the insulating particles have been described in detail in the relevant embodiment in FIG. 3 , and reference may be made to the embodiment, which will not be repeated here.

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Abstract

本申请公开了一种绝缘胶、绝缘胶带及绝缘胶的制备方法。其中，该绝缘胶包括：绝缘胶体、以及掺杂于绝缘胶体内的绝缘颗粒。其中，绝缘颗粒的击穿场强大于绝缘胶体的击穿场强。由于绝缘颗粒的击穿场强大于绝缘胶体的击穿场强，因此，绝缘胶体比绝缘颗粒更容易击穿。当静电放电电流作用于该绝缘胶时，静电放电电流将击穿绝缘性能更差、更容易击穿的绝缘胶体，而绕过绝缘性能更好、更难击穿的绝缘颗粒，使得静电放电电流的击穿路径变长，击穿绝缘胶所需的击穿电压将增加，从而提升了绝缘胶的绝缘性能。

Description

一种绝缘胶、绝缘胶带及绝缘胶的制备方法
本申请要求于2021年11月04日提交国家知识产权局、申请号为202111310407.0、发明名称为“绝缘胶、绝缘胶带及绝缘胶的制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请实施例涉及绝缘胶技术领域，尤其涉及一种绝缘胶、绝缘胶带及绝缘胶的制备方法。
背景技术
手机、平板等电子设备的两两壳体部件之间不可避免地存在缝隙。出于防尘防水等目的，通常使用绝缘胶带进行粘合，以阻断该缝隙。该绝缘胶带通常由绝缘薄膜和粘在绝缘薄膜上的绝缘胶层构成。为了使得绝缘胶层具备粘性，绝缘胶层需要掺杂粘性物质，从而使得其绝缘性低于绝缘薄膜，成为绝缘薄弱区。当缝隙两边的壳体部件为绝缘体时，缝隙将存在静电放电风险，产生静电放电(ESD，electro-static discharge)电流，该ESD电流有可能沿着绝缘胶层的粘接面所在方向击穿绝缘胶层，进而造成电子设备内部器件损坏。
可见，电子设备是否具有足够的静电防护能力以阻挡静电放电，很大程度上依赖绝缘胶层的绝缘性能。因此，如何提高用于静电防护的绝缘胶层的绝缘性能，对于保障电子设备的可靠性至关重要。目前常用的方式无法有效保证绝缘胶层在粘接面所在方向的绝缘性能。
发明内容
本申请实施例提供一种绝缘胶、绝缘胶带及绝缘胶的制备方法，用于解决现有技术中无法有效保证绝缘胶层在粘接面所在方向的绝缘性能的问题。
为达到上述目的，本申请的实施例采用如下技术方案：
第一方面，提供了一种绝缘胶。该绝缘胶包括：绝缘胶体、以及掺杂于绝缘胶体内的绝缘颗粒。其中，绝缘颗粒的击穿场强大于绝缘胶体的击穿场强，且绝缘颗粒为高电负性非极性绝缘微粒。
该绝缘胶中，由于绝缘颗粒的击穿场强大于绝缘胶体的击穿场强，因此，绝缘胶体比绝缘颗粒更容易击穿。当ESD电流作用于该绝缘胶时，ESD电流将击穿绝缘性能更差、更容易击穿的绝缘胶体，而绕过绝缘性能更好、更难击穿的绝缘颗粒，使得ESD电流的击穿路径变长，击穿绝缘胶所需的击穿电压将增加，从而提升了绝缘胶的绝缘性能。
应理解，绝缘胶内的绝缘颗粒通过掺杂的方式嵌入绝缘胶体内，因此，绝缘颗粒将分布在绝缘胶体的任意位置。换而言之，绝缘胶在任意方向所呈现的绝缘性能从宏观上来说是无差异的，对于来自于任意方向的ESD电流，该绝缘胶均可以通过加长该ESD电流的击穿路径的长度的方式，提升自身被击穿的击穿电压，从而提升各方向的绝缘性能。基于此，当绝缘胶作为绝缘胶层存在时，自然，该绝缘胶层沿粘接面所在 方向的绝缘性能也可以得到提升。
此外，绝缘颗粒为高电负性非极性绝缘微粒。
一方面，绝缘颗粒为高电负性绝缘颗粒。需要说明的是，高负性是指绝缘颗粒的电负性高于绝缘胶体的电负性。
该实施例中，绝缘颗粒的电负性代表其吸附电子能力。当绝缘颗粒的电负性高于绝缘胶体的电负性时，绝缘颗粒具有高电负性。相比于低电负性的情况而言，更高的电负性使得其具有较强的吸附电子能力。在此基础上，大量电子被绝缘颗粒的表面所吸附，使得绝缘颗粒周围介质中的电子数量减少。随着绝缘颗粒周围介质中的电子数量减少，绝缘颗粒周围介质中碰撞电离现象将减弱，从而使得绝缘颗粒周围介质中的离子数量骤减，该绝缘颗粒周围介质难以被击穿，从而提高了绝缘胶的耐电击穿能力，即绝缘性能。
另一方面，绝缘颗粒为非极性绝缘颗粒。相比于绝缘颗粒为极性的情况，当绝缘颗粒为非极性时，两两相邻的绝缘颗粒之间将不会产生与击穿场强方向相同的内电场。在此情况下，绝缘胶沿击穿方向的总电场将不会为内电场和击穿场强之和，从而不会削弱绝缘胶的绝缘性能。
可选地，绝缘胶体的材料包括橡胶或材料。
进一步地，用于掺杂形成绝缘颗粒的绝缘材料包括四氟乙烯和/或四氟乙烯聚合物。该绝缘材料的绝缘颗粒同时具备高电负性和非极性，因此，高电负性保证了绝缘颗粒的掺杂可以提高绝缘胶的绝缘性能的同时，非极性保证了绝缘颗粒的掺杂不会削弱绝缘胶的绝缘性能。
更进一步地，四氟乙烯聚合物包括聚四氟乙烯、四氟乙烯－六氟丙烯共聚物、全氟丙基全氟乙烯基醚－聚四氟乙烯共聚物中的一种或多种。
可选地，绝缘颗粒与绝缘胶体的质量比为30％至60％。绝缘颗粒的掺杂比例不宜过高，也不宜过低。由于绝缘颗粒不具备粘性，当掺杂比例过高时，绝缘胶的粘性和强度将降低。当掺杂比例过低时，对于绝缘胶的绝缘性能的改善效果不明显。本实施例中，控制绝缘颗粒与绝缘胶体的质量比为30％至60％，一方面可以保证绝缘胶的粘性和强度，另一方面还可以保障绝缘胶的绝缘性能。
第二方面，提供了一种绝缘胶带。该绝缘胶带包括：第一薄膜层、以及胶体层，胶体层层叠于第一薄膜层上。其中，胶体层由第一方面任一项所述的绝缘胶制成。
在本申请的一些实施例中，绝缘颗粒的直径小于胶体层的厚度的十分之一。应理解，绝缘颗粒的直径不宜过大，也不宜过小。若绝缘颗粒的直径过大，分布在胶体层的表面的不具备粘性的绝缘颗粒，将使得胶体层的表面粘性过低；分布在胶体层内的不具备粘性的绝缘颗粒，将不容易和绝缘胶体粘合，导致胶体层的整体强度较低。并且，两两绝缘颗粒之间的绝缘胶体较薄，导致胶体层容易开裂。
在本申请的一些实施例中，上述绝缘胶带还包括第二薄膜层。第二薄膜层层叠于胶体层远离第一薄膜层的表面。第二薄膜层的存在使得胶体层在使用之前均可以得到保护。
第三方面，提供了一种绝缘胶的制备方法。该绝缘胶的制备方法包括：将绝缘胶体加工至熔融态。将绝缘颗粒掺杂至熔融态的绝缘胶体中并混合，获得待处理绝缘胶。 其中，绝缘颗粒的击穿场强大于绝缘胶体的击穿场强，且绝缘颗粒为高电负性非极性绝缘微粒。对待处理绝缘胶进行冷却处理，获得绝缘胶。
可选地，绝缘胶体的材料包括橡胶或材料。
进一步地，用于掺杂形成绝缘颗粒的绝缘材料包括四氟乙烯和/或四氟乙烯聚合物。
更进一步地，四氟乙烯聚合物包括聚四氟乙烯、四氟乙烯－六氟丙烯共聚物、全氟丙基全氟乙烯基醚-聚四氟乙烯共聚物中的一种或多种。
可选地，绝缘颗粒和绝缘胶体的质量比为30％至60％。
需要说明的是，第二方面至第三方面中任一实施例所带来的技术效果可参见第一方面中相应实施例所带来的技术效果，此处不再赘述。
附图说明
图1a为本申请一些实施例提供的电子设备的结构示意图；
图1b为图1a沿A1-A1线剖切所得的剖面图；
图1c为图1b中区域X的局部放大图；
图2为一种可能的设计方案中绝缘胶层的结构示意图；
图3为本申请一些实施例提供的绝缘胶带的剖面结构示意图；
图4为本申请一些实施例提供的绝缘颗粒对ESD电流击穿路径的影响关系对照图；
图5为本申请一些实施例提供的ESD电流在绝缘颗粒周围介质的击穿路径示意图；
图6为本申请一些实施例提供的电子雪崩过程中电子数量的变化示意图；
图7为申请一些实施例提供的极性分子在电场作用下的极化示意图；
图8为本申请另一些实施例提供的绝缘胶带的剖面结构示意图；
图9为本申请实施例提供的一种绝缘胶的制备方法的流程图。
具体实施方式
在本申请实施例中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。
在本申请实施例中，“和/或”，仅仅是一种描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B这三种情况。另外，本文中字符“/”，一般表示前后关联对象是一种“或”的关系。
本申请实施例中，“多种”是指两种以上(包含两种)。
本申请实施例中，“上”等方位术语是相对于附图中的部件示意置放的方位来定义的，应当理解到，这些方向性术语是相对的概念，它们用于相对于的描述和澄清，其可以根据附图中部件所放置的方位的变化而相应地发生变化。
手机、平板等电子设备的两两壳体部件之间不可避免地存在缝隙。出于防尘防水等目的，通常使用绝缘胶带进行粘合，以阻断该缝隙。该绝缘胶带通常由绝缘薄膜和粘在绝缘薄膜上的绝缘胶层构成。为了使得绝缘胶具备粘性，绝缘胶层需要掺杂粘性物质，从而使得其绝缘性低于绝缘薄膜，成为绝缘薄弱区。当缝隙两边的壳体部件为绝缘体时，缝隙将存在静电放电风险，静电电流有可能击穿绝缘胶层，进而造成电子设备内部器件损坏。为了方便理解，下面结合图1a至图1c对上述静电发生的场景进行举例说明。
示例性地，图1a为本申请一些实施例提供的电子设备的结构示意图。该电子设备100为手机，包括后壳103、安装于后壳103上的摄像头支架104、以及设置于摄像头支架104内的摄像头模组106。请参阅图1b，图1b为图1a所示的电子设备沿A1-A1线剖切所得的剖面图。由图可见，该电子设备100包括由下至上依次层叠的显示屏101、中框102、后壳103、安装于后壳103上的摄像头支架104、以及设置于摄像头支架104下方的摄像头模组106。为了摄像头支架104和后壳103之间通常会存在缝隙，液体、粉尘等外界物质可能通过该缝隙进入电子设备100内部，影响摄像头模组106等内部器件的可靠性。基于此，通常在缝隙的下方通过绝缘胶带105对该缝隙107进行粘合。
具体来说，请参阅图1c，图1c为图1b中区域X的局部放大图。该图中示意了摄像头支架104和后壳103之间的缝隙107。为了阻断该缝隙107，绝缘胶带105通常由绝缘薄膜1051、以及附着于绝缘薄膜1051上的绝缘胶层1052构成，绝缘薄膜1051与摄像头支架104两侧的后壳103区域贴合，并通过绝缘胶层1052进行粘接。需要说明的是，由于摄像头支架104和后壳103通常为非金属的绝缘材料，因此，当其静电荷积累到一定程度时，将通过缝隙107发生ESD现象，从而产生ESD电流。虽然上述绝缘胶层1052可以隔绝物质进入电子设备100内部，但是对超过其绝缘能力的ESD电流却无法隔绝。ESD电流将可能沿图中虚线箭头示意的方向击穿绝缘胶层1052，从而对摄像头模组106等内部器件造成损坏。
由图1c可见，电子设备100是否具有足够的静电防护能力以阻挡静电放电，很大程度上依赖绝缘胶层1052的绝缘性能。因此，如何提高用于静电防护的绝缘胶层1052的绝缘性能，对于保障电子设备100的可靠性至关重要。目前较为常用的方式是通过将绝缘胶层1052设计为各向异性绝缘胶的结构，实现绝缘性能的提升。
示例性地，请参阅图2，图2为一种可能的设计方案中绝缘胶层的结构示意图。该绝缘胶层1052为复合层结构，包括依次层叠的第一绝缘胶层M1、PET薄膜层M2、第二绝缘胶层M3。为方便下文描述，在图2上建立O—X0Z0坐标系，X0方向为绝缘胶层1052的粘接面所在的方向，Z0方向为绝缘胶层1052中各复合层的堆叠方向。其中，绝缘胶层1052的粘接面为用于与其他结构进行粘接的面，X0方向垂直于Z0方向。应理解，绝缘胶层1052在使用过程中通常为片状结构，则绝缘胶层1052的粘接面为片状结构的宽面，X0方向为片状结构的宽面所在的方向，Z0方向为片状结构的厚度方向。
当沿Z0方向的ESD电流I0作用于该绝缘胶层1052时，需要依次击穿第二绝缘胶层M3、PET薄膜层M2、第一绝缘胶层M1，才能将绝缘胶层1052彻底击穿。由于PET薄膜层M2高于绝缘胶层的绝缘性能，因此，PET薄膜层M2的存在增加了该击穿路径的击穿难度，从而增加了绝缘胶层1052沿Z0方向的绝缘性能。
然而，上述通过沿Z0方向层叠PET薄膜层M2的方案所获得的绝缘胶层1052增加的是沿Z0方向的绝缘性能，其沿X0方向的绝缘性能无法得到有效地保证。具体而言，当沿X0方向的ESD电流I1作用于该绝缘胶层1052的PET薄膜层M2时，则绝缘胶层1052沿X0方向的绝缘性能取决于PET薄膜层M2；当沿X0方向的ESD电流I2作用于PET薄膜层M2以外的其他位置(如第二绝缘胶层M3)时，则绝缘胶层1052沿X0方向的绝缘性能主要取决于绝缘胶层(如第二绝缘胶层M3)，PET薄膜层M2 将可能完全失去效用。因此，对于沿X0方向击穿的ESD电流的应用场景(如图1c所示的场景)而言，图2所示的绝缘胶层1052无法为电子设备的静电防护能力提供有效保障。
此外，由于绝缘胶层1052沿X0方向的宽度较大，因此，当沿Z0方向层叠PET薄膜时，PET薄膜层M2可以分别和第一绝缘胶层M1、第二绝缘胶层M3形成较强的粘结力，从而形成稳固、牢靠的复合层结构。但由于绝缘胶层1052沿Z0方向的厚度较小，若沿X0方向层叠PET薄膜，将无法和两侧的复合层之间形成良好的粘结力，从而绝缘胶层1052存在易脱层、强度差的问题。换而言之，通过层叠PET薄膜的方案适用于增加绝缘胶层1052沿Z0方向的绝缘性能，对于增加绝缘胶层1052沿X0方向的绝缘性能并不适用。
基于此，为了可以提升绝缘胶层1052沿X0方向的绝缘性能，本申请实施例提供了一种绝缘胶带和绝缘胶。下面结合图3至图5对本申请实施例提供的绝缘胶带和绝缘胶进行详细说明。
请参阅图3，图3为本申请一些实施例提供的绝缘胶带的剖面结构示意图。该绝缘胶带00包括依次层叠的第一薄膜层L1、胶体层L2、以及第二薄膜层L3。
其中，第一薄膜层L1和第二薄膜层L3用于粘附胶体层L2。实际使用过程中，使用者通过揭开第一薄膜层L1和第二薄膜层L3，可以使用胶体层L2进行双面粘接；当然，也可以通过揭开第一薄膜层L1或第二薄膜层L3，使用胶体层L2进行单面粘接。示例性地，第一薄膜层L1和第二薄膜层L3的材质可以为聚对苯二甲酸乙二醇酯(polyethylene glycol terephthalate，PET)、聚氯乙烯(polyvinyl chloride，PVC)、或聚乙烯(polyethene，PE)。
其中，胶体层L2由绝缘胶01制成。该绝缘胶01包括绝缘胶体10、以及掺杂于绝缘胶体10内的绝缘颗粒20。绝缘颗粒20的击穿场强大于绝缘胶体10的击穿场强。
需要说明的是，图3中示意了形成胶体层L2的绝缘胶01的具体内部构造，本申请实施例不再对绝缘胶01进行单独示意。为方便下文描述，在图3上建立O—X1Z1坐标系，X1方向为胶体层L2的粘接面所在的方向，Z1方向为第一薄膜层L1、胶体层L2、以及第二薄膜层L3的层叠方向，也为胶体层L2的厚度方向。此外，本申请实施例中其他各图示意的X1方向、Y1方向、Z1方向可以参照图3中相应方向的实施，后续不再赘述。
图3所示的绝缘胶带00中，由于绝缘颗粒20的击穿场强大于绝缘胶体10的击穿场强，因此，绝缘颗粒20的绝缘性能大于绝缘胶体10的绝缘性能，绝缘胶体10比绝缘颗粒20更容易击穿。当沿X1方向的ESD电流作用于图3所示的胶体层L2时，ESD电流将击穿绝缘性能更差、更容易击穿的绝缘胶体10，而绕过绝缘性能更好、更难击穿的绝缘颗粒20，图4中的(a)示意了沿X1方向的ESD电流的击穿路径示意图。
请参阅图4，图4为本申请一些实施例提供的绝缘颗粒20对ESD电流击穿路径的影响关系对照图。其中，图4中的(a)所示的绝缘胶带为图3所示的绝缘胶带00，胶体层L2由掺杂有绝缘颗粒20的绝缘胶01制成。区别于图4中的(a)，图4中的(b)所示的绝缘胶带中，胶体层L2由未掺杂图4中的(a)所示的绝缘颗粒20的绝缘胶制成，即由图4中的(a)所示的绝缘胶体10制成。
通过对比图4中的(a)的ESD电流I3(图中带箭头的粗线)的击穿路径、以及图4中的(b)中的ESD电流I4的击穿路径(图中带箭头的粗线)可以发现，绝缘颗粒20的存在使得ESD电流的击穿路径变长。根据场强微分公式可知，当击穿路径变长时，沿X1方向击穿胶体层L2所需的击穿电压将增加，因此，胶体层L2沿X1方向的绝缘性能得以提升。
此外，应理解，图4中的(a)中，胶体层L2内的绝缘颗粒20在整个Z1方向均有掺杂，因此，无论ESD电流I3作用于胶体层L2沿Z1方向上的哪个位置，其击穿路径均得以变长，不会受作用位置所影响。换而言之，相比于图2所示的绝缘胶层1052而言，胶体层L2沿X1方向的绝缘性能在Z1方向上并不会存在差异，绝缘性能更稳定和牢靠。
需要说明的是，虽然图4中的(a)以沿X1方向的ESD电流I3说明了图3中胶体层L2沿X1方向的绝缘性能得以提升，应理解，图3沿Z1方向的绝缘性能同样得以提升，原理类似，此处不再赘述。也就是说，本申请实施例中的胶体层L2在使用过程中沿各向的绝缘性能均达到了提升。
进一步地，请继续参阅图3，在本申请的一些实施例中，绝缘颗粒20为高电负性非极性绝缘颗粒，即绝缘颗粒20一方面为高电负性绝缘颗粒，另一方面为非极性绝缘颗粒。需要说明的是，绝缘颗粒20为高电负性绝缘颗粒，是指绝缘颗粒20的电负性高于绝缘胶体10的电负性。
示例性地，绝缘胶体10由有机绝缘材料制成。示例性地，有机绝缘材料可以包括橡胶或塑料。其中，橡胶可以包括天然橡胶或合成橡胶，合成橡胶可以包括丁腈、硅橡胶、或丁苯橡胶。塑料可以包括热塑型塑料和热固型塑料，热塑性塑料可以包括丙烯酸、环氧树脂、或酚醛树脂；热固性塑料可以包括丙烯酸、PE、PVC、或PET。在此情况下，用于掺杂形成绝缘颗粒20的绝缘材料包括四氟乙烯和/或四氟乙烯聚合物。
其中，四氟乙烯聚合物可以包括聚四氟乙烯、四氟乙烯－六氟丙烯共聚物、全氟丙基全氟乙烯基醚－聚四氟乙烯共聚物中的一种或多种。
需要说明的是，影响绝缘颗粒20的击穿场强的因素较多，例如材料本身、电负性、以及非极性等。也就是说，绝缘胶体10的高电负性以及非极性，有助于提高绝缘颗粒20的击穿场强，从而有助于使绝缘颗粒20的击穿场强高于绝缘胶体10的击穿场强。但绝缘颗粒20的击穿场强高于绝缘胶体10的击穿场强，并不代表绝缘胶体10的电负性一定高于绝缘胶体10的电负性，且绝缘颗粒20一定为非极性。在某些实施例中，在绝缘胶体10的电负性低于绝缘胶体10的电负性，和/或绝缘颗粒20为极性的情况下，绝缘颗粒20的击穿场强也有高于绝缘胶体10的击穿场强。下面就本实施例中绝缘颗粒20的电负性和非极性分别讨论。
首先，绝缘颗粒20的电负性代表其吸附电子能力。当绝缘颗粒20的电负性高于绝缘胶体10的电负性时，绝缘颗粒20具有高电负性。相比于低电负性的情况而言，更高的电负性使得其具有较强的吸附电子能力，从而可以增加绝缘颗粒20周围介质的击穿电压，下面结合图5分析其具体原因。
请参阅图5，图5为本申请一些实施例提供的ESD电流在绝缘颗粒20周围介质的击穿路径示意图。为方便展示，图5中的绝缘颗粒20未填充。需要说明的是，绝缘颗 粒20周围的介质分为以下情况：
情况一：绝缘颗粒20周围的介质为空气间隙30。
请参阅图5中的(a)，当绝缘颗粒20与绝缘胶体10未完全贴合时，绝缘颗粒20与包裹该绝缘颗粒20的绝缘胶体10之间将存在微小的空气间隙30，在此情况下，绝缘颗粒20周围的介质为空气间隙30，ESD电流I5通过击穿该空气间隙30而继续行进。应理解，为了方便展示，该图对空气间隙30的尺寸进行了放大，实际实施过程中空气间隙30的尺寸比图示小很多。
空气间隙30的击穿过程是一个电子雪崩的过程。具体而言，请参阅图6，电子N1在电场作用下定向移动，当电场强度足够强时，电子N1将被加速而撞击中性的空气分子，电离出一个新的电子N2和新的离子(图中未示出)。同样的过程，电子N1和电子N2在电场作用下撞击中性的空气分子，电子N1电离出一个新的电子N3和新的离子(图中未示出)，电子N2则电离出一个新的电子N4和新的离子(图中未示出)。以此类推，将产生更多的电子和离子，从而电子数量和离子数量将雪崩似地增加。请继续参阅图5，当空气间隙30内的电子雪崩过程足够强，使得空气间隙30中的离子数量足够多时，空气间隙30将被击穿。
而本实施例中，由于绝缘颗粒20具有更高的吸附电子能力，大量电子被绝缘颗粒20的表面所吸附，使得空气间隙30中的电子数量减少。随着空气间隙30中的电子数量减少，空气间隙30中碰撞电离现象将减弱，从而使得空气间隙30中的离子数量骤减，该空气间隙30难以被击穿。应理解，电场强度越强，上述碰撞电离的现象越强，从而空气间隙30中的电子数量和离子数量越多。基于此，为了击穿绝缘颗粒20周围的空气间隙30，则需要提高电场强度。根据场强公式，在空隙间隙不变的情况下，则需要更强的击穿电压。
情况二：绝缘颗粒20周围的介质为绝缘胶体10。
请参阅图5中的(b)，当绝缘颗粒20与绝缘胶体10完全贴合时，绝缘胶体10将绝缘颗粒20紧紧包裹，在此情况下，绝缘颗粒20周围的介质为绝缘胶体10，ESD电流I6将击穿该绝缘胶体10而继续行进。
区别于图5中的(a)所示的空气间隙30的击穿，绝缘胶体10的击穿是固体的击穿。该击穿过程具体如下：当电场强度足够大时，电子N1在电场作用下定向移动，从一个势阱跑到另一个势阱，形成定向移动，从而撞击绝缘胶体10的固体分子，从而产生绝缘胶体10内的电子雪崩过程。该过程和发生在空气间隙30的类似，此处不再赘述。同理，当绝缘颗粒20具有更高的吸附电子能力，大量电子被绝缘颗粒20的表面所吸附，使得绝缘颗粒20周围的绝缘胶体10中的电子数量减少。随着电子数量减少，绝缘颗粒20周围的绝缘胶体10中碰撞电离将减弱，从而使得绝缘颗粒20周围的绝缘胶体10中的离子数量骤减，难以被击穿。基于此，为了击穿绝缘颗粒20周围的绝缘胶体10，则需要更强的击穿电压。
综上情况一和情况二的内容可知，当ESD电流流经绝缘颗粒20周围介质时，具有更高电负性的绝缘颗粒20的存在，使得需要更强的击穿电压才能击穿其周围介质。基于此，图3所示的绝缘胶01(即胶体层L2)的绝缘性能得以提升。
此外，请继续参阅图3，当绝缘颗粒20为非极性时，代表其极化率低，即在电场 作用下不易发生极化。相比于绝缘颗粒20为极性的情况而言，非极性的绝缘颗粒20将不会降低绝缘胶01的击穿电压，从而不会降低绝缘胶01的绝缘性能，下面结合图7分析其具体原因。
请参阅图7，图7示意了极性分子在电场作用下的极化示意图。通过图7可以发现，极化分子在外电场E0作用下被极化，从而呈现一端带正电、另一端带负电的状态。两两相邻的极性分子之间将形成和外电场E0方向相同的内电场E1。
针对于本实施例而言，请继续参阅图3，当ESD电流沿X1方向击穿胶体层L2时，外电场E0的方向为X1方向。当绝缘颗粒20为极性时，则两两相邻的绝缘颗粒20之间将产生与击穿场强方向相同的内电场E1，即X1方向的内电场E1。在此情况下，胶体层L2沿X1方向的总电场为内电场E1和外电场E0之和，使得胶体层L2更容易击穿，削弱胶体层L2沿X1方向的绝缘性能。当绝缘颗粒20为非极性时，将不会产生内电场E1，从而不会削弱胶体层L2沿X1方向的绝缘性能。
通过上述分析可见，绝缘颗粒20的电负性和非极性对于保证胶体层L2的绝缘性能均产生了效果。基于此，绝缘颗粒20的电负性和非极性的构思可以分别在单独的实施例中进行实施，即在一些实施例中，绝缘颗粒20的电负性高于绝缘胶体10的电负性，而无需绝缘颗粒20为非极性。在此情况下，绝缘颗粒20的材料可以包括偏氟乙烯聚合物、偏氟乙烯共聚物、三氟氯乙烯聚合物、或三氟氯乙烯共聚物。在另一些实施例中，绝缘颗粒20为非极性，而无需绝缘颗粒20的电负性高于绝缘胶体10的电负性。在此情况下，绝缘颗粒20可以由前述有机绝缘材料中击穿场强大于绝缘胶体10的击穿场强的材料制成。本申请实施例对此不作具体限定。
在本申请的一些实施例中，请继续参阅图3，为了保证胶体层L2的强度和粘性，绝缘颗粒20的直径小于或等于胶体层L2的直径的十分之一。示例性地，绝缘颗粒20的直径可以为胶体层L2的直径的十分之一，也可以为胶体层L2的十一分之一。
应理解，绝缘颗粒20的直径不宜过大。若绝缘颗粒20的直径过大，分布在胶体层L2的表面的不具备粘性的绝缘颗粒20，将使得胶体层L2的表面粘性过低；分布在胶体层L2内的不具备粘性的绝缘颗粒20，将不容易和绝缘胶体10粘合，导致胶体层L2的整体强度较低。并且，两两绝缘颗粒20之间的绝缘胶体10较薄，导致胶体层L2在Z1方向上容易开裂。
在本申请的另一些实施例中，请继续参阅图3，为了保证胶体层L2的强度和粘性，绝缘颗粒20与绝缘胶体10的质量比为30％至60％。示例性地，绝缘颗粒20与绝缘胶体10的质量比为30％、45％、50％、55％、60％。
应理解，绝缘颗粒20的掺杂比例不宜过高，也不宜过低。由于绝缘颗粒20不具备粘性，当掺杂比例过高时，绝缘胶的粘性和强度将降低。当掺杂比例过低时，对于绝缘胶的绝缘性能的改善效果不明显。本实施例中，控制绝缘颗粒20与绝缘胶体10的质量比为30％至60％，一方面可以保证绝缘胶的粘性和强度，另一方面还可以保障绝缘胶的绝缘性能。
需要说明的是，图3以绝缘胶带00包括两层薄膜层为例进行了说明。在其他实施例中，绝缘胶带00也可以仅包括一层薄膜层。请参阅图8，绝缘胶带00包括第一薄膜层L1、以及胶体层L2。其中，胶体层L2层叠于第一薄膜层L1上。第一薄膜层L1 和胶体层L2的具体实施可以参照图3所示的相关内容，此处不再赘述。实际生产过程中，该绝缘胶带00可以通过裹卷的方式进行生产，类似于市面上的透明胶的裹卷的方式。实际使用过程中，使用者通过揭开第一薄膜层L1，可以使用胶体层L2进行双面粘接；当然，也可以直接使用带第一薄膜层L1的胶体层L2进行单面粘接。
为了获得上述各实施例所示的绝缘胶，本申请实施例还提供了一种绝缘胶的制备方法。请参阅图9，该绝缘胶的制备方法包括：
S901，将绝缘胶体加工至熔融态。
S902，将绝缘颗粒掺杂至熔融态的绝缘胶体中并混合，获得待处理绝缘胶；其中，绝缘颗粒的击穿场强大于绝缘胶体的击穿场强，且绝缘颗粒为高电负性非极性绝缘颗粒。
S903，对待处理绝缘胶进行冷却处理。
S904，获得绝缘胶。
具体实施过程中，根据绝缘胶的类型不同，在对待处理绝缘胶进行冷却处理之后，还可以适应性地进行其他加工处理，以获得所需的绝缘胶。举例来说，若绝缘胶为泡棉胶，在S903之后，S904之前还可以进行发泡处理，然后进行定型加工，获得绝缘胶。若绝缘胶不是泡棉胶，在S903之后，S904之前直接进行定型加工，获得绝缘胶。需要说明的是绝缘胶体和绝缘颗粒的材质、质量比、绝缘颗粒的直径已经在图3的相关实施例中进行了详细说明，可以参照实施例，此处不再赘述。
以上所述，仅为本申请实施例的具体实施方式，但本申请实施例的保护范围并不局限于此，任何在本申请实施例揭露的技术范围内的变化或替换，都应涵盖在本申请实施例的保护范围之内。因此，本申请实施例的保护范围应以所述权利要求的保护范围为准。

Claims (13)

  1. 一种绝缘胶，其特征在于，包括：
    绝缘胶体；
    绝缘颗粒，掺杂于所述绝缘胶体内的绝缘颗粒；其中，所述绝缘颗粒的击穿场强大于所述绝缘胶体的击穿场强，且所述绝缘颗粒为高电负性非极性绝缘微粒。
  2. 根据权利要求1所述的绝缘胶，其特征在于，所述绝缘胶体的材料包括橡胶或塑料。
  3. 根据权利要求2所述的绝缘胶，其特征在于，用于掺杂形成所述绝缘颗粒的绝缘材料包括四氟乙烯和/或四氟乙烯聚合物。
  4. 根据权利要求3所述的绝缘胶，其特征在于，所述四氟乙烯聚合物包括聚四氟乙烯、四氟乙烯－六氟丙烯共聚物、全氟丙基全氟乙烯基醚－聚四氟乙烯共聚物中的一种或多种。
  5. 根据权利要求1至4任一项所述的绝缘胶，其特征在于，所述绝缘颗粒与所述绝缘胶体的质量比为30％至60％。
  6. 一种绝缘胶带，其特征在于，包括：
    第一薄膜层；
    胶体层，层叠于所述第一薄膜层上；所述胶体层由权利要求1至5任一项所述的绝缘胶制成。
  7. 根据权利要求6所述的绝缘胶带，其特征在于，所述绝缘颗粒的直径小于或等于所述胶体层的厚度的十分之一。
  8. 根据权利要求6或7所述的绝缘胶带，其特征在于，还包括第二薄膜层；
    所述第二薄膜层层叠于所述胶体层远离所述第一薄膜层的表面。
  9. 一种绝缘胶的制备方法，其特征在于，包括：
    将绝缘胶体加工至熔融态；
    将绝缘颗粒掺杂至熔融态的所述绝缘胶体中并混合，获得待处理绝缘胶；其中，所述绝缘颗粒的击穿场强大于所述绝缘胶体的击穿场强，且所述绝缘颗粒为高电负性非极性绝缘微粒；
    对所述待处理绝缘胶进行冷却处理；
    获得绝缘胶。
  10. 根据权利要求9所述的绝缘胶的制备方法，其特征在于，所述绝缘胶体的材料包括橡胶或塑料。
  11. 根据权利要求10所述的绝缘胶的制备方法，其特征在于，用于掺杂形成所述绝缘颗粒的绝缘材料包括四氟乙烯和/或四氟乙烯聚合物。
  12. 根据权利要求11所述的绝缘胶的制备方法，其特征在于，所述四氟乙烯聚合物包括聚四氟乙烯、四氟乙烯－六氟丙烯共聚物、全氟丙基全氟乙烯基醚-聚四氟乙烯共聚物中的一种或多种。
  13. 根据权利要求9至12任一项所述的绝缘胶的制备方法，其特征在于，所述绝缘颗粒和所述绝缘胶体的质量比为30％至60％。
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