WO2023044942A1 - Tft基板、液晶显示面板、显示模组及电子设备 - Google Patents

Tft基板、液晶显示面板、显示模组及电子设备 Download PDF

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Publication number
WO2023044942A1
WO2023044942A1 PCT/CN2021/121364 CN2021121364W WO2023044942A1 WO 2023044942 A1 WO2023044942 A1 WO 2023044942A1 CN 2021121364 W CN2021121364 W CN 2021121364W WO 2023044942 A1 WO2023044942 A1 WO 2023044942A1
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Prior art keywords
tft substrate
wire
layer
liquid crystal
electrode
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PCT/CN2021/121364
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English (en)
French (fr)
Inventor
王无悔
刘梦阳
Original Assignee
惠州华星光电显示有限公司
深圳市华星光电半导体显示技术有限公司
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Application filed by 惠州华星光电显示有限公司, 深圳市华星光电半导体显示技术有限公司 filed Critical 惠州华星光电显示有限公司
Priority to US17/613,960 priority Critical patent/US20240027861A1/en
Publication of WO2023044942A1 publication Critical patent/WO2023044942A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements

Definitions

  • the present application relates to the field of display technology, in particular to a TFT substrate, a liquid crystal display panel, a display module and electronic equipment.
  • LCD Liquid Crystal Display
  • OLED Organic Light Emitting Diode
  • a liquid crystal display device includes a housing, a liquid crystal display panel disposed in the housing, and a backlight module disposed in the housing.
  • the structure of the liquid crystal display panel is mainly composed of two glass substrates and a liquid crystal layer (Liquid Crystal Layer) arranged between the two glass substrates. Its working principle is to control the rotation of liquid crystal molecules in the liquid crystal layer by applying a driving voltage. , to refract the light from the backlight module to generate a picture.
  • the existing liquid crystal display panel usually adopts the sharebar (preset electrode) design, that is, the Pixel (pixel) is divided into main-Pixel (main pixel) and Sub-Pixel (sub-pixel), and is pulled down through the Sharebar. Sub-Pixel voltage.
  • Embodiments of the present application provide a TFT substrate, a liquid crystal display panel, a display module and electronic equipment to solve the abnormal display problem that occurs when the common electrode and the preset electrode are short-circuited.
  • an embodiment of the present application provides a TFT substrate, the display area of the TFT substrate is provided with a plurality of pixels, and the pixels include a main pixel area and a sub-pixel area;
  • the main pixel area is provided with a first transistor
  • the sub-pixel area is provided with a second transistor, a third transistor and a preset electrode
  • the source of the third transistor is connected to the drain of the second transistor
  • the The drain of the third transistor is connected to the preset electrode
  • the TFT substrate also includes a common electrode and a line connector, the common electrode corresponds to a plurality of pixel settings, the preset electrode and the common electrode are both connected to the line connector, and the line connector is used to connect to the The same voltage signal is introduced into the preset electrode and the common electrode.
  • a first wire, a second wire, and a third wire are provided between the line connector, the preset electrode, and the common electrode, and the first wire has a first end and a first end opposite to each other. a second end, the second wire has a third end and a fourth end oppositely arranged, and the third wire has a fifth end and a sixth end oppositely arranged;
  • the first end of the first wire is connected to the line connector, the third end of the second wire is connected to the preset electrode, and the fifth end of the third wire is connected to the common An electrode, the second end of the first wire, the fourth end of the second wire and the sixth end of the third wire are connected together.
  • the TFT substrate includes a base substrate, a first metal layer, a first insulating layer, a semiconductor layer, and a second metal layer that are sequentially stacked; wherein, the first metal layer includes gates arranged at intervals. and a common electrode; the second metal layer includes source electrodes, drain electrodes and preset electrodes arranged at intervals.
  • the semiconductor layer includes a channel region and a source contact region and a drain contact region respectively located on both sides of the channel region, the channel region includes an amorphous silicon layer, and the source Both the contact region and the drain contact region include a laminated amorphous silicon layer and an N-type doped amorphous silicon layer.
  • the TFT substrate further includes a color filter layer disposed on the side of the second insulating layer away from the second metal layer, and a color filter layer disposed on the side of the color filter layer away from the second insulating layer.
  • Protective layer on one side.
  • the material of the protective layer includes soluble polytetrafluoroethylene.
  • an embodiment of the present application provides a liquid crystal display panel, the liquid crystal display panel includes a TFT substrate and a first substrate disposed opposite to each other, and a liquid crystal layer disposed between the TFT substrate and the first substrate.
  • the TFT substrate is the above-mentioned TFT substrate.
  • the embodiment of the present application provides a display module, the display module includes the above-mentioned liquid crystal display panel.
  • the display module further includes a touch screen, and the touch screen is stacked with the liquid crystal display panel.
  • an embodiment of the present application provides an electronic device, where the electronic device includes the above-mentioned display module.
  • the external power supply can input the same voltage signal to the preset electrode and the common electrode through the wire connector.
  • the voltage signal on the preset electrode and the voltage signal on the common electrode will remain the same, thereby avoiding that the voltage signal on the preset electrode is pulled down As a result, abnormal display conditions such as vertical gradient lines appear on the display screen.
  • the total wiring design required for the voltage signal input of the preset electrode and the voltage signal input of the common electrode can also be reduced , which is conducive to reducing the production cost of the TFT substrate and increasing the production capacity, and because the peripheral wiring of the TFT substrate is reduced, the probability of defective peripheral circuits can also be reduced, which is conducive to improving the production yield of the TFT substrate.
  • FIG. 1 is a schematic connection diagram of some structures in a TFT substrate provided in an embodiment of the present application.
  • FIG. 2 is a schematic cross-sectional structure diagram of a TFT substrate provided by an embodiment of the present application.
  • FIG. 3 is a schematic cross-sectional structure diagram of a liquid crystal display panel provided by an embodiment of the present application.
  • FIG. 4 is a schematic cross-sectional structure diagram of a display module provided by an embodiment of the present application.
  • FIG. 1 is a schematic connection diagram of some structures in the TFT substrate provided by the embodiment of the present application
  • FIG. 2 is a schematic cross-sectional structure diagram of the TFT substrate provided by the embodiment of the present application.
  • the embodiment of this application provides a TFT (Thin A Film Transistor (thin film transistor) substrate 110, a display area of the TFT substrate 110 is provided with a plurality of pixels, and the pixels include a main pixel area and a sub-pixel area.
  • TFT Thin A Film Transistor
  • the main pixel area is provided with a first transistor
  • the sub-pixel area is provided with a second transistor
  • the source of the third transistor is connected to the drain of the second transistor
  • the drain of the third transistor The pole is connected to the preset electrode 225. It can be understood that by arranging a third transistor in the sub-pixel region, part of the voltage of the sub-pixel region is released to the preset electrode 225, so as to achieve different voltages between the main pixel region and the sub-pixel region, and further make the main pixel region and the sub-pixel region Differences in rotation angles of liquid crystal molecules are generated between pixel areas to improve viewing angles and increase contrast.
  • the voltage signal of the main pixel area is higher than the voltage signal of the sub-pixel area, so when the TFT substrate 110 is applied in the liquid crystal display panel 100, the brightness of the sub-pixel area is lower than the brightness of the main pixel area .
  • the TFT substrate 110 also includes a common electrode (Array com) 215 and line connector 70, the common electrode 215 corresponds to multiple pixel settings, the preset electrode 225 and the common electrode 215 are both connected to the line connector 70, and the line connector 70 is used to introduce the same voltage signal.
  • Array com common electrode
  • the line joint 70 can be used to connect an external power supply or an external line, and the external power supply or external line can input a voltage signal into the line joint 70, so that the voltage signal can be transmitted to the preset electrode 225 and the common electrode 225 via the line joint 70. electrode 215.
  • the TFT substrate 110 includes a display area and a non-display area, and the line connector 70 is arranged in the non-display area, so a part of the connection wire between the line joint 70, the preset electrode 225 and the common electrode 215 is located in the non-display area In, that is part of the peripheral routing.
  • the line connector 70 may be a metal sheet or a metal block.
  • the material of the line connector 70 may include one of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), tungsten (W), chromium (Cr), nickel (Ni) one or more species.
  • the TFT substrate 110 is further provided with a pixel electrode (not shown), and there is a voltage difference between the pixel electrode and the common electrode 215, and the voltage difference is used to drive the liquid crystal molecules to rotate.
  • the external power supply can input the same In this case, even if there is a short circuit between the preset electrode 225 and the common electrode 215, the voltage signal on the preset electrode 225 and the voltage signal on the common electrode 215 will remain the same , so as to avoid abnormal display situations such as vertical gradient lines on the display screen caused by the voltage signal on the preset electrode 225 being pulled down.
  • the voltage signal input of the preset electrode 225 and the voltage signal input of the common electrode 215 can also be reduced.
  • the overall routing design is conducive to reducing the production cost of the TFT substrate 110 and increasing production capacity, and because the peripheral routing of the TFT substrate 110 is reduced, the probability of defective peripheral circuits can also be reduced, which is conducive to improving the production yield of the TFT substrate 110 .
  • a first wire 81, a second wire 82, and a third wire 83 can be arranged between the line connector 70, the preset electrode 225 and the common electrode 215, and the first wire 81 has a first end and a second end oppositely arranged. end, the second wire 82 has a third end and a fourth end oppositely arranged, and the third wire 83 has a fifth end and a sixth end oppositely arranged;
  • the first end of the first wire 81 is connected to the line connector 70, the third end of the second wire 82 is connected to the preset electrode 225, the fifth end of the third wire 83 is connected to the common electrode 215, the second end of the first wire 81, the second The fourth end of the two wires 82 and the sixth end of the third wire 83 are connected together.
  • the TFT substrate 110 may include a base substrate 10 , a first metal layer 21 , a first insulating layer 31 , a semiconductor layer 40 , a second metal layer 22 and a second insulating layer 32 which are sequentially stacked; wherein, the first A metal layer 21 includes a gate electrode and a common electrode 215 arranged at intervals; a second metal layer 22 includes a source electrode, a drain electrode and a preset electrode 225 arranged at intervals.
  • a plurality of pixels may be arranged in an array, and the preset electrodes 225 provided in each column of pixels may be connected together, or the preset electrodes 225 provided in each row of pixels may be connected together.
  • the base substrate 10 may be a glass substrate.
  • the material of the first metal layer 21 may include one of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), tungsten (W), chromium (Cr), and nickel (Ni). one or more species.
  • the material of the first insulating layer 31 may include one or more of silicon oxide (SiO x ) and silicon nitride (SiN x ).
  • the material of the second metal layer 22 may include one of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), tungsten (W), chromium (Cr), and nickel (Ni). one or more species.
  • the material of the second insulating layer 32 may include one or more of silicon oxide (SiO x ) and silicon nitride (SiN x ).
  • the semiconductor layer 40 may include a channel region and a source contact region and a drain contact region respectively located on both sides of the channel region, the channel region includes an amorphous silicon (a-Si) layer, the source contact region and The drain contact regions all include an amorphous silicon layer and an N-type doped amorphous silicon layer which are stacked.
  • a-Si amorphous silicon
  • N-type doping refers to doping pentavalent elements, such as phosphorus and arsenic, into amorphous silicon.
  • the TFT substrate 110 may also include a color filter layer 50 disposed on the side of the second insulating layer 32 facing away from the second metal layer 22 and a protection shield disposed on the side of the color filter layer 50 facing away from the second insulating layer 32 .
  • Layer 60 a color filter layer 50 disposed on the side of the second insulating layer 32 facing away from the second metal layer 22 and a protection shield disposed on the side of the color filter layer 50 facing away from the second insulating layer 32 .
  • the color filter layer 50 may include a red filter, a green filter, and a blue filter, and the white backlight is formed by passing through the red filter, the green filter, and the blue filter respectively. After mixing red light, green light, and blue light in different proportions and strengths, various color changes can be produced.
  • the material of the protective layer 60 may include soluble polytetrafluoroethylene (PFA).
  • PFA soluble polytetrafluoroethylene
  • the protective layer 60 can protect the color filter layer 50 and other structural layers inside the TFT substrate 110 .
  • the line connector 70 may be disposed on the surface of the non-display area of the base substrate 10 , for example, the wire connector 70 may be disposed on the side surface of the base substrate 10 where the TFT device is disposed.
  • FIG. 3 is a schematic cross-sectional structure diagram of a liquid crystal display panel provided by an embodiment of the present application.
  • the embodiment of the present application also provides a liquid crystal display panel 100.
  • the liquid crystal display panel 100 may include a TFT substrate 110 and a first substrate 120 disposed opposite to each other, and a liquid crystal layer 130 disposed between the TFT substrate 110 and the first substrate 120.
  • the TFT substrate 110 may be the TFT substrate 110 in any of the above-mentioned embodiments.
  • the first substrate 120 may be a glass substrate.
  • FIG. 4 is a schematic cross-sectional structure diagram of a display module provided by an embodiment of the present application.
  • the embodiment of the present application also provides a display module 200, which may include the liquid crystal display panel 100 in any of the above-mentioned embodiments.
  • the display module 200 may further include a touch screen 210 , and the touch screen 210 is stacked with the liquid crystal display panel 100 .
  • the touch screen 210 can be arranged on the side of the light-emitting surface of the liquid crystal display panel 100, and the touch screen 210 can be used to detect touch information, and convert the touch information into contact coordinates and send them to the CPU (central processing unit, central processing unit), and can receive and execute commands from the CPU at the same time.
  • the CPU central processing unit, central processing unit
  • the display module 200 may further include a backlight module, and the backlight module may be disposed on the side of the light incident surface of the liquid crystal display panel 100 .
  • the embodiment of the present application also provides an electronic device, which may include the display module 200 in any of the above embodiments.
  • the electronic device may be a TV, a mobile phone, a tablet computer, a desktop computer, a game device, an augmented reality (Augmented Reality, AR) device, a virtual reality (Virtual Reality, VR) device, a data storage device, an audio playback device, a video Playing devices, wearable devices and other devices with display screens, where the wearable devices can be smart bracelets, smart glasses, smart watches, smart decorations, etc.
  • AR Augmented Reality
  • VR Virtual Reality
  • a data storage device a data storage device
  • an audio playback device a video Playing devices
  • wearable devices can be smart bracelets, smart glasses, smart watches, smart decorations, etc.

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Abstract

一种TFT基板(110)、液晶显示面板(100)、显示模组(200)及电子设备。TFT基板(110)，通过将预设电极(225)和公共电极(215)设置为与同一个线路接头(70)连接，当预设电极(225)和公共电极(215)之间出现短路的情况时，能够避免由于预设电极(215)上的电压信号被拉低而导致的显示屏出现垂直渐变线等异常显示情况。

Description

TFT基板、液晶显示面板、显示模组及电子设备 技术领域
本申请涉及显示技术领域，特别涉及一种TFT基板、液晶显示面板、显示模组及电子设备。
 背景技术
在显示技术领域，液晶显示器（Liquid Crystal Display，LCD）与有机发光二极管显示器（Organic Light Emitting Diode，OLED）等平板显示器已经逐步取代CRT显示器。
通常液晶显示装置包括壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组（Backlight module）。其中，液晶显示面板的结构主要是由两片玻璃基板以及配置于两片玻璃基板间的液晶层（Liquid Crystal Layer）所构成，其工作原理是通过施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
 技术问题
现有的液晶显示面板为了扩大面板视角，增加对比度，通常采用sharebar（预设电极）设计，即Pixel（像素）分main-Pixel（主像素）和Sub-Pixel（子像素），通过Sharebar拉低Sub-Pixel的电压。由于Sharebar下方设置有Array com（阵列基板侧的公共电极），因此当有Sharebar与Array com之间存在异物时，Sharebar与Array com之间容易发生短路，由于Array com上的电压信号通常低于Sharebar上的电压信号，因此当Sharebar与Array com发生短路时通常会导致Sharebar上的电压信号被拉低，进而导致液晶显示面板上出现垂直渐变线等异常显示情况。
 技术解决方案
本申请实施例提供一种TFT基板、液晶显示面板、显示模组及电子设备，以解决公共电极和预设电极短路时出现的异常显示问题。
第一方面，本申请实施例提供一种TFT基板，所述TFT基板的显示区域设有多个像素，所述像素包括主像素区和子像素区；
所述主像素区设有第一晶体管，所述子像素区设有第二晶体管、第三晶体管以及预设电极，所述第三晶体管的源极与所述第二晶体管的漏极连接，所述第三晶体管的漏极与所述预设电极连接；
所述TFT基板还包括公共电极和线路接头，所述公共电极对应多个所述像素设置，所述预设电极和所述公共电极均与所述线路接头连接，所述线路接头用于向所述预设电极和所述公共电极中引入相同的电压信号。
在一些实施例中，所述线路接头、所述预设电极以及所述公共电极之间设有第一导线、第二导线、第三导线，所述第一导线具有相对设置的第一端和第二端，所述第二导线具有相对设置的第三端和第四端，所述第三导线具有相对设置的第五端和第六端；
所述第一导线的所述第一端连接所述线路接头，所述第二导线的所述第三端连接所述预设电极，所述第三导线的所述第五端连接所述公共电极，所述第一导线的所述第二端、所述第二导线的所述第四端以及所述第三导线的所述第六端连接在一起。
在一些实施例中，所述TFT基板包括依次层叠设置的衬底基板、第一金属层、第一绝缘层、半导体层以及第二金属层；其中，所述第一金属层包括间隔设置的栅极和公共电极；所述第二金属层包括间隔设置的源极、漏极以及预设电极。
在一些实施例中，所述半导体层包括沟道区以及分别位于所述沟道区两侧的源极接触区和漏极接触区，所述沟道区包括非晶硅层，所述源极接触区和所述漏极接触区均包括层叠设置的非晶硅层和N型掺杂非晶硅层。
在一些实施例中，所述TFT基板还包括设于所述第二绝缘层背离所述第二金属层一侧的彩色滤光层以及设于所述彩色滤光层背离所述第二绝缘层一侧的保护层。
在一些实施例中，所述保护层的材料包括可溶性聚四氟乙烯。
第二方面，本申请实施例提供一种液晶显示面板，所述液晶显示面板包括相对设置的TFT基板与第一基板以及设于所述TFT基板与所述第一基板之间的液晶层，所述TFT基板为上述TFT基板。
第三方面，本申请实施例提供一种显示模组，所述显示模组包括上述液晶显示面板。
在一些实施例中，所述显示模组还包括触控屏，所述触控屏与所述液晶显示面板层叠设置。
第三方面，本申请实施例提供一种电子设备，所述电子设备包括上述显示模组。
 有益效果
本申请实施例提供的TFT基板，通过将预设电极和公共电极设置为与同一个线路接头连接，可以使外部电源经由线路接头向预设电极和公共电极中输入相同的电压信号，在这种情况下，即使预设电极和公共电极之间出现短路的情况，预设电极上的电压信号和公共电极上的电压信号也会保持相同，从而能够避免由于预设电极上的电压信号被拉低而导致的显示屏出现垂直渐变线等异常显示情况。另外，通过将预设电极和公共电极设置为连接同一个线路接头，与现有技术相比，还可以减少预设电极的电压信号输入和公共电极的电压信号输入所需要的总的走线设计，有利于降低TFT基板的生产成本，提升产能，并且由于TFT基板的外围走线减少，还可以降低外围线路发生不良的概率，有利于提升TFT基板的生产良率。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单的介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对本领域技术人员来说，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
为了更完整地理解本申请及其有益效果，下面将结合附图来进行说明。其中，在下面的描述中相同的附图标号表示相同部分。
图1为本申请实施例提供的TFT基板中的部分结构的连接示意图。
图2为本申请实施例提供的TFT基板的剖视结构示意图。
图3为本申请实施例提供的液晶显示面板的剖视结构示意图。
图4为本申请实施例提供的显示模组的剖视结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请参阅图1与图2，图1为本申请实施例提供的TFT基板中的部分结构的连接示意图，图2为本申请实施例提供的TFT基板的剖视结构示意图。本申请实施例提供一种TFT（Thin Film Transistor，薄膜晶体管）基板110，TFT基板110的显示区域设有多个像素，像素包括主像素区和子像素区。
主像素区设有第一晶体管，子像素区设有第二晶体管、第三晶体管以及预设电极（Sharebar）225，第三晶体管的源极与第二晶体管的漏极连接，第三晶体管的漏极与预设电极225连接。可以理解的是，通过在子像素区中设置第三晶体管，将该子像素区的部分电压释放到预设电极225上，以实现主像素区和子像素区的电压不同，进而使主像素区和子像素区之间产生液晶分子转动角度的差异，以改善视角和增加对比度。示例性地，在一个像素中，主像素区的电压信号高于子像素区的电压信号，因此当该TFT基板110应用于液晶显示面板100中时，子像素区的亮度小于主像素区的亮度。
请结合图1，TFT基板110还包括公共电极（Array com）215和线路接头70，公共电极215对应多个像素设置，预设电极225和公共电极215均与线路接头70连接，线路接头70用于向预设电极225和公共电极215中引入相同的电压信号。
可以理解的是，线路接头70可以用于连接外部电源或者外部线路，外部电源或者外部线路可以向线路接头70中输入电压信号，从而使电压信号可以经由线路接头70传输至预设电极225和公共电极215中。
可以理解的是，TFT基板110包括显示区域和非显示区域，线路接头70设置在非显示区域中，因此线路接头70、预设电极225以及公共电极215之间的连接导线的一部分位于非显示区域中，即属于外围走线的一部分。
示例性地，线路接头70可以为金属片或金属块。在一些实施例中，线路接头70的材料可以包括钼（Mo）、铝（Al）、铜（Cu）、钛（Ti）、钨（W）、铬（Cr）、镍（Ni）中的一种或多种。
可以理解的是，TFT基板110上还设有像素电极（未图示），像素电极与公共电极215之间具有电压差，该电压差用于驱动液晶分子转动。
本申请实施例提供的TFT基板110，通过将预设电极225和公共电极215设置为与同一个线路接头70连接，可以使外部电源经由线路接头70向预设电极225和公共电极215中输入相同的电压信号，在这种情况下，即使预设电极225和公共电极215之间有异物存在导致出现短路的情况，预设电极225上的电压信号和公共电极215上的电压信号也会保持相同，从而能够避免由于预设电极225上的电压信号被拉低而导致的显示屏出现垂直渐变线等异常显示情况。另外，通过将预设电极225和公共电极215设置为连接同一个线路接头70，与现有技术相比，还可以减少预设电极225的电压信号输入和公共电极215的电压信号输入所需要的总的走线设计，有利于降低TFT基板110的生产成本，提升产能，并且由于TFT基板110的外围走线减少，还可以降低外围线路发生不良的概率，有利于提升TFT基板110的生产良率。
请结合图1，线路接头70、预设电极225以及公共电极215之间可以设置第一导线81、第二导线82、第三导线83，第一导线81具有相对设置的第一端和第二端，第二导线82具有相对设置的第三端和第四端，第三导线83具有相对设置的第五端和第六端；
第一导线81的第一端连接线路接头70，第二导线82的第三端连接预设电极225，第三导线83的第五端连接公共电极215，第一导线81的第二端、第二导线82的第四端以及第三导线83的第六端连接在一起。
请结合图2，TFT基板110可以包括依次层叠设置的衬底基板10、第一金属层21、第一绝缘层31、半导体层40、第二金属层22以及第二绝缘层32；其中，第一金属层21包括间隔设置的栅极和公共电极215；第二金属层22包括间隔设置的源极、漏极以及预设电极225。
示例性地，多个像素可以呈阵列排布，每一列像素中设置的预设电极225可以连接在一起，或者每一行像素中设置的预设电极225可以连接在一起。
示例性地，衬底基板10可以为玻璃基板。
示例性地，第一金属层21的材料可以包括钼（Mo）、铝（Al）、铜（Cu）、钛（Ti）、钨（W）、铬（Cr）、镍（Ni）中的一种或多种。
示例性地，第一绝缘层31的材料可以包括氧化硅（SiO x）与氮化硅（SiN x）中的一种或多种。
示例性地，第二金属层22的材料可以包括钼（Mo）、铝（Al）、铜（Cu）、钛（Ti）、钨（W）、铬（Cr）、镍（Ni）中的一种或多种。
示例性地，第二绝缘层32的材料可以包括氧化硅（SiO x）与氮化硅（SiN x）中的一种或多种。
示例性地，半导体层40可以包括沟道区以及分别位于沟道区两侧的源极接触区和漏极接触区，沟道区包括非晶硅（a-Si）层，源极接触区和漏极接触区均包括层叠设置的非晶硅层和N型掺杂非晶硅层。可以理解的是，N型掺杂指的是向非晶硅中掺杂五价元素，例如磷、砷等。
请结合图2，TFT基板110还可以包括设于第二绝缘层32背离第二金属层22一侧的彩色滤光层50以及设于彩色滤光层50背离第二绝缘层32一侧的保护层60。
示例性地，彩色滤光层50可以包括红色滤光片、绿色滤光片、蓝色滤光片，白色背光分别穿过红色滤光片、绿色滤光片、蓝色滤光片后形成的红光、绿光、蓝光按照不同比例和强弱混合后，可以产生各种色彩变化。
示例性地，保护层60的材料可以包括可溶性聚四氟乙烯（PFA）。保护层60可以保护彩色滤光层50以及TFT基板110内部的其它结构层。
在一些实施例中，线路接头70可以设置在衬底基板10的非显示区域的表面，例如，将线路接头70设置在衬底基板10上设有TFT器件的一侧表面。
请参阅图3，图3为本申请实施例提供的液晶显示面板的剖视结构示意图。本申请实施例还提供一种液晶显示面板100，液晶显示面板100可以包括相对设置的TFT基板110与第一基板120以及设于TFT基板110与第一基板120之间的液晶层130，TFT基板110可以为上述任一实施例中的TFT基板110。
示例性地，第一基板120可以为玻璃基板。
请参阅图4，图4为本申请实施例提供的显示模组的剖视结构示意图。本申请实施例还提供一种显示模组200，显示模组200可以包括上述任一实施例中的液晶显示面板100。
显示模组200还可以包括触控屏210，触控屏210与液晶显示面板100层叠设置。
示例性地，触控屏210可以设置在液晶显示面板100的出光面一侧，触控屏210可以用于检测触摸信息，并将触摸信息转换成触点坐标传送给CPU（central processing unit，中央处理器），同时能接收CPU发来的命令并加以执行。
示例性地，显示模组200还可以包括背光模组，背光模组可以设置在液晶显示面板100的入光面一侧。
本申请实施例还提供一种电子设备，电子设备可以包括上述任一实施例中的显示模组200。
示例性地，电子设备可以是电视、手机、平板电脑、台式电脑、游戏设备、增强现实（Augmented Reality，AR）设备、虚拟现实（Virtual Reality，VR）设备、数据存储装置、音频播放装置、视频播放装置、可穿戴设备等具有显示屏的设备，其中可穿戴设备可以是智能手环、智能眼镜、智能手表、智能装饰等。
以上对本申请实施例提供的TFT基板、液晶显示面板、显示模组及电子设备进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种TFT基板，其中，所述TFT基板的显示区域设有多个像素，所述像素包括主像素区和子像素区；
    所述主像素区设有第一晶体管，所述子像素区设有第二晶体管、第三晶体管以及预设电极，所述第三晶体管的源极与所述第二晶体管的漏极连接，所述第三晶体管的漏极与所述预设电极连接；
    所述TFT基板还包括公共电极和线路接头，所述公共电极对应多个所述像素设置，所述预设电极和所述公共电极均与所述线路接头连接，所述线路接头用于向所述预设电极和所述公共电极中引入相同的电压信号。
  2. 根据权利要求1所述的TFT基板，其中，所述线路接头、所述预设电极以及所述公共电极之间设有第一导线、第二导线、第三导线，所述第一导线具有相对设置的第一端和第二端，所述第二导线具有相对设置的第三端和第四端，所述第三导线具有相对设置的第五端和第六端；
    所述第一导线的所述第一端连接所述线路接头，所述第二导线的所述第三端连接所述预设电极，所述第三导线的所述第五端连接所述公共电极，所述第一导线的所述第二端、所述第二导线的所述第四端以及所述第三导线的所述第六端连接在一起。
  3. 根据权利要求1所述的TFT基板，其中，所述TFT基板包括依次层叠设置的衬底基板、第一金属层、第一绝缘层、半导体层、第二金属层以及第二绝缘层；其中，所述第一金属层包括间隔设置的栅极和公共电极；所述第二金属层包括间隔设置的源极、漏极以及预设电极。
  4. 根据权利要求3所述的TFT基板，其中，所述半导体层包括沟道区以及分别位于所述沟道区两侧的源极接触区和漏极接触区，所述沟道区包括非晶硅层，所述源极接触区和所述漏极接触区均包括层叠设置的非晶硅层和N型掺杂非晶硅层。
  5. 根据权利要求3所述的TFT基板，其中，所述TFT基板还包括设于所述第二绝缘层背离所述第二金属层一侧的彩色滤光层以及设于所述彩色滤光层背离所述第二绝缘层一侧的保护层。
  6. 根据权利要求5所述的TFT基板，其中，所述保护层的材料包括可溶性聚四氟乙烯。
  7. 根据权利要求1所述的TFT基板，其中，所述TFT基板包括显示区域和非显示区域，所述线路接头设置在所述非显示区域中。
  8. 根据权利要求3所述的TFT基板，其中，所述衬底基板为玻璃基板。
  9. 根据权利要求3所述的TFT基板，其中，所述第一金属层的材料包括钼、铝、铜、钛、钨、铬、镍中的一种或多种。
  10. 根据权利要求3所述的TFT基板，其中，所述第一绝缘层的材料包括氧化硅与氮化硅中的一种或多种。
  11. 根据权利要求3所述的TFT基板，其中，所述第二金属层的材料包括钼、铝、铜、钛、钨、铬、镍中的一种或多种。
  12. 根据权利要求3所述的TFT基板，其中，所述第二绝缘层的材料包括氧化硅与氮化硅中的一种或多种。
  13. 根据权利要求3所述的TFT基板，其中，所述半导体层包括沟道区以及分别位于沟道区两侧的源极接触区和漏极接触区，所述沟道区包括非晶硅层，所述源极接触区和所述漏极接触区均包括层叠设置的非晶硅层和N型掺杂非晶硅层。
  14. 一种液晶显示面板，其中，包括相对设置的TFT基板与第一基板以及设于所述TFT基板与所述第一基板之间的液晶层，所述TFT基板为如权利要求1所述的TFT基板。
  15. 根据权利要求14所述的液晶显示面板，其中，所述第一基板为玻璃基板。
  16. 一种显示模组，其中，包括如权利要求14所述的液晶显示面板。
  17. 根据权利要求16所述的显示模组，其中，还包括触控屏，所述触控屏与所述液晶显示面板层叠设置。
  18. 根据权利要求17所述的显示模组，其中，所述触控屏设置在所述液晶显示面板的出光面一侧。
  19. 根据权利要求16所述的显示模组，其中，所述显示模组还包括背光模组，所述背光模组设置在所述液晶显示面板的入光面一侧。
  20. 一种电子设备，其中，包括如权利要求16所述的显示模组。
PCT/CN2021/121364 2021-09-23 2021-09-28 Tft基板、液晶显示面板、显示模组及电子设备 WO2023044942A1 (zh)

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