CN204406006U - 显示设备 - Google Patents

显示设备 Download PDF

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Publication number
CN204406006U
CN204406006U CN201520002375.1U CN201520002375U CN204406006U CN 204406006 U CN204406006 U CN 204406006U CN 201520002375 U CN201520002375 U CN 201520002375U CN 204406006 U CN204406006 U CN 204406006U
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distance
conductive layer
semiconductor layer
substrate
display device
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CN201520002375.1U
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张荣芳
吴智濠
王兆祥
陈奕静
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Innolux Corp
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Innolux Display Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

一种显示设备，包含：基板，包括显示区及非显示区；第一导电层；半导体层，具有第一部分及第二部分，第一部分与基板间夹设有第一导电层，第二部分与基板间不夹设第一导电层；以及第二导电层，包括复数对应位于显示区中的数据线，第一导电层、半导体层与第二导电层共同构成复数薄膜晶体管结构，每一数据线具有间隔相对的第一侧边与第二侧边，且部分第一侧边与至少一薄膜晶体管结构中的载子通道相邻，其中，每一数据线的第二侧边与其相邻近的该半导体层的第一部分及第二部分侧边分别具有第一、第二距离，且第一距离大于第二距离。

Description

显示设备
技术领域
本实用新型是关于一种显示设备，尤其指一种能够降低阻抗、并防止第一导电层和第二导电层间电性干扰的显示设备。
背景技术
随着显示器技术不断进步，所有的装置均朝体积小、厚度薄、重量轻等趋势发展，故目前市面上主流的显示器装置已由以往的阴极射线管发展成液晶显示设备。特别是，液晶显示设备可应用的领域相当多，举凡日常生活中使用的手机、笔记本电脑、摄影机、照相机、音乐播放器、行动导航装置、电视等显示设备，其显示面板多使用液晶显示面板。近年来，随着操作人性化、简洁化的发展趋势，带有触控面板的显示设备被越来越广泛地应用于生活中。
薄膜晶体管液晶显示器(Thin film transistor liquid crystal display，TFT-LCD)是使用薄膜晶体管技术改善影像质量。简言之，TFT-LCD属于主动式矩阵LCD，TFT-LCD面板为两片玻璃基板中间夹设液晶层，上层为彩色滤光片基板、而下层为晶体管基板。当电流通过晶体管产生电场变化，造成液晶分子偏转，以改变光线的偏极性，再利用偏光片调整像素的明暗状态，再通过像素发出光线，构成影像画面。常见的TFT-LCD类型包含：扭转向列型(TN)、超级扭转向列型(STN)、垂直配向型(VA)、平面内切换型(IPS)、边缘电场切换型图样(FFS)等。
现今液晶显示设备发展技术已渐趋成熟，而各家厂商仍致力于发展具有更高显示质量的显示设备，以满足消费者对显示质量的要求，因此，目前仍需发展一种提升显示质量的显示设备，期盼带给消费者更稳定的显示效果。
实用新型内容
本实用新型的目的是提供一种显示设备，以能降低阻抗、并防止第一导电层和第二导电层间电性干扰。
为实现上述目的，本实用新型提供的显示设备，包含：一基板，包括一显示区及一非显示区，该非显示区位于该显示区外侧；一第一导电层，位于该基板上；一半导体层，位于该基板上并具有一第一部分及一第二部分，该第一部分与该基板间夹设有该第一导电层，该第二部分与该基板间不夹设该第一导电层；以及一第二导电层，迭置于该半导体层顶面且包括复数对应位于显示区中的数据线，该第一导电层、该半导体层与该第二导电层共同构成复数薄膜晶体管结构，其中每一数据线具有一第一侧边与一第二侧边，该第一侧边与该第二侧边间隔相对，且部分该第一侧边系与该至少一薄膜晶体管(TFT)结构中的载子通道(channel)相邻，其中，每一数据线的该第二侧边与其相邻近的该半导体层的第一部分侧边具有一第一距离，与其相邻近的该半导体层的第二部分侧边具有一第二距离，且该第一距离大于该第二距离。
本实用新型提供的显示设备，还包含：一基板，包括一显示区及一非显示区，该非显示区位于该显示区外侧；一第一导电层，位于该基板上；一半导体层，位于该基板上并部份覆盖该第一导电层；以及一第二导电层，形成于该半导体层的顶面，其中，对应位于该非显示区中的该第二导电层的一侧边至该半导体层的相邻一侧边间隔一第五距离，对应位于该显示区中的该第二导电层的一侧边至该半导体层的相邻一侧边间隔一第六距离，且该第五距离大于该第六距离。
据此，在本实用新型的显示设备中，由于显示区中，与基板间夹设有第一导电层的半导体层第一部分至相邻数据线的第二侧边的第一距离大于与基板间未夹设有第一导电层的半导体层第二部分至相邻数据线的第二侧边的第二距离，可确实避免第一导电层和第二导电层间的电性干扰，及避免无导电层存在的区域穿透率受到影响。并且，因对应位于非显示区中的第二导电层的一侧边至半导体层一相邻侧边的第五距离大于对应位于显示区中的第二导电层的一侧边至半导体层一相邻侧边的第六距离，可有效降低阻抗，并可避免寄生电容增加而影响液晶效率。
附图说明
图1是本实用新型一较佳实施例的显示设备示意图。
图2A是本实用新型一较佳实施例的显示区像素结构示意图。
图2B是图2A中a剖面线的剖视图。
图2C是图2A中b剖面线的剖视图。
图2D是图2A中c剖面线的剖视图。
图3是本实用新型另一较佳实施例的显示区像素结构示意图。
图4是本实用新型再一较佳实施例的显示区像素结构示意图。
图5A是本实用新型一较佳实施例的非显示区像素结构示意图。
图5B是图5A中d剖面线的剖视图。
图5C是图5A中e剖面线的剖视图。
图6是本实用新型又一较佳实施例的像素结构剖视图。
图7是本实用新型再一较佳实施例的像素结构剖视图。
附图中符号说明
1第一导电层             33第一接触边界
2半导体层               37  ,  37’接触边界
21第一部分              35第二接触边界
22第二部分              4薄膜晶体管结构
23轮廓侧边              5基板
3第二导电层             51非显示区
31数据线                52显示区
311第一侧边             6绝缘层
312第二侧边             7载子通道
32电极部                100显示设备
34,36,36’              侧边
具体实施方式
以下是由特定的具体实施例说明本实用新型的实施方式，本领域技术人员可由本说明书所揭示的内容轻易地了解本实用新型的其他优点与功效。本实用新型亦可由其他不同的具体实施例加以施行或应用，本说明书中的各项细节亦可针对不同观点与应用，在不悖离本实用新型的精神下进行各种修饰与变更。
实施例1
请参照图1，本实用新型提供一种显示设备100，包含一非显示区51及一显示区52，非显示区51位于显示区52外侧，其中显示区52的像素结构如图2所示，包括：一基板，包括对应的显示区52及非显示区51；一第一导电层1，位于该基板上；一绝缘层，位于该第一导电层1上且覆盖该第一导电层1；一半导体层2，位于该绝缘层上并具有一第一部分21及一第二部分22，该第一部分21与该基板间夹设有该第一导电层1，该第二部分22与该基板间不夹设该第一导电层1；以及一第二导电层3，迭置于该半导体层2顶面且包括复数对应位于显示区52中的数据线31和电极部32，每一数据线31具有一第一侧边311与一第二侧边312，该第一侧边311与该第二侧边312是间隔相对，该第一导电层1、该半导体层2与该第二导电层3共同构成复数薄膜晶体管(TFT)结构4，且部分该第一侧边311与至少一薄膜晶体管(TFT)结构4中的载子通道7相邻，该第二侧边312与该薄膜晶体管(TFT)结构4中的载子通道7不相邻，且该第二侧边312与该半导体层2的侧边轮廓23形状相同。
请参照区域放大图，该些数据线31的该第二侧边312至该第一部分21的一相邻侧边间隔一第一距离，至该第二部分22的一相邻侧边间隔一第二距离，且第一距离大于第二距离。其中，a剖面线的剖视图如图2B所示，像素结构依序为：基板5、第一导电层1、绝缘层6、半导体层(在此剖面图中为第一部分21)、及第二导电层3。第二导电层3包含的该些数据线31的第二侧边312具有与半导体层2接触的一第一接触边界33，第一接触边界33至半导体层第一部分21的一相邻侧边间隔一第一距离D1，另外，b剖面线的剖视图如图2C所示，像素结构依序为：基板5、绝缘层6、半导体层(在此剖面图中为第二部分22)、及第二导电层3。第一接触边界33至半导体层第二部22的一相邻侧边间隔一第二距离D2，且第一距离D1大于第二距离D2。
再者，请参照图2D，是图2A中c剖面线的剖视图，是对薄膜晶体管结构4作更详细的说明。像素结构依序为：基板5、第一导电层1(包含栅极(Gate))、绝缘层6、半导体层2(包含载子通道7)、及第二导电层3(包含分别由数据线31与电极部32构成的源极(Source)、漏极(Drain))；其中第一侧边311即该数据线31靠近载子通道7的一侧，该第二侧边312即是与该第一侧边311间隔相对的另一侧。
于此实施例中，第一距离D1为0.7um至1.5um，较佳为0.8um至1.1um；第二距离D2为0.3um至1.0um，较佳为0.5um至0.7um。该第一距离D1与该第二距离D2的比值较佳为1.3至1.7，而本实用新型并未受限于此；该第一距离D1、该第二距离D2主要是考虑该第二导电层3的宽度而加以变化。若该第一距离D1、该第二距离D2大于上述范围，则相邻半导体层2(即，相邻像素中的相邻半导体层2)在工艺上的可行性不高。并且，当该第一距离D1与该第二距离D2的比值介于上述范围内，可达到本实用新型装置的电性干扰屏蔽的效果与数据线阻值的限制。
然而，本实用新型的显示区52像素结构并不受限于此，可为本领域中常见的结构，例如图3、图4所示的像素结构。在图3、图4中，结构特征皆与上述图2A相同；该些数据线31的该第二侧边312至该第一部分21的一侧边间隔一第一距离D1，至该第二部分22的一侧边间隔一第二距离D2，且第一距离D1大于第二距离D2。
此外，非显示区51的像素结构如图5A所示，第二导电层3还可包括复数字于非显示区51的走线33，该些走线33的一侧边34至半导体层2第一部分21的一相邻侧边间隔一第三距离D3，至半导体层2第二部分22的一相邻侧边间隔一第四距离D4，且第三距离D3大于第四距离D4。其中，d剖面线的剖视图如图5B所示，像素结构依序为：基板5、第一导电层1、绝缘层6、半导体层2、及第二导电层3。第二导电层3包含的该些走线的侧边34具有与半导体层2接触的一第二接触边界35，第二接触边界35至半导体层第一部分21的一相邻侧边间隔一第三距离D3，另外，e剖面线的剖视图如图5C所示，像素结构依序为：基板5、绝缘层6、半导体层2、及第二导电层3。第二接触边界35至半导体层第二部分22的一相邻侧边间隔一第四距离D4，且第三距离D3大于第四距离D4。于此实施例中，第三距离可为1um至2um，较佳为1.4um至1.7um。
也就是说，本实用新型由控制蚀刻工艺，使第一距离D1大于第二距离D2、或第三距离D3大于第四距离D4，这是因为当半导体层2和基板5间夹设有第一导电层1时，该第一导电层1与该第二导电层3会产生寄生电容，进而干扰该第二导电层3原有的电讯号传递，因此，缩减位于半导体层2上方的第二导电层3，以减少寄生电容；而当半导体层2和基板5间无夹设第一导电层1时，可改善背光源通过时光线散射的影响，因此尽量缩短第二距离D2的宽度，避免在交界处产生的散射影响对比度。
更进一步来说，本实施例中以显示区52和非显示区51相比，非显示区51中第二接触边界35至半导体层第一部分21的该第三距离D3大于显示区52中的该些数据线31的第二侧边312至半导体层第二部分22的该第二距离D2；或者，该第三距离D3大于显示区52中的该些数据线31的第二侧边312至该第一部分21的该第一距离D1；但本实用新型并未受限于此。
非显示区51中该第二导电层3的该些走线33为降低阻值，因此令该些走线33与其底层的半导体层2有较大的距离(即，第三距离D3较大)，以提高导线有效宽度、降低阻值；因此，于本实施例中除在显示区52中令第一距离D1大于第二距离D2外，亦令非显示区51中的第三距离大于显示区52中的第一距离D1，使得整体显示设备的电性能有所改善。
实施例2
本实用新型另提供一种显示设备(与图1相同，包含非显示区51及显示区52，该非显示区51位于该显示区52外侧)，其中像素结构的部分剖视图如图6所示，包含：一基板5，包括对应的显示区52及非显示区51；一第一导电层1，位于该基板5上；一绝缘层6，位于该第一导电层1上且覆盖该第一导电层1；一半导体层2，位于该基板5上并部份覆盖该第一导电层1；以及一第二导电层3，形成于该半导体层2的顶面，其中，该第二导电层的侧边36,36’分别具有与该半导体层接触的接触边界37,37’，在该非显示区51中的该接触边界37至该半导体层2的一相邻侧边间隔一第五距离D5，在该显示区52中的该接触边界37’至该半导体层2的一相邻侧边间隔一第六距离D6，且第五距离D5大于第六距离D6。
在此实施例中，第二导电层3可包括复数对应位于该显示区52的数据线，每一数据线具有一第一侧边与一第二侧边，该第一侧边与该第二侧边系间隔相对，且位于该显示区52中部分该第一侧边与一薄膜晶体管(TFT)结构中的载子通道相邻，该第二侧边与该薄膜晶体管(TFT)结构中的载子通道不相邻，该第二侧边与该半导体层2的一轮廓侧边形状相同；以及该第六距离D6可为该第二侧边的该接触边界37’至该半导体层2的该相邻侧边的距离。
于此实施例中，第五距离D5可为0.7um至2.0um；第六距离D6可为0.3um至1.5um。该第五距离D5与该第六距离D6的比值较佳为1.2至1.6，而本实用新型并未受限于此。
其中，像素结构的另一部分剖视图如图7所示，该半导体层可具有一第一部分21及一第二部分22，该第一部分21与该基板5间夹设有该第一导电层1，该第二部分22与该基板5间不夹设该第一导电层1，且该接触边界37至该第一部分21的一相邻侧边间隔一第七距离D7，该接触边界37’至该第二部分22的一相邻侧边间隔一第八距离D8，且第七距离D7大于第八距离D8。于此实施例中，第七距离D7可为1um至2um。
据此，为了降低阻抗，非显示区中第二导电层与半导体层的相邻侧边的距离需大于显示区中第二导电层与半导体层的相邻侧边的距离。并且，在显示区中，若半导体层与其上层的数据线的距离(即，第六距离D6)增加，会令半导体层与其下层的第一导电层的电容增加，进而导致液晶效率变差，为了避免寄生电容增加而影响液晶效率，较佳的，在非显示区中的第七距离D7同时大于显示区中的第六距离D6与第八距离D8。
本实用新型的显示设备，皆可由本技术领域常见的方法制备完成，于此不再赘述。第一导电层1、第二导电层2的材料可使用本技术领域常用的导电材料，如金属、合金、金属氧化物、金属氮氧化物、或其他本技术领域常用的电极材料；且较佳为金属材料。基板可使用本技术领域常用的基板，如玻璃基板、塑料基板、硅基板及陶瓷基板等。绝缘层的材料，则可采用本技术领域常用的栅极绝缘层材料，如氮化硅(SiN)；而半导体层，亦可采用本技术领域常用的半导体层材料，包括：非晶硅、多晶硅、如P13、DH4T、五苯环的有机材料等；然而，本实用新型并不仅限于此。
在上述实施例中，本领域技术人员均了解：省略绘示显示设备中的其他组件，例如：上述实施例的像素结构更可与彩色滤光片基板、液晶层、背光模块等组合形成液晶显示设备。本实用新型的显示设备可为各种平面显示器，例如可为液晶显示器(LCD)、或有机发光二极管显示器(OLED)；实际应用例如：车用显示器、隔离电磁波玻璃、手机、太阳能电池、携带式液晶电玩、家电用品液晶面板、仪器用显示器、有机发光二极管显示器、液晶显示器、笔记本电脑、液晶电视、等离子体显示器、彩色滤镜用电极或以上的组合等。
上述实施例仅为了方便说明而举例而已，本实用新型所主张的权利范围自应以申请的权利要求范围所述为准，而非仅限于上述实施例。

Claims (17)

1.一种显示设备，其特征是，包含：
一基板，包括一显示区及一非显示区，该非显示区位于该显示区外侧；
一第一导电层，位于该基板上；
一半导体层，位于该基板上并具有一第一部分及一第二部分，该第一部分与该基板间夹设有该第一导电层，该第二部分与该基板间不夹设该第一导电层；以及
一第二导电层，迭置于该半导体层的一顶面且与该第一导电层、该半导体层配合构成复数对应位于显示区的薄膜晶体管结构，该第二导电层包括复数数据线，该些数据线对应位于显示区且间隔排列，每一数据线具有一第一侧边与一第二侧边，该第一侧边与该第二侧边间隔相对，且部分该第一侧边与相对应的该些薄膜晶体管结构中的载子通道相邻；
其中，每一数据线的该第二侧边与其底层的该半导体层的第一部分侧边具有一第一距离，与其底层的该半导体层的第二部分侧边具有一第二距离，且该第一距离大于该第二距离。
2.如权利要求1所述的显示设备，其特征是，该第二导电层包括复数对应位于该非显示区的走线，位于该半导体层的第一部分上的该些走线侧边至该半导体层的相邻一侧边间隔一第三距离，位于该半导体层的第二部分上的该些走线至该半导体层的相邻一侧边间隔一第四距离，且该第三距离大于该第四距离。
3.如权利要求2所述的显示设备，其特征是，该第三距离大于该第二距离。
4.如权利要求2所述的显示设备，其特征是，该第三距离大于该第一距离。
5.如权利要求1所述的显示设备，其特征是，该第一距离为0.7um至1.5um。
6.如权利要求1所述的显示设备，其特征是，该第二距离为0.3um至1um。
7.如权利要求2至4中任一项所述的显示设备，其特征是，该第三距离为1um至2um。
8.如权利要求1所述的显示设备，其特征是，该第一距离与该第二距离的比值为1.3至1.7。
9.如权利要求1所述的显示设备，其特征是，该些数据线的该第二侧边与其底层的该半导体层侧边轮廓形状相同。
10.一种显示设备，其特征是，包含：
一基板，包括一显示区及一非显示区，该非显示区位于该显示区外侧；
一第一导电层，位于该基板上；
一半导体层，位于该基板上并部份覆盖该第一导电层；以及
一第二导电层，形成于该半导体层的一顶面；
其中，对应位于该非显示区中的该第二导电层的一侧边至其底层的该半导体层的相邻一侧边间隔一第五距离，对应位于该显示区中的该第二导电层的一侧边至其底层的该半导体层的相邻一侧边间隔一第六距离，且该第五距离大于该第六距离。
11.如权利要求10所述的显示设备，其特征是，该半导体层具有一第一部分及一第二部分，该第一部分与该基板间夹设有该第一导电层，该第二部分与该基板间不夹设该第一导电层，位于该半导体层的第一部分上的该第二导电层侧边至该半导体层的一侧边间隔一第七距离，位于该半导体层的第二部分上的该第二导电层侧边至该半导体层的一侧边间隔一第八距离，且该第七距离大于该第八距离。
12.如权利要求10所述的显示设备，其特征是，对应位于该显示区中的该第二导电层形成复数数据线且与该第一导电层、该半导体层配合构成复数薄膜晶体管结构，每一数据线具有一第一侧边与一第二侧边，该第一侧边与该第二侧边间隔相对，且部分该第一侧边与相对应的该些薄膜晶体管结构中的载子通道相邻；以及
该第六距离为该第二侧边至该半导体层侧边的距离。
13.如权利要求10所述的显示设备，其特征是，该第五距离为0.7um至2.0um。
14.权利要求10所述的显示设备，其特征是，该第六距离为0.3um至1.5um。
15.如权利要求11所述的显示设备，其特征是，该第七距离为1um至2um。
16.如权利要求10所述的显示设备，其特征是，该第五距离与该第六距离的比值为1.2至1.6。
17.如权利要求12所述的显示设备，其特征是，该些数据线的该第二侧边与其底层的该半导体层侧边轮廓形状相同。
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