EP2947507A1 - Display device - Google Patents

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Publication number
EP2947507A1
EP2947507A1 EP14183032.3A EP14183032A EP2947507A1 EP 2947507 A1 EP2947507 A1 EP 2947507A1 EP 14183032 A EP14183032 A EP 14183032A EP 2947507 A1 EP2947507 A1 EP 2947507A1
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EP
European Patent Office
Prior art keywords
distance
conductive layer
semiconductor layer
display region
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14183032.3A
Other languages
German (de)
French (fr)
Inventor
Jung-Fang Chang
Chih-Hao Wu
Chao-Hsiang Wang
Yi-Ching Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Innolux Corp
Original Assignee
Innolux Corp
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Filing date
Publication date
Application filed by Innolux Corp filed Critical Innolux Corp
Publication of EP2947507A1 publication Critical patent/EP2947507A1/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • the present invention relates to a display device, and especially to a display device able to reduce the resistance and avoid the electrical interference between the first conductive layer and the second conductive layer.
  • the display devices with thin thickness, low weight, and compact size are the major products on the market.
  • the old cathode-ray tube displays are greatly replaced by the liquid crystal displays (LCD) in major areas around the world.
  • the liquid crystal displays (LCD) is widely applied in many electrical devices such as mobile phones, notebook computers, cameras, video recorders, music players, global positioning system devices, and televisions.
  • the display device with touch panel will be widely used in people's daily life.
  • the thin film transistor liquid crystal display uses the thin film transistor technology to improve the image quality.
  • the TFT-LCD is made of two glass substrate and a liquid crystal layer located there between.
  • the top glass substrate is a color filter substrate
  • the bottom substrate is a transistor substrate.
  • an electrical field generates and further rotates the liquid crystal molecules to change the polarity of the incident light.
  • the darkness or the brightness of pixels on the display can be controlled and adjusted.
  • the image of a frame can be displayed.
  • TFT-LCD many types of TFT-LCD are widely used now.
  • the common types are twisted nematic (TN) type, super twisted nematic (STN) type, vertical alignment (VA) type, in-plane switching (IPS) type, and fringe field switching (FFS) type.
  • An object of the present invention is to provide a display device able to reduce resistance, and prevent electrical disturbance between the first conductive layer and the second conductive layer.
  • the present invention provides a display device, comprising: a substrate comprising a display region and a non-display region surrounding the display region; a first conductive layer disposed on the substrate; a semiconductor layer disposed on the substrate and having a first portion and a second portion, wherein the first conductive layer is located between the first portion and the substrate, and the second portion doesn't overlap the first conductive layer; and a second conductive layer disposed on a top surface of the semiconductor layer, and combined with the first conductor layer and the semiconductor layer to form plural thin film transistors located in the display region, wherein the second conductive layer comprises plural data lines, each data line has a first side and a second side, the first side and the second side are arranged with an interval, and part of the first side is near to a channel of one of thin film transistors corresponding to the first side; wherein the second side of each data line is spaced from the neighboring side of the semiconductor layer in a first distance on the first portion of the semiconductor layer, the second side of each data
  • the present invention provides another display device, comprising: a substrate comprising a display region and a non-display region surrounding the display region; a first conductive layer disposed on the substrate; a semiconductor layer disposed on the substrate and partially covering the first conductive layer, and there is a spacing between a first side of the semiconductor layer and a second side of the second conductive layer from a top view, wherein the first side of the semiconductor layer is adjacent to the second side of the second conductive layer; wherein the spacing in the display region is a first distance, the spacing in the non-display region is a second distance, and the first distance is smaller than the second distance .
  • the first distance which is defined by the first portion of the semiconductor layer and the substrate having a first conductive layer there between to the second side of the neighboring data line is greater than the second distance which is defined by the second portion of the semiconductor layer and the substrate without a first conductive layer there between to the second side of the neighboring data line. That can avoid electrical disturbance between the first conductive layer and the second conductive layer, and avoid effective penetration percentage in the region without conductive layers.
  • the fifth distance defined by one side of the second conductive layer in the non-display region and the neighboring side of the semiconductor layer located thereunder is greater than the sixth distance defined by one side of the corresponding second conductive layer in the display region and the neighboring side of the semiconductor layer located thereunder, so that it can reduce resistance effectively and avoid increasing parasite capacitance to affect efficiency of the liquid crystal.
  • a display device 100 including a non-display region 51 and a display region 52 is provided.
  • the pixel structure in the display region 52 includes a substrate having a non-display region 51 and a display region 52 surrounding the display region 51; a first conductive layer 1 disposed on the substrate; an insulation layer locating and covering the first conductive layer 1; a semiconductor layer 2 locating on the insulation layer and having a first portion 21 and a second portion 22, wherein the first conductive layer 1 locates between the first portion 21 and the substrate, and the second portion 22 doesn't overlap the first conductive layer 1; and a second conductive layer 3 locating on the top surface of the semiconductor layer 2, and further including data lines 31 and electrodes 32 in the display region 52.
  • each data line 31 has a first side 311 and a second side 312, and the first side 311 is separated from the second side 312 through the data line 31.
  • the first conductive layer 1, the semiconductor layer 2, and the second conductive layer 3 are combined together to form plural thin film transistors 4.
  • One part of the first side 311 is near to the channel 7 of at least one thin film transistor 4.
  • the second side 312 is not near to the channel 7 of the thin film transistor 4.
  • the shape profile of the second side 312 is the same as that of side profile 23 of the semiconductor layer 2.
  • the second side 312 of the data line 31 is spaced from the neighboring side of the first portion 21 in a first distance.
  • the second side 312 of the data line 31 is spaced from the neighboring side of the second portion 22 in a second distance there between.
  • the first distance is greater than the second distance.
  • the cross-sectional view of the section line "a" is shown in Figure 2B .
  • the structure of the pixel subsequently includes a substrate 5, a first conductive layer 1, an insulation layer 6, a semiconductor layer (i.e. the first portion 21 in this cross-sectional view), and a second conductive layer 3.
  • the second side 312 of a data line 31 of the second conductive layer 3 contacts the semiconductor 2 with a first contact border 33. Then a first distance D1 is defined by the interval width between the first contact border 33 and the first portion 21 of the semiconductor layer.
  • a first distance D1 is defined by the interval width between the first contact border 33 and the first portion 21 of the semiconductor layer.
  • the cross-sectional view of the section line "b" is shown in Figure 2C .
  • the structure of the pixel subsequently includes a substrate 5, an insulation layer 6, a semiconductor (i.e. the second portion 22 in this cross-sectional view), and a second conductive layer 3.
  • a second distance D2 is defined by the interval width between the first contact border 33 and the second portion 22 of the semiconductor layer. The first distance D1 is greater than the second distance D2.
  • Figure 2D is a cross-sectional view according to the sectional line "c" in Figure 2A , and is the details of the structure of the thin film transistor 4 is shown here.
  • the pixel structure subsequently includes a substrate 5, a first conductive layer 1 (including a gate), an insulation layer 6, a semiconductor layer 2 (including a channel 7), and a second conductive layer 3 (including a source, a drain made of a data line 31, and electrode 32, respectively).
  • the first side 311 of the data line is close to one side of the channel 7, and the second side 312 locates on the other side opposite to the first side 311.
  • the first distance D 1 is in a range of 0.7 ⁇ m to 1.5 ⁇ m, preferably 0.8 ⁇ m to 1.1 ⁇ m.
  • the second distance D2 is in a range of 0.3 ⁇ m to 1.0 ⁇ m, preferably 0.5 ⁇ m to 0.7 ⁇ m.
  • the ratio of first distance D1 to the second distance D2 preferably is 1.3 to 1.7, but is not limited thereto. If the first distance D1 and the second distance D2 is greater than the range illustrated above, then the achievement of the neighboring semiconductor 2 (i.e. the semiconductor neighboring to the pixel) is not possible to be achieved in the manufacturing process. In addition, when the ratio of the first distance D 1 to the second distance D2 is in the range described above, it can shield the electromagnetic interference and reduce the resistance of the data line.
  • the pixel structure in the display region 52 is not limited thereto, and it can be any common structure known by the people skilled in the art.
  • the structure characters are the same as those of Figure 2A .
  • the second side 312 of the data line 31 is spaced from one side of the first portion 21 with an interval of first distance D1
  • the second side 312 of the data line 31 is spaced from one side of the second portion 22 with another interval of second distance D2.
  • the first distance D 1 is greater than the second distance D2.
  • the pixel structure in the non-display region is shown in Figure 5A .
  • the second conductive layer 3 includes plural circuit lines 33 in the non-display region 51.
  • One side 34 of the circuit lines 33 and the neighboring side of the first portion 21 of the semiconductor layer 2 is separated by an interval of third distance D3
  • the side 34 of circuit lines 33 and the neighboring side of the second portion 22 of the semiconductor layer 2 is separated by an interval of fourth distance D4, and the third distance is greater than the fourth distance.
  • the cross-sectional view of the section line "d" is shown in Figure 5B .
  • the structure of the pixel subsequently includes a substrate 5, a first conductive layer 1, an insulation layer 6, a semiconductor 2, and a second conductive layer 3.
  • the side 34 of a data line 3 of the second conductive layer 3 contacts the semiconductor 2 with a second contact border 35.
  • the second contact border 35 and the neighboring side of the first portion 21 of the semiconductor layer are separated by an interval of third distance D3.
  • the cross-sectional view of the section line "e" is shown in Figure 5C .
  • the structure of the pixel subsequently includes a substrate 5, an insulation layer 6, a semiconductor 2, and a second conductive layer 3.
  • the second contact border 35 and the neighboring side of the second portion 22 of the semiconductor layer are separated by an interval of fourth distance D4.
  • the third distance can be 1 ⁇ m to 2 ⁇ m, and preferably 1.4 ⁇ m to 1.7 ⁇ m.
  • the condition that the first distance D 1 is greater than the second distance D2 and the third distance D3 is greater than the fourth distance D4 can be achieved. It is known that when a first conductive layer locates between the semiconductor layer 2 and the substrate 5, a parasite capacitance generates and the parasite capacitance further interferes with the transmission of electrical signals through the second conductive layer 3. However, the parasite capacitance can be reduced by shrinking the second conductive layer 3 on the semiconductor layer 2.
  • the semiconductor layer 2 doesn't overlap the first conductive layer 1
  • the light scattering from the passing of the light from the backlight module can be improved, and the contrast deterioration caused by the scattering from the interface can be avoided by shortening the width of the second distance D2.
  • the third distance D3 defined by the second contact border 35 in the non-display region 51 and the first portion 21 of the semiconductor layer is greater than the second distance D2 defined by the second side 312 of the data line 31 in the display region 52 and second portion 22 of the semiconductor, or the third distance D3 is greater than first distance D1 defined by the second side 312 of the data line 31 and the first portion 21.
  • the distance (i.e. the third distance) between the circuit line 33 and the semiconductor layer 2 is increased. Then the resistance can be reduced and the efficient width of the conductive lines can be increased.
  • the first distance D1 in the display region 52 is set to be greater than the second distance D2
  • the third distance in the non-display region is set to be greater than the first distance D1 in the display region 52 at the same time to improve the display quality of the display device.
  • Another display device (similar to the display device shown in Figure 1 , including a display region 51 and a non-display 52 surrounding the display region 51) is also provided in the present embodiment.
  • Part of the pixel structure cross-sectional view (shown in Figure 6 ) subsequently includes a substrate 5 including a display region 51 and a non-display 52, a first conductive layer 1 located on the substrate 5, an insulation layer 6 located on and covering the first conductive layer 1, a semiconductor layer 2 located on the substrate 5 and partially covering the first conductive layer 1, and a second conductive layer 3 formed on the top surface of the semiconductor layer 2.
  • the sides 36, 36' of the second conductive layer contact with the semiconductor layers through contact borders 37, 37'.
  • the contact border 37 in the non-display region 51 and the neighboring side of the semiconductor layer 2 are separated by an interval of a fifth distance D5
  • the contact border 37' in the display region 52 and the neighboring side of the semiconductor layer 2 are separated by an interval of a sixth distance D6, and the fifth distance D5 is greater than the sixth distance D6.
  • the second conductive layer 3 may include plural data lines in the display region 52.
  • Each data line has a first side and a second side, and the first side is separated from the second side through the data line.
  • part of the first side in the display region 52 is near to the channel of a thin film transistor, and the second side is not near to the channel of the thin film transistor.
  • the shape of the second side is the same as that of the side profile of the semiconductor layer.
  • the sixth distance D6 is the distance between the contact border 37' of the second side and the neighboring side of the semiconductor layer.
  • the fifth distance D5 may be in a range of 0.7 ⁇ m to 2.0 ⁇ m
  • the sixth distance D6 may be in a range of 0.3 ⁇ m to 1.5 ⁇ m.
  • the ratio of the fifth distance D5 to the sixth distance D6 is preferred to be 1.2 to 1.6, but the present invention is not limited thereto.
  • a semiconductor layer may have a first portion 21 and a second portion 22, wherein the first conductive layer 1 locates between the first portion 21 and the substrate 5, and first conductive layer 1 doesn't locate between the second portion 22 and the substrate 5; the contact border 37' and the neighboring side of the first portion 21 are separated by an interval of a seventh distance D7, the contact border 37' and the neighboring side of the second portion 22 are separated by an interval of a eighth distance D8, and the seventh distance D7 is greater than the eighth distance D8.
  • the seventh distance D7 may be in a range of 1 ⁇ m to 2 ⁇ m.
  • the distance between the second conductive layer and the neighboring side of the semiconductor layer in non-display region should be greater than that between the second conductive layer and the neighboring side of the semiconductor layer in display region.
  • the distance (i.e. sixth distance D6) in display region between the semiconductor layer and the data line thereon increases, parasite capacitance between the semiconductor layer and the first conductive layer thereunder may also increase, so that efficiency of the liquid crystal is getting worse.
  • the seventh distance D7 in non-display region is set to greater than the sixth distance D6 and the eighth distance D8 in display region preferably.
  • the display device of the present invention may be completely fabricated by the people skilled in the art, so we will not go further on this here.
  • the first conductive layer 1, the second conductive layer 2 may use the common conducting material in the art such as metal, alloy, metallic oxide, metallic nitrogen-oxide, or other common electrode material in the art; and preferably is metal.
  • the substrate may use the common substrate material such as glass substrate, plastic substrate, silicon substrate, ceramic substrate.
  • the insulation layer may use the common gate insulating material such as silicon nitride (SiN); and the semiconductor layer may use the common semiconducting material, including amorphous silicon, poly silicon, or organic material such as P13, DH4T, and pentacene.
  • the pixel structure of the aforementioned embodiment can combine with a colorful optical filter substrate, liquid crystal layer, backlight module to form a liquid crystal display device.
  • the display device of the present invention can be a variety of flat panel display, for example, it can be a liquid crystal display (LCD), or an organic light emitting diode display (OLED); practical application such as car displays, electromagnetic isolation glass, cell phones, solar cells, portable LCD video games, home appliances LCD panel, instrument displays, organic light-emitting diode displays, LCD monitors, notebook computers, LCD TVs, plasma monitors, color filters electrodes or the combination thereof.

Abstract

The present invention relates to a display device, comprising: a substrate comprising a display region and a non-display region surrounding the display region; a first conductive layer disposed on the substrate; a semiconductor layer disposed on the substrate and partially covering the first conductive layer; and a second conductive layer disposed on a top surface of the semiconductor layer; and there is a spacing between a first side of the semiconductor layer and a second side of the second conductive layer from a top view, wherein the first side of the semiconductor layer is adjacent to the second side of the second conductive layer; wherein the spacing in the display region is a first distance, the spacing in the non-display region is a second distance, and the first distance is smaller than the second distance.
Figure imgaf001

Description

    CROSS REFERENCE TO RELATED APPLICATION
  • This application claims the benefits of the Taiwan Patent Application Serial Number 103117752, filed on May 21, 2014 , the subject matter of which is incorporated herein by reference.
    • BACKGROUND OF THE INVENTION 1. Field of the Invention
  • The present invention relates to a display device, and especially to a display device able to reduce the resistance and avoid the electrical interference between the first conductive layer and the second conductive layer.
    • 2. Description of Related Art
  • Since the technology of display devices developed quickly, the display devices with thin thickness, low weight, and compact size are the major products on the market. In fact, the old cathode-ray tube displays are greatly replaced by the liquid crystal displays (LCD) in major areas around the world. Nowadays, the liquid crystal displays (LCD) is widely applied in many electrical devices such as mobile phones, notebook computers, cameras, video recorders, music players, global positioning system devices, and televisions. Moreover, since the demand of the devices with human-friendly operation, and simplification is strong, the display device with touch panel will be widely used in people's daily life.
  • The thin film transistor liquid crystal display (TFT-LCD) uses the thin film transistor technology to improve the image quality. In short, the TFT-LCD is made of two glass substrate and a liquid crystal layer located there between. The top glass substrate is a color filter substrate, and the bottom substrate is a transistor substrate. When a current is applied to the transistor, an electrical field generates and further rotates the liquid crystal molecules to change the polarity of the incident light. Through the assistance of foreign polarizers, the darkness or the brightness of pixels on the display can be controlled and adjusted. Hence, by controlling the brightness of plural pixels, the image of a frame can be displayed. Generally, many types of TFT-LCD are widely used now. The common types are twisted nematic (TN) type, super twisted nematic (STN) type, vertical alignment (VA) type, in-plane switching (IPS) type, and fringe field switching (FFS) type.
  • Even though the technologies of display device become much more matured now, the consumers' demand for high image quality is still strong. Hence, a display device with improved display quality is still needed to be made to meet the demand for the market.
    • SUMMARY OF THE INVENTION
  • An object of the present invention is to provide a display device able to reduce resistance, and prevent electrical disturbance between the first conductive layer and the second conductive layer.
  • To achieve the above object, the present invention provides a display device, comprising: a substrate comprising a display region and a non-display region surrounding the display region; a first conductive layer disposed on the substrate; a semiconductor layer disposed on the substrate and having a first portion and a second portion, wherein the first conductive layer is located between the first portion and the substrate, and the second portion doesn't overlap the first conductive layer; and a second conductive layer disposed on a top surface of the semiconductor layer, and combined with the first conductor layer and the semiconductor layer to form plural thin film transistors located in the display region, wherein the second conductive layer comprises plural data lines, each data line has a first side and a second side, the first side and the second side are arranged with an interval, and part of the first side is near to a channel of one of thin film transistors corresponding to the first side; wherein the second side of each data line is spaced from the neighboring side of the semiconductor layer in a first distance on the first portion of the semiconductor layer, the second side of each data line is spaced from the neighboring side of the semiconductor layer in a second distance on the second portion of the semiconductor layer, and the first distance is greater than the second distance.
  • The present invention provides another display device, comprising: a substrate comprising a display region and a non-display region surrounding the display region; a first conductive layer disposed on the substrate; a semiconductor layer disposed on the substrate and partially covering the first conductive layer, and there is a spacing between a first side of the semiconductor layer and a second side of the second conductive layer from a top view, wherein the first side of the semiconductor layer is adjacent to the second side of the second conductive layer; wherein the spacing in the display region is a first distance, the spacing in the non-display region is a second distance, and the first distance is smaller than the second distance .
  • As a result, in the display device of the present invention, because the first distance which is defined by the first portion of the semiconductor layer and the substrate having a first conductive layer there between to the second side of the neighboring data line is greater than the second distance which is defined by the second portion of the semiconductor layer and the substrate without a first conductive layer there between to the second side of the neighboring data line. That can avoid electrical disturbance between the first conductive layer and the second conductive layer, and avoid effective penetration percentage in the region without conductive layers. Besides, the fifth distance defined by one side of the second conductive layer in the non-display region and the neighboring side of the semiconductor layer located thereunder is greater than the sixth distance defined by one side of the corresponding second conductive layer in the display region and the neighboring side of the semiconductor layer located thereunder, so that it can reduce resistance effectively and avoid increasing parasite capacitance to affect efficiency of the liquid crystal.
    • BRIEF DESCRIPTION OF THE DRAWINGS
    • Figure 1 shows the schematic diagram of the display device according to a preferable embodiment of the present invention.
    • Figure 2A shows the schematic diagram of the pixel structure in display region according to a preferable embodiment of the present invention.
    • Figure 2B shows the cross-sectional view of the section line "a" in figures 2A.
    • Figure 2C shows the cross-sectional view of the section line "b" in figures 2A.
    • Figure 2D shows the cross-sectional view of the section line "c" in figures 2A.
    • Figure 3 shows the schematic diagram of the pixel structure in display region according to another preferable embodiment of the present invention.
    • Figure 4 shows the schematic diagram of the pixel structure in display region according to further another preferable embodiment of the present invention.
    • Figure 5A shows the schematic diagram of the pixel structure in non-display region according to a preferable embodiment of the present invention.
    • Figure 5B shows the cross-sectional view of the section line "d" in figures 5A.
    • Figure 5C shows the cross-sectional view of the section line "e" in figures 5C.
    • Figure 6 shows the cross-sectional view of the pixel structure according to another preferable embodiment of the present invention.
    • Figure 7 shows the cross-sectional view of the pixel structure according to further another preferable embodiment of the present invention.
    DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • Hereinafter, exemplary embodiments of the present invention will be described in detail. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms. The following embodiments are described in order to enable those of ordinary skill in the art to embody and practice the present invention, and those skilled in the art will appreciate that various modifications, additions and substitutions are possible.
    • [Embodiment 1]
  • Please refer to Figure 1. A display device 100 including a non-display region 51 and a display region 52 is provided. As shown in Figure 2, the pixel structure in the display region 52 includes a substrate having a non-display region 51 and a display region 52 surrounding the display region 51; a first conductive layer 1 disposed on the substrate; an insulation layer locating and covering the first conductive layer 1; a semiconductor layer 2 locating on the insulation layer and having a first portion 21 and a second portion 22, wherein the first conductive layer 1 locates between the first portion 21 and the substrate, and the second portion 22 doesn't overlap the first conductive layer 1; and a second conductive layer 3 locating on the top surface of the semiconductor layer 2, and further including data lines 31 and electrodes 32 in the display region 52. Moreover, each data line 31 has a first side 311 and a second side 312, and the first side 311 is separated from the second side 312 through the data line 31. The first conductive layer 1, the semiconductor layer 2, and the second conductive layer 3 are combined together to form plural thin film transistors 4. One part of the first side 311 is near to the channel 7 of at least one thin film transistor 4. The second side 312 is not near to the channel 7 of the thin film transistor 4. The shape profile of the second side 312 is the same as that of side profile 23 of the semiconductor layer 2.
  • Please refer to the enlarged view diagram of the region in Figure 2A. The second side 312 of the data line 31 is spaced from the neighboring side of the first portion 21 in a first distance. The second side 312 of the data line 31 is spaced from the neighboring side of the second portion 22 in a second distance there between. Moreover, the first distance is greater than the second distance. The cross-sectional view of the section line "a" is shown in Figure 2B. The structure of the pixel subsequently includes a substrate 5, a first conductive layer 1, an insulation layer 6, a semiconductor layer (i.e. the first portion 21 in this cross-sectional view), and a second conductive layer 3. The second side 312 of a data line 31 of the second conductive layer 3 contacts the semiconductor 2 with a first contact border 33. Then a first distance D1 is defined by the interval width between the first contact border 33 and the first portion 21 of the semiconductor layer. In addition, the cross-sectional view of the section line "b" is shown in Figure 2C. The structure of the pixel subsequently includes a substrate 5, an insulation layer 6, a semiconductor (i.e. the second portion 22 in this cross-sectional view), and a second conductive layer 3. Likewise, a second distance D2 is defined by the interval width between the first contact border 33 and the second portion 22 of the semiconductor layer. The first distance D1 is greater than the second distance D2.
  • Referring to Figure 2D, Figure 2D is a cross-sectional view according to the sectional line "c" in Figure 2A, and is the details of the structure of the thin film transistor 4 is shown here. The pixel structure subsequently includes a substrate 5, a first conductive layer 1 (including a gate), an insulation layer 6, a semiconductor layer 2 (including a channel 7), and a second conductive layer 3 (including a source, a drain made of a data line 31, and electrode 32, respectively). The first side 311 of the data line is close to one side of the channel 7, and the second side 312 locates on the other side opposite to the first side 311.
  • In the present embodiment, the first distance D 1 is in a range of 0.7 µm to 1.5µm, preferably 0.8 µm to 1.1µm. The second distance D2 is in a range of 0.3 µm to 1.0 µm, preferably 0.5 µm to 0.7µm. The ratio of first distance D1 to the second distance D2 preferably is 1.3 to 1.7, but is not limited thereto. If the first distance D1 and the second distance D2 is greater than the range illustrated above, then the achievement of the neighboring semiconductor 2 (i.e. the semiconductor neighboring to the pixel) is not possible to be achieved in the manufacturing process. In addition, when the ratio of the first distance D 1 to the second distance D2 is in the range described above, it can shield the electromagnetic interference and reduce the resistance of the data line.
  • However, the pixel structure in the display region 52 is not limited thereto, and it can be any common structure known by the people skilled in the art. In Figure 3, and Figure 4, the structure characters are the same as those of Figure 2A. The second side 312 of the data line 31 is spaced from one side of the first portion 21 with an interval of first distance D1, and the second side 312 of the data line 31 is spaced from one side of the second portion 22 with another interval of second distance D2. The first distance D 1 is greater than the second distance D2.
  • In addition, the pixel structure in the non-display region is shown in Figure 5A. The second conductive layer 3 includes plural circuit lines 33 in the non-display region 51. One side 34 of the circuit lines 33 and the neighboring side of the first portion 21 of the semiconductor layer 2 is separated by an interval of third distance D3, the side 34 of circuit lines 33 and the neighboring side of the second portion 22 of the semiconductor layer 2 is separated by an interval of fourth distance D4, and the third distance is greater than the fourth distance. The cross-sectional view of the section line "d" is shown in Figure 5B. The structure of the pixel subsequently includes a substrate 5, a first conductive layer 1, an insulation layer 6, a semiconductor 2, and a second conductive layer 3. The side 34 of a data line 3 of the second conductive layer 3 contacts the semiconductor 2 with a second contact border 35. The second contact border 35 and the neighboring side of the first portion 21 of the semiconductor layer are separated by an interval of third distance D3. Furthermore, the cross-sectional view of the section line "e" is shown in Figure 5C. The structure of the pixel subsequently includes a substrate 5, an insulation layer 6, a semiconductor 2, and a second conductive layer 3. The second contact border 35 and the neighboring side of the second portion 22 of the semiconductor layer are separated by an interval of fourth distance D4. In the present embodiment, the third distance can be 1µm to 2µm, and preferably 1.4 µm to 1.7µm.
  • In other words, by way of controlling the etching step or using a gray tone mask, the condition that the first distance D 1 is greater than the second distance D2 and the third distance D3 is greater than the fourth distance D4 can be achieved. It is known that when a first conductive layer locates between the semiconductor layer 2 and the substrate 5, a parasite capacitance generates and the parasite capacitance further interferes with the transmission of electrical signals through the second conductive layer 3. However, the parasite capacitance can be reduced by shrinking the second conductive layer 3 on the semiconductor layer 2. Moreover, when the semiconductor layer 2 doesn't overlap the first conductive layer 1, the light scattering from the passing of the light from the backlight module can be improved, and the contrast deterioration caused by the scattering from the interface can be avoided by shortening the width of the second distance D2.
  • Furthermore, the third distance D3 defined by the second contact border 35 in the non-display region 51 and the first portion 21 of the semiconductor layer is greater than the second distance D2 defined by the second side 312 of the data line 31 in the display region 52 and second portion 22 of the semiconductor, or the third distance D3 is greater than first distance D1 defined by the second side 312 of the data line 31 and the first portion 21.
  • To reduce the resistance of the circuit line 33 of the second conductive layer 3 in the non-display region 51, the distance (i.e. the third distance) between the circuit line 33 and the semiconductor layer 2 is increased. Then the resistance can be reduced and the efficient width of the conductive lines can be increased. Hence, in the present embodiment, the first distance D1 in the display region 52 is set to be greater than the second distance D2, and the third distance in the non-display region is set to be greater than the first distance D1 in the display region 52 at the same time to improve the display quality of the display device.
    • [Embodiment 2]
  • Another display device (similar to the display device shown in Figure 1, including a display region 51 and a non-display 52 surrounding the display region 51) is also provided in the present embodiment. Part of the pixel structure cross-sectional view (shown in Figure 6) subsequently includes a substrate 5 including a display region 51 and a non-display 52, a first conductive layer 1 located on the substrate 5, an insulation layer 6 located on and covering the first conductive layer 1, a semiconductor layer 2 located on the substrate 5 and partially covering the first conductive layer 1, and a second conductive layer 3 formed on the top surface of the semiconductor layer 2. The sides 36, 36' of the second conductive layer contact with the semiconductor layers through contact borders 37, 37'. The contact border 37 in the non-display region 51 and the neighboring side of the semiconductor layer 2 are separated by an interval of a fifth distance D5, the contact border 37' in the display region 52 and the neighboring side of the semiconductor layer 2 are separated by an interval of a sixth distance D6, and the fifth distance D5 is greater than the sixth distance D6.
  • In the present embodiment, the second conductive layer 3 may include plural data lines in the display region 52. Each data line has a first side and a second side, and the first side is separated from the second side through the data line. Moreover, part of the first side in the display region 52 is near to the channel of a thin film transistor, and the second side is not near to the channel of the thin film transistor. The shape of the second side is the same as that of the side profile of the semiconductor layer. The sixth distance D6 is the distance between the contact border 37' of the second side and the neighboring side of the semiconductor layer.
  • In the present embodiment, the fifth distance D5 may be in a range of 0.7 µm to 2.0µm, and the sixth distance D6 may be in a range of 0.3 µm to 1.5 µm. The ratio of the fifth distance D5 to the sixth distance D6 is preferred to be 1.2 to 1.6, but the present invention is not limited thereto.
  • Another part of cross-sectional view of the pixel structure as shown in Fig 7, a semiconductor layer may have a first portion 21 and a second portion 22, wherein the first conductive layer 1 locates between the first portion 21 and the substrate 5, and first conductive layer 1 doesn't locate between the second portion 22 and the substrate 5; the contact border 37' and the neighboring side of the first portion 21 are separated by an interval of a seventh distance D7, the contact border 37' and the neighboring side of the second portion 22 are separated by an interval of a eighth distance D8, and the seventh distance D7 is greater than the eighth distance D8. In the present embodiment, the seventh distance D7 may be in a range of 1 µm to 2µm.
  • Therefore, in order to reduce resistance, the distance between the second conductive layer and the neighboring side of the semiconductor layer in non-display region should be greater than that between the second conductive layer and the neighboring side of the semiconductor layer in display region. Besides, if the distance (i.e. sixth distance D6) in display region between the semiconductor layer and the data line thereon increases, parasite capacitance between the semiconductor layer and the first conductive layer thereunder may also increase, so that efficiency of the liquid crystal is getting worse. To avoid affecting efficiency of the liquid crystal, the seventh distance D7 in non-display region is set to greater than the sixth distance D6 and the eighth distance D8 in display region preferably.
  • The display device of the present invention may be completely fabricated by the people skilled in the art, so we will not go further on this here. The first conductive layer 1, the second conductive layer 2 may use the common conducting material in the art such as metal, alloy, metallic oxide, metallic nitrogen-oxide, or other common electrode material in the art; and preferably is metal. The substrate may use the common substrate material such as glass substrate, plastic substrate, silicon substrate, ceramic substrate. The insulation layer may use the common gate insulating material such as silicon nitride (SiN); and the semiconductor layer may use the common semiconducting material, including amorphous silicon, poly silicon, or organic material such as P13, DH4T, and pentacene.
  • In the embodiment illustrated above, it will be understood by those skilled in the art that some components in display device has been omitted, for example the pixel structure of the aforementioned embodiment can combine with a colorful optical filter substrate, liquid crystal layer, backlight module to form a liquid crystal display device. The display device of the present invention can be a variety of flat panel display, for example, it can be a liquid crystal display (LCD), or an organic light emitting diode display (OLED); practical application such as car displays, electromagnetic isolation glass, cell phones, solar cells, portable LCD video games, home appliances LCD panel, instrument displays, organic light-emitting diode displays, LCD monitors, notebook computers, LCD TVs, plasma monitors, color filters electrodes or the combination thereof.
  • Although the present invention has been explained in relation to its preferred embodiment, it is to be understood that many other possible modifications and variations can be made without departing from the spirit and scope of the invention as hereinafter claimed.

Claims (12)

  1. A display device (100), comprising:
    a substrate comprising a display region (51) and a non-display region (52) surrounding the display region;
    a first conductive layer (1) disposed on the substrate;
    a semiconductor layer (2) disposed on the first conductive layer; and
    a second conductive layer (3) disposed on a top surface of the semiconductor layer, and there is a spacing between a first side of the semiconductor layer and a second side of the second conductive layer from a top view, wherein the first side of the semiconductor layer is adjacent to the second side of the second conductive layer;
    wherein the spacing in the display region is a first distance, the spacing in the non-display region is a second distance, and the first distance is smaller than the second distance .
  2. The display device of claim 1, wherein the semiconductor layer has a first portion and a second portion, the first conductive layer is located between the first portion and the substrate, the second portion doesn't overlap the first conductive layer.
  3. The display device of claim 2, wherein the spacing at the first portion of the semiconductor layer is a third distance, the spacing at the second portion of the semiconductor layer is a fourth distance, and the fourth distance is smaller than the third distance in the non-display region.
  4. The display device of claim 3, wherein the third distance in a range from 1 µm to 2 µm.
  5. The display device of claim 2, wherein the spacing at the first portion of the semiconductor layer is a third distance, the spacing at the second portion of the semiconductor layer is a fourth distance, and the third distance is smaller than the fourth distance in the display region.
  6. The display device of claim 5, the third distance is in a range from 0.3 µm to 1 µm, the fourth distance is in a range from 0.7 µm to 1.5 µm.
  7. The display device of any of the claims 1 to 6, wherein the second conductive layer comprises at least one data line in the display region to combine with the first conductive layer and the semiconductor layer to form at least one thin film transistor, the data line has a first side and a second side spaced out the first side, and the first side is near to the a channel of the thin film transistor; and
    wherein the spacing in the display region is a distance between the second side of the second conductive layer and the side of the semiconductor layer..
  8. The display device of any of the claims 1 to 7, wherein the second conductive layer further comprises at least one circuit line, the spacing in the non-display region is the one side of the circuit line to the one side of the semiconductor layer.
  9. The display device of any of the claims 1 to 8, wherein the second distance is in a range from 0.7 µm to 2.0 µm.
  10. The display device of any of the claims 1 to 9, wherein the first distance is in a range from 0.3 µm to 1.5 µm.
  11. The display device of any of the claims 1 to 10, wherein the shape profile of the one side of the second conductive layer is substantially the same as that of the one side of the semiconductor layer under the second conductive layer.
  12. The display device of any of the claims 1 to 11, wherein the second conductive layer and the semiconductor layer are patterned with a gray tone mask.
EP14183032.3A 2014-05-21 2014-09-01 Display device Withdrawn EP2947507A1 (en)

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TWI545381B (en) * 2014-05-21 2016-08-11 群創光電股份有限公司 Display device
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