TWI545381B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

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Publication number
TWI545381B
TWI545381B TW103117752A TW103117752A TWI545381B TW I545381 B TWI545381 B TW I545381B TW 103117752 A TW103117752 A TW 103117752A TW 103117752 A TW103117752 A TW 103117752A TW I545381 B TWI545381 B TW I545381B
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Taiwan
Prior art keywords
distance
semiconductor layer
conductive layer
display area
display device
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TW103117752A
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English (en)
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TW201544882A (zh
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張榮芳
吳智濠
王兆祥
陳奕靜
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群創光電股份有限公司
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Priority to TW103117752A priority Critical patent/TWI545381B/zh
Priority to EP14183032.3A priority patent/EP2947507A1/en
Priority to CN201520002375.1U priority patent/CN204406006U/zh
Priority to CN201510001862.0A priority patent/CN105093730B/zh
Priority to US14/669,557 priority patent/US9684214B2/en
Priority to KR1020150046983A priority patent/KR101689462B1/ko
Publication of TW201544882A publication Critical patent/TW201544882A/zh
Application granted granted Critical
Publication of TWI545381B publication Critical patent/TWI545381B/zh
Priority to US15/585,627 priority patent/US9978880B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Description

顯示裝置
本發明係關於一種顯示裝置，尤指一種能夠降低阻抗、並防止第一導電層和第二導電層間電性干擾之顯示裝置。
隨著顯示器技術不斷進步，所有的裝置均朝體積小、厚度薄、重量輕等趨勢發展，故目前市面上主流之顯示器裝置已由以往之陰極射線管發展成液晶顯示裝置。特別是，液晶顯示裝置可應用的領域相當多，舉凡日常生活中使用之手機、筆記型電腦、攝影機、照相機、音樂播放器、行動導航裝置、電視等顯示裝置，其顯示面板多使用液晶顯示面板。近年來，隨著操作人性化、簡潔化之發展趨勢，帶有觸控面板之顯示裝置被越來越廣泛地應用於生活中。
薄膜電晶體液晶顯示器(Thin film transistor liquid crystal display，TFT-LCD)係使用薄膜電晶體技術改善影像品質。簡言之，TFT-LCD屬於主動式矩陣LCD，TFT-LCD面板為兩片玻璃基板中間夾設液晶層，上層為彩色濾光片基板、而下層為電晶體基板。當電流通過電晶體產生電場變化，造成液晶分子偏轉，藉以改變光線的偏極性，再利 用偏光片調整畫素的明暗狀態，再透過畫素發出光線，構成影像畫面。常見的TFT-LCD類型包含：扭轉向列型(TN)、超級扭轉向列型(STN)、垂直配向型(VA)、平面內切換型(IPS)、邊緣電場切換型圖樣(FFS)等。
現今液晶顯示裝置發展技術已漸趨成熟，而各家廠商仍致力於發展具有更高顯示品質的顯示裝置，以滿足消費者對顯示品質的要求，藉此，目前仍需發展一種提升顯示品質之顯示裝置，期盼帶給消費者更穩定的顯示效果。
本發明之主要目的係在提供一種顯示裝置，俾能降低阻抗、並防止第一導電層和第二導電層間電性干擾。
為達成上述目的，本發明提供一種顯示裝置，包含：一基板，包括一顯示區及一非顯示區，該非顯示區位於該顯示區外側；一第一導電層，位於該基板上；一半導體層，位於該基板上並具有一第一部分及一第二部分，該第一部分與該基板間夾設有該第一導電層，該第二部分與該基板間不夾設該第一導電層；以及一第二導電層，疊置於該半導體層頂面且包括複數對應位於顯示區中的資料線，該第一導電層、該半導體層與該第二導電層共同構成複數薄膜電晶體結構，其中每一資料線具有一第一側邊與一第二側邊，該第一側邊與該第二側邊係間隔相對，且部分該第一側邊係與該至少一薄膜電晶體(TFT)結構中的載子通道(channel)相鄰，其中，每一資料線的該第二側邊與其相 鄰近的該半導體層的第一部分側邊具有一第一距離，與其相鄰近的該半導體層的第二部分側邊具有一第二距離，且該第一距離大於該第二距離。
本發明另提供一種顯示裝置，包含：一基板，包括一顯示區及一非顯示區，該非顯示區位於該顯示區外側；一第一導電層，位於該基板上；一半導體層，位於該基板上並部份覆蓋該第一導電層；以及一第二導電層，形成於該半導體層的頂面，其中，對應位於該非顯示區中的該第二導電層的一側邊至該半導體層之相鄰一側邊間隔一第五距離，對應位於該顯示區中的該第二導電層的一側邊至該半導體層之相鄰一側邊間隔一第六距離，且該第五距離大於該第六距離。
據此，在本發明之顯示裝置中，由於顯示區中，與基板間夾設有第一導電層的半導體層第一部分至相鄰資料線的第二側邊之第一距離大於與基板間未夾設有第一導電層的半導體層第二部分至相鄰資料線的第二側邊之第二距離，可確實避免第一導電層和第二導電層間的電性干擾，及避免無導電層存在的區域穿透率受到影響。並且，因對應位於非顯示區中的第二導電層的一側邊至半導體層一相鄰側邊之第五距離大於對應位於顯示區中的第二導電層的一側邊至半導體層一相鄰側邊之第六距離，可有效降低阻抗，並可避免寄生電容增加而影響液晶效率。
1‧‧‧第一導電層
2‧‧‧半導體層
21‧‧‧第一部分
22‧‧‧第二部分
23‧‧‧輪廓側邊
3‧‧‧第二導電層
31‧‧‧資料線
311‧‧‧第一側邊
312‧‧‧第二側邊
33‧‧‧第一接觸邊界
37,37’‧‧‧接觸邊界
35‧‧‧第二接觸邊界
4‧‧‧薄膜電晶體結構
5‧‧‧基板
51‧‧‧非顯示區
52‧‧‧顯示區
6‧‧‧絕緣層
7‧‧‧載子通道
32‧‧‧電極部
34,36,36’‧‧‧側邊
100‧‧‧顯示裝置
圖1係本發明一較佳實施例之顯示裝置示意圖。
圖2A係本發明一較佳實施例之顯示區畫素結構示意圖。
圖2B係圖2A中a剖面線之剖視圖。
圖2C係圖2A中b剖面線之剖視圖。
圖2D係圖2A中c剖面線之剖視圖。
圖3係本發明另一較佳實施例之顯示區畫素結構示意圖。
圖4係本發明再一較佳實施例之顯示區畫素結構示意圖。
圖5A係本發明一較佳實施例之非顯示區畫素結構示意圖。
圖5B係圖5A中d剖面線之剖視圖。
圖5C係圖5A中e剖面線之剖視圖。
圖6係本發明又一較佳實施例之畫素結構剖視圖。
圖7係本發明再一較佳實施例之畫素結構剖視圖。
以下係藉由特定的具體實施例說明本發明之實施方式，熟習此技藝之人士可由本說明書所揭示之內容輕易地了解本發明之其他優點與功效。本發明亦可藉由其他不同的具體實施例加以施行或應用，本說明書中的各項細節亦可針對不同觀點與應用，在不悖離本創作之精神下進行各種修飾與變更。
[實施例1]
請參照圖1，本發明提供一種顯示裝置100，包含一非顯示區51及一顯示區52，非顯示區51位於顯示區52外側，其中顯示區52之畫素結構如圖2所示，包括：一基板，包括對應之顯示區52及非顯示區51；一第一導電層1，位於該基板上；一絕緣層，位於該第一導電層1上且覆蓋該第一導電層1；一半導體層2，位於該絕緣層上並具有一第一部分21及一第二部分22，該第一部分21與該基板間夾設有該第一導電層1，該第二部分22與該基板間不夾設該第一導電層1；以及一第二導電層3，疊置於該半導體層2頂面且包括複數對應位於顯示區52中的資料線31和電極部32，每一資料線31具有一第一側邊311與一第二側邊312，該第一側邊311與該第二側邊312係間隔相對，該第一導電層1、該半導體層2與該第二導電層3共同構成複數薄膜電晶體(TFT)結構4，且部分該第一側邊311係與至少一薄膜電晶體(TFT)結構4中的載子通道7相鄰，該第二側邊312與該薄膜電晶體(TFT)結構4中的載子通道7不相鄰，且該第二側邊312與該半導體層2之側邊輪廓23形狀相同。
請參照區域放大圖，該等資料線31的該第二側邊312至該第一部分21的一相鄰側邊間隔一第一距離，至該第二部分22的一相鄰側邊間隔一第二距離，且第一距離大於第二距離。其中，a剖面線之剖視圖如圖2B所示，畫素結構依序為：基板5、第一導電層1、絕緣層6、半導體層(在此剖面圖中為第一部分21)、及第二導電層3。第二 導電層3包含的該等資料線31的第二側邊312具有與半導體層2接觸的一第一接觸邊界33，第一接觸邊界33至半導體層第一部分21的一相鄰側邊間隔一第一距離D1，另外，b剖面線之剖視圖如圖2C所示，畫素結構依序為：基板5、絕緣層6、半導體層(在此剖面圖中為第二部分22)、及第二導電層3。第一接觸邊界33至半導體層第二部22的一相鄰側邊間隔一第二距離D2，且第一距離D1大於第二距離D2。
再者，請參照圖2D係圖2A中c剖面線之剖視圖，係對薄膜電晶體結構4做更詳細的說明。畫素結構依序為：基板5、第一導電層1(包含閘極(Gate))、絕緣層6、半導體層2(包含載子通道7)、及第二導電層3(包含分別由資料線31與電極部32構成的源極(Source)、汲極(Drain))；其中第一側邊311即該資料線31靠近載子通道7的一側，該第二側邊312即係與該第一側邊311間隔相對的另一側。
於此實施例中，第一距離D1為0.7um至1.5um，較佳為0.8um至1.1um；第二距離D2為0.3um至1.0um，較佳為0.5um至0.7um。該第一距離D1與該第二距離D2之比值較佳為1.3至1.7，而本發明並未受限於此；該第一距離D1、該第二距離D2主要係考量該第二導電層3的寬度而加以變化。若該第一距離D1、該第二距離D2大於上述範圍，則相鄰半導體層2(即，相鄰畫素中的相鄰半導體層2)在製程上的可行性不高。並且，當該第一距離D1與該第二距離D2之比值介於上述範圍內，可達到本發明裝置之電性干擾屏蔽的效果與資料線阻值的限制。
然而，本發明之顯示區52畫素結構並不受限於此，可為習知技術領域中常見的結構，例如圖3、圖4所示的畫素結構。在圖3、圖4中，結構特徵皆與上述圖2A相同；該等資料線31的該第二側邊312至該第一部分21的一側邊間隔一第一距離D1，至該第二部分22的一側邊間隔一第二距離D2，且第一距離D1大於第二距離D2。
此外，非顯示區51之畫素結構如圖5A所示，第二導電層3還可包括複數位於非顯示區51的走線33，該等走線33的一側邊34至半導體層2第一部分21的一相鄰側邊間隔一第三距離D3，至半導體層2第二部分22的一相鄰側邊間隔一第四距離D4，且第三距離D3大於第四距離D4。其中，d剖面線之剖視圖如圖5B所示，畫素結構依序為：基板5、第一導電層1、絕緣層6、半導體層2、及第二導電層3。第二導電層3包含的該等走線的側邊34具有與半導體層2接觸的一第二接觸邊界35，第二接觸邊界35至半導體層第一部分21的一相鄰側邊間隔一第三距離D3，另外，e剖面線之剖視圖如圖5C所示，畫素結構依序為：基板5、絕緣層6、半導體層2、及第二導電層3。第二接觸邊界35至半導體層第二部分22的一相鄰側邊間隔一第四距離D4，且第三距離D3大於第四距離D4。於此實施例中，第三距離可為1um至2um，較佳為1.4um至1.7um。
也就是說，本發明藉由控制蝕刻製程，使第一距離D1大於第二距離D2、或第三距離D3大於第四距離D4，這是因為當半導體層2和基板5間夾設有第一導電層1 時，該第一導電層1與該第二導電層3會產生寄生電容，進而干擾該第二導電層3原有的電訊號傳遞，因此，縮減位於半導體層2上方之第二導電層3，以減少寄生電容；而當半導體層2和基板5間無夾設第一導電層1時，可改善背光源通過時光線散射的影響，因此盡量縮短第二距離D2的寬度，避免在交界處產生的散射影響對比度。
更進一步來說，本實施例中以顯示區52和非顯示區51相比，非顯示區51中第二接觸邊界35至半導體層第一部分21的該第三距離D3係大於顯示區52中的該等資料線31的第二側邊312至半導體層第二部分22的該第二距離D2；或者，該第三距離D3係大於顯示區52中的該等資料線31的第二側邊312至該第一部分21的該第一距離D1；但本發明並未受限於此。
非顯示區51中該第二導電層3的該等走線33為降低阻值，因此令該等走線33與其底層的半導體層2有較大的距離(即，第三距離D3較大)，以提高導線有效寬度、降低阻值；因此，於本實施例中除在顯示區52中令第一距離D1大於第二距離D2外，亦令非顯示區51中的第三距離大於顯示區52中的第一距離D1，使得整體顯示裝置的電性能有所改善。
[實施例2]
本發明另提供一種顯示裝置(與圖1相同，包含非顯示區51及顯示區52，該非顯示區51位於該顯示區52外側)，其中畫素結構之部分剖視圖如圖6所示，包含： 一基板5，包括對應之顯示區52及非顯示區51；一第一導電層1，位於該基板5上；一絕緣層6，位於該第一導電層1上且覆蓋該第一導電層1；一半導體層2，位於該基板5上並部份覆蓋該第一導電層1；以及一第二導電層3，形成於該半導體層2的頂面，其中，該第二導電層的側邊36,36’分別具有與該半導體層接觸的接觸邊界37,37’，在該非顯示區51中的該接觸邊界37至該半導體層2之一相鄰側邊間隔一第五距離D5，在該顯示區52中的該接觸邊界37’至該半導體層2之一相鄰側邊間隔一第六距離D6，且第五距離D5大於第六距離D6。
在此實施例中，第二導電層3可包括複數對應位於該顯示區52的資料線，每一資料線具有一第一側邊與一第二側邊，該第一側邊與該第二側邊係間隔相對，且位於該顯示區52中部分該第一側邊與一薄膜電晶體(TFT)結構中的載子通道相鄰，該第二側邊與該薄膜電晶體(TFT)結構中的載子通道不相鄰，該第二側邊與該半導體層2之一輪廓側邊形狀相同；以及該第六距離D6可為該第二側邊之該接觸邊界37’至該半導體層2之該相鄰側邊之距離。
於此實施例中，第五距離D5可為0.7um至2.0um；第六距離D6可為0.3um至1.5um。該第五距離D5與該第六距離D6之比值較佳為1.2至1.6，而本發明並未受限於此。
其中，畫素結構之另一部分剖視圖如圖7所示，該半導體層可具有一第一部分21及一第二部分22，該 第一部分21與該基板5間夾設有該第一導電層1，該第二部分22與該基板5間不夾設該第一導電層1，且該接觸邊界37至該第一部分21之一相鄰側邊間隔一第七距離D7，該接觸邊界37’至該第二部分22之一相鄰側邊間隔一第八距離D8，且第七距離D7大於第八距離D8。於此實施例中，第七距離D7可為1um至2um。
據此，為了降低阻抗，非顯示區中第二導電層與半導體層之相鄰側邊之距離需大於顯示區中第二導電層與半導體層之相鄰側邊之距離。並且，在顯示區中，若半導體層與其上層的資料線的距離(即，第六距離D6)增加，會令半導體層與其下層的第一導電層的電容增加，進而導致液晶效率變差，為了避免寄生電容增加而影響液晶效率，較佳的，在非顯示區中的第七距離D7係同時大於顯示區中的第六距離D6與第八距離D8。
本發明之顯示裝置，皆可由本技術領域常見之方法製備完成，於此不再贅述。第一導電層1、第二導電層2之材料可使用本技術領域常用之導電材料，如金屬、合金、金屬氧化物、金屬氮氧化物、或其他本技術領域常用之電極材料；且較佳為金屬材料。基板可使用本技術領域常用之基板，如玻璃基板、塑膠基板、矽基板及陶瓷基板等。絕緣層之材料，則可採用本技術領域常用之閘極絕緣層材料，如氮化矽(SiN)；而半導體層，亦可採用本技術領域常用之半導體層材料，包括：非晶矽、多晶矽、如P13、DH4T、五苯環之有機材料等；然而，本發明並不僅限於此。
在上述實施例中，本技術領域者均了解：省略繪示顯示裝置中的其他組件，例如：上述實施例之畫素結構更可與彩色濾光片基板、液晶層、背光模組等組合形成液晶顯示裝置。本發明之顯示裝置可為各種平面顯示器，例如可為液晶顯示器(LCD)、或有機發光二極體顯示器(OLED)；實際應用例如：車用顯示器、隔離電磁波玻璃、手機、太陽能電池、攜帶式液晶電玩、家電用品液晶面板、儀器用顯示器、有機發光二極體顯示器、液晶顯示器、筆記型電腦、液晶電視、電漿顯示器、彩色濾鏡用電極或以上之組合等。
上述實施例僅係為了方便說明而舉例而已，本發明所主張之權利範圍自應以申請專利範圍所述為準，而非僅限於上述實施例。
1‧‧‧第一導電層
2‧‧‧半導體層
21‧‧‧第一部分
22‧‧‧第二部分
23‧‧‧輪廓側邊
3‧‧‧第二導電層
31‧‧‧資料線
311‧‧‧第一側邊
312‧‧‧第二側邊
32‧‧‧電極部
4‧‧‧薄膜電晶體結構
7‧‧‧載子通道

Claims (17)

  1. 一種顯示裝置，包含：一基板，包括一顯示區及一非顯示區，該非顯示區位於該顯示區外側；一第一導電層，位於該基板上；一半導體層，位於該基板上並具有一第一部分及一第二部分，該第一部分與該基板間夾設有該第一導電層，該第二部分與該基板間不夾設該第一導電層；以及一第二導電層，疊置於該半導體層的一頂面且與該第一導電層、該半導體層配合構成複數對應位於顯示區的薄膜電晶體結構，該第二導電層包括複數資料線，該等資料線對應位於顯示區且間隔排列，每一資料線具有一第一側邊與一第二側邊，該第一側邊與該第二側邊係間隔相對，且部分該第一側邊係與相對應的該等薄膜電晶體(TFT)結構中的載子通道(channel)相鄰，其中，每一資料線的該第二側邊與其底層的該半導體層的第一部分側邊具有一第一距離，與其底層的該半導體層的第二部分側邊具有一第二距離，且該第一距離大於該第二距離。
  2. 如申請專利範圍第1項所述之顯示裝置，其中，該第二導電層還包括複數對應位於該非顯示區的走線，位於該半導體層的第一部分上的該等走線側邊至該半導體層的相鄰一側邊間隔一第三距離，位於該半導體層的第二部分上的該等 走線至該半導體層的相鄰一側邊間隔一第四距離，且該第三距離大於該第四距離。
  3. 如申請專利範圍第2項所述之顯示裝置，其中，該第三距離大於該第二距離。
  4. 如申請專利範圍第2項所述之顯示裝置，其中，該第三距離大於該第一距離。
  5. 如申請專利範圍第1項所述之顯示裝置，其中，該第一距離係為0.7um至1.5um。
  6. 如申請專利範圍第1項所述之顯示裝置，其中，該第二距離係為0.3um至1um。
  7. 如申請專利範圍第2至4項中任一項所述之顯示裝置，其中，該第三距離係為1um至2um。
  8. 如申請專利範圍第1項所述之顯示裝置，其中，該第一距離與該第二距離之比值係為1.3至1.7。
  9. 如申請專利範圍第1項所述之顯示裝置，其中，該等資料線之該第二側邊與其底層的該半導體層側邊輪廓形狀相同。
  10. 一種顯示裝置，包含：一基板，包括一顯示區及一非顯示區，該非顯示區位於該顯示區外側；一第一導電層，位於該基板上；一半導體層，位於該基板上並部份覆蓋該第一導電層；以及一第二導電層，形成於該半導體層的一頂面， 其中，對應位於該非顯示區中的該第二導電層的一側邊至其底層的該半導體層之相鄰一側邊間隔一第五距離，對應位於該顯示區中的該第二導電層的一側邊至其底層的該半導體層之相鄰一側邊間隔一第六距離，且該第五距離大於該第六距離。
  11. 如申請專利範圍第10項所述之顯示裝置，其中，該半導體層具有一第一部分及一第二部分，該第一部分與該基板間夾設有該第一導電層，該第二部分與該基板間不夾設該第一導電層，位於該半導體層的第一部分上的該第二導電層側邊至該半導體層之一側邊間隔一第七距離，位於該半導體層的第二部分上的該第二導電層側邊至該半導體層之一側邊間隔一第八距離，且該第七距離大於該第八距離。
  12. 如申請專利範圍第10項所述之顯示裝置，其中，對應位於該顯示區中的該第二導電層形成複數資料線且與該第一導電層、該半導體層配合構成複數薄膜電晶體結構，每一資料線具有一第一側邊與一第二側邊，該第一側邊與該第二側邊係間隔相對，且部分該第一側邊與相對應的該等薄膜電晶體(TFT)結構中的載子通道(channel)相鄰；以及該第六距離為該第二側邊至該半導體層側邊之距離。
  13. 如申請專利範圍第10項所述之顯示裝置，其中，該第五距離係為0.7um至2.0um。
  14. 申請專利範圍第10項所述之顯示裝置，其中，該第六距離係為0.3um至1.5um。
  15. 如申請專利範圍第11項所述之顯示裝置，其中，該第七距離係為1um至2um。
  16. 如申請專利範圍第10項所述之顯示裝置，其中，該第五距離與該第六距離之比值係為1.2至1.6。
  17. 如申請專利範圍第12項所述之顯示裝置，其中，該等資料線之該第二側邊與其底層的該半導體層側邊輪廓形狀相同。
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CN201520002375.1U CN204406006U (zh) 2014-05-21 2015-01-04 显示设备
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