WO2022269970A1 - 圧電振動子及び圧電振動子の製造方法 - Google Patents

圧電振動子及び圧電振動子の製造方法 Download PDF

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Publication number
WO2022269970A1
WO2022269970A1 PCT/JP2022/003222 JP2022003222W WO2022269970A1 WO 2022269970 A1 WO2022269970 A1 WO 2022269970A1 JP 2022003222 W JP2022003222 W JP 2022003222W WO 2022269970 A1 WO2022269970 A1 WO 2022269970A1
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Prior art keywords
electrode
insulating frame
substrate
electrodes
main surface
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PCT/JP2022/003222
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English (en)
French (fr)
Japanese (ja)
Inventor
祥司 森田
威哉 松村
崇宏 栗原
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株式会社村田製作所
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Priority to JP2023529464A priority Critical patent/JP7454141B2/ja
Publication of WO2022269970A1 publication Critical patent/WO2022269970A1/ja

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details

Definitions

  • the present invention relates to a piezoelectric vibrator and a method for manufacturing a piezoelectric vibrator.
  • a method of manufacturing a piezoelectric vibrator which includes mounting a piezoelectric vibrating element on a substrate and bonding a lid member to the substrate so as to form a sealing space for sealing the piezoelectric vibrating element.
  • Patent Document 1 in the method for manufacturing a piezoelectric vibrator described above, an electrode material containing a glass component is printed on the main surface of a substrate and fired to form an electrode, and then an insulating frame is formed on the electrode. It is disclosed that the electrodes are then plated.
  • a glass frit layer is formed on the surface of the electrode by firing the electrode.
  • a glass frit layer exists between the surface of the electrode and the back surface of the insulating frame. Further, when the glass component contained in the electrode material precipitates, the glass precipitated in the central portion of the electrode in the width direction tends to flow into both ends of the electrode in the width direction. As a result, the thickness of both ends of the glass frit layer corresponding to both ends of the electrode in the width direction is larger than the thickness of the central portion of the glass frit layer corresponding to the center portion of the electrode in the width direction.
  • the space formed between the insulating frame and the electrode also has the dimensions of the center of the space corresponding to both ends of the electrode in the widthwise direction. It is larger than the dimensions of both ends of the space corresponding to the central portion in the transverse direction.
  • the plating process takes more time than necessary. Sealability may be compromised.
  • the present invention has been made in view of such circumstances, and an object of the present invention is to provide a piezoelectric vibrator and a method for manufacturing a piezoelectric vibrator that can obtain good sealing performance and productivity. be.
  • a piezoelectric vibrator includes a piezoelectric vibrating element, a substrate having a main surface on which the piezoelectric vibrating element is mounted with a conductive holding member interposed therebetween, and a sealing space for sealing the piezoelectric vibrating element.
  • a lid member joined to the substrate so as to form a first electrode provided on the main surface and supplying a voltage to the piezoelectric vibrating element; and a second electrode provided to cover a joint portion between the insulating frame and the first electrode in a plan view of the main surface; have
  • FIG. 1 is a perspective view showing the configuration of a crystal oscillator according to this embodiment
  • FIG. FIG. 2 is a sectional view taken along the line II-II of FIG. 1
  • 3 is an enlarged view for explaining connection electrodes and sealing electrodes of the crystal oscillator according to the present embodiment
  • FIG. FIG. 4 is a sectional view taken along line IV-IV of FIG. 3
  • 4 is a cross-sectional view taken along line VV of FIG. 3
  • FIG. It is a flowchart figure for demonstrating the manufacturing method of the crystal oscillator which concerns on this embodiment.
  • FIG. 7 is a flowchart for explaining the details of step S10 of FIG. 6.
  • FIG. FIG. 8 is a diagram showing states of connection electrodes and sealing electrodes when step S14 of FIG.
  • FIG. 9 is a cross-sectional view taken along line IX-IX of FIG. 8;
  • FIG. 9 is a cross-sectional view taken along the line XX of FIG. 8; It is a figure which shows the sealing state of the crystal oscillator which concerns on a comparative example.
  • FIG. 1 is a perspective view showing the configuration of a crystal oscillator 1.
  • FIG. FIG. 2 is a sectional view taken along line II-II of FIG. In the following description, the state of the crystal oscillator 1 shown in FIG. 2 may be called "assembled state”.
  • the crystal oscillator 1 is an example of a piezoelectric oscillator.
  • the quartz oscillator 1 includes a quartz crystal resonator 10 , a lid member 20 and a substrate 30 .
  • the crystal oscillator 1 also includes an insulating layer 42 , a bonding member 43 , and a conductive holding member 45 .
  • the crystal oscillator 10 is mounted on the substrate 30 via a conductive holding member 45 provided at one end in the longitudinal direction of the crystal oscillator 10, as shown in FIG.
  • the lid member 20 is bonded to the substrate 30 via the insulating layer 42 and the bonding member 43 so as to cover the crystal vibrating element 10 .
  • the crystal oscillator 10 is sealed in the sealing space S inside the box-shaped container constituted by the lid member 20 and the substrate 30 .
  • each configuration of the crystal resonator 1, that is, the longitudinal direction, the width direction, and the thickness direction of each of the crystal resonator element 10, the lid member 20, and the substrate 30 are shown in FIG. It coincides with the X-axis direction, Z'-axis direction, and Y'-axis direction.
  • FIG. 3 is an enlarged view for explaining the connection electrodes 35a and 35b and the sealing electrodes 36a and 36b of the crystal oscillator 1.
  • FIG. 4 is a cross-sectional view taken along line IV-IV of FIG. 3.
  • FIG. 5 is a cross-sectional view taken along the line VV of FIG. 3.
  • FIG. 1 and 2 illustration of the crystal vibrating element 10 and some electrodes of the substrate 30 is omitted. Further, as shown in FIG.
  • FIG. 5 shows both together. 8 to 10 are also displayed in a similar manner.
  • the crystal vibrating element 10 is an example of a piezoelectric vibrating element and has a plate shape.
  • the crystal vibrating element 10 also includes a crystal piece 11 and a plurality of electrodes provided on the crystal piece 11 .
  • the plurality of electrodes of the crystal vibrating element 10 includes excitation electrodes 14a and 14b, connection electrodes 15a and 15b, and extraction electrodes 16a and 16b.
  • the crystal piece 11 is an example of a piezoelectric piece, and is, for example, an AT-cut crystal substrate.
  • the AT-cut crystal substrate is formed so that the plane parallel to the plane specified by the X-axis and the Z'-axis is the main surface, and the thickness is in the direction parallel to the Y'-axis.
  • the crystal vibrating element 10 adopting the AT-cut crystal piece 11 mainly vibrates in the thickness-shear vibration mode.
  • the cut angle of the crystal piece 11 is not limited, and for example, a BT cut, a GT cut, an SC cut, or the like can be applied.
  • the crystal piece 11 is a plate-like member.
  • the crystal blank 11 is rectangular parallelepiped.
  • the shape of the crystal piece 11 is not limited to a rectangular parallelepiped, and may be, for example, a mesa structure in which the central portion is thick and the periphery is thin.
  • the crystal piece 11 has main surfaces 12a and 12b on both sides in the thickness direction, and a plurality of side surfaces 12c.
  • the excitation electrodes 14a and 14b are electrodes for causing thickness-shear vibration of the crystal piece 11 by applying a voltage. As shown in FIG. 1, the excitation electrodes 14a and 14b are provided at the respective centers of the main surfaces 12a and 12b.
  • the excitation electrodes 14a and 14b are metal films made of the same material. In this embodiment, the excitation electrodes 14a and 14b are metal films made of, for example, a metal such as aluminum, silver, copper, or gold, or an electrode material containing one or more of these metals. Other electrodes of the crystal oscillator 1, which will be described later, are made of the same material as the excitation electrodes 14a and 14b.
  • connection electrodes 15 a and 15 b are terminals for electrically connecting the crystal vibrating element 10 to the substrate 30 . As shown in FIGS. 1 and 2, the connection electrodes 15a and 15b are provided at one end of the main surface 12b with a space therebetween.
  • the extraction electrodes 16a and 16b are electrodes for electrically connecting the excitation electrodes 14a and 14b to the connection electrodes 15a and 15b. As shown in FIGS. 1 and 2, the extraction electrodes 16a and 16b are provided on the main surfaces 12a and 12b and the side surface 12c so as to connect the excitation electrodes 14a and 14b to the connection electrodes 15a and 15b, respectively.
  • the substrate 30 is an example of a configuration for mounting the crystal oscillator 10, and has a plate shape.
  • the substrate 30 has a substrate 31, an insulating frame 33 provided on the substrate 31, and a plurality of substrate electrodes provided on the substrate 31, as shown in FIGS.
  • the plurality of substrate electrodes of the substrate 30 are connection electrodes 35a, 35b, 35c, 35d, sealing electrodes 36a, 36b, external electrodes 37a, 37b, 37c, 37d, side electrodes 38a, 38b, 38c, 38d, including.
  • Plated metal layers 34a and 34b are provided on the surfaces of these substrate electrodes.
  • the base 31 is made of an insulating material such as ceramic.
  • the base 31 is a plate-like member. 1 and 2, the base 31 has main surfaces 32a and 32b on both sides in the thickness direction and a plurality of side surfaces 32c.
  • the main surface 32a faces the sealing space S in the assembled state, and is the main surface on which the crystal vibrating element 10 is mounted with the conductive holding member 45 interposed therebetween.
  • the main surface 32b faces an external mounting board (not shown).
  • the main surface 32a has a peripheral edge portion 321 and a central portion 322 surrounded by the peripheral edge portion 321, as shown in FIG.
  • the peripheral portion 321 is a region for joining the substrate 30 and the lid member 20 together.
  • the central portion 322 is a region for mounting the crystal resonator element 10 .
  • connection electrode 35, external electrode 37, side electrode 38 The connection electrodes 35a and 35b are an example of first electrodes.
  • the connection electrodes 35 a and 35 b are electrodes for supplying voltage to the excitation electrodes 14 a and 14 b of the crystal vibrating element 10 .
  • the connection electrodes 35a and 35b are provided on the main surface 32a.
  • the connection electrodes 35a, 35b are electrically connected to the connection electrodes 15a, 15b through the conductive holding members 45a, 45b, as shown in FIG.
  • the connection electrodes 35a, 35b can supply voltage to the excitation electrodes 14a, 14b via the conductive holding members 45a, 45b and the connection electrodes 15a, 15b.
  • connection electrodes 35a and 35b have first ends 351a and 351b provided in the peripheral portion 321 and second ends 352a and 352b provided in the central portion 322, as shown in FIG. In the assembled state, the first ends 351a and 351b are in contact with the insulating frame 33, as shown in FIG.
  • the second ends 352a and 352b are provided at positions corresponding to the connection electrodes 15a and 15b of the crystal vibrating element 10, as shown in FIGS. 1 and 2, and are in contact with the conductive holding members 45a and 45b.
  • connection electrodes 35c and 35d are not electrodes for supplying voltage to the crystal vibrating element 10, but so-called dummy electrodes. Alternatively, the connection electrodes 35c and 35d may be electrodes that supply a ground voltage.
  • the connection electrodes 35c and 35d are provided on the peripheral portion 321 as shown in FIG. The connection electrodes 35c and 35d are in contact with the insulating frame 33 in the assembled state.
  • the external electrodes 37a, 37b, 37c, and 37d are terminals for electrical connection with an external mounting substrate.
  • the external electrodes 37 a and 37 b are electrodes for supplying a voltage to the crystal vibrating element 10 .
  • the external electrodes 37c and 37d are not electrodes for supplying a voltage to the crystal vibrating element 10, but so-called dummy electrodes.
  • the external electrodes 37c, 37d may be electrodes that supply a ground voltage.
  • the external electrodes 37a, 37b, 37c, and 37d are provided at four corners of the main surface 32b, as shown in FIG.
  • the side electrodes 38a, 38b, 38c, 38d are electrodes for electrically connecting the connection electrodes 35a, 35b, 35c, 35d to the external electrodes 37a, 37b, 37c, 37d.
  • Side electrodes 38a, 38b, 38c, and 38d are provided at four corners of side surface 32c, as shown in FIG.
  • the insulating frame 33 is configured to suppress spreading of the adhesive for joining the lid member 20 and the substrate 30, that is, the insulating layer 42 and the joining member 43 before being cured.
  • the insulating frame 33 is made of an insulating material such as a glass material.
  • the insulating frame 33 is a frame-shaped member, as shown in FIG. In a plan view of the main surface 32a, the insulating frame 33 is provided to surround the crystal resonator element 10 and to cover the connection electrodes 35a and 35b and the connection electrodes 35c and 35d. is provided. Plated metal layers 34a and 34b are interposed between the insulating frame 33 and the portions of the connection electrodes 35a and 35b and the connection electrodes 35c and 35d covered by the insulating frame 33 .
  • seams 50a and 50b are formed between the insulating frame 33 and the connection electrodes 35a and 35b.
  • the seam portions 50a, 50b have first seam portions 51a, 51b and second seam portions 52a, 52b.
  • the insulating frame 33 has an inner peripheral edge 331 and an outer peripheral edge 332, as shown in FIGS.
  • the insulating frame 33 is provided so as to intersect the connection electrodes 35a and 35b from the inner peripheral edge 331 side to the outer peripheral edge 332 side, as shown in FIG.
  • the first seams 51a and 51b are formed at the intersections of the inner peripheral edge 331 of the insulating frame 33 and the connection electrodes 35a and 35b, and are connected to the outer peripheral edge 332 of the insulating frame 33.
  • Second joint portions 52a and 52b are formed at intersections with the electrodes 35a and 35b.
  • the sealing electrodes 36a and 36b are examples of second electrodes. Further, the sealing electrodes 36a and 36b are electrodes for improving the airtightness of the sealing space S. As shown in FIG. The sealing electrodes 36a and 36b are provided so as to cover joint portions 50a and 50b between the insulating frame 33 and the connection electrodes 35a and 35b. In the example shown in FIG. 3, the sealing electrodes 36a and 36b are provided so as to cover the first joint portions 51a and 51b.
  • the arrangement positions of the sealing electrodes 36a and 36b are not limited to the contents described above.
  • the sealing electrodes 36a and 36b may be provided at the second seam portions 52a and 52b so as to cover the seam portions 52a and 52b.
  • the sealing electrodes 36a and 36b may be provided on both the first joint portions 51a and 51b and the second joint portions 52a and 52b.
  • the sealing electrodes 36a and 36b may be provided at both end portions of the joint portions 50a and 50b corresponding to both end sides of the joint portions 50a and 50b.
  • the plated metal layers 34a and 34b are plated layers containing a nickel (Ni) component and a gold (Au) component.
  • the plated metal layers 34a and 34b include a Ni plated layer directly formed on the surface of each substrate electrode and an Au plated layer formed on the Ni plated layer.
  • the plated metal layers 34a, 34b are formed in portions including between the connection electrodes 35a, 35b and the sealing electrodes 36a, 36b.
  • the plated metal layers 34a and 34b as shown in FIGS. between the rear surfaces 369a and 369b, on the second surfaces 368a and 368b of the sealing electrodes 36a and 36b, and between the first surfaces 358a and 358b of the connection electrodes 35a and 35b facing each other and the rear surface 339 of the insulating frame 33. formed between.
  • the plated metal layers 34a, 34b as shown in FIGS. second plated metal layers 341a and 341b formed on the second surfaces 368a and 368b of the sealing electrodes 36a and 36b; and first surfaces of the connection electrodes 35a and 35b. 358a, 358b and an insulating frame-side plated metal layer (part of plated metal layers 3411a, 3411b to be described later) formed between the back surface 339 of the insulating frame 33 .
  • the first plated metal layers 341a, 341b are in close contact with the first surfaces 358a, 358b and the second back surfaces 369a, 369b, respectively, as shown in FIGS.
  • the first plated metal layers 341a and 341b are composed of two Ni plated layers formed on the respective surfaces of the first surfaces 358a and 358b and the second back surfaces 369a and 369b, and an Au layer sandwiched between the two Ni plated layers. and a plating layer.
  • the second plated metal layers 342a, 342b are formed on the second surfaces 368a, 368b as shown in FIG.
  • the second plated metal layers 342a and 342b have a Ni plated layer directly formed on the surfaces of the second surfaces 368a and 368b and an Au plated layer formed on the Ni plated layer.
  • the insulating frame-side plated metal layer is in close contact with the central portions of the first surfaces 358a and 358b and the back surface 339, but is not in close contact with both end sides of the back surface 339. Therefore, an insulating frame-side gap S20 is formed between the insulating frame-side plated metal layer and the insulating frame 33, specifically, at both ends of the insulating frame-side plated metal layer in the short direction.
  • the insulating frame side plated metal layer has a Ni plated layer directly formed on the surfaces of the first surfaces 358a and 358b and an Au plated layer formed on the Ni plated layer.
  • the insulating-frame-side gap S20 between the insulating-frame-side plated metal layer and the insulating frame 33 is the first gap between the connecting electrodes 35a, 35b and the insulating frame 33 on the inner peripheral edge 331 side of the insulating frame 33. It is blocked by plated metal layers 341a and 341b. Thus, according to the first plated metal layers 341a and 341b, even if the insulating frame side gap S20 exists, the sealing property of the sealing space S is not affected. In other words, the hermeticity of the sealing space S is protected by the first plated metal layers 341a and 341b. Note that the insulating frame side gap S20 is generated in the manufacturing process of the substrate 30 . The mechanism for forming the insulating frame side gap S20 will be described together with the description of the manufacturing process of the substrate 30. FIG.
  • the conductive holding member 45 is a hardened adhesive material for electrically connecting the connection electrodes 15 a and 15 b of the crystal vibrating element 10 and the connection electrodes 35 a and 35 b of the substrate 30 . Also, the conductive holding member 45 is formed by thermally curing a conductive adhesive, for example. The conductive holding member 45 formed in this way allows the crystal oscillator 10 to be held on the substrate 30 so that it can be excited.
  • the lid member 20 has a box shape with an opening formed on the side to be joined to the substrate 30 .
  • the material of the lid member 20 is, for example, a conductive material such as metal.
  • the lid member 20 is bonded to the main surface 32a of the substrate 30 so as to seal the crystal vibrating element 10, as shown in FIG. In this way, the inner surface of the lid member 20 and the central portion 322 of the main surface 32a of the substrate 30 form a sealing space S that seals the crystal vibrating element 10 .
  • the insulating layer 42 is a structure for insulating the lid member 20 and the electrodes of the substrate 30 .
  • the insulating layer 42 is provided inside the inner peripheral edge 331 of the insulating frame 33 at the peripheral edge portion 321, as shown in FIGS.
  • the insulating layer 42 is made of an insulating material such as epoxy, silicon, urethane, or imide resin, or metal oxide.
  • the joining member 43 is a structure for joining the lid member 20 and the substrate 30 together.
  • the joining member 43 is provided on the insulating frame 33 so as to overlap the insulating frame 33, as shown in FIG.
  • the bonding member 43 may be made of either thermosetting resin or photo-setting resin.
  • the joining member 43 is made of, for example, an epoxy-based, silicon-based, urethane-based, or imide-based resin adhesive.
  • the total height of the insulating layer 42 and the joining member 43 laminated in the thickness direction of the substrate 30 is preferably equal to or less than the height of the insulating frame 33. In this way, it is possible to reliably prevent the insulating layer 42 and the bonding member 43 from spreading before being cured.
  • FIG. 6 is a flow chart for explaining the method of manufacturing the crystal oscillator 1.
  • FIG. 7 is a flowchart for explaining the details of step S10 in FIG.
  • FIG. 8 is a diagram showing the state of the connection electrode and the sealing electrode when step S14 of FIG. 7 is performed.
  • 9 is a cross-sectional view taken along line IX-IX of FIG. 8.
  • FIG. 10 is a cross-sectional view taken along the line XX of FIG. 8.
  • the substrate 30 is prepared (S10).
  • step S10 the substrate 31 is prepared (S11).
  • Step S11 is an example of the preparation process. Specifically, a substrate 31 made of ceramic and having main surfaces 32a and 32b is prepared.
  • connection electrodes 35a and 35b are formed on the main surface 32a of the substrate 31 (S12).
  • Step S12 is an example of the first electrode forming step.
  • the connection electrodes 35a and 35b are formed by printing an electrode material containing a glass component on the main surface 32a and baking the printed material. Further, in step S12, the glass component contained in the electrode material is precipitated by baking the electrode material.
  • the connection electrodes 35a and 35b thus baked have first glass frit layers 350a and 350b formed to cover the surfaces thereof, as shown in FIGS.
  • the glass component contained in the electrode material precipitates due to the shape of the connection electrodes 35a and 35b in the width direction, it precipitates in the center portion of the connection electrodes 35a and 35b in the width direction.
  • the glass flows into both lateral ends of the connection electrodes 35a and 35b.
  • the first glass frit layers 350a and 350b are not formed with a uniform thickness on the surfaces of the connection electrodes 35a and 35b.
  • the thickness of both ends of the first glass frit layers 350a and 350b corresponding to both ends of the connection electrodes 35a and 35b in the width direction is equal to the thickness of the central portion of the connection electrodes 35a and 35b in the width direction. It is larger than the thickness of the central portion of the corresponding first glass frit layers 350a and 350b.
  • step S12 the other substrate electrodes (excluding the sealing electrodes 36a and 36b) are formed using the same electrode material and the same forming method as those of the connection electrodes 35a and 35b. It is formed on each side surface 32c. Therefore, the description of the manufacturing of those substrate electrodes is omitted.
  • the insulating frame 33 is formed on the main surface 32a of the base 31 (S13).
  • Step S13 is an example of the insulating frame forming process.
  • the insulating frame 33 is formed by printing and firing a glass material over the entire circumference of the peripheral portion 321 of the main surface 32a.
  • the insulating frame 33 is provided so as to surround the region where the crystal resonator element 10 is mounted as shown in FIG. It is formed so as to partially cover the first glass frit layers 350a and 350b on the surfaces of 35a and 35b.
  • a part of the first glass frit layers 350a, 350b is formed so as to be sandwiched between the connection electrodes 35a, 35b and the insulating frame 33, as shown in FIG.
  • the part of the first glass frit layers 350a and 350b may be referred to as "insulating frame side part".
  • the insulating frame 33 is provided so as to intersect the connection electrodes 35a and 35b from the inner peripheral edge 331 side to the outer peripheral edge 332 side.
  • joint portions 50a and 50b are formed at positions where the inner peripheral edge 331 of the insulating frame 33 and the first glass frit layers 350a and 350b on the surfaces of the connection electrodes 35a and 35b are connected. .
  • the sealing electrodes 36a and 36b are formed at the seams 50a and 50b between the insulating frame 33 and the connection electrodes 35a and 35b (S14).
  • Step S14 is an example of the second electrode forming step. Specifically, an electrode material containing a glass component is printed on the first seam portions 51a and 51b of the seam portions 50a and 50b on the side of the inner peripheral edge 331 of the insulating frame 33, and fired to form a sealing electrode. 36a and 36b are formed. Further, in step S14, similarly to step S12, the glass component contained in the electrode material is precipitated by baking the electrode material. Thus, the baked sealing electrodes 36a, 36b have second glass frit layers 360a, 360b formed to cover their surfaces, as shown in FIGS.
  • the sealing electrodes 36a and 36b are located on the surfaces of the connection electrodes 35a and 35b and on the inner peripheral edge 331 side of the insulating frame side 33. It is formed so as to cover other parts of 350 a and 350 b and part of the insulating frame 33 .
  • other parts of the first glass frit layers 350a and 350b may be referred to as "sealing electrode side parts".
  • the first glass frit layers 350a and 350b on the surfaces of the connection electrodes 35a and 35b are partially formed on the insulating frame side so as to form the connection electrode 35a as shown in FIG. , 35b and the insulating frame 33, while a part of the sealing electrode side is sandwiched between the connecting electrodes 35a, 35b and the sealing electrodes 36a, 36b as shown in FIG.
  • connection electrodes 35a, 35b and the sealing electrodes 36a, 36b are plated (S15).
  • Step S15 is an example of the plating process. Further, step S15 is a process performed after steps S11 to S14 are sequentially performed. Specifically, in step S15, a plating solution containing a Ni component and an Au component is used to grow a plating metal on a portion including between the connection electrodes 35a, 35b and the sealing electrodes 36a, 36b, thereby forming a plating metal layer. 34a and 34b are formed.
  • step S15 first, the first glass frit layers 350a, 350b and The second glass frit layers 360a and 360b are removed.
  • portions of the first glass frit layers 350a and 350b on the side of the sealing electrodes are removed, leaving a first space S1 between the connection electrodes 35a and 35b and the sealing electrodes 36a and 36b.
  • portions of the first glass frit layers 350a and 350b on the insulating frame side are removed to form a second space S2 between the connection electrodes 35a and 35b and the insulating frame 33.
  • the first space S1 and the second space S2 are spaces connected to each other and have the same shape.
  • connection electrodes 35a and 35b are formed from the first space S1 to the second space S2, the first surfaces 358a and 358b of the connection electrodes 35a and 35b
  • the plated metal layers 3411a and 3411b are also formed from the first space S1 to the second space S2.
  • the plated metal layers 3412a and 3412b are formed on the second rear surfaces 369a and 369b of the sealing electrodes 36a and 36b, so they are formed only in the first space S1. ing.
  • the plated metal layers 3411a and 3411b formed on the first surfaces 358a and 358b grow in the first direction D1, while the second back surfaces grow.
  • the plated metal layers 3412a and 3412b formed on 369a and 369b grow in the second direction D2 opposite to the first direction D1.
  • the plating process according to this embodiment is performed until the plated metal layers 3411a and 3411b and the plated metal layers 3412a and 3412b come into contact with each other.
  • the plating processing time t is the time required from the start of film formation until the plated metal layers 3411a and 3411b come into contact with the plated metal layers 3412a and 3412b. After the plating processing time t has passed, the plating processing ends.
  • the first space S1 as shown in FIG. It is filled with metal layers 341a and 341b.
  • the second space S2 as shown in FIG. 5, only the portions of the plated metal layers 3411a and 3411b located in the second space S2 are formed. S20 remains.
  • the opening of the insulating frame-side gap S20 toward the first space S1 that is, the opening of the insulating frame-side gap S20 on the inner peripheral edge 331 side of the insulating frame 33 is located in the first space S1 as shown in FIG. It is closed by the formed first plated metal layers 341a and 341b, specifically, the plated metal layers 3412a and 3412b of the first plated metal layers 341a and 341b.
  • the crystal vibrating element 10 is mounted on the main surface 32a of the substrate 30 via the conductive holding member 45 (S20).
  • Step S20 is a step of providing a conductive adhesive between the connection electrodes 15a and 15b of the crystal vibrating element 10 and the substrate 30, and holding the crystal by the conductive holding members 45a and 45b obtained by curing the conductive adhesive.
  • a conductive adhesive that is, the conductive holding members 45a and 45b before being thermally cured are provided on the connection electrodes 35a and 35b provided on the main surface 32a of the substrate 30 .
  • the crystal vibrating element 10 is placed on the conductive holding agent so that the connection electrodes 15a and 15b of the crystal vibrating element 10 are in contact with the conductive holding agent.
  • the conductive adhesive is thermally cured.
  • the crystal vibrating element 10 is bonded to the substrate 30 by the conductive holding members 45a and 45b obtained by thermally curing the conductive adhesive.
  • the lid member 20 is joined to the substrate 30 (S30).
  • the bonding member 43 and the insulating layer 42 are provided on the peripheral edge portion 321 of the main surface 32 a of the substrate 30 on the side of the inner peripheral edge 331 of the insulating frame 33 , and the bonding member 43 and the insulating layer 42 are provided on the cover member 20 . and the main surface 32a of the substrate 30. Then, the lid member 20 is bonded to the substrate 30 by heating the bonding member 43 and the insulating layer 42 . In this way, the crystal vibrating element 10 is sealed in the sealing space S formed by the lid member 20 and the substrate 30 .
  • the firing steps of the connection electrodes 35a and 35b, the insulating frame 33, and the sealing electrodes 36a and 36b are performed in steps S12, S13, and S14, respectively.
  • the firing process is not limited to the contents described above.
  • steps S12, S13, and S14 only the connection electrodes 35a and 35b, the insulating frame 33, and the sealing electrodes 36a and 36b are printed, and after steps S12, S13, and S14 are performed, And before step S15 is performed, the printed connection electrodes 35a, 35b, insulating frame 33, and sealing electrodes 36a, 36b may be baked together.
  • the first glass frit layers 350a and 350b and the second glass frit layers 360a and 360b are formed after firing.
  • FIG. 11 is a diagram showing a sealing state of a crystal oscillator according to a comparative example.
  • the configuration of the substrate 90 according to the comparative example shown in FIG. 11 will be described.
  • the difference between the substrate 90 according to the comparative example and the substrate 30 according to this embodiment is that the substrate 90 according to the comparative example does not employ the sealing electrodes 36a and 36b according to this embodiment.
  • Other configurations of the substrate 90 are the same as those of the substrate 30 according to this embodiment. Therefore, in the manufacturing process of the substrate 90, the shapes of the glass frit layers formed on the surfaces 958a and 958b of the connection electrodes 95a and 95b of the substrate 90 are the same as those of the first glass frit layers 350a and 350b.
  • the thickness of the glass frit layer corresponding to both ends in the short direction of the connection electrodes 95a and 95b is It is larger than the thickness of the glass frit layer corresponding to the central portion in the width direction of the connection electrodes 95a and 95b.
  • connection electrodes 95a and 95b in the plating process for the connection electrodes 95a and 95b according to the comparative example, a plating solution is used to remove the glass frit layer, and a film forming space is formed between the connection electrodes 95a and 95b and the insulating frame 93.
  • the film forming space S3 since the shape of the glass frit layers is the same as that of the first glass frit layers 350a and 350b, the film forming space S3 also has the same shape as the second space S2 according to this embodiment.
  • the plated metal layers 94a and 94b are formed using the same time as the plating processing time t according to the present embodiment
  • the plated metal layers 94a and 94b are formed in the film forming space S3 as shown in FIG. is the same as the portions in the second space S2 of the plated metal layers 3411a and 3411b according to this embodiment. That is, the film formation space S3 is not filled with the plated metal layers 94a and 94b, and gaps remain on both end sides of the film formation space S3.
  • the airtightness of the sealing space S may deteriorate, and the quality of the crystal oscillator 1 may be affected.
  • the film forming space S3 can be filled, but the time is double the plating processing time t according to the present embodiment. Become. As a result, the manufacturing time of the substrate according to the comparative example becomes longer, and the production efficiency deteriorates.
  • the sealing electrodes 36a and 36b when forming the first plated metal layers 341a and 341b in the first space S1, the first surfaces 358a of the connection electrodes 35a and 35b are , 358b and the second rear surfaces 369a and 369b of the sealing electrodes 36a and 36b, respectively, to simultaneously form plated metal layers 3411a and 3411b and plated metal layers 3412a and 3412b.
  • the plated metal layers 3411a and 3411b formed on the first surfaces 358a and 358b grow in the first direction D1
  • the plated metal layers 3411a and 3411b formed on the second back surfaces 369a and 369b grow in the first direction D1.
  • Layers 3412a and 3412b grow in a second direction D2 opposite to the first direction D1. In this way, when the plating processing time t has passed, the plated metal layers 3411a and 3411b and the plated metal layers 3412a and 3412b are brought into contact with each other to form the first plated metal layers 341a and 341b filling the first space S1. Form.
  • the insulating frame-side gap S20 remains on both end sides of the second space S2, but the opening of the insulating frame-side gap S20 on the inner peripheral edge 331 side of the insulating frame 33 is 3, the first plated metal layers 341a and 341b formed in the first space S1, specifically, the plated metal layers 3412a and 3412b of the first plated metal layers 341a and 341b are closed.
  • the connection between the sealing space S and the external space is interrupted by the first plated metal layers 341a and 341b, and the sealing property of the sealing space S is improved.
  • the plating processing time t according to the present embodiment is approximately half the plating processing time according to the comparative example. Therefore, the manufacturing time of the substrate 30 can be shortened by adopting the sealing electrodes 36a and 36b. Therefore, the manufacturing time of the crystal resonator 1 can also be shortened. As a result, the productivity of the substrate 30 and the crystal oscillator 1 can be improved.
  • the crystal oscillator 1 and the method for manufacturing the crystal oscillator 1 that can obtain good sealing performance and productivity are provided.
  • the crystal resonator element 10 the substrate 30 having the main surface 32a on which the crystal resonator element 10 is mounted with the conductive holding member 45 interposed therebetween, and the crystal resonator element 10 and a lid member 20 joined to the substrate 30 so as to form a sealing space S that seals the substrate 30.
  • the substrate 30 is provided on the main surface 32a and is provided with a first electrode that supplies a voltage to the crystal vibration element 10.
  • Connection electrodes 35a and 35b which are examples, an insulating frame 33 provided so as to surround the crystal vibrating element 10 and partially cover the connection electrodes 35a and 35b in a plan view of the main surface 32a, and a main Sealing electrodes 36a and 36b, which are examples of second electrodes, are provided so as to cover joint portions 50a and 50b between the insulating frame 33 and the connection electrodes 35a and 35b in plan view of the surface 32a.
  • connection electrodes 35a and 35b intersect the insulating frame 33 from the inner peripheral edge 331 side of the insulating frame 33 to the outer peripheral edge 332 side of the insulating frame 33 in plan view of the main surface 32a.
  • the joint portions 50a and 50b include first joint portions 51a and 51b on the side of the inner peripheral edge 331 of the insulating frame 33, and the sealing electrodes 36a and 36b are provided at least at the first joint portions 51a and 51b. may be provided. According to the above configuration, the configuration of the sealing electrode can be simplified, and the hermeticity of the sealing space S can be improved.
  • the plated metal layers 34a, 34b may be formed in portions including between the connection electrodes 35a, 35b and the sealing electrodes 36a, 36b. According to the above configuration, it is possible to obtain a crystal oscillator having good hermeticity.
  • the plated metal layers 34a and 34b are in close contact with the first surfaces 358a and 358b and the second back surfaces 369a and 369b, which are surfaces of the connection electrodes 35a and 35b and the sealing electrodes 36a and 36b facing each other.
  • the step of preparing the substrate 30 (S10) and the crystal resonator element 10 on the main surface 32a of the substrate 30 with the conductive holding member 45 interposed therebetween. and a step of bonding the cover member to the substrate (S30) so as to form a sealing space S for sealing the crystal oscillator 10, and a step of preparing the substrate (S10 ) is a preparation step (S11) of preparing a substrate having a main surface, and a connection electrode forming step, which is an example of a first electrode forming step, of forming connection electrodes 35a and 35b, which are examples of first electrodes, on the main surface.
  • the connection electrodes 35a and 35b are arranged from the inner peripheral edge 331 side of the insulating frame 33 to the outer peripheral edge 332 side of the insulating frame 33 in plan view of the main surface 32a.
  • the sealing electrode forming step (S14) includes forming the insulating frame 33 on the main surface 32a so as to intersect the insulating frame 33 over at least the insulating frame 33 included in the joint portions 50a and 50b. Forming the sealing electrodes 36a, 36b on the first seam portions 51a, 51b on the side of the inner peripheral edge 331 may be included. According to the above method, the formation of the sealing electrode can be simplified, and the sealing property of the sealing space S can be improved.
  • the plating step (S15) includes growing the plating metal on portions including between the connection electrodes 35a, 35b and the sealing electrodes 36a, 36b to form the plating metal layers 34a, 34b.
  • the plating step (S15) includes growing the plating metal on portions including between the connection electrodes 35a, 35b and the sealing electrodes 36a, 36b to form the plating metal layers 34a, 34b.
  • the formation of the plated metal layers may be performed by forming the first plated metal layers 341a and 341b in close contact with the facing surfaces of the connection electrodes 35a and 35b and the sealing electrodes 36a and 36b. According to the above method, it is possible to obtain a sealed space S with good airtightness.
  • connection electrodes 35a, 35b and the sealing electrodes 36a, 36b are fired to cover the surfaces of the connection electrodes 35a, 35b and the sealing electrodes 36a, 36b, respectively.
  • the plating step (S15) is a step performed after the first glass frit layers 350a, 350b and the second glass frit layers 360a, 360b are formed.
  • first space S1 between the connection electrodes 35a, 35b and the sealing electrodes 36a, 36b by removing the glass frit layers 350a, 350b and the second glass frit layers 360a, 360b; and forming the first plated metal layers 341a and 341b in. According to the above method, the formation of a gap between the connection electrode and the sealing electrode can be avoided, and the sealing property of the sealing space S can be improved.
  • forming the first plated metal layers 341a and 341b may include forming a Ni plating layer and an Au plating layer. According to the above method, a plated metal layer having good performance can be obtained.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
PCT/JP2022/003222 2021-06-23 2022-01-28 圧電振動子及び圧電振動子の製造方法 WO2022269970A1 (ja)

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Citations (4)

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Publication number Priority date Publication date Assignee Title
WO2012140936A1 (ja) * 2011-04-11 2012-10-18 株式会社村田製作所 電子部品及び電子部品の製造方法
JP2013145964A (ja) * 2012-01-13 2013-07-25 Nippon Dempa Kogyo Co Ltd 圧電デバイス及び圧電デバイスの製造方法
JP2015186095A (ja) * 2014-03-25 2015-10-22 京セラクリスタルデバイス株式会社 水晶デバイス
WO2016190090A1 (ja) * 2015-05-27 2016-12-01 株式会社村田製作所 圧電振動素子搭載用基板並びに圧電振動子及びその製造方法

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JP5844100B2 (ja) 2011-09-14 2016-01-13 日本電波工業株式会社 表面実装水晶振動子及びその製造方法
JP2015070386A (ja) 2013-09-27 2015-04-13 京セラクリスタルデバイス株式会社 水晶デバイス
JP2019062259A (ja) 2017-09-25 2019-04-18 日本電波工業株式会社 セラミックパッケージ及びその製造方法、並びに圧電デバイス及び圧電デバイスの製造方法

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Publication number Priority date Publication date Assignee Title
WO2012140936A1 (ja) * 2011-04-11 2012-10-18 株式会社村田製作所 電子部品及び電子部品の製造方法
JP2013145964A (ja) * 2012-01-13 2013-07-25 Nippon Dempa Kogyo Co Ltd 圧電デバイス及び圧電デバイスの製造方法
JP2015186095A (ja) * 2014-03-25 2015-10-22 京セラクリスタルデバイス株式会社 水晶デバイス
WO2016190090A1 (ja) * 2015-05-27 2016-12-01 株式会社村田製作所 圧電振動素子搭載用基板並びに圧電振動子及びその製造方法

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