WO2012140936A1 - 電子部品及び電子部品の製造方法 - Google Patents
電子部品及び電子部品の製造方法 Download PDFInfo
- Publication number
- WO2012140936A1 WO2012140936A1 PCT/JP2012/052228 JP2012052228W WO2012140936A1 WO 2012140936 A1 WO2012140936 A1 WO 2012140936A1 JP 2012052228 W JP2012052228 W JP 2012052228W WO 2012140936 A1 WO2012140936 A1 WO 2012140936A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sealing member
- electronic component
- frame
- resin adhesive
- main surface
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000007789 sealing Methods 0.000 claims abstract description 145
- 229920005989 resin Polymers 0.000 claims abstract description 73
- 239000011347 resin Substances 0.000 claims abstract description 73
- 239000011521 glass Substances 0.000 claims abstract description 70
- 239000010410 layer Substances 0.000 claims abstract description 56
- 239000000853 adhesive Substances 0.000 claims abstract description 54
- 230000001070 adhesive effect Effects 0.000 claims abstract description 54
- 239000012790 adhesive layer Substances 0.000 claims abstract description 25
- 230000002093 peripheral effect Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 46
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 31
- 238000005520 cutting process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 239000012298 atmosphere Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000002073 fluorescence micrograph Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/40—Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
- H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
Definitions
- the present invention relates to an electronic component having a sealing structure and a method for manufacturing the electronic component. More specifically, the present invention relates to an electronic component in which an electronic component main body is disposed in a sealed space and a method for manufacturing the electronic component.
- a sealing structure is generally formed by adhering a sealing member such as a cap or a lid material to a case material on a substrate with an adhesive.
- a sealing member such as a cap or a lid material
- Patent Document 1 discloses an electronic component in which a multilayer ceramic package and a sealing cap are sealed with an epoxy resin adhesive.
- the resin adhesive spreads sideways before the resin adhesive is cured. At this time, if the spread of the resin adhesive spreads to the periphery of the electronic component, the spread resin adhesive may adhere to the mounting electrodes of the substrate, and a solder fillet may not be formed during mounting. As a result, there is a problem that defective mounting of electronic components is likely to occur.
- An object of the present invention is an electronic component in which a sealing member is bonded with a resin adhesive, and an electronic component in which the resin adhesive is not easily spread before being cured, and an electronic component in which the resin adhesive is not easily spread before being cured. It is to provide a method for manufacturing a component.
- the electronic component according to the present invention is bonded to the main surface of the first sealing member so as to form a sealing space together with the first sealing member having the main surface and the main surface of the first sealing member.
- the frame-shaped glass layer is provided so as to be in contact with the outer peripheral line of the frame-shaped adhesion region. In that case, the resin adhesive before curing can be made more difficult to spread.
- the thickness of the frame-shaped glass layer is larger than the thickness of the resin adhesive layer.
- the resin adhesive before curing can be made more difficult to spread due to the step between the thickness of the frame-shaped glass layer and the thickness of the resin adhesive layer.
- an alumina substrate is used as the first sealing member.
- the surface of the alumina substrate is rough, the difference between the surface roughness of the alumina substrate and the surface roughness of the frame-shaped glass layer is large. Therefore, when using an alumina substrate, the spread of the resin adhesive before curing can be more effectively suppressed by providing a frame-shaped glass layer.
- the method for manufacturing an electronic component according to the present invention includes a step of preparing an original sealing member to be cut into a plurality of the first sealing members in a later step, and glass on a part of a main surface of the original sealing member.
- the glass layer is formed in a frame shape on a part of the main surface of the original sealing member, and then the original sealing member is cut, whereby the outer peripheral line of the frame-shaped adhesion region and the first sealing
- the 1st sealing member by which the frame-shaped glass layer was provided between the peripheral parts of the main surface of a member can be obtained efficiently. Therefore, the electronic component of the present invention can be efficiently manufactured.
- the frame is provided between the outer peripheral line of the frame-shaped adhesion region and the peripheral portion of the main surface of the first sealing member. Since the glass-like glass layer is provided, the surface roughness of the portion where the frame-like glass layer is provided is reduced. Therefore, it is difficult for the resin adhesive to spread to the peripheral edge portion of the first sealing member due to the surface tension of the resin adhesive. Therefore, it is possible to provide an electronic component in which the resin adhesive before curing is difficult to spread.
- FIG. 1 is a schematic exploded perspective view of an electronic component according to an embodiment of the present invention.
- FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG.
- FIG. 3 is a schematic plan view of an original sealing member used in a method for manufacturing an electronic component according to an embodiment of the present invention.
- FIG. 4 is an ultraviolet photograph of the glass surface coated with a resin adhesive.
- FIG. 5 is an ultraviolet photograph of the surface of an alumina substrate coated with a resin adhesive.
- FIG. 6 is a 2000 ⁇ magnified photograph of the surface of an alumina substrate coated with glass taken with a scanning electron microscope (SEM).
- FIG. 7 is a photograph showing a part of the piezoelectric vibration device manufactured in the example.
- FIG. 8 is a photograph showing a part of the piezoelectric vibration device fabricated in Comparative Example 1.
- FIG. 1 is a schematic exploded perspective view of an electronic component 1 according to this embodiment.
- FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG.
- the electronic component 1 includes first and second sealing members 10 and 15. Specifically, the second sealing member 15 is bonded to the main surface of the first sealing member 10 in the frame-shaped bonding region inside the peripheral edge of the first sealing member 10. . Thereby, the first and second sealing members 10 and 15 form a sealing space 15a.
- the 1st sealing member 10 consists of a plate-shaped alumina substrate
- the 2nd sealing member 15 consists of a metal cap which has the opening opened below.
- the shapes of the first and second sealing members 10 and 15 are not particularly limited as long as the sealing space 15a can be formed.
- the 1st and 2nd sealing members 10 and 15 can be formed with a metal, ceramics, resin, etc., for example.
- the first sealing member 10 may have a shape having an opening opened upward
- the second sealing member 15 may have a plate shape.
- first and second sealing members 10 and 15 may have a function other than the function of forming the sealing space 15a.
- the first sealing member 10 has a function of mounting an electronic component main body 20 described later and pulling out the electrodes of the electronic component main body 20 to the outside.
- the first and second sealing members 10 and 15 are bonded by the resin adhesive layer 13 in the frame-shaped bonding region.
- the resin adhesive that forms the resin adhesive layer 13 is not particularly limited as long as it can adhere the first and second sealing members 10 and 15.
- the resin adhesive layer 13 may be one using a thermosetting resin or one using a photocurable resin.
- the resin adhesive layer 13 can be formed of, for example, an epoxy-based, silicon-based, urethane-based, or imide-based resin adhesive.
- the insulating layer 14 insulates the first and second sealing members 10 and 15. In the present embodiment, since the first sealing member 10 has conductivity, it is preferable to provide the insulating layer 14. However, when the first sealing member 10 has insulating properties, the insulating layer 14 is It is not an essential component and may not be provided.
- the insulating layer 14 can be formed of, for example, an epoxy-based, silicon-based, urethane-based, or imide-based resin, or a metal oxide.
- a frame-shaped glass layer 11 is provided on the main surface of the first sealing member 10, the outer peripheral line of the frame-shaped adhesive region to which the second sealing member 15 is bonded, and the peripheral portion of the main surface of the first sealing member 10 Between them, a frame-shaped glass layer 11 is provided.
- the surface roughness of the frame-shaped glass layer 11 is preferably smaller than the surface roughness of the first sealing member 10.
- the glass layer 11 can be formed of glass containing silicon oxide or zinc oxide, for example.
- the glass layer 11 may be made of, for example, semicrystalline glass.
- the thickness of the frame-shaped glass layer 11 is preferably larger than the thickness of the resin adhesive layer 13. In that case, the spread of the resin adhesive layer 13 before curing can be effectively suppressed by the step between the thickness of the frame-shaped glass layer 11 and the thickness of the resin adhesive layer 13.
- the electronic component body 20 is disposed in the sealing space 15a.
- the electronic component main body 20 is mounted on the first sealing member 10.
- the electronic component main body 20 is composed of a piezoelectric vibrator.
- the electronic component main body 20 does not necessarily need to be a piezoelectric vibrator.
- the electronic component body 20 may be, for example, an acoustic wave element such as a surface acoustic wave element.
- the electronic component main body 20 includes a piezoelectric substrate 22 and a pair of electrodes 21 and 23.
- the electrode 21 is formed on the upper surface of the piezoelectric substrate 22, and the electrode 23 is formed on the lower surface of the piezoelectric substrate 22 so as to face the electrode 21. Further, the electrode 21 is drawn to the lower surface through the side surface of the piezoelectric substrate 22.
- a voltage can be applied to the piezoelectric substrate 22 from the pair of electrodes 21 and 23.
- the electrodes 21 and 23 can be formed of an appropriate conductive material. Examples of such a conductive material include metals such as aluminum, silver, copper, and gold, and alloys containing at least one of these metals.
- the wiring electrode 10 a is formed on the main surface of the first sealing member 10.
- the wiring electrode 10 a is connected to the electrodes 21 and 23.
- the electrode of the electronic component main body 20 is pulled out by the wiring electrode 10a.
- the wiring electrode 10a is connected to the terminal electrode 10b.
- the terminal electrode 10 b is formed in a notch in the corner portion of the first sealing member 10.
- the wiring electrode 10a and the terminal electrode 10b can be formed of an appropriate conductive material. Examples of such a conductive material include metals such as aluminum, silver, copper, and gold, and alloys containing at least one of these metals.
- the wiring electrode 10 a and the electrodes 21 and 23 are bonded by the conductive adhesive layer 12.
- FIG. 3 is a schematic plan view of the original sealing member 30 on which the frame-shaped glass layer 11 is formed in the present embodiment.
- the original sealing member 30 is prepared.
- the original sealing member 30 is a member that is cut so as to become a plurality of the first sealing members 10 by a process described later. Therefore, the original sealing member 30 is made of the same material as the first sealing member 10.
- the original sealing member 30 is a plate-like mother substrate of the first sealing member 10 made of an alumina substrate. Therefore, the raw sealing member 30 is made of plate-like alumina.
- the glass layer 11 is formed in a frame shape on a part of the main surface of the original sealing member 30.
- the formation method of the frame-shaped glass layer 11 is not specifically limited, For example, it can form by printing after printing.
- the frame-shaped glass layer 11 When the frame-shaped glass layer 11 is formed, the frame-shaped glass layer 11 may be formed so as to have an in-frame area that is equal to or larger than the area surrounded by the outer peripheral edge of the second sealing member 15. preferable. Accordingly, the second sealing member 15 can be directly bonded onto the main surface of the first sealing member 10 when the first and second sealing members 10 and 15 described later are bonded. In order to produce a plurality of first sealing members 10 from the original sealing member 30, it is preferable to form a glass layer on the original sealing member 30 in a lattice shape so as to include a plurality of in-frame regions having the above sizes.
- the frame-shaped glass layer 11 is too thick, glass chipping may occur when the raw sealing member 30 described later is cut. Therefore, it is preferable to form the frame-shaped glass layer 11 so that the thickness is 10 ⁇ m or less.
- the original sealing member 30 is cut to produce the first sealing member 10.
- the original sealing member 30 is cut so as to include a portion where the frame-shaped glass layer 11 is formed. Thereby, the frame-shaped glass layer 11 is provided in the vicinity of the peripheral portion on the main surface of the obtained first sealing member 10.
- the cutting method of the original sealing member 30 is not particularly limited as long as the original sealing member 30 and the frame-shaped glass layer 11 can be cut.
- the original sealing member 30 can be cut by, for example, a dicing blade.
- the electronic component body 20 is prepared.
- the electronic component main body 20 is mounted on the first sealing member 10.
- the electronic component main body 20 is mounted by being bonded to the wiring electrode 10 a formed on the main surface of the first sealing member 10 via the conductive adhesive layer 12.
- the electronic component body 20 may be mounted using solder or the like.
- a second sealing member 15 is prepared.
- the second sealing member 15 is placed on the main surface of the first sealing member 10 in the frame formed by the frame-shaped glass layer 11 with the resin adhesive layer 13 and the insulating layer 14 interposed therebetween. And glue.
- the adhesion method of the 1st and 2nd sealing members 10 and 15 is not specifically limited as long as it is the adhesion method through the resin adhesive layer 13, For example, it can carry out by hot press.
- the atmosphere at the time of bonding the first and second sealing members 10 and 15 may be an atmospheric pressure atmosphere or a reduced pressure atmosphere.
- the sealed space 15a can be a reduced pressure atmosphere.
- the atmosphere may be an air atmosphere, a nitrogen gas atmosphere, an argon gas atmosphere, or the like.
- the first and second sealing members 10 and 15 are bonded.
- the first and second sealing members 10 and 15 may be bonded before the original sealing member 30 is cut. In that case, after the glass layer 11 is formed in a frame shape on the original sealing member 30, the electronic component main body 20 is mounted, and then the first and second sealing members 10 and 15 are bonded. Thereafter, the original sealing member 30 is cut.
- the resin adhesive layer 13 is cured to manufacture the electronic component 1 of the present embodiment.
- the method for curing the resin adhesive layer 13 is not particularly limited.
- the resin adhesive layer 13 may be cured by heating or may be cured by being left to stand. In order to suppress the spread of the resin adhesive before curing, it is preferable to quickly cure the resin adhesive layer 13 after the first and second sealing members 10 and 15 are bonded.
- the electronic component 1 of the present embodiment on the main surface of the first sealing member 10, a peripheral portion of the first sealing member 10 and a frame-shaped adhesive region where the resin adhesive layer 13 is provided. Since the frame-shaped glass layer 11 is provided between them, an electronic component in which the resin adhesive before being hardened hardly spreads to the peripheral portion of the first sealing member 10 can be provided.
- the above effect will be described with reference to FIGS.
- FIG. 4 is an ultraviolet photograph of the glass surface coated with a resin adhesive.
- FIG. 5 is an ultraviolet photograph of the surface of an alumina substrate coated with a resin adhesive. In the ultraviolet photographs shown in FIGS. 4 and 5, the bright part indicates the part where the resin adhesive is present. 4 and 5, a resin adhesive is applied in a substantially circular shape. On the outside of the resin adhesive, bleeding of the applied resin adhesive occurs.
- the applied resin adhesive spreads widely on the surface of the alumina substrate.
- the spread of the applied resin adhesive remains on the glass surface in the vicinity of the substantially circular shape to which the resin adhesive is applied. That is, the spread of the resin adhesive can be significantly suppressed on the glass surface as compared with the surface of the alumina substrate.
- FIG. 6 is a 2000 times magnified photograph of the surface of an alumina substrate coated with glass taken with a scanning electron microscope (SEM).
- the rough surface seen in the upper half of FIG. 6 is an alumina substrate surface not coated with glass.
- the smooth surface seen in the lower half of FIG. 6 is a glass surface obtained by applying glass to an alumina substrate.
- the surface roughness of the alumina substrate surface can be reduced.
- the surface tension of the resin adhesive increases. Therefore, compared to the surface of the alumina substrate, the resin adhesive is less likely to spread due to surface tension on the surface of the substrate coated with glass.
- Example 2 A piezoelectric vibration device having a configuration substantially similar to that of the electronic component 1 shown in FIGS. 1 and 2 was produced in the following manner.
- a mother substrate made of alumina was prepared as the raw sealing member 30 shown in FIG.
- a glass-like glass layer having a thickness of 10 to 12 ⁇ m was formed on the main surface of the mother substrate by applying glass in a grid pattern as shown in FIG. At this time, on the main surface of the mother substrate, an area necessary for bonding a metal cap described later was left as a portion where glass was not applied.
- the mother substrate was cut so as to include the portion where the frame-shaped glass layer was applied, and an alumina substrate as the first sealing member 10 was produced.
- a piezoelectric vibrator as the electronic component main body 20 was mounted on an alumina substrate.
- the metal cap as the second sealing member 15 formed of 42 nickel is framed with an epoxy resin adhesive in a frame formed of a frame-shaped glass layer on the main surface of the alumina substrate. It was applied in the shape and bonded by hot pressing.
- the resin adhesive was cured by heating in an oven to produce a piezoelectric vibration device.
- the thickness of the resin adhesive on the bonding surface between the alumina substrate and the metal cap was about 10 ⁇ m.
- FIG. 7 is a fluorescence micrograph showing a part of the piezoelectric vibration device created in the example.
- FIG. 8 is a fluorescence micrograph showing a part of the piezoelectric vibration device created in Comparative Example 1.
- the dark part at the lower right is a metal cap.
- the bright part seen around the metal cap is a resin adhesive spread from the bonding surface of the alumina substrate and the metal cap.
- the spread of the resin adhesive is sufficiently suppressed. This is probably because the surface tension of the resin adhesive worked effectively because the surface roughness of the frame-shaped glass layer formed near the peripheral edge of the alumina substrate was small. Moreover, since the thickness of the frame-shaped glass layer is larger than the thickness of the resin adhesive, the spread of the resin adhesive is suppressed by the step between the thickness of the frame-shaped glass layer and the thickness of the resin adhesive layer. It is also possible.
- the fixing strength was 20% lower than that of the piezoelectric vibration device of the example.
- the glass substrate is not formed on the bonding surface between the alumina substrate and the metal cap, thereby maintaining the bonding strength between the alumina substrate and the metal cap, and the resin bonding. The spread of the agent can be suppressed.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
封止部材15を板状としてもよい。また、第1及び第2の封止部材10,15の両方を開口縁同士で接合される形状としてもよい。
(実施例)
図1及び図2に示す電子部品1と実質的に同様の構成を有する圧電振動装置を、以下の要領で作製した。
マザー基板にガラスを塗布しなかったこと以外は、実施例と同様にして、圧電振動装置を作製した。
マザー基板の全面にガラスを塗布し、アルミナ基板と金属キャップとをガラス層を介して接着したこと以外は、実施例と同様にして、圧電振動装置を作製した。
実施例及び比較例1により作製した圧電振動装置について、樹脂接着剤の広がりを確認した。図7は、実施例において作成した圧電振動装置の一部分を示す蛍光顕微鏡写真である。図8は、比較例1において作成した圧電振動装置の一部分を示す蛍光顕微鏡写真である。図7及び図8に示される蛍光顕微鏡写真において、右下の暗い部分は金属キャップである。金属キャップの周囲に見られる明るい部分は、アルミナ基板と金属キャップの接着面から広がった樹脂接着剤である。
実施例及び比較例2により作製した圧電振動装置の金属キャップに、上記金属キャップに対して水平な力を、ボールシェアテスター(RHESCA社製、ボンディングテスタ、「PTR-1000」)によって徐々に加えた。上記金属キャップがアルミナ基板から剥がれたときの力を測定することによって、アルミナ基板と金属キャップとの固着強度を測定した。
10…第1の封止部材
10a…配線電極
10b…端子電極
11…ガラス層
12…導電性接着剤層
13…樹脂接着剤層
14…絶縁層
15…第2の封止部材
15a…封止空間
20…電子部品本体
21,23…電極
22…圧電基板
30…原封止部材
Claims (5)
- 主面を有する第1の封止部材と、
前記第1の封止部材の主面と共に封止空間を形成するように、前記第1の封止部材の主面に接着された第2の封止部材と、
前記第1の封止部材と前記第2の封止部材とを、前記第1の封止部材の主面上の枠状の接着領域において接着している樹脂接着剤層と、
前記第1の封止部材の主面上において、前記枠状の接着領域の外周線と前記第1の封止部材の主面の周縁部との間に設けられた枠状のガラス層と、
前記封止空間内に配置された電子部品本体とを備える電子部品。 - 枠状の前記ガラス層が、前記枠状の接着領域の外周線に接するように設けられている、請求項1に記載の電子部品。
- 枠状の前記ガラス層の厚みが前記樹脂接着剤層の厚みより大きい、請求項1または2に記載の電子部品。
- 前記第1の封止部材がアルミナ基板である、請求項1~3のいずれか1項に記載の電子部品。
- 請求項1~4のいずれか1項に記載の電子部品の製造方法において、
後工程により複数の前記第1の封止部材となるように切断される原封止部材を用意する工程と、
前記原封止部材の主面の一部にガラス層を枠状に形成する工程と、
切断部分が枠状の前記ガラス層を形成した部分を含むように前記原封止部材を切断し、複数の前記第1の封止部材を得る工程と、
前記切断の前または後に、前記第1の封止部材の主面上において枠状の前記ガラス層により形成される枠内に、前記第2の封止部材を、前記樹脂接着剤により接着する工程とを備える、電子部品の製造方法。
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WO2014174945A1 (ja) * | 2013-04-22 | 2014-10-30 | 株式会社村田製作所 | 水晶振動装置 |
WO2016190090A1 (ja) * | 2015-05-27 | 2016-12-01 | 株式会社村田製作所 | 圧電振動素子搭載用基板並びに圧電振動子及びその製造方法 |
WO2022269970A1 (ja) * | 2021-06-23 | 2022-12-29 | 株式会社村田製作所 | 圧電振動子及び圧電振動子の製造方法 |
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