JP5704231B2 - 電子部品及び電子部品の製造方法 - Google Patents
電子部品及び電子部品の製造方法 Download PDFInfo
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- JP5704231B2 JP5704231B2 JP2013509812A JP2013509812A JP5704231B2 JP 5704231 B2 JP5704231 B2 JP 5704231B2 JP 2013509812 A JP2013509812 A JP 2013509812A JP 2013509812 A JP2013509812 A JP 2013509812A JP 5704231 B2 JP5704231 B2 JP 5704231B2
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- 238000000034 method Methods 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000007789 sealing Methods 0.000 claims description 132
- 229920005989 resin Polymers 0.000 claims description 70
- 239000011347 resin Substances 0.000 claims description 70
- 239000011521 glass Substances 0.000 claims description 67
- 239000010410 layer Substances 0.000 claims description 53
- 239000000853 adhesive Substances 0.000 claims description 50
- 230000001070 adhesive effect Effects 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 46
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 31
- 239000012790 adhesive layer Substances 0.000 claims description 25
- 230000002093 peripheral effect Effects 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 description 20
- 239000002184 metal Substances 0.000 description 20
- 239000012298 atmosphere Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000002073 fluorescence micrograph Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000003949 imides Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/40—Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
- H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
封止部材15を板状としてもよい。また、第1及び第2の封止部材10,15の両方を開口縁同士で接合される形状としてもよい。
(実施例)
図1及び図2に示す電子部品1と実質的に同様の構成を有する圧電振動装置を、以下の要領で作製した。
マザー基板にガラスを塗布しなかったこと以外は、実施例と同様にして、圧電振動装置を作製した。
マザー基板の全面にガラスを塗布し、アルミナ基板と金属キャップとをガラス層を介して接着したこと以外は、実施例と同様にして、圧電振動装置を作製した。
実施例及び比較例1により作製した圧電振動装置について、樹脂接着剤の広がりを確認した。図7は、実施例において作成した圧電振動装置の一部分を示す蛍光顕微鏡写真である。図8は、比較例1において作成した圧電振動装置の一部分を示す蛍光顕微鏡写真である。図7及び図8に示される蛍光顕微鏡写真において、右下の暗い部分は金属キャップである。金属キャップの周囲に見られる明るい部分は、アルミナ基板と金属キャップの接着面から広がった樹脂接着剤である。
実施例及び比較例2により作製した圧電振動装置の金属キャップに、上記金属キャップに対して水平な力を、ボールシェアテスター(RHESCA社製、ボンディングテスタ、「PTR−1000」)によって徐々に加えた。上記金属キャップがアルミナ基板から剥がれたときの力を測定することによって、アルミナ基板と金属キャップとの固着強度を測定した。
10…第1の封止部材
10a…配線電極
10b…端子電極
11…ガラス層
12…導電性接着剤層
13…樹脂接着剤層
14…絶縁層
15…第2の封止部材
15a…封止空間
20…電子部品本体
21,23…電極
22…圧電基板
30…原封止部材
Claims (4)
- 主面を有する第1の封止部材と、
前記第1の封止部材の主面と共に封止空間を形成するように、前記第1の封止部材の主面に接着された第2の封止部材と、
前記第1の封止部材と前記第2の封止部材とを、前記第1の封止部材の主面上の枠状の接着領域において接着している樹脂接着剤層と、
前記第1の封止部材の主面上において、前記枠状の接着領域の外周線と前記第1の封止部材の主面の周縁部との間に設けられた枠状のガラス層と、
前記封止空間内に配置された電子部品本体とを備える電子部品の製造方法において、
後工程により複数の前記第1の封止部材となるように切断される原封止部材を用意する工程と、
前記原封止部材の主面の一部にガラス層を枠状に形成する工程と、
切断部分が枠状の前記ガラス層を形成した部分を含むように前記原封止部材を切断し、複数の前記第1の封止部材を得る工程と、
前記切断の前または後に、前記第1の封止部材の主面上において枠状の前記ガラス層により形成される枠内に、前記第2の封止部材を、前記樹脂接着剤により接着する工程とを備える、電子部品の製造方法。 - 枠状の前記ガラス層が、前記枠状の接着領域の外周線に接するように設けられている、請求項1に記載の電子部品の製造方法。
- 枠状の前記ガラス層の厚みが前記樹脂接着剤層の厚みより大きい、請求項1または2に記載の電子部品の製造方法。
- 前記第1の封止部材がアルミナ基板である、請求項1〜3のいずれか1項に記載の電子部品の製造方法。
Priority Applications (1)
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JP2013509812A JP5704231B2 (ja) | 2011-04-11 | 2012-02-01 | 電子部品及び電子部品の製造方法 |
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JP2011087379 | 2011-04-11 | ||
JP2011087379 | 2011-04-11 | ||
PCT/JP2012/052228 WO2012140936A1 (ja) | 2011-04-11 | 2012-02-01 | 電子部品及び電子部品の製造方法 |
JP2013509812A JP5704231B2 (ja) | 2011-04-11 | 2012-02-01 | 電子部品及び電子部品の製造方法 |
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Publication Number | Publication Date |
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JPWO2012140936A1 JPWO2012140936A1 (ja) | 2014-07-28 |
JP5704231B2 true JP5704231B2 (ja) | 2015-04-22 |
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US (1) | US9735340B2 (ja) |
JP (1) | JP5704231B2 (ja) |
CN (1) | CN103460376B (ja) |
WO (1) | WO2012140936A1 (ja) |
Families Citing this family (7)
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JP6010423B2 (ja) * | 2012-10-24 | 2016-10-19 | 京セラ株式会社 | 電子部品収納用パッケージおよび電子装置 |
TWI523286B (zh) | 2013-04-22 | 2016-02-21 | Murata Manufacturing Co | Crystal Oscillator |
US10452869B2 (en) * | 2014-05-07 | 2019-10-22 | Infineon Technologies Ag | Systems and methods for processing and verifying data using signatures |
JP6191787B2 (ja) * | 2015-01-08 | 2017-09-06 | 株式会社村田製作所 | 圧電振動部品の製造方法 |
CN107615652B (zh) * | 2015-05-27 | 2020-06-23 | 株式会社村田制作所 | 压电振动元件搭载用基板以及压电振子及其制造方法 |
JP6838547B2 (ja) * | 2017-12-07 | 2021-03-03 | 株式会社村田製作所 | コイル部品およびその製造方法 |
WO2022269970A1 (ja) * | 2021-06-23 | 2022-12-29 | 株式会社村田製作所 | 圧電振動子及び圧電振動子の製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0089044A2 (en) * | 1982-03-16 | 1983-09-21 | Nec Corporation | A semiconductor device having a container sealed with a solder of low melting point |
WO1991013464A1 (en) * | 1990-02-26 | 1991-09-05 | Cray Research, Inc. | Reduced capacitance chip carrier |
JPH06268091A (ja) * | 1993-03-17 | 1994-09-22 | Fujitsu Ltd | 半導体装置 |
JPH09246867A (ja) * | 1996-03-11 | 1997-09-19 | Fujisawa Electron Kk | 表面実装形小型水晶発振器 |
JP2003282766A (ja) * | 2002-03-27 | 2003-10-03 | Kyocera Corp | 電子部品収納用容器 |
JP2008112886A (ja) * | 2006-10-31 | 2008-05-15 | Epson Toyocom Corp | 電子部品収納用パッケージおよびこれを用いた電子デバイス |
US7915527B1 (en) * | 2006-08-23 | 2011-03-29 | Rockwell Collins, Inc. | Hermetic seal and hermetic connector reinforcement and repair with low temperature glass coatings |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10154764A (ja) * | 1996-11-25 | 1998-06-09 | Sony Corp | 固体撮像装置用パッケージのシール方法 |
JP2003163342A (ja) * | 2001-11-29 | 2003-06-06 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
US6890445B2 (en) * | 2001-12-13 | 2005-05-10 | Agere Systems, Inc. | Process for packaging electronic devices using thin bonding regions |
US7294919B2 (en) * | 2003-11-26 | 2007-11-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Device having a complaint element pressed between substrates |
JP4827593B2 (ja) * | 2005-07-19 | 2011-11-30 | パナソニック株式会社 | 半導体装置およびその製造方法 |
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2012
- 2012-02-01 JP JP2013509812A patent/JP5704231B2/ja active Active
- 2012-02-01 WO PCT/JP2012/052228 patent/WO2012140936A1/ja active Application Filing
- 2012-02-01 CN CN201280016428.4A patent/CN103460376B/zh active Active
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2013
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0089044A2 (en) * | 1982-03-16 | 1983-09-21 | Nec Corporation | A semiconductor device having a container sealed with a solder of low melting point |
WO1991013464A1 (en) * | 1990-02-26 | 1991-09-05 | Cray Research, Inc. | Reduced capacitance chip carrier |
JPH06268091A (ja) * | 1993-03-17 | 1994-09-22 | Fujitsu Ltd | 半導体装置 |
JPH09246867A (ja) * | 1996-03-11 | 1997-09-19 | Fujisawa Electron Kk | 表面実装形小型水晶発振器 |
JP2003282766A (ja) * | 2002-03-27 | 2003-10-03 | Kyocera Corp | 電子部品収納用容器 |
US7915527B1 (en) * | 2006-08-23 | 2011-03-29 | Rockwell Collins, Inc. | Hermetic seal and hermetic connector reinforcement and repair with low temperature glass coatings |
JP2008112886A (ja) * | 2006-10-31 | 2008-05-15 | Epson Toyocom Corp | 電子部品収納用パッケージおよびこれを用いた電子デバイス |
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JPWO2012140936A1 (ja) | 2014-07-28 |
CN103460376A (zh) | 2013-12-18 |
CN103460376B (zh) | 2016-02-17 |
US20140028155A1 (en) | 2014-01-30 |
US9735340B2 (en) | 2017-08-15 |
WO2012140936A1 (ja) | 2012-10-18 |
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