JP6191787B2 - 圧電振動部品の製造方法 - Google Patents
圧電振動部品の製造方法 Download PDFInfo
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- JP6191787B2 JP6191787B2 JP2016568275A JP2016568275A JP6191787B2 JP 6191787 B2 JP6191787 B2 JP 6191787B2 JP 2016568275 A JP2016568275 A JP 2016568275A JP 2016568275 A JP2016568275 A JP 2016568275A JP 6191787 B2 JP6191787 B2 JP 6191787B2
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- insulating adhesive
- adhesive layer
- insulating
- vibration component
- main surface
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims 2
- 239000012790 adhesive layer Substances 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005304 joining Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 20
- 239000003822 epoxy resin Substances 0.000 description 13
- 229920000647 polyepoxide Polymers 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000005284 excitation Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000003566 sealing material Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0519—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for cantilever
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/022—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
図1は、本発明の実施形態に係る圧電振動部品40の分解斜視図である。同図に示すように、圧電振動部品40は、主に、圧電振動子20と、圧電振動子20が実装される主面11を有する基板10と、圧電振動子20を外気から密閉するためのリッド30とを備えている。圧電振動子20は、厚み方向に対向する二つの面を有する平板状の圧電板21と、圧電板21の一方の面に形成された励振電極22と、圧電板21の他方の面に形成された励振電極23とを備えている。励振電極22,23に交流電圧を印加すると、圧電板21は、厚みすべりモードで振動する。圧電板21は、圧電特性を示す圧電材質(例えば、水晶板や圧電セラミックスなど)からなる。励振電極22,23は、例えば、金、クロム、ニッケル、アルミニウム、チタン等の導電性薄膜からなる。
11…主面
12…導電性接着剤
13…配線
14…切欠き部
15…導電性接着剤
16…配線
17…切欠き部
20…圧電振動子
21…圧電板
22…励振電極
23…励振電極
30…リッド
31…凹部
32…縁部
40…圧電振動部品
50…絶縁膜
61…第1の絶縁接着層
62…第2の絶縁接着層
Claims (3)
- 圧電振動子が実装される主面を有する基板を準備する工程と、
前記主面に対向するように開口された凹部及び前記凹部の周縁に設けられた縁部を有するリッドを準備する工程と、
前記主面に絶縁膜を形成する工程と、
前記縁部に第1の絶縁接着層を形成する工程と、
前記第1の絶縁接着層に重ねて第2の絶縁接着層を形成する工程と、
前記圧電振動子を前記凹部と前記主面との間の空間に密閉封止するように前記第1及び第2の絶縁接着層を接合する工程と、
を備える圧電振動部品の製造方法。 - 請求項1に記載の圧電振動部品の製造方法であって、
前記第1の絶縁接着層を形成する工程は、前記第1の絶縁接着層を仮硬化させる工程を含む、圧電振動部品の製造方法。 - 請求項1又は2に記載の圧電振動部品の製造方法であって、
前記第1及び第2の絶縁接着層を接合する工程は、前記第1及び第2の絶縁接着層を硬化させる工程を含む、圧電振動部品の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015002484 | 2015-01-08 | ||
JP2015002484 | 2015-01-08 | ||
PCT/JP2015/075417 WO2016111047A1 (ja) | 2015-01-08 | 2015-09-08 | 圧電振動部品及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016111047A1 JPWO2016111047A1 (ja) | 2017-08-10 |
JP6191787B2 true JP6191787B2 (ja) | 2017-09-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016568275A Active JP6191787B2 (ja) | 2015-01-08 | 2015-09-08 | 圧電振動部品の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10749492B2 (ja) |
JP (1) | JP6191787B2 (ja) |
WO (1) | WO2016111047A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6163151B2 (ja) * | 2014-12-25 | 2017-07-12 | 京セラ株式会社 | 電子機器 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6020146U (ja) * | 1983-07-20 | 1985-02-12 | 日本電気株式会社 | 混成集積回路装置 |
JPH09307396A (ja) * | 1996-05-09 | 1997-11-28 | Murata Mfg Co Ltd | 電子部品の封止構造および封止方法 |
JP3841278B2 (ja) * | 2002-01-21 | 2006-11-01 | Tdk株式会社 | 圧電部品 |
JP3960156B2 (ja) * | 2002-07-19 | 2007-08-15 | 千住金属工業株式会社 | 板状基板封止用リッドの製造方法 |
JP4998620B2 (ja) * | 2009-09-14 | 2012-08-15 | 株式会社村田製作所 | 圧電振動装置の製造方法 |
JP5447316B2 (ja) * | 2010-09-21 | 2014-03-19 | 株式会社大真空 | 電子部品パッケージ用封止部材、及び電子部品パッケージ |
JP5704231B2 (ja) * | 2011-04-11 | 2015-04-22 | 株式会社村田製作所 | 電子部品及び電子部品の製造方法 |
JP2013055400A (ja) * | 2011-09-01 | 2013-03-21 | Seiko Instruments Inc | 圧電振動デバイス及び発振器 |
JP5844100B2 (ja) | 2011-09-14 | 2016-01-13 | 日本電波工業株式会社 | 表面実装水晶振動子及びその製造方法 |
WO2013047807A1 (ja) * | 2011-09-30 | 2013-04-04 | 株式会社大真空 | 電子部品パッケージ、電子部品パッケージ用封止部材、および前記電子部品パッケージ用封止部材の製造方法 |
JP2013145964A (ja) * | 2012-01-13 | 2013-07-25 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及び圧電デバイスの製造方法 |
JP2013168863A (ja) * | 2012-02-16 | 2013-08-29 | Murata Mfg Co Ltd | 電子部品 |
JP5790878B2 (ja) * | 2012-05-18 | 2015-10-07 | 株式会社村田製作所 | 水晶振動子 |
WO2013172442A1 (ja) * | 2012-05-18 | 2013-11-21 | 株式会社村田製作所 | 水晶振動子 |
JP2014197615A (ja) * | 2013-03-29 | 2014-10-16 | 日本電波工業株式会社 | 電子デバイス及びその製造方法 |
TWI523286B (zh) * | 2013-04-22 | 2016-02-21 | Murata Manufacturing Co | Crystal Oscillator |
JP2015019142A (ja) * | 2013-07-09 | 2015-01-29 | 日本電波工業株式会社 | 圧電デバイス及び圧電デバイスの製造方法 |
-
2015
- 2015-09-08 JP JP2016568275A patent/JP6191787B2/ja active Active
- 2015-09-08 WO PCT/JP2015/075417 patent/WO2016111047A1/ja active Application Filing
-
2017
- 2017-06-23 US US15/631,451 patent/US10749492B2/en active Active
Also Published As
Publication number | Publication date |
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US10749492B2 (en) | 2020-08-18 |
WO2016111047A1 (ja) | 2016-07-14 |
US20170288522A1 (en) | 2017-10-05 |
JPWO2016111047A1 (ja) | 2017-08-10 |
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