JP6481697B2 - 圧電振動部品及びその製造方法 - Google Patents
圧電振動部品及びその製造方法 Download PDFInfo
- Publication number
- JP6481697B2 JP6481697B2 JP2016569219A JP2016569219A JP6481697B2 JP 6481697 B2 JP6481697 B2 JP 6481697B2 JP 2016569219 A JP2016569219 A JP 2016569219A JP 2016569219 A JP2016569219 A JP 2016569219A JP 6481697 B2 JP6481697 B2 JP 6481697B2
- Authority
- JP
- Japan
- Prior art keywords
- flange portion
- main surface
- substrate
- vibration component
- adhesive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000012790 adhesive layer Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 39
- 230000003746 surface roughness Effects 0.000 claims description 23
- 230000001070 adhesive effect Effects 0.000 claims description 22
- 239000000853 adhesive Substances 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 description 12
- 229920000647 polyepoxide Polymers 0.000 description 12
- 230000005284 excitation Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004873 anchoring Methods 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920006332 epoxy adhesive Polymers 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000003681 vanadium Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Acoustics & Sound (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
図1は、本発明の実施形態1に係る圧電振動部品40の分解斜視図である。同図に示すように、圧電振動部品40は、主に、圧電振動子20と、圧電振動子20が実装される主面11を有する基板10と、圧電振動子20を外気から密閉するためのリッド30とを備えている。圧電振動子20は、厚み方向に対向する二つの面を有する平板状の圧電板21と、圧電板21の一方の面に形成された励振電極22と、圧電板21の他方の面に形成された励振電極23とを備えている。励振電極22,23に交流電圧を印加すると、圧電板21は、厚みすべりモードで振動する。圧電板21は、圧電特性を示す圧電材質(例えば、水晶板や圧電セラミックスなど)からなる。励振電極22,23は、例えば、金、クロム、ニッケル、アルミニウム、チタン等の導電性薄膜からなる。
図5乃至図7に示す符号のうち図1乃至図4に示す符号と同一の符号は、同一の部材を示すものとし、その詳細な説明を省略する。図5に示すように、実施形態2に係るフランジ部32の側面33は、少なくとも一つの凸部36を有している点において、実施形態1に係るフランジ部32とは異なる。フランジ部32の側面33は、フランジ部32の全周にわたって形成された複数の凸部36を有してもよい。凸部36を形成する方法として、例えば、プレス機を用いた打ち抜き加工や金属の腐食作用を利用したエッチング処理などを用いることができる。例えば、一枚の母基板から複数の基板片をプレスで打ち抜いて複数のリッド30を製造する過程において、フランジ部32の側面33に作用するせん断応力により、一つ又は複数の凸部36を側面33に形成することができる。このような構造を有するリッド30を準備したならば、図6に示すように、フランジ部32の周縁が主面11に接合されるべき位置に合わせて圧電振動子20を囲繞するように略枠状に接着層50を主面11に形成する。
11…主面
12…導電性接着剤
13…配線
14…切欠き部
15…導電性接着剤
16…配線
17…切欠き部
18…側面
20…圧電振動子
21…圧電板
22…励振電極
23…励振電極
30…リッド
31…凹部
32…フランジ部
40…圧電振動部品
50…接着層
Claims (5)
- 圧電振動子を実装する主面を有する基板と、
前記主面に対向するように開口された凹部及び前記凹部の開口縁から外側に向かって突出するフランジ部を有するリッドと、
前記圧電振動子を前記凹部と前記主面との間の空間に密閉封止するように前記基板と前記リッドとを接合する接着層とを備え、
前記フランジ部の側面は、少なくとも一つの凸部を有しており、
前記フランジ部は、前記接着層を介して前記主面に接合する接合面を有しており、
前記少なくとも一つの凸部は、前記フランジ部の接合面から前記フランジ部の上面にかけて次第に肉薄となる断面形状を有し、
前記接着層は、前記基板の主面から前記フランジ部の側面にかけて前記少なくとも一つの凸部の先端部分を被覆するように形成されている、圧電振動部品。 - 請求項1に記載の圧電振動部品であって、
前記フランジ部の側面は、前記フランジ部の全周にわたって形成された複数の凸部を有しており、
前記接着層は、前記基板の主面から前記フランジ部の側面にかけて前記複数の凸部の何れか一つ以上の凸部の先端部分を被覆するように形成されている、圧電振動部品。 - 請求項1又は2に記載の圧電振動部品であって、
前記接合面の表面粗さは、前記凹部の表面粗さより粗い、圧電振動部品。 - 請求項1乃至請求項3のうち何れか1項に記載の圧電振動部品であって、
前記接着層は、低融点ガラス接着剤である、圧電振動部品。 - 圧電振動子を実装する主面を有する基板を準備する工程と、
前記主面に対向するように開口された凹部、及び前記凹部の開口縁から外側に向かって突出するフランジ部であって、前記フランジ部の側面は、少なくとも一つの凸部を有する、フランジ部を有するリッドを準備する工程と、
前記フランジ部の接合面が前記主面に接合すべき位置に合わせて前記主面に接着層を形成する工程と、
前記リッド及び前記基板を相対的に押圧することにより、前記接着層が前記基板の主面から前記フランジ部の側面にかけて前記少なくとも一つの凸部の先端部分を被覆するように促して、前記圧電振動子を前記凹部と前記主面との間の空間に密閉封止する工程と、
を備え、
前記少なくとも一つの凸部は、前記フランジ部の接合面から前記フランジ部の上面にかけて次第に肉薄となる断面形状を有する、圧電振動部品の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015007111 | 2015-01-16 | ||
JP2015007111 | 2015-01-16 | ||
PCT/JP2015/076435 WO2016113947A1 (ja) | 2015-01-16 | 2015-09-17 | 圧電振動部品及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016113947A1 JPWO2016113947A1 (ja) | 2017-10-19 |
JP6481697B2 true JP6481697B2 (ja) | 2019-03-13 |
Family
ID=56405505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016569219A Active JP6481697B2 (ja) | 2015-01-16 | 2015-09-17 | 圧電振動部品及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10727803B2 (ja) |
JP (1) | JP6481697B2 (ja) |
WO (1) | WO2016113947A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6163151B2 (ja) * | 2014-12-25 | 2017-07-12 | 京セラ株式会社 | 電子機器 |
JP6974787B2 (ja) * | 2016-12-12 | 2021-12-01 | 株式会社村田製作所 | 圧電振動子、モジュール部品及びそれらの製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004205776A (ja) * | 2002-12-25 | 2004-07-22 | Konica Minolta Holdings Inc | 光学ユニット |
JP2012074937A (ja) * | 2010-09-29 | 2012-04-12 | Seiko Epson Corp | 圧電デバイス、及び圧電デバイスの製造方法 |
JP6007535B2 (ja) * | 2012-03-22 | 2016-10-12 | 日本電気株式会社 | 中空封止構造及びそれを備えた中空パッケージ |
JP2014197615A (ja) * | 2013-03-29 | 2014-10-16 | 日本電波工業株式会社 | 電子デバイス及びその製造方法 |
WO2018119321A1 (en) * | 2016-12-22 | 2018-06-28 | Counsyl, Inc. | Automatic diagnostic laboratory and laboratory information management system for high throughput |
-
2015
- 2015-09-17 WO PCT/JP2015/076435 patent/WO2016113947A1/ja active Application Filing
- 2015-09-17 JP JP2016569219A patent/JP6481697B2/ja active Active
-
2017
- 2017-06-15 US US15/623,553 patent/US10727803B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170302242A1 (en) | 2017-10-19 |
JPWO2016113947A1 (ja) | 2017-10-19 |
WO2016113947A1 (ja) | 2016-07-21 |
US10727803B2 (en) | 2020-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5884946B2 (ja) | 水晶振動装置 | |
JP5554092B2 (ja) | 電子デバイスパッケージの製造方法 | |
JP6481697B2 (ja) | 圧電振動部品及びその製造方法 | |
JP6133609B2 (ja) | 圧電部品 | |
JP6607408B2 (ja) | 圧電振動部品及びその製造方法 | |
JP6179681B2 (ja) | 圧電振動部品の製造方法 | |
JP5148659B2 (ja) | 圧電デバイス | |
US10938368B2 (en) | Piezoelectric-resonator-mounting substrate, and piezoelectric resonator unit and method of manufacturing the piezoelectric resonator unit | |
JP2008072456A (ja) | チップ型圧電振動子、チップ型sawデバイス、及び製造方法 | |
JP2013051560A (ja) | 圧電デバイス | |
WO2016111038A1 (ja) | 圧電振動部品及びその製造方法 | |
JP6191787B2 (ja) | 圧電振動部品の製造方法 | |
JP2008108782A (ja) | 電子装置およびその製造方法 | |
JP5225824B2 (ja) | 電子部品パッケージ及び電子部品パッケージの製造方法 | |
JP6169369B2 (ja) | 電子デバイスのガラス封止方法 | |
JP2001250843A (ja) | 半導体素子及び半導体素子製造方法 | |
JP4693387B2 (ja) | 圧電部品 | |
JP6567831B2 (ja) | 水晶デバイス | |
JP2012119918A (ja) | 電子部品 | |
WO2013161554A1 (ja) | 水晶振動装置及びその製造方法 | |
WO2016132767A1 (ja) | 圧電振動デバイス及びその製造方法 | |
JP2005295299A (ja) | 圧電部品の製造方法 | |
JPH03241908A (ja) | 圧電共振部品の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170609 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180809 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190128 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6481697 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |