WO2022254690A1 - めっき装置 - Google Patents
めっき装置 Download PDFInfo
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- WO2022254690A1 WO2022254690A1 PCT/JP2021/021358 JP2021021358W WO2022254690A1 WO 2022254690 A1 WO2022254690 A1 WO 2022254690A1 JP 2021021358 W JP2021021358 W JP 2021021358W WO 2022254690 A1 WO2022254690 A1 WO 2022254690A1
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- 238000007747 plating Methods 0.000 title claims abstract description 285
- 239000000758 substrate Substances 0.000 claims abstract description 236
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
- C25D17/08—Supporting racks, i.e. not for suspending
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/12—Process control or regulation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Definitions
- This application relates to plating equipment.
- a cup-type electroplating apparatus is known as an example of a plating apparatus (see Patent Document 1, for example).
- a cup-type electroplating apparatus immerses a substrate (for example, a semiconductor wafer) held in a substrate holder with the surface to be plated facing downward in a plating solution, and applies a voltage between the substrate and the anode to A conductive film is deposited on the surface of the substrate.
- a user presets parameters such as a plating current value and a plating time as a plating recipe based on a target plating film thickness and an actual plating area of a substrate to be plated.
- Plating processing is performed based on the processing recipe (see Patent Document 2, for example).
- a plurality of wafers on the same carrier are plated with the same processing recipe.
- the carrier containing the wafers is transported from the plating equipment to a separate film thickness measurement equipment, where the wafers are individually measured. , the film thickness and wafer in-plane profile are measured.
- plating may vary from substrate to substrate due to dimensional tolerances of the substrate or changes in the state of the plating solution in the plating tank.
- the thickness of the film may vary. Further, even if the average film thickness is adjusted for each of a plurality of substrates, the plated film thickness may vary depending on the location within the same substrate.
- one object of the present application is to propose a plating apparatus capable of improving the uniformity of the plating film formed on the substrate.
- a plating apparatus includes a plating tank, a substrate holder for holding a substrate, and a substrate held by the substrate holder. It has an arranged anode and a sensor for detecting parameters related to the plating film formed on the surface to be plated of the substrate, and measures the film thickness of the plating film based on the detection value of the sensor during the plating process. and a film thickness measurement module.
- FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the first embodiment.
- FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the first embodiment.
- FIG. 3 is a vertical cross-sectional view schematically showing the configuration of the plating module of the first embodiment.
- FIG. 4 is a diagram showing an example of a white confocal sensor and substrate cross section in this embodiment.
- FIG. 5 is a diagram showing an example of signal detection values by a white confocal sensor.
- FIG. 6 is a diagram showing an example of signal detection values by a white confocal sensor.
- FIG. 7 is a schematic diagram of the shield and substrate of the first embodiment viewed from below.
- FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the first embodiment.
- FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the first embodiment.
- FIG. 3 is a vertical cross-sectional view schematically showing the configuration of the plating module of the
- FIG. 8 is a diagram showing an example of adjustment of plating conditions by the control module in the first embodiment.
- FIG. 9 is a vertical cross-sectional view schematically showing the configuration of a plating module according to a modification of the first embodiment.
- FIG. 10 is a longitudinal sectional view schematically showing the configuration of the plating module of the second embodiment.
- FIG. 11 is a schematic diagram showing the substrate and the sensor in the plating tank in this embodiment from a direction perpendicular to the plate surface of the substrate Wf.
- FIG. 12 is a schematic diagram showing substrates and sensors in a plating tank in a modification.
- FIG. 13 is a schematic diagram showing substrates and sensors in a plating tank in a modification.
- FIG. 1 is a perspective view showing the overall configuration of the plating apparatus of the first embodiment.
- FIG. 2 is a plan view showing the overall configuration of the plating apparatus of the first embodiment.
- the plating apparatus of this embodiment is used for plating a substrate. Substrates include rectangular substrates and circular substrates.
- the plating apparatus 1000 includes a load/unload module 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer module. 600 , a transport device 700 and a control module 800 .
- the load/unload module 100 is a module for loading a substrate such as a semiconductor wafer into the plating apparatus 1000 or unloading the substrate from the plating apparatus 1000, and is equipped with a cassette for housing the substrate. Although four load/unload modules 100 are arranged horizontally in this embodiment, the number and arrangement of the load/unload modules 100 are arbitrary.
- the transfer robot 110 is a robot for transferring substrates, and is configured to transfer substrates between the load/unload module 100 , the aligner 120 and the transfer device 700 . When transferring substrates between the transfer robot 110 and the transfer device 700, the transfer robot 110 and the transfer device 700 can transfer the substrates via a temporary placement table (not shown).
- the aligner 120 is a module for aligning the orientation flats and notches of the substrate in a predetermined direction. Although two aligners 120 are arranged horizontally in this embodiment, the number and arrangement of the aligners 120 are arbitrary.
- the pre-wet module 200 is a module for attaching a treatment liquid (pre-wet liquid) such as pure water or degassed water to the surface to be plated of the substrate before plating. Although two pre-wet modules 200 are arranged vertically in this embodiment, the number and arrangement of the pre-wet modules 200 are arbitrary.
- the presoak module 300 is a module for etching the oxide film on the surface to be plated of the substrate before plating. In this embodiment, two presoak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the presoak modules 300 are arbitrary.
- the plating module 400 is a module for plating the substrate. In this embodiment, there are two sets of 12 plating modules 400 arranged vertically and four horizontally, and a total of 24 plating modules 400 are provided. The number and arrangement of are arbitrary.
- the cleaning module 500 is a module for cleaning the substrate after plating. In this embodiment, two cleaning modules 500 are arranged side by side in the vertical direction, but the number and arrangement of the cleaning modules 500 are arbitrary.
- the spin rinse dryer module 600 is a module for drying the substrate after cleaning by rotating it at high speed. Although two spin rinse dryer modules are arranged vertically in this embodiment, the number and arrangement of the spin rinse dryer modules are arbitrary.
- the transport device 700 is a device for transporting substrates between multiple modules in the plating apparatus 1000 .
- the control module 800 is a module for controlling a plurality of modules of the plating apparatus 1000, and can be composed of, for example, a general computer having an input/output interface with an operator or a dedicated computer.
- a substrate is loaded into the load/unload module 100 .
- the transfer robot 110 takes out the substrate from the load/unload module 100 and transfers the substrate to the aligner 120 .
- the aligner 120 aligns the positions of orientation flats, notches, and the like in a predetermined direction.
- the transport robot 110 transfers the substrate aligned by the aligner 120 to the transport device 700 .
- the transport device 700 transports the substrate received from the transport robot 110 to the pre-wet module 200 .
- the pre-wet module 200 pre-wets the substrate.
- the transport device 700 transports the pre-wet processed substrate to the pre-soak module 300 .
- the presoak module 300 applies a presoak treatment to the substrate.
- the transport device 700 transports the presoaked substrate to the plating module 400 .
- the plating module 400 applies plating to the substrate.
- the transport device 700 transports the plated substrate to the cleaning module 500 .
- the cleaning module 500 performs a cleaning process on the substrate.
- the transport device 700 transports the cleaned substrate to the spin rinse dryer module 600 .
- the spin rinse dryer module 600 applies a drying process to the substrate.
- the transport device 700 delivers the dried substrate to the transport robot 110 .
- the transfer robot 110 transfers the substrate received from the transfer device 700 to the load/unload module 100 . Finally, the substrate is unloaded from load/unload module 100 .
- FIG. 3 is a longitudinal sectional view schematically showing the configuration of the plating module 400 of the first embodiment.
- plating module 400 includes plating bath 410 for containing a plating solution.
- the plating bath 410 includes a cylindrical inner bath 412 with an open top, and an outer bath (not shown) provided around the inner bath 412 so as to store the plating solution overflowing from the upper edge of the inner bath 412 .
- the plating module 400 includes a substrate holder 440 for holding the substrate Wf with the surface to be plated Wf-a facing downward.
- the substrate holder 440 also includes a power supply contact for supplying power to the substrate Wf from a power source (not shown).
- the plating module 400 includes an elevating mechanism 442 for elevating the substrate holder 440 .
- plating module 400 also includes a rotation mechanism 448 that rotates substrate holder 440 about a vertical axis.
- the lifting mechanism 442 and the rotating mechanism 448 can be realized by known mechanisms such as motors.
- the plating module 400 includes a membrane 420 that vertically separates the interior of the inner tank 412 .
- the interior of the inner tank 412 is partitioned into a cathode area 422 and an anode area 424 by a membrane 420 .
- Cathode region 422 and anode region 424 are each filled with a plating solution.
- the membrane 420 may not be provided.
- An anode 430 is provided on the bottom surface of the inner tank 412 in the anode region 424 .
- an anode mask 426 for adjusting electrolysis between the anode 430 and the substrate Wf is arranged in the anode region 424 .
- the anode mask 426 is a substantially plate-shaped member made of, for example, a dielectric material, and is provided on the front surface (upper side) of the anode 430 .
- Anode mask 426 has an opening through which current flows between anode 430 and substrate Wf.
- the anode mask 426 is configured to have variable aperture dimensions, and the aperture dimensions are adjusted by the control module 800 .
- the opening size means the diameter when the opening is circular, and means the length of one side or the longest opening width when the opening is polygonal. It should be noted that a known mechanism can be employed to change the aperture size of the anode mask 426 . Moreover, although an example in which the anode mask 426 is provided has been shown in this embodiment, the anode mask 426 may not be provided. Furthermore, the membrane 420 described above may be provided in the openings of the anode mask 426 .
- a resistor 450 facing the membrane 420 is arranged in the cathode region 422 .
- the resistor 450 is a member for uniformizing the plating process on the surface to be plated Wf-a of the substrate Wf.
- the resistor 450 is vertically movable within the plating tank 410 by the drive mechanism 452 , and the position of the resistor 450 is adjusted by the control module 800 .
- the resistor 450 may be fixed to the plating bath 410 so as not to move within the plating bath 410 .
- the module 400 may not have the resistor 450 .
- a sensor 460 is also provided in the cathode region 422 .
- Sensor 460 is supported by sensor support 468 .
- the sensor 460 may be supported by the sidewall of the inner tank 412 or the resistor 450 instead of the sensor support 468 .
- the sensor support 468 may be a paddle for stirring the plating solution.
- the paddle preferably moves in parallel with the surface of the substrate Wf to agitate the plating solution, but is not limited to such an example.
- a plurality of sensors 460 are provided along the radial direction of the substrate Wf.
- the present invention is not limited to this example, and the plating module 400 may be provided with at least one sensor 460 .
- a detection signal from the sensor 460 is input to the control module 800 .
- the sensor 460 and the control module 800 correspond to an example of a "film thickness measurement module" for measuring the film thickness of the plating film formed on the plating surface Wf-a of the substrate Wf.
- the sensor 460 detects parameters related to the plating film formed on the plated surface Wf-a of the substrate Wf.
- a displacement sensor that measures the displacement of the plated surface Wf-a of the substrate Wf can be employed.
- a sensor for estimating the forming speed of the plating film may be employed as the parameter related to the plating film.
- the sensor 460 may be, for example, an optical sensor such as a white confocal sensor, an electric potential sensor, a magnetic field sensor, or an eddy current sensor.
- FIG. 4 is a diagram showing an example of a white confocal sensor and substrate cross section in this embodiment
- FIGS. 5 and 6 are diagrams showing an example of signal detection values by the white confocal sensor.
- a resist pattern is formed in advance on the substrate Wf to be plated.
- the white light confocal sensor (sensor 460) includes a light source 462 that generates irradiation light having a plurality of wavelength components, a light receiving section 464 that receives reflected light from the substrate Wf, and the wavelength of the light received by the light receiving section 464. and a processing unit 466 that measures the distance to the substrate Wf based on the component.
- resist region When the irradiation light is applied to the resist-applied region (hereinafter also referred to as "resist region") Rp on the substrate Wf, part of the irradiation light is reflected by the resist surface. As a result, as the distance to the substrate Wf calculated by the processing unit 466, the signal intensity indicating the distance to the resist (A1 in FIG. 5) is greatly indicated. Another part of the irradiation light is transmitted through the resist and reflected by the surface of the substrate Wf behind the resist. As a result, as the distance to the substrate Wf calculated by the processing unit 466, the signal intensity indicating the distance (A2 in FIG. 5) to the surface of the substrate Wf behind the resist is greatly indicated. In addition, since plating is not formed in the resist region Rp, the detection result by the sensor 460 does not change in the resist region Rp even if the plating process progresses.
- the irradiation light When the irradiation light is applied to the resist opening region (region where resist is not applied) Op on the substrate Wf, the irradiation light is mainly reflected by the surface of the substrate Wf.
- the signal intensity indicating the distance (A3 in FIG. 6) to the surface of the substrate Wf in the resist opening region Op is greatly indicated.
- a plating film is formed as the plating process proceeds, and the distance to the substrate Wf detected by the sensor 460 (processing unit 466) changes.
- the control module 800 preferably stores an average of detection signals of the resist area Rp as an initial process.
- the control module 800 preferably stores the average of the detection signals of the resist region Rp during the initial one or several rotations of the substrate Wf by the rotation mechanism 448 of the substrate holder 440 .
- the control module 800 may not use the detection signal of the boundary area between the resist area Rp and the resist opening area Op by the sensor 460, or may use it as information for calibrating the detection position on the substrate Wf. You may However, since the light passing through the resist differs from the refractive index of the atmosphere, when estimating the plating film thickness th, it is necessary to convert the distance in the measurement signal into an actual distance based on the optical principle.
- the sensor 460 does not directly detect the surface to be plated Wf-a of the substrate Wf, but the formation speed of the plating formed on the surface to be plated Wf-a. can be estimated.
- the sensor 460 detects the potential or magnetic field at the location where the sensor 460 is arranged between the substrate Wf and the anode 430, and the control module 800 or the sensor 460 (film thickness measurement module) determines the plating target based on the detected value. Calculate the formation rate of the plating on the surface Wf-a. This is based on the correlation between the plating current and the potential or magnetic field in the plating process.
- the current plating film thickness can be estimated based on the temporal change in the plating formation rate calculated from the start of plating.
- a known method can be adopted for estimating the plating film thickness based on the potential or magnetic field detected by the sensor 460 .
- the film thickness measurement module estimates the distribution of the plating current within the substrate being plated based on the detection signal, and based on the estimated distribution of the plating current, the film thickness distribution of the plating film within the substrate. can be estimated.
- the electrodes installed in the plating tank are the substrate (cathode) for plating, the anode, two potential sensors (for measuring two potential differences), and at least five electrodes for grounding. .
- the sensor 460 detects interlinkage magnetic flux formed by eddy currents in the substrate Wf, and detects the plating film thickness of the substrate Wf based on the detected interlinkage magnetic flux. . It has been found from the studies of the present inventors that when an eddy current sensor is used as the sensor 460, the detection accuracy is lower than when other sensors are used. It is considered that this is due to the influence of the resist applied to the substrate Wf.
- the control module 800 or the sensor 460 may detect the end point of the plating process or predict the time until the end point of the plating process based on the value detected by the sensor 460. .
- the film thickness measurement module may terminate the plating process when the film thickness of the plating film reaches a desired thickness based on the value detected by the sensor 460 .
- the film thickness measurement module calculates the film thickness increase speed of the plating film based on the detected value by the sensor 460, and predicts the time until the desired thickness is reached, that is, the time until the end point of the plating process. You may
- the cathode region 422 is provided with a shield 470 for shielding current flow from the anode 430 to the substrate Wf.
- the shield 470 is a substantially plate-shaped member made of, for example, a dielectric material.
- FIG. 7 is a schematic diagram of the shield 470 and the substrate Wf of this embodiment viewed from below. 7, illustration of the substrate holder 440 that holds the substrate Wf is omitted.
- the shield 470 has a shielding position (the position indicated by the dashed line in FIGS.
- the shield 470 is configured to be movable between a shielding position below the surface to be plated Wf-a and a retracted position away from below the surface to be plated Wf-a.
- the position of shield 470 is controlled by control module 800 by a drive mechanism (not shown). Movement of the shield 470 can be achieved by known mechanisms such as motors or solenoids. In the examples shown in FIGS.
- the shield 470 shields part of the peripheral region of the plating surface Wf-a of the substrate Wf in the circumferential direction at the shielding position. Further, in the example shown in FIG. 7, the shield 470 is tapered toward the center of the substrate Wf. However, the shield 470 is not limited to such an example, and can be of any shape determined in advance by experiments or the like.
- the substrate Wf is exposed to the plating solution by immersing the substrate Wf in the plating solution in the cathode region 422 using the elevating mechanism 442 .
- the plating module 400 applies a voltage between the anode 430 and the substrate Wf in this state, thereby plating the surface Wf-a of the substrate Wf to be plated.
- the plating process is performed while the substrate holder 440 is rotated using the rotation mechanism 448 .
- a conductive film (plated film) is deposited on the surface to be plated Wf-a of the substrate Wf-a by the plating process.
- real-time detection is provided by sensor 460 during the plating process.
- the control module 800 measures the film thickness of the plating film based on the detected value by the sensor 460 .
- the plating module 400 includes a plurality of sensors 460 for measuring the film thickness of the plating film, and measures the film thickness of the plating film at a plurality of locations on the surface to be plated Wf-a. can do.
- the detection position by the sensor 460 can be changed, and multiple points in the circumferential direction of the substrate Wf, or the film at the entire circumferential direction. Thickness can also be measured.
- the plating module 400 may change the rotation speed of the substrate Wf by the rotation mechanism 448 during the plating process. As an example, the plating module 400 may slowly rotate the substrate Wf for estimating the plating film thickness by the film thickness estimation module. As an example, the plating module 400 rotates the substrate Wf at a first rotation speed Rs1 during the plating process. The substrate Wf may be rotated at a second rotation speed Rs2 slower than the first rotation speed Rs1. This makes it possible to accurately estimate the plating film thickness of the substrate Wf, especially when the sampling period of the sensor 460 is small with respect to the rotation speed of the substrate Wf.
- the second rotation speed Rs2 may be a speed that is 1/10 of the first rotation speed Rs1.
- the plating apparatus 1000 of this embodiment it is possible to measure changes in the thickness of the plating film during the plating process. With reference to the film thickness change of the plated film thus measured, at least one of the plating current value, the plating time, the position of the resistor 450, the opening size of the anode mask 426, and the position of the shield 470 for the subsequent plating processes.
- Plating conditions can be adjusted, including: The plating conditions may be adjusted by the user of the plating apparatus 1000 or by the control module 800 .
- control module 800 corresponds to an example of a "plating condition adjustment module.”
- the adjustment of the plating conditions by the control module 800 may be performed based on a conditional expression, a program, or the like determined in advance by experiment or the like.
- control module 800 may adjust the position of shield 470 .
- FIG. 8 shows an example of adjustment of the position of the shield 470 during plating as an example of adjustment of plating conditions by the control module 800 .
- the sensor 460 detects a predetermined detection point Sp (see FIG. 7) near the outer periphery of the substrate Wf as the substrate Wf rotates. (see one-dot chain line) is measured.
- the control module 800 moves the shield 470 to the retracted position (“OFF” in FIG. 8) in the region of ⁇ 1 to ⁇ 2 where the film thickness th is small, and moves the shield 470 to the shielding position in the other regions. (“ON” in FIG. 8), the position of the shield 470 should be adjusted as the substrate Wf rotates. In this way, the uniformity of the plating film formed on the substrate Wf can be improved by increasing the amount of plating formed in the region of ⁇ 1 to ⁇ 2.
- the control module 800 may also adjust the distance between the substrate Wf and the resistor 450 as real-time adjustment of the plating conditions.
- the distance between the substrate Wf and the resistor 450 has a relatively large effect on the amount of plating formed near the outer periphery of the substrate Wf, and the amount of plating formed on the central region of the substrate Wf. It has been found to have relatively little effect on volume. For this reason, as an example, the control module 800 shortens the distance between the substrate Wf and the resistor 450 when the thickness of the plated film near the outer circumference is larger than the target, and reduces the distance between the substrate Wf and the resistor 450 when the thickness of the plated film near the outer circumference is smaller than the target.
- the distance between Wf and the resistor 450 can be increased.
- the control module 800 increases the distance between the substrate Wf and the resistor 450 as the shield 470 is in the shielding position, and increases the distance between the substrate Wf and the resistor 450 as the shield 470 is in the shielding position. may be shortened. In this way, the uniformity of the plating film formed on the substrate Wf can be improved by adjusting the amount of plating formed in the vicinity of the outer periphery of the substrate Wf.
- the control module 800 can drive the lifting mechanism 442 to adjust the distance between the substrate Wf and the resistor 450 .
- the control module 800 may adjust the distance between the substrate Wf and the resistor 450 by moving the resistor 450 using the drive mechanism 452 .
- control module 800 may adjust the aperture size of the anode mask 426 as a real-time adjustment of the plating conditions. As an example, the control module 800 reduces the opening size of the anode mask 426 when the thickness of the plating film near the periphery is larger than the target, and reduces the opening size of the anode mask 426 when the thickness of the plating film near the periphery is smaller than the target. can be increased.
- FIG. 9 is a vertical cross-sectional view schematically showing the configuration of a plating module according to a modification of the first embodiment.
- a sensor support 468 for supporting the sensor 460 is configured to be movable by a drive mechanism 468a.
- the drive mechanism 468a may be configured to move the sensor 460 along the radial direction of the substrate Wf.
- a single sensor 460 is attached to the sensor support 468, but the present invention is not limited to this example, and multiple sensors 460 are supported by the sensor support 468 and driven by the drive mechanism 468a. It may be configured to be movable.
- FIG. 10 is a longitudinal sectional view schematically showing the configuration of a plating module 400A of the second embodiment.
- the substrate Wf is held so as to extend vertically, that is, so that the plate surface faces the horizontal direction.
- the plating module 400A includes a plating bath 410A holding a plating solution therein, an anode 430A arranged in the plating bath 410A, an anode 430A, and a substrate holder 440A.
- a rectangular substrate will be described as an example of the substrate Wf.
- the substrate Wf includes a rectangular substrate and a circular substrate.
- the anode 430A is arranged so as to face the board surface of the substrate Wf in the plating bath.
- Anode 430A is connected to the positive terminal of power supply 90, and substrate Wf is connected to the negative terminal of power supply 90 via substrate holder 440A.
- a voltage is applied between the anode 430A and the substrate Wf, current flows through the substrate Wf and a metal film is formed on the surface of the substrate Wf in the presence of the plating solution.
- the plating bath 410A includes an inner bath 412A in which the substrate Wf and the anode 430A are arranged, and an overflow bath 414A adjacent to the inner bath 412A.
- the plating solution in the inner tank 412A overflows the side wall of the inner tank 412A and flows into the overflow tank 414A.
- plating solution circulation line 58a One end of the plating solution circulation line 58a is connected to the bottom of the overflow tank 414A, and the other end of the plating solution circulation line 58a is connected to the bottom of the inner tank 412A.
- a circulation pump 58b, a constant temperature unit 58c, and a filter 58d are attached to the plating solution circulation line 58a.
- the plating solution overflows the side wall of the inner tank 412A, flows into the overflow tank 414A, and is returned from the overflow tank 414A to the plating solution storage tank 52 through the plating solution circulation line 58a.
- the plating solution circulates between the inner tank 412A and the overflow tank 414A through the plating solution circulation line 58a.
- the plating module 400A further includes a regulation plate 454 that adjusts the potential distribution on the substrate Wf, and a paddle 416 that stirs the plating solution in the inner tank 412A.
- Conditioning plate 454 is positioned between paddle 416 and anode 430A and has opening 452a for confining the electric field in the plating solution.
- the paddle 416 is arranged near the surface of the substrate Wf held by the substrate holder 440A inside the inner bath 412A.
- the paddle 416 is made of titanium (Ti) or resin, for example.
- the paddle 416 reciprocates in parallel with the surface of the substrate Wf to agitate the plating solution so that sufficient metal ions are uniformly supplied to the surface of the substrate Wf during plating of the substrate Wf.
- the plating module 400A also has a sensor 460A for measuring the plating film thickness of the substrate Wf.
- FIG. 11 is a schematic diagram showing the substrate Wf and the sensor 460A in the plating tank in this embodiment from a direction perpendicular to the plate surface of the substrate Wf.
- sensor 460A is attached to paddle 416.
- two paddles 416 are arranged near the surface to be plated of the substrate Wf, and two sensors 460A are attached to each of the two paddles 416.
- FIGS. 11 is a schematic diagram showing the substrate Wf and the sensor 460A in the plating tank in this embodiment from a direction perpendicular to the plate surface of the substrate Wf.
- sensor 460A is attached to paddle 416.
- two paddles 416 are arranged near the surface to be plated of the substrate Wf, and two sensors 460A are attached to each of the two paddles 416.
- the paddle 416 reciprocates in parallel with the surface of the substrate Wf, thereby stirring the plating solution and changing the detection position of the sensor 460A.
- the sensor 460A is not limited to such an example, and may be attached to the inner tank 412A or supported by a sensor support 468 (not shown) separate from the paddle 416 .
- a sensor similar to the sensor 460 of the first embodiment can be adopted.
- a detection signal from sensor 460A is input to control module 800A.
- the control module 800A measures the film thickness of the plating film based on the detected value by the sensor 460A. Accordingly, it is possible to measure in real time the change in the film thickness of the plating film formed on the surface to be plated of the substrate Wf in the plating process.
- the control module 800A can also adjust the plating conditions based on the film thickness of the plating film in the same manner as described in the first embodiment.
- FIG. 12 is a schematic diagram showing the substrate Wf and the sensor 460A in the plating tank in the modified example.
- four sensors 460A are provided near the four corners of the surface to be plated, and are configured to be movable inward from the four corners by a drive mechanism (not shown). Especially in the case of a square substrate, the film thickness distribution near the corners of the substrate Wf tends to have a large effect on the in-plane uniformity. can be done.
- four sensors 460A are provided in the example shown in FIG. 12, one to three or five or more sensors 460A may be provided. Sensors 460A may also be configured to move synchronously and symmetrically with each other.
- FIG. 13 is a schematic diagram showing the substrate Wf and the sensor 460A in the plating bath in another modified example.
- two sensors 460A are provided near the long sides of the surface to be plated, and are configured to be movable along the long sides by a drive mechanism (not shown). Especially in the case of a rectangular substrate, the film thickness distribution near the edge of the substrate Wf tends to have a large effect on the in-plane uniformity. can be done.
- two sensors 460A are provided in the example shown in FIG. 13, one or three or more sensors 460A may be provided. Sensors 460A may also be configured to move synchronously and symmetrically with each other.
- a plating apparatus includes a plating tank, a substrate holder for holding a substrate, and a plating apparatus so as to face the substrate held by the substrate holder.
- An anode arranged in a tank and a sensor for detecting parameters related to the plating film formed on the surface to be plated of the substrate, and the film of the plating film based on the detection value of the sensor during plating processing a film thickness measurement module for measuring the thickness.
- the film thickness of the plated film can be measured during the plating process. As a result, the uniformity of the plating film formed on the substrate can be improved.
- the apparatus further includes a plating condition adjustment module that adjusts plating conditions based on the film thickness of the plating film measured by the film thickness measurement module during the plating process.
- a plating condition adjustment module that adjusts plating conditions based on the film thickness of the plating film measured by the film thickness measurement module during the plating process.
- Mode 3 in Mode 2, the shielding position interposed between the surface to be plated of the substrate and the anode, and the shielding position between the surface to be plated of the substrate and the anode A shield movable to a retracted position is further provided, and the plating condition adjustment module adjusts the position of the shield as the adjustment of the plating conditions. According to Mode 3, the uniformity of the plating film formed on the substrate can be improved by using the shield.
- Mode 4 According to Mode 4, in Mode 2 or 3, a resistor disposed between the anode and the substrate, and a driving mechanism capable of changing the distance between the substrate and the resistor are further added.
- the plating condition adjustment module changes the distance between the substrate and the resistor as the adjustment of the plating conditions.
- the uniformity of the plating film formed on the substrate can be improved by adjusting the distance between the substrate and the resistor.
- Mode 5 According to Mode 5, in Modes 2 to 4, an anode mask provided above the anode and capable of changing opening dimensions is further provided, and the plating condition adjustment module adjusts the plating conditions by: changing the aperture size of the anode mask; According to the fifth aspect, the uniformity of the plating film formed on the substrate can be improved by adjusting the opening size of the anode mask.
- the senor is a white confocal or eddy current sensor. According to Mode 6, the sensor can detect the surface to be plated of the substrate.
- the senor is a magnetic field sensor or an electric potential sensor. According to form 7, the sensor can detect the magnetic field or electric potential in the plating bath.
- the film thickness measurement module is configured to estimate the plating current distribution in the substrate during plating based on the detection signal from the sensor. .
- the film thickness measurement module estimates the film thickness distribution of the plating film within the substrate based on the estimated plating current distribution within the substrate.
- Mode 10 According to Mode 10, in Modes 1 to 9, a rotation mechanism for rotating the substrate holder is further provided, and the film thickness measurement module rotates the substrate by the rotation mechanism to rotate the plated film. configured to measure the film thickness of the According to the tenth aspect, the substrate can be rotated to change the detection position of the substrate by the sensor, and the plated film formed on the substrate during the plating process can be more preferably detected.
- Mode 11 in Modes 1 to 10, a plurality of sensors are provided from the outer peripheral portion to the inner peripheral portion of the substrate. According to the eleventh aspect, it is possible to measure the film thickness of the plated film at a plurality of positions on the substrate.
- Mode 12 According to Mode 12, in Modes 1 to 10, a plurality of the sensors are provided along the outer edge of the substrate. According to the twelfth aspect, it is possible to measure the film thickness of the plated film at a plurality of positions on the substrate.
- the film thickness measurement module is configured to move the sensor along the plate surface of the substrate during the plating process. According to the thirteenth aspect, it is possible to measure the film thickness of the plated film at a plurality of positions on the substrate.
- Mode 14 According to Mode 14, in Modes 1 to 13, the substrate holder is configured to hold the substrate in the plating bath with the surface to be plated facing downward.
- Mode 15 According to Mode 15, in Modes 1 to 13, the substrate holder is configured to hold the substrate in the plating tank with the surface to be plated facing laterally.
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Abstract
Description
<めっき装置の全体構成>
図1は、第1実施形態のめっき装置の全体構成を示す斜視図である。図2は、第1実施形態のめっき装置の全体構成を示す平面図である。本実施形態のめっき装置は、基板に対してめっき処理を施すために使用される。基板は、角形基板、円形基板を含む。図1、2に示すように、めっき装置1000は、ロード/アンロードモジュール100、搬送ロボット110、アライナ120、プリウェットモジュール200、プリソークモジュール300、めっきモジュール400、洗浄モジュール500、スピンリンスドライヤモジュール600、搬送装置700、および、制御モジュール800を備える。
次に、めっきモジュール400の構成を説明する。本実施形態における24台のめっきモジュール400は同一の構成であるので、1台のめっきモジュール400のみを説明する。図3は、第1実施形態のめっきモジュール400の構成を概略的に示す縦断面図である。図3に示すように、めっきモジュール400は、めっき液を収容するためのめっき槽410を備える。めっき槽410は、上面が開口した円筒形の内槽412と、内槽412の上縁からオーバーフローしためっき液を溜められるように内槽412の周囲に設けられた図示しない外槽と、を含んで構成される。
図4は、本実施形態における白色共焦点式センサおよび基板断面の一例を示す図であり、図5および図6は、白色共焦点式センサによる信号検出値の一例を示す図である。図4に示すように、めっき処理を施すための基板Wfには、予め、レジストパターンが形成されている。白色共焦点式センサ(センサ460)は、複数の波長成分を有する照射光を発生する光源462と、基板Wfからの反射光を受光する受光部464と、受光部464で受光された光の波長成分に基づいて基板Wfまでの距離を計測する処理部466と、を有する。
センサ460として電位センサまたは磁場センサを採用する場合、センサ460は、基板Wfの被めっき面Wf-aを直接に検出対象とすることなく、被めっき面Wf-aに形成されるめっきの形成速度を推定することができる。センサ460は、基板Wfとアノード430との間のセンサ460が配置されている場所の電位または磁場を検出し、制御モジュール800またはセンサ460(膜厚測定モジュール)は、検出値に基づいて被めっき面Wf-aのめっきの形成速度を算出する。これは、めっき処理におけるめっき電流と電位または磁場とが相関することに基づく。めっき開始時から算出してきためっきの形成速度の時間変化を基に、現在のめっき膜厚を推定することができる。センサ460によって検出される電位または磁場に基づくめっき膜厚の推定は、公知の手法を採用することができる。一例として、膜厚測定モジュールは、検出信号に基づいてめっき処理中の基板内でのめっき電流の分布を推定し、推定しためっき電流の分布に基づいて、基板内でのめっき膜の膜厚分布を推定することができる。なお、特に電位の場合、比較的電位変化がない場所にも電位測定センサを置き、そこの電位との差をとることが好ましい。電位差の測定値の変化は非常に小さいものなので、ノイズの影響を受けやすい。ノイズを低減させるために、めっき液中に独立した電極を設置し、それを直接グラウンドに接続することが好ましい。その場合、めっき槽中に設置されている電極は、めっきの基板(カソード)、アノード、電位センサ2個(2つの電位差を測定)、そして、アース用の、少なくとも5個を置くことがさらに好ましい。
センサ460として渦電流式センサを採用する場合、センサ460は、基板Wfの渦電流によって形成される鎖交磁束を検出し、検出した鎖交磁束に基づいて、基板Wfのめっき膜厚を検出する。なお、本発明者らの研究により、センサ460として、渦電流式センサを採用した場合には、他のセンサを採用した場合に比して検出精度が低くなることが分かっている。これは、基板Wfに施されているレジストの影響によるものと考えられる。
また、制御モジュール800またはセンサ460(膜厚測定モジュール)は、センサ460による検出値に基づいて、めっき処理の終点検出をしてもよいし、めっき処理の終点までの時間予測をしてもよい。一例として、膜厚測定モジュールは、センサ460による検出値に基づいて、めっき膜の膜厚が所望の厚さとなったときに、めっき処理を終了してもよい。また、一例として、膜厚測定モジュールは、センサ460による検出値に基づいて、めっき膜の膜厚増加速度を算出し、所望の厚さとなるまでの時間、つまりめっき処理の終点までの時間を予測してもよい。
めっきモジュール400の構成の説明に戻る。一実施形態では、カソード領域422には、アノード430から基板Wfに流れる電流を遮蔽するための遮蔽体470が設けられる。遮蔽体470は、例えば誘電体材料からなる略板状の部材である。図7は、本実施形態の遮蔽体470と基板Wfとを下方から見た模式図である。なお、図7では、基板Wfを保持する基板ホルダ440の図示を省略している。遮蔽体470は、基板Wfの被めっき面Wf-aとアノード430との間に介在する遮蔽位置(図3および図7中、破線で示す位置)と、被めっき面Wf-aとアノード430との間から退避した退避位置(図3および図4中、実線で示す位置)とに移動可能に構成される。言い換えると、遮蔽体470は、被めっき面Wf-aの下方である遮蔽位置と、被めっき面Wf-aの下方から離れた退避位置とに移動可能に構成される。遮蔽体470の位置は、図示しない駆動機構により制御モジュール800によって制御される。遮蔽体470の移動は、モータまたはソレノイドなどの公知の機構により実現できる。図3および図7に示す例では、遮蔽体470は、遮蔽位置において、基板Wfの被めっき面Wf-aの外周領域の周方向の一部を遮蔽する。また、図7に示す例では、遮蔽体470は、基板Wfの中央方向に向かって細くなるテーパ状に形成されている。しかしながら、こうした例に限定されず、遮蔽体470は、実験などにより予め定められた任意の形状のものを使用することができる。
次に、本実施形態のめっきモジュール400におけるめっき処理についてより詳細に説明する。昇降機構442を用いて基板Wfをカソード領域422のめっき液に浸漬させることにより、基板Wfがめっき液に暴露される。めっきモジュール400は、この状態でアノード430と基板Wfとの間に電圧を印加することによって、基板Wfの被めっき面Wf-aにめっき処理を施すことができる。また、一実施形態では、回転機構448を用いて基板ホルダ440を回転させながらめっき処理が行われる。めっき処理により、基板Wf-aの被めっき面Wf-aに導電膜(めっき膜)が析出する。本実施形態では、めっき処理中にセンサ460によるリアルタイムの検出がなされる。そして、制御モジュール800は、センサ460による検出値に基づいてめっき膜の膜厚を測定する。これにより、めっき処理において基板Wfの被めっき面Wf-aに形成されるめっき膜の膜厚変化をリアルタイムに測定することができる。
図9は、第1実施形態の変形例のめっきモジュールの構成を概略的に示す縦断面図である。変形例のめっきモジュール400について、第1実施形態のめっきモジュール400と重複する部分については説明を省略する。変形例のめっきモジュール400では、センサ460を支持するためのセンサ支持体468が駆動機構468aによって移動可能に構成されている。これにより、センサ支持体468に支持されたセンサ460を移動させることができ、センサ460による検出位置を変更することができる。なお、限定するものではないが、駆動機構468aは、センサ460を基板Wfの半径方向に沿って移動させるように構成されてもよい。また、図9に示す例では、単一のセンサ460がセンサ支持体468に取り付けられているが、こうした例に限定されず、複数のセンサ460がセンサ支持体468に支持されて駆動機構468aによって移動可能に構成されてもよい。
図10は、第2実施形態のめっきモジュール400Aの構成を概略的に示す縦断面図である。第2実施形態では、基板Wfが鉛直方向に延在するように、つまり板面が水平方向を向くように保持される。図10に示すように、めっきモジュール400Aは、内部にめっき液を保持するめっき槽410Aと、めっき槽410A内に配置されたアノード430Aと、アノード430Aと、基板ホルダ440Aとを備えている。第2実施形態では、基板Wfとして角形基板を例に説明するが、第1実施形態と同様に、基板Wfは、角形基板、円形基板を含む。
図12は、変形例における、めっき槽内での基板Wfとセンサ460Aとを示す模式図である。図12に示す例では、4つのセンサ460Aが、被めっき面の4隅に近い位置に設けられており、図示しない駆動機構によって、4隅から内側に向かって移動できるように構成されている。特に角形基板では、基板Wfの角部付近の膜厚分布が面内均一性に大きな影響を及ぼす傾向があるため、こうしたセンサ460Aの配置によって、基板Wfにおける好適な位置の膜厚を測定することができる。なお、図12に示す例では、4つのセンサ460Aが設けられているが、1~3つ、又は5つ以上のセンサ460Aが設けられてもよい。また、センサ460Aは、互いに同期して対称に移動するように構成されてもよい。
[形態1]形態1によれば、めっき装置が提案され、前記めっき装置は、めっき槽と、基板を保持するための基板ホルダと、前記基板ホルダに保持された基板と対向するように前記めっき槽内に配置されたアノードと、前記基板の被めっき面に形成されるめっき膜に関するパラメータを検出するためのセンサを有し、めっき処理中に前記センサの検出値に基づいて前記めっき膜の膜厚を測定する膜厚測定モジュールと、を備える。
形態1によれば、めっき処理中にめっき膜の膜厚を測定することができる。これにより、基板に形成されるめっき膜の均一性の向上を図ることができる。
形態2によれば、基板に形成されるめっき膜の均一性を向上させることができる。
形態3によれば、遮蔽体を用いて、基板に形成されるめっき膜の均一性を向上させることができる。
形態4によれば、基板と抵抗体との距離を調整して、基板に形成されるめっき膜の均一性を向上させることができる。
形態5によれば、アノードマスクの開口寸法を調整して、基板に形成されるめっき膜の均一性を向上させることができる。
形態6によれば、センサによって基板の被めっき面を検出することができる。
形態7によれば、センサによってめっき槽内における磁場または電位を検出することができる。
形態10によれば、基板を回転させてセンサによる基板の検出位置を変更することができ、めっき処理中に基板に形成されるめっき膜をより好適に検出することができる。
形態11によれば、基板の複数の位置のめっき膜の膜厚を測定することができる。
形態12によれば、基板の複数の位置のめっき膜の膜厚を測定することができる。
形態13によれば、基板の複数の位置のめっき膜の膜厚を測定することができる。
410、410A…めっき槽
416…パドル
420…メンブレン
426…アノードマスク
430、430A…アノード
440、440A…基板ホルダ
442…昇降機構
448…回転機構
450…抵抗体
452…駆動機構
454…調整板
460、460A…センサ
462…光源
464…受光部
466…処理部
470…遮蔽体
800、800A…制御モジュール
1000…めっき装置
Wf…基板
Wf-a…被めっき面
Claims (15)
- めっき槽と、
基板を保持するための基板ホルダと、
前記基板ホルダに保持された基板と対向するように前記めっき槽内に配置されたアノードと、
前記基板の被めっき面に形成されるめっき膜に関するパラメータを検出するためのセンサを有し、めっき処理中に前記センサの検出値に基づいて前記めっき膜の膜厚を測定する膜厚測定モジュールと、
を備えるめっき装置。 - めっき処理中に、前記膜厚測定モジュールによって測定される前記めっき膜の膜厚に基づいて、めっき条件を調整するめっき条件調整モジュールを更に備える、請求項1に記載のめっき装置。
- 前記基板の前記被めっき面と前記アノードとの間に介在する遮蔽位置と、前記基板の前記被めっき面と前記アノードとの間から退避した退避位置と、に移動可能な遮蔽体を更に備え、
前記めっき条件調整モジュールは、前記めっき条件の調整として、前記遮蔽体の位置を調整する、
請求項2に記載のめっき装置。 - 前記アノードと前記基板との間に配置された抵抗体と、
前記基板と前記抵抗体との距離を変更可能な駆動機構と、を更に備え、
前記めっき条件調整モジュールは、前記めっき条件の調整として、前記基板と前記抵抗体との距離を変更する、
請求項2または3に記載のめっき装置。 - 前記アノードの上方に設けられ、開口寸法を変更可能なアノードマスクを更に備え、
前記めっき条件調整モジュールは、前記めっき条件の調整として、前記アノードマスクの前記開口寸法を変更する、
請求項2から4の何れか1項に記載のめっき装置。 - 前記センサは、白色共焦点式、または渦電流式のセンサである、請求項1から5の何れか1項に記載のめっき装置。
- 前記センサは、磁場センサ、または電位センサである、請求項1から5の何れか1項に記載のめっき装置。
- 前記膜厚測定モジュールは、前記センサによる検出信号に基づいてめっき処理中の前記基板内でのめっき電流の分布を推定するように構成される、請求項7に記載のめっき装置。
- 前記膜厚測定モジュールは、推定した前記基板内でのめっき電流の分布に基づいて、前記基板内での前記めっき膜の膜厚分布を推定するように構成される、請求項8に記載のめっき装置。
- 前記基板ホルダを回転させる回転機構を更に備え、
前記膜厚測定モジュールは、前記回転機構による前記基板の回転を伴って、前記めっき膜の膜厚を測定するように構成される、
請求項1から9の何れか1項に記載のめっき装置。 - 前記センサは、前記基板の外周部から内周部にわたって複数設けられている、請求項1から10の何れか1項に記載のめっき装置。
- 前記センサは、前記基板の外縁に沿って複数設けられている、請求項1から10の何れか1項に記載のめっき装置。
- 前記膜厚測定モジュールは、めっき処理中に、前記センサを前記基板の板面に沿って移動させるように構成される、請求項1から10の何れか1項に記載のめっき装置。
- 前記基板ホルダは、前記めっき槽内において、前記被めっき面を下方に向けた状態で前記基板を保持するように構成される、請求項1から13の何れか1項に記載のめっき装置。
- 前記基板ホルダは、前記めっき槽内において、前記被めっき面を側方に向けた状態で前記基板を保持するように構成される、請求項1から13の何れか1項に記載のめっき装置。
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