WO2022071150A1 - 仮固定用フィルム、仮固定用積層体、及び半導体装置の製造方法 - Google Patents

仮固定用フィルム、仮固定用積層体、及び半導体装置の製造方法 Download PDF

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Publication number
WO2022071150A1
WO2022071150A1 PCT/JP2021/035169 JP2021035169W WO2022071150A1 WO 2022071150 A1 WO2022071150 A1 WO 2022071150A1 JP 2021035169 W JP2021035169 W JP 2021035169W WO 2022071150 A1 WO2022071150 A1 WO 2022071150A1
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Prior art keywords
temporary fixing
meth
acrylate
semiconductor
light
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Ceased
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PCT/JP2021/035169
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English (en)
French (fr)
Japanese (ja)
Inventor
恭之 大山
笑 宮澤
雄太 赤須
省吾 祖父江
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Resonac Corp
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Showa Denko Materials Co Ltd
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Application filed by Showa Denko Materials Co Ltd filed Critical Showa Denko Materials Co Ltd
Priority to US18/246,855 priority Critical patent/US12581907B2/en
Priority to CN202180067233.1A priority patent/CN116323750A/zh
Priority to JP2022553911A priority patent/JPWO2022071150A1/ja
Priority to KR1020237009248A priority patent/KR20230084133A/ko
Publication of WO2022071150A1 publication Critical patent/WO2022071150A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J153/00—Adhesives based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Adhesives based on derivatives of such polymers
    • C09J153/02—Vinyl aromatic monomers and conjugated dienes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/023—Optical properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/02—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/387—Block-copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
    • C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates

Definitions

  • the present disclosure relates to a method for manufacturing a temporary fixing film, a temporary fixing laminate, and a semiconductor device.
  • SIP System in Package
  • a technology related to a package called SIP (System in Package) in which a plurality of semiconductor elements are laminated has been remarkably growing. Since a large number of semiconductor elements are stacked in a SIP type package, the semiconductor elements are required to be thin.
  • processing such as thinning by grinding the back surface of the semiconductor member and individualization by dicing a semiconductor wafer is performed. Is given.
  • the processing of these semiconductor members is usually performed by temporarily fixing the semiconductor member to the support member by a temporary fixing material layer (see, for example, Patent Documents 1 to 3).
  • Patent Document 1 discloses, as a method for separating such a semiconductor member, a method for physically separating the temporary fixing material layer while heating it. Further, Patent Documents 2 and 3 disclose a method of separating a semiconductor member by irradiating a temporary fixing material layer with laser light (coherent light).
  • the resin component in the temporary fixing material layer crawls up with respect to the semiconductor member, and the surface of the semiconductor member due to the resin component in the temporary fixing material layer Problems such as insufficient embedding of unevenness may occur. If such a defect occurs, the sealing material that protects the semiconductor member may not be sufficiently filled, or the sealing material may invade the surface of the semiconductor member. Further, in the above method for separating the semiconductor member, the temporary fixing material layer may adhere as a residue on the semiconductor member after the semiconductor member and the support member are separated. Such an attached residue can be peeled off by, for example, a peel or the like, but at that time, a part of the residue may remain on the semiconductor member as a peeling residue. If the peeling residue remains on the semiconductor member, the yield may decrease.
  • the present disclosure it is possible to form a temporary fixing material layer that can sufficiently suppress defects in temporarily fixing the semiconductor member and can sufficiently reduce the peeling residue after separating the semiconductor member and the supporting member.
  • the main purpose is to provide a temporary fixing film.
  • the temporary fixing film is used for temporarily fixing the semiconductor member and the support member.
  • the temporary fixing film contains a curable resin component.
  • the storage elastic modulus at 270 ° C. after curing of the temporary fixing film is 1.5 to 20 MPa.
  • the temporary fixing material layer made of the temporary fixing film in which the storage elastic modulus at 270 ° C. after curing of the temporary fixing film is in such a range particularly, 1.5 MPa or more
  • the semiconductor member is temporarily fixed. It is possible to sufficiently suppress the troubles when doing so.
  • the storage elastic modulus at 25 ° C. after curing of the temporary fixing film is 1.5 to 150 MPa.
  • the temporary fixing material layer made of the temporary fixing film whose storage elastic modulus at 25 ° C. after curing of the temporary fixing film is in such a range the peeling residue after separating the semiconductor member and the supporting member is sufficient. Can be reduced to.
  • the curable resin component may include a thermoplastic resin and a thermosetting resin.
  • the thermoplastic resin may be a hydrocarbon resin having a monomer unit derived from styrene.
  • the content of the monomer unit derived from styrene may be 10 to 22.5% by mass based on the total amount of the hydrocarbon resin, and 7 to 16% by mass based on the total amount of the curable resin component. good.
  • the content of the hydrocarbon resin may be 50% by mass or more based on the total amount of the thermoplastic resin.
  • the temporary fixing laminate includes a support member, a light absorption layer, and a temporary fixing material layer made of the above-mentioned temporary fixing film in this order.
  • the method for manufacturing the semiconductor device includes a step of preparing the above-mentioned temporary fixing laminate, a step of temporarily fixing the semiconductor member to the support member via the temporary fixing material layer, and a step of temporarily fixing the semiconductor member to the support member. It includes a step of processing the semiconductor member and a step of irradiating the temporary fixing laminate with light from the support member side to separate the semiconductor member from the support member.
  • the light may be incoherent light.
  • the incoherent light may be light including at least infrared light.
  • the light source may be a xenon lamp.
  • Temporary fixing film is provided. Further, according to the present disclosure, there is provided a method for manufacturing a temporary fixing laminate and a semiconductor device using such a temporary fixing film.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a temporary fixing film.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of the temporary fixing laminate.
  • 3A and 3B are schematic cross-sectional views showing an embodiment of a method for manufacturing a semiconductor device.
  • 4 (a), 4 (b), and 4 (c) are schematic cross-sectional views showing an embodiment of a method for manufacturing a semiconductor device.
  • 5 (a) and 5 (b) are schematic cross-sectional views showing an embodiment of a method for manufacturing a semiconductor device.
  • the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
  • the upper limit value or the lower limit value described in one numerical range may be replaced with the upper limit value or the lower limit value of another numerical range described stepwise. good.
  • the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
  • the upper limit value and the lower limit value described individually can be arbitrarily combined.
  • “A or B" may include either A or B, and may include both.
  • each component in the composition means the total amount of the plurality of substances present in the composition when a plurality of substances corresponding to each component are present in the composition, unless otherwise specified.
  • (meth) acrylic acid means acrylic acid or methacrylic acid corresponding thereto.
  • FIG. 1 is a schematic cross-sectional view showing an embodiment of a temporary fixing film.
  • the temporary fixing film 10 shown in FIG. 1 is used for temporarily fixing the semiconductor member and the support member. More specifically, the temporary fixing film 10 forms a layer (temporary fixing material layer) for temporarily fixing the semiconductor member to the support member while processing the semiconductor member in the manufacture of the semiconductor device. It is used to do so.
  • the temporary fixing film 10 contains a curable resin component and may be composed of a curable resin component.
  • the curable resin component can be a curable resin component that is cured by heat or light.
  • the curable resin component may be a curable resin component that is cured by heat, and may be, for example, a curable resin component containing a thermoplastic resin and a thermosetting resin.
  • the thermoplastic resin may be a resin having thermoplasticity, or at least a resin having thermoplasticity in an uncured state and forming a crosslinked structure after heating.
  • the thermoplastic resin include hydrocarbon resins, polycarbonates, polyphenylene sulfides, polyether sulfones, polyetherimides, polyimides, petroleum resins, novolak resins and the like. These may be used individually by 1 type or in combination of 2 or more type. Of these, the thermoplastic resin may be a hydrocarbon resin.
  • Hydrocarbon resin is a resin whose main skeleton is composed of hydrocarbons.
  • hydrocarbon resins include ethylene / propylene copolymers, ethylene / 1-butene copolymers, ethylene / propylene / 1-butene copolymer elastomers, ethylene / 1-hexene copolymers, and ethylene /.
  • 1-octene copolymer ethylene / styrene copolymer, ethylene / norbornen copolymer, propylene / 1-butene copolymer, ethylene / propylene / non-conjugated diene copolymer, ethylene / 1-butene / non-conjugated diene Copolymers, ethylene / propylene / 1-butene / non-conjugated diene copolymers, polyisoprenes, polybutadienes, styrene / butadiene / styrene block copolymers (SBS), styrene / isoprene / styrene block copolymers (SIS), Examples thereof include a styrene / ethylene / butylene / styrene block copolymer (SEBS) and a styrene / ethylene / propylene / SE
  • hydrocarbon resins may be hydrogenated. Further, these hydrocarbon resins may be carboxy-modified with maleic anhydride or the like. Of these, the hydrocarbon resin may contain a hydrocarbon resin having a monomer unit derived from styrene (that is, a styrene-based resin), and a hydrocarbon resin having a monomer unit derived from styrene (that is, a styrene-based resin). Resin) may be used.
  • the hydrocarbon resin may contain styrene / ethylene / butylene / styrene block copolymer (SEBS) or may be styrene / ethylene / butylene / styrene block copolymer (SEBS). ..
  • SEBS styrene / ethylene / butylene / styrene block copolymer
  • SEBS styrene / ethylene / butylene / styrene block copolymer
  • the content of the hydrocarbon resin (or styrene resin) may be 50% by mass or more, 70% by mass or more, or 90% by mass or more based on the total amount of the thermoplastic resin.
  • the content of the hydrocarbon resin (or styrene resin) may be 100% by mass or less based on the total amount of the thermoplastic resin.
  • the thermoplastic resin may be composed of a hydrocarbon resin (or a styrene-based resin).
  • the content of the styrene resin (or SEBS) may be 50% by mass or more, 70% by mass or more, or 90% by mass or more based on the total amount of the hydrocarbon resin.
  • the content of the styrene resin (or SEBS) may be 100% by mass or less based on the total amount of the hydrocarbon resin.
  • the hydrocarbon resin may be composed of a styrene resin (or SEBS).
  • the content of the monomer unit derived from styrene may be 10 to 22.5% by mass based on the total amount of the hydrocarbon resin (or thermoplastic resin).
  • the content of the monomer unit derived from styrene is in such a range, the storage elastic modulus of the temporary fixing film tends to be easily adjusted to a desired range, and the effect of the present disclosure tends to be remarkably exhibited. be.
  • the content of the monomer unit derived from styrene means the total content of the monomer units derived from styrene in the two or more kinds of styrene-based resins.
  • the content of the monomer unit derived from styrene may be 11% by mass or more, 12% by mass or more, or 13% by mass or more, or 22% by mass, based on the total amount of the hydrocarbon resin (or thermoplastic resin). It may be less than or equal to 21.5% by mass or less.
  • the content of the monomer unit derived from styrene is 7 to 16% by mass based on the total amount of the curable resin component. good.
  • the content of the monomer unit derived from styrene is in such a range, the storage elastic modulus of the temporary fixing film tends to be easily adjusted to a desired range, and the effect of the present disclosure tends to be remarkably exhibited. be.
  • the content of the monomer unit derived from styrene means the total content of the monomer units derived from styrene in the two or more kinds of styrene-based resins.
  • the content of the monomer unit derived from styrene may be 7.5% by mass or more, 8% by mass or more, or 9% by mass or more, and 15.5% by mass or less, based on the total amount of the curable resin component. Alternatively, it may be 15% by mass or less.
  • the Tg of the thermoplastic resin may be -100 to 500 ° C, -50 to 300 ° C, or -50 to 50 ° C.
  • the Tg of the thermoplastic resin is 500 ° C. or lower, it is easy to secure flexibility when a film-shaped temporary fixing material is formed, and it tends to be possible to improve low-temperature stickability.
  • the Tg of the thermoplastic resin is ⁇ 100 ° C. or higher, when a film-shaped temporary fixing material is formed, it tends to be possible to suppress deterioration of handleability and peelability due to excessively high flexibility.
  • the Tg of the thermoplastic resin is the intermediate point glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the thermoplastic resin is an intermediate point glass calculated by a method compliant with JIS K7121 by measuring the change in calorific value under the conditions of a temperature rise rate of 10 ° C./min and a measurement temperature of -80 to 80 ° C. The transition temperature.
  • the weight average molecular weight (Mw) of the thermoplastic resin may be 10,000 to 5 million or 100,000 to 2 million. When the weight average molecular weight is 10,000 or more, it tends to be easy to secure the heat resistance of the formed temporary fixing material layer. When the weight average molecular weight is 5 million or less, when a film-shaped temporary fixing material layer or a resin layer is formed, it tends to be easy to suppress a decrease in flow and a decrease in stickability.
  • the weight average molecular weight is a polystyrene-equivalent value using a calibration curve made of standard polystyrene by gel permeation chromatography (GPC).
  • the content of the thermoplastic resin may be, for example, 40 to 90 parts by mass with respect to 100 parts by mass of the total amount of the curable resin component.
  • the content of the thermoplastic resin may be, for example, 50 parts by mass or more or 60 parts by mass or more, and 85 parts by mass or less or 80 parts by mass or less with respect to 100 parts by mass of the total amount of the curable resin component. good.
  • the temporary fixing material layer tends to be more excellent in thin film forming property and flatness.
  • thermosetting resin is a resin that exhibits curability by heat, and is a concept that does not include the above-mentioned thermoplastic resin (hydrocarbon resin).
  • thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin. These may be used individually by 1 type or in combination of 2 or more type. Of these, the thermosetting resin may be an epoxy resin because it is excellent in heat resistance, workability, and reliability.
  • the epoxy resin is not particularly limited as long as it is cured and has a heat resistant effect.
  • the epoxy resin include bifunctional epoxy resins such as bisphenol A type epoxy, novolak type epoxy resins such as phenol novolac type epoxy resin, cresol novolac type epoxy resin, and alicyclic epoxy resins such as dicyclopentadiene type epoxy resin. Can be mentioned.
  • the epoxy resin may be, for example, a polyfunctional epoxy resin, a glycidylamine type epoxy resin, or a heterocyclic-containing epoxy resin. Among these, the epoxy resin may contain an alicyclic epoxy resin from the viewpoint of heat resistance and weather resistance.
  • the thermosetting resin may be a combination of the epoxy resin and the epoxy resin curing agent.
  • the epoxy resin curing agent a commonly used known curing agent can be used.
  • the epoxy resin curing agent include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (bisphenol A, bisphenol F, bisphenol S, etc.), phenol resins (phenol novolac resin, bisphenol A type novolak resin, etc.). Cresol novolak resin, phenol aralkyl resin, etc.) and the like.
  • the content of the thermosetting resin may be, for example, 10 to 60 parts by mass with respect to 100 parts by mass of the total amount of the curable resin component.
  • the content of the thermosetting resin may be, for example, 15 parts by mass or more or 20 parts by mass or more, and 50 parts by mass or less or 40 parts by mass or less with respect to 100 parts by mass of the total amount of the curable resin component. May be good.
  • the temporary fixing material layer tends to be more excellent in thin film forming property and flatness.
  • the curable resin component may further contain a curing accelerator that promotes the curing reaction of a thermosetting resin such as an epoxy resin.
  • a curing accelerator such as imidazole derivative, dicyandiamide derivative, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo [5, 4,0] Undecene-7-tetraphenylborate and the like can be mentioned. These may be used individually by 1 type or in combination of 2 or more type.
  • the content of the curing accelerator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the thermosetting resin. When the content of the curing accelerator is within such a range, the curability of the curable resin component and the heat resistance after curing tend to be more excellent.
  • the content of the curing accelerator is 1.0 part by mass with respect to 100 parts by mass of the total amount of the thermosetting resin because it is easy to adjust the storage elastic modulus at 270 ° C. and the storage elastic modulus at 25 ° C. within a predetermined range. As mentioned above, it may be 1.2 parts by mass or more, 1.5 parts by mass or more, 3.0 parts by mass or less, 2.5 parts by mass or less, or 2.0 parts by mass or less.
  • the curable resin component may further contain a polymerizable monomer and a polymerization initiator.
  • the polymerizable monomer is not particularly limited as long as it is polymerized by heating or irradiation with ultraviolet light or the like.
  • the polymerizable monomer may be a compound having a polymerizable functional group such as an ethylenically unsaturated group from the viewpoint of material selectivity and availability.
  • Examples of the polymerizable monomer include (meth) acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, vinyl arylated and the like. Of these, the polymerizable monomer may be (meth) acrylate.
  • the (meth) acrylate may be monofunctional (monofunctional), bifunctional, or trifunctional or higher, but may be bifunctional or higher (meth) acrylate from the viewpoint of obtaining sufficient curability. good.
  • Examples of the monofunctional (meth) acrylate include (meth) acrylic acid; methyl (meth) acrylate, ethyl (meth) acrylate, butyl (meth) acrylate, isobutyl (meth) acrylate, tert-butyl (meth) acrylate, and butoxy.
  • Ethyl (meth) acrylate isoamyl (meth) acrylate, hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, heptyl (meth) acrylate, octylheptyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate 2-Hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-chloro-2-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, methoxypolyethylene glycol (meth) acrylate, ethoxypolyethylene Acrylate (meth) acrylates such as glycol (meth) acrylate, methoxypolypropylene glycol (meth) acrylate, ethoxypolypropylene glycol (meth) acrylate, mono (2-
  • bifunctional (meth) acrylate examples include ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, and polyethylene glycol di (meth).
  • trifunctional or higher polyfunctional (meth) acrylate examples include trimethyl propanoltri (meth) acrylate, ethoxylated trimethylol propanthry (meth) acrylate, propoxylated trimethylol propanthry (meth) acrylate, and ethoxylated propoxylation.
  • These (meth) acrylates may be used alone or in combination of two or more. Furthermore, these (meth) acrylates may be used in combination with other polymerizable monomers.
  • the content of the polymerizable monomer may be 0 to 50 parts by mass with respect to 100 parts by mass of the total amount of the curable resin component.
  • the polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light or the like.
  • the polymerizable initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.
  • thermal radical polymerization initiator examples include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butylperoxypivalate, t-hexylperoxypivalate, 1, 1,3,3-Tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis (2-ethylhexanoylperoxy) hexane, t-hexylperoxy-2-ethyl Hexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-hexylperoxyisopropylmonocarbonate, t-butylperoxy-3,5,5-trimethylhexano Ate, t-butyl peroxylaurylate, t-butyl
  • photoradical polymerization initiator examples include benzoinketals such as 2,2-dimethoxy-1,2-diphenylethane-1-one; 1-hydroxycyclohexylphenylketone and 2-hydroxy-2-methyl-1-phenylpropane.
  • ⁇ -Hydroxyketones such as -1-one, 1- [4- (2-hydroxyethoxy) phenyl] -2-hydroxy-2-methyl-1-propane-1-one; bis (2,4,6-trimethyl)
  • examples thereof include benzoyl) phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) -2,4,4-trimethylpentylphosphine oxide, and phosphine oxides such as 2,4,6-trimethylbenzoyldiphenylphosphine oxide.
  • thermal and photoradical polymerization initiators may be used alone or in combination of two or more.
  • the content of the polymerization initiator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the polymerizable monomer.
  • the curable resin component may further contain an insulating filler, a sensitizer, an antioxidant and the like as other components.
  • the insulating filler can be added for the purpose of imparting low thermal expansion, low hygroscopicity, etc. to the temporary fixing material layer.
  • the insulating filler include non-metal inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramics. These insulating fillers may be used alone or in combination of two or more.
  • the insulating filler may be particles whose surface is treated with a surface treatment agent from the viewpoint of dispersibility with a solvent.
  • the surface treatment agent may be, for example, a silane coupling agent.
  • the content of the insulating filler may be 0.1 to 20 parts by mass with respect to 100 parts by mass of the total amount of the curable resin component.
  • the heat resistance tends to be further improved without hindering light transmission. Further, if the content of the insulating filler is within such a range, it may contribute to light peelability.
  • sensitizer examples include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthene, indanslen, thioxanthene-9-on, 2-isopropyl-9H-thioxanthene-9-on, 4-.
  • examples thereof include isopropyl-9H-thioxanthene-9-one, 1-chloro-4-propoxythioxanthone and the like.
  • the content of the sensitizer may be 0.01 to 10 parts by mass with respect to 100 parts by mass of the total amount of the curable resin component.
  • the content of the sensitizer is within such a range, the influence on the characteristics and the thin film property of the curable resin component tends to be small.
  • antioxidants examples include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol (hindered phenol derivatives), and 2,2,6,6-tetramethylpiperidin-.
  • quinone derivatives such as benzoquinone and hydroquinone
  • phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol (hindered phenol derivatives)
  • 2,2,6,6-tetramethylpiperidin- examples include aminoxyl derivatives such as 1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl, and hindered amine derivatives such as tetramethylpiperidylmethacrylate.
  • the content of the antioxidant may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the total amount of the curable resin component. When the content of the antioxidant is within such a range, it tends to be possible to suppress the decomposition of the curable resin component and prevent contamination.
  • the thickness of the temporary fixing film 10 may be, for example, 0.1 to 200 ⁇ m, 1 to 150 ⁇ m, or 10 to 100 ⁇ m from the viewpoint of stress relaxation.
  • the shear viscosity at 100 ° C. of the temporary fixing film may be, for example, 1000 Pa ⁇ s or more, 2000 Pa ⁇ s or more, or 3000 Pa ⁇ s or more, and 80,000 Pa ⁇ s or less, 60,000 Pa ⁇ s or less, 40,000 Pa ⁇ s or less, or It may be 30,000 Pa ⁇ s or less.
  • the shear viscosity at 100 ° C. is in such a range, a defect in temporarily fixing the semiconductor member (particularly, with respect to the semiconductor member of the resin component in the temporary fixing material layer when the semiconductor member is arranged on the temporary fixing material layer). Crawling up) can be suppressed more sufficiently.
  • the shear viscosity of the temporary fixing film at 100 ° C. means a value measured by the method described in Examples. That is, in the measurement of the shear viscosity, a temporary fixing film having a thickness of 500 ⁇ m is prepared, and the shear viscosity is measured using ARES (manufactured by Rheometric Scientific Co., Ltd.). The measurement sample is prepared by punching to a diameter of 9 mm ⁇ . The measurement is performed by raising the temperature at a heating rate of 5 ° C./min while applying a strain of 5% to the measurement sample. At this time, the value observed at 100 ° C. is defined as the shear viscosity at 100 ° C.
  • the shear viscosity at 100 ° C. of the temporary fixing film is increased by, for example, increasing the content of the thermoplastic resin (hydrocarbon resin) or applying a thermoplastic resin (hydrocarbon resin) having a high Tg. be able to.
  • the storage elastic modulus at 270 ° C. after curing of the temporary fixing film is 1.5 to 20 MPa.
  • the storage elastic modulus at 270 ° C. after curing is in such a range (particularly, 1.5 MPa or more), a defect in temporarily fixing the semiconductor member (particularly, the semiconductor member is placed on the temporary fixing material layer). Crawling of the resin component to the semiconductor member in the temporary fixing material layer) can be sufficiently suppressed.
  • the storage elastic modulus at 270 ° C. after curing of the temporary fixing film may be 1.6 MPa or more or 1.8 MPa or more, and may be 15 MPa or less, 10 MPa or less, 8 MPa or less, 5 MPa or less, or 3 MPa or less. good.
  • the storage elastic modulus at each temperature of the temporary fixing film after curing means a value measured by the method described in Examples after curing by the method described in Examples. That is, in the measurement of the storage elastic modulus, a temporary fixing film having a thickness of 500 ⁇ m is prepared, the temporary fixing film is cut into a predetermined size (length (distance between chucks) 20 mm ⁇ width 5.0 mm), and a clean oven (clean oven) ( By heat-curing at 180 ° C. for 2 hours in (manufactured by Espec Co., Ltd.), a measurement sample which is a cured product of the temporary fixing film is obtained.
  • the storage elastic modulus at 270 ° C. and 25 ° C. after curing of the temporary fixing film (storage elastic modulus at 270 ° C. and 25 ° C. in the cured product of the temporary fixing film) is measured under the following conditions.
  • Dynamic viscoelasticity measuring device manufactured by TA Instrument Co., Ltd., RSA-G2
  • Measurement temperature range -70 to 300 ° C
  • Temperature rise rate 5 ° C / min
  • Frequency 1Hz
  • Measurement mode Tension mode
  • the storage elastic modulus at 25 ° C. after curing of the temporary fixing film is 1.5 to 150 MPa.
  • the storage elastic modulus at 25 ° C. after curing is in such a range, the peeling residue after separating the semiconductor member and the support member can be sufficiently reduced.
  • the storage elastic modulus at 25 ° C. after curing of the temporary fixing film is 1.5 MPa or more, sufficient peel strength tends to be obtained.
  • after curing of the temporary fixing film is 3 MPa or more, 5 MPa or more, 10 MPa or more, 12 MPa or more, 15 MPa or more, 20 MPa or more, 25 MPa or more, 30 MPa or more, 35 MPa or more, 40 MPa or more, 45 MPa or more, 50 MPa. It may be more than or equal to 52 MPa or more, and may be 140 MPa or less, 120 MPa or less, 110 MPa or less, 100 MPa or less, or 90 MPa or less.
  • thermoplastic resin having a high Tg that increases the content of the thermoplastic resin (hydrogen resin) is applied. It can be increased by a method such as adding an insulating filler to the curable resin component.
  • the temporary fixing film 10 for example, first, the components constituting the curable resin component are dissolved or dispersed by stirring and mixing in a solvent, kneading, or the like to prepare a varnish of the curable resin component. .. Then, the varnish of the curable resin component is applied onto the release-treated support film using a knife coater, a roll coater, an applicator, a comma coater, a die coater, etc., and then the solvent is volatilized by heating. A temporary fixing film composed of a curable resin component is formed on the support film. At this time, the thickness of the temporary fixing film can be adjusted by adjusting the amount of the varnish coated with the curable resin component.
  • the solvent used in the preparation of the curable resin component varnish is not particularly limited as long as it has the property of uniformly dissolving or dispersing each component.
  • a solvent include aromatic hydrocarbons such as toluene, xylene, mesityrene, cumene, and p-simene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4-.
  • Cyclic ethers such as dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, ⁇ -butyrolactone, etc.
  • the solvent may be toluene, xylene, heptane, or cyclohexanone from the viewpoint of solubility and boiling point.
  • the concentration of solid components in the varnish may be 10 to 80% by mass based on the total mass of the varnish.
  • Stirring and mixing or kneading at the time of preparing the varnish of the curable resin component can be performed by using, for example, a stirrer, a raider, a three-roll roll, a ball mill, a bead mill, a homodisper or the like.
  • the supporting film examples include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyesters such as polyethylene and polypropylene; polycarbonates, polyamides, polyimides, polyamideimides, polyetherimides, polyethersulfides, and polyethers. Examples thereof include sulfone, polyether ketone, polyphenylene ether, polyphenylene sulfide, poly (meth) acrylate, polysulfone, and a film of liquid crystal polymer.
  • the thickness of the support film may be, for example, 1 to 250 ⁇ m.
  • the heating conditions for volatilizing the solvent from the varnish of the curable resin component coated on the support film can be appropriately set according to the solvent to be used and the like.
  • the heating conditions may be, for example, 40 to 120 ° C. for 0.1 to 30 minutes.
  • FIG. 2 is a schematic cross-sectional view showing an embodiment of the temporary fixing laminate.
  • the temporary fixing laminate 20 shown in FIG. 2 includes a support member 22, a light absorption layer 12, and a temporary fixing material layer 10A composed of a temporary fixing film 10 in this order.
  • the temporary fixing material layer 10A has a surface S on the opposite side of the temporary fixing material layer 10A from the light absorption layer 12.
  • the support member 22 is a plate-shaped body having a high transmittance and capable of withstanding a load received during processing of the semiconductor member.
  • Examples of the support member 22 include an inorganic glass substrate, a transparent resin substrate, and the like.
  • the thickness of the support member 22 may be, for example, 0.1 to 2.0 mm. When the thickness of the support member 22 is 0.1 mm or more, handling tends to be easy. When the thickness of the support member 22 is 2.0 mm or less, the material cost tends to be suppressed.
  • the light absorption layer 12 is a layer that absorbs light and generates heat.
  • the light absorption layer 12 may be, for example, a conductor layer containing a conductor that absorbs light and generates heat.
  • Examples of the conductor constituting the conductor layer include metals, metal oxides, conductive carbon materials, and the like.
  • the metal may be a single metal such as chromium, copper, titanium, silver, platinum or gold, or may be an alloy such as nickel-chromium, stainless steel or copper-zinc.
  • the metal oxide include indium tin oxide (ITO), zinc oxide, niobium oxide and the like. These may be used individually by 1 type or in combination of 2 or more type.
  • the conductor may be chromium, titanium, or a conductive carbon material.
  • the light absorption layer 12 may be a single layer or a metal layer composed of a plurality of layers, and may be, for example, a metal layer composed of a copper layer and a titanium layer.
  • the light absorbing layer 12 When the light absorbing layer 12 is a single metal layer, the light absorbing layer 12 has tallium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), chromium (Cr), and the like. It may contain at least one metal selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au).
  • the light absorption layer 12 is composed of two layers, a first layer and a second layer, and may be laminated in the order of the first layer and the second layer from the support member 22 side.
  • the first layer of the light absorption layer 12 is selected from the group consisting of tarium (Ta), platinum (Pt), nickel (Ni), titanium (Ti), tungsten (W), and chromium (Cr).
  • the second layer of the light absorbing layer 12 may contain at least one metal, and the second layer of the light absorbing layer 12 is at least one selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), and gold (Au). It may contain seed metals.
  • the thickness of the light absorption layer 12 may be 1 to 5000 nm, 100 to 3000 nm, or 50 to 300 nm from the viewpoint of light peelability.
  • the thickness of the light absorption layer 12 is 75 nm or more, 90 nm or more, or 100 nm or more from the viewpoint of good peelability. It may be 1000 nm or less, 800 nm or less, 500 nm or less, or 300 nm or less.
  • the thickness of the light absorption layer 12 is 100 nm or more, 125 nm or more, 150 nm or more, or 200 nm or more from the viewpoint of good peelability. It may be 1000 nm or less, 800 nm or less, or 500 nm or less.
  • the temporary fixing material layer 10A is a layer made of the temporary fixing film 10.
  • the thickness of the temporary fixing material layer 10A may be, for example, 0.1 to 200 ⁇ m, 1 to 150 ⁇ m, or 10 to 100 ⁇ m from the viewpoint of stress relaxation.
  • the method for manufacturing the temporary fixing laminate 20 is not particularly limited as long as a laminate having a predetermined configuration can be obtained.
  • the temporary fixing laminate 20 is, for example, by a method including a step of forming a light absorption layer 12 on the support member 22 and a step of attaching the above-mentioned temporary fixing film 10 on the formed light absorption layer 12. Can also be obtained.
  • the light absorption layer 12 can be obtained by forming a metal layer on the support member 22 by physical vapor deposition (PVD) such as vacuum deposition or sputtering, or chemical vapor deposition (CVD) such as plasma chemical vapor deposition. ..
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • the light absorption layer 12 can also be obtained by forming a plating layer on the support member 22 by electrolytic plating or electroless plating. According to physical vapor deposition, even if the support member 22 has a large area, a metal layer as a light absorption layer 12 that covers the surface of the support member 22 can be efficiently formed.
  • Examples of the method of pasting the temporary fixing film 10 on the light absorbing layer 12 include a heat press, a roll laminating, and a vacuum laminating method. Lamination can be performed, for example, under temperature conditions of 0 to 120 ° C.
  • the method for manufacturing a semiconductor device is a step of preparing the above-mentioned temporary fixing laminate (preparation step) and a step of temporarily fixing the semiconductor member to the support member via the temporary fixing material layer (temporary fixing step).
  • the fixing process the process of processing the semiconductor member temporarily fixed to the support member (processing process), and the temporary fixing laminate being irradiated with light from the support member side to irradiate the semiconductor member from the support member. It includes a step of separating (separation step).
  • the temporary fixing laminate 20 for temporarily fixing the semiconductor member to the support member is prepared while processing the semiconductor member.
  • Temporal fixing process 3A and 3B are schematic cross-sectional views showing an embodiment of a method for manufacturing a semiconductor device.
  • the semiconductor member 40 is temporarily fixed to the support member 22 via the temporary fixing material layer 10A.
  • the temporary fixing material layer 10A has a surface S on the opposite side of the temporary fixing material layer 10A from the light absorption layer 12.
  • the semiconductor is formed by curing the temporary fixing material layer 10A (temporary fixing film 10) in a state where the semiconductor member 40 is arranged on the temporary fixing material layer 10A (see FIG. 3A).
  • the member 40 can be temporarily fixed to the support member 22 (see FIG. 3B).
  • the semiconductor member 40 can be temporarily adhered to the support member 22 via the temporary fixing material layer 10Ac containing the cured product (cured product of the curable resin component) of the temporary fixing film 10.
  • the laminated body 30 including the temporary fixing laminated body 20c and the semiconductor member 40 provided on the temporary fixing laminated body 20c is formed.
  • the semiconductor member 40 may have a semiconductor substrate 42 and a rewiring layer 44.
  • the semiconductor member 40 has a support member via the temporary fixing material layer 10A in the direction in which the rewiring layer is located on the temporary fixing material layer 10A side. It is temporarily fixed to 22.
  • the semiconductor member 40 may further have an external connection terminal.
  • the semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of FIG. 3A, a plurality of semiconductor members 40 are arranged on the surface S of the temporary fixing material layer 10A, but the number of semiconductor members 40 may be one.
  • the thickness of the semiconductor member 40 may be 1 to 1000 ⁇ m, 10 to 500 ⁇ m, or 20 to 200 ⁇ m from the viewpoint of suppressing cracking during transportation, processing, etc., in addition to miniaturization and thinning of the semiconductor device. good.
  • the semiconductor member 40 arranged on the temporary fixing material layer 10A is crimped to the temporary fixing material layer 10A by using, for example, a vacuum press or a vacuum laminator.
  • the crimping conditions may be an atmospheric pressure of 1 hPa or less, a crimping pressure of 1 MPa, a crimping temperature of 120 to 200 ° C., and a holding time of 100 to 300 seconds.
  • the crimping conditions are, for example, an atmospheric pressure of 1 hPa or less, a crimping temperature of 60 to 180 ° C. or 80 to 150 ° C., a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1. It may be from ⁇ 600 seconds or 30 to 300 seconds.
  • the temporary fixing material layer 10A (curable resin component) is thermally cured or photocured so that the semiconductor member 40 is a cured product of the temporary fixing film 10. It is temporarily fixed to the support member 22 via the temporary fixing material layer 10Ac containing (cured product of curable resin component).
  • the conditions for thermosetting may be, for example, 300 ° C. or lower or 100 to 250 ° C. for 1 to 180 minutes or 1 to 120 minutes.
  • FIG. 4A shows an example of processing including thinning of a semiconductor substrate. Processing of semiconductor members is not limited to this, for example, thinning of semiconductor substrates, division of semiconductor members (dicing), formation of through silicon vias (through silicon vias), etching processing, plating reflow processing, sputtering processing, or these. Can include combinations of.
  • a sealing layer 50 for sealing the processed semiconductor member 40 is formed.
  • the sealing layer 50 can be formed by using a sealing material usually used for manufacturing a semiconductor device.
  • the sealing layer 50 may be formed of a thermosetting resin composition.
  • the thermosetting resin composition used for the sealing layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin.
  • the thermosetting resin composition for forming the sealing layer 50 and the sealing layer 50 may contain an additive such as a filler and / or a flame retardant.
  • the sealing layer 50 is formed by using, for example, a solid material, a liquid material, a fine-grained material, or a sealing film.
  • a sealing film When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, or the like is used. For example, using these devices, sealing by thermal melting under the conditions of 40 to 180 ° C (or 60 to 150 ° C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes.
  • the sealing layer 50 can be formed by covering the semiconductor member 40 with a film. The thickness of the sealing film is adjusted so that the sealing layer 50 is equal to or larger than the thickness of the processed semiconductor member 40.
  • the thickness of the sealing film may be 50 to 2000 ⁇ m, 70 to 1500 ⁇ m, or 100 to 1000 ⁇ m.
  • the sealing layer 50 and the temporary fixing material layer 10Ac may be divided into a plurality of portions including one semiconductor member 40 each.
  • (Separation process) 5 (a) and 5 (b) are schematic cross-sectional views showing an embodiment of a method for manufacturing a semiconductor device.
  • the separation step the semiconductor member is separated from the support member by irradiating the temporary fixing laminate with light from the support member side.
  • the temporary fixing laminate 20c is irradiated with light A from the support member 22 side to separate the semiconductor member 40 from the support member 22.
  • the light absorption layer 12 absorbs light and instantaneously generates heat.
  • the generated heat may cause, for example, melting of the temporary fixing material layer 10Ac, thermal stress generated between the support member 22 and the semiconductor member 40, and scattering of the light absorbing layer 12.
  • One or two or more of these phenomena are the main causes of coagulation peeling, interface peeling, and the like, and the semiconductor member 40 can be easily separated from the support member 22.
  • a slight stress may be applied to the semiconductor member 40 together with the irradiation of light A.
  • the light A in the separation step may be incoherent light.
  • Incoherent light is light that is not coherent, and is an electromagnetic wave having properties such as no interference fringes, low coherence, and low directivity. Incoherent light tends to be attenuated as the optical path length becomes longer.
  • Laser light is generally coherent light, whereas light such as sunlight and fluorescent light is incoherent light.
  • Incoherent light can also be said to be light excluding laser light. Since the irradiation area of the incoherent light is generally primarily wider than that of the coherent light (that is, laser light), it is possible to reduce the number of irradiations. For example, a single irradiation can result in the separation of the plurality of semiconductor members 40.
  • the incoherent light may include infrared rays.
  • the incoherent light may be pulsed light.
  • the light source is not particularly limited, but may be a xenon lamp.
  • a xenon lamp is a lamp that utilizes light emission by application / discharge in an arc tube filled with xenon gas. Since the xenon lamp discharges while repeating ionization and excitation, it has a stable continuous wavelength from the ultraviolet light region to the infrared light region. Since the xenon lamp requires a shorter start time than a lamp such as a metal halide lamp, the time required for the process can be significantly shortened. Further, since it is necessary to apply a high voltage for light emission, high heat is generated instantaneously, but the xenon lamp is also advantageous in that the cooling time is short and continuous work is possible.
  • the irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (distance between the light source and the light absorption layer), irradiation energy, etc., and these can be arbitrarily set according to the number of irradiations and the like. .. From the viewpoint of reducing damage to the semiconductor member 40, irradiation conditions may be set so that the semiconductor member 40 can be separated by a single irradiation.
  • a part of the temporary fixing material layer 10Ac may adhere as a residue on the separated semiconductor member 40.
  • the attached residue is removed as shown in FIG. 5 (b).
  • the attached residue may be peeled off, for example, by peeling. Since the temporary fixing film of the present embodiment can sufficiently reduce the peeling residue after separating the semiconductor member and the supporting member, it can be efficiently peeled off by peeling.
  • the adhered residue may be removed by washing with a solvent, for example.
  • the solvent is not particularly limited, and examples thereof include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These may be used individually by 1 type or in combination of 2 or more type.
  • the semiconductor member 40 may be immersed in a solvent or ultrasonic cleaning may be performed. The semiconductor member 40 may be heated at a low temperature of about 100 ° C. or lower.
  • the semiconductor element 60 including the processed semiconductor member 40 can be obtained by the above-exemplified method.
  • a semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a substrate for mounting a semiconductor element.
  • (A-2) Maleic anhydride-modified styrene / ethylene / butylene / styrene block copolymer (trade name: FG1901GT, manufactured by Clayton Polymer Japan Co., Ltd., styrene content: 30.0% by mass), 25% by mass concentration of xylene Used as a solution.
  • (B-2) Dicyclopentadiene type epoxy resin (trade name: HP7200H, manufactured by DIC Corporation) was used as a cyclohexanone solution having a concentration of 50% by mass.
  • (B-3) Dicyclopentadiene type epoxy resin (trade name: HP7200H, manufactured by DIC Corporation) was used as a xylene solution having a concentration of 50% by mass.
  • (D) Curing accelerator (D-1) Imidazole derivative (trade name: 2PZ-CN, manufactured by Shikoku Chemicals Corporation) was used as a cyclohexanone solution having a concentration of 10% by mass.
  • the materials shown in Table 1 were mixed at the ratio shown in Table 1 (the numerical values in Table 1 mean the non-volatile content) to obtain a varnish as a curable resin component.
  • a mold release surface of a polyethylene terephthalate (PET) film (Purex A31, manufactured by Toyobo Film Solution Co., Ltd., thickness: 38 ⁇ m) as a support film for the obtained curable resin component varnish using a precision coating machine. was painted on.
  • the coating film was dried by heating at 100 ° C. for 10 minutes to obtain temporary fixing films (curable resin films) of Examples 1 to 3 and Comparative Examples 1 and 2.
  • the storage elastic modulus was measured using the temporary fixing films of Examples 1 to 3 and Comparative Examples 1 and 2.
  • a temporary fixing film having a thickness of 500 ⁇ m was prepared.
  • the temporary fixing film is cut into a predetermined size (length (distance between chucks) 20 mm x width 5.0 mm) and thermoset in a clean oven (manufactured by Espec Co., Ltd.) at 180 ° C for 2 hours.
  • a measurement sample which is a cured product of a temporary fixing film (curable resin film), was obtained.
  • the storage elastic moduli at 270 ° C. and 25 ° C. in the cured product of the temporary fixing film (curable resin film) were measured under the following conditions. The results are shown in Table 1.
  • Dynamic viscoelasticity measuring device manufactured by TA Instrument Co., Ltd., RSA-G2
  • Measurement temperature range -70 to 300 ° C
  • Temperature rise rate 5 ° C / min
  • Frequency 1Hz
  • Measurement mode Tension mode
  • the implantability was evaluated using the temporary fixing films of Examples 1 to 3 and Comparative Examples 1 and 2.
  • a temporary fixing film having a thickness of 80 ⁇ m was prepared.
  • the support film of the temporary fixing film was peeled off, and the surface of the temporary fixing film on the peeled side was laminated on the slide glass at 100 ° C.
  • a semiconductor chip having a semicircular step of 7.3 mm square, a thickness of 150 ⁇ m, and a surface of 40 ⁇ m under the conditions of a temperature of 130 ° C./pressure of 50 N / hour for 10 seconds was placed on the surface having the semicircular step.
  • the peel strength was measured using the temporary fixing films of Examples 1 to 3 and Comparative Examples 1 and 2.
  • a temporary fixing film having a thickness of 80 ⁇ m was prepared.
  • the peel strength was evaluated by measuring the 90 ° peel strength between the silicon mirror wafer and the temporary fixing film.
  • a silicon mirror wafer (6 inches) with a thickness of 625 ⁇ m is placed on the stage of a vacuum laminator (LM-50X50-S manufactured by NPC Co., Ltd.), the support film of the temporary fixing film is peeled off, and the temporary fixing film is peeled off.
  • the surface on the support film side of the above was arranged so as to be in contact with the silicon mirror wafer.
  • the sample Under the condition of 1.5 kPa (15 mbar), the sample was obtained by heating and pressurizing at a temperature of 120 ° C. and a pressure of 0.1 MPa for 2 minutes and vacuum laminating. The obtained sample was subsequently heated at 200 ° C. for 1 hour to cure. Then, the sample was cut into a width of 10 mm and used as a measurement sample. The measurement sample was subjected to a peeling test at a speed of 50 mm / min with a peeling tester set so that the peeling angle was 90 °, and this was defined as the peeling strength. The results are shown in Table 1.
  • the temporary fixing film of the example in which the storage elastic modulus at 270 ° C. after curing is 1.5 to 20 MPa and the storage elastic modulus at 25 ° C. after curing is 1.5 to 150 MPa is It was excellent in terms of defects (embedding property and creeping up of resin components) and peeling residue. From these results, the temporary fixing film of the present disclosure can sufficiently suppress defects in temporary fixing of the semiconductor member, and sufficiently reduce the peeling residue after separating the semiconductor member and the support member. It was confirmed that it is possible to form a temporary fixing material layer that can be formed.
  • Temporary fixing film is provided. Further, according to the present disclosure, there is provided a method for manufacturing a temporary fixing laminate and a semiconductor device using such a temporary fixing film.
  • 10 Temporary fixing film, 10A, 10Ac ... Temporary fixing material layer, 12 ... Light absorption layer, 20, 20c ... Temporary fixing laminate, 22 ... Support member, 30 ... Laminate, 40 ... Semiconductor member, 42 ... Semiconductor Substrate, 44 ... rewiring layer, 50 ... sealing layer, 60 ... semiconductor element.

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PCT/JP2021/035169 2020-10-02 2021-09-24 仮固定用フィルム、仮固定用積層体、及び半導体装置の製造方法 Ceased WO2022071150A1 (ja)

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