WO2021208440A1 - 一种晶圆芯片的去边加工方法及其应用的划片机 - Google Patents

一种晶圆芯片的去边加工方法及其应用的划片机 Download PDF

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Publication number
WO2021208440A1
WO2021208440A1 PCT/CN2020/130730 CN2020130730W WO2021208440A1 WO 2021208440 A1 WO2021208440 A1 WO 2021208440A1 CN 2020130730 W CN2020130730 W CN 2020130730W WO 2021208440 A1 WO2021208440 A1 WO 2021208440A1
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Prior art keywords
wafer chip
cutting
wafer
outer edge
edge
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PCT/CN2020/130730
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English (en)
French (fr)
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杨云龙
姜苏
高金龙
于光明
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江苏京创先进电子科技有限公司
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Publication of WO2021208440A1 publication Critical patent/WO2021208440A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

  • the present invention relates to the technical field of cutting and processing of semiconductor wafer chips, in particular to a de-edge processing method of wafer chips, and also relates to a dicing machine to which the de-edge processing method is applied.
  • the traditional cutting method of the dicing machine is to paste a layer of blue film or UV film on the back of the wafer chip, and then use the high-speed grinding wheel blade to cut and subdivide according to the predetermined cutting path on the front of the wafer chip, so that the wafer chip is divided As independent devices or chip particles, however, because the outer circle of the back of the wafer chip has an unfixed edge part relative to the protective film, the edge part is not completely adhered to the blue film or the UV film, which will cause the wafer chip According to the cutting and separation process of the dicing path, the edge part of the outer circle of the wafer chip will appear irregularly moving particle flying material when facing the cutting. The flying material particles will hit the high-speed rotating blade installed on the dicing machine and affect the blade performance. The cutting performance even shatters the blade.
  • the purpose of the present invention is to provide a method for de-edge processing of wafer chips and a dicing machine applied thereto, which creatively determines the circular cutting track according to the outer edge of the back of the wafer chip and uses it as the target cutting track, and finally The cutting tool of the dicing machine is used to de-edge the wafer chip according to the target cutting track, and finally realize the separation of the outer edge of the back side of the wafer chip from the wafer chip.
  • the overall de-edge processing process is convenient and efficient, and when After the finished wafer chip enters the normal dicing and cutting process, the phenomenon of flying materials during the dicing and cutting process is reliably avoided.
  • a method for edge removal processing of a wafer chip wherein the back of the wafer chip is fixedly attached to a protective film through an adhesive layer, and the protective film is laid on a cutting platform of a dicing machine; the cutting platform is fixedly installed on The motor that can rotate forward and backward is used to realize clockwise or counterclockwise rotation, and the outer edge of the backside of the wafer chip and the adhesive layer have an overhang space;
  • the edge removal processing method includes the following operation steps:
  • the vision alignment system of the dicing machine calculates and generates a circular cutting track corresponding to the outer edge ring of the wafer chip based on the point position coordinates;
  • the circular cutting track is used as a target cutting track and aligned with a vision alignment system, and the cutting platform is driven to rotate clockwise or counterclockwise, and the cutting tool of the dicing machine is aligned according to the target cutting track. Edge cutting of the wafer chip;
  • the normal dicing and cutting process is entered to avoid the phenomenon of flying materials during the dicing and cutting process.
  • the visual alignment system of the dicing machine is used to identify and record the position coordinates of at least four circumferentially distributed points of the outer edge ring of the wafer chip, and the center of the circle is The centers of the wafer chips coincide.
  • the range of the suspension space is 2-3 mm; and the cutting tool adopts a blade.
  • the thickness of the blade is in the range of 0.1-0.3 mm.
  • the rotation time is 2-3 minutes.
  • a dicing machine includes a cutting platform fixedly installed on a motor that can rotate forward and backward, a vision alignment system, and a cutting tool located above the cutting platform, the cutting platform is negatively pressured to lay a protective film,
  • the protective film is fixedly attached to the wafer chip through the adhesive layer, and the outer edge of the backside of the wafer chip and the adhesive layer have an overhanging distance; the outer edge of the backside of the wafer chip having the overhanging distance from the adhesive layer is defined
  • the dicing machine uses the edge removal processing method as described above to separate the outer edge ring of the wafer chip from the wafer chip.
  • the normal dicing and cutting process is entered to avoid the phenomenon of flying materials during the dicing and cutting process.
  • the protective film is a blue film or a UV film.
  • the cutting platform is connected with a vacuum negative pressure source to achieve a negative pressure laying effect on the protective film.
  • the present invention creatively defines the outer edge of the backside of the wafer chip as the outer edge ring of the wafer chip to be edged, and calculates the outer edge of the wafer chip based on the point position coordinates of the outer edge ring of the wafer chip through the visual alignment system of the dicing machine.
  • the circular cutting track corresponding to the edge ring is used as the target cutting track.
  • the cutting tool of the dicing machine is used to de-edge the wafer chip according to the target cutting track, and finally realize the backside of the wafer chip.
  • the outer edge is separated from the wafer chip, the overall trimming process is convenient and efficient, and when the wafer chip after the trimming process enters the normal dicing and cutting process, it reliably avoids the phenomenon of flying materials during the dicing and cutting process. It eliminates many problems caused by flying materials, and is suitable for large-scale promotion and application in the field of wafer cutting and processing.
  • FIG. 1 is a block diagram of the steps of a method for removing edges of a wafer chip according to a specific embodiment of the present invention
  • Fig. 2 is a schematic diagram of the mounting structure of a wafer chip on a cutting platform in a specific embodiment of the present invention
  • FIG. 3 is a schematic diagram of the structure of the wafer chip after completing step S10) after the identification and recording of the midpoint position coordinate in the specific embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of the working process of the wafer chip performing step S30) in the specific embodiment of the present invention.
  • Fig. 5 is a schematic diagram of the wafer chip completing step S40) in a specific embodiment of the present invention.
  • the embodiment of the invention discloses a method for de-edge processing of a wafer chip.
  • the back of the wafer chip is fixedly attached to a protective film through an adhesive layer, and the protective film is laid on a cutting platform of a dicing machine; the cutting platform is fixedly installed
  • the motor that can be rotated forward and backward is used to realize clockwise or counterclockwise rotation.
  • the outer edge of the back of the wafer chip and the adhesive layer have an overhang space; the edge removal processing method includes the following steps: S10).
  • the outer edge of the backside of the wafer chip with the suspension space is defined as the outer edge ring of the wafer chip to be edged, and at least 2 point position coordinates of the outer edge ring of the wafer chip are identified and recorded by the visual alignment system of the dicing machine; S20), The visual alignment system of the dicing machine calculates and generates the circular cutting track corresponding to the outer edge ring of the wafer chip based on the point position coordinates; S30), the circular cutting track is used as the target cutting track and the visual alignment system is used for alignment, and the cutting platform is driven to proceed.
  • this embodiment proposes a dicing machine, which includes a cutting platform 1 fixedly mounted on a motor that can rotate forward and backward (not shown in the figure, specifically using a known stepping motor).
  • the alignment system (not shown in the figure) and the cutting tool located above the cutting platform 1.
  • the cutting platform 1 is negatively pressured with a protective film 2, and the protective film 2 is fixed and attached to the wafer chip 4 through the adhesive layer 3, and the wafer chip 4
  • the outer edge of the back surface and the adhesive layer 3 have an overhang space distance 4a; the outer edge of the back surface of the wafer chip 4 with an overhang space distance 4a from the adhesive layer 3 is defined as the outer edge ring 4b of the wafer chip to be edged, and the dicing machine is specifically used
  • the edge removal processing method described below in this embodiment separates the outer edge ring 4b of the wafer chip from the wafer chip 4;
  • the cutting tool After the edge removal processing of the wafer chip 4 is completed, enter the normal scribing and cutting process to avoid the phenomenon of flying materials during the scribing and cutting process; specifically, preferably, in this embodiment, the cutting tool adopts a high-speed rotating blade 5;
  • the protective film 2 is a blue film or a UV film or other protective films with similar protective effects;
  • the cutting platform 1 is connected with a vacuum negative pressure source (specifically, a vacuum pump can be used) to realize the negative pressure laying effect on the protective film 2;
  • the range of the suspension distance is usually 2-3mm, and the thickness of the blade 5 used is in the range of 0.1-0.3mm.
  • the parameter specification of the blade 5 is 56*0.1*40, and the model It is SD1000, which can be directly purchased from the market; of course, in other embodiments of this application, the specific value of the suspension distance is not specifically limited;
  • a method for de-edge processing of wafer chips 4 includes the following operation steps:
  • step S10) Define the outer edge of the backside of the wafer chip 4 with an overhanging space 4a from the adhesive layer 3 as the outer edge ring 4b of the wafer chip to be edged, and identify and record the outer edge of the wafer chip through the visual alignment system of the dicing machine At least two point position coordinates of the edge ring 4b; for details, please refer to FIG. 3 further.
  • the 4 of the outer edge ring 4b of the recording wafer chip is identified by the visual alignment system of the dicing machine.
  • the position coordinates of points 61, 62, 63, 64 distributed in a circular shape, and the center of the circle is the coincidence of the center of the wafer chip; in other embodiments, it is possible to choose to identify and record the position coordinates of other points distributed in a circular shape, As long as it can be ensured that the circular cutting track 7 corresponding to the outer edge ring 4b of the wafer chip can be calculated and generated in the subsequent step S20), this embodiment does not specifically limit it;
  • the vision alignment system of the dicing machine calculates and generates a circular cutting track 7 corresponding to the outer edge ring 4b of the wafer chip based on the point position coordinates;
  • step S40 As shown in Figure 5, the outer edge ring 4b of the wafer chip is separated from the wafer chip 4, and the edge removal processing of the wafer chip 4 is completed. There is no overhang space between the adhesive layers 3; this step S40) is specifically implemented when the negative pressure supply is stopped, the protective film 2 is removed from the cutting platform 1, and then the protective film 2 and the upper surface are bonded to the adhesive layer 3 to form The integrated wafer chip 4c that has been trimmed is placed upside down on any horizontal platform, and then the protective film 2 is slowly and manually torn off until the protective film 2 is completed, the outer edge ring 4b of the wafer chip and the The processed wafer chip 4c is freely separated to obtain the edge-removed wafer chip 4c. After the edge-removing processing of the wafer chip 4 is completed, the normal scribing and cutting process can be entered to avoid flying materials during the scribing and cutting process. .
  • the outer edge of the backside of the wafer chip is creatively defined as the outer edge ring 4b of the wafer chip to be edged.
  • the visual alignment system of the dicing machine is used to calculate and generate the crystal based on the point position coordinates of the outer edge ring 4b of the wafer chip.
  • the annular cutting track 7 corresponding to the outer edge ring 4b of the round chip, the annular cutting track 7 is used as the target cutting track, and finally the wafer chip 4 is trimmed and cut according to the target cutting track by the blade 5 of the dicing machine, and finally realized
  • the outer edge 4b of the back side of the wafer chip is separated from the wafer chip 4 to obtain the edge-removed wafer chip 4c.
  • the overall edge-removing process is convenient and efficient, and when the edge-removing process is completed, the wafer chip 4c enters the normal dicing and dicing process. After the process, the phenomenon of flying materials in the dicing and cutting process is reliably avoided, and many problems caused by flying materials are finally eliminated, and it is suitable for large-scale promotion and application in the field of wafer cutting processing.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)

Abstract

一种晶圆芯片的去边加工方法及其应用的划片机，将晶圆芯片（4）背面外缘定义为待去边的晶圆芯片外缘环（4b），通过划片机的视觉对准系统基于晶圆芯片外缘环（4b）的点位置坐标计算生成晶圆芯片外缘环（4b）对应的环形切割轨道，将该环形切割轨道作为目标切割轨道，最后通过划片机的切割工具根据该目标切割轨道对晶圆芯片（4）进行去边切割，最终实现了对晶圆芯片（4）背面外缘从晶圆芯片（4）上分离。整体去边加工过程便捷高效，而且当完成去边加工后的晶圆芯片进入正常划片切割工序后，可靠避免了划片切割工序中发生飞料现象。

Description

一种晶圆芯片的去边加工方法及其应用的划片机 技术领域
本发明涉及半导体晶圆芯片的切割加工技术领域，具体涉及了一种晶圆芯片的去边加工方法，本发明还涉及了该去边加工方法应用的划片机。
背景技术
近年来,晶圆芯片的发展趋势是外径尺寸变大，厚度变薄,晶片制作生产工艺流程也是越来越多元化，对划片机的加工要求也变得越来越高。其中，因为特定涂胶制程工艺中的安装需要，导致了晶圆芯片背部外圆的边缘部分(通常范围在2-3mm)相对蓝膜或者UV膜呈现悬空无固定状态，这会对后续划片机的切割工序产生一些技术问题：
划片机的传统切割方法是在晶圆芯片背面贴一层蓝膜或者UV膜，然后通过高速运转的砂轮刀片按照晶圆芯片的正面预定切割道进行切割细分加工，使得晶圆芯片被分割成独立的器件或芯片颗粒，然而由于因为晶圆芯片背部外圆相对防护膜存在悬空无固定状态的边缘部分，该边缘部分没有完全粘贴在蓝膜或者UV膜上，这会导致在晶圆芯片依据切割道切割分离过程中，晶圆芯片外圆的边缘部分在面对切割时会出现不规则运动的颗粒飞料现象，飞料颗粒会撞击到安装划片机上的高速旋转刀片，影响刀片的切割性能甚至打碎刀片。
因此，本申请人希望寻求技术方案来解决以上技术问题。
发明内容
有鉴于此，本发明的目的在于提供一种晶圆芯片的去边加工方法及其应用的划片机，创造性地根据晶圆芯片背面外缘确定环形切割轨道并将其作为目标切割轨道，最后通过划片机的切割工具根据该目标切割轨道对所述晶圆 芯片进行去边切割，最终实现了对晶圆芯片背面外缘从晶圆芯片上分离，整体去边加工过程便捷高效，而且当完成去边加工后的晶圆芯片进入正常划片切割工序后，可靠避免了划片切割工序中发生飞料现象。
本发明采用的技术方案如下：
一种晶圆芯片的去边加工方法，所述晶圆芯片背面通过粘胶层固定贴合在防护膜上，所述防护膜铺设在划片机的切割平台上；所述切割平台固定安装在可正反向旋转的电机上用于实现顺时针或逆时针旋转，所述晶圆芯片背面外缘与所述粘胶层具有悬空间距；所述去边加工方法包括如下操作步骤：
S10)、将与所述粘胶层具有悬空间距的晶圆芯片背面外缘定义为待去边的晶圆芯片外缘环，通过所述划片机的视觉对准系统识别记录所述晶圆芯片外缘环的至少2个点位置坐标；
S20)、所述划片机的视觉对准系统基于所述点位置坐标计算生成所述晶圆芯片外缘环对应的环形切割轨道；
S30)、将所述环形切割轨道作为目标切割轨道并采用视觉对准系统对准，驱动所述切割平台进行顺时针或逆时针旋转，同时通过划片机的切割工具根据所述目标切割轨道对所述晶圆芯片进行去边切割；
S40)、将所述晶圆芯片外缘环从所述晶圆芯片上分离，完成对晶圆芯片的去边加工，完成去边加工的晶圆芯片背面外缘与所述粘胶层之间没有悬空间距。
优选地，在所述晶圆芯片的去边加工完成后，进入正常划片切割工序，避免划片切割工序中发生飞料现象。
优选地，在所述步骤S10)中，通过所述划片机的视觉对准系统识别记录所述晶圆芯片外缘环的至少4个呈圆周状状分布的点位置坐标，该圆周中心为所述晶圆芯片中心重合。
优选地，所述悬空间距范围为2-3mm；所述切割工具采用刀片。
优选地，所述刀片的厚度范围为0.1-0.3mm。
优选地，在所述步骤S30)中，当所述切割平台完成360゜周向旋转时，旋转时间为2-3分钟。
优选地，一种划片机，包括固定安装在可正反向旋转的电机上的切割平台、视觉对准系统和位于切割平台上方的切割工具，所述切割平台负压铺设防护膜，所述防护膜通过粘胶层固定贴合晶圆芯片，且所述晶圆芯片背面外缘与所述粘胶层具有悬空间距；将与所述粘胶层具有悬空间距的晶圆芯片背面外缘定义为待去边的晶圆芯片外缘环，所述划片机采用如上所述的去边加工方法将所述晶圆芯片外缘环从所述晶圆芯片上分离。
优选地，在所述晶圆芯片的去边加工完成后，进入正常划片切割工序，避免划片切割工序中发生飞料现象。
优选地，所述防护膜为蓝膜或者UV膜。
优选地，所述切割平台与真空负压源连接实现对所述防护膜的负压铺设效果。
本发明创造性地将晶圆芯片背面外缘定义为待去边的晶圆芯片外缘环，通过划片机的视觉对准系统基于晶圆芯片外缘环的点位置坐标计算生成晶圆芯片外缘环对应的环形切割轨道，将该环形切割轨道作为目标切割轨道，最后通过划片机的切割工具根据该目标切割轨道对所述晶圆芯片进行去边切割，最终实现了对晶圆芯片背面外缘从晶圆芯片上分离，整体去边加工过程便捷高效，而且当完成去边加工后的晶圆芯片进入正常划片切割工序后，可靠避免了划片切割工序中发生飞料现象，最终杜绝了由于飞料产生的诸多问题，适合在晶圆片切割加工领域中进行规模推广应用。
附图说明
附图1是本发明具体实施方式下晶圆芯片的去边加工方法的步骤框图；
附图2是本发明具体实施方式下晶圆芯片在切割平台上的安装结构示意图；
附图3是本发明具体实施方式下晶圆芯片完成步骤S10)中点位置坐标识别记录后的结构示意图；
附图4是本发明具体实施方式下晶圆芯片进行步骤S30)的工作过程结构示意图；
附图5是本发明具体实施方式下晶圆芯片完成步骤S40)的示意图。
具体实施方式
本发明实施例公开了一种晶圆芯片的去边加工方法，晶圆芯片背面通过粘胶层固定贴合在防护膜上，防护膜铺设在划片机的切割平台上；切割平台固定安装在可正反向旋转的电机上用于实现顺时针或逆时针旋转，晶圆芯片背面外缘与粘胶层具有悬空间距；去边加工方法包括如下操作步骤：S10)、将与粘胶层具有悬空间距的晶圆芯片背面外缘定义为待去边的晶圆芯片外缘环，通过划片机的视觉对准系统识别记录晶圆芯片外缘环的至少2个点位置坐标；S20)、划片机的视觉对准系统基于点位置坐标计算生成晶圆芯片外缘环对应的环形切割轨道；S30)、将环形切割轨道作为目标切割轨道并采用视觉对准系统对准，驱动切割平台进行顺时针或逆时针旋转，同时通过划片机的切割工具根据目标切割轨道对晶圆芯片进行去边切割；S40)、将晶圆芯片外缘环从晶圆芯片上分离，完成对晶圆芯片的去边加工，完成去边加工的晶圆芯片背面外缘与粘胶层之间没有悬空间距。
为了使本技术领域的人员更好地理解本发明中的技术方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前 提下所获得的所有其他实施例，都应当属于本发明保护的范围。
请参见图2所示，本实施例提出了一种划片机，包括固定安装在可正反向旋转的电机(图未示出，具体采用公知的步进电机)上的切割平台1、视觉对准系统(图未示出)和位于切割平台1上方的切割工具，切割平台1负压铺设防护膜2，防护膜2通过粘胶层3固定贴合晶圆芯片4，且晶圆芯片4背面外缘与粘胶层3具有悬空间距4a；将与粘胶层3具有悬空间距4a的晶圆芯片4背面外缘定义为待去边的晶圆芯片外缘环4b，划片机具体采用本实施例下述的去边加工方法将晶圆芯片外缘环4b从晶圆芯片4上分离；
在晶圆芯片4的去边加工完成后，进入正常划片切割工序，避免划片切割工序中发生飞料现象；具体优选地，在本实施方式中，切割工具采用可高速旋转的刀片5；防护膜2为蓝膜或者UV膜或其他具有类似防护效果的防护膜；切割平台1与真空负压源(具体可采用真空泵)连接实现对防护膜2的负压铺设效果；
优选地，在本实施方式中，悬空间距的范围通常为2-3mm，所采用的刀片5的厚度范围为0.1-0.3mm，具体优选地，刀片5的参数规格为56*0.1*40，型号为SD1000，可以直接从市场上采购得到；当然地，在本申请其他实施方式中，对悬空间距的具体数值不做具体特别限定；
请参见图1并结合图2所示，一种晶圆芯片4的去边加工方法，包括如下操作步骤：
S10)、将与粘胶层3具有悬空间距4a的晶圆芯片4背面外缘定义为待去边的晶圆芯片外缘环4b，通过划片机的视觉对准系统识别记录晶圆芯片外缘环4b的至少2个点位置坐标；具体优选地，请进一步参见图3所示，在本步骤S10)中，通过划片机的视觉对准系统识别记录晶圆芯片外缘环4b的4个呈圆周状状分布的点位置坐标61、62、63、64，该圆周中心为晶圆芯片中心重合；在其他实施方式中，可以选择识别记录其他数量呈圆周状状分布的点位 置坐标，只要能确保在后续步骤S20)中能计算生成晶圆芯片外缘环4b对应的环形切割轨道7即可，本实施例对其不做特别限定；
S20)、划片机的视觉对准系统基于点位置坐标计算生成晶圆芯片外缘环4b对应的环形切割轨道7；
S30)、请参见图4所示，将环形切割轨道7作为目标切割轨道并采用视觉对准系统对准，通过电机驱动切割平台1进行顺时针旋转，同时通过划片机的刀片5根据目标切割轨道对晶圆芯片4进行去边切割；优选地，在本步骤S30)中，当切割平台1完成360゜周向旋转时，旋转时间为2-3分钟，进一步利于对晶圆芯片4的去边切割效果；当然地，在其他实施方式中，也可以通过电机驱动切割平台1进行逆时针旋转，同样可以获得与顺时针旋转的去边切割效果；
S40)、请参见图5所示，将晶圆芯片外缘环4b从晶圆芯片4上分离，完成对晶圆芯片4的去边加工，完成去边加工的晶圆芯片4c背面外缘与粘胶层3之间没有悬空间距；本步骤S40)具体在实施时，停止负压供应，从切割平台1上取下防护膜2，然后把防护膜2以及上面与粘胶层3贴合为一体且完成去边加工的晶圆芯片4c一起倒置放在任一水平平台面上，然后慢慢手动撕掉防护膜2，直至防护膜2全部斯完完毕后，晶圆芯片外缘环4b和去边加工的晶圆芯片4c自由分离，得到去边加工的晶圆芯片4c，在晶圆芯片4的去边加工完成后即可进入正常划片切割工序，避免划片切割工序中发生飞料现象。
本实施例创造性地将晶圆芯片背面外缘定义为待去边的晶圆芯片外缘环4b，通过划片机的视觉对准系统基于晶圆芯片外缘环4b的点位置坐标计算生成晶圆芯片外缘环4b对应的环形切割轨道7，将该环形切割轨道7作为目标切割轨道，最后通过划片机的刀片5根据该目标切割轨道对晶圆芯片4进行去边切割，最终实现了对晶圆芯片背面外缘4b从晶圆芯片4上分离得到去边加工的晶圆芯片4c，整体去边加工过程便捷高效，而且当完成去边加工后的晶圆芯 片4c进入正常划片切割工序后，可靠避免了划片切割工序中发生飞料现象，最终杜绝了由于飞料产生的诸多问题，适合在晶圆片切割加工领域中进行规模推广应用。
对于本领域技术人员而言，显然本发明不限于上述示范性实施例的细节，而且在不背离本发明的精神或基本特征的情况下，能够以其他的具体形式实现本发明。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本发明的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。
此外，应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施例中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。

Claims (10)

  1. 一种晶圆芯片的去边加工方法，所述晶圆芯片背面通过粘胶层固定贴合在防护膜上，所述防护膜铺设在划片机的切割平台上；所述切割平台固定安装在可正反向旋转的电机上用于实现顺时针或逆时针旋转，所述晶圆芯片背面外缘与所述粘胶层具有悬空间距；其特征在于，所述去边加工方法包括如下操作步骤：
    S10)、将与所述粘胶层具有悬空间距的晶圆芯片背面外缘定义为待去边的晶圆芯片外缘环，通过所述划片机的视觉对准系统识别记录所述晶圆芯片外缘环的至少2个点位置坐标；
    S20)、所述划片机的视觉对准系统基于所述点位置坐标计算生成所述晶圆芯片外缘环对应的环形切割轨道；
    S30)、将所述环形切割轨道作为目标切割轨道并采用视觉对准系统对准，驱动所述切割平台进行顺时针或逆时针旋转，同时通过划片机的切割工具根据所述目标切割轨道对所述晶圆芯片进行去边切割；
    S40)、将所述晶圆芯片外缘环从所述晶圆芯片上分离，完成对晶圆芯片的去边加工，完成去边加工的晶圆芯片背面外缘与所述粘胶层之间没有悬空间距。
  2. 根据权利要求1所述的晶圆芯片的去边加工方法，其特征在于，在所述晶圆芯片的去边加工完成后，进入正常划片切割工序，避免划片切割工序中发生飞料现象。
  3. 根据权利要求1所述的晶圆芯片的去边加工方法，其特征在于，在所述步骤S10)中，通过所述划片机的视觉对准系统识别记录所述晶圆芯片外缘环的至少4个呈圆周状状分布的点位置坐标，该圆周中心为所述晶圆芯片中心重合。
  4. 根据权利要求1所述的晶圆芯片的去边加工方法，其特征在于，所述悬空间距范围为2-3mm；所述切割工具采用刀片。
  5. 根据权利要求4所述的晶圆芯片的去边加工方法，其特征在于，所述刀片的厚度范围为0.1-0.3mm。
  6. 根据权利要求1所述的晶圆芯片的去边加工方法，其特征在于，在所述步骤S30)中，当所述切割平台完成360゜周向旋转时，旋转时间为2-3分钟。
  7. 一种划片机，包括固定安装在可正反向旋转的电机上的切割平台、视觉对准系统和位于切割平台上方的切割工具，所述切割平台负压铺设防护膜，所述防护膜通过粘胶层固定贴合晶圆芯片，且所述晶圆芯片背面外缘与所述粘胶层具有悬空间距；其特征在于，将与所述粘胶层具有悬空间距的晶圆芯片背面外缘定义为待去边的晶圆芯片外缘环，所述划片机采用如权利要求1-6之一所述的去边加工方法将所述晶圆芯片外缘环从所述晶圆芯片上分离。
  8. 根据权利要求7所述的划片机，其特征在于，在所述晶圆芯片的去边加工完成后，进入正常划片切割工序，避免划片切割工序中发生飞料现象。
  9. 根据权利要求7所述的划片机，其特征在于，所述防护膜为蓝膜或者UV膜。
  10. 根据权利要求7所述的划片机，其特征在于，所述切割平台与真空负压源连接实现对所述防护膜的负压铺设效果。
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