WO2021206148A1 - セラミックス、プローブ案内部品、プローブカードおよびパッケージ検査用ソケット - Google Patents
セラミックス、プローブ案内部品、プローブカードおよびパッケージ検査用ソケット Download PDFInfo
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- WO2021206148A1 WO2021206148A1 PCT/JP2021/014925 JP2021014925W WO2021206148A1 WO 2021206148 A1 WO2021206148 A1 WO 2021206148A1 JP 2021014925 W JP2021014925 W JP 2021014925W WO 2021206148 A1 WO2021206148 A1 WO 2021206148A1
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- 239000000919 ceramic Substances 0.000 title claims abstract description 73
- 239000000523 sample Substances 0.000 title claims description 82
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- 238000007689 inspection Methods 0.000 claims description 21
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 14
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 14
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 229910015621 MoO Inorganic materials 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 8
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 6
- 238000013001 point bending Methods 0.000 claims description 2
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- 238000012545 processing Methods 0.000 abstract description 43
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 abstract 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- 229910000424 chromium(II) oxide Inorganic materials 0.000 abstract 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 abstract 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 abstract 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 1
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- 239000000843 powder Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
質量%で、
Si3N4:20.0~60.0%と、
ZrO2:25.0~70.0%と、
SiCおよびAlNから選択される1種類以上:2.0~17.0%(ただし、AlNは10.0%以下)と、
MgO、Y2O3、CeO2、CaO、HfO2、TiO2、Al2O3、SiO2、MoO3、CrO、CoO、ZnO、Ga2O3、Ta2O5、NiOおよびV2O5から選択される1種類以上:5.0~15.0%とを含有し、
下記(1)式から求められるFnが0.02~0.40である、
セラミックス。
Fn=(SiC+3AlN)/(Si3N4+ZrO2)・・・(1)
本発明に係るセラミックスは、質量%で、Si3N4:20.0~60.0%と、ZrO2:25.0~70.0%と、SiCおよびAlNから選択される1種類以上:2.0~17.0%(ただし、AlNは10.0%以下)と、MgO、Y2O3、CeO2、CaO、HfO2、TiO2、Al2O3、SiO2、MoO3、CrO、CoO、ZnO、Ga2O3、Ta2O5、NiOおよびV2O5から選択される1種類以上:5.0~15.0%とを含有し、下記(1)式から求められるFnが0.02~0.40である、セラミックスである。以下、含有量についての「%」は「質量%」を意味する。
Fn=(SiC+3AlN)/(Si3N4+ZrO2)・・・(1)
Si3N4は、セラミックスに高い強度を付与するのに有効であり、700MPa以上という高い曲げ強度を得るためには、20.0%以上含有させる必要がある。しかし、Si3N4の含有量が60.0%を超えると、シリコンウエハと同程度の熱膨張率を得ること、すなわち、-50~500℃における熱膨張係数を3.0×10-6/℃に以上することが困難となる。よって、Si3N4の含有量は、20.0~60.0%とする。下限は25.0%とするのが好ましく、30.0%とするのがより好ましい。上限は、55.0%とするのが好ましく、50.0%とするのがより好ましい。
ZrO2は、セラミックスに高い熱膨張率を付与するのに有効であり、25.0%以上含有させる必要がある。しかし、ZrO2の含有量が70.0%を超えると、熱膨張率が高くなりすぎて、シリコンウエハと同程度の熱膨張率を得ること、すなわち、-50~500℃における熱膨張係数を6.0×10-6/℃以下にすることが困難となる。よって、ZrO2の含有量は、25.0~70.0%とする。下限は30.0%とするのが好ましく、35.0%とするのがより好ましい。上限は、65.0%とするのが好ましく、60.0%とするのがより好ましい。
Fn=(SiC+3AlN)/(Si3N4+ZrO2):0.02~0.40
上記の通り、ZrO2は、セラミックスに高い熱膨張率を付与するのに有効であるものの、Si3N4およびZrO2はいずれも熱伝導率が低いため、レーザによる加工速度を低下させる。セラミックスの精密加工には、非熱加工法であるパルスレーザ加工が用いられる。パルスレーザ加工は、セラミックスを溶融させずに加工する方法であるが、レーザ照射位置に近い部位では加工時の熱の影響を受けて加熱された熱影響領域が存在する。加工によって設ける貫通孔のサイズが小さくなるほど、貫通孔の径に対するレーザ径が大きくなり、相対的に熱影響領域が大きくなって形状不良、除去物の再付着などの不具合が発生しやすくなる。このため、熱伝導率が低いセラミックスを形状不良が発生しないように加工するためには、レーザ出力(W)、走査軌跡(レーザの動き、走行距離)、走査速度、繰返し周波数(パルスレーザの照射の時間的間隔)などを調整する必要がある。例えば、繰り返し周波数は小さくすれば、セラミックスの温度上昇を抑えることができるが、反面加工に要する時間が長くなる。その結果、レーザによる加工速度が低下するのである。
本発明に係るセラミックスを様々な用途に用いる場合には、微細な加工を行う必要がある。例えば、プローブ案内部品として使用するためには、複数の貫通孔および/またはスリットを形成する必要がある。しかし、本発明に係るセラミックスは、Si3N4およびZrO2を主成分とする高硬度材料であるので、この微細加工を機械的加工で行うことは困難である。このため、加工表面(例えば、プローブガイドの貫通孔内表面)が粗くなり、そのような加工を施した部材の使用時に、パーティクルが発生し、各種デバイスへのダメージや検査不良を招く。このため、このセラミックスへの微細な加工は、レーザ加工により行うのが好ましいが、レーザ加工によっても、加工表面(例えば、プローブガイドの貫通孔内表面)を滑らかにすることが困難であり、使用時のパーティクルの発生を完全に防止することは困難である。
本発明に係るセラミックスをプローブガイドに用いる場合には、各ICチップが搭載されるシリコンウエハの熱膨張係数と同程度であることが求められる。これは、検査時の温度が変化したときに、シリコンウエハの熱膨張に従ってICチップの位置が変動する。このとき、プローブガイドが、シリコンウエハと同程度の熱膨張係数を有しておれば、シリコンウエハの膨張、収縮に同調して移動するので、高精度な検査を維持することができる。この点、本発明に係るセラミックスが検査用ソケットに用いられる場合も同様である。よって、-50~500℃における熱膨張係数は、3.0~6.0×10-6/℃であることを基準とする。
本発明に係るセラミックスは、プローブガイドに使用したときには、検査時にプローブなどとの接触や荷重に耐えうるように、十分な機械的特性を有していることが求められる。特に、プローブガイドの小型化、薄肉化の要請に答えるべく、従来にも増して高い曲げ強度が求められる。この点、本発明に係るセラミックスが検査用ソケットに用いられる場合も同様である。このため、曲げ強度は、600MPa以上であることを基準とし、より好ましくは700MPa以上とする。
微細加工性は、パルスレーザ加工によって、厚み0.3mmのセラミックス材料に50μm角または30μm角の貫通孔を9個形成したときの加工精度により評価する。
具体的には、光学顕微鏡(例えば(株)キーエンス製VHX7000)で撮影した画像について、画像測定機(例えば(株)ミツトヨ製クイックビジョン)で観察することにより評価する。微細加工性が良好であるとは、レーザの抜け側から穴形状を観察し、加工性精度が±2μm以下(50μm角の貫通孔では一辺の長さが48~52μm、30μm角の貫通孔では一片の長さ28~32μm)であり、かつ、それぞれの角穴の隅Rについて、任意の3点から円計測したRが5um以下である場合を意味する。
加工表面の粗さは、パルスレーザ加工によって、厚み0.3mmのセラミックス材料に50μm角の貫通孔を9個形成したときの加工穴内面を、レーザ共焦点顕微鏡(キーエンス製VK-X150)で、任意の5視野を、長さ100μm以上を測定し、傾き補正を行ってRaを算出し、その平均値を評価する。Raは、0.25μm以下を良好とする。
150℃熱処理後のクラック発生有無は、厚み0.3mmのセラミックス材料を、5℃/分で室温から150℃まで昇温し、150℃で100時間保持したのち、室温で自然放冷して、セラミックスが室温に達してからさらに5時間静置した後、デジタルマイクロスコープ(キーエンス製VHX-6000)を用いて、観察倍率200倍で5視野以上を撮影し、撮影画像からクラックの発生有無を評価する。
以下、本発明に係るセラミックスの製造方法の例について説明する。
上記試験材の-50~500℃における熱膨張係数をJIS R1618に従って求めた。-50~500℃における熱膨張係数は、3.0~6.0×10-6/℃であることを基準とする。
上記の試験材の三点曲げ強度をJIS R1601に従って求めた。曲げ強度は、600MPa以上であることを基準とする。
上記の試験材の嵩密度をJIS C2141に従って求め、求めた嵩密度を理論密度で除して相対密度を求めた。相対密度は、95%以上であることを基準とする。
上記の試験材のヤング率をJIS R1602に従って求めた。ヤング率は、240GPa以上であることを基準とする。
微細加工性は、パルスレーザ加工によって、厚み0.3mmのセラミックス材料に50μm角および30μm角の貫通孔を9個形成したときの加工精度により評価する。具体的には、光学顕微鏡(例えば(株)キーエンス製VHX7000)で撮影した画像について、画像測定機(例えば(株)ミツトヨ製クイックビジョン)で観察することにより評価する。50μm角の貫通孔の加工には波長1064nmのパルスレーザを、30μm角の貫通孔の加工には波長532nmのパルスレーザをそれぞれ用いた。微細加工性が良好であるとは、レーザの抜け側から穴形状を観察し、加工性精度が±2μm以下であり、それぞれの角穴の隅Rについて、任意の3点から円計測したRが5um以下であり、かつ付着物がない場合を意味する。微細加工性が良好である場合を「○」、それ以外の場合(材料の残りがあった場合、形状歪があった場合など)を「×」とする。なお、図4は、レーザ加工時の状態の概略図を示している。図4に示すように、セラミックスにおいて、レーザ光を照射する側をレーザ照射側とし、レーザ照射側の反対側をレーザ抜け側とする。
加工速度は、上記9個の貫通孔を形成開始から終了までの時間を測定し、評価対象であるセラミックスの加工時間(t1)と、基準組成のセラミックスにおける加工時間(t0)との比(t1/t0)を求めて評価する。比(t1/t0)が1.05以上である場合を良好とする。1.10以上、さらには、1.15以上である場合には、さらに加工速度が良好であると評価する。なお、基準組成とは、評価対象であるセラミックスから、Si3N4とZrO2との比が一定の条件で、SiCおよびAlNを除いた組成を有するセラミックスを意味する。
加工表面の粗さは、パルスレーザ加工によって、厚み0.3mmのセラミックス材料に50μm角の貫通孔を9個形成したときの加工穴内面を、レーザ共焦点顕微鏡(キーエンス製VK-X150)で、任意の5視野を、長さ100μm以上を測定し、傾き補正を行ってRaを算出し、その平均値を評価した。Raは、0.25μm以下を良好とした。なお、加工表面の粗さは、セラミックス材料の厚さ方向に平行な断面について、穴内面の厚さ中心部を含む領域(具体的には、図8の長方形で囲った部分)を観察する。
150℃熱処理後のクラック発生有無は、厚み0.3mmのセラミックス材料を、5℃/分で室温から150℃まで昇温し、150℃で100時間保持したのち、室温で自然放冷して、セラミックスが室温に達してからさらに5時間静置した後、デジタルマイクロスコープ(キーエンス製VHX-6000)を用いて、観察倍率200倍で5視野以上を撮影し、撮影画像からクラックの発生有無を評価する。クラックの発生がない場合○、クラックの発生がある場合を×とする。
Claims (11)
- 質量%で、
Si3N4:20.0~60.0%と、
ZrO2:25.0~70.0%と、
SiCおよびAlNから選択される1種類以上:2.0~17.0%(ただし、AlNは10.0%以下)と、
MgO、Y2O3、CeO2、CaO、HfO2、TiO2、Al2O3、SiO2、MoO3、CrO、CoO、ZnO、Ga2O3、Ta2O5、NiOおよびV2O5から選択される1種類以上:5.0~15.0%とを含有し、
下記(1)式から求められるFnが0.02~0.40である、
セラミックス。
Fn=(SiC+3AlN)/(Si3N4+ZrO2)・・・(1) - 質量%で、
MgO、Y2O3、CeO2、CaOおよびHfO2から選択される1種類以上と、
TiO2、Al2O3、SiO2、MoO3、CrO、CoO、ZnO、Ga2O3、Ta2O5、NiOおよびV2O5から選択される1種類以上とを含有する、
請求項1に記載のセラミックス。 - ZrO2の結晶相が、正方晶であるか、正方晶および単斜晶であるか、立方晶であるか、立方晶および正方晶であるか、立方晶および単斜晶である、
請求項1または2に記載のセラミックス。 - ZrO2が立方晶である、
請求項1から3までのいずれかに記載のセラミックス。 - -50~500℃における熱膨張係数が3.0~6.0×10-6/℃であり、かつ3点曲げ強度が600MPa以上である、
請求項1から4までのいずれかに記載のセラミックス。 - プローブカードのプローブを案内するプローブ案内部品であって、
請求項1から5までのいずれかに記載のセラミックスを用いた板状の本体部と、
前記本体部に、前記プローブを導通する複数の貫通孔および/またはスリットとを備える、
プローブ案内部品。 - 前記複数の貫通孔内面および前記スリット内面の表面粗さが、Raで0.25μm以下である、
請求項6に記載のプローブ案内部品。 - 前記貫通孔および/または前記スリットの内接円の直径が100μm以下である、
請求項6または7に記載のプローブ案内部品。 - 前記貫通孔および/または前記スリットの深さDと内接円の直径Hとの比(D/H)が、6.0以上である、
請求項6から8までのいずれかに記載のプローブ案内部品。 - 複数のプローブと、
請求項6から9までのいずれかに記載のプローブ案内部品とを備える、
プローブカード。 - 請求項1から5までのいずれかに記載のセラミックスを用いた、
パッケージ検査用ソケット。
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