TW202212290A - 陶瓷、探針導引零件、探針卡及封裝體檢查用插座 - Google Patents

陶瓷、探針導引零件、探針卡及封裝體檢查用插座 Download PDF

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TW202212290A
TW202212290A TW110112856A TW110112856A TW202212290A TW 202212290 A TW202212290 A TW 202212290A TW 110112856 A TW110112856 A TW 110112856A TW 110112856 A TW110112856 A TW 110112856A TW 202212290 A TW202212290 A TW 202212290A
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ceramic
probe
zro
probe guide
hole
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TW110112856A
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TWI773238B (zh
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山岸航
森一政
衛藤俊一
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日商飛羅得材料科技股份有限公司
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Abstract

一種陶瓷，其以質量%計，含有 Si 3N 4：20.0~60.0%、 ZrO 2：25.0~70.0%、 自SiC及AlN選擇之1種以上：2.0~17.0%(但，AlN為10.0%以下)、及 自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上：5.0~15.0%， 且由下述(1)式求出之Fn為0.02~0.40。 該陶瓷係可高效率地雷射加工。

Description

陶瓷、探針導引零件、探針卡及封裝體檢查用插座
本發明有關陶瓷、探針導引零件、探針卡及封裝體檢查用插座。
例如，IC晶片之檢查步驟中，使用探針卡。圖1顯示例示探針卡之構成之剖面圖，圖2顯示例示探針導件構成之俯視圖。如圖1所示，探針卡10係具備針狀之探針11與具有用以使各探針11導通之複數貫通孔12a之探針導件(探針導引零件)12之檢查治具。而且，IC晶片14之檢查係藉由使複數探針11接觸於矽晶圓13上形成之IC晶片14而進行。
專利文獻1中例示以氮化矽25~60質量%與氮化硼40~75質量%之混合物為主原料之陶瓷。又專利文獻2揭示有關以主成分為碳化硼30~50質量%及氧化鋯50~70質量%所成為特徵之快削性陶瓷之發明。
隨著近年之裝置細微化及高性能化，對於其檢查裝置所用之探針導件，要求具有與矽晶圓13相同程度之熱膨脹率、具有可耐受探針荷重之機械強度(彎曲強度)、可高精度地加工多數供微小探針通過之孔。
例如，IC晶片之檢查步驟之檢查效率依存於可同時接觸IC晶片之探針數。因此，近年來因MEMS (Mirco Electro Mechanical Systems，微機電系統)，而高密度地立設數萬根微小探針之探針卡已實用化。如前揭圖2所示，於探針導件12，必須於與探針卡10之各探針11對應之位置設置貫通孔12a。探針卡10之探針11之設置位置及形狀等，根據其檢查裝置之規格而為多樣，對應於此，貫通孔12a之設置位置及形狀等亦為多樣。例如，探針11為針形狀之情況，雖採用圓形孔作為貫通孔12a，但必須根據探針11之形狀，形成各種形狀之貫通孔12a。
孔之內徑及孔之節距亦因探針11種類及配置而定，例如有以60μm節距(貫通孔間之壁厚約10μm)設置直徑50μm之圓形貫通孔或50μm見方之貫通孔。且必須設置數萬個此等小貫通孔。因此要求易於精密加工之材料。尤其，於探針卡12之貫通孔12a接觸於探針11之情況若產生微粒則有引起對裝置之損傷及檢查不良、探針卡10之保養次數增加之情況。藉此，亦要求探針卡12之貫通孔12a內表面之粗糙度較小，亦即要求加工表面平滑。
於此，隨著IC晶片之配線微細化，亦要求探針數增加及使探針接觸之焊墊間距離(節距)變窄，同時要求探針之位置精度之進一步提升。為了對應該窄節距，而進展探針之小型化，且開始使用各種形狀之探針。另一方面，關於探針導件所用之材料、以探針位置精度提高為目的，亦產生減低厚度、對應於探針形狀變化之微細孔形成等之必要。
然而，若減低探針導件用材料之厚度則零件之強度降低，將無法耐受探針荷重而變形，其結果，探針之位置精度降低。又，依情況有探針導件用材料破損之情況。為了對應於該等要求，對探針導件要求具有極優異之機械特性。
以上主要針對探針導件加以說明，但作為要求同樣性能之用途，有封裝檢查用插座等之檢查用插座。
專利文獻1及專利文獻2之陶瓷，無法獲得充分機械強度(具體來說為600MPa以上之彎曲強度)。
又，本發明人等於專利文獻3中為了使藉由雷射加工形成之加工表面(例如探針導件之貫通孔內表面)光滑，而提案對高強度陶瓷之Si 3N 4，複合高膨脹陶瓷之ZrO 2及特定氧化物(自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之一種以上)之具有與矽晶圓相同程度之熱膨脹率且高強度之陶瓷。 [先前技術文獻] [專利文獻]
[專利文獻1] 日本特開2001-354480號公報 [專利文獻2] 日本特開2003-286076號公報 [專利文獻3] 國際公開第2019/093370號 [非專利文獻]
[非專利文獻1] 吉田武司等、關於於YAG雷射照射之陶瓷加工特性、生產及加工之學術演講會2001、第3次生產加工･工作機械部門後援會、日本機械學會、2001年11月21日。
[發明欲解決之課題]
專利文獻3之發明係針對對於Si 3N 4複合ZrO 2之陶瓷材料實施雷射加工之情況進行檢討，為了使藉由雷射加工形成之加工表面(例如，探針導件之貫通孔內表面)光滑，使適量含有MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5等之氧化物。然而，未提及加工速度。
此處，如非專利文獻1之記載，例如於照射YAG雷射進行穿孔加工時，一般已知ZrO 2單體之陶瓷，相較於Si 3N 4單體之陶瓷更容易加工(參考非專利文獻1)。於非專利文獻1，作為理由係說明熱傳導率愈大之陶瓷需要愈大之照射能量。
然而，根據本發明人等之研究，對於Si 3N 4中散佈ZrO 2之陶瓷進行雷射加工時，具有ZrO 2存在之部分加工不易，未存在之部分加工容易之傾向，並產生加工速度差，其結果，判知加工速度極端降低。該點，即使含有特定氧化物(自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之一種以上)亦相同。
本發明之目的係提供與矽相同之熱膨脹係數、優異的機械強度及加工性(高精度之細密加工、優異的加工表面性狀、粒子之發生抑制)及可高效率雷射加工之陶瓷、使用該陶瓷之探針導引零件、探針卡及檢查用插座。 [用以解決課題之手段]
本發明人等為了達成上述目的，以針對對Si 3N 4複合ZrO 2及特定氧化物之陶瓷的加工速度提高為目的而重複積極研究。
對上述之複合陶瓷進行雷射加工時，針對ZrO 2存在之部分加工不易，未存在之部分加工容易之原因重複檢討之結果，與通常之見解相反，認為ZrO 2係雷射反射率高、降低雷射吸收率者。因此，本發明人等針對使上述複合陶瓷之雷射反射率降低之化合物重複積極檢討，發現藉由根據Si 3N 4及ZrO 2之量而存在適量之SiC及AlN，可不使基本性能(與矽相同程度之熱膨脹係數、優異的機械強度及加工性)降低，且可提高雷射之加工速度。
本發明係基於上述見解而完成者，以下述發明為要旨。 一種陶瓷，其以質量%計，含有： Si 3N 4：20.0~60.0%、 ZrO 2：25.0~70.0%、 自SiC及AlN選擇之1種以上：2.0~17.0%(但，AlN為10.0%以下)及、 自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上：5.0~15.0%， 且由下述(1)式求出之Fn為0.02~0.40，
Figure 02_image001
。 [發明效果]
依據本發明，因可獲得與矽同程度之熱膨脹係數、優異的機械強度及加工性(高精度的細密加工、優異的表面性狀、抑制微粒發生)及可高效率地雷射加工之陶瓷，故作為探針導引零件、探針卡及檢查用插座尤其有用。
1. 陶瓷
本發明之陶瓷係以質量%計，含有Si 3N 4：20.0~60.0%、ZrO 2：25.0~70.0%、自SiC及AlN選擇之1種以上：2.0~17.0%(但，AlN為10.0%以下)及自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上：5.0~15.0%，且由下述(1)式求出之Fn為0.02~0.40之陶瓷。以下，關於含量之「%」意指「質量%」。
Figure 02_image003
。
Si 3N 4：20.0~60.0% Si 3N 4係有效對陶瓷賦予高強度者，為了獲得700MPa以上之高彎曲強度，必須含有20.0%以上。然而，Si 3N 4含量若超過60.0%，則難以獲得與矽晶圓相同程度之熱膨脹率，亦即於-50~500℃之熱膨脹係數為3.0×10 -6/℃。因此，Si 3N 4含量設為20.0~60.0%。下限較佳為25.0%，更佳為30.0%。上限較佳為55.0%，更加為50.0%。
ZrO 2：25.0~70.0% ZrO 2係有效對陶瓷賦予高熱膨脹率者，必須含有25.0%以上。然而，若ZrO 2含量超過70.0%，則熱膨脹率變得過高，難以獲得與矽晶圓相同程度之熱膨脹率，亦即於-50~500℃之熱膨脹係數為6.0×10 -6/℃以下。因此，ZrO 2含量設為25.0~70.0%。下限較佳為30.0%，更佳為35.0%。上限較佳為65.0%，更佳為60.0%。
且，作為ZrO 2有具有單斜晶、正方晶或立方晶之結晶構造者。單斜晶ZrO 2因強度低於正方晶或立方晶ZrO 2，故即使包含單斜晶作為結晶構造之情況，亦較佳相對於ZrO 2全體單結晶ZrO 2之比率極度小。單斜晶之比率若過大，因難以達成600MPa之彎曲強度，故相對於ZrO 2全體之單斜晶比率，較佳為10%以下，更佳為5%以下，亦可為0%。又，一般為了對ZrO 2陶瓷賦予高強度，較佳為使用固熔有數%氧化物之正方晶ZrO 2。然而，該正方晶ZrO 2即使於低溫(未達200℃)長時間暴露，亦會相轉移為單斜晶，於該相轉移之際會使陶瓷尺寸變化。該相轉移於例如40℃以上進行，於150℃以上更顯著進行。然而，此等陶瓷使用於導引探針卡之探針的探針導引零件之情況，於室溫雖能發揮作為探針導引零件之功能，但伴隨使用溫度域變高，供探針通過之複數貫通孔及/或狹縫之位置會偏移，而有阻礙探針導通之情況。因此，較佳使用於使用溫度不會相轉移，亦即無尺寸變化之立方晶ZrO 2。且，於立方晶ZrO 2含有約3莫耳%之Y等之元素，ZrO 2之含量亦包含該等元素之量。
自SiC及AlN選擇之1種以上：2.0~17.0% (但，AlN為10.0%以下)。 Fn=(SiC+3AlN)/(Si 3N 4/ZrO 2)：0.02~0.40 如上述，ZrO 2雖係有效對陶瓷賦予高熱膨脹率者，但因Si 3N 4及ZrO 2熱傳導率均低，故使雷射之加工速度降低。於陶瓷之精密加工中，使用非熱加工法之脈衝雷射加工。脈衝雷射加工係不使陶瓷熔融而加工之方法，但於靠近雷射照射位置之部位會受到加工時之熱的影響而存在經加熱之熱影響區域。藉由加工設置之貫通孔之尺寸愈小，相對於貫通孔直徑，雷射直徑較大，相對地熱影響領域變大而容易發生形狀不良、除去物之再附著等缺陷。因此，為了以不使熱傳導率低的陶瓷發生形狀不良之方式進行加工，必須調整雷射輸出(W)、掃描軌跡(雷射移動、行進距離)、掃瞄速度、重複之頻率(脈衝雷射之照射時間間隔)等。例如，若重複之頻率較小，雖可抑制陶瓷之溫度上升，但相反地加工所需之時間變長。其結果，雷射之加工速度降低。
此處，SiC及AlN，相較於Si 3N及ZrO 2具備極高的熱傳導率。因此，對Si 3N 4複合ZrO 2及特定氧化物之陶瓷中，若含有SiC及AlN之一種以上，則於雷射加工時發生之熱影響區域容易散熱，不會使基本性能(與矽相同之熱膨脹係數、優異的機械強度及加工性)降低，可提高雷射之加工速度。因此，含有2.0%以上之自SiC及AlN選擇之1種以上。又，為了獲得上述效果，(SiC+3AlN)/ (Si 3N 4/ZrO 2)必須為0.02以上。另一方面，若SiC及AlN之量過多，則彎曲強度降低。因此，自SiC及AlN選擇1種以上之含量為17.0%以下(但AlN為10.0%以下)。又，(SiC+3AlN)/(Si 3N 4/ZrO 2)為0.40以下。
此處，SiC及AlN因相較於Si 3N 4及ZrO 2彎曲強度較低，故尤其若該等化合物於燒結體中以粗大粒子存在，則有燒結體之彎曲強度降低之虞。因此，期望該等化合物以平均粒徑5.0μm以下之尺寸均一分散。更期望以平均粒徑2.0μm以下之尺寸均一分散。為了實現此，較佳使用粒度較細之原料粉末，作為原料粉末較佳平均粒徑為3.0μm以下之粉末，更佳為1.0μm以下之粉末。
自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上：5.0~15.0%。 本發明之陶瓷使用於各種用途時，必須進行微細加工。例如為了作為探針導引零件使用，必須形成複數貫通孔及/或狹縫。但是，本發明之陶瓷由於係以Si 3N 4及ZrO 2作為主成分之高硬度材料，故難以藉機械加工進行微細加工。因此，加工表面(例如探針導件之貫通孔內表面)會變粗糙，於實施此等加工之零件之使用時，產生微粒，導致對各種裝置之損傷及檢查不良。因此，對該等陶瓷之微細加工雖較佳藉由雷射加工進行，但即使藉由雷射加工，亦難以使加工表面(例如探針導件之貫通孔內表面)平滑，且難以完全防止使用時之微粒發生。
因此，本發明之陶瓷中，為了使藉由雷射加工而形成之加工表面(例如探針導件之貫通孔內表面)平滑，必須含有適量氧化物。亦即必須含有5.0%以上之自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上。另一方面，因該等氧化物之含量過量之情況將導致彎曲強度降低，故該等氧化物之一種以上的含量設為15.0%以下。如此，自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上之含量設為5.0~15.0%。下限較佳為7.0%，更佳為9.0%。上限較佳為13.0%，更佳為11.0%。
尤其MgO、Y 2O 3、CeO 2、CaO及HfO 2除了上述效果以外，具有作為燒結助劑之作用，進而有效使ZrO 2之結晶構造穩定為立方晶。又，TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5除了上述效果以外，具有作為燒結助劑之作用。因此，較佳為含有自MgO、Y 2O 3、CeO 2、CaO及HfO 2選擇之1種以上與自TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上。
且，各成分之含量(質量%)可藉由ICP發光分光分析法測定。又，於上述舉例之成分以外之其餘部分並未特別限制，但較佳極度少，其餘部分之含量較佳為10.0%以下，更佳為5.0%以下，亦可為0%。作為其餘部分舉例為BN等。尤其，由於BN有導致強度降低之虞，故其含量較佳極度少，其含量較佳為3.0%以下，更佳為1.5%以下。
於-50~500℃之熱膨脹係數：3.0~6.0×10 -6/℃ 本發明之陶瓷使用於探針導引件時，要求與搭載各IC晶片之矽晶圓之熱膨脹係數相同程度。係因為檢查時之溫度變化時，隨著矽晶圓之熱膨脹IC晶片之位置變動。此時，探針導件若具有與矽晶圓相同程度之熱膨脹係數，則因與矽晶圓之膨脹、收縮同步並移動，可維持高精度之檢查。該點於將本發明之陶瓷使用於檢查用插座之情況亦相同。因此，於-50~500℃之熱膨脹係數係以3.0~6.0×10 -6/℃為基準。
彎曲強度：600MPa以上 本發明之陶瓷使用於探針導件時，要求能以耐受檢查時與探針等之接觸及荷重之方式，具有充分的機械特性。尤其為了對應於探針導件之小型化、薄型化之要求，而要求較過去增加之高彎曲強度。此點於將本發明之陶瓷使用於檢查用插座之情況亦相同。因此，彎曲強度係以600MPa以上為基準，更佳為700MPa以上。
微細加工性 微細加工性係藉由脈衝雷射加工，藉由對厚度0.3mm之陶瓷材料形成9個50μm見方或30μm見方之貫通孔時之加工精度進行評價。 具體而言，針對以光學顯微鏡(例如KEYENCE(股)製VHX7000)拍攝之圖像，以圖像測定機(例如MITUTOYO (股)製QUCIK VISION)觀察而評價。微細加工良好，意指自雷射之穿透側觀察孔形狀，加工精度為±2μm以下(於50μm見方之貫通孔係一邊長度為40~52μm，於30μm見方之貫通孔係一邊長度為28~32μm)，且針對各個方孔之角落R，自任意3點圓量測R為5μm以下之情況。
又，加工速度係針對上述9個貫通孔，以可維持上述良好微細加工性之最高速度加工之情況，測定自貫通孔形成開始至結束之時間，求出評價對象的陶瓷之加工時間(t 1)與基準組成的陶瓷之加工時間(t 0)之比(t 1/t 0)予以評價。比(t 1/t 0)為1.05以上時為良好。於1.10以上，進而為1.15以上時，進而評價為加工速度優異。又所謂基準組成意指具有自評價對象之陶瓷，以使Si 3N 4及ZrO 2之比為一定之條件，將SiC及AlN除外之組成之陶瓷。
如前述，藉由加工設置之貫通孔之尺寸愈小，相對於貫通孔之直徑，雷射之直徑愈大，相對地熱影響區域變大而容易發生形狀不良、去除物之再附著等之缺陷。因此，由本發明之效果，於貫通孔之尺寸愈小愈顯著。具體來說，本發明之陶瓷可用於製造具備內切圓之直徑為100μm以下之貫通孔或狹縫，更佳為內切圓之直徑為50μm以下之貫通孔或狹縫，又更佳為內切圓之直徑為30μm以下之貫通孔或狹縫之探針導引零件。且，狹縫之內切圓之直徑與狹縫寬度同義。又，陶瓷愈厚，貫通孔之形成越耗費時間、相對地熱影響區域較大。因此，本發明之陶瓷可用於製造相對於貫通孔深度的內切圓之直徑之比(深度/內切圓之直徑)為6.0以上，尤其10.0以上之探針導引零件。
加工表面之粗糙度 加工表面之粗糙度係藉由脈衝雷射加工，於厚度0.3mm之陶瓷材料形成9個50μm見方之貫通孔時之加工孔內面，以雷射共焦點顯微鏡(KEYENCE製VK-X150)以任意的5視野測定長度100μm以上並進行斜率修正而算出Ra，並評價其平均值。Ra為0.25μm以下設為良好。
150℃熱處理後有無龜裂發生 150℃熱處理後有無龜裂發生係將厚度0.3mm之陶瓷材料以5℃/分自室溫升溫至150℃，並於150℃維持100小時後，於室溫自然放冷，自陶瓷到達室溫後再靜置5小時後，使用數位顯微鏡(KEYENCE製VHC-6000)，以觀察倍率200倍拍攝5視野以上，自拍攝圖像觀察有無龜裂發生。
2. 陶瓷之製造方法 以下，針對本發明陶瓷之製造方法之例加以說明。
以球磨機等之習知方法混合Si 3N 4粉末、ZrO 2粉末、SiC及/或AlN粉末、與自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、H 2MoO 4(燒結後成為MoO 3)、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上之氧化物粉末。亦即，於容器內與各粉末同時混合溶劑及陶瓷製或內有鐵心之樹脂製球並漿料化。此時，溶劑可使用水或醇。進一步，根據需求亦可使用分散劑及黏合劑等之添加劑。
以噴霧乾燥或減壓蒸發等之習知方法使所得漿料造粒。亦即以噴霧乾燥機噴霧乾燥而顆粒化或以減壓蒸發器乾燥並粉末化。
於高溫高壓下，以例如熱壓或HIP(熱均壓加壓法)等之習知方法使所得之粉末燒結，獲得陶瓷燒結體。熱壓之情況，可於氮氣環境中燒成。又燒結溫度宜為1300~1800℃之範圍。若溫度過低則燒結不充分，若過高則發生氧化物成分溶出等之問題。
加壓力以10~50MPa之範圍為適當。又加壓力持續時間係根據溫度及尺寸而定但通常約為1~4小時。又即使於HIP之情況，只要適當設定溫度及加壓力等之燒成條件即可。此外，亦可採用常壓燒成法及環境氣體加壓燒成法等之習知燒成法。 [實施例]
為了確認本發明之效果，變化調配比，將Si 3N 4粉末、ZrO 2粉末、SiC及/或AlN粉末、及自MgO、Y 2O 3、Al 2O 3、SiO 2、CeO 2、TiO 2及H 2MoO 4(燒結後成為MoO 3)選擇之1種以上之氧化物粉末與水、分散劑、樹脂、陶瓷製之球一起混合，以噴霧乾燥機噴霧乾燥所得漿料成顆粒狀。將所得顆粒填充於石墨製之模具(模)，於氮氣環境中邊施加30MPa之壓力邊於1700℃進行2小時熱壓燒成，獲得長150×寬150×厚度30mm之試驗材。
自所得試驗材採取試驗片，進行各種試驗。
＜熱膨脹率＞ 遵循JIS R1618求出上述試驗材於-50~500℃之熱膨脹係數。於-50~500℃之熱膨脹係數係以3.0~6.0×10 -6/℃為基準。
＜彎曲強度＞ 遵循JIS R1601求出上述試驗材之三點彎曲強度。彎曲強度係以600MPa以上為基準。
＜相對密度＞ 遵循JIS C2141求出上述試驗材之鬆密度，將求出之鬆密度除以理論密度求出相對密度。相對密度係以95%以上為基準。
＜楊氏模數＞ 遵循JIS R1602並求出上述試驗材之楊氏模數。楊氏模數係以240GPa以上為基準。
＜微細加工性＞ 微細加工性係藉由脈衝雷射加工，於厚度0.3mm之陶瓷材料形成9個50μm見方及30μm見方之貫通孔時之加工精度進行評價。具體而言，針對以光學顯微鏡(例如 KEYENCE(股)製VHX7000)拍攝之圖像，以圖像測定機(例如MITUTOYO(股)製QUCIK VISION)觀察並評價。分別對50μm見方之貫通孔加工使用波長1064nm之脈衝雷射，對30μm見方之貫通孔加工使用波長532nm之脈衝雷射。微細加工良好意指自雷射之穿透側觀察孔形狀，加工精度為 ±2μm以下，針對各個方形孔之角落R，以任意3點圓量測之R為5μm以下，且無附著物之情況。微細加工良好之情況設為「○」，此以外之情況(有材料殘留之情況、有形狀變形之情狀等)為「×」。且圖4顯示雷射加工時之狀態之概略圖。如圖4所示，關於陶瓷，以照射雷射光之側稱為雷射照射側，以雷射照射側之相反側稱為雷射穿透側。
＜加工速度＞ 加工速度係測定自開始形成上述9個貫通孔至完成之時間，求出評價對象的陶瓷之加工時間(t 1)與基準組成之陶瓷之加工時間(t 0)之比(t 1/t 0)並評價。比(t 1/t 0)為1.05以上之情況為良好。於1.10以上，進而為1.15以上之情況，進而評價為加工速度良好。且所謂基準組成意指具有自評價對象的陶瓷，以Si 3N 4及ZrO 2之比為一定之條件，將SiC及AlN除外之組成的陶瓷。
＜加工表面之粗糙度＞ 加工表面之粗糙度係藉由脈衝雷射加工，於厚度0.3mm之陶瓷材料形成9個50μm見方之貫通孔時之加工孔內面，以雷射共焦點顯微鏡(KEYENCE製VK-X150)以任意的5視野測定長度100μm以上並進行斜率修正而算出Ra，並評價其平均值。Ra為0.25μm以下設為良好。且，加工表面之粗糙度係針與陶瓷材料之與厚度方向平行之剖面，觀察孔內面之包含厚度中心部之區域(具體而言，係以圖8之長方形包圍之部分)。
＜150℃熱處理後有無龜裂發生＞ 150℃熱處理後有無龜裂發生係將厚度0.3mm之陶瓷材料以5℃/分自室溫升溫至150℃，並於150℃維持100小時後，於室溫自然放冷，自陶瓷到達室溫後再靜置5小時後，使用數位顯微鏡(KEYENCE製VHC-6000)，以觀察倍率200倍拍攝5視野以上，自拍攝圖像觀察有無龜裂發生。無龜裂發生之情況設為○，有龜裂發生之情況為×。
Figure 02_image005
Figure 02_image007
Figure 02_image009
Figure 02_image011
Figure 02_image013
如表1及2所示，於滿足本發全部條件之實施例1~6，各種性能優異。尤其實施例1~6，與各基準組成(Si 3N 4及ZrO 2之比率相同之組成)相比，加工速度比成為1.05以上，確認本發明之優異效果。另一方面，比較例1~12，SiC及AlN之量偏離本發明規定之範圍，不滿足期望性能。
如表3及4所示，本發明例7~11，係使用具有各種粒徑之SiC粉末及AlN之一種以上作為原料粉末之陶瓷燒結體。如本發明例7~11所示，可知陶瓷燒結體中之SiC、AlN之平均粒徑愈小，有彎曲強度愈高之傾向。 [產業上之可利用性]
依據本發明，因可獲得與矽相同程度之熱膨脹係數、優異的機械強度及加工性(高精度細密加工、優異的加工表面性狀、抑制微粒發生)及可高效率雷射加工之陶瓷，故作為探針導引零件、探針卡及檢查用插座尤其有用。
10:探針卡 11:探針 12:探針導件 12a:貫通孔 13:矽晶圓 14:IC晶片
[圖1]係例示探針卡之構成之剖面圖。 [圖2]係例示探針導件之俯視圖。 [圖3]係自上方拍攝實施例2之微細加工後之孔的照片。 [圖4]係雷射加工時之狀態的概略圖。
10:探針卡
11:探針
12:探針導件
12a:貫通孔
13:矽晶圓
14:IC晶片

Claims (11)

  1. 一種陶瓷，其以質量%計，含有： Si 3N 4：20.0~60.0%、 ZrO 2：25.0~70.0%、 自SiC及AlN選擇之1種以上：2.0~17.0%(但，AlN為10.0%以下)及、 自MgO、Y 2O 3、CeO 2、CaO、HfO 2、TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上：5.0~15.0%， 且由下述(1)式求出之Fn為0.02~0.40，
    Figure 03_image001
    。
  2. 如請求項1之陶瓷，其以質量%計，含有： 自MgO、Y 2O 3、CeO 2、CaO及HfO 2選擇之1種以上、及 自TiO 2、Al 2O 3、SiO 2、MoO 3、CrO、CoO、ZnO、Ga 2O 3、Ta 2O 5、NiO及V 2O 5選擇之1種以上。
  3. 如請求項1及2之陶瓷，其中ZrO 2之結晶相為正方晶、或正方晶及單斜晶、或立方晶、或立方晶及正方晶、或立方晶及單斜晶。
  4. 如請求項1至3中任一項之陶瓷，其中ZrO 2為立方晶。
  5. 如請求項1至4中任一項之陶瓷，其於-50 ~500℃之熱膨脹係數為3.0~6.0×10 -6/℃，且3點彎曲強度為600MPa以上。
  6. 一種探針導引零件，其係導引探針卡之探針的探針導引零件， 其具備：使用如請求項1至5中任一項之陶瓷的板狀本體部，及 於前述本體部，導通前述探針之複數的貫通孔及/或狹縫。
  7. 如請求項6之探針導引零件，其中前述複數之貫通孔內面及前述狹縫內面之表面粗糙度以Ra表示為0.25μm以下。
  8. 如請求項6或7之探針導引零件，其中前述貫通孔及/或前述狹縫內之內切圓之直徑為100μm以下。
  9. 如請求項6至8中任一項之探針導引零件，其中前述貫通孔及/或前述狹縫之深度D與內切圓之直徑H之比(D/H)為6.0以上。
  10. 一種探針卡，其具備：複數之探針及如請求項6至9中任一項之探針導引零件。
  11. 一種封裝檢查用插座，其使用如請求項1至5中任一項之陶瓷。
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