WO2021153180A1 - Procédé de fabrication de structure céramique - Google Patents

Procédé de fabrication de structure céramique Download PDF

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Publication number
WO2021153180A1
WO2021153180A1 PCT/JP2021/000309 JP2021000309W WO2021153180A1 WO 2021153180 A1 WO2021153180 A1 WO 2021153180A1 JP 2021000309 W JP2021000309 W JP 2021000309W WO 2021153180 A1 WO2021153180 A1 WO 2021153180A1
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WO
WIPO (PCT)
Prior art keywords
molded body
support member
ceramic structure
contact
manufacturing
Prior art date
Application number
PCT/JP2021/000309
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English (en)
Japanese (ja)
Inventor
丈幸 荒井
Original Assignee
京セラ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京セラ株式会社 filed Critical 京セラ株式会社
Priority to CN202180011161.9A priority Critical patent/CN115004353A/zh
Priority to KR1020227025957A priority patent/KR20220120656A/ko
Priority to JP2021574579A priority patent/JP7447154B2/ja
Publication of WO2021153180A1 publication Critical patent/WO2021153180A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/638—Removal thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Definitions

  • the disclosed embodiment relates to a method for manufacturing a ceramic structure.
  • Patent Document 1 As a ceramic structure used as an electrostatic chuck for holding a semiconductor wafer or the like, a ceramic structure having electrodes formed inside is known (see, for example, Patent Document 1).
  • the method for producing a ceramic structure includes a step of forming an electrode layer containing a metal inside a raw material containing a ceramic and molding the whole into a plate shape to obtain a molded body, and the molding.
  • a step of placing the molded product on a support member that contacts and supports a part of the main surface with the main surface of the body close to the electrode layer facing downward, and the step of placing the molded product on the support member. Includes a step of degreasing the molded body.
  • FIG. 1 is a perspective view showing a configuration of a molded product according to an embodiment.
  • FIG. 2 is a plan view showing the arrangement of the electrode layer inside the molded body according to the embodiment.
  • FIG. 3 is a plan view showing the arrangement of the flow paths inside the molded body according to the embodiment.
  • FIG. 4 is a cross-sectional view taken along the line AA shown in FIG.
  • FIG. 5 is a cross-sectional view showing the arrangement of the molded body and the support member in the degreasing step according to the embodiment.
  • FIG. 6 is a plan view showing the arrangement of the molded body and the support member in the degreasing step according to the embodiment.
  • FIG. 7 is a perspective view showing the configuration of the ceramic structure according to the embodiment.
  • FIG. 8 is a plan view showing the configuration of the ceramic structure according to the embodiment.
  • FIG. 9 is a plan view showing the arrangement of the molded body and the support member in the degreasing step according to the first modification of the embodiment.
  • FIG. 10 is a plan view showing the arrangement of the molded body and the support member in the degreasing step according to the second modification of the embodiment.
  • FIG. 11 is a plan view showing the configuration of the support member according to the third modification of the embodiment.
  • FIG. 12 is a cross-sectional view showing the configuration of the support member according to the third modification of the embodiment.
  • FIG. 13 is a cross-sectional view showing the configuration of the support member according to the modified example 4 of the embodiment.
  • the degreasing step was performed by placing the contact surface on a shelf plate with the contact surface facing downward. In this case, since the entire contact surface does not come into contact with the outside air, the organic component may not be sufficiently removed from the contact surface.
  • ⁇ Molding process> In the step of manufacturing the ceramic structure 100 (see FIG. 7) according to the embodiment, first, a step of molding the molded body 10 is performed. Therefore, first, the configuration of the molded body 10 will be described with reference to FIGS. 1 to 4.
  • FIG. 1 is a perspective view showing the configuration of the molded body 10 according to the embodiment
  • FIG. 2 is a plan view showing the arrangement of the electrode layer 11 inside the molded body 10 according to the embodiment
  • FIG. 3 is a plan view showing the arrangement. It is a top view which shows the arrangement of the flow path 14 in the molded body 10 which concerns on a form
  • FIG. 4 is a cross-sectional view taken along the line AA shown in FIG.
  • the molded body 10 is formed by molding a raw material containing ceramic into a substantially disk shape, and has a front surface 10a which is one main surface and a main surface 10a of the other. It has a back surface 10b, which is a surface, and a side surface 10c.
  • the thickness of the molded body 10 is, for example, about 20 to 60 mm.
  • the molded body 10 contains, for example, aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), cordierite, silicon carbide (SiC), silicon nitride (Si 3 N 4 ), and the like as main components. Further, an electrode layer 11 and a flow path 14 are provided inside the molded body 10.
  • the electrode layer 11 is formed of a paste containing a metal such as platinum, tungsten, or molybdenum, and is a portion that becomes an electrode 101 (see FIG. 7) of the ceramic structure 100 after the molded body 10 is fired. As shown in FIG. 2, the electrode layer 11 according to the embodiment is separated into a first electrode layer 12 and a second electrode layer 13.
  • the first electrode layer 12 and the second electrode layer 13 are each formed in a semicircular shape, and are arranged inside the molded body 10 so that the semicircular strings face each other. Then, the first electrode layer 12 and the second electrode layer 13 are combined to form the circular electrode layer 11.
  • the first electrode layer 12 has a connecting portion 12a exposed from the side surface 10c of the molded body 10
  • the second electrode layer 13 has a connecting portion 13a exposed from the side surface 10c of the molded body 10.
  • the connecting portions 12a and 13a are provided so as to extend along the chord from a portion of the first electrode layer 12 and the second electrode layer 13 where the arc and the chord intersect.
  • the center of the circular shape in the outer shape of the entire electrode layer 11 is set to be the same as the center of the circle in the outer shape of the molded body 10.
  • the thickness of the electrode layer 11 is, for example, about 1 to 100 ⁇ m.
  • the electrode layer 11 is provided inside the molded body 10 closer to the front surface 10a than the back surface 10b, and is arranged substantially parallel to the front surface 10a.
  • the front surface 10a of the molded body 10 is the main surface of the pair of main surfaces of the molded body 10 on the side closer to the electrode layer 11.
  • the configuration of the electrode layer 11 according to the embodiment is not limited to the examples of FIGS. 1 to 4.
  • the electrode layer 11 according to the embodiment may be spiral or concentric in a plan view, or two or more electrode layers 11 may be stacked and arranged.
  • the flow path 14 has a meandering shape that extends over the entire front surface 10a in a plan view.
  • the side surfaces 10c of the molded body 10 are provided with openings 14a and 14b of the flow path 14.
  • the flow path 14 is provided inside the molded body 10 at a position distant from the electrode layer 11 with respect to the front surface 10a, and is substantially parallel to the front surface 10a. Is placed in.
  • the configuration of the flow path 14 according to the embodiment is not limited to the examples of FIGS. 1 to 4.
  • the flow path 14 according to the embodiment may be spiral in a plan view, or two or more layers of flow paths 14 may be stacked and arranged.
  • aluminum oxide powder with an average particle size of 1.5 ⁇ m and a purity of 99.9% is used. Then, the aluminum oxide powder is prepared by mixing an organic binder and a solvent without adding a sintering aid, drying at 60 ° C., and then sizing using a mesh path. Make granules.
  • this granulated powder is filled in a mold, and a plurality of disk-shaped green sheets having a predetermined diameter and thickness are molded by a molding pressure of 98 MPa.
  • a notch corresponding to the flow path 14 is formed on the predetermined green sheet by cutting. Further, a platinum powder paste is screen-printed on another predetermined green sheet to form the electrode layer 11.
  • a plurality of disk-shaped green sheets are laminated via an organic binder so that the structure of the molded body 10 shown in FIGS. 1 to 4 is realized, and the laminated body is pressed at a molding pressure of 98 MPa. Mold and adhere. As a result, the molding step of the molded body 10 according to the embodiment is completed.
  • FIG. 5 is a cross-sectional view showing the arrangement of the molded body 10 and the support member 20 in the degreasing step according to the embodiment
  • FIG. 6 is a plan view showing the arrangement of the molded body 10 and the support member 20 in the degreasing step according to the embodiment. It is a figure.
  • the degreasing step of the molded body 10 is performed in a state where the molded body 10 is placed on the support member 20. That is, in the step of manufacturing the ceramic structure 100, a step of placing the molded body 10 on the support member 20 is performed before the step of degreasing the molded body 10.
  • the support member 20 is first arranged on the shelf board 21.
  • a plurality of support members 20 that are linear in a plan view are arranged side by side substantially in parallel.
  • the support member 20 has, for example, a square pillar shape, and is arranged on the shelf board 21 with the square pillar lying down.
  • the support member 20 has an abutting portion 20a on the upper surface that is in contact with the molded body 10.
  • the upper surfaces (that is, the contact portions 20a) of the plurality of support members 20 are arranged substantially flush with each other.
  • the molded body 10 is placed on the upper surface of the plurality of support members 20 arranged in this way.
  • the molded body 10 is mounted on the support member 20 with the front surface 10a of the molded body 10 facing downward.
  • the support member 20 is in a state where a part of the front surface 10a is in contact with the contact portion 20a of the support member 20 and the remaining portion of the front surface 10a is exposed to the outside air. It is placed in.
  • the back surface 10b and the side surface 10c are all exposed to the outside air.
  • the molded body 10 placed on the support member 20 is degreased.
  • the molded body 10 placed on the support member 20 is heated to a predetermined degreasing temperature (for example, about 250 to 350 ° C.) in an air atmosphere, and held for a predetermined time (for example, about 24 hours) after the temperature rise.
  • a predetermined degreasing temperature for example, about 250 to 350 ° C.
  • a predetermined time for example, about 24 hours
  • the molded body 10 placed on the support member 20 is placed at a predetermined degreasing temperature (for example, in a nitrogen atmosphere). It is carried out by raising the temperature to 250 to 350 ° C.) and holding the temperature for a predetermined time (for example, about 24 hours) after the temperature rise.
  • a predetermined degreasing temperature for example, in a nitrogen atmosphere
  • the organic component can be sufficiently degreased from the front surface 10a of the molded body 10, so that the entire molded body 10 can be sufficiently degreased. Therefore, according to the embodiment, it is possible to prevent cracks from being generated after the molded product 10 is fired.
  • heat is similarly applied to the front surface 10a and the back surface 10b of the molded body 10 through the air atmosphere, so that the heat applied to the top and bottom during the degreasing step is non-uniform. It is possible to prevent the molded body 10 from warping due to the above.
  • the contact portions 20a of the plurality of support members 20 are substantially flush with each other, the front surface 10a (that is, the contact surface with the semiconductor wafer) in the molded body 10 after degreasing. Flatness can be ensured.
  • the flatness of the front surface 100a (see FIG. 7) with which the semiconductor wafer abuts can be ensured. ..
  • the molded body 10 on a plurality of linear support members 20 arranged side by side in parallel. As a result, all the organic components degreased from the front surface 10a that do not come into contact with the contact portion 20a can be released to the outside without being trapped in the closed space.
  • the organic component can be more effectively degreased from the front surface 10a of the molded body 10, so that the entire molded body 10 can be degreased more effectively.
  • the contact portion 20a of the support member 20 is arranged so as not to be in contact with the center 10a1 of the circular front surface 10a. As a result, it is possible to prevent the central portion 10a1 from being pressed by the support member 20 and deforming the central portion of the molded body 10.
  • the contact portion 20a of the support member 20 may be arranged so as to avoid the flow path 14 in a plan view. As a result, it is possible to prevent the molded body 10 from being deformed due to the support member 20 pressing the portion near the flow path 14, which is a structurally weak portion.
  • the contact portion 20a of the support member 20 may be arranged so as to intersect the flow path 14 in a plan view. This also makes it possible to prevent the molded body 10 from being deformed due to the support member 20 pressing the portion near the flow path 14, which is a structurally weak portion.
  • the molded body 10 may be fired in the same state as the degreasing step (that is, the molded body 10 is placed on the support member 20).
  • the molded body 10 placed on the support member 20 is heated to a predetermined firing temperature (for example, about 1500 to 1700 ° C.) in an air atmosphere, and after the temperature rise, it is heated for a predetermined time (for example, for example). It is done by holding (about 2 hours).
  • a predetermined firing temperature for example, about 1500 to 1700 ° C.
  • a predetermined time for example, for example. It is done by holding (about 2 hours).
  • the molded body 10 placed on the support member 20 is placed at a predetermined firing temperature (for example, in a nitrogen atmosphere). It is carried out by raising the temperature to 1500 to 1700 ° C.) and holding the temperature for a predetermined time (for example, about 2 hours) after the temperature rise.
  • a predetermined firing temperature for example, in a nitrogen atmosphere
  • the molded body 10 can be fired while the organic component partially remaining in the vicinity of the front surface 10a of the molded body 10 is sufficiently degreased in the firing step. Therefore, according to the embodiment, cracks generated due to insufficient degreasing can be suppressed.
  • the degreasing step and the firing step of the molded body 10 can be continuously performed, the entire manufacturing process of the ceramic structure 100 can be shortened.
  • FIG. 7 is a perspective view showing the configuration of the ceramic structure 100 according to the embodiment.
  • the ceramic structure 100 according to the embodiment can be used as a sample holder that holds a sample such as a semiconductor wafer on the front surface 100a by an electrostatic force.
  • the ceramic structure 100 is substantially disk-shaped and has a front surface 100a and a back surface 100b.
  • the front surface 100a is a portion corresponding to the front surface 10a of the molded body 10
  • the back surface 100b is a portion corresponding to the back surface 10b of the molded body 10.
  • the front surface 100a and the back surface 100b are polished to a flat surface in a predetermined polishing step after the firing step.
  • a predetermined polishing step For example, in the embodiment, it is preferable to polish the front surface 100a and then the back surface 100b.
  • the front surface 100a can be accurately polished to a flat surface.
  • an electrode 101 and a flow path 104 are provided inside the ceramic structure 100.
  • the electrode 101 is a portion corresponding to the electrode layer 11 of the molded body 10
  • the flow path 104 is a portion corresponding to the flow path 14 of the molded body 10.
  • the electrode 101 is separated into a positive electrode 102 and a negative electrode 103.
  • the positive electrode 102 is a portion corresponding to the first electrode layer 12, and is connected to a positive electrode of an external power source (not shown).
  • the negative electrode 103 is a portion corresponding to the second electrode layer 13 and is connected to the negative electrode of the external power supply.
  • the sample held on the front surface 100a can be heated, cooled, or kept warm by flowing the heat medium through the flow path 104.
  • any heat medium may be used as long as it is a substance that can exchange heat with the sample held on the front surface 100a from the flow path 104.
  • a heat medium various fluids such as hot water, cold water, an aqueous medium such as steam, an organic medium such as ethylene glycol, or a gas containing air can be used.
  • an aqueous solvent such as pure water
  • the support member 20 is composed of the same main component as the molded body 10.
  • “composed of the same main component” here means that 80% or more of the composition is the same.
  • the fact that the molded body 10 and the support member 20 are composed of the same main component means that, for example, the composition can be identified by using a fluorescent X-ray analyzer, or the crystal phase can be identified by using an X-ray diffractometer. It can be confirmed by doing.
  • FIG. 8 is a plan view showing the configuration of the ceramic structure 100 according to the embodiment.
  • the first region 100a1 is a portion that comes into contact with the contact portion 20a of the support member 20 during the degreasing step
  • the second region 100a2 is a portion that comes into contact with the contact portion 20a of the support member 20 during the degreasing step. This is the part that was not in contact.
  • the first region 100a1 is, for example, white, has a brightness index L * in the CIE1976L * a * b * color space of 94.23, a chromaticity index a * of ⁇ 0.10, and a chromaticity index b *. Is +1.65.
  • the second region 100a2 is, for example, yellow, and has a brightness index L * in the CIE1976L * a * b * color space of 91.74, a chromaticity index a * of ⁇ 0.26, and a chromaticity index.
  • b * is +5.04.
  • two regions having different color tones can be formed on the front surface 100a. Therefore, by using the contours of these two regions, a sample such as a semiconductor wafer can be formed. Alignment can be easily carried out.
  • FIG. 9 is a plan view showing the arrangement of the molded body 10 and the support member 20 in the degreasing step according to the first modification of the embodiment.
  • a plurality of linear support members 20 are arranged side by side to perform degreasing
  • the shape of the support members 20 is not limited to the linear shape.
  • a plurality of arc-shaped support members 20 may be arranged side by side for degreasing.
  • This also allows degreasing to be performed in a state where a part of the front surface 10a of the molded body 10 is exposed to the outside air, so that the entire molded body 10 can be sufficiently degreased.
  • the organic component can be more effectively degreased from the front surface 10a of the molded body 10, so that the entire molded body 10 can be more effectively degreased.
  • the contact portion 20a (see FIG. 5) of the support member 20 is arranged so as not to be in contact with the center 10a1 of the circular front surface 10a. As a result, it is possible to prevent the central portion 10a1 from being pressed by the support member 20 and deforming the central portion of the molded body 10.
  • the contact portion 20a of the support member 20 may be arranged so as not to be in contact with the edge 10a2 of the front surface 10a.
  • FIG. 10 is a plan view showing the arrangement of the molded body 10 and the support member 20 in the degreasing step according to the second modification of the embodiment.
  • the molded body 10 may be placed on the grid-shaped support member 20 to perform the degreasing step.
  • This also allows degreasing to be performed in a state where a part of the front surface 10a of the molded body 10 is exposed to the outside air, so that the entire molded body 10 can be sufficiently degreased in the degreasing step.
  • the space surrounded by the grid-shaped support member 20 may be ventilated to the outside by a slit or the like (not shown).
  • a slit or the like not shown
  • the organic component can be more effectively degreased from the front surface 10a of the molded body 10, so that the entire molded body 10 can be more effectively degreased.
  • the contact portion 20a (see FIG. 5) of the support member 20 is arranged so as not to be in contact with the center 10a1 of the circular front surface 10a. As a result, it is possible to prevent the central portion 10a1 from being pressed by the support member 20 and deforming the central portion of the molded body 10.
  • FIG. 11 is a plan view showing the configuration of the support member 20 according to the modified example 3 of the embodiment
  • FIG. 12 is a cross-sectional view showing the configuration of the support member 20 according to the modified example 3 of the embodiment.
  • a pair of semi-arc-shaped support members 20A adjacent to the central portion of the molded body 10 and a pair of semi-arc-shaped support members adjacent to the peripheral portion of the molded body 10 20B and 20B are arranged side by side.
  • the contact portion 20a1 of the support member 20A adjacent to the central portion of the molded body 10 is located at a position higher than the contact portion 20a2 of the support member 20B adjacent to the peripheral edge portion of the molded body 10. Be placed.
  • the degreasing step and the firing step can be performed in a state where the molded body 10 is warped upward. Therefore, according to the modified example 3, in the ceramic structure 100 (see FIG. 7) having a structure in which a convex warp is generated downward by the degreasing step and the firing step, the flatness of the front surface 100a to which the semiconductor wafer abuts is ensured. can do.
  • FIG. 13 is a cross-sectional view showing the configuration of the support member 20 according to the modified example 4 of the embodiment, and is a drawing corresponding to FIG. 12 of the modified example 3.
  • the contact portion 20a1 of the support member 20A adjacent to the central portion of the molded body 10 is larger than the contact portion 20a2 of the support member 20B adjacent to the peripheral portion of the molded body 10. It is placed in a low position.
  • the degreasing step and the firing step can be performed in a state where the molded body 10 is warped downward. Therefore, according to the modified example 4, in the ceramic structure 100 (see FIG. 7) having a structure in which a convex warp is generated by the degreasing step and the firing step, the flatness of the front surface 100a to which the semiconductor wafer abuts is ensured. can do.
  • the support member 20 according to the embodiment may be made of a porous body.
  • This also allows degreasing to be performed in a state where a part of the front surface 10a of the molded body 10 is exposed to the outside air, so that the entire molded body 10 can be sufficiently degreased in the degreasing step.
  • the process of manufacturing the disc-shaped ceramic structure 100 is shown, but the shape of the manufactured ceramic structure 100 is not limited to the disc shape.
  • the ring-shaped ceramic structure 100 may be manufactured in each of the above steps.
  • the ring-shaped ceramic structure 100 can be formed, for example, by firing the disk-shaped ceramic structure 100 and then cutting the inside to hollow out.
  • the ceramic structure of the present embodiment may be used, for example, as a high-frequency electrode or a heater in semiconductor manufacturing.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

La présente invention concerne un procédé de fabrication de structure céramique qui comprend : une étape dans laquelle une couche d'électrode (11) qui comprend un métal est formée à l'intérieur d'un matériau source qui comprend une céramique, et le résultat dans son ensemble est moulé en une forme de plaque pour obtenir un corps moulé (10) ; une étape dans laquelle, tandis que la surface principale du corps moulé (10) qui se trouve sur le côté proche de la couche d'électrode (11) est orientée vers le bas, le corps moulé (10) est monté sur des éléments de support (20) qui entrent en contact avec une section de ladite surface principale et fournissent un support ; et une étape dans laquelle le corps moulé (10) qui est monté sur les éléments de support (20) est dégraissé.
PCT/JP2021/000309 2020-01-31 2021-01-07 Procédé de fabrication de structure céramique WO2021153180A1 (fr)

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CN202180011161.9A CN115004353A (zh) 2020-01-31 2021-01-07 陶瓷构造体的制造方法
KR1020227025957A KR20220120656A (ko) 2020-01-31 2021-01-07 세라믹 구조체의 제조 방법
JP2021574579A JP7447154B2 (ja) 2020-01-31 2021-01-07 セラミック構造体の製造方法

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JP2020-014571 2020-01-31

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