WO2021131711A1 - 基板処理方法及び基板処理装置 - Google Patents

基板処理方法及び基板処理装置 Download PDF

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Publication number
WO2021131711A1
WO2021131711A1 PCT/JP2020/045884 JP2020045884W WO2021131711A1 WO 2021131711 A1 WO2021131711 A1 WO 2021131711A1 JP 2020045884 W JP2020045884 W JP 2020045884W WO 2021131711 A1 WO2021131711 A1 WO 2021131711A1
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WO
WIPO (PCT)
Prior art keywords
laser
substrate
laser beam
absorption layer
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2020/045884
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
陽平 山下
隼斗 田之上
溝本　康隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=76575431&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=WO2021131711(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority to US17/788,776 priority Critical patent/US12322656B2/en
Priority to CN202510666111.4A priority patent/CN120637204A/zh
Priority to CN202510666344.4A priority patent/CN120637205A/zh
Priority to CN202080087508.3A priority patent/CN114830295B/zh
Priority to KR1020257043052A priority patent/KR20260008836A/ko
Priority to JP2021567196A priority patent/JP7304433B2/ja
Priority to CN202510666347.8A priority patent/CN120637207A/zh
Priority to CN202510666346.3A priority patent/CN120637206A/zh
Priority to KR1020257043161A priority patent/KR20260008837A/ko
Priority to EP20905166.3A priority patent/EP4079445A4/en
Priority to KR1020227025085A priority patent/KR102905960B1/ko
Priority to KR1020257043071A priority patent/KR20260004590A/ko
Priority to KR1020257043181A priority patent/KR20260008839A/ko
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2021131711A1 publication Critical patent/WO2021131711A1/ja
Anticipated expiration legal-status Critical
Priority to JP2023104005A priority patent/JP7579916B2/ja
Priority to JP2024188780A priority patent/JP7611456B1/ja
Priority to JP2024188786A priority patent/JP7641435B2/ja
Priority to JP2024188772A priority patent/JP7641434B2/ja
Priority to JP2025026963A priority patent/JP7727869B2/ja
Priority to US19/196,777 priority patent/US20250259896A1/en
Priority to US19/196,780 priority patent/US20250259898A1/en
Priority to US19/196,778 priority patent/US20250259897A1/en
Priority to US19/196,783 priority patent/US20250259899A1/en
Priority to JP2025090098A priority patent/JP7843396B2/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Definitions

  • the processing block 30 has a laser irradiation device 31 and a cleaning device 32.
  • the laser irradiation device 31 irradiates the laser absorption layer P of the second wafer W2 with laser light.
  • the configuration of the laser irradiation device 31 will be described later.
  • the irradiation start position of the laser beam L is preferably between the outer peripheral edge Ea of the second wafer W2 and the junction end Eb of the first wafer W1 and the second wafer W2 in the polymerization wafer T.
  • the eccentricity is absorbed and the laser beam L is applied to the laser absorption layer P. It can be irradiated appropriately.
  • the laser light L is irradiated to the laser absorption layer P. Since the laser beam L is irradiated in a pulsed manner, the peak power of the laser beam L can be increased. Therefore, as described with reference to FIG. 1, peeling can occur at the interface between the laser absorption layer P and the second wafer W2, and the second wafer W2 is appropriately peeled from the laser absorption layer P. be able to.
  • the first wafer W1 that has been subjected to all the processing is transferred to the cassette Cw1 of the cassette mounting table 11 by the wafer transfer device 22. In this way, a series of wafer processing in the wafer processing system 1 is completed.
  • the laser light L is irradiated to the laser absorption layer P in a pulse shape, so that the peak power of the laser light L can be increased, and as a result, the laser absorption Peeling can occur at the interface between the layer P and the second wafer W2.
  • the heat effect is small as compared with the case where a continuous wave is used, and stable laser lift-off can be performed. Therefore, the second wafer W2 can be appropriately peeled from the laser absorption layer P, and the device layer D2 can be transferred to the first wafer W1.
  • the frequency of the laser beam L1 oscillated from the laser oscillator 130 is not changed, the pulse waveform of the laser beam L1 does not change, and the pulse waveform of the laser beam L2 can be the same as the pulse waveform of the laser beam L1. Therefore, the frequency of the laser beam L2 can be easily adjusted, the conventional complicated adjustment as described above becomes unnecessary, and the process control of the laser processing becomes easy.
  • the output of the laser beam L1 from the laser oscillator 130 was 40 W, it was not necessary to adjust the output for the energy of 400 ⁇ J required for peeling.
  • the output of the laser beam L1 may be attenuated by 20% in the attenuator 132 to adjust the output.
  • the laser head 22 for example, galvano is used.
  • a plurality of galvano mirrors (not shown) are arranged inside the laser head 221.
  • an f ⁇ lens is used for the lens 223.
  • the laser beam L input to the laser head 221 is reflected by the galvano mirror, propagated to the lens 223 via the optical system 222, transmitted through the second wafer W2, and irradiates the laser absorption layer P. Will be done.
  • the angle of the galvano mirror the laser beam L can be scanned by the laser absorption layer P.
  • the chuck 210 is moved so as to be displaced in the Y-axis direction, and the irradiation and scanning of the laser beam L and the movement of the chuck 210 are repeated in the same manner as described above to irradiate the laser beam L in a row in the X-axis direction. To do. Then, the laser beam L is applied to the laser absorption layer P.
  • the same effects as those in the above embodiment can be enjoyed. That is, since the laser beam L is irradiated to the laser absorption layer P in a pulse shape, peeling can be appropriately caused at the interface between the laser absorption layer P and the second wafer W2. Moreover, since the irradiation and scanning of the laser beam L are not stopped in a row in the X-axis direction, the processing time of the laser irradiation can be shortened and the throughput can be further improved.
  • a guide portion 240 and a holding member 250 may be provided on the upper surface of the chuck 100.
  • both the guide portion 240 and the holding member 250 are provided in the present embodiment, only the guide portion 240 may be provided or only the holding member 250 may be provided.
  • the vertical portion 241 can suppress the misalignment and slippage of the second wafer W2.
  • the guide portion 240 becomes useful.
  • both the guide portion 240 and the holding member 250 are provided, the effect of centering the polymerized wafer T and preventing the misalignment and slipping of the second wafer W2 is enhanced.
  • the interface between the laser absorption layer P and the second wafer W2 is irradiated with the laser beam L to peel off the second wafer W2 from the laser absorption layer P.
  • the laser absorption layer P may be peeled off so as to remain on the second wafer W2.
  • the same effects as those in the above embodiment can be enjoyed. That is, since the laser light L is irradiated to the laser absorption layer P in a pulse shape, the peak power of the laser light L can be increased, and as a result, the laser light L can be appropriately at the interface between the laser absorption layer P and the device layer D2. Peeling can occur. Moreover, the laser absorbing layer P remaining on the second wafer W2 is an oxide film (SiO 2 film), and this laser absorbing layer P is applied to the second wafer W2, for example, in a subsequent semiconductor manufacturing process. It can be used as an oxide film (insulating film) when producing Silicon Via).
  • the device layer D2 and the surface film F2 are formed on the surface of the laser absorption layer P1.
  • the device layer D2 and the surface film F2 are formed by a normal front end of line (FEOL) or back end of line (BEOL).
  • the peeling position of the laser absorption layer P1 is adjusted in the same manner as in the case shown in FIG. 24 by adjusting the absorption position of the laser beam L, that is, the peeling position of the laser absorption layer P1 to be the second wafer. Peeling may occur at the interface between W2 and the laser absorption layer P1.
  • the first wafer W1 and the second wafer W2 are joined.
  • a device layer D1 and a surface film F1 are formed on the surface W1a of the first wafer W1, and the surface film F1 and the surface film F2 are bonded to each other.
  • the laser beam L reflected by the reflective film R is absorbed by the laser absorption layer P. Therefore, the peeling efficiency of the second wafer W2 can be improved.

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  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Manufacturing Optical Record Carriers (AREA)
PCT/JP2020/045884 2019-12-26 2020-12-09 基板処理方法及び基板処理装置 Ceased WO2021131711A1 (ja)

Priority Applications (23)

Application Number Priority Date Filing Date Title
EP20905166.3A EP4079445A4 (en) 2019-12-26 2020-12-09 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
CN202510666347.8A CN120637207A (zh) 2019-12-26 2020-12-09 基板处理方法、基板处理装置以及基板处理系统
CN202510666344.4A CN120637205A (zh) 2019-12-26 2020-12-09 基板处理方法、基板处理装置以及基板处理系统
CN202080087508.3A CN114830295B (zh) 2019-12-26 2020-12-09 基板处理方法和基板处理装置
KR1020257043052A KR20260008836A (ko) 2019-12-26 2020-12-09 기판 처리 방법 및 기판 처리 장치
JP2021567196A JP7304433B2 (ja) 2019-12-26 2020-12-09 基板処理方法及び基板処理装置
CN202510666346.3A CN120637206A (zh) 2019-12-26 2020-12-09 基板处理方法、基板处理装置以及基板处理系统
US17/788,776 US12322656B2 (en) 2019-12-26 2020-12-09 Substrate laser processing method and substrate laser processing apparatus
KR1020257043161A KR20260008837A (ko) 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템
CN202510666111.4A CN120637204A (zh) 2019-12-26 2020-12-09 基板处理方法、基板处理装置以及基板处理系统
KR1020227025085A KR102905960B1 (ko) 2019-12-26 2020-12-09 기판 처리 방법 및 기판 처리 장치
KR1020257043071A KR20260004590A (ko) 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템
KR1020257043181A KR20260008839A (ko) 2019-12-26 2020-12-09 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템
JP2023104005A JP7579916B2 (ja) 2019-12-26 2023-06-26 基板処理方法、基板処理装置及び基板処理システム
JP2024188772A JP7641434B2 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2024188786A JP7641435B2 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2024188780A JP7611456B1 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2025026963A JP7727869B2 (ja) 2019-12-26 2025-02-21 基板処理方法及び基板処理システム
US19/196,777 US20250259896A1 (en) 2019-12-26 2025-05-02 Substrate processing method, substrate processing apparatus and substrate processing system
US19/196,780 US20250259898A1 (en) 2019-12-26 2025-05-02 Substrate processing method, substrate processing apparatus and substrate processing system
US19/196,778 US20250259897A1 (en) 2019-12-26 2025-05-02 Substrate processing method, substrate processing apparatus and substrate processing system
US19/196,783 US20250259899A1 (en) 2019-12-26 2025-05-02 Substrate processing method, substrate processing apparatus and substrate processing system
JP2025090098A JP7843396B2 (ja) 2019-12-26 2025-05-29 基板処理システム、プログラム及び記憶媒体

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-236190 2019-12-26
JP2019236190 2019-12-26
JP2020-011824 2020-01-28
JP2020011824 2020-01-28

Related Child Applications (5)

Application Number Title Priority Date Filing Date
US17/788,776 A-371-Of-International US12322656B2 (en) 2019-12-26 2020-12-09 Substrate laser processing method and substrate laser processing apparatus
US19/196,783 Continuation US20250259899A1 (en) 2019-12-26 2025-05-02 Substrate processing method, substrate processing apparatus and substrate processing system
US19/196,780 Continuation US20250259898A1 (en) 2019-12-26 2025-05-02 Substrate processing method, substrate processing apparatus and substrate processing system
US19/196,777 Continuation US20250259896A1 (en) 2019-12-26 2025-05-02 Substrate processing method, substrate processing apparatus and substrate processing system
US19/196,778 Continuation US20250259897A1 (en) 2019-12-26 2025-05-02 Substrate processing method, substrate processing apparatus and substrate processing system

Publications (1)

Publication Number Publication Date
WO2021131711A1 true WO2021131711A1 (ja) 2021-07-01

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PCT/JP2020/045884 Ceased WO2021131711A1 (ja) 2019-12-26 2020-12-09 基板処理方法及び基板処理装置

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US (5) US12322656B2 (https=)
EP (1) EP4079445A4 (https=)
JP (7) JP7304433B2 (https=)
KR (5) KR20260004590A (https=)
CN (5) CN120637206A (https=)
TW (7) TWI886074B (https=)
WO (1) WO2021131711A1 (https=)

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JPWO2023013468A1 (https=) * 2021-08-06 2023-02-09
WO2023021952A1 (ja) * 2021-08-16 2023-02-23 東京エレクトロン株式会社 処理方法及び処理システム
JPWO2023032706A1 (https=) * 2021-09-02 2023-03-09
JPWO2023145425A1 (https=) * 2022-01-31 2023-08-03
JPWO2023238542A1 (https=) * 2022-06-07 2023-12-14
KR20240163700A (ko) 2022-03-17 2024-11-19 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
WO2025009324A1 (ja) * 2023-07-05 2025-01-09 東京エレクトロン株式会社 処理システム及び処理方法
KR20260016511A (ko) 2023-05-25 2026-02-03 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
WO2026038308A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法
WO2026038302A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法
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