TWI886074B - 基板處理方法、基板處理裝置及基板處理系統 - Google Patents

基板處理方法、基板處理裝置及基板處理系統 Download PDF

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Publication number
TWI886074B
TWI886074B TW113145018A TW113145018A TWI886074B TW I886074 B TWI886074 B TW I886074B TW 113145018 A TW113145018 A TW 113145018A TW 113145018 A TW113145018 A TW 113145018A TW I886074 B TWI886074 B TW I886074B
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Taiwan
Prior art keywords
substrate
laser
laser light
absorption layer
wafer
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TW113145018A
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English (en)
Chinese (zh)
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TW202510179A (zh
Inventor
山下陽平
田之上隼斗
溝本康隆
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Manufacturing Optical Record Carriers (AREA)
TW113145018A 2019-12-26 2020-12-14 基板處理方法、基板處理裝置及基板處理系統 TWI886074B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2019-236190 2019-12-26
JP2019236190 2019-12-26
JP2020-011824 2020-01-28
JP2020011824 2020-01-28

Publications (2)

Publication Number Publication Date
TW202510179A TW202510179A (zh) 2025-03-01
TWI886074B true TWI886074B (zh) 2025-06-01

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Family Applications (7)

Application Number Title Priority Date Filing Date
TW113145018A TWI886074B (zh) 2019-12-26 2020-12-14 基板處理方法、基板處理裝置及基板處理系統
TW114115454A TWI912193B (zh) 2019-12-26 2020-12-14 基板處理方法及基板處理系統
TW113144996A TWI894051B (zh) 2019-12-26 2020-12-14 基板處理方法、基板處理裝置及基板處理系統
TW114124035A TW202543047A (zh) 2019-12-26 2020-12-14 基板處理系統、程式、及記錄媒體
TW109144004A TWI867116B (zh) 2019-12-26 2020-12-14 基板處理方法及基板處理裝置
TW113145021A TWI884111B (zh) 2019-12-26 2020-12-14 基板處理方法、基板處理裝置及基板處理系統
TW113145031A TWI892908B (zh) 2019-12-26 2020-12-14 基板處理方法、基板處理裝置及基板處理系統

Family Applications After (6)

Application Number Title Priority Date Filing Date
TW114115454A TWI912193B (zh) 2019-12-26 2020-12-14 基板處理方法及基板處理系統
TW113144996A TWI894051B (zh) 2019-12-26 2020-12-14 基板處理方法、基板處理裝置及基板處理系統
TW114124035A TW202543047A (zh) 2019-12-26 2020-12-14 基板處理系統、程式、及記錄媒體
TW109144004A TWI867116B (zh) 2019-12-26 2020-12-14 基板處理方法及基板處理裝置
TW113145021A TWI884111B (zh) 2019-12-26 2020-12-14 基板處理方法、基板處理裝置及基板處理系統
TW113145031A TWI892908B (zh) 2019-12-26 2020-12-14 基板處理方法、基板處理裝置及基板處理系統

Country Status (7)

Country Link
US (5) US12322656B2 (https=)
EP (1) EP4079445A4 (https=)
JP (7) JP7304433B2 (https=)
KR (5) KR20260004590A (https=)
CN (5) CN120637206A (https=)
TW (7) TWI886074B (https=)
WO (1) WO2021131711A1 (https=)

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TW202326839A (zh) * 2021-08-06 2023-07-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
JP7678881B2 (ja) * 2021-08-16 2025-05-16 東京エレクトロン株式会社 処理方法及び処理システム
JP7623094B2 (ja) * 2021-09-02 2025-01-28 東京エレクトロン株式会社 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置
JP7690038B2 (ja) * 2021-09-06 2025-06-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20250153272A1 (en) 2022-01-31 2025-05-15 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
WO2023176519A1 (ja) 2022-03-17 2023-09-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2023238542A1 (ja) * 2022-06-07 2023-12-14 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JPWO2024241936A1 (https=) 2023-05-25 2024-11-28
KR20260036558A (ko) * 2023-07-05 2026-03-17 도쿄엘렉트론가부시키가이샤 처리 시스템 및 처리 방법
WO2025011712A1 (de) * 2023-07-13 2025-01-16 Innolite Gmbh Vorrichtung und verfahren zur laserbestrahlung eines werkstückrohlings für die herstellung einer werkstückoberfläche
CN121890269A (zh) * 2024-08-13 2026-04-17 东京毅力科创株式会社 半导体装置的制造方法
WO2026038301A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法
WO2026038302A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法

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US20150221818A1 (en) * 2014-01-31 2015-08-06 Disco Corporation Lift-off method

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Publication number Publication date
EP4079445A1 (en) 2022-10-26
TWI867116B (zh) 2024-12-21
CN120637204A (zh) 2025-09-12
JP2025072682A (ja) 2025-05-09
JP7641434B2 (ja) 2025-03-06
TWI884111B (zh) 2025-05-11
TW202510178A (zh) 2025-03-01
JP2023126270A (ja) 2023-09-07
JP2025113476A (ja) 2025-08-01
CN114830295B (zh) 2025-06-10
JP7843396B2 (ja) 2026-04-09
KR20220120612A (ko) 2022-08-30
TW202510169A (zh) 2025-03-01
JP7641435B2 (ja) 2025-03-06
JP2025003664A (ja) 2025-01-09
TW202533365A (zh) 2025-08-16
KR20260008836A (ko) 2026-01-16
JPWO2021131711A1 (https=) 2021-07-01
TW202510207A (zh) 2025-03-01
CN120637205A (zh) 2025-09-12
US20250259898A1 (en) 2025-08-14
JP7304433B2 (ja) 2023-07-06
US20250259897A1 (en) 2025-08-14
JP7579916B2 (ja) 2024-11-08
TW202543047A (zh) 2025-11-01
JP7611456B1 (ja) 2025-01-09
CN114830295A (zh) 2022-07-29
KR20260008839A (ko) 2026-01-16
TW202510179A (zh) 2025-03-01
KR102905960B1 (ko) 2025-12-31
US20230023577A1 (en) 2023-01-26
JP2025010542A (ja) 2025-01-21
KR20260008837A (ko) 2026-01-16
WO2021131711A1 (ja) 2021-07-01
TWI892908B (zh) 2025-08-01
US20250259896A1 (en) 2025-08-14
US20250259899A1 (en) 2025-08-14
EP4079445A4 (en) 2023-12-27
US12322656B2 (en) 2025-06-03
TWI912193B (zh) 2026-01-11
JP2025003662A (ja) 2025-01-09
KR20260004590A (ko) 2026-01-08
JP7727869B2 (ja) 2025-08-21
CN120637207A (zh) 2025-09-12
CN120637206A (zh) 2025-09-12
TWI894051B (zh) 2025-08-11
TW202129823A (zh) 2021-08-01

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