JPWO2021131711A1 - - Google Patents

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Publication number
JPWO2021131711A1
JPWO2021131711A1 JP2021567196A JP2021567196A JPWO2021131711A1 JP WO2021131711 A1 JPWO2021131711 A1 JP WO2021131711A1 JP 2021567196 A JP2021567196 A JP 2021567196A JP 2021567196 A JP2021567196 A JP 2021567196A JP WO2021131711 A1 JPWO2021131711 A1 JP WO2021131711A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021567196A
Other languages
Japanese (ja)
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JP7304433B2 (ja
JPWO2021131711A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=76575431&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPWO2021131711(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of JPWO2021131711A1 publication Critical patent/JPWO2021131711A1/ja
Publication of JPWO2021131711A5 publication Critical patent/JPWO2021131711A5/ja
Priority to JP2023104005A priority Critical patent/JP7579916B2/ja
Application granted granted Critical
Publication of JP7304433B2 publication Critical patent/JP7304433B2/ja
Priority to JP2024188780A priority patent/JP7611456B1/ja
Priority to JP2024188786A priority patent/JP7641435B2/ja
Priority to JP2024188772A priority patent/JP7641434B2/ja
Priority to JP2025026963A priority patent/JP7727869B2/ja
Priority to JP2025090098A priority patent/JP7843396B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6536—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light
    • H10P14/6542—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to radiation, e.g. visible light by using coherent radiation, e.g. using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0823—Devices involving rotation of the workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting

Landscapes

  • Optics & Photonics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Laser Beam Processing (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Drying Of Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Manufacturing Optical Record Carriers (AREA)
JP2021567196A 2019-12-26 2020-12-09 基板処理方法及び基板処理装置 Active JP7304433B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2023104005A JP7579916B2 (ja) 2019-12-26 2023-06-26 基板処理方法、基板処理装置及び基板処理システム
JP2024188780A JP7611456B1 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2024188772A JP7641434B2 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2024188786A JP7641435B2 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2025026963A JP7727869B2 (ja) 2019-12-26 2025-02-21 基板処理方法及び基板処理システム
JP2025090098A JP7843396B2 (ja) 2019-12-26 2025-05-29 基板処理システム、プログラム及び記憶媒体

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019236190 2019-12-26
JP2019236190 2019-12-26
JP2020011824 2020-01-28
JP2020011824 2020-01-28
PCT/JP2020/045884 WO2021131711A1 (ja) 2019-12-26 2020-12-09 基板処理方法及び基板処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023104005A Division JP7579916B2 (ja) 2019-12-26 2023-06-26 基板処理方法、基板処理装置及び基板処理システム

Publications (3)

Publication Number Publication Date
JPWO2021131711A1 true JPWO2021131711A1 (https=) 2021-07-01
JPWO2021131711A5 JPWO2021131711A5 (https=) 2022-08-30
JP7304433B2 JP7304433B2 (ja) 2023-07-06

Family

ID=76575431

Family Applications (7)

Application Number Title Priority Date Filing Date
JP2021567196A Active JP7304433B2 (ja) 2019-12-26 2020-12-09 基板処理方法及び基板処理装置
JP2023104005A Active JP7579916B2 (ja) 2019-12-26 2023-06-26 基板処理方法、基板処理装置及び基板処理システム
JP2024188786A Active JP7641435B2 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2024188772A Active JP7641434B2 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2024188780A Active JP7611456B1 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2025026963A Active JP7727869B2 (ja) 2019-12-26 2025-02-21 基板処理方法及び基板処理システム
JP2025090098A Active JP7843396B2 (ja) 2019-12-26 2025-05-29 基板処理システム、プログラム及び記憶媒体

Family Applications After (6)

Application Number Title Priority Date Filing Date
JP2023104005A Active JP7579916B2 (ja) 2019-12-26 2023-06-26 基板処理方法、基板処理装置及び基板処理システム
JP2024188786A Active JP7641435B2 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2024188772A Active JP7641434B2 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2024188780A Active JP7611456B1 (ja) 2019-12-26 2024-10-28 基板処理方法、基板処理装置及び基板処理システム
JP2025026963A Active JP7727869B2 (ja) 2019-12-26 2025-02-21 基板処理方法及び基板処理システム
JP2025090098A Active JP7843396B2 (ja) 2019-12-26 2025-05-29 基板処理システム、プログラム及び記憶媒体

Country Status (7)

Country Link
US (5) US12322656B2 (https=)
EP (1) EP4079445A4 (https=)
JP (7) JP7304433B2 (https=)
KR (5) KR20260004590A (https=)
CN (5) CN120637206A (https=)
TW (7) TWI886074B (https=)
WO (1) WO2021131711A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202326839A (zh) * 2021-08-06 2023-07-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法
JP7678881B2 (ja) * 2021-08-16 2025-05-16 東京エレクトロン株式会社 処理方法及び処理システム
JP7623094B2 (ja) * 2021-09-02 2025-01-28 東京エレクトロン株式会社 レーザーリフトオフ用の積層基板、基板処理方法、及び基板処理装置
JP7690038B2 (ja) * 2021-09-06 2025-06-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20250153272A1 (en) 2022-01-31 2025-05-15 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
WO2023176519A1 (ja) 2022-03-17 2023-09-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2023238542A1 (ja) * 2022-06-07 2023-12-14 東京エレクトロン株式会社 基板処理システム及び基板処理方法
JPWO2024241936A1 (https=) 2023-05-25 2024-11-28
KR20260036558A (ko) * 2023-07-05 2026-03-17 도쿄엘렉트론가부시키가이샤 처리 시스템 및 처리 방법
WO2025011712A1 (de) * 2023-07-13 2025-01-16 Innolite Gmbh Vorrichtung und verfahren zur laserbestrahlung eines werkstückrohlings für die herstellung einer werkstückoberfläche
CN121890269A (zh) * 2024-08-13 2026-04-17 东京毅力科创株式会社 半导体装置的制造方法
WO2026038301A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法
WO2026038302A1 (ja) * 2024-08-13 2026-02-19 東京エレクトロン株式会社 半導体装置の製造方法

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JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2006135251A (ja) * 2004-11-09 2006-05-25 Hitachi Ltd レーザ結晶化装置
JP2013004578A (ja) * 2011-06-13 2013-01-07 Hitachi High-Tech Control Systems Corp ウェーハ接合強度検査装置及び方法
JP2013125764A (ja) * 2011-12-13 2013-06-24 Toshiba Corp 半導体装置およびその製造方法
JP2015144192A (ja) * 2014-01-31 2015-08-06 株式会社ディスコ リフトオフ方法
JP2017084910A (ja) * 2015-10-26 2017-05-18 東京応化工業株式会社 支持体分離方法
JP2018174084A (ja) * 2017-03-31 2018-11-08 株式会社半導体エネルギー研究所 素子、半導体装置、発光装置、表示装置、剥離方法、半導体装置の作製方法、発光装置の作製方法及び表示装置の作製方法

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JP5398332B2 (ja) * 2009-04-16 2014-01-29 信越ポリマー株式会社 半導体ウェーハの製造方法及びその装置
TWI610374B (zh) * 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
JP2015032690A (ja) * 2013-08-02 2015-02-16 株式会社ディスコ 積層ウェーハの加工方法
JP6307022B2 (ja) * 2014-03-05 2018-04-04 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記録媒体
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DE102015112151A1 (de) * 2015-07-24 2017-02-09 Lpkf Laser & Electronics Ag Verfahren und Vorrichtung zur Laserbearbeitung eines Substrates mit mehrfacher Ablenkung einer Laserstrahlung
CN108780734A (zh) * 2016-01-20 2018-11-09 麻省理工学院 载体基板上器件的制造
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JP6966281B2 (ja) * 2017-09-29 2021-11-10 東レエンジニアリング株式会社 転写基板、及び転写方法
WO2019092893A1 (ja) * 2017-11-10 2019-05-16 シャープ株式会社 半導体モジュール、表示装置、及び半導体モジュールの製造方法
KR102760744B1 (ko) * 2018-04-27 2025-02-03 도쿄엘렉트론가부시키가이샤 기판 처리 시스템 및 기판 처리 방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10125929A (ja) * 1996-08-27 1998-05-15 Seiko Epson Corp 剥離方法
JP2006135251A (ja) * 2004-11-09 2006-05-25 Hitachi Ltd レーザ結晶化装置
JP2013004578A (ja) * 2011-06-13 2013-01-07 Hitachi High-Tech Control Systems Corp ウェーハ接合強度検査装置及び方法
JP2013125764A (ja) * 2011-12-13 2013-06-24 Toshiba Corp 半導体装置およびその製造方法
JP2015144192A (ja) * 2014-01-31 2015-08-06 株式会社ディスコ リフトオフ方法
JP2017084910A (ja) * 2015-10-26 2017-05-18 東京応化工業株式会社 支持体分離方法
JP2018174084A (ja) * 2017-03-31 2018-11-08 株式会社半導体エネルギー研究所 素子、半導体装置、発光装置、表示装置、剥離方法、半導体装置の作製方法、発光装置の作製方法及び表示装置の作製方法

Also Published As

Publication number Publication date
EP4079445A1 (en) 2022-10-26
TWI867116B (zh) 2024-12-21
CN120637204A (zh) 2025-09-12
JP2025072682A (ja) 2025-05-09
JP7641434B2 (ja) 2025-03-06
TWI884111B (zh) 2025-05-11
TW202510178A (zh) 2025-03-01
JP2023126270A (ja) 2023-09-07
JP2025113476A (ja) 2025-08-01
CN114830295B (zh) 2025-06-10
JP7843396B2 (ja) 2026-04-09
KR20220120612A (ko) 2022-08-30
TW202510169A (zh) 2025-03-01
JP7641435B2 (ja) 2025-03-06
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