WO2021121024A1 - 应用于薄膜沉积装置的托盘 - Google Patents

应用于薄膜沉积装置的托盘 Download PDF

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Publication number
WO2021121024A1
WO2021121024A1 PCT/CN2020/133058 CN2020133058W WO2021121024A1 WO 2021121024 A1 WO2021121024 A1 WO 2021121024A1 CN 2020133058 W CN2020133058 W CN 2020133058W WO 2021121024 A1 WO2021121024 A1 WO 2021121024A1
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WO
WIPO (PCT)
Prior art keywords
tray
hole
ranges
film
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/133058
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English (en)
French (fr)
Inventor
马迎功
董博宇
郭冰亮
武学伟
武树波
赵晨光
翟洪涛
杨依龙
杨健
甄梓杨
宋玲彦
孙鲁阳
李新颖
刘玉杰
许文学
张璐
崔亚欣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to KR1020227012448A priority Critical patent/KR102476631B1/ko
Publication of WO2021121024A1 publication Critical patent/WO2021121024A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to the field of semiconductors, in particular to a tray applied to a thin film deposition device.
  • One of the objectives of the present invention is to provide a tray applied to a thin film deposition device to solve the problems in the background art. For example, in the process of film deposition, the stress of the aluminum nitride film is reduced, and the influence of the electric field and magnetic field changes caused by the conversion of the tray into a non-insulator is reduced, thereby improving the quality of the aluminum nitride film.
  • a tray applied to a thin film deposition apparatus including: a first tray body provided with a plurality of through holes for carrying wafers; and a second tray Body, stacked under the first plate body, and the size of the second plate body corresponds to the size of the first plate body; wherein the first plate body is made of a first material, so The second disc body is made of a second material, and the relative deviation between the thermal expansion coefficient of the first material and the thermal expansion coefficient of the film to be deposited is within a preset range, so as to reduce the stress effect on the wafer when the film is deposited The volume resistivity of the first material is greater than the volume resistivity of the second material, so that the first disc body is maintained as an insulator when the film is deposited on the wafer.
  • the thermal conductivity of the second material is greater than the thermal conductivity of the first material.
  • the preset range is less than 20%.
  • each of the through holes includes an upper part and a lower part sequentially arranged from the upper surface of the first plate body to the lower surface of the first plate body, and the upper part of the through hole The diameter is larger than the diameter of the lower part of the through hole.
  • the diameter of the upper part of the through hole is in the range of 100.5 mm to 102 mm, and the depth of the upper part of the through hole is in the range of 1 mm to 3 mm; the diameter of the lower part of the through hole is The range is 80 mm to 98 mm, and the depth of the lower portion of the through hole ranges from 1 mm to 3 mm.
  • the upper surface of the first plate body is provided with a chamfer structure adjacent to the through hole.
  • the chamfering structure is an inclined surface formed between the upper surface of the first plate body and the wall of the through hole, and the inclined surface is opposite to the upper surface of the first plate body.
  • the included angle formed between the surfaces ranges from 30 degrees to 60 degrees, and the length of the inclined surface in the depth direction of the through hole ranges from 0.3 mm to 2 mm.
  • the included angle is 45 degrees, and the length of the right-angle side of the chamfered structure is 0.5 mm.
  • the height of the first plate body ranges from 2 mm to 4 mm.
  • the first material is aluminum nitride
  • the second material is silicon carbide
  • the lower surface of the first disc body is provided with a plurality of first grooves; the upper surface of the second disc body is provided with a plurality of second grooves, and the plurality of first grooves
  • the shape and position of the second slot correspond to the shape and position of the plurality of first slots;
  • the tray further includes a plurality of connecting components, and each of the connecting components is located between each of the first slot and the corresponding second slot in a one-to-one correspondence, and is used to realize the first tray and the second slot.
  • the height of the connecting component ranges from 2 mm to 3 mm.
  • the tray applied to the thin film deposition device proposed in the embodiment of the present invention adopts a composite structure composed of a first tray body and a second tray body, and the first tray body is made of a first material, and the second tray body is made of a second material.
  • the relative deviation of the thermal expansion coefficient of the first material and the thermal expansion coefficient of the film to be deposited within a preset range the stress effect on the wafer deposition during film deposition can be reduced, the epitaxial uniformity can be improved, and the film can be improved Quality;
  • the volume resistivity of the first material greater than the volume resistivity of the second material, so that the first disc body is maintained as an insulator when depositing the film on the wafer, which can further improve the film quality.
  • the above-mentioned tray provided by the embodiment of the present invention can not only effectively reduce the stress during the formation of the aluminum nitride film, but also reduce the stress caused by the conversion of the tray into a non-insulator.
  • the influence of electric and magnetic field changes on the formation of aluminum nitride film, thereby improving the crystalline quality of the aluminum nitride film.
  • FIG. 1 is a schematic diagram of a tray applied to a thin film deposition apparatus according to an embodiment of the present invention.
  • Fig. 2 is a schematic diagram of a first disc body used in an embodiment of the present invention.
  • Fig. 3 is a schematic diagram of a second disc body used in an embodiment of the present invention.
  • Fig. 4 is a schematic diagram of a connecting assembly used in an embodiment of the present invention.
  • Fig. 5 is a schematic diagram of a combined tray used in an embodiment of the present invention.
  • Fig. 6 is a schematic diagram of the change of the 002 intensity of the tray used in the embodiment of the present invention relative to the number of processes.
  • first and second features are in direct contact with each other; and may also include
  • additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact.
  • present disclosure may reuse component symbols and/or labels in multiple embodiments. Such repeated use is based on the purpose of brevity and clarity, and does not in itself represent the relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms here such as “below”, “below”, “below”, “above”, “above” and similar, may be used to facilitate the description of the drawing
  • the relationship between one component or feature relative to another component or feature is shown.
  • the original meaning of these spatially-relative vocabulary covers not only the orientation shown in the figure, but also the various orientations of the device in use or operation.
  • the device may be placed in other orientations (for example, rotated 90 degrees or in other orientations), and these spatially-relative description vocabulary should be explained accordingly.
  • a magnetron sputtering device is usually used to deposit thin films on wafers.
  • aluminum nitride thin film deposition is performed on the wafer to form a piezoelectric layer or a buffer layer.
  • a mixed gas of argon and nitrogen is introduced into the vacuum chamber.
  • the argon is ionized into argon ions under the action of an electric field, and the argon ions are driven by applying a negative voltage to the target (aluminum material) Bombard the target material to obtain aluminum atoms or clusters of atoms.
  • Aluminum atoms or atomic groups migrate down to the wafer surface under the action of gravity, and at the same time combine with nitrogen atoms to form an aluminum nitride film under the action of high temperature.
  • the prior art generally uses a tray made of a single material (such as silicon carbide) to carry wafers mainly composed of materials such as alumina, silicon, silicon carbide, and the like.
  • the relationship between the thermal expansion coefficients of various materials is alumina>aluminum nitride>silicon carbide, that is, the thermal expansion coefficients of different materials are different, which results in a certain stress in the aluminum nitride film. This stress is more obvious in the high-temperature epitaxial furnace, which magnifies the stress influence during the film forming process, which leads to the difference in epitaxial uniformity and affects the quality of the aluminum nitride film.
  • the volume resistivity of silicon carbide at high temperatures is approximately 10 ⁇ cm.
  • silicon carbide will transform from an insulator to a non-insulator, and the tray that transforms into a non-insulator will cause changes in electric and magnetic fields. This change may cause the energy of ionized ions (or atoms) to reach the wafer to decrease, thereby causing the crystalline quality of the aluminum nitride film deposited on the wafer to deteriorate.
  • the embodiment of the present invention proposes a tray applied to a thin film deposition device, which can not only effectively reduce the stress during the formation of aluminum nitride thin films in the process, but also reduce the impact caused by changes in electric and magnetic fields.
  • FIG. 1 is a schematic diagram of a tray 1 applied to a thin film deposition apparatus according to an embodiment of the present invention.
  • the thin film deposition device is a magnetron sputtering device
  • the tray 1 is used to carry the wafer when the magnetron sputtering device performs a thin film deposition process on the wafer.
  • a magnetron sputtering device is used to deposit aluminum nitride thin films on wafers as an example to describe the specific structure of the tray 1 in detail.
  • the tray 1 includes a first tray 11, a second tray 12 and a plurality of connecting components 13.
  • the first plate body 11 and the second plate body 12 are superimposed on each other and have the same diameter, and the first plate body 11 is located above the second plate body 12, wherein the lower surface of the first plate body 11 is provided with a plurality of first Slots 21, the multiple first slots 21 can be distributed in multiple ways, for example, distributed along the circumferential direction of the first disk body 11 at intervals; the upper surface of the second disk body 12 is provided with the same number as the first slots 21 , Multiple second slots 22 with corresponding positions and shapes.
  • the connecting assembly 13 is used to fix the first tray 11 and the second tray 12 to form a complete tray 1.
  • the connecting assembly 13 can be fixed in many ways For example, it is arranged in the first slot 21 and the second slot 22 in the form of a tenon to clamp the first disk body 11 and the second disk body 12.
  • the first slot 21, the second slot 22, and the connecting assembly 13 are used to realize the fixed connection of the first disk body 11 and the second disk body 12.
  • the embodiment of the present invention It is not limited to this. In practical applications, according to specific needs, any other method may be used to achieve the fixed connection of the first disk body 11 and the second disk body 12, such as a detachable method such as a threaded connection or a snap connection, or Non-detachable methods such as welding and riveting.
  • the first disc body 11 is made of a first material, and the thermal expansion coefficient of the first material is approximately equal to the thermal expansion coefficient of the film, so as to reduce the stress effect on the wafer when the film is deposited.
  • the second disc body 12 is made of a second material different from the first material, wherein the volume resistivity of the first material is greater than the volume resistivity of the second material, so that the first disc body 11 can be maintained during the film deposition process It is an insulator to prevent the change of the magnetic field and electric field from affecting the quality of the film due to the first disk body 11 becoming a non-insulator.
  • the thermal conductivity coefficient of the second material is greater than the thermal conductivity coefficient of the first material to ensure that the heat energy can be smoothly transferred to the wafer placed on the first tray 11.
  • the first disc body 11 is made of aluminum nitride
  • the second disc body 12 is made of silicon carbide.
  • silicon carbide has higher thermal conductivity, flexural strength, Young's modulus and Vickers hardness, while aluminum nitride has higher thermal shock resistance and thermal expansion coefficient.
  • the volume resistivity of aluminum nitride is higher than that of silicon carbide regardless of the environment at room temperature, 300°C, or 500°C.
  • Table 1 Data comparison table of silicon carbide and aluminum nitride.
  • the first disc body 11 made of aluminum nitride has a better insulation effect
  • the second disc body 12 made of silicon carbide has a better heat conduction effect.
  • the composite tray composed of the first plate body 11 and the second plate body 12 can not only avoid the influence of stress in the forming process of aluminum nitride film, but also can maintain the characteristics of high resistivity at high temperature, thereby improving the nitrogen The quality of the aluminum film.
  • the second disk body 12 also has the advantage of easy heat conduction, and because the diameters of the first disk body 11 and the second disk body 12 are the same, not only can the first disk body 11 completely cover the second disk body 12, but also It can be ensured that the second tray body 12 can evenly conduct heat energy to various positions of the wafer placed on the first tray body 11, so that the temperature uniformity of the wafer can be ensured.
  • the first disk body 11 is made of aluminum nitride, and the film deposited on the wafer is also aluminum nitride, which is the same material as the first disk body 11, the first disk body 11 is made of aluminum nitride.
  • the thermal expansion coefficient of the material is equal to that of the film. In this way, the stress experienced by the film during the deposition process can be effectively reduced.
  • the embodiment of the present invention does not limit the use of aluminum nitride to prepare the first disk body 11.
  • the thermal expansion coefficients of the first material and the film forming material are approximately equal, the stress generated during the deposition of the film can be reduced.
  • the relative deviation between the thermal expansion coefficient of the first material and the thermal expansion coefficient of the film material is limited to a predetermined range. For example, if the thermal expansion coefficient of the first material is T A, the thermal expansion coefficient of the film material is T B, in the embodiment of the present invention defined in (T A -T B) / T A is less than 20%. In this way, even if the first material is different from the film material, the stress generated in the film deposition process can also be reduced.
  • FIG. 2 is a schematic diagram of the first disc body 11 used in the embodiment of the present invention.
  • the diameter of the first disk body 11 ranges from 300 mm to 480 mm
  • the thickness H1 ranges from 2 mm to 4 mm.
  • the diameter of the first disc body 11 is 300 mm
  • the thickness H1 of the first disc body 11 is 2 mm.
  • the first tray body 11 includes a plurality of through holes 111 for carrying wafers, and the through holes 111 can also reduce the stress generated by the heat of the wafer during the process.
  • the through hole 111 is a stepped hole, which specifically includes an upper portion 111_1 and a lower portion 111_2.
  • the upper portion 111_1 and the lower portion 111_2 are sequentially arranged from the upper surface of the first plate body 11 to the lower surface of the first plate body 11.
  • the structure of the upper part 111_1 is the appearance of the through hole 111 observed when overlooking the upper surface of the first disc body 11 as shown in FIG. 1, and the structure of the lower part 111_2 is as shown in FIG.
  • the diameter R1 of the upper part 111_1 of the through hole 111 is larger than the diameter R2 of the lower part 111_2.
  • the diameter of the wafer is generally 100 mm and the thickness is 0.6 mm. If the diameter R1 of the upper part 111_1 of the through hole 111 is too small, the wafer is not easy to put in or take out, and if the diameter R1 is too large, the wafer is easy to slide. Therefore, in this embodiment, the diameter R1 of the upper portion 111_1 of the through hole 111 ranges from 100.5 mm to 102 mm, and the depth (also referred to as the hole depth) H2 of the upper portion 111_1 ranges from 1 mm to 3 mm. Preferably, the diameter R1 of the upper portion 111_1 of the through hole 111 is 111 mm. The depth H2 of the upper portion 111_1 of the through hole 111 can be adjusted according to the thickness of the first disk body 11.
  • the diameter R2 of the lower portion 111_2 of the through hole 111 ranges from 80 mm to 98 mm, and the depth H3 ranges from 1 mm to 3 mm.
  • the diameter R2 of the lower portion 111_2 of the through hole 111 is 94 mm, and the depth H3 is 1 mm.
  • the upper surface of the first disc body 11 is provided with a chamfer structure 300 adjacent to the through hole 111.
  • the chamfer structure 300 can effectively prevent the accumulation of particles during the process and avoid crystals. Round pollution.
  • the chamfering structure 300 is an inclined surface 301 formed between the upper surface of the first disc body 11 and the wall of the through hole 111.
  • the inclined surface 301 is a flat surface and is in line with the upper surface of the first disc body 11.
  • An included angle ⁇ is formed therebetween, and the included angle ⁇ ranges from 30 degrees to 60 degrees, and the length L of the inclined surface 301 in the axial direction of the through hole 111 ranges from 0.3 mm to 2 mm.
  • the aforementioned angle ⁇ is 45 degrees
  • the length L is 0.5 mm.
  • the chamfered structure 300 is not limited to the right-angled structure composed of planes adopted in this embodiment, and it can also adopt a rounded structure composed of arcuate surfaces according to specific needs.
  • the lower surface of the first disc body 11 has a plurality of first grooves 21. If the diameter R3 of the first grooves 21 is too small, the first disc body 11 will be supported by the connecting assembly 13. If the force is too large, it will be damaged; if the diameter R3 is too large, it will interfere with the through hole 111, and it is not easy to conduct heat.
  • the diameter R3 of the first slot 21 ranges from 10 mm to 50 mm.
  • the diameter R3 of the first slot 21 is 22 mm.
  • the groove depth H4 of the first groove 21 ranges from 0.5 mm to 3 mm.
  • the groove depth H4 of the first groove 21 is 1 mm.
  • FIG. 3 is a schematic diagram of the second disc body 12 used in the embodiment of the present invention.
  • the upper surface of the second disc body 12 has a plurality of second grooves 22.
  • the shape and size of the second disc body 12 are the same as those of the first disc body 11, and the second grooves
  • the shape, position and size of 22 correspond to the shape, position and size of the first slot 21.
  • the diameter of the second disk body 12 ranges from 300 mm to 480 mm
  • the thickness H5 of the second disk body 12 ranges from 1 mm to 4 mm. If the thickness H5 of the second tray body 12 is too small, the tray 1 is easily broken, and if the thickness H5 is too large, the weight of the tray 1 is too heavy, making it difficult to handle.
  • the diameter of the second disk body 12 is the same as the diameter of the first disk body 11, for example, the diameter of the second disk body 12 is 300 mm, and the thickness H5 is 2 mm.
  • the diameter R4 of the second slot 22 ranges from 10 mm to 50 mm, and the groove depth H6 ranges from 0.5 mm to 3 mm.
  • the diameter R4 of the second slot 22 is the same as the diameter R3 of the first slot 21, for example 22 mm, and the groove depth H6 of the second slot 22 is the same as the groove depth H4 of the first slot 21, for example It is 1mm.
  • the bottom surface of the first disk body 11 has six first grooves 21, and they are evenly distributed along the circumferential direction of the first disk body 11.
  • the number and distribution of the first slot 21 and the second slot 22 are not in the present invention.
  • the connecting assembly 13 is used to connect the first tray body 11 and the second tray body 12 to form a complete tray 1.
  • the connecting assembly 13 can be fixed in many ways, for example, it is arranged in the form of a tenon in the first slot 21 and In the second slot 22, the first disc body 11 and the second disc body 12 are clamped.
  • FIG. 4 is a schematic diagram of the connecting assembly 13 used in the embodiment of the present invention.
  • the connecting assembly 13 includes a cylinder, which is clamped in the first slot 21 and the second slot 22 as a falcon.
  • the diameter R5 of the connecting component 13 ranges from 21.6 mm to 21.8 mm.
  • the diameter R5 of the connecting assembly 13 is 21.8 mm.
  • the height H7 of the connecting component 13 ranges from 2 mm to 3 mm.
  • the tray 1 may be equipped with multiple sets of connecting components 13 of different heights, and the height can be adjusted by replacing the connecting components 13 of different heights according to the technological needs.
  • the connecting assembly 13 includes a cylinder, and the first slot 21 and the second slot 22 are correspondingly cylindrical spaces.
  • the connecting component 13 as a tenon can have other shapes, and the first slot 21 and the second slot 22 can also have corresponding changes. This is not an implementation of the present invention. A limitation of the example.
  • the tray 1 shown in FIG. 5 is a structure in which the first tray body 11 and the second tray body 12 are combined with the connecting assembly 13.
  • the diameter R0 of the combined tray 1 is the same as the diameter of the first plate body 11 and the diameter of the second plate body 12.
  • the diameter R0 of the combined tray 1 is 300 mm.
  • the thickness H0 of the combined tray 1 ranges from 4 mm to 6 mm.
  • FIG. 6 is a graph showing the change of tray strength with respect to the number of processes. It can be observed from Fig. 6 that the intensity of 002 measured by the X-ray diffractometer gradually decreases for trays made of traditional single material (such as silicon carbide) as the number of processes increases, and finally the intensity of 002 drops by 15%. This data shows that as the number of processes increases, trays made of a single material (such as silicon carbide) will decrease in strength and cause the aluminum nitride crystals grown on the carrier wafer to be of slightly poor quality, such as light-emitting diodes.
  • traditional single material such as silicon carbide
  • the growth reflectivity is low, and the surface is rough without vibration, and there is a risk of fogging.
  • the strength of 002 only fluctuates by about 5%. From this, it can be seen that using the tray 1 with the composite structure proposed in the embodiment of the present invention to perform the thin film deposition process will improve the crystal quality of aluminum nitride, thereby broadening the process window for the epitaxial growth of the light-emitting diode.
  • the characterization of the thin film crystals generated using the composite structure tray 1 was tested, and Table 2 below was obtained. It can be seen from the data in Table 2 that the crystal quality of the aluminum nitride film prepared by sputtering using the composite tray 1 is improved to a certain extent compared with the tray using a traditional single material (such as silicon carbide). From the X-ray diffractometer test results, the 002 and 102 intensity values of the aluminum nitride film prepared by the composite tray 1 can be increased by more than 10%, and the crystal quality is better than the film produced by the tray using a traditional single material (such as silicon carbide) crystallization.
  • a traditional single material such as silicon carbide
  • Table 2 The data table of the thin film crystals produced with the tray 1 of the composite structure.
  • the gallium nitride wavelength uniformity (STD) is more consistent than the aluminum nitride film produced by the traditional single material (such as silicon carbide) tray.
  • the crystalline quality of the aluminum nitride film grown by using the composite tray 1 is better than that of the aluminum nitride film grown on the tray using a traditional single material (such as silicon carbide), which in turn contributes to the external nitrogen extension of the light-emitting diode.
  • the quality of gallium fluoride has been improved.
  • Table 3 Performance comparison table of gallium nitride light-emitting diode chips produced by using composite structure tray 1 and traditional single material (such as silicon carbide) trays.
  • the tray applied to the thin film deposition device proposed in the embodiment of the present invention adopts a composite structure composed of a first tray body and a second tray body, and the first tray body is made of a first material, and the second tray body is made of a first material. It is prepared by using the second material, wherein the relative deviation between the thermal expansion coefficient of the first material and the thermal expansion coefficient of the film to be deposited is within a preset range, so as to reduce the influence of stress on the wafer when depositing the film and improve the uniformity of the epitaxy.
  • the quality of the film can be improved; at the same time, the volume resistivity of the first material is greater than the volume resistivity of the second material, so that the first disk body is maintained as an insulator when the film is deposited on the wafer, and the film quality can be further improved.
  • the above-mentioned tray provided by the embodiment of the present invention can not only effectively reduce the stress during the formation of the aluminum nitride film, but also reduce the stress caused by the conversion of the tray into a non-insulator. The influence of electric and magnetic field changes on the formation of aluminum nitride film, thereby improving the crystalline quality of the aluminum nitride film.

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Abstract

一种应用于薄膜沉积装置的托盘，包括：第一盘体（11），所述第一盘体（11）上设置有多个用于承载晶圆的通孔（111）；以及第二盘体（12），叠置在第一盘体（11）的下方，且第二盘体（12）的尺寸与第一盘体（11）的尺寸相对应；第一盘体（11）采用第一材质制备，第二盘体（12）采用第二材质制备，且第一材质的热膨胀系数与待沉积薄膜的热膨胀系数的相对偏差值在预设范围内，以减少对晶圆沉积薄膜时的应力影响；第一材质的体积电阻率大于第二材质的体积电阻率，以使在对晶圆沉积薄膜时第一盘体维持为绝缘体。不仅可以有效地减小氮化铝薄膜形成时的应力，而且还可以降低由于托盘转变为非绝缘体后引起电场和磁场变化对形成氮化铝薄膜的影响。

Description

应用于薄膜沉积装置的托盘 技术领域
本发明涉及半导体领域，具体来说，是有关于一种应用于薄膜沉积装置的托盘。
背景技术
在半导体技术中，通常需要对晶圆进行氮化铝薄膜沉积以形成压电层或缓冲层。然而，在薄膜沉积的工艺过程中，一般使用单一材质，例如碳化硅(SiC)制成的托盘承载主要以蓝宝石(Al 2O 3)材质制成的晶圆。由于不同材料间的热膨胀系数不同，这导致氮化铝薄膜在高温生长过程存在一定的应力，而此应力在高温的外延炉中显现更明显，放大了氮化铝薄膜成形过程中的应力影响，从而导致了外延均一性的差异，影响氮化铝薄膜的质量；另外，碳化硅在高温(如500℃)条件下已从绝缘体转变为非绝缘体，转变为非绝缘体的托盘会引起电场和磁场的变化，这种变化可能导致离化后的离子(或原子)到达晶圆的能量减小，从而造成沉积在晶圆上的氮化铝薄膜的结晶质量变差。
发明内容
本发明的目的之一在于提供应用于薄膜沉积装置的托盘来解决背景技术中的问题。例如，在薄膜沉积的工艺过程中降低氮化铝薄膜的应力，以及，降低由于托盘转变为非绝缘体后引起电场和磁场变化带来的影响，借此提高氮化铝薄膜的质量。
依据本发明的一实施例，揭露一种应用于薄膜沉积装置的托盘，包括：第一盘体，所述第一盘体上设置有多个用于承载晶圆的通孔；以及第二盘体， 叠置在所述第一盘体的下方，且所述第二盘体的尺寸与所述第一盘体的尺寸相对应；其中，所述第一盘体采用第一材质制备，所述第二盘体采用第二材质制备，且所述第一材质的热膨胀系数与待沉积薄膜的热膨胀系数的相对偏差值在预设范围内，以减少对所述晶圆沉积薄膜时的应力影响；所述第一材质的体积电阻率大于所述第二材质的体积电阻率，以使在对所述晶圆沉积所述薄膜时所述第一盘体维持为绝缘体。
依据本发明的一实施例，所述第二材质的热传导系数大于所述第一材质的热传导系数。
依据本发明的一实施例，所述预设范围为小于20％。
依据本发明的一实施例，每个所述通孔包括自所述第一盘体的上表面至所述第一盘体的下表面依次设置的上部及下部，且所述通孔的上部的直径大于所述通孔的下部的直径。
依据本发明的一实施例，所述通孔的上部的直径的范围为100.5毫米至102毫米，所述通孔的上部的纵深的范围为1毫米至3毫米；所述通孔的下部的直径的范围为80毫米至98毫米，所述通孔的下部的纵深的范围为1毫米至3毫米。
依据本发明的一实施例，所述第一盘体的上表面在邻近所述通孔处设置有倒角结构。
依据本发明的一实施例，所述倒角结构为在所述第一盘体的上表面与所述通孔的孔壁之间形成的斜面，所述斜面与所述第一盘体的上表面之间形成的夹角的范围为30度至60度，所述斜面在所述通孔的纵深方向上的长度的范围为0.3毫米至2毫米。
依据本发明的一实施例，所述夹角为45度，所述倒角结构的直角边长度为0.5毫米。
依据本发明的一实施例，所述第一盘体的高度范围为2毫米至4毫米。
依据本发明的一实施例，所述第一材质为氮化铝，所述第二材质为碳化硅。
依据本发明的一实施例，所述第一盘体的下表面设置有多个第一槽位；所述第二盘体的上表面设置有多个第二槽位，且所述多个第二槽位的形状及位置与所述多个第一槽位的形状及位置相对应；并且，
所述托盘还包括多个连接组件，各个所述连接组件一一对应的位于各个所述第一槽位及对应的所述第二槽位之间，用于实现所述第一盘体和第二盘体的固定连接。
依据本发明的一实施例，所述连接组件的高度的范围为2毫米至3毫米。
本发明实施例提出的应用于薄膜沉积装置的托盘，其采用由第一盘体和第二盘体组成复合结构，且第一盘体采用第一材质制备，第二盘体采用第二材质制备，其中，通过使第一材质的热膨胀系数与待沉积薄膜的热膨胀系数的相对偏差值在预设范围内，以减少对晶圆沉积薄膜时的应力影响，可以提高外延均一性，从而可以提高薄膜质量；同时，通过使第一材质的体积电阻率大于第二材质的体积电阻率，以使在对晶圆沉积薄膜时第一盘体维持为绝缘体，可以进一步提高薄膜质量。以对晶圆进行氮化铝薄膜沉积工艺为例，本发明实施例提供的上述托盘，不仅可以有效地减小氮化铝薄膜形成时的应力，而且还可以降低由于托盘转变为非绝缘体后引起电场和磁场变化对形成氮化铝薄膜的影响，进而改善氮化铝薄膜的结晶质量。
附图说明
图1是本发明实施例提供的应用于薄膜沉积装置的托盘的示意图。
图2是本发明实施例采用的第一盘体的示意图。
图3是本发明实施例采用的第二盘体的示意图。
图4是本发明实施例采用的连接组件的示意图。
图5是本发明实施例采用的组合后托盘的示意图。
图6是本发明实施例采用的托盘的002强度相对工艺次数的变化示意图。
具体实施方式
以下揭示内容提供了多种实施方式或例示，其能用以实现本揭示内容的不同特征。下文所述之组件与配置的具体例子系用以简化本揭示内容。当可想见，这些叙述仅为例示，其本意并非用于限制本揭示内容。举例来说，在下文的描述中，将一第一特征形成于一第二特征上或之上，可能包括某些实施例其中所述的第一与第二特征彼此直接接触；且也可能包括某些实施例其中还有额外的组件形成于上述第一与第二特征之间，而使得第一与第二特征可能没有直接接触。此外，本揭示内容可能会在多个实施例中重复使用组件符号和/或标号。此种重复使用乃是基于简洁与清楚的目的，且其本身不代表所讨论的不同实施例和/或组态之间的关系。
再者，在此处使用空间上相对的词汇，譬如「之下」、「下方」、「低于」、「之上」、「上方」及与其相似者，可能是为了方便说明图中所绘示的一组件或特征相对于另一或多个组件或特征之间的关系。这些空间上相对的词汇其本意除了图中所绘示的方位之外，还涵盖了装置在使用或操作中所处的多种不同方位。可能将所述设备放置于其他方位(如，旋转90度或处于其他方位)，而这些空间上相对的描述词汇就应该做相应的解释。
虽然用以界定本申请较广范围的数值范围与参数皆是约略的数值，此处已尽可能精确地呈现具体实施例中的相关数值。然而，任何数值本质上不可避免地含有因个别测试方法所致的标准偏差。在此处，「约」通常系指实际数值在一特定数值或范围的正负10％、5％、1％或0.5％之内。或者是，「约」一词代表实际数值落在平均值的可接受标准误差之内，视本申请所属技术领 域中具有通常知识者的考虑而定。当可理解，除了实验例之外，或除非另有明确的说明，此处所用的所有范围、数量、数值与百分比(例如用以描述材料用量、时间长短、温度、操作条件、数量比例及其他相似者)均经过「约」的修饰。因此，除非另有相反的说明，本说明书与附随申请专利范围所揭示的数值参数皆为约略的数值，且可视需求而更动。至少应将这些数值参数理解为所指出的有效位数与套用一般进位法所得到的数值。在此处，将数值范围表示成由一端点至另一端点或介于二端点之间；除非另有说明，此处所述的数值范围皆包括端点。
在半导体技术中，通常使用磁控溅射装置来对晶圆进行薄膜沉积。特别地，对晶圆进行氮化铝薄膜沉积以形成压电层或缓冲层。在薄膜沉积的工艺过程中，向真空腔室内通入氩气和氮气的混合气体，氩气在电场的作用下被电离成氩离子，通过向靶材(铝材质)施加负电压来驱使氩离子轰击靶材，从而得到铝原子或者原子团。铝原子或者原子团在重力的作用下向下迁移至晶圆表面，同时在高温的作用下与氮原子结合形成氮化铝薄膜。然而，现有技术一般使用单一材质(如碳化硅)制成的托盘来承载主要由氧化铝、硅、碳化硅等材料组成的晶圆。各个材料间的热膨胀系数的关系为氧化铝>氮化铝>碳化硅，即，不同材料间的热膨胀系数不同，这导致氮化铝薄膜存在一定的应力。此应力在高温的外延炉中显现更明显，放大了薄膜成形过程中的应力影响，从而导致了外延均一性的差异，影响氮化铝薄膜的质量。
另外，碳化硅在高温(如500℃)的条件下其体积电阻率大致为10Ω·cm，换言之，碳化硅将从绝缘体转变为非绝缘体，而转变为非绝缘体的托盘会引起电场和磁场的变化，这种变化可能导致离化后的离子(或原子)到达晶圆的能量减小，从而造成沉积在晶圆上的氮化铝薄膜的结晶质量变差。
为了解决上述问题，本发明实施例提出一种应用于薄膜沉积装置的托盘，其不仅可以在工艺制程中有效地减小氮化铝薄膜形成时的应力，而且还 可以降低因电场和磁场变化对形成氮化铝薄膜产生的影响，进而改善氮化铝薄膜的结晶质量。
图1是本发明实施例提供的应用于薄膜沉积装置的托盘1的示意图。在本实施例中，薄膜沉积装置是一种磁控溅射装置，托盘1在磁控溅射装置对晶圆进行薄膜沉积工艺时用于承载晶圆。本实施例以磁控溅射装置对晶圆进行氮化铝薄膜沉积为例，对托盘1的具体结构进行详细说明。具体地，如图1所示，托盘1包括第一盘体11、第二盘体12以及多个连接组件13。第一盘体11与第二盘体12相互叠置，且直径相同，并且第一盘体11位于第二盘体12的上方，其中，第一盘体11的下表面设置有多个第一槽位21，多个第一槽位21的分布方式可以有多种，例如沿第一盘体11的圆周方向间隔分布；第二盘体12的上表面设置有与第一槽位21的数量、位置、形状均相对应的多个第二槽位22，连接组件13用于将第一盘体11与第二盘体12固定连接形成完整的托盘1，连接组件13的固定方式可以有多种，例如以卡榫的形式设置在第一槽位21与第二槽位22中，以将第一盘体11与第二盘体12卡接。
需要说明的是，在本实施例中，利用上述第一槽位21、第二槽位22和连接组件13实现第一盘体11和第二盘体12的固定连接，但是，本发明实施例并不局限于此，在实际应用中，根据具体需要，还可以采用其他任意方式实现第一盘体11和第二盘体12的固定连接，例如螺纹连接或者卡接等的可拆卸方式，或者焊接、铆接等的不可拆卸方式。
在本实施例中，第一盘体11是采用第一材质制备，该第一材质的热膨胀系数与薄膜的热膨胀系数大致相等，以减少对晶圆沉积薄膜时的应力影响。第二盘体12是采用与第一材质不同的第二材质制备，其中，第一材质的体积电阻率大于第二材质的体积电阻率，使得第一盘体11在沉积薄膜的过程中能够维持为绝缘体，避免因第一盘体11成为非绝缘体后引起磁场与电场变化影响了薄膜的质量。另外，第二材质的热传导系数大于第一材质的热传导系数， 以保证热能可以顺利传导至放置于第一盘体11上的晶圆。
详细来说，第一盘体11是由氮化铝制备，而第二盘体12是由碳化硅制备。参考下方表1，碳化硅与氮化铝相比，碳化硅具有较高的热传导系数、抗折强度、杨氏模量和维氏硬度，而氮化铝具有较高的耐热冲击和热膨胀系数。另外，不论在室温、300℃、500℃的环境下，氮化铝的体积电阻率均高于碳化硅的体积电阻率。
表1、碳化硅与氮化铝的数据对比表。
Figure PCTCN2020133058-appb-000001
因此，使用氮化铝制备的第一盘体11具有较好的绝缘效果，而使用碳化硅制备的第二盘体12具有较好的导热匀热效果。如此一来，采用第一盘体11与第二盘体12组成的复合托盘既可以避免氮化铝薄膜成形过程中的应力影响，又可以在高温下保持高电阻率的特性，从而可以提高氮化铝薄膜的质量。此外，由于第二盘体12还具有容易导热的优点，且由于第一盘体11与 第二盘体12的直径相同，不仅可以使第一盘体11完全覆盖第二盘体12，而且还可以保证第二盘体12能够将热能均匀地传导至置于第一盘体11上的晶圆的各个位置，从而可以保证晶圆的温度均匀性。
另外，对于氮化铝薄膜沉积工艺，由于第一盘体11是使用氮化铝制备，而晶圆上所沉积的薄膜同样是氮化铝，与第一盘体11的材质相同，故而第一材质与薄膜的热膨胀系数相等。如此一来，可有效地降低薄膜在沉积的过程中所感受的应力。
然而，本发明实施例并不限定以氮化铝来制备第一盘体11。本技术领域人员应能理解，只要第一材质与形成薄膜材质的热膨胀系数大致相等，即可降低薄膜在沉积的过程中所产生的应力。在本发明实施例中，第一材质的热膨胀系数与薄膜材质的热膨胀系数的相对偏差值限定在一预设范围内。举例来说，假设第一材质的热膨胀系数为T A、薄膜材质的热膨胀系数为T B，则在本发明实施例中限定(T A-T B)/T A小于20％。如此一来，即便第一材质与薄膜材质不同，也同样可以降低薄膜在沉积的过程中所产生的应力。
图2是本发明实施例采用的第一盘体11的示意图。在本实施例中，第一盘体11的直径的范围为300mm至480mm，厚度H1的范围为2mm至4mm。为了避免盘体破碎，第一盘体11的尺寸越大，厚度H1则相对越厚。但是，考虑到工艺对第一盘体11的导热性的要求，上述厚度H1不宜过厚，以避免因厚度过大导致盘体导热性较差，而影响薄膜结晶的生成。优选地，第一盘体11的直径是300mm，第一盘体11的厚度H1是2mm。
如图1所示，第一盘体11包括多个用于承载晶圆的通孔111，该通孔111还可以降低晶圆在工艺过程中由于受热产生的应力。详细来说，如图2所示，通孔111为阶梯孔，具体包括上部111_1和下部111_2，上部111_1和下部111_2自第一盘体11的上表面至第一盘体11的下表面依次设置，例如，上部111_1的结构为如图1中所示的俯瞰第一盘体11的上表面时所观察到的通 孔111的样貌，而下部111_2的结构为如图1中所示的仰视第一盘体11的下表面时所观察到的通孔111的样貌。
在本实施例中，通孔111的上部111_1的直径R1大于下部111_2的直径R2。晶圆的直径一般为100mm，厚度为0.6mm，若通孔111的上部111_1的直径R1太小，则晶圆不易放入或取出，若直径R1太大则晶圆容易滑动。因此，在本实施例中，通孔111的上部111_1的直径R1的范围为100.5mm至102mm，上部111_1的纵深(也可称为孔深)H2的范围为1mm至3mm。优选地，通孔111的上部111_1的直径R1为111mm。通孔111的上部111_1的纵深H2则可以依据第一盘体11的厚度进行调整。
另外，通孔111的下部111_2的直径R2若太小则不利于传导热量，直径R2若太大则无法承载晶圆。因此，在本实施例中，通孔111的下部111_2的直径R2的范围为80mm至98mm，纵深H3的范围为1mm至3mm。优选地，通孔111的下部111_2的直径R2为94mm，纵深H3为1mm。
进一步地，如图2所示，第一盘体11的上表面在邻近通孔111处设置有一圈倒角结构300，该倒角结构300可在工艺过程中有效地防止颗粒的堆积，避免晶圆的污染。在本实施例中，倒角结构300为在第一盘体11的上表面与通孔111的孔壁之间形成的斜面301，该斜面301为平面，且与第一盘体11的上表面之间形成夹角θ，该夹角θ的范围为30度至60度，并且斜面301在通孔111的轴向上的长度L的范围为0.3mm至2mm。优选地，上述角度θ是45度，长度L是0.5mm。
当然，在实际应用中，倒角结构300并不局限于本实施例所采用的由平面构成的直角结构，根据具体需要，其还可以采用由弧面构成的圆角结构。
如图1所示，第一盘体11的下表面具有多个第一槽位21，该第一槽位21的直径R3若偏小将导致第一盘体11因受到连接组件13的支撑作用力偏大而损坏；直径R3若偏大则会与通孔111互相干涉，同时不易于导热。在 本实施例中，第一槽位21的直径R3的范围为10mm至50mm。优选地，第一槽位21的直径R3是22mm。在本实施例中，第一槽位21的槽深H4的范围为0.5mm至3mm。优选地，第一槽位21的槽深H4是1mm。
图3是本发明实施例采用的第二盘体12的示意图。第二盘体12的上表面具有多个第二槽位22，如图1所示，第二盘体12的形状和尺寸与第一盘体11的形状和尺寸相同，并且，第二槽位22的形状、位置和尺寸均与第一槽位21的形状、位置和尺寸相对应。在本实施例中，第二盘体12的直径的范围为300mm至480mm，第二盘体12的厚度H5的范围为1mm至4mm。第二盘体12的厚度H5若偏小则托盘1容易破碎，厚度H5若偏大则托盘1的重量过重，不易操作。优选地，第二盘体12的直径与第一盘体11的直径相同，例如第二盘体12的直径是300mm，厚度H5是2mm。
与第一槽位21相对应的，在本实施例中，第二槽位22的直径R4的范围为10mm至50mm，槽深H6的范围为0.5mm至3mm。优选地，第二槽位22的直径R4与第一槽位21的直径R3相同，例如是22mm，并且，第二槽位22的槽深H6与第一槽位21的槽深H4相同，例如是1mm。
在本实施例中，第一盘体11的下表面有6个第一槽位21，且沿第一盘体11的圆周方向均匀分布。相应地，第二盘体12的上表面有6个第二槽位22，且与6个第一槽位21一一对应。然而，本技术领域具有通常知识者应能轻易理解，只要能稳定的连接第一盘体11与第二盘体12，第一槽位21与第二槽位22的数量和分布方式并非本发明实施例的一限制。
连接组件13用于将第一盘体11与第二盘体12固定连接形成完整的托盘1，连接组件13的固定方式可以有多种，例如以卡榫的形式设置在第一槽位21与第二槽位22中，以将第一盘体11与第二盘体12卡接。参考图4，图4是本发明实施例采用的连接组件13的示意图。连接组件13包括圆柱，其作为卡隼卡接在第一槽位21与第二槽位22中，其中，若该圆柱的直径R5 偏小则第一盘体11与第二盘体12之间容易滑动，若直径R5偏大则不容易卡入第一槽位21和第二槽位22之间。在本实施例中，连接组件13的直径R5的范围为21.6mm至21.8mm。优选地，连接组件13的直径R5是21.8mm。在本实施例中，连接组件13的高度H7的范围为2mm至3mm。此外，通过调节连接组件13的高度H7，可以调节第一盘体11与靶材之间的距离，即，调节晶圆与靶材之间的距离，从而扩大了工艺调试窗口。在实际应用中，托盘1可配备多组不同高度的连接组件13，并且依照工艺需要通过更换不同高度的连接组件13来进行高度调整。
需注意的是，在上述实施例中连接组件13包括圆柱，且第一槽位21与第二槽位22也相应地为圆柱状空间。然而，本技术领域具有通常知识者应能轻易理解，作为卡榫的连接组件13可以是其他形状，而第一槽位21与第二槽位22也可以有相应的变化，此并非本发明实施例的一限制。
再次参考图1，第一盘体11以及第二盘体12的上表面均具有一标识符号(例如图示中的三角形)，第一盘体11以及第二盘体12的标识符号对齐后，第一槽位21与第二槽位22也相应地对齐，从而即可通过连接组件13将第一盘体11以及第二盘体12固定连接。图5所示的托盘1是将第一盘体11与第二盘体12以连接组件13组合后的结构。在本实施例中，组合后的托盘1的直径R0与第一盘体11的直径、第二盘体12的直径相同。优选地，组合后的托盘1的直径R0是300mm。在本实施例中，组合后的托盘1的厚度H0的范围为4mm至6mm。
通过实验发现，托盘1的强度随着工艺次数的增多会有所改变，进而影响薄膜结晶的质量。图6为托盘强度相对于工艺次数的变化图。从图6可观察到，传统单一材质(如碳化硅)制成的托盘随着工艺次数的增多，使用X射线衍射仪测量到的002强度逐渐下降，最终002强度下降达15％。此数据表明，随着工艺次数的增多，使用单一材质(如碳化硅)制成的托盘会因其 强度下降而导致承载晶圆所生长的氮化铝晶体质量略差，例如可能导致发光二极体在外延生长氮化镓时生长反射率较低，表面粗糙不起振，进而有雾化的风险。与之相对比，本发明实施例提出的复合结构的托盘1随着工艺次数的增多，002强度仅有约5％的波动。由此可知，使用本发明实施例提出的复合结构的托盘1进行薄膜沉积工艺将改善氮化铝的晶体质量，进而拓宽发光二极体外延生长的工艺窗口。
另外，检测使用复合结构的托盘1生成的薄膜结晶的表征，并得到下方表2。由表2数据可知，利用复合托盘1进行溅射制备的氮化铝薄膜的晶体质量相对于使用传统单一材质(如碳化硅)的托盘有一定的提升。从X射线衍射仪测试结果来看，复合托盘1所制备的氮化铝薄膜的002和102强度数值可以提升10％以上，晶体质量优于使用传统单一材质(如碳化硅)的托盘生成的薄膜结晶。
表2、用复合结构的托盘1生成的薄膜结晶的数据表。
Figure PCTCN2020133058-appb-000002
进一步的，比较使用复合结构的托盘1以及传统单一材质(如碳化硅)的托盘产生的氮化镓发光二极体芯片的性能，并得到下方表3。由表3可知，借助复合结构的托盘1上增设的倒角结构300和通孔111，可以在生长工艺过程中降低薄膜的应力，从而改善了外延过程中的氮化镓的翘曲现象，因此， 使用复合托盘1所生成的氮化铝薄膜作为缓冲层时，氮化镓波长均匀性(STD)相比使用传统单一材质(如碳化硅)的托盘所生成的氮化铝薄膜的一致性更佳，并且，反向电压和抗静电通过率等都有大幅度的提升。因此，使用复合托盘1所生长的氮化铝薄膜的结晶质量要优于使用传统单一材质(如碳化硅)的托盘所生成的氮化铝薄膜的结晶质量，进而促成了发光二极体外延氮化镓质量的提升。
表3、使用复合结构的托盘1以及传统单一材质(如碳化硅)的托盘产生的氮化镓发光二极体芯片的性能对比表。
Figure PCTCN2020133058-appb-000003
综上所述，本发明实施例提出的应用于薄膜沉积装置的托盘，其采用由第一盘体和第二盘体组成复合结构，且第一盘体采用第一材质制备，第二盘体采用第二材质制备，其中，通过使第一材质的热膨胀系数与待沉积薄膜的热膨胀系数的相对偏差值在预设范围内，以减少对晶圆沉积薄膜时的应力影响，可以提高外延均一性，从而可以提高薄膜质量；同时，通过使第一材质的体积电阻率大于第二材质的体积电阻率，以使在对晶圆沉积薄膜时第一盘体维持为绝缘体，可以进一步提高薄膜质量。以对晶圆进行氮化铝薄膜沉积工艺为例，本发明实施例提供的上述托盘，不仅可以有效地减小氮化铝薄膜形成时的应力，而且还可以降低由于托盘转变为非绝缘体后引起电场和磁场变化对形成氮化铝薄膜的影响，进而改善氮化铝薄膜的结晶质量。

Claims (12)

  1. 一种应用于薄膜沉积装置的托盘，其特征在于，包括：
    第一盘体，所述第一盘体上设置有多个用于承载晶圆的通孔；以及
    第二盘体，叠置在所述第一盘体的下方，且所述第二盘体的尺寸与所述第一盘体的尺寸相对应；其中，所述第一盘体采用第一材质制备，所述第二盘体采用第二材质制备，且所述第一材质的热膨胀系数与待沉积薄膜的热膨胀系数的相对偏差值在预设范围内，以减少对所述晶圆沉积薄膜时的应力影响；所述第一材质的体积电阻率大于所述第二材质的体积电阻率，以使在对所述晶圆沉积所述薄膜时所述第一盘体维持为绝缘体。
  2. 如权利要求1所述的托盘，其特征在于，所述第二材质的热传导系数大于所述第一材质的热传导系数。
  3. 如权利要求1所述的托盘，其特征在于，所述预设范围为小于20％。
  4. 如权利要求1所述的托盘，其特征在于，每个所述通孔包括自所述第一盘体的上表面至所述第一盘体的下表面依次设置的上部及下部，且所述通孔的上部的直径大于所述通孔的下部的直径。
  5. 如权利要求4所述的托盘，其特征在于，所述通孔的上部的直径的范围为100.5毫米至102毫米，所述通孔的上部的纵深的范围为1毫米至3毫米；所述通孔的下部的直径的范围为80毫米至98毫米，所述通孔的下部的纵深的范围为1毫米至3毫米。
  6. 如权利要求4所述的托盘，其特征在于，所述第一盘体的上表面在邻近所述通孔处设置有倒角结构。
  7. 如权利要求6所述的托盘，其特征在于，所述倒角结构为在所述第一盘体的上表面与所述通孔的孔壁之间形成的斜面，所述斜面与所述第一盘体的上表面之间形成的夹角的范围为30度至60度，所述斜面在所述通孔的纵深方向上的长度的范围为0.3毫米至2毫米。
  8. 如权利要求7所述的托盘，其特征在于，所述夹角为45度，所述倒 角结构的直角边长度为0.5毫米。
  9. 如权利要求1所述的托盘，其特征在于，所述第一盘体的高度范围为2毫米至4毫米。
  10. 如权利要求1所述的托盘，其特征在于，所述第一材质为氮化铝，所述第二材质为碳化硅。
  11. 如权利要求1-10任意一项所述的托盘，其特征在于，所述第一盘体的下表面设置有多个第一槽位；所述第二盘体的上表面设置有多个第二槽位，且所述多个第二槽位的形状及位置与所述多个第一槽位的形状及位置相对应；并且，
    所述托盘还包括多个连接组件，各个所述连接组件一一对应的位于各个所述第一槽位及对应的所述第二槽位之间，用于实现所述第一盘体和第二盘体的固定连接。
  12. 如权利要求11所述的托盘，其特征在于，所述连接组件的高度的范围为2毫米至3毫米。
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