WO2021065036A1 - ワイヤ接合構造とそれに用いられるボンディングワイヤ及び半導体装置 - Google Patents

ワイヤ接合構造とそれに用いられるボンディングワイヤ及び半導体装置 Download PDF

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WO2021065036A1
WO2021065036A1 PCT/JP2020/010119 JP2020010119W WO2021065036A1 WO 2021065036 A1 WO2021065036 A1 WO 2021065036A1 JP 2020010119 W JP2020010119 W JP 2020010119W WO 2021065036 A1 WO2021065036 A1 WO 2021065036A1
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Prior art keywords
gold
wire
bonding
silver
electrode
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English (en)
French (fr)
Japanese (ja)
Inventor
優希 安徳
雄祐 ▲崎▼田
将太 川野
▲祐▼佳 平井
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Priority to CN202080064592.7A priority Critical patent/CN114502754B/zh
Priority to JP2021551112A priority patent/JP7269361B2/ja
Priority to KR1020227008680A priority patent/KR102766811B1/ko
Priority to DE112020004723.7T priority patent/DE112020004723T5/de
Publication of WO2021065036A1 publication Critical patent/WO2021065036A1/ja
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    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H10W72/07555—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in materials
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/521—Structures or relative sizes of bond wires
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    • H10W72/551—Materials of bond wires
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    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
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    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H10W80/743—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding having disposition changed during the connecting
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    • H10W72/531—Shapes of wire connectors
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    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
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    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
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    • H10W90/00—Package configurations
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present invention relates to a wire bonding structure and a bonding wire and a semiconductor device used therein.
  • the electrodes of the semiconductor chip and the external electrodes of the circuit base material such as the lead frame and the circuit board are connected by, for example, a bonding wire.
  • a bonding wire for example, one end of the bonding wire is bonded to the electrode of the semiconductor chip (first bonding) by a method called ball bonding, and the other end of the bonding wire is bonded to the external electrode of the circuit substrate by a method called wedge bonding (first bonding).
  • Second bonding is common.
  • ball bonding one end of the bonding wire is melted by discharge or the like and solidified into a spherical shape by surface tension or the like to form a ball.
  • the solidified ball is called a free air ball (FREE Air Ball: FAB), and is connected to an electrode of a semiconductor chip by a thermocompression bonding method or the like combined with ultrasonic waves to form a wire bonding structure.
  • FAB free air ball
  • the structure in which the FAB provided on the bonding wire is bonded to the electrode is referred to as a wire bonding structure here.
  • the semiconductor device is configured by resin-sealing the semiconductor chip to which the bonding wire is connected together with the bonding wire and a part of the circuit base material.
  • semiconductor devices have been required to have low power consumption and high signal processing speed, and bonding wires used in such semiconductor devices have low electrical resistance (specific resistance) (for example, purity 99.99). It is required to have a mass% of 4NAu wire or less) and to maintain a low specific resistance for a long time even in a harsh environment, that is, to have high reliability. High reliability means that it is not corroded (sulfurized or oxidized) even in a hot and humid environment, and its electrical resistance does not increase for a long period of time.
  • the gold wire generally used conventionally has a high material cost, and the copper wire and the coated copper wire have a problem that the material is hard and damages the semiconductor chip.
  • silver wire is suitable as a bonding wire because of its low cost and softness
  • sterling silver wire has a problem that its surface is sulfurized when left in the atmosphere for a long period of time. Since the silver alloy bonding wire commercialized as a measure against sulfurization contains metal elements such as palladium and gold to pure silver, the silver content is 90% by mass to 97% by mass. Although the measures against sulfurization have been slightly improved, the silver alloy bonding wire has a drawback that the specific resistance becomes high due to the influence of the content of additive elements, and does not sufficiently meet the demands of recent semiconductor devices.
  • a silver alloy wire that reduces the content of precious metals and has a specific resistance equivalent to that of gold wire has been proposed, but this time there is a problem of corrosion resistance, so the molded resin that constitutes the semiconductor device, that is, high reliability It is difficult to meet the high reliability evaluation criteria because it is necessary to select a resin that does not contain elements that affect the bonding wire and the intermetallic compound generated at the interface between the bonding wire and the electrode. There is also.
  • a coating layer such as platinum group element such as palladium or gold having high corrosion resistance on the surface of the silver wire.
  • a coating layer such as a platinum group element or gold can suppress sulfide on the surface of silver wire if it remains as a solid that does not melt. Therefore, it is effective when bonding without melting as in wedge bonding (second bonding).
  • first joining As described above, the bonding wire is formed by melting one end of the wire by electric discharge or the like and solidifying it into a spherical shape by surface tension or the like to form a ball.
  • the solidified ball is called a free air ball (FAB), and the FAB is connected to the electrodes of the semiconductor chip by a thermocompression bonding method or the like combined with ultrasonic waves to form a wire bonding structure.
  • Wedge joining without forming balls reduces the joining area and weakens the joining strength. Therefore, a method of increasing the joining force by making the joining area into a ball shape and widening the joining area is generally used. Since the entire wire coated with platinum group element or gold is melted during FAB formation, the coated platinum group element or gold is also melted almost at the same time, although there is a time lag due to the difference in melting point, etc. Gold enters and the concentration of platinum group elements and gold on the ball surface becomes relatively low.
  • Patent Document 1 describes a gold-silver alloy wire containing Ag in the range of 11 to 18.5% by mass and the balance being gold and unavoidable impurities, and Cu, Pd, and Pt. At least one kind is 0.01 to 4% by mass in total, at least one kind of Ca, In and rare earth elements is 0.0005 to 0.05% by mass in total, or at least one kind of Mn and Cr is 0. A gold-silver alloy wire contained in the range of 01 to 0.2% by mass is disclosed. Patent Document 1 provides a gold-silver alloy wire in which a specific amount of silver is contained to improve the bonding reliability of silver with an aluminum electrode and to reduce the cost. However, since the main component is still gold, the problem of high material cost is not solved because it is more expensive than silver wire, silver alloy wire, coated silver wire and the like. In addition to cost issues, there is also concern that resistivity will increase.
  • Patent Document 2 describes that one or more of Pd, Au, Zn, Pt, Ni, Sn or one or more of Pd, Au, Zn, Pt, Ni, Sn on the surface of Ag or Ag alloy wire.
  • a bonding wire having a wire coating layer having an alloy or an oxide or nitride of these metals is disclosed.
  • Patent Document 2 uses an Ag or Ag alloy wire having a coating layer for connection in a power semiconductor device, and by using wedge bonding instead of ball bonding, an intermetallic compound at the bonding interface between the Al electrode and Ag wire. It is disclosed that the formation of the metal is suppressed and the joint reliability is enhanced.
  • Patent Document 2 presupposes wedge bonding of Ag wires as described above, it does not form FAB in which the coated wires must be melt-solidified. Therefore, the constituent elements of the coating layer are contained in the Ag wires as the core material. Not considering getting in. Therefore, Patent Document 2 does not consider the constituent elements of the bonding interface when the FAB is bonded to the electrode, and does not consider improving the reliability based on the constituent elements of the bonding interface. Furthermore, the configuration for suppressing the entry of the constituent elements into the Ag wire is not disclosed.
  • Patent Document 3 has an Ag wire and an Au film covering the Ag wire, and the Au film is Na, Se, Ca, Si, Ni, Be, K, C. , Al, Ti, Rb, Cs, Mg, Sr, Ba, La, Y, Ce.
  • the shape of the FAB is not axisymmetric with the Au-coated Ag wire, the above-mentioned element is contained in the Au film to suppress the concentration of the arc discharge at one point, and an arc is generated from the entire surface. It is disclosed that the shape of the FAB is stabilized by allowing the FAB to be formed.
  • Patent Document 3 also does not consider that Au of the coating layer enters the Ag line during FAB formation, and does not disclose a configuration for suppressing the entry of Au into the Ag line. Therefore, Patent Document 3 not only does not suggest that an intermetal compound is formed at the bonding interface between the Al electrode and the Ag wire when the gold-coated silver wire is used, and the bonding reliability is lowered, and further, Al The configuration for enhancing the bonding reliability between the electrode and the Ag wire is also not disclosed. Further, the above-mentioned additive elements may adversely affect the characteristics of the wire itself, the formability of the coating layer, and the like depending on the content thereof. Therefore, there is a demand for a technique for suppressing the entry of Au into the Ag wire and improving the reliability of the wire bonding structure without adversely affecting the characteristics of the wire itself and the formability of the coating layer.
  • the problem to be solved by the present invention is that the bonding wire and the aluminum electrode can be bonded for a long period of time even in a harsh environment while suppressing an increase in the specific resistance even when the bonding wire and the aluminum electrode are bonded at a low material cost. It is an object of the present invention to provide a wire bonding structure capable of maintaining bonding reliability, and a bonding wire and a semiconductor device used for the wire bonding structure.
  • the wire bonding structure of the present invention includes an electrode containing aluminum as a main component, a bonding wire, and a ball compression portion provided at one end of the bonding wire and bonded to the electrode.
  • the bonding wire has a core material containing silver as a main component and a coating layer provided on the surface of the core material and containing gold as a main component, and has sulfur, tellurium, and selenium.
  • a gold-coated silver bonding wire containing at least one Group 15 and 16 element selected from, arsenic, and antimony, having a gold concentration of 2.0% by mass or more and 7.0% by mass or less with respect to the entire wire.
  • the total concentration of the 15th and 16th group elements is 4% by mass or more and 80% by mass or less, and the concentration of gold is the total amount of gold, silver and aluminum in the vicinity of the junction interface between the electrode and the ball compression portion.
  • the problem is solved by providing a gold-enriched bonding region of 5 atomic% or more.
  • the gold-coated silver bonding wire of the present invention is a gold-coated bonding wire used in the wire connection structure of the present invention, and the gold-coated bonding wire is formed on a core material containing silver as a main component and a surface of the core material.
  • the gold-coated silver bonding wire is provided and has a coating layer containing gold as a main component, and the gold-coated silver bonding wire contains at least one Group 15 and 16 element selected from sulfur, tellurium, selenium, arsenic, and antimony.
  • the concentration of gold is 2.0% by mass or more and 7.0% by mass or less, and the concentrations of Group 15 and 16 elements are 4% by mass or more and 80% by mass or less with respect to the entire wire.
  • gold is placed in the vicinity of the bonding interface between the electrode and the ball compression portion.
  • the semiconductor device of the present invention comprises one or more semiconductor chips having at least one electrode, a lead frame or a substrate, between the electrodes of the semiconductor chip and the lead frame, the electrodes of the semiconductor chip and the substrate. At least one selected from between the electrodes and between the electrodes of the plurality of semiconductor chips is provided with a core material containing silver as a main component and a coating layer provided on the surface of the core material and containing gold as a main component.
  • the semiconductor device is connected by a bonding wire, and the connection structure between the electrode and the bonding wire includes a ball compression portion provided to bond one end of the bonding wire to the electrode, and is provided with the electrode.
  • a gold-concentrated bonding region having a gold concentration of 5 atomic% or more with respect to the total amount of gold, silver, and aluminum is provided in the vicinity of the bonding interface with the ball compression portion.
  • the concentration of gold in the vicinity of the bonding interface between the electrode and the ball compression portion is gold, silver, and aluminum while suppressing an increase in the specific resistance of the bonding wire.
  • a gold-concentrated bonding region of 5 atomic% or more can be provided with respect to the total amount.
  • FIG. 1 is a cross-sectional view showing a wire bonding structure of an embodiment.
  • the wire bonding structure 1 of the embodiment includes an electrode 2 containing aluminum (Al) as a main component, and a bonding wire 3 having one end bonded to the electrode 2.
  • the bonding wire 3 has a core material (also referred to as a silver core material) 4 containing silver (Ag) as a main component, and a coating layer 5 provided on the surface of the core material 4 and containing gold (Au) as a main component. It is a gold-coated silver bonding wire.
  • Electrode 2 contains aluminum as a main component.
  • Examples of the configuration of the electrode 2 include, but are not limited to, an electrode provided on the semiconductor chip.
  • the electrode 2 may be made of pure aluminum, or may be made of an aluminum alloy in which an additive element is added to aluminum.
  • the electrode 2 contains aluminum as a main component so as not to impair the function as the aluminum electrode 2.
  • the electrode 2 is composed of Al-0.5% copper (Cu) and Al-1.0% silicon (Si) -copper (Cu), but is not limited thereto.
  • the wire bonding structure 1 of the embodiment includes a ball compression unit 6 provided so as to bond one end of the gold-coated silver bonding wire 3 to the electrode 2.
  • the ball compression unit 6 bonds the wire through a penetrating jig called a capillary when the ball is bonded, but when the wire is pressed against the electrode to be bonded, the ball is deformed into the shape inside the capillary. The part that is processed and shaped.
  • the FAB formed by melting one end of the bonding wire 3 by discharge or the like and solidifying it into a spherical shape by surface tension or the like is formed by pressing the FAB against the electrode 2 by a thermocompression bonding method using ultrasonic waves or the like to bond the bonding wire 3.
  • a gold-enriched bonding region 7 having a gold concentration of 5 atomic% or more with respect to the total amount of gold, silver, and aluminum is provided in the vicinity of the bonding interface between the electrode 2 and the ball compression unit 6.
  • the gold concentration in the vicinity of the bonding interface is increased and the silver concentration is relatively increased. It can be kept low. Therefore, it is possible to improve the joint reliability between the electrode 2 and the ball compression unit 6. That is, when the ball compression portion 6 is formed using a silver alloy bonding wire having a silver purity of 98% by mass or more (hereinafter referred to as a high-purity silver alloy wire), the silver concentration in the vicinity of the bonding interface becomes high and is easily corroded.
  • An intermetallic compound of silver and aluminum (such as Ag 3 Al having a ratio of silver and aluminum of 3: 1) is likely to be formed.
  • the high-purity silver-alloy wire precious metals such as gold and palladium contained 2 wt% at the maximum, since the intermetallic compound of the corrosion resistance of low silver and aluminum, such as Ag 3 Al is produced, the molding resin The metal-metal compound is corroded by the halogen such as chlorine (Cl) contained in the metal and the moisture absorbed by the mold resin, and a poor energization is likely to occur between the electrode 2 and the ball compression unit 6.
  • the Ag 3 Al intermetallic compound is suppressed, so that the ratio of silver to aluminum is 2: 1.
  • Ag 2 Al intermetallic compound is likely to be produced. Since the Ag 2 Al intermetallic compound is superior in corrosion resistance to the Ag 3 Al intermetallic compound, the bonding reliability between the electrode 2 and the ball compression portion 6 can be improved.
  • the gold present in the gold-enriched bonding region 7 acts as a barrier against changes over time in a harsh environment, such as silver migration and diffusion, and provides a corrosion-resistant Ag 2 Al intermetallic compound. Can be maintained.
  • gold produces aluminum and an intermetallic compound of gold and aluminum having better corrosion resistance (for example, an Au 4 Al intermetallic compound), which contributes to further improvement of bonding reliability.
  • an Au 4 Al intermetallic compound for example, an Au 4 Al intermetallic compound
  • the gold concentration is 5 atomic% or more with respect to the total amount of gold, silver, and aluminum. If the concentration of gold in the gold-enriched bonding region 7 is less than 5 atomic% with respect to the total amount of gold, silver and aluminum, the effect of suppressing corrosion (sulfurization and oxidation) by gold cannot be sufficiently obtained. Since the silver concentration is relatively increased, the Ag 3 Al metal-metal compound is likely to be formed, and the bonding reliability between the electrode 2 and the ball compression portion 6 is lowered.
  • the gold concentration in the gold-enriched bonding region 7 with respect to the total amount of gold, silver and aluminum is more preferably 5 atomic% or more, and further preferably 10 atomic% or more. It is determined by the ratio of the thickness of the coating layer 5 to the diameter of the silver core material 4.
  • the gold-concentrated bonding region 7 described above further comprises at least one element selected from palladium (Pd), platinum (Pt), germanium (Ge), indium (In), copper (Cu), and nickel (Ni) (hereinafter,).
  • M element is preferably contained.
  • the M element can be contained in, for example, the silver core material 4.
  • the M element is preferably contained so that its content is 0.2 atomic% or more and 2.0 atomic% or less with respect to the entire wire. If it is less than 0.2 atomic%, the effect of further improving the bonding reliability by the M element cannot be sufficiently obtained, and if it exceeds 2.0 atomic%, the specific resistance of the silver core material 4 may be increased. is there.
  • the analysis method of the gold-enriched bonding region will be described in detail by taking as an example the case where an aluminum electrode is used as the bonding target. The same applies when an electrode containing aluminum and an element other than aluminum is used.
  • Free air balls are formed using gold-coated silver bonding wires and ball-bonded onto aluminum electrodes.
  • the ball compression portion joined to the aluminum electrode is cut so that the surface parallel to the center line in the longitudinal direction of the wire is exposed.
  • This cut surface is line-analyzed from a predetermined position on the wire side in a direction substantially perpendicular to the joint surface (depth direction).
  • FE-SEM / EDX field emission scanning electron microscope / energy dispersive X-ray spectroscopic analysis
  • the cut surface according to the analysis includes the center line in the longitudinal direction of the wire or is formed so as to be as close to the center line as possible.
  • the cut surface of the ball joint can be made as follows.
  • a PBGA32PIN frame is used as the lead frame, and a substantially square semiconductor chip is bonded to the central portion of the frame.
  • the aluminum electrode on the semiconductor chip and the external electrode on the frame are wire-bonded with a gold-coated silver bonding wire to prepare a measurement sample.
  • a gold-coated silver bonding wire is ball-bonded (first bonding) to an aluminum electrode on the semiconductor chip, and wedge-bonded (second bonding) to a lead frame. Since many electrodes are usually arranged in multiple rows on a chip, for example, bonding wires are bonded to one row (4) of electrodes at equal intervals, and the other 3 rows (3 sides) are similarly bonded. Join.
  • a total of 16 aluminum electrodes are ball-bonded. Including wedge bonding to the lead frame, there are a total of 32 sets of wire bonding.
  • the conditions for forming the free air ball are, for example, when the wire diameter of the gold-coated silver bonding wire is 10 to 30 ⁇ m, the discharge current value is 30 to 90 mA, and the free air ball diameter is 1.5 to 2.
  • the bonder device for example, a commercially available product such as a bonder device (fully automatic bonder: IConn ProCu PLUS) manufactured by K & S Co., Ltd. can be used.
  • the bonder device settings are that the discharge time is 50 to 1000 ⁇ s, the EFO-Gap is 25 to 45 mil (about 635 to 1143 ⁇ m), and the tail length is 6 to 12 mil (about 152 to 305 ⁇ m). preferable.
  • the conditions may be the same as above, for example, the free air ball diameter may be the same as the above.
  • the ball joining condition is, for example, for a free air ball having a wire wire diameter of 20 ⁇ m and a ball diameter of 36 ⁇ m, the height from the constricted portion of the ball compression portion to the junction interface side. Can be adjusted by a bonder device so that the maximum width in the direction substantially parallel to the joint surface is approximately 45 ⁇ m, and the ball share strength is approximately 15 gf or more.
  • the conditions for the second joining are, for example, a crimping force of 60 gf, an ultrasonic output of 90 mAmps, and an ultrasonic output time of 15 ms.
  • the loop length from the first joint to the second joint can be set to 2.0 mm.
  • the semiconductor chip containing a total of 16 sets of joints formed above is molded with a sealing resin by a molding machine.
  • the mold has hardened, the molded part is cut from the frame, and further, the vicinity of one row (one side) of the ball joint in the mold part is cut.
  • the cut mold is placed in a cylindrical mold in a direction in which the cross section of the ball joint can be polished, and the embedded resin is poured and a curing agent is added to cure the cut mold.
  • the cured cylindrical resin containing the semiconductor chip is roughly polished with a polishing machine so that the vicinity of the center of the ball joint is exposed as much as possible.
  • the final polishing finish and the surface including the center of the ball (the surface that passes through the center line of the wire and is parallel to the center line) is just exposed and is at the position of the analysis surface.
  • the desired portion is line-analyzed from the ball side to the electrode side by FE-SEM / EDX.
  • the line analysis conditions are, for example, an acceleration voltage of 6 keV, a measurement area of ⁇ 0.18 ⁇ m, and a measurement interval of 0.02 ⁇ m.
  • field emission is performed from the ball compression portion 6 side toward the electrode 2 side via the bonding interface on the analysis surface (polished cross section) of the measurement sample described above.
  • the gold-enriched junction region 7 can be confirmed by line analysis by energy dispersive X-ray analysis (EDX: Energy Dispersive X-ray Samplery) attached to a type scanning electron microscope (FE-SEM: Field Emission-Scanning Electron Microscope).
  • the line analysis conditions are an acceleration voltage of 6 keV, a measurement length of 2 ⁇ m, a measurement interval of 0.03 ⁇ m, and a measurement time of 60 seconds using FE-SEM SU8220 manufactured by Hitachi High-Technologies Corporation and XFlash (R) 5060FQ manufactured by Bruker Corporation. ..
  • concentration profile of the line analysis if the gold concentration is 5 atomic% or more with respect to the total amount of silver, gold and aluminum, it can be determined that the gold-enriched bonding region 7 is formed.
  • the ratio of gold to the total of gold, silver, and aluminum is in the vicinity of the bonding surface where the free air ball and the electrode are contacted and bonded, that is, in the region where aluminum, silver, and gold coexist. It can be evaluated as a predetermined range of 5.0 atomic% or more, preferably 10.0 atomic% or more.
  • the ratio of gold to the total of gold, silver, and aluminum is 5.0 atomic% or more, preferably 10.0 atoms.
  • a predetermined range of% or more can be evaluated as a gold-enriched bonding region.
  • the reason why the aluminum concentration is measured in the range of more than 5.0 atomic% and 95.0 atomic% or less is that the analytical value of the place where aluminum does not exist does not become 0 atomic% due to the influence of noise in the analysis. This is because the analytical value of the aluminum-only portion may not be 100 atomic%.
  • FIG. 2 shows an example of the line analysis result by EDX.
  • the vertical axis represents the concentration (atomic%) of each element
  • the horizontal axis represents the measurement distance ( ⁇ m) in the measurement sample.
  • the region from the measurement distance of about 2.2 ⁇ m to about 2.6 ⁇ m on the horizontal axis of FIG. 2 is the region near the bonding interface, and the region where the gold concentration is 5.0 atomic% or more, that is, gold There is a junction thickening region.
  • the peak concentration of gold shows about 15.0 atomic%. Therefore, in the wire bonding structure 1 having the concentration profile shown in FIG. 2, it can be determined that the gold-concentrated bonding region 7 exists in the vicinity of the bonding interface between the electrode 2 and the ball compression unit 6.
  • FIG. 2 there is a region where the gold concentration is low (around 2.4 ⁇ m on the horizontal axis) near the bonding interface, but an Ag 2 Al intermetallic compound having strong corrosion resistance is generated from the concentration ratio of silver and aluminum in the vicinity. It is presumed.
  • the formation range of the gold-enriched bonding region 7 described above is preferably, but not limited to, the entire area of the bonding interface between the electrode 2 and the ball compression portion 6. That is, as shown in FIG. 3, the gold-enriched bonding region 7 has a gold-enriched bonding region with respect to the maximum width Y of the ball compression unit 6 in order to improve the bonding reliability between the electrode 2 and the ball compression unit 6. 7 may be formed at least between both outer peripheral portions of the ball compression portion 6 and the position of 1/8 (indicated by the line X1 and the line X2).
  • the maximum width Y of the ball compression portion 6 is a cross-sectional view obtained by cutting the joint structure between the electrode 2 and the ball compression portion 6 shown in FIG.
  • the width between both outermost ends (indicated by the line X) of the ball compression portion 6 is shown.
  • the maximum width (line Y) of the ball compression portion 6 is divided into eight equal parts from both outermost ends (line X), and the position is 1/8 from both outermost ends (line X1 and line X2). It suffices that at least the gold-enriched bonding region 7 is formed in the meantime. By forming the gold-enriched bonding region 7 at such a position, it is possible to suppress a decrease in bonding reliability between the electrode 2 and the ball compression portion 6 due to air, moisture, or the like entering the bonding interface.
  • the formation range of the gold-enriched joint region 7 is formed so that the total occupancy rate is 25% or more with respect to the maximum width Y of the ball compression portion 6 described above. It turned out that it is preferable.
  • the occupancy rate of the gold-enriched joint region 7 referred to here is the occupancy rate of the gold-enriched joint region 7 when the formation region of the gold-enriched joint region 7 is analyzed in the cross-sectional view of the joint structure between the electrode 2 and the ball compression portion 6 shown in FIG. This means that the formation region of the gold-concentrated joint region 7 is 25% or more with respect to the maximum width Y of the ball compression portion 6.
  • the electrode 2 is formed by air, moisture, or the like invading the bonding interface. It is possible to suppress a decrease in bonding reliability with the ball compression unit 6.
  • the occupancy rate of the gold-enriched bonding region 7 with respect to the maximum width Y of the ball compression unit 6 may be at least 25%, more preferably 40% or more, and further preferably 50% or more. ..
  • the abundance of an element to be measured is usually measured as the X-ray intensity emitted from the element when the measurement target is irradiated with an electron beam, and the intensity is measured on an EPMA image. It is common to display with color mapping reflected in the color. That is, the points where the element to be measured does not exist are displayed in black, and are displayed in gradations such as "white, red, yellow, green, blue, and black" as an example in descending order of the existence probability of the elements.
  • the point with the lowest gold intensity that is, the darkest point (blue part close to black) among the places on the EPMA image where the strength due to gold is observed although it is not black.
  • the gold concentration is 5.0 atomic% or more
  • the region displayed in a color stronger than the above-mentioned portion displayed other than the above can be specified as the gold-enriched junction region.
  • the gold concentration observed in the line analysis was 5.0 atomic% or more, and the intensity was equal to or higher than the measurement point on the EPMA. Whether the location is set so that it can be identified as an intensity difference (color on the image) is visually determined.
  • the core material (silver core material) 4 containing silver as a main component mainly constitutes the bonding wire 3 and bears the function of the bonding wire 3.
  • a core material 4 is preferably made of sterling silver, but in some cases, it may be made of a silver alloy in which an additive element is added to silver.
  • the core material 4 contains silver as a main component so as not to impair the function as a silver bonding wire.
  • the fact that silver is contained as a main component means that the core material 4 contains at least 50% by mass or more of silver.
  • the core material 4 is composed of a silver alloy
  • a silver alloy containing at least one element selected from rhodium (Rh), germanium (Ge), gallium (Ga) and indium (In) is preferably applied, but is not limited thereto.
  • the additive element in the silver alloy constituting the core material 4 is effective in improving the bondability with the electrode, the bond reliability, the mechanical strength, and the like. However, if the content of the additive element is too large, the specific resistance of the core material 4 may increase and the function as a silver bonding wire may deteriorate. Therefore, the content of the additive element of the gold-coated silver bonding wire 3 is set so as to be within the specific resistance of the gold wire (purity 99.99% by mass (4N)), for example, 2.3 ⁇ ⁇ cm or less. Is preferable.
  • the core material 4 When the core material 4 is made of either sterling silver or a silver alloy, it may contain unavoidable impurities, but the amount of impurities in which the specific resistance of the gold-coated silver bonding wire 3 is in the range of 2.3 ⁇ ⁇ cm or less. Is preferable. By applying such a silver core material 4, the value of specific resistance required for the bonding wire 3 can be satisfied. It is often thought that a silver alloy containing more silver, which has a lower resistivity than gold, has a lower resistivity, but a silver alloy has a higher resistivity due to alloying than pure gold (4N). There are many.
  • the specific resistance of the wire is preferably measured by the four-terminal method, and is measured using, for example, a milliohm meter (Yokogawa Hewlett-Packard Co., Ltd., model number 4328A) or the like.
  • the coating layer 5 contains gold as a main component.
  • the inclusion of gold as a main component means that the coating layer 5 contains 50% by mass or more of gold.
  • the gold content of the coating layer 5 can be measured from the surface of the bonding wire 3 by quantitative analysis of the outermost surface of the wire by Auger electron spectroscopy (AES) or the like.
  • AES Auger electron spectroscopy
  • the gold content referred to here is a value with respect to the total amount of detected metal elements, and does not include carbon, oxygen, etc. existing on the surface due to adsorption or the like.
  • the gold-coated silver bonding wire 3 described above preferably has a wire diameter of 13 ⁇ m or more and 30 ⁇ m or less. If the wire diameter of the wire 3 is less than 13 ⁇ m, when wire bonding is performed using the bonding wire 3 at the time of manufacturing a semiconductor device, the strength, conductivity, etc. may decrease, and the reliability of wire bonding may decrease. There is. If the wire diameter of the wire 3 exceeds 30 ⁇ m, the number of bonding wires cannot be increased and the possibility of contact (short circuit) with the adjacent bonding wire increases.
  • the thickness of the coating layer 5 is preferably 50 nm or more and 260 nm or less depending on the wire diameter.
  • the thickness of the coating layer 5 indicates the thickness in the depth direction from the surface of the wire 3 in the region containing gold as a main component toward the core material 4 in the vertical direction. If the thickness of the coating layer 5 is less than 50 nm, the bonding reliability between the gold-coated silver bonding wire 3 and the electrode 2 may not be sufficiently enhanced by the coating layer 5 containing gold as a main component. If the thickness of the coating layer 5 exceeds 260 nm, the formability of the coating layer 5 may decrease.
  • the thickness of the coating layer 5 is preferably set according to the wire diameter of the gold-coated silver bonding wire 3.
  • the thickness of the coating layer 5 shall be measured as follows. That is, in the gold-coated silver bonding wire 3, the element concentration analysis is performed from the surface of the gold-coated silver bonding wire 3 in the depth direction by AES, and the position is 50% when the maximum value of the gold content existing near the surface is set to 100%. The portion to be formed is defined as a boundary portion, and the region from the boundary portion to the surface is determined as the thickness of the coating layer 5.
  • the element distribution in the depth direction from the surface of the gold-coated silver bonding wire 3 can be measured by AES analysis. For example, concentration measurement by AES analysis is effective as a means for analyzing the concentration of each element of the coating layer 5 from the surface of the wire 1 toward the silver core material 4.
  • an Auger electron spectrometer (trade name: JAMP-9500F) manufactured by JEOL Ltd. is used, the acceleration voltage of the primary electron beam is set to 10 kV, the irradiation current is set to 50 nA, and the beam diameter is set to about 4 ⁇ m ⁇ , and the Ar ion sputtering rate is set to SiO2.
  • the conversion value was about 3.0 nm / min.
  • the method of forming the gold-enriched bonding region 7 in the vicinity of the bonding interface between the electrode 2 and the ball compression portion 6 is not particularly limited.
  • a gold-enriched region for example, when forming the FAB at one end of the gold-coated silver bonding wire 3, a gold-enriched region (surface gold-enriched region) is formed on the surface of the FAB. Can be achieved by.
  • the concentration of gold in the vicinity of the junction interface between the electrode 2 and the ball compression portion 6 is gold, silver, and aluminum.
  • a gold-enriched bonding region 7 of 5 atomic% or more with respect to the total amount can be formed. The detailed forming method will be described later.
  • a method of controlling and forming the bonding wire will be described. That is, a method of joining the FAB having the gold-enriched region formed on the surface to the electrode 2 to form the ball compression portion 6 will be described.
  • a FAB 8 is formed at one end of the gold-coated silver bonding wire 3.
  • the conditions for forming the FAB8 for example, when the wire diameter of the gold-coated silver bonding wire 3 is 13 ⁇ m or more and 30 ⁇ m or less, the discharge current value is 30 mA or more and 120 mA or less according to the wire diameter, and the diameter of the FAB8 is 1 of the wire diameter. .
  • the bonder device for example, a commercially available product such as a bonder device (fully automatic bonder: IConn PLUS) manufactured by Curic and Sopha can be used.
  • the device settings include a discharge time of 50 ⁇ s or more and 1000 ⁇ s or less, an EFO-Gap of 20 mil or more and 40 mil or less (about 635 ⁇ m or more and 1143 ⁇ m or less), and a tail length of 6 mil or more and 12 mil or less (about 152 ⁇ m or more and 305 ⁇ m or less). ) Is preferably applied.
  • the conditions may be the same as those of the bonder device, for example, the condition that the diameter of the FAB 8 is the same as that of the bonder device.
  • the gold coating layer 5 coated on the surface of the silver bonding wire is melt-solidified to produce FAB, the gold on the surface enters the inside of the ball, and as a result, the gold concentration on the ball surface decreases, and the silver concentration is relatively high.
  • the inventors have formed a ball in the same manner as a solid wire. Gold is also fixed on the surface of the ball to reduce the silver concentration relatively, and when bonded to an aluminum electrode, the formation of an Ag 2 Al metal-metal compound that is resistant to corrosion, and is extremely stable against chemical reactions.
  • the gold-enriched bonding region 7 cannot be formed with good reproducibility in the vicinity of the bonding interface between the electrode 2 and the ball compression portion 6.
  • the thickness of the gold layer is simply increased, the ratio of the thickness of the gold layer is small when compared with the diameter of the silver core material, so that it is not possible to prevent gold from entering the silver core material.
  • the gold concentration on the surface after the formation of the FAB is increased based only on the thickness of the gold layer, the state becomes closer to the gold wire rather than the gold-coated silver wire, and the material cost increases significantly.
  • the thickness of the gold layer exceeds 7% by mass in terms of the gold concentration in the entire wire, the ball forming property of FAB, that is, the possibility of eccentricity of the ball increases.
  • the inventors have clarified a solution for suppressing the entry of gold into the silver core material 4 at the time of forming the FAB8.
  • Suppression of gold entering the silver core material 4 is performed by sulfur (S), selenium (Se), tellurium (Te), arsenic (As), and antimony (Sb) in the gold constituting the coating layer 5. It has been found that it is obtained by containing at least one selected Group 15 and 16 elements. Further, it has been found that the total amount of the 15th and 16th group elements is preferably 4% by mass or more and 80% by mass or less with respect to the entire wire.
  • the 15th and 16th elements in the coating layer 5 are melted in the process of forming the FAB8. It is presumed that it acts on the surface tension of the coating layer 5 in the state and contributes to the formation of the gold-enriched region.
  • the surface tension of molten silver is smaller than the surface tension of molten gold, and the flow (marangoni convection) generated by the difference in surface tension is from the smaller surface tension to the larger surface tension, that is, melting.
  • the molten gold moves inside the ball.
  • the surface tension of the molten coating layer 5 is smaller than that of molten silver, and the direction of malangoni convection is reversed from the molten gold to the molten silver. , The molten gold does not get inside the FAB8. Therefore, it was speculated that the surface gold-enriched region 9 could be formed on the surface of FAB8.
  • the timing at which the effects of the 15th and 16th elements in the coating layer 5 described above are exhibited and the process of forming the surface gold-enriched region will be described along with the process of forming the FAB8.
  • a wire having a predetermined length is unwound to generate an arc discharge between the tip of the cut bonding wire 3 and the discharge torch, and the wire. It is formed by melting the tip. Since the bonding wire 3 is deformed by being crushed by the capillary at the time of the second bonding, the coating layer 5 does not exist in the region where the bonding wire 3 and the capillary come into contact with each other, and the core material 4 is exposed.
  • the ball in which only the tip of the wire with the core material 4 exposed is melted has a portion where the coating layer 5 does not exist, so that the gold-concentrated region is not formed.
  • the 15th and 16th elements in the coating layer 5 act on the surface tension at the time of melting and melt.
  • Gold is present in the surface region of the FAB8 without getting inside the FAB8. Eventually, it grows from a small ball to a large ball, but gold is continuously supplied from the bonding wire 3. The molten gold is alloyed with the core material 4 melted by the heat of the arc discharge.
  • gold is preferably contained in the range of 2% by mass or more and 7% by mass or less with respect to the total amount of the wire 3.
  • the gold content with respect to the total amount of the wire 3 is less than 2% by mass, the ball compression portion 6 and the electrode 2 formed by using the FAB 8 formed on the gold-coated silver bonding wire 3 mainly composed of the silver core material 4
  • the joint reliability between the wire and the wire cannot be sufficiently improved.
  • the gold content with respect to the total amount of the wire 3 exceeds 7% by mass, the shape of the ball at the time of melting, and eventually the shape of the FAB8, deteriorates due to eccentricity or the like, and the shape and reliability of the ball compression portion 6 are impaired.
  • the material cost of the gold-coated silver bonding wire 3 increases. Although it depends on the diameter of the wire 3 and the thickness of the coating layer 5, the gold content with respect to the total amount of the wire 3 is more preferably 3.5% by mass or more.
  • the Group 15 and Group 16 elements are contained in the range of 4 mass ppm or more and 80 mass ppm or less with respect to the total amount of the gold-coated silver bonding wire 3 described above. Is preferable.
  • the content of the 15th and 16th elements with respect to the total amount of the wire 3 is less than 4% by mass, the gold enrichment effect at the time of forming the FAB8 and the resulting formability of the surface gold enrichment region can be sufficiently obtained. I can't.
  • the content of the 15th and 16th group elements with respect to the total amount of the wire 3 exceeds 80% by mass ppm, cracks and cracks are likely to occur in the coating layer 5, and the workability and productivity such as disconnection during wire drawing are lowered. However, it becomes difficult to obtain the gold-coated silver bonding wire 3 having a desired wire diameter. Two or more kinds of Group 15 and Group 16 elements may be mixed and applied, and in that case, the total amount of the Group 15 and Group 16 elements is adjusted to be within the above-mentioned content range.
  • the surface region of the FAB8, for example, the FAB8 formed by the Group 15 and 16 elements contained in the coating layer 5 is used.
  • the surface gold-enriched region 9 is formed in a range of 10 ⁇ m or less (or 10% or less with respect to the diameter of FAB8) in the depth direction from the surface, although it depends on the diameter of the surface. Since the surface gold-enriched region 9 is maintained even after the FAB 8 and the electrode 2 are bonded, the gold-enriched bonding region 7 can be formed in the vicinity of the bonding interface between the electrode 2 and the ball compression portion 6. That is, it becomes possible to obtain a wire bonding structure 1 having a gold-enriched bonding region 7.
  • the method and process of forming the gold-enriched bonding region 7 described above are merely examples, and the present invention is not limited thereto.
  • the gold-concentrated bonding region 7 can be formed even under the following conditions. Specifically, the gold-concentrated bonding region 7 can be formed by depositing gold on the surface of the aluminum electrode. However, gold coating on the electrodes is not recommended because it is very costly in terms of material cost and manufacturing cost.
  • the wire bonding structure 1 of the embodiment enhances the bonding reliability between the electrode 2 and the ball compression unit 6 described above by providing a gold-concentrated bonding region 7 in the vicinity of the bonding interface between the electrode 2 and the ball compression unit 6. Therefore, the method of forming the gold-enriched bonding region 7 is not particularly limited.
  • the method of calculating the gold content and the content of the 15th and 16th group elements in the total amount of the gold-coated silver bonding wire 3 will be described below.
  • the gold content is calculated.
  • the bonding wire 3 is put into dilute nitric acid to dissolve the core material 4, and then the solution is collected. Hydrochloric acid is added to this solution, and ultrapure water is used to make a constant volume solution.
  • the coating layer 5 is dissolved in rare aqua regia and made into a constant volume solution with ultrapure water.
  • the gold content is measured by performing quantitative analysis of gold in these constant volumes by ICP-AES (ICP-AES: Inductively Coupled Plasma Atomic Emission Spectroscopy).
  • the contents of the 15th and 16th group elements are calculated.
  • the bonding wire 3 is put into dilute nitric acid, the core material 4 is melted, and then the coating layer 5 is extracted. Further, after the coating layer 5 is thermally decomposed with dilute aqua regia, the measurement is carried out using a solution having a constant volume with ultrapure water. Quantitative analysis of selenium, tellurium, arsenic, and antimony in this constant volume solution is measured using ICP mass spectrometry (ICP-MS: Inductively Coupled Plasma Mass Spectrometry).
  • the content of selenium, tellurium, arsenic, and antimony in the core material 4 is measured by ICP-MS or ICP-AES using a liquid obtained by putting the bonding wire 3 in dilute nitric acid and melting the core material 4. Then, the gold content and the content of selenium, tellurium, arsenic, and antimony in the entire bonding wire 3 are calculated from the gold content of the coating layer 5 and the core material 4 and the contents of selenium, tellurium, arsenic, and antimony. ..
  • a hydride generator is attached to ICP-AES to generate hydrides of selenium, tellurium, arsenic, and antimony for analysis.
  • the sulfur (S) content of the core material 4 and the coating layer 5 is measured with respect to the bonding wire 3 by using a combustion infrared absorption method.
  • the weight of the bonding wire 3 per measurement is preferably 0.5 g or more. If the sample is difficult to dissolve, a combustion improver may be used if necessary.
  • the manufacturing method of the bonding wire will be described.
  • silver is used as the core material 4
  • silver of a predetermined purity is dissolved, and when a silver alloy is used, silver of a predetermined purity is dissolved together with an additive element to form a silver core material or a silver alloy.
  • a core material is obtained.
  • a heating furnace such as an arc heating furnace, a high frequency heating furnace, a resistance heating furnace, or a continuous casting furnace is used.
  • the melted core material is cast and solidified from a heating furnace so that it has a predetermined wire diameter, or the melted core material is cast into a mold to make an ingot, and the ingot is rolled and then a predetermined wire.
  • a silver wire (including a sterling silver wire and a silver alloy wire) is obtained by drawing the wire to a diameter.
  • a plating method (wet method) or a vapor deposition method (dry method) is used.
  • the plating method may be either an electrolytic plating method or an electroless plating method. Electroplating such as strike plating and flash plating is preferable because the plating speed is high, and when applied to gold plating, the adhesion of the gold layer to the silver wire is good.
  • the gold plating solution contains a plating additive containing at least one selected from sulfur, selenium, tellurium, arsenic, and antimony. Use the plated solution.
  • the content of Group 15 and Group 16 elements in the coating layer 5 can be adjusted by adjusting the type and amount of the plating additive, and the content of Group 15 and Group 16 elements in the wire 3 can be adjusted. Can be adjusted.
  • vapor deposition method physical vapor deposition (PVD) such as a sputtering method, an ion plating method, or a vacuum vapor deposition method, or chemical vapor deposition (CVD) such as thermal CVD, plasma CVD, or metalorganic vapor deposition (MOCVD) is used.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • thermal CVD plasma CVD
  • MOCVD metalorganic vapor deposition
  • a gold-coated silver bonding wire 3 having a coating layer 5 on the surface of the silver core material 4 is manufactured by drawing a silver wire material coated with a gold layer to the final wire diameter and heat-treating it if necessary.
  • the wire drawing process may be performed at the stage of the silver wire rod, or the silver wire rod may be wire drawn to a certain diameter to form a gold layer and then drawn to the final wire diameter.
  • the wire drawing process and the heat treatment may be performed step by step.
  • the processing rate of the wire drawing process is determined according to the final wire diameter of the gold-coated silver bonding wire 3 to be manufactured, the application, and the like.
  • the processing rate of wire drawing is preferably 90% or more as the processing rate until the silver wire is processed to the final wire diameter.
  • This processing rate can be calculated as a reduction rate of the wire cross-sectional area. It is preferable that the wire drawing process is performed by using a plurality of diamond dies so as to gradually reduce the wire diameter.
  • the surface reduction rate (processing rate) per diamond die is preferably 5% or more and 15% or less.
  • the final heat treatment is performed in consideration of the strain removing heat treatment for removing the strain of the metal structure remaining inside the wire 3 and the required wire characteristics in the final wire diameter.
  • the strain removing heat treatment it is preferable to determine the temperature and time in consideration of the required wire characteristics.
  • heat treatment may be performed according to the purpose at any stage of wire production. Examples of such a heat treatment include a strain removing heat treatment in the wire drawing process, a diffusion heat treatment for increasing the bonding strength after forming a gold layer, and the like. By performing the diffusion heat treatment, the bonding strength between the core material 4 and the coating layer 5 can be improved.
  • the heat treatment a run-run heat treatment in which a wire is passed through a heating atmosphere heated to a predetermined temperature to perform the heat treatment is preferable because the heat treatment conditions can be easily adjusted.
  • the heat treatment time can be calculated from the passing speed of the wire and the passing distance of the wire in the heating container.
  • An electric furnace or the like is used as the heating container.
  • the FAB 8 is formed at one end of the gold-coated silver bonding wire 3 described above.
  • the FAB 8 is formed by generating an arc discharge between the tip of the wire 3 and the discharge torch and melting the tip of the wire 3.
  • the FAB8 formed at one end of the gold-coated silver bonding wire 3 is bonded to the electrode 2 by a thermocompression bonding method using ultrasonic waves or the like.
  • the ball compression portion 6 joined to the electrode 2 can be formed by joining the FAB 8 in contact with the electrode 2 to the electrode 2 by ultrasonic waves and heat while deforming the FAB 8 in contact with the electrode 2 by the pressure at the time of thermocompression bonding using ultrasonic waves. ..
  • FIGS. 5 to 7 are cross-sectional views showing a stage before resin sealing of the semiconductor device of the embodiment
  • FIG. 6 is a cross-sectional view showing a stage of resin sealing of the semiconductor device of the embodiment
  • FIG. 7 is a semiconductor device of the embodiment. It is a cross-sectional view which shows the junction
  • the semiconductor device 10 of the embodiment is arranged on the circuit board 12 having the external electrode 11 and at least one.
  • a plurality of semiconductor chips 14 (14A, 14B, 14C) each having an electrode (chip electrode) 13 are connected to an external electrode 11 of the circuit board 12, an electrode 13 of the semiconductor chip 14, and an electrode 13 of the plurality of semiconductor chips 14.
  • the bonding wire 15 is provided.
  • the circuit board 12 for example, a printed wiring board or a ceramic circuit board having a wiring network provided on the surface or inside of an insulating base material such as a resin material or a ceramic material is used.
  • FIGS. 5 and 6 show a semiconductor device 10 in which a plurality of semiconductor chips 14 are mounted on a circuit board 12, but the configuration of the semiconductor device 10 is not limited to this.
  • the semiconductor chip may be mounted on a lead frame, in which case the electrodes of the semiconductor chip are connected to an outer lead that functions as an external electrode of the lead frame via a bonding wire 15.
  • the number of semiconductor chips mounted on the circuit board or lead frame may be one or a plurality.
  • the bonding wire 15 is applied to at least one of the external electrode 11 of the circuit board 12 and the electrode 13 of the semiconductor chip 14, the lead frame and the electrode of the semiconductor chip, and the electrodes 13 of the plurality of semiconductor chips 14.
  • the semiconductor chips 14A and 14C are mounted in the chip mounting region of the circuit board 12 via the die bonding material 16.
  • the semiconductor chip 14B is mounted on the semiconductor chip 14A via a die bonding material 16.
  • One electrode 13 of the semiconductor chip 14A is connected to the external electrode 11 of the circuit board 12 via the bonding wire 15, and the other electrode 13 is connected to the electrode 13 of the semiconductor chip 14B via the bonding wire 15.
  • the other electrode 13 is connected to the electrode 13 of the semiconductor chip 14C via a bonding wire 15.
  • the other electrode 13 of the semiconductor chip 14B is connected to the external electrode 11 of the circuit board 12 via the bonding wire 15.
  • the other electrode 13 of the semiconductor chip 14C is connected to the external electrode 11 of the circuit board 12 via the bonding wire 15.
  • the semiconductor chip 14 includes an integrated circuit (IC) made of a silicon (Si) semiconductor, a compound semiconductor, or the like.
  • the chip electrode 13 is made of, for example, an aluminum electrode having an aluminum (Al) layer and an aluminum alloy layer such as AlSiCu or AlCu on the outermost surface.
  • the aluminum electrode is formed by, for example, coating the surface of a silicon (Si) substrate with an electrode material such as Al or an Al alloy so as to electrically connect to the internal wiring.
  • the semiconductor chip 14 communicates data with an external device via the external electrode 11 and the bonding wire 15, and supplies electric power from the external device.
  • the external electrode 11 of the circuit board 12 is electrically connected to the electrode 13 of the semiconductor chip 14 mounted on the circuit board 12 via the bonding wire 15.
  • one end of the bonding wire 15 is ball-bonded (first bonded) to the chip electrode 13, and the other end is wedge-bonded (second bonded) to the external electrode 11.
  • One end of the bonding wire 15 is ball-bonded (first bonded) to the chip electrode 13 of the semiconductor chip 14, and the other end is the other.
  • Wedge bonding (second bonding) is performed on the chip electrode 13 of the semiconductor chip 14 of the above.
  • the electrode 13 of the semiconductor chip 14 includes a form in which a bump is previously bonded to an electrode pad on the semiconductor chip 14 (not shown).
  • the wire bonding structure 1 shown in FIG. 1 is formed. That is, as shown in FIG. 7, a wire bonding structure 1 having a bonding wire 15, a chip electrode 13, and a ball compression portion 6 bonded to the chip electrode 13 is formed.
  • the semiconductor device 10 is manufactured by forming the sealing resin layer 17 on the circuit base material 12 so that the plurality of semiconductor chips 14 and the bonding wires 15 are resin-sealed.
  • Specific examples of the semiconductor device 10 include logic ICs, analog ICs, discrete semiconductors, semiconductor memories, optical semiconductors, and the like.
  • the wire bonding structure 1 of the above-described embodiment is applied to the wire bonding structure 1 in the semiconductor device 10. That is, as shown in FIG. 1, the concentration of gold is relative to the total amount of gold, silver, and aluminum in the vicinity of the bonding interface between the ball compression portion 6 provided at one end of the bonding wire 15 and the chip electrode 13.
  • a gold-enriched bonding region 7 of 5 atomic% or more is provided.
  • Examples 1 to 26 are examples, and examples 27 to 32 are comparative examples.
  • Examples 1 to 26 As a core material, a silver or silver alloy core material produced by continuous casting was prepared, and continuous wire drawing was performed to process an intermediate wire diameter of 0.05 mm to 1.0 mm. Furthermore, a gold electroplating bath in which appropriate amounts of each of sulfur, selenium, tellurium, arsenic, and antimony additives are added to a silver wire having an intermediate wire diameter is used, and the silver wire is immersed while continuously transmitting the wire. Then, a current was passed through the silver wire at a current density of 0.20 A / dm 2 or more and 2.0 A / dm 2 or less to form a gold coating layer. After that, the wire drawn to a final wire diameter of ⁇ 20 ⁇ m was subjected to final heat treatment to prepare gold-coated silver bonding wires of Examples 1 to 26.
  • Gold content in gold-coated silver bonding wire gold is derived from the coating layer and is not contained in the silver core material, and contains palladium, indium, and Group 15 and 16 elements that are additives to the silver core material.
  • the amount is the method described above and the method described above (
  • FAB production conditions FAB was prepared under the above-mentioned conditions and bonded to the electrodes under the above-mentioned bonding conditions (see [0024] and [0040]).
  • the ball formability can be evaluated by the roundness after the ball is crimped. For the 30 first joints, observe the joined balls from above, measure the maximum width of the crimping balls and the width orthogonal to this, and the ratio of the maximum width to the width orthogonal to this (maximum width / orthogonal width). ) was asked. If the average value of the above 30 pieces of this ratio is 1.00 or more and less than 1.15, it is good ( ⁇ ), and if it is 1.15 or more, there is a problem and it is bad (X).
  • the gold analysis value of the gold-enriched joint region in Table 1 the value of the set with the highest gold concentration among the four sets of joint structures was adopted, and the gold concentration at the measurement point of the line analysis near the joint interface of that set was adopted. 3 points were selected from the highest order, and the average value of the 3 points was described.
  • the evaluation of whether or not there is a gold-enriched joint region between both ends of the compression part and the above-mentioned one-eighth part is passed ( ⁇ ) if all four sets of balls are used, and if there is no one set. It was rejected (X).
  • the occupancy rate of the gold-enriched joint region it was described as passing ( ⁇ ) when all four sets of joining structures were 25% or more, and failing (X) when even one set was less than 25%. (Refer to [0027] to [0032] for details of each evaluation method).
  • EFO-Gap Adjusts the current to a predetermined value in the range of 30 to 90 mA and the discharge time in the range of 50 to 1000 ⁇ s, EFO-Gap is 25 to 45 mil (about 635 to 1143 ⁇ m), and the tail length is 6 to 12 mil (about 152 to 152 to). 305 ⁇ m).
  • the conditions for the first joining are, for example, in Example 1 in which the wire wire diameter ⁇ is 20 ⁇ m, a free air ball having a ball diameter of 36 ⁇ m is formed, the height of the ball compression portion is 10 ⁇ m, and the joint surface of the ball compression portion is formed.
  • the bonding conditions were adjusted so that the maximum width in the parallel direction was 45 ⁇ m and the ball share strength was 15 gf or more.
  • the Al-0.5 mass% Cu alloy electrode on the chip only the adjacent bond portions are electrically connected, and two adjacent wires electrically form one circuit. A total of 320 circuits are formed.
  • the Si chip on the BGA substrate was resin-sealed using a commercially available transfur mold machine (Daiichi Seiko Co., Ltd., GPGP-PRO-LAB80) to obtain a test piece.
  • a commercially available halogen-free resin chlorine concentration of 15 ppm or less, ph6 or more and 7 or less
  • the height of the ball compression portion is 7 to 13 ⁇ m, and the maximum width in the direction parallel to the joint surface of the ball compression portion is 1.2 times that of the formed free air ball. did.
  • the gold concentration in the vicinity of the bonding interface between the electrode containing aluminum and the ball compression portion is 5 with respect to the total of aluminum, silver and gold.
  • a gold-enriched bonding region having a content of 0.0 atomic% or more can be formed. With such a bonding structure, the HAST evaluation is good, and it is possible to provide a highly reliable semiconductor device in which the specific resistance of the connection portion does not increase even when exposed to a harsh environment such as high temperature and high humidity for a long time. ..
  • the gold-enriched bonding region is near both ends of the bonding interface, and the gold-concentrated bonding region occupies 25% or more of the width of the ball compression portion at the bonding interface, so that HAST It can be seen that the evaluation is good. Further, adding an additive element of palladium or indium to the core material of the wire is also one of the factors for improving the HAST evaluation. Regarding the gold concentration in the gold-enriched bonding region, the higher the gold concentration, the better the HAST evaluation tends to be. It is considered that a higher gold concentration has a better effect on the HAST evaluation than adding palladium or the like to the core material.
  • the gold layer (concentration-converted value in Table 1) covering the wire is less than 2.0% by mass
  • the gold concentration in the gold-concentrated bonding region becomes less than 5 atomic% and HAST.
  • the evaluation fails, and conversely, if the gold layer covering the wire is too thick (here, if it exceeds 7% by mass in terms of concentration), eccentricity etc. will occur during FAB formation, and ball formation will deteriorate. I understand.
  • the amount of Group 15 and Group 16 elements added is also important. If it is less than 4 mass ppm, the gold concentration in the gold-enriched bonding region becomes less than 5 atomic%, and the HAST evaluation also fails. If it exceeds 80 mass ppm, crack defects occur on the wire surface. Of course, even when the Group 15 and Group 16 elements are not added, the gold-concentrated bonding region becomes less than 5 atomic%, and the HAST evaluation also fails.
  • the concentration of gold is high in the vicinity of the bonding interface between the electrode and the ball compression portion while suppressing an increase in the specific resistance of the bonding wire.
  • the bonding reliability between the electrode and the ball compression portion can be improved.
  • the semiconductor device of the present invention to which such a wire bonding structure is applied it is possible to improve the bonding reliability between the electrode and the ball compression portion by the gold-concentrated bonding region, and eventually the reliability of the semiconductor device itself. become.

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  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
PCT/JP2020/010119 2019-10-01 2020-03-09 ワイヤ接合構造とそれに用いられるボンディングワイヤ及び半導体装置 Ceased WO2021065036A1 (ja)

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