WO2021033588A1 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- WO2021033588A1 WO2021033588A1 PCT/JP2020/030534 JP2020030534W WO2021033588A1 WO 2021033588 A1 WO2021033588 A1 WO 2021033588A1 JP 2020030534 W JP2020030534 W JP 2020030534W WO 2021033588 A1 WO2021033588 A1 WO 2021033588A1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Definitions
- the present disclosure relates to a substrate processing apparatus and a substrate processing method.
- An object of the present disclosure is to provide a technique for drying a substrate using a processing fluid in a supercritical state, which can suppress the adhesion of particles to the surface of the substrate.
- the substrate processing apparatus includes a liquid processing unit, a drying processing unit, a transport unit, and a gas supply unit.
- the liquid treatment unit wets the surface of the substrate by performing liquid treatment on the substrate.
- the drying treatment unit is arranged at a place different from the liquid treatment unit, and performs a drying treatment for drying the substrate whose surface is wet.
- the transport section takes out the substrate whose surface is wet from the liquid treatment section and transports it to the drying process section.
- the gas supply unit has a gas on the back surface of the substrate whose surface is wet during at least a part of the period from when the substrate whose surface is wet is taken out from the liquid treatment unit to when the drying treatment is started in the drying treatment unit. To supply.
- FIG. 1 is a diagram showing a configuration of a substrate processing system according to an embodiment.
- FIG. 2 is a side view showing the configuration of the transport device according to the embodiment.
- FIG. 3 is a plan view showing the configuration of the first holding portion according to the embodiment.
- FIG. 4 is a plan view showing the configuration of the second holding portion according to the embodiment.
- FIG. 5 is a side sectional view showing the configuration of the second holding portion according to the embodiment.
- FIG. 6 is a diagram showing a configuration of a liquid treatment unit according to the embodiment.
- FIG. 7 is an external perspective view of the drying processing unit according to the embodiment.
- FIG. 8 is a plan view of the third holding portion according to the embodiment.
- FIG. 9 is a side sectional view of the third holding portion according to the embodiment.
- FIG. 1 is a diagram showing a configuration of a substrate processing system according to an embodiment.
- FIG. 2 is a side view showing the configuration of the transport device according to the embodiment.
- FIG. 3 is
- FIG. 10 is a flowchart showing a processing procedure executed by the substrate processing system according to the embodiment.
- FIG. 11 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 12 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 13 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 14 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 15 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 16 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 17 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 18 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 19 is a diagram showing an operation example of the transport device according to the embodiment.
- FIG. 20 is a diagram showing an operation example of the transport device according to the embodiment.
- the liquid in the liquid film on the substrate may wrap around to the back surface of the substrate.
- particles may be generated on the surface portion of the substrate to which the returned liquid adheres.
- FIG. 1 is a diagram showing a configuration of a substrate processing system according to an embodiment.
- the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3.
- the loading / unloading station 2 and the processing station 3 are provided adjacent to each other.
- the loading / unloading station 2 includes a carrier mounting section 11 and a transport section 12.
- a plurality of carriers C for accommodating a plurality of semiconductor wafers (hereinafter, referred to as "wafer W") in a horizontal state are mounted on the carrier mounting portion 11.
- the transport unit 12 is provided adjacent to the carrier mounting unit 11.
- a transfer device 13 and a delivery unit 14 are arranged inside the transfer unit 12.
- the transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the transfer device 13 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the wafer W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. ..
- the processing station 3 is provided adjacent to the transport unit 12.
- the processing station 3 includes a transport block 4 and a plurality of processing blocks 5.
- the transport block 4 includes a transport area 15 and a transport device 16.
- the transport area 15 is, for example, a rectangular parallelepiped region extending along the arrangement direction (X-axis direction) of the carry-in / out station 2 and the processing station 3.
- a transport device 16 is arranged in the transport area 15.
- the transfer device 16 includes a wafer holding mechanism for holding the wafer W.
- the transfer device 16 is capable of moving in the horizontal and vertical directions and turning around the vertical axis, and transfers the wafer W between the delivery unit 14 and the plurality of processing blocks 5 by using the wafer holding mechanism. Do.
- the plurality of processing blocks 5 are arranged adjacent to the transport area 15 on both sides of the transport area 15. Specifically, the plurality of processing blocks 5 are arranged on one side (Y-axis positive direction side) of the transport area 15 in a direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3. ) And the other side (Y-axis negative direction side).
- Each processing block 5 includes a liquid processing unit 17, a drying processing unit 18, and a supply unit 19.
- the liquid treatment unit 17 performs a cleaning treatment for cleaning the upper surface, which is the pattern forming surface of the wafer W. Further, the liquid treatment unit 17 performs a liquid film forming treatment for forming a liquid film on the surface (upper surface) of the wafer W after the cleaning treatment.
- the configuration of the liquid treatment unit 17 will be described later.
- the drying treatment unit 18 performs supercritical drying treatment on the wafer W after the liquid film formation treatment. Specifically, the drying treatment unit 18 dries the wafer W after the liquid film forming treatment by bringing the wafer W into contact with the processing fluid in the supercritical state.
- the drying processing unit 18 includes a processing area 181 in which supercritical drying processing is performed, and a delivery area 182 in which the wafer W is transferred between the transfer block 4 and the processing area 181.
- the processing area 181 and the delivery area 182 are arranged along the transport area 15. The specific configuration of the drying treatment unit 18 will be described later.
- the supply unit 19 supplies the processing fluid to the drying processing unit 18.
- the supply unit 19 includes a supply device group including a flow meter, a flow rate regulator, a back pressure valve, a heater, and a housing for accommodating the supply device group.
- the supply unit 19 supplies CO2 as a treatment fluid to the drying treatment unit 18.
- the board processing system 1 includes a control device 6.
- the control device 6 is, for example, a computer, and includes a control unit 61 and a storage unit 62.
- the control unit 61 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits.
- the CPU of the microcomputer controls the operations of the transfer device 16, the liquid processing unit 17, the drying processing unit 18, and the like by reading and executing the program stored in the ROM.
- the program may be recorded on a recording medium readable by a computer, and may be installed from the recording medium in the storage unit 62 of the control device 6.
- Recording media that can be read by a computer include, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
- the storage unit 62 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.
- FIG. 2 is a side view showing the configuration of the transport device 16 according to the embodiment.
- the transport device 16 is horizontally composed of a first holding unit 110, a second holding unit 120, a first advancing / retreating mechanism 130, a second advancing / retreating mechanism 140, and an elevating mechanism 150. It is provided with a moving mechanism 160.
- the first holding unit 110 holds the wafer W.
- the second holding portion 120 is arranged below the first holding portion 110 and holds the wafer W. The configuration of the first holding portion 110 and the second holding portion 120 will be described later.
- the first advancing / retreating mechanism 130 advances / retreats the first holding portion 110 in the horizontal direction, specifically, in the Y-axis direction orthogonal to the extending direction of the transport area 15.
- the second advancing / retreating mechanism 140 advances / retreats the second holding portion 120 along the Y-axis direction.
- the elevating mechanism 150 raises and lowers the first holding portion 110 and the second holding portion 120 by moving the first advancing / retreating mechanism 130 and the second advancing / retreating mechanism 140 along the vertical direction.
- the horizontal movement mechanism 160 horizontally moves the first holding portion 110 and the second holding portion 120 in the extending direction of the transport area 15 by moving the elevating mechanism 150 along the X-axis direction.
- FIG. 3 is a plan view showing the configuration of the first holding portion 110 according to the embodiment.
- the first holding portion 110 includes, for example, a flat plate-shaped base portion 111 having a bifurcated shape having a width smaller than the diameter of the wafer W, and a plurality of support members 112 provided on the surface of the base portion 111. And.
- the first holding portion 110 holds the wafer W horizontally by supporting the wafer W from below using a plurality of supporting members 112.
- FIG. 4 is a plan view showing the configuration of the second holding portion 120 according to the embodiment.
- FIG. 5 is a side sectional view showing the configuration of the second holding portion 120 according to the embodiment.
- the second holding portion 120 includes a base portion 121, a plurality of support members 122, a plurality of grip portions 123, a first gas supply portion 124, and a drainage portion 125. Be prepared.
- the base portion 121 is a plate-shaped member arranged below the wafer W.
- a circular recess 121a having a diameter larger than that of the wafer W is formed in the base portion 121, and the wafer W is placed in the recess 121a via a plurality of support members 122 described later.
- the plurality of support members 122 are members that project upward from the bottom surface of the recess 121a, and support the outer peripheral portion of the wafer W from below.
- the wafer W is supported by a plurality of support members 122 so that it floats from the base portion 121.
- Each support member 122 is connected to the elevating mechanism 122a and can be moved along the vertical direction by the elevating mechanism 122a. That is, the plurality of support members 122 can be raised and lowered with respect to the base portion 121. As a result, the plurality of support members 122 can support the wafer W at a position higher than the surface of the base portion 121, and can also support the wafer W at a position lower than the upper surface of the base portion 121.
- the elevating mechanism 122a may elevate the support member 122 by the driving force of an electric motor such as a motor. Further, the elevating mechanism 122a may elevate the support member 122 by utilizing the inverse piezoelectric effect of the piezo element. Further, the elevating mechanism 122a may elevate the support member 122 by using air pressure.
- the second holding unit 120 does not necessarily have to be provided with a plurality of elevating mechanisms 122a. That is, the second holding portion 120 may be configured to include one elevating mechanism 122a that integrally elevates and elevates the plurality of support members 122.
- the plurality of grip portions 123 are provided on the peripheral wall of the recess 121a, for example.
- Each grip portion 123 is connected to the moving mechanism 123a, and can be moved in the horizontal direction, specifically, along the radial direction of the wafer W by the moving mechanism 123a. In this way, the plurality of grips 123 can approach or retract with respect to the wafer W. As a result, the plurality of gripping portions 123 can grip the wafer W from the side by moving toward the wafer W. Further, the plurality of gripping portions 123 can release the gripped state of the wafer W by moving away from the wafer W.
- the plurality of grip portions 123 are at least at a height position where the surface of the wafer W, preferably the surface of the liquid film L formed on the wafer W, is lower than the upper surface of the base portion 121. Grasp W.
- the gas is supplied to the outer peripheral portion of the back surface (lower surface) of the wafer W by the first gas supply unit 124 described later, the liquid of the liquid film L is suppressed from being scattered to the outside of the second holding unit 120. can do.
- the liquid of the liquid film L that has fallen from the wafer W is collected in the recess 121a of the base portion 121, and then discharged from the recess 121a by the drainage portion 125 described later.
- the first gas supply unit 124 supplies gas to the outer peripheral portion of the back surface of the wafer W gripped by the plurality of grip units 123. As a result, the first gas supply unit 124 can prevent the liquid of the liquid film L formed on the surface of the wafer W from wrapping around from the peripheral edge of the surface of the wafer W to the back surface of the wafer W.
- the first gas supply unit 124 includes a plurality of discharge ports 124a, a supply pipe 124b, a flow rate adjusting unit 124c, and a gas supply source 124d.
- the plurality of discharge ports 124a are provided on the bottom surface of the recess 121a in the base portion 121, and discharge the gas toward the outer peripheral portion of the back surface of the wafer W.
- the plurality of discharge ports 124a are arranged side by side on the circumference of the recess 121a along the circumference of a circle concentric with the wafer W.
- the first gas supply unit 124 can suitably suppress the wraparound of the liquid of the liquid film L to the back surface of the wafer W over the entire circumference of the wafer W.
- the supply pipe 124b connects the plurality of discharge ports 124a and the gas supply source 124d, and circulates the gas supplied from the gas supply source 124d.
- the flow rate adjusting unit 124c is provided in the middle of the supply pipe 124b, and by opening and closing the supply pipe 124b, the discharge of gas from the discharge port 124a is started or stopped, or the flow rate of the gas discharged from the discharge port 124a. Or adjust.
- the gas supply source 124d supplies, for example, nitrogen gas as a gas.
- the gas supplied from the gas supply source 124d may be an inert gas other than nitrogen gas such as argon gas.
- the first gas supply unit 124 can suppress oxidation of the wafer W, for example, by using an inert gas as the gas supplied to the back surface of the wafer W.
- the gas supply source 124d may supply a gas other than the inert gas, such as dry air.
- the drainage portion 125 is, for example, an opening provided in the central portion of the bottom surface of the recess 121a.
- the drainage unit 125 is connected to the discharge pipe 125a, and the liquid or the like of the liquid film L accumulated in the recess 121a can be discharged to the outside of the second holding unit 120 via the discharge pipe 125a.
- the number of the plurality of support members 122, the plurality of grip portions 123, and the plurality of discharge ports 124a is not limited to the illustrated example.
- FIG. 6 is a diagram showing the configuration of the liquid treatment unit 17 according to the embodiment.
- the liquid treatment unit 17 is configured as, for example, a single-wafer type cleaning device that cleans the wafers W one by one by spin cleaning.
- the liquid treatment unit 17 holds the wafer W substantially horizontally by the wafer holding mechanism 25 arranged in the outer chamber 23 forming the processing space, and holds the wafer holding mechanism 25 around the vertical axis.
- the wafer W is rotated by rotating the wafer W.
- the liquid treatment unit 17 causes the nozzle arm 26 to enter above the rotating wafer W, and supplies the chemical liquid and the rinse liquid from the chemical liquid nozzle 26a provided at the tip of the nozzle arm 26 in a predetermined order. , The surface of the wafer W is cleaned.
- a gas supply path 25a is formed inside the wafer holding mechanism 25.
- the liquid treatment unit 17 supplies a gas supplied from the gas supply path 25a, for example, an inert gas such as nitrogen gas, to the central portion of the back surface of the wafer W.
- the various chemicals described above are received by the outer chamber 23 and the inner cup 24 arranged in the outer chamber 23, and drained from the drain port 23a provided at the bottom of the outer chamber 23 and the bottom of the inner cup 24. It is discharged from the liquid port 24a. Further, the atmosphere inside the outer chamber 23 is exhausted from the exhaust port 23b provided at the bottom of the outer chamber 23.
- the liquid film forming treatment is performed after the rinsing treatment in the cleaning treatment. Specifically, the liquid treatment unit 17 supplies the IPA liquid to the front surface and the back surface of the wafer W while rotating the wafer holding mechanism 25. As a result, the DIW remaining on both sides of the wafer W is replaced with IPA.
- the liquid treatment unit 17 supplies gas from the gas supply path 25a to the central portion of the back surface of the wafer W.
- the gas supplied to the central portion of the back surface of the wafer W flows along the back surface of the wafer W toward the outer peripheral portion of the back surface of the wafer W.
- the liquid treatment unit 17 gently stops the rotation of the wafer holding mechanism 25.
- the wafer W that has completed the liquid film forming process is received by the transfer device 16 by the transfer mechanism (lifter pin 25b described later) provided in the wafer holding mechanism 25 while the liquid film of IPA liquid is formed on the surface thereof. It is handed over and carried out from the liquid treatment unit 17.
- the liquid film formed on the wafer W evaporates (vaporizes) the liquid on the upper surface of the wafer W during the transfer of the wafer W from the liquid processing unit 17 to the drying processing unit 18 and the operation of carrying the wafer W into the drying processing unit 18. By doing so, it is possible to prevent the pattern from collapsing.
- FIG. 7 is an external perspective view of the drying treatment unit 18 according to the embodiment.
- FIG. 8 is a plan view of the third holding portion according to the embodiment.
- FIG. 9 is a side sectional view of the third holding portion according to the embodiment.
- the drying processing unit 18 includes a processing container 31, a third holding portion 32, a lid 33, and a lifter 39.
- the processing container 31 is a pressure vessel capable of forming a high pressure environment of, for example, about 16 to 20 MPa.
- the processing container 31 is arranged in the processing area 181 (see FIG. 1), and the supercritical drying treatment is performed in the processing space which is the internal space of the processing container 31.
- the third holding unit 32 holds the wafer W in the horizontal direction.
- the lid 33 supports the third holding portion 32.
- the lid 33 is connected to the moving mechanism 33a, and the moving mechanism 33a horizontally moves between the processing area 181 and the delivery area 182.
- the third holding portion 32 is arranged inside the processing container 31, and the lid 33 closes the opening 34 of the processing container 31.
- Supply ports 35A and 35B and discharge ports 36 are provided on the wall of the processing container 31.
- the supply port 35A is connected to a supply line 35C that supplies the processing fluid into the processing space.
- the supply port 35B is connected to a supply line 35D that supplies the processing fluid into the processing space.
- the discharge port 36 is connected to a discharge line 36A that discharges the processing fluid from the processing space.
- the supply port 35A is connected to the side surface of the processing container 31 opposite to the opening 34, and the supply port 35B is connected to the bottom surface of the processing container 31. Further, the discharge port 36 is connected to the lower side of the opening 34.
- the number of supply ports 35A and 35B and discharge ports 36 is not particularly limited.
- fluid supply headers 37A and 37B and a fluid discharge header 38 are provided inside the processing container 31 .
- a large number of holes are formed in both the fluid supply headers 37A and 37B and the fluid discharge header 38.
- the fluid supply header 37A is connected to the supply port 35A and is provided inside the processing container 31 adjacent to the side surface opposite to the opening 34. Further, a large number of openings formed in the fluid supply header 37A face the opening 34 side.
- the fluid supply header 37B is connected to the supply port 35B and is provided at the center of the bottom surface inside the processing container 31.
- the numerous openings formed in the fluid supply header 37B face upward.
- the fluid discharge header 38 is connected to the discharge port 36, and is provided inside the processing container 31 so as to be adjacent to the side surface on the opening 34 side and below the opening 34.
- the numerous openings formed in the fluid discharge header 38 face the fluid supply header 37A side.
- the drying processing unit 18 supplies the heated processing fluid into the processing container 31 from the fluid supply headers 37A and 37B, and discharges the processing fluid in the processing container 31 through the fluid discharge header 38.
- a damper for adjusting the discharge amount of the processing fluid from the processing container 31 is provided in the discharge path of the processing fluid, and the processing fluid is adjusted by the damper so that the pressure in the processing container 31 is adjusted to a desired pressure. Emissions are adjusted. As a result, the supercritical state of the processing fluid is maintained in the processing container 31. In the following, the processing fluid in the supercritical state will be referred to as "supercritical fluid".
- the supercritical fluid is supplied from the fluid supply header 37B or the like to the back surface of the wafer W. Due to the flow of the fluid, the liquid that has wrapped around the back surface may be returned to the front surface of the wafer W. In this case, particles may be generated on the surface portion of the wafer W to which the returned liquid is attached.
- the IPA liquid existing on the pattern forming surface (upper surface) of the wafer W gradually dissolves in the supercritical fluid by coming into contact with the supercritical fluid in a high pressure state (for example, 16 MPa), and finally, Replaces supercritical fluid. As a result, the gap between the patterns is filled with the supercritical fluid.
- the drying processing unit 18 reduces the pressure in the processing container 31 from the high pressure state to the atmospheric pressure. As a result, the supercritical fluid that fills the gap between the patterns changes to a normal processing fluid in a gaseous state.
- the drying treatment unit 18 removes the IPA liquid from the pattern forming surface by replacing the IPA liquid existing on the pattern forming surface with the supercritical fluid and then returning the supercritical fluid to the processing fluid in the gaseous state. To dry the pattern forming surface.
- Supercritical fluids have a lower viscosity than liquids (for example, IPA liquids), have a high ability to dissolve liquids, and have no interface between supercritical fluids and liquids or gases in equilibrium. Therefore, by performing the supercritical drying treatment, the liquid can be dried without being affected by the surface tension. That is, it is possible to prevent the pattern from collapsing during the drying process.
- liquids for example, IPA liquids
- the IPA liquid is used as the anti-drying liquid and CO2 is used as the processing fluid.
- a liquid other than IPA may be used as the anti-drying liquid, or a fluid other than CO2 may be used. It may be used as a processing fluid.
- the lifter 39 includes a plurality of lifter pins 39a and a support 39b connected to the lower ends of the plurality of lifter pins 39a to support the plurality of lifter pins 39a.
- the lifter 39 moves up and down by an elevating drive unit (not shown). Specifically, the lifter 39 moves up and down between the transfer position where the wafer W is transferred to and from the transfer device 16 and the standby position.
- the standby position is a position below the lid 33 and the third holding portion 32 that do not interfere with the lid 33 and the third holding portion 32.
- the third holding portion 32 includes a base portion 32a, a plurality of support members 32b, and a plurality of through holes 32d.
- the base portion 32a is a plate-shaped member arranged below the wafer W.
- a circular recess 32a1 having a diameter larger than that of the wafer W is formed in the base portion 32a, and the wafer W is placed in the recess via a plurality of support members 32b described later.
- the plurality of support members 32b are members that project upward from the bottom surface of the recess 32a1 formed in the base portion 32a, and support the outer peripheral portion of the wafer W from below.
- the wafer W is supported by a plurality of support members 32b so that it floats from the base portion 32a (see FIG. 9).
- the number and arrangement of the plurality of support members 32b are not limited to the illustrated example.
- the plurality of through holes 32d are formed on the bottom surface of the recess 32a1 formed in the base portion 32a, and penetrate the base portion 32a in the vertical direction.
- the plurality of through holes 32d are formed, for example, in the radial direction of the circular recess formed in the base portion 32a with respect to the plurality of support members 32b.
- the plurality of through holes 32d function as a flow path for the processing fluid supplied from the bottom surface 31c of the processing space 31a.
- the three through holes 32d formed in the central portion of the circular recess also function as insertion holes for the lifter pin 39a.
- the number and arrangement of the plurality of through holes 32d are not limited to the illustrated example.
- the drying processing unit 18 further includes a second gas supply unit 35.
- the second gas supply unit 35 is arranged in the delivery area 182 (see FIG. 1).
- the second gas supply unit 35 includes a discharge unit 35a, a supply pipe 35b, a flow rate adjusting unit 35c, and a gas supply source 35d.
- the discharge unit 35a is arranged below the third holding unit 32 arranged in the delivery area 182 with the discharge port facing upward.
- the supply pipe 35b connects the discharge unit 35a and the gas supply source 35d, and circulates the gas supplied from the gas supply source 35d.
- the flow rate adjusting unit 35c is provided in the middle of the supply pipe 35b, and by opening and closing the supply pipe 35b, the discharge of gas from the discharge unit 35a is started or stopped, or the flow rate of the gas discharged from the discharge unit 35a. Or adjust.
- the gas supply source 35d supplies an inert gas such as nitrogen gas as a gas.
- the gas supply source 35d may supply a gas other than the inert gas, such as dry air.
- the second gas supply unit 35 discharges gas from the discharge unit 35a toward the lower surface of the base unit 32a included in the third holding unit 32.
- the gas discharged to the lower surface of the base portion 32a reaches the back surface of the wafer W through the plurality of through holes 32d formed in the base portion 32a, and then reaches the back surface of the wafer W along the back surface of the wafer W. Flow toward.
- the wafer W is moved between the time when the third holding portion 32 moves into the processing container 31 and the drying process is started. It is possible to prevent the IPA supplied to the front surface from wrapping around the back surface of the wafer W.
- the second gas supply unit 35 may further include a movement mechanism for horizontally moving the discharge unit 35a.
- the gas can be more evenly supplied to the outer peripheral portion of the back surface of the wafer W, and the liquid film L can be more reliably suppressed from wrapping around the back surface of the wafer W.
- FIG. 10 is a flowchart showing a processing procedure executed by the substrate processing system 1 according to the embodiment.
- FIG. 10 shows an example of the processing procedure from when the wafer W is carried into the liquid processing unit 17 to when it is carried out from the drying processing unit.
- 11 to 20 are diagrams showing an operation example of the transport device 16 according to the embodiment. Each processing procedure shown in FIG. 10 is executed according to the control by the control unit 61.
- the transfer device 13 takes out the wafer W housed in the carrier C and places it on the delivery unit 14. Subsequently, the transfer device 16 takes out the wafer W from the delivery unit 14, and then carries the taken out wafer W into the liquid processing unit 17 as shown in FIG. 10 (step S101).
- the transfer device 16 takes out the wafer W from the delivery unit 14 by using the first holding unit 110 (see FIG. 3). Then, the transfer device 16 transfers the wafer W held by the first holding unit 110 from the delivery unit 14 to the liquid processing unit 17.
- the liquid processing unit 17 performs liquid treatment on the wafer W (step S102). Specifically, the liquid treatment unit 17 cleans the surface of the wafer W with a chemical solution or a rinse liquid, and then supplies an IPA liquid to the surface of the wafer W to form a liquid film L to form a liquid film L. Perform processing.
- the wafer W after the liquid treatment that is, the wafer W on which the liquid film L is formed is delivered from the liquid treatment unit 17 to the transfer device 16 (step S103).
- the liquid treatment unit 17 raises a plurality of lifter pins 25b provided in the wafer holding mechanism 25 to raise the liquid-treated wafer W to a plurality of lifter pins. Raise using 25b.
- the transfer device 16 horizontally moves the first holding portion 110 by using the first advancing / retreating mechanism 130 (see FIG. 2) to arrange the first holding portion 110 below the wafer W.
- the transport device 16 raises the first holding portion 110 by using the elevating mechanism 150 (see FIG. 2).
- the wafer W is delivered from the liquid processing unit 17 to the transfer device 16.
- the transfer device 16 transfers the wafer W from the first holding unit 110 to the second holding unit 120 (step S104).
- the transport device 16 moves the second holding unit 120 horizontally by using the second advancing / retreating mechanism 140 (see FIG. 1) to move the second holding unit 120 to the first position. It is arranged below the holding portion 110. After that, as shown in FIG. 14, the transport device 16 raises the plurality of support members 122 by using the plurality of elevating mechanisms 122a to raise the wafer W held by the first holding portion 110 to the plurality of support members 122. To support.
- the transport device 16 retracts the first holding portion 110 by using the first advancing / retreating mechanism 130.
- the transport device 16 lowers the plurality of support members 122 by using the plurality of elevating mechanisms 122a, and then horizontally moves the plurality of gripping portions 123 by using the plurality of moving mechanisms 123a, whereby the plurality of gripping portions 123 are moved.
- Wafer W is gripped using 123.
- the first purge process described later the displacement of the wafer W due to the gas supplied from the first gas supply unit 124 can be suppressed.
- the transfer device 16 transfers the wafer W after the liquid treatment from the first holding portion 110 to the second holding portion 120.
- the first purge process is started (step S105). Specifically, the transfer device 16 opens the supply pipe 124b using the flow rate adjusting unit 124c (see FIG. 5), so that the outer periphery of the back surface of the wafer W is transmitted from the plurality of discharge ports 124a provided in the first gas supply unit 124. Discharge gas toward the part. As a result, the liquid of the liquid film L formed on the surface of the wafer W is suppressed from wrapping around the back surface of the wafer W.
- the wafer W is carried into the drying processing unit 18 in the state where the first purge processing is performed (step S106).
- the transport device 16 carries out the wafer W from the liquid processing unit 17 while holding the wafer W by using the second holding unit 120. Then, the transfer device 16 arranges the second holding portion 120 holding the wafer W above the third holding portion 32 arranged in the delivery area 182 of the drying processing unit 18.
- the transfer device 16 ends the first purge process by closing the supply pipe 124b using the flow rate adjusting unit 124c (step S107).
- the transfer device 16 switches the wafer W from the second holding unit 120 to the first holding unit 110 (step S108).
- the transport device 16 raises the plurality of support members 122 and then horizontally moves the first holding portion 110 as shown in FIG. 18 to move the first holding portion 110 below the wafer W. To be placed in. Then, the transfer device 16 delivers the wafer W to the first holding unit 110 by lowering the plurality of support members 122. After that, as shown in FIG. 19, the transport device 16 retracts the second holding portion 120.
- the wafer W is delivered from the transfer device 16 to the drying processing unit 18 (step S109).
- the drying processing unit 18 raises the plurality of lifter pins 39a to raise the wafer W held by the first holding portion 110, and causes the plurality of lifter pins 39a to support the wafer W.
- the transfer device 16 may support the wafer W by a plurality of lifter pins 39a that have been raised in advance by lowering the first holding portion 110. After that, the transfer device 16 retracts the first holding unit 110. Then, the drying processing unit 18 causes the third holding portion 32 to hold the wafer W by lowering the plurality of lifter pins 39a.
- the drying processing unit 18 includes the discharge unit 35a to the third holding unit 32 included in the second gas supply unit 35 by opening the supply pipe 35b using the flow rate adjusting unit 35c (see FIG. 9). Gas is discharged toward the lower surface of the base portion 32a.
- the gas discharged to the lower surface of the base portion 32a reaches the back surface of the wafer W through the plurality of through holes 32d formed in the base portion 32a, and then reaches the back surface of the wafer W along the back surface of the wafer W. Flow toward. As a result, the liquid of the liquid film L formed on the surface of the wafer W is suppressed from wrapping around the back surface of the wafer W.
- the drying processing unit 18 carries the wafer W into the processing container 31 by horizontally moving the third holding portion 32 using the moving mechanism 33a (see FIG. 8) (step S111).
- the drying processing unit 18 stops the gas discharge by the second gas supply unit 35 after the movement of the third holding unit 32 is started and before the wafer W is carried into the processing container 31.
- the drying processing unit 18 may stop the discharge of gas by the second gas supply unit 35 before the movement of the third holding unit 32 is started.
- step S112 supercritical drying processing is performed (step S112). Specifically, the drying treatment unit 18 dries the wafer W after the liquid film forming treatment by bringing the wafer W into contact with the processing fluid in the supercritical state.
- the transfer device 16 carries out the wafer W from the drying processing unit 18 (step S113). Specifically, the transfer device 16 holds the wafer W after the supercritical drying process by using the first holding unit 110, and carries out the held wafer W from the transfer device 16. After that, the transfer device 16 places the wafer W on the delivery section 14, and the transfer device 13 takes out the wafer W from the delivery section 14 and returns it to the carrier C. As a result, a series of substrate processing for one wafer W is completed.
- the transfer device 16 may change the flow rate of the gas supplied from the first gas supply unit 124 according to the movement of the transfer device 16.
- the transfer device 16 is a gas in a predetermined period including a start time of horizontal movement of the second holding portion 120 by the second advance / retreat mechanism 140 and a predetermined time including an end time. You may increase the flow rate of. Further, in step S106, the transfer device 16 is a gas in a predetermined period including the start time of the horizontal movement of the second holding portion 120 by the horizontal movement mechanism 160 and a predetermined time including the end time. The flow rate may be increased. As a result, it is possible to more reliably prevent the liquid in the liquid film L from spilling from the wafer W when the second holding portion 120 starts or ends moving, or when the direction is changed.
- the transfer device 16 changes the flow rate of the gas supplied from the first gas supply unit 124 in the first purge process according to the amount of the liquid film L formed on the surface of the wafer W in the liquid film forming process. You may. That is, the transport device 16 may increase the flow rate of the gas supplied from the first gas supply unit 124 as the amount of liquid in the liquid film L increases. As a result, it is possible to more appropriately suppress the wraparound of the liquid of the liquid film L to the back surface of the wafer W.
- the substrate processing apparatus (as an example, the substrate processing system 1) according to the embodiment includes a liquid processing unit (as an example, a liquid processing unit 17) and a drying processing unit (as an example, a drying processing unit 18).
- a transport unit (as an example, a transport device 16) and a gas supply unit (as an example, a first gas supply unit 124 and a second gas supply unit 35) are provided.
- the liquid treatment unit wets the surface of the substrate by performing liquid treatment on the substrate (for example, the wafer W).
- the drying treatment unit is arranged at a place different from the liquid treatment unit, and performs a drying treatment for drying the substrate whose surface is wet.
- the transport section takes out the substrate whose surface is wet from the liquid treatment section and transports it to the drying process section.
- the gas supply unit has a gas on the back surface of the substrate whose surface is wet during at least a part of the period from when the substrate whose surface is wet is taken out from the liquid treatment unit to when the drying treatment is started in the drying treatment unit. To supply.
- the liquid spills from the front surface to the back surface of the substrate during at least a part of the period from when the substrate whose surface is wet is taken out from the liquid treatment section to when the drying process is started in the drying treatment section. It is suppressed. Therefore, in the technique of drying the substrate using the processing fluid in the supercritical state, it is possible to suppress the adhesion of particles to the surface of the substrate.
- the gas supply unit may include a first gas supply unit (for example, a first gas supply unit 124).
- the first gas supply unit is provided in the transport unit. By providing the first gas supply unit in the transport unit, for example, it is possible to prevent the liquid from sneaking into the back surface of the substrate during transport from the liquid treatment unit to the drying treatment unit.
- the transport unit includes a first holding unit (for example, a first holding unit 110), a second holding unit (for example, a second holding unit 120), and a horizontal moving mechanism (for example, a horizontal moving mechanism 160). You may have it.
- the first holding unit receives the substrate whose surface is wet from the liquid processing unit.
- the second holding unit receives the substrate whose surface is wet from the first holding unit and conveys it to the drying processing unit.
- the horizontal movement mechanism moves the first holding part and the second holding part between the liquid processing part and the drying processing part.
- the first gas supply unit may be provided in the second holding unit.
- the operation of receiving the substrate from the liquid processing unit is hindered. It is possible to prevent the liquid from sneaking into the back surface of the substrate.
- the second holding portion may include a base portion (as an example, a base portion 121) and a plurality of support members (as an example, a plurality of support members 122).
- the base portion is arranged below the first holding portion.
- the plurality of support members can be raised and lowered with respect to the base portion to support the substrate whose surface is wet from below.
- the first gas supply unit may be provided on the base unit. By providing the first gas supply unit on the base unit, the gas can be easily supplied to the substrate that moves together with the second holding unit.
- the second holding portion may further include a plurality of grip portions (for example, a plurality of grip portions 123).
- the plurality of grips grip the substrate whose surface is wet from the side. By gripping the substrate whose surface is wet by using the plurality of grip portions from the side, it is possible to suppress the displacement of the substrate due to the gas supplied from the first gas supply portion.
- the first gas supply unit may include a plurality of discharge ports (for example, a plurality of discharge ports 124a).
- the plurality of discharge ports discharge gas toward the outer peripheral portion of the back surface of the substrate. As a result, it is possible to more reliably suppress the spillage of the liquid to the back surface of the substrate.
- the gas supply unit may include a second gas supply unit (for example, a second gas supply unit 35).
- the second gas supply unit is provided in the drying processing unit.
- the second gas supply unit 35 By providing the second gas supply unit 35 in the drying processing unit, for example, the liquid on the back surface of the substrate from the time when the substrate having a wet surface is carried into the drying processing unit until the drying processing is started. It is possible to suppress the wraparound of.
- the drying processing unit further includes a processing container (processing container 31 as an example), a third holding unit (third holding unit 32 as an example), and a moving mechanism (moving mechanism 33a as an example).
- the processing container is dried.
- the third holding portion holds the substrate whose surface is wet.
- the moving mechanism moves the third holding portion between the delivery area adjacent to the processing container (delivery area 182 as an example) and the inside of the processing container.
- the second gas supply unit may be provided in the delivery area.
- the gas supply unit may supply the inert gas to the back surface of the substrate.
- the inert gas for example, oxidation of the substrate can be suppressed.
- the surface of the substrate may be wetted in the liquid treatment unit, and the surface of the substrate is not necessarily the same. It is not necessary to form a liquid film on the surface.
Abstract
Description
まず、実施形態に係る基板処理システムの構成について図1を参照して説明する。図1は、実施形態に係る基板処理システムの構成を示す図である。
次に、搬送エリア15に配置される搬送装置16の構成について図2を参照して説明する。図2は、実施形態に係る搬送装置16の構成を示す側面図である。
次に、液処理ユニット17の構成について図6を参照して説明する。図6は、実施形態に係る液処理ユニット17の構成を示す図である。液処理ユニット17は、たとえば、スピン洗浄によりウェハWを1枚ずつ洗浄する枚葉式の洗浄装置として構成される。
次に、乾燥処理ユニット18の構成について図7~図9を参照して説明する。図7は、実施形態に係る乾燥処理ユニット18の外観斜視図である。図8は、実施形態に係る第3保持部の平面図である。図9は、実施形態に係る第3保持部の側断面図である。
次に、基板処理システム1の具体的な動作について図10~図20を参照して説明する。図10は、実施形態に係る基板処理システム1が実行する処理の手順を示すフローチャートである。なお、図10には、ウェハWが液処理ユニット17に搬入されてから乾燥処理ユニットから搬出されるまでの処理手順の一例を示している。また、図11~図20は、実施形態に係る搬送装置16の動作例を示す図である。図10に示す各処理手順は、制御部61による制御に従って実行される。
搬送装置16は、第1パージ処理において、第1気体供給部124から供給される気体の流量を搬送装置16の動きに応じて変更してもよい。
1 基板処理システム
2 搬入出ステーション
3 処理ステーション
5 処理ブロック
16 搬送装置
17 液処理ユニット
18 乾燥処理ユニット
19 供給ユニット
31 処理容器
32 第3保持部
35 第2気体供給部
110 第1保持部
120 第2保持部
121 ベース部
122 支持部材
123 把持部
124 第1気体供給部
125 排液部
130 第1進退機構
140 第2進退機構
150 昇降機構
160 水平移動機構
Claims (10)
- 基板に対して液処理を行うことによって前記基板の表面を濡らす液処理部と、
前記液処理部と異なる場所に配置され、前記表面が濡れた前記基板を乾燥させる乾燥処理を行う乾燥処理部と、
前記表面が濡れた前記基板を前記液処理部から取り出して前記乾燥処理部へ搬送する搬送部と、
前記表面が濡れた前記基板が前記液処理部から取り出されてから前記乾燥処理部において前記乾燥処理が開始されるまでの期間のうち少なくとも一部の期間において、前記表面が濡れた前記基板の裏面に気体を供給する気体供給部と
を備える、基板処理装置。 - 前記気体供給部は、
前記搬送部に設けられた第1気体供給部
を含む、請求項1に記載の基板処理装置。 - 前記搬送部は、
前記表面が濡れた前記基板を前記液処理部から受け取る第1保持部と、
前記表面が濡れた前記基板を前記第1保持部から受け取って前記乾燥処理部へ搬送する第2保持部と、
前記液処理部および前記乾燥処理部間において前記第1保持部および前記第2保持部を移動させる水平移動機構と
を備え、
前記第1気体供給部は、
前記第2保持部に設けられる、請求項2に記載の基板処理装置。 - 前記第2保持部は、
前記第1保持部の下方に配置されるベース部と、
前記ベース部に対して昇降可能であり、前記表面が濡れた前記基板を下方から支持する複数の支持部材と
を備え、
前記第1気体供給部は、
前記ベース部に設けられる、請求項3に記載の基板処理装置。 - 前記第2保持部は、
前記表面が濡れた前記基板を側方から把持する複数の把持部
をさらに備える、請求項4に記載の基板処理装置。 - 前記第1気体供給部は、
前記基板の裏面の外周部に向けて前記気体を吐出する複数の吐出口を備える、請求項2~5のいずれか一つに記載の基板処理装置。 - 前記気体供給部は、
前記乾燥処理部に設けられた第2気体供給部
を含む、請求項1~6のいずれか一つに記載の基板処理装置。 - 前記乾燥処理部は、
前記乾燥処理が行われる処理容器と、
前記表面が濡れた前記基板を保持する第3保持部と、
前記処理容器に隣接する受渡エリアと前記処理容器の内部との間で前記第3保持部を移動させる移動機構と
をさらに備え、
前記第2気体供給部は、
前記受渡エリアに設けられる、請求項7に記載の基板処理装置。 - 前記気体供給部は、
前記基板の裏面に対して不活性ガスを供給する、請求項1~8のいずれか一つに記載の基板処理装置。 - 基板に対して液処理を行う液処理部を用いて前記基板の表面を濡らす工程と、
前記液処理部と異なる場所に配置され、前記表面が濡れた前記基板を乾燥させる乾燥処理部を用いて前記表面が濡れた前記基板を乾燥させる工程と、
前記表面が濡れた前記基板を前記液処理部から取り出して前記乾燥処理部へ搬送する工程と、
前記表面が濡れた前記基板が前記液処理部から取り出されてから前記乾燥処理部において前記乾燥させる工程が開始されるまでの期間のうち少なくとも一部の期間において、前記表面が濡れた前記基板の裏面に気体を供給する工程と
を含む、基板処理方法。
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WO2005036623A1 (ja) * | 2003-10-08 | 2005-04-21 | Zao Nikon Co., Ltd. | 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法 |
JP2008243935A (ja) * | 2007-03-26 | 2008-10-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2018147970A (ja) * | 2017-03-02 | 2018-09-20 | 東京エレクトロン株式会社 | 基板処理装置 |
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JP2008243935A (ja) * | 2007-03-26 | 2008-10-09 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
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CN114258581A (zh) | 2022-03-29 |
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