JP7361865B2 - 基板処理システム - Google Patents
基板処理システム Download PDFInfo
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- JP7361865B2 JP7361865B2 JP2022168071A JP2022168071A JP7361865B2 JP 7361865 B2 JP7361865 B2 JP 7361865B2 JP 2022168071 A JP2022168071 A JP 2022168071A JP 2022168071 A JP2022168071 A JP 2022168071A JP 7361865 B2 JP7361865 B2 JP 7361865B2
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Description
〔1.基板処理システムの構成〕
まず、実施形態に係る基板処理システムの構成について図1を参照して説明する。図1は、第1の実施形態に係る基板処理システムを上方から見た模式的な断面図である。なお、以下では、位置関係を明確にするために、互いに直交するX軸、Y軸およびZ軸を規定し、Z軸正方向を鉛直上向き方向とする。
搬入出ステーション2は、キャリア載置部11と、搬送部12とを備える。キャリア載置部11には、複数枚の半導体ウェハ(以下、「ウェハW」と記載する)を水平状態で収容する複数のキャリアCが載置される。
処理ステーション3は、搬送部12に隣接して設けられる。処理ステーション3は、搬送ブロック4と、複数(ここでは、2つ)の処理ブロック5_1,5_2とを備える。
搬送ブロック4は、搬送エリア15と、搬送装置16とを備える。搬送エリア15は、たとえば、搬入出ステーション2および処理ステーション3の並び方向(X軸方向)に沿って延在する直方体状の領域である。
基板処理システム1は、制御装置6を備える。制御装置6は、たとえばコンピュータであり、制御部61と記憶部62とを備える。
次に、上述した基板処理システム1における一連の基板処理の流れについて図2および図3を参照して説明する。図2は、第1の実施形態に係る基板処理システム1において実行される一連の基板処理の手順を示すフローチャートである。なお、図2に示す一連の基板処理は、制御部61の制御に従って実行される。
次に、液処理ユニット17の構成について図3を参照して説明する。図3は、液処理ユニット17の構成例を示す図である。液処理ユニット17は、たとえば、スピン洗浄によりウェハWを1枚ずつ洗浄する枚葉式の洗浄装置として構成される。
つづいて、乾燥ユニット18の構成について図4および図5を参照して説明する。図4は、第1の実施形態に係る乾燥ユニット18の構成を示す模式断面図である。また、図5は、処理容器の内部に複数のウェハWが収容された状態の一例を示す模式断面図である。
乾燥ユニット18では、まず、2枚のウェハWの搬入処理が行われる。搬入処理において、乾燥ユニット18は、X軸負方向側に配置された蓋体32aを移動機構321によってX軸正方向側に水平移動させ、X軸正方向側に配置された蓋体32bをX軸負方向側に移動機構321によって水平移動させる。これにより、2つの保持部33a,33bにそれぞれ保持された2枚のウェハWが処理容器31の処理空間311に収容されるとともに、2つの蓋体32a,32bによって処理空間311が密閉された状態となる。なお、2つの蓋体32a,32bを移動させる順番やタイミングは、特に限定されない。
図7は、第2の実施形態に係る乾燥ユニットの構成を示す模式断面図である。なお、以下の各実施形態では、理解を容易にするために、乾燥ユニットの構成の一部を省略して示す場合がある。
図8は、第3の実施形態に係る乾燥ユニットの構成を示す模式断面図である。図8に示すように、第3の実施形態に係る乾燥ユニット18Bは、補充部50を備える。補充部50は、2つの受渡エリア182のうち、乾燥ユニット18Bに最初に搬送されるウェハWの搬送先となる受渡エリア182(ここでは、受渡エリア182a)に配置され、受渡エリア182aにおいて保持部33aに保持されたウェハWの上面にIPAを補充する。
図9は、第4の実施形態に係る乾燥ユニットの構成を示す模式断面図である。図9に示すように、第4の実施形態に係る乾燥ユニット18Cは、2つの受渡エリア182のうち、乾燥ユニット18Bに最初に搬送されるウェハWの搬送先となる受渡エリア182(ここでは、受渡エリア182a)を囲う箱体51を備える。箱体51は、受渡エリア182aに配置される蓋体32a、保持部33aおよびウェハWを収容可能である。また、第4の実施形態に係る乾燥ユニット18Cは、箱体51の内部にIPA雰囲気を供給する雰囲気供給部52を備える。
図10は、第5の実施形態に係る乾燥ユニットの構成を示す模式断面図である。図10に示すように、第5の実施形態に係る乾燥ユニット18Dは、処理容器31Dと、2つの蓋体32Da,32Dbと、4つの保持部33e~33hを備える。
図11は、第6の実施形態に係る乾燥ユニットの構成を示す模式断面図である。図11に示すように、第6の実施形態に係る乾燥ユニット18Eは、1つの開口312Eを有する処理容器31Eと、1つの蓋体32Eと、複数の保持部33Ea~33Ecとを備える。複数(ここでは、3つ)の保持部33Ea~33Ecは、1つの蓋体32Eに設けられる。
図13は、第7の実施形態に係る乾燥ユニットの構成を示す模式断面図である。図13に示すように、第7の実施形態に係る乾燥ユニット18Fは、処理容器31Fと、蓋体32Fと、複数の保持部33Fとを備える。
第1~4の実施形態では、処理容器31が有する複数の側面のうち互いに対向する2つの側面にそれぞれ開口312を1つずつ設け、一方のウェハWを一方の開口312から、他方のウェハWを反対側の開口312から搬入することとした。これに限らず、2つの開口312は、処理容器31が有する複数の側面のうち互いに直交する2つの側面にそれぞれ設けられてもよい。たとえば、処理容器31が有する複数の側面のうち、X軸負方向側の側面とY軸負方向側の側面とに開口312が設けられてもよい。第5の実施形態に係る蓋体32Dについても同様である。
1 基板処理システム
16 搬送装置
17 液処理ユニット
18 乾燥ユニット
31 処理容器
32 蓋体
33 保持部
35 供給部
37 排出部
42 ロック部材
43 昇降機構
181 処理エリア
182 受渡エリア
311 処理空間
312 開口
321 移動機構
Claims (5)
- 超臨界状態の処理流体を用いて基板を乾燥させる乾燥処理が行われる乾燥ユニットと、
前記乾燥ユニットに対する前記基板の搬入出を行う搬送装置と
を備え、
前記乾燥ユニットは、
前記乾燥処理が行われる処理容器と、
前記処理容器の第1の側面に設けられた第1の開口を開閉可能な第1の蓋体と、
前記処理容器の第2の側面に設けられた第2の開口を開閉可能な第2の蓋体と、
前記基板を保持する保持部であって、前記第1の蓋体に設けられ、前記第1の蓋体によって前記第1の開口が閉じられた状態において前記処理容器の内部に収容される第1の保持部と、
前記第1の保持部が保持する前記基板とは異なる前記基板を保持する保持部であって、前記第2の蓋体に設けられ、前記第2の蓋体によって前記第2の開口が閉じられた状態において前記処理容器の内部に収容される第2の保持部と
を備え、
前記第1の開口および前記第2の開口が開かれた状態において、前記処理容器、前記第1の保持部および前記第2の保持部は、前記搬送装置が配置される搬送エリアに沿って前記第1の保持部、前記処理容器および前記第2の保持部の順番に並べられる、基板処理システム。 - 前記基板に対して液処理を行う液処理ユニットを備え、
前記第1の開口および前記第2の開口が開かれた状態において、前記処理容器、前記第1の保持部、前記第2の保持部および前記液処理ユニットは、前記搬送エリアに沿って前記液処理ユニット、前記第1の保持部、前記処理容器および前記第2の保持部の順番に並べられる、請求項1に記載の基板処理システム。 - 前記乾燥ユニットおよび前記液処理ユニットを含む処理ブロックを2つ備え、
2つの前記処理ブロックのうち一方は、前記搬送エリアの一方側に配置され、2つの前記処理ブロックのうち他方は、前記搬送エリアの他方側に配置される、請求項2に記載の基板処理システム。 - 一の前記処理ブロックに含まれる前記乾燥ユニットは、当該一の処理ブロックに含まれる前記液処理ユニットによって前記液処理が行われた前記基板に対して前記乾燥処理を行う、請求項3に記載の基板処理システム。
- 前記処理ブロックは、前記液処理ユニットとして、第1の液処理ユニットと第2の液処理ユニットを含み、
前記搬送装置は、前記第1の液処理ユニットによって前記液処理が行われた前記基板を前記第1の保持部に搬送し、前記第2の液処理ユニットによって前記液処理が行われた前記基板を前記第2の保持部に搬送する、請求項3または4に記載の基板処理システム。
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JP2009038328A (ja) | 2007-08-06 | 2009-02-19 | Ryusyo Industrial Co Ltd | 超臨界流体洗浄装置 |
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