WO2021017226A1 - 显示面板及其制备方法 - Google Patents

显示面板及其制备方法 Download PDF

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Publication number
WO2021017226A1
WO2021017226A1 PCT/CN2019/114199 CN2019114199W WO2021017226A1 WO 2021017226 A1 WO2021017226 A1 WO 2021017226A1 CN 2019114199 W CN2019114199 W CN 2019114199W WO 2021017226 A1 WO2021017226 A1 WO 2021017226A1
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WO
WIPO (PCT)
Prior art keywords
flexible substrate
layer
structure layer
display panel
substrate
Prior art date
Application number
PCT/CN2019/114199
Other languages
English (en)
French (fr)
Inventor
蒋谦
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/623,502 priority Critical patent/US11508918B2/en
Publication of WO2021017226A1 publication Critical patent/WO2021017226A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • This application relates to a display technology, in particular to a display panel and a manufacturing method thereof.
  • the step of opening the hole is after the film layer of the organic light emitting diode panel structure is completed. This will cause atmospheric moisture to erode inward the metal layer and the organic light-emitting layer of the display area along the gap between the film layers of the opening section, and shorten the life of the organic light-emitting diode panel.
  • the embodiments of the present application provide a display panel and a manufacturing method thereof, so as to solve the problem that in the existing organic light-emitting diode panel, water vapor easily erodes the metal layer and the organic light-emitting layer in the display area along the gap between the film layers of the open section.
  • An embodiment of the present application provides a display panel that includes a flexible substrate and a thin film transistor array structure layer, an organic light-emitting structure layer, and an encapsulation structure layer sequentially disposed on the flexible substrate, wherein the display panel Comprising a through hole which penetrates the thin film transistor array structure layer and the flexible substrate;
  • the organic light emitting structure layer and the packaging structure layer cover the peripheral sidewall of the through hole
  • the display panel further includes: a barrier dam disposed on the thin film transistor array structure layer and surrounding the through hole;
  • the blocking dam includes at least one first blocking dam and at least one second blocking dam; the second blocking dam is close to the through hole, and the first blocking dam is arranged at the second blocking dam away from the through hole One side is used to block the organic light emitting structure layer;
  • the width of the first barrier dam increases from an end close to the flexible substrate to an end far away from the flexible substrate;
  • the width of the second barrier dam decreases from an end close to the flexible substrate to an end away from the flexible substrate.
  • the distance between two adjacent second barrier dams is greater than the height of the second barrier dam.
  • the embodiment of the present application provides a method for manufacturing a display panel, which includes the following steps:
  • the substrate including at least one predetermined opening area
  • An organic light-emitting structure layer and an encapsulation structure layer are sequentially formed on the pixel definition layer, wherein the organic light-emitting structure layer and the encapsulation structure layer cover the peripheral sidewall of the through hole and the substrate corresponding to the The surface of the through hole;
  • the substrate is peeled off, so that the film layer covering the predetermined opening area of the substrate is peeled off.
  • the raised ring includes a first raised ring and a second raised ring
  • the flexible substrate includes a first substrate and a second substrate
  • the step of disposing a convex ring on the predetermined opening area and forming a flexible substrate covering the convex ring on the substrate includes the following steps:
  • a second flexible substrate covering the second raised ring is formed on the first flexible substrate, and the orthographic projection of the second raised ring on the substrate is sleeved on the first raised ring.
  • the outer peripheral side of the orthographic projection of the substrate is formed on the first flexible substrate, and the orthographic projection of the second raised ring on the substrate is sleeved on the first raised ring.
  • the through holes are formed in the thin film transistor array structure layer by etching.
  • the barrier dam includes at least one first barrier dam and at least one second barrier dam; the second barrier dam is close to the through hole, and the first barrier dam is disposed at The side of the second barrier dam away from the through hole is used to isolate the organic light emitting structure layer;
  • the width of the first barrier dam increases from an end close to the base plate to an end far away from the base plate;
  • the width of the second barrier dam decreases from an end close to the base plate to an end far away from the base plate.
  • the number of the second barrier dam is two, and the distance between two adjacent second barrier dams is greater than the height of the second barrier dam.
  • the flexible substrate is cut along the extending direction of the convex ring, and the part of the flexible substrate arranged in the convex ring is removed to make The through hole penetrates the flexible substrate, and previously includes the following steps:
  • a photoresist protection layer is formed on the pixel defining layer, and the photoresist protection layer covers the entire substrate.
  • forming an organic light emitting structure layer on the pixel definition layer includes the following steps:
  • the flexible substrate is cut under the condition of protective gas, and the peripheral side of the purge nozzle of the cutting device is provided with an exhaust gas extractor for extracting the production during the cutting process.
  • the dust and exhaust gas is provided.
  • the packaging structure layer includes an inorganic packaging layer and an organic packaging layer disposed between two inorganic packaging layers;
  • the width of the raised ring is equal to the width of the cutting laser spot.
  • the present application also relates to a display panel, which includes a flexible substrate and a thin film transistor array structure layer, an anode, a pixel definition layer, an organic light emitting structure layer, and an encapsulation structure layer sequentially arranged on the flexible substrate.
  • the display panel includes a through hole that penetrates the thin film transistor array structure layer and the flexible substrate;
  • the organic light emitting structure layer and the packaging structure layer cover the peripheral sidewall of the through hole.
  • the display panel further includes a barrier dam provided in the same layer as the pixel definition layer;
  • the blocking dam includes at least one first blocking dam and at least one second blocking dam; the second blocking dam is close to the through hole, and the first blocking dam is arranged at the second blocking dam away from the through hole One side is used to block the organic light emitting structure layer;
  • the width of the first barrier dam increases from an end close to the flexible substrate to an end away from the flexible substrate.
  • the width of the second barrier dam decreases from an end close to the flexible substrate to an end away from the flexible substrate.
  • the distance between two adjacent second barrier dams is greater than the height of the second barrier dam.
  • the display panel of the present application and the preparation method thereof one is to reduce the thickness of the portion of the flexible substrate corresponding to the raised ring by providing a raised ring, so as to achieve a gentle laser cut point and reduce the cutting film Thickness to avoid curling of the cutting edge of the flexible substrate;
  • through holes are formed in the portion corresponding to the predetermined opening area to reduce the film thickness of the predetermined opening area and reduce the dust and harmful gas generated by laser cutting;
  • this application first forms the through hole, and then covers the surface of the through hole with the packaging structure layer, so that the packaging structure layer covers the peripheral side of the through hole, which solves the problem that water vapor is easy to follow the opening in the existing organic light emitting diode panel.
  • the gap between the film layers of the cross-section corrodes the metal layer and the organic light-emitting layer in the display area and shortens the lifetime of the organic light-emitting diode panel.
  • FIG. 1 is a schematic flowchart of a method for manufacturing a display panel according to a first embodiment of the application
  • step S2 is completed
  • FIG. 3 is a schematic structural diagram of the method for manufacturing a display panel according to the first embodiment of the application after step S3 is completed;
  • FIG. 4 is a schematic structural diagram of the method for manufacturing a display panel according to the first embodiment of the application after step S4 is completed;
  • FIG. 5 is a schematic structural diagram of the method for manufacturing a display panel according to the first embodiment of the application after step S5 is completed;
  • FIG. 6 is a schematic structural diagram of the method for manufacturing a display panel according to the first embodiment of the application after step S6 is completed;
  • FIG. 7 is a schematic structural diagram of the method for manufacturing a display panel according to the first embodiment of the application after step S7 is completed;
  • FIG. 8 is a schematic structural diagram of the manufacturing method of the display panel according to the first embodiment of the application after step S8 is completed;
  • FIG. 9 is a schematic structural diagram of the method for manufacturing a display panel according to the first embodiment of the application after step S9 is completed;
  • step S10 is completed
  • step S2 is completed
  • FIG. 12 is a schematic flowchart of a manufacturing method of a display panel according to a third embodiment of the application.
  • FIG. 13 is a schematic structural diagram of a display panel according to an embodiment of the application.
  • FIG. 1 is a schematic flowchart of a manufacturing method of a display panel according to a first embodiment of the application.
  • the embodiment of the present application provides a method for manufacturing a display panel, which includes the following steps:
  • Step S1 providing a substrate, the substrate including at least one predetermined opening area
  • Step S2 providing at least one layer of raised ring on the predetermined opening area, and forming a flexible substrate covering the raised ring on the substrate;
  • Step S3 forming a thin film transistor array structure layer on the flexible substrate, wherein a portion of the thin film transistor array structure layer corresponding to the predetermined opening area forms a through hole;
  • Step S4 forming a pixel definition layer and a barrier dam in the same layer on the thin film transistor array structure layer, and the barrier dam is arranged on the outer peripheral side of the through hole;
  • Step S5 forming a photoresist protection layer on the pixel definition layer, the photoresist protection layer covering the entire substrate;
  • Step S6 cutting the flexible substrate along the extending direction of the convex ring, and removing the part of the flexible substrate arranged in the convex ring, so that the through hole penetrates the flexible substrate;
  • Step S7 removing the photoresist protection layer
  • Step S8 an organic light-emitting structure layer and an encapsulation structure layer are sequentially formed on the pixel definition layer, wherein the organic light-emitting structure layer and the encapsulation structure layer cover the peripheral sidewalls of the through hole corresponding to the substrate The surface of the through hole;
  • Step S9 Peel off the substrate to make the film covering the predetermined opening area of the substrate fall off.
  • Step S1 Provide a substrate 11.
  • the substrate 11 includes at least one predetermined opening area 11a.
  • the predetermined opening area 11a is used to form the through hole 21 of the display panel of the first embodiment.
  • the substrate 11 is a rigid substrate, such as a glass substrate. Then go to step S2.
  • Step S2 Set at least one layer of raised ring 12 on the predetermined opening area 11a, and form a flexible substrate 13 covering the raised ring 12 on the substrate 11.
  • the raised ring 12 includes a first raised ring 121 and a second raised ring 122.
  • the flexible substrate 13 includes a first substrate 131 and a second substrate 132.
  • Step S2 Disposing at least one layer of raised ring 12 on the predetermined opening area 11a, and forming a flexible substrate 13 covering the raised ring 12 on the substrate 11 includes the following steps:
  • a first raised ring 121 is provided on the predetermined opening area 11a;
  • a second raised ring 122 is provided on the first flexible substrate 131;
  • a second flexible substrate 13 covering the second convex ring 122 is formed on the first flexible substrate 131.
  • the orthographic projection of the second convex ring 122 on the substrate 11 is sleeved on the outer peripheral side of the orthographic projection of the first convex ring 121 on the substrate 11.
  • the first flexible substrate 131 and the second flexible substrate 132 are both manufactured by coating method.
  • This manufacturing method makes the flexible substrate at the corresponding part of the first raised ring 121 and the second raised ring 122
  • the film layer is thinner, thereby reducing the amount of cutting of the flexible substrate, reducing the generation of dust and exhaust gas during the laser cutting process, and achieving a gentle laser cutting point, avoiding curling of the cutting edge of the flexible substrate.
  • the raised ring 12 also functions as a cutting mark, that is, the laser cuts along the extending direction of the raised ring 12. And the width of the raised ring 12 is equal to the width of the laser spot for cutting.
  • the laser cuts the second convex ring 122 first, and then cuts the first convex ring 121 to form a through hole 21 penetrating the flexible substrate 13.
  • the material of the flexible substrate 13 is polyimide.
  • the material of the convex ring 12 may be one of organic photoresist, inorganic nitride, inorganic oxide or metal material.
  • Step S3 forming a thin film transistor array structure layer 15 on the flexible substrate 13.
  • the portion of the thin film transistor array structure layer 15 corresponding to the predetermined opening area 11 a forms a through hole 21.
  • step S3 it also includes forming a flat layer 14 on the flexible substrate 13.
  • the thin film transistor array structure layer 15 is disposed on the flat layer 14.
  • the thin film transistor array structure layer 15 includes an active layer, a gate metal layer, a source/drain metal layer, an insulating layer disposed between the three, and an interlayer disposed on the source/drain metal layer. Medium layer.
  • the thin film transistor array structure layer 15 is a prior art, and will not be repeated here.
  • the through holes 21 are formed in the thin film transistor array structure layer 15 by etching. That is, in the foregoing process of forming a series of film layers of the thin film transistor array structure layer 15, if the film layer itself has a microstructure such as a pattern or an opening, it is patterned synchronously in the portion corresponding to the predetermined opening area 11a to form and predetermined opening.
  • the hole area 11a is a film hole with a similar size.
  • dry etching can be used to form openings of equivalent size in the portion corresponding to the predetermined opening region 11a. For example, the insulating layer between the gate metal layer and the active layer.
  • the film layer itself has no pattern or hole microstructure, and can be formed on the flat layer 14 layer by layer.
  • through holes 21 are formed in the thin film transistor array structure layer 15 to reduce the thickness of the film layer corresponding to the predetermined opening area 11a, reduce dust and harmful gases generated by laser cutting, and facilitate subsequent cutting operations.
  • Step S4 forming a pixel defining layer 16 and a blocking dam 17 arranged in the same layer on the thin film transistor array structure layer 15, and the blocking dam 17 is arranged on the outer peripheral side of the through hole 21.
  • the blocking dam 17 includes a first blocking dam 171 and a second blocking dam 172.
  • the second blocking dam 172 is close to the through hole 21.
  • the first blocking dam 171 is disposed on a side of the second blocking dam 172 away from the through hole 21 to isolate the organic light emitting structure layer 18.
  • the width of the first blocking dam 171 increases from the end close to the base plate 11 to the end far away from the base plate 11.
  • the shape of the vertical cross section of the first blocking dam 171 is an inverted trapezoid.
  • the number of the second blocking dam 172 is two, and the number of the first blocking dam 171 is also two.
  • the number of the first blocking dam 171 and the second blocking dam 172 of the present application is not limited to this.
  • the distance between two second barrier dams 172 is greater than the height of one second barrier dam 172. This arrangement ensures that the inorganic encapsulation layer 191 of the subsequent packaging structure layer 19 is flat between the second barrier dams 172. Lay the film layer.
  • the second barrier dam 172 plays a role of preventing overflow of the organic packaging layer 192 of the packaging structure layer 19 on the one hand; on the other hand, it plays a role of separating the through hole 21 and the light-emitting pixel area.
  • the light-emitting pixel area is an area with display light emission.
  • the pixel definition layer 16 is provided with an opening, and the opening exposes the anode.
  • Step S5 forming a photoresist protection layer 22 on the pixel definition layer 16, and the photoresist protection layer 22 covers the entire substrate 11.
  • the photoresist protective layer 22 is provided to prevent large particles of foreign matter, dust, etc. from falling on the surface of the film layer on the substrate. Then go to step S6.
  • Step S6 Cut the flexible substrate 13 along the extending direction of the raised ring 12, and remove the part of the flexible substrate 13 arranged in the raised ring 12, so that the through hole 21 penetrates The flexible substrate 13;
  • the cutting device first cuts the film layer above the second convex ring 122 along the second convex ring 122 and removes the cut film layer, and then along the first convex ring 122
  • the lifting ring 121 cuts the film layer above the first convex ring 121 and removes the cut film layer, so that the through hole 21 penetrates the flat layer 14 and the flexible substrate 13 and exposes the substrate 11.
  • the flexible substrate 13 and the flat layer 14 are cut under the condition of protective gas, and the peripheral side of the purge nozzle of the cutting device is provided with an exhaust gas extractor for extracting the cutting process
  • the generated dust and exhaust gas can reduce the dust formed by cutting falling on the surface of the film layer on the substrate 11.
  • Step S7 Remove the photoresist protective layer 22.
  • the photoresist protective layer 22 is removed by using a removing film. Please refer to Figure 7. Then go to step S8.
  • Step S8 an organic light-emitting structure layer 18 and an encapsulation structure layer 19 are sequentially formed on the pixel definition layer 16, wherein the organic light-emitting structure layer 18 and the encapsulation structure layer 19 cover the circumference of the through hole 21
  • the sidewall and the substrate 11 correspond to the surface of the through hole 21.
  • the organic light emitting structure layer 18 includes a hole injection layer formed by evaporation, a hole transport layer, a red light emitting layer, a green light emitting layer, a blue light emitting layer, a hole blocking layer, an electron transport layer, and electron injection. Layer and cathode etc. Since the organic light-emitting structure layer 18 is a prior art, it will not be repeated here.
  • the organic light emitting structure layer 18 is disposed on the anode and extends to the through hole 21. At the position of the first barrier dam 171, because the thickness of the organic light emitting structure layer 18 is on the nanometer level, the organic light emitting structure layer 18 is cut off by the step of the first barrier dam 171.
  • the encapsulation structure layer 19 includes an inorganic encapsulation layer 191 and an organic encapsulation layer 192 disposed between two inorganic encapsulation layers 191.
  • the two inorganic encapsulation layers 191 cover the entire film layer above the substrate 11.
  • the thickness of the inorganic encapsulation layer 191 is usually between 1 ⁇ m and 50 ⁇ m.
  • the inorganic encapsulation layer 191 can normally cover the first barrier dam 171, the second barrier dam 172, and the multilayer film steps around the through hole.
  • This arrangement enables the organic light emitting structure layer 18 and the encapsulation structure layer 19 to cover the peripheral side of the through hole 21 and prevents water vapor from corroding the metal layer and the organic light emitting layer in the display area along the gap between the film layers of the opening section.
  • the organic encapsulation layer 192 is formed in the light-emitting pixel area using an inkjet printing method.
  • Step S9 Peel off the substrate 11 to make the film covering the predetermined opening area 11a of the substrate 11 fall off.
  • a laser tube is used to scan the substrate 11 from the reverse side of the display panel of the embodiment of the present application.
  • the laser thermal effect separates the upper surface of the substrate 11 and the lower surface of the flexible substrate 13.
  • the film layer on the predetermined opening area 11a is only a soft vapor-deposited organic film layer and a hard inorganic encapsulation layer, the film layer of the predetermined opening area 11a is pulled apart and peeled off during the peeling process.
  • a flexible organic light emitting display panel with in-plane openings with a complete structure is formed.
  • the flexible substrate 13 includes a first substrate 131 and a second substrate 132.
  • Step S2 of the manufacturing method of the display panel of the second embodiment the convex ring 12 is provided on the predetermined opening area 11a, and a flexible liner covering the convex ring 12 is formed on the substrate 11 Bottom 13, including the following steps:
  • a raised ring 12 is provided on the predetermined opening area 11a;
  • a second flexible substrate 132 is formed on the first flexible substrate 131.
  • the manufacturing method of the display panel in the third embodiment of the present application includes:
  • Step S1 Provide a substrate 11, which includes a predetermined opening area 11a;
  • Step S2 setting a raised ring 12 on the predetermined opening area 11a, and forming a flexible substrate 13 covering the raised ring 12 on the substrate 11;
  • Step S3 forming a thin film transistor array structure layer 15 on the flexible substrate 13, wherein a portion of the thin film transistor array structure layer 15 corresponding to the predetermined opening area 11a forms a through hole 21;
  • Step S4 forming a pixel defining layer 16 and a barrier dam 17 arranged in the same layer on the thin film transistor array structure layer 15, and the barrier dam 17 is arranged on the outer peripheral side of the through hole 21;
  • Step S5 forming a photoresist protective layer 22 on the pixel defining layer 16, and the photoresist protective layer 22 covers the entire substrate 11;
  • Step S6 Cut the flexible substrate 13 along the extending direction of the raised ring 12, and remove the part of the flexible substrate 13 arranged in the raised ring 12, so that the through hole 21 penetrates The flexible substrate 13;
  • Step S7 Remove the photoresist protective layer 22;
  • Step S8 an organic light-emitting structure layer 18 and an encapsulation structure layer 19 are sequentially formed on the pixel definition layer 16, wherein the organic light-emitting structure layer 18 and the encapsulation structure layer 19 cover the circumference of the through hole 21
  • the side wall and the substrate 11 correspond to the surface of the through hole 21;
  • Step S9 cutting the inorganic packaging layer 191 on the substrate 11 corresponding to the predetermined opening area 11a;
  • Step S10 peeling off the substrate 11, so that the film covering the predetermined opening area 11a of the substrate 11 is peeled off.
  • the manufacturing method of the display panel of the third embodiment of the present application adds a step S9.
  • a laser is used to cut the inorganic encapsulation layer 191 on the predetermined opening area 11a of the substrate 11, so as to prevent the inorganic encapsulation layer 191 from extending to the second barrier dam 172 from cracks generated in the area of the substrate 11 during the peeling process.
  • steps S5 and S7 can be omitted. Such an arrangement simplifies the preparation process.
  • the present application also relates to a display panel 100.
  • the display panel 100 includes a flexible substrate 11, a flat layer 12, a thin film transistor array structure layer 13, and an anode 14 sequentially disposed on the flexible substrate 11. , The pixel defining layer 15, the organic light emitting structure layer 16, and the packaging structure layer 17.
  • the display panel 100 includes through holes 21. The through hole 21 penetrates the thin film transistor array structure layer 13 and the flexible substrate 11 and the flat layer 12.
  • the organic light emitting structure layer 16 and the packaging structure layer 17 cover the peripheral sidewall of the through hole 21.
  • the display panel 100 of the embodiment of the present application covers the packaging structure layer 17 on the surface of the through hole 21, so that the packaging structure layer 17 covers the peripheral side of the through hole 21, thereby avoiding the gap between the film layers along the cross section of the through hole. Corrodes the metal layer and organic light-emitting layer in the display area.
  • the display panel 100 further includes a barrier dam provided in the same layer as the pixel definition layer 15.
  • the blocking dam includes a first blocking dam 181 and a second blocking dam 182.
  • the second blocking dam 182 is close to the through hole 21.
  • the first blocking dam 181 is disposed on a side of the second blocking dam 182 away from the through hole 21 to isolate the organic light emitting structure layer 16.
  • the width of the first barrier dam 181 increases from an end close to the flexible substrate 11 to an end away from the flexible substrate 11.
  • the width of the second blocking dam 182 decreases from an end close to the flexible substrate 11 to an end away from the flexible substrate 11.
  • the distance between two adjacent second blocking dams 182 is greater than the height of the second blocking dams 182.
  • the manufacturing method of the display panel of the embodiment of the present application may be any one of the first embodiment to the fourth embodiment of the manufacturing method of the display panel of the present application.
  • the method for manufacturing the display panel and the display panel of the present application firstly reduces the thickness of the portion of the flexible substrate corresponding to the raised ring by providing a raised ring, so as to achieve a gentle laser cut point and reduce Cut the film thickness to avoid curling of the cutting edge of the flexible substrate;
  • through holes are formed in the portion corresponding to the predetermined opening area to reduce the film thickness of the predetermined opening area and reduce the dust and harmful gas generated by laser cutting;
  • this application first forms the through hole, and then covers the surface of the through hole with the packaging structure layer, so that the packaging structure layer covers the peripheral side of the through hole, which solves the problem that water vapor is easy to follow the opening in the existing organic light emitting diode panel.
  • the gap between the film layers of the cross-section corrodes the metal layer and the organic light-emitting layer in the display area and shortens the lifetime of the organic light-emitting diode panel.

Abstract

一种显示面板（100）及其制备方法，本显示面板（100）在像素定义层（15）上形成有机发光结构层（16）和封装结构层（17），有机发光结构层（16）和封装结构层（17）包覆通孔（21）的整个表面。该方法先形成通孔（21），再在通孔（21）的表面包覆有机发光结构层（16）和封装结构层（17），使得封装结构层（17）包覆通孔（21）的周侧，避免水汽沿着开孔断面的膜层之间的间隙侵蚀显示区的金属层。

Description

显示面板及其制备方法 技术领域
本申请涉及一种显示技术，特别涉及一种显示面板及其制备方法。
 背景技术
在现有的有机发光二极管装置中，为了设置摄像头，需要在有机发光二极管面板上开孔以露出摄像头。
但是在现有的工艺中，开孔的步骤在有机发光二极管面板结构膜层制作完成之后。这样会导致大气环境水汽沿着开孔断面的膜层之间的间隙向内侵蚀显示区的金属层和有机发光层，使有机发光二极管面板的寿命变短。
 技术问题
本申请实施例提供一种显示面板及其制备方法，以解决现有的有机发光二极管面板中，水汽容易沿着开孔断面的膜层之间的间隙侵蚀显示区的金属层和有机发光层，使有机发光二极管面板的寿命变短的技术问题。
 技术解决方案
本申请实施例提供一种显示面板，所述显示面板包括柔性衬底和依次设置在所述柔性衬底上的薄膜晶体管阵列结构层、有机发光结构层和封装结构层，其中，所述显示面板包括通孔，所述通孔贯穿所述薄膜晶体管阵列结构层和所述柔性衬底；
所述有机发光结构层和所述封装结构层包覆所述通孔的周侧壁；
所述显示面板还包括：设置在所述薄膜晶体管阵列结构层上且环绕所述通孔设置的阻挡坝；
所述阻挡坝包括至少一个第一阻挡坝和至少一个第二阻挡坝；所述第二阻挡坝靠近所述通孔，所述第一阻挡坝设置在所述第二阻挡坝远离所述通孔的一侧，用于隔断有机发光结构层；
在所述第一阻挡坝的竖直截面中，所述第一阻挡坝的宽度自靠近所述柔性衬底的一端向远离所述柔性衬底的一端递增；
在所述第二阻挡坝的竖直截面中，所述第二阻挡坝的宽度自靠近所述柔性衬底的一端向远离所述柔性衬底的一端递减。
在本申请的显示面板中，相邻两个所述第二阻挡坝之间的距离大于所述第二阻挡坝的高度。
本申请实施例提供一种显示面板的制备方法，其包括以下步骤：
提供一基板，所述基板包括至少一个预定开孔区域；
在所述预定开孔区域上设置至少一层凸起环，并在所述基板上形成覆盖所述凸起环的柔性衬底；
在所述柔性衬底上形成薄膜晶体管阵列结构层，其中所述薄膜晶体管阵列结构层对应于所述预定开孔区域的部分形成通孔；
在所述薄膜晶体管阵列结构层上形成同层设置的像素定义层和阻挡坝，所述阻挡坝围设在所述通孔的外周侧；
沿着所述凸起环的延伸方向切割所述柔性衬底，并去除所述柔性衬底设置在所述凸起环内的部分，使所述通孔贯穿所述柔性衬底；
在所述像素定义层上依次形成有机发光结构层和封装结构层，其中，所述有机发光结构层和所述封装结构层，包覆所述通孔的周侧壁和所述基板对应所述通孔的表面；
剥离所述基板，使覆盖在所述基板的预定开孔区域上的膜层脱落。
在本申请的显示面板的制备方法中，所述凸起环包括第一凸起环和第二凸起环，所述柔性衬底包括第一衬底和第二衬底；
所述在所述预定开孔区域上设置凸起环，并在所述基板上形成覆盖所述凸起环的柔性衬底，包括以下步骤：
在所述预定开孔区域上设置第一凸起环；
在所述基板上形成覆盖所述第一凸起环的第一柔性衬底；
在所述第一柔性衬底上设置第二凸起环；
在所述第一柔性衬底上形成覆盖所述第二凸起环的第二柔性衬底，所述第二凸起环于所述基板的正投影套设在所述第一凸起环于所述基板的正投影的外周侧。
在本申请的显示面板的制备方法中，所述薄膜晶体管阵列结构层通过刻蚀的方式形成所述通孔。
在本申请的显示面板的制备方法中，所述阻挡坝包括至少一个第一阻挡坝和至少一个第二阻挡坝；所述第二阻挡坝靠近所述通孔，所述第一阻挡坝设置在所述第二阻挡坝远离所述通孔的一侧，用于隔断有机发光结构层；
在所述第一阻挡坝的竖直截面中，所述第一阻挡坝的宽度自靠近所述基板的一端向远离所述基板的一端递增；
在所述第二阻挡坝的竖直截面中，所述第二阻挡坝的宽度自靠近所述基板的一端向远离所述基板的一端递减。
在本申请的显示面板的制备方法中，所述第二阻挡坝的数量为两个，相邻两个所述第二阻挡坝之间的距离大于所述第二阻挡坝的高度。
在本申请的显示面板的制备方法中，在所述沿着所述凸起环的延伸方向切割所述柔性衬底，并去除所述柔性衬底设置在所述凸起环内的部分，使所述通孔贯穿所述柔性衬底，之前还包括以下步骤：
在所述像素定义层上形成一光阻保护层，所述光阻保护层覆盖在整个所述基板上。
在本申请的显示面板的制备方法中，在所述在所述像素定义层上形成有机发光结构层，之前包括以下步骤：
去除所述光阻保护层。
在本申请的显示面板的制备方法中，在保护气的条件下，对所述柔性衬底进行切割，且切割设备的吹扫喷头的周侧设置有废气抽取器，用于抽取切割过程中产生的尘埃和废气。
在本申请的显示面板的制备方法中，所述封装结构层包括无机封装层和设置在两个无机封装层之间的有机封装层；
在所述剥离所述基板，之前还包括以下步骤：
对所述基板上的对应于所述预定开孔区域的所述无机封装层进行切割。
在本申请的显示面板的制备方法中，所述凸起环的宽度等于切割激光光斑的宽度。
本申请还涉及一种显示面板，所述显示面板包括柔性衬底和依次设置在所述柔性衬底上的薄膜晶体管阵列结构层、阳极、像素定义层、有机发光结构层和封装结构层，所述显示面板包括通孔，所述通孔贯穿所述薄膜晶体管阵列结构层和所述柔性衬底；
所述有机发光结构层和所述封装结构层包覆所述通孔的周侧壁。
在本申请的显示面板中，所述显示面板还包括与所述像素定义层同层设置的阻挡坝；
所述阻挡坝包括至少一个第一阻挡坝和至少一个第二阻挡坝；所述第二阻挡坝靠近所述通孔，所述第一阻挡坝设置在所述第二阻挡坝远离所述通孔的一侧，用于隔断有机发光结构层；
在所述第一阻挡坝的竖直截面中，所述第一阻挡坝的宽度自靠近所述柔性衬底的一端向远离所述柔性衬底的一端递增。
在本申请的显示面板中，在所述第二阻挡坝的竖直截面中，所述第二阻挡坝的宽度自靠近所述柔性衬底的一端向远离所述柔性衬底的一端递减。
在本申请的显示面板中，相邻两个所述第二阻挡坝之间的距离大于所述第二阻挡坝的高度。
 有益效果
相较于现有技术的显示面板，本申请的显示面板及其制备方法，一是通过设置凸起环，降低柔性衬底对应于凸起环部分的厚度，达到平缓激光切点，降低切割膜厚度，避免柔性衬底切割边缘卷曲；
二是在进行薄膜晶体管阵列结构层的制程中，在对应于预定开孔区域的部分形成通孔，以减薄预定开孔区域的膜层厚度，减少激光切割产生的粉尘和有害气体；
三是本申请先形成通孔，再在通孔的表面包覆封装结构层，使得封装结构层包覆通孔的周侧，解决了现有的有机发光二极管面板中，水汽容易沿着开孔断面的膜层之间的间隙侵蚀显示区的金属层和有机发光层，使有机发光二极管面板的寿命变短的技术问题。
 附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例，对于本领域普通技术人员而言，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本申请第一实施例的显示面板的制备方法的流程示意图；
图2为本申请第一实施例的显示面板的制备方法完成步骤S2的结构示意图；
图3为本申请第一实施例的显示面板的制备方法完成步骤S3的结构示意图；
图4为本申请第一实施例的显示面板的制备方法完成步骤S4的结构示意图；
图5为本申请第一实施例的显示面板的制备方法完成步骤S5的结构示意图；
图6为本申请第一实施例的显示面板的制备方法完成步骤S6的结构示意图；
图7为本申请第一实施例的显示面板的制备方法完成步骤S7的结构示意图；
图8为本申请第一实施例的显示面板的制备方法完成步骤S8的结构示意图；
图9为本申请第一实施例的显示面板的制备方法完成步骤S9的结构示意图；
图10为本申请第一实施例的显示面板的制备方法完成步骤S10的结构示意图；
图11为本申请第二实施例的显示面板的制备方法完成步骤S2的结构示意图；
图12为本申请第三实施例的显示面板的制备方法的流程示意图；
图13为本申请实施例的显示面板的结构示意图。
 本发明的实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例，其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1，图1为本申请第一实施例的显示面板的制备方法的流程示意图。本申请实施例提供一种显示面板的制备方法，其包括以下步骤：
步骤S1：提供一基板，所述基板包括至少一个预定开孔区域；
步骤S2：在所述预定开孔区域上设置至少一层凸起环，并在所述基板上形成覆盖所述凸起环的柔性衬底；
步骤S3：在所述柔性衬底上形成薄膜晶体管阵列结构层，其中所述薄膜晶体管阵列结构层对应于所述预定开孔区域的部分形成通孔；
步骤S4：在所述薄膜晶体管阵列结构层上形成同层设置的像素定义层和阻挡坝，所述阻挡坝围设在所述通孔的外周侧；
步骤S5：在所述像素定义层上形成一光阻保护层，所述光阻保护层覆盖在整个所述基板上；
步骤S6：沿着所述凸起环的延伸方向切割所述柔性衬底，并去除所述柔性衬底设置在所述凸起环内的部分，使所述通孔贯穿所述柔性衬底；
步骤S7：去除所述光阻保护层；
步骤S8：在所述像素定义层依次形成有机发光结构层和封装结构层，其中，所述有机发光结构层和所述封装结构层，包覆所述通孔的周侧壁和所述基板对应所述通孔的表面；
步骤S9：剥离所述基板，使覆盖在所述基板的预定开孔区域上的膜层脱落。
下面对本申请第一实施例的显示面板的制备方法进行阐述。
步骤S1：提供一基板11。基板11包括至少一个预定开孔区域11a。所述预定开孔区域11a用于形成本第一实施例的显示面板的通孔21。其中基板11为硬性基板，比如为玻璃基板。随后转入步骤S2。
步骤S2：在所述预定开孔区域11a上设置至少一层凸起环12，并在所述基板11上形成覆盖所述凸起环12的柔性衬底13。
请参照图2，具体的，所述凸起环12包括第一凸起环121和第二凸起环122。所述柔性衬底13包括第一衬底131和第二衬底132。
步骤S2：所述在所述预定开孔区域11a上设置至少一层凸起环12，并在所述基板11上形成覆盖所述凸起环12的柔性衬底13，包括以下步骤：
在所述预定开孔区域11a上设置第一凸起环121；
在所述基板11上形成覆盖所述第一凸起环121的第一柔性衬底131；
在所述第一柔性衬底131上设置第二凸起环122；
在所述第一柔性衬底131上形成覆盖所述第二凸起环122的第二柔性衬底13。所述第二凸起环122于所述基板11的正投影套设在所述第一凸起环121于所述基板11的正投影的外周侧。
其中，第一柔性衬底131和第二柔性衬底132均采用涂布法进行制作，这样的制作方式，使得在第一凸起环121和第二凸起环122对应的部分，柔性衬底的膜层薄化，进而减少对柔性衬底的切割量，减少激光切割过程中粉尘和废气的产生，同时达到平缓激光切点，避免柔性衬底切割边缘卷曲。
另外，第二凸起环122和第一凸起环121之间具有一定的距离，以便后期进行激光切割操作。在进行激光切割时，凸起环12还起到切割标识的作用，即激光沿着凸起环12的延伸方向进行切割。且凸起环12的宽度等于切割激光光斑的宽度。
在本第一实施例中，激光先切割第二凸起环122，再切割第一凸起环121，以形成通孔21贯穿柔性衬底13。
可选的，柔性衬底13的材料为聚酰亚胺。凸起环12的材料可以是有机光阻、无机氮化物、无机氧化物或金属材料中的一种。
随后转入步骤S3。
步骤S3：在所述柔性衬底13上形成薄膜晶体管阵列结构层15。其中所述薄膜晶体管阵列结构层15对应于所述预定开孔区域11a的部分形成通孔21。
另外在步骤S3之前还包括在柔性衬底13形成平坦层14。薄膜晶体管阵列结构层15设置在平坦层14上。
请参照图3，薄膜晶体管阵列结构层15包括有源层、栅极金属层、源/漏极金属层和设置在三者之间的绝缘层以及设置在源/漏极金属层上的层间介质层。其中薄膜晶体管阵列结构层15为现有技术，此处不再赘述。
在本第一实施例中，所述薄膜晶体管阵列结构层15通过刻蚀的方式形成通孔21。即在前述形成薄膜晶体管阵列结构层15的一系列膜层过程中，膜层本身具有图案或开孔等微观结构的，同步在对应于预定开孔区域11a的部分进行图案化，形成和预定开孔区域11a大小接近的膜层孔。比如栅极绝缘层、层间介质层等。而膜层本身没有图案或孔等微结构的，可以在对应于预定开孔区域11a的部分通过干法刻蚀形成大小相当的开孔。比如栅极金属层和有源层之间的绝缘层。
当然，在一些实施例中，膜层本身没有图案或孔微结构的，可以逐层叠加形成在平坦层14上。
本申请在薄膜晶体管阵列结构层15形成通孔21，起到降低预定开孔区域11a所对应的膜层的厚度，减少激光切割产生的粉尘和有害气体，且便于后期的切割操作。
随后转入步骤S4。
步骤S4：在所述薄膜晶体管阵列结构层15上形成同层设置的像素定义层16和阻挡坝17，所述阻挡坝17围设在所述通孔21的外周侧。
请参照图4，所述阻挡坝17包括第一阻挡坝171和第二阻挡坝172。所述第二阻挡坝172靠近所述通孔21。所述第一阻挡坝171设置在所述第二阻挡坝172远离所述通孔21的一侧，用于隔断有机发光结构层18。
在所述第一阻挡坝171的竖直截面中，所述第一阻挡坝171的宽度自靠近所述基板11的一端向远离所述基板11的一端递增。可选的，第一阻挡坝171的竖直截面的形状为倒梯形。
在本第一实施例中，所述第二阻挡坝172的数量为两个，第一阻挡坝171的数量也为两个。当然，本申请的第一阻挡坝171和第二阻挡坝172的数量并不限于此。
两个所述第二阻挡坝172之间的距离大于一个所述第二阻挡坝172的高度，这样的设置，保证后续封装结构层19的无机封装层191在第二阻挡坝172之间形成平铺膜层。
其中，第二阻挡坝172一方面起到防止封装结构层19的有机封装层192溢流的作用；另一方面起到隔开通孔21和发光像素区的作用。发光像素区是具有显示发光的区域。
另外，需要说明的是，在形成像素定义层16和阻挡坝17之前，先形成阳极，阳极电连接薄膜晶体管阵列结构层15。且像素定义层16开设有开口，开口裸露出阳极。
随后转入步骤S5。
步骤S5：在所述像素定义层16上形成一光阻保护层22，所述光阻保护层22覆盖在整个所述基板11上。
请参照图5，光阻保护层22是设置，避免大颗粒异物、尘埃等落在基板上的膜层的表面。随后转入步骤S6。
步骤S6：沿着所述凸起环12的延伸方向切割所述柔性衬底13，并去除所述柔性衬底13设置在所述凸起环12内的部分，使所述通孔21贯穿所述柔性衬底13；
请参照图6，在本第一实施例中，切割设备先沿着第二凸起环122对第二凸起环122以上的膜层进行切割并去除切割的膜层，而后沿着第一凸起环121对第一凸起环121以上的膜层进行切割并去除切割的膜层，使得通孔21贯穿平坦层14和柔性衬底13，并裸露出基板11。
另外，本第一实施例在保护气的条件下，对所述柔性衬底13和平坦层14进行切割，且切割设备的吹扫喷头的周侧设置有废气抽取器，用于抽取切割过程中产生的尘埃和废气，从而减少切割形成的尘埃落在基板11上的膜层表面。
随后转入步骤S7。
步骤S7：去除所述光阻保护层22。采用去膜液去除光阻保护层22。请参照图7。随后转入步骤S8。
步骤S8：在所述像素定义层16上依次形成有机发光结构层18和封装结构层19，其中，所述有机发光结构层18和所述封装结构层19，包覆所述通孔21的周侧壁和所述基板11对应所述通孔21的表面。
请参照图8，有机发光结构层18包括蒸镀形成的空穴注入层、空穴传输层、红光发光层、绿光发光层、蓝光发光层、空穴阻挡层、电子传输层、电子注入层和阴极等。由于有机层发光结构层18为现有技术，此处不再赘述。
其中，有机发光结构层18设置在阳极上，且延伸至通孔21。而在第一阻挡坝171的位置，因为有机发光结构层18的厚度在纳米级别，因此有机发光结构层18被第一阻挡坝171的段差切断。
请参照图9，封装结构层19包括无机封装层191和设置在两个无机封装层191之间的有机封装层192。两个无机封装层191覆盖整个基板11以上的膜层。无机封装层191的厚度通常为1微米-50微米之间，无机封装层191可以正常覆盖第一阻挡坝171、第二阻挡坝172以及通孔周侧的多层膜台阶。
这样的设置，使得有机发光结构层18和封装结构层19包覆通孔21的周侧，避免了水汽沿着开孔断面的膜层之间的间隙侵蚀显示区的金属层和有机发光层。
另外，有机封装层192采用喷墨打印的方法形成在发光像素区。
随后转入步骤S9。
步骤S9：剥离所述基板11，使覆盖在所述基板11的预定开孔区域11a上的膜层脱落。
请参照图10，从本申请实施例的显示面板的反面用激光管扫描基板11，激光热效应使基板11的上表面和柔性衬底13的下表面分离。在剥离过程中，因为预定开孔区域11a上的膜层只有软质的蒸镀的有机膜层、硬质的无机封装层，因此剥离过程中预定开孔区域11a膜层被拉开后脱落，形成具有完备结构的面内开孔柔性有机发光显示面板。
这样便完成了本申请第一实施例的显示面板的制备方法。
在本申请的第二实施例的显示面板的制备方法中，本第二实施例与第一实施例的不同之处在于步骤S2。请参照图11，在本第二实施例中，所述柔性衬底13包括第一衬底131和第二衬底132。
本第二实施例的显示面板的制备方法的步骤S2：所述在所述预定开孔区域11a上设置凸起环12，并在所述基板11上形成覆盖所述凸起环12的柔性衬底13，包括以下步骤：
在所述预定开孔区域11a上设置凸起环12；
在所述基板11上形成覆盖所述凸起环12的第一柔性衬底131；
在所述第一柔性衬底131上形成第二柔性衬底132。
请参照图12，在本申请的第三实施例的显示面板的制备方法包括：
步骤S1：提供一基板11，所述基板11包括一预定开孔区域11a；
步骤S2：在所述预定开孔区域11a上设置凸起环12，并在所述基板11上形成覆盖所述凸起环12的柔性衬底13；
步骤S3：在所述柔性衬底13上形成薄膜晶体管阵列结构层15，其中所述薄膜晶体管阵列结构层15对应于所述预定开孔区域11a的部分形成通孔21；
步骤S4：在所述薄膜晶体管阵列结构层15上形成同层设置的像素定义层16和阻挡坝17，所述阻挡坝17围设在所述通孔21的外周侧；
步骤S5：在所述像素定义层16上形成一光阻保护层22，所述光阻保护层22覆盖在整个所述基板11上；
步骤S6：沿着所述凸起环12的延伸方向切割所述柔性衬底13，并去除所述柔性衬底13设置在所述凸起环12内的部分，使所述通孔21贯穿所述柔性衬底13；
步骤S7：去除所述光阻保护层22；
步骤S8：在所述像素定义层16上依次形成有机发光结构层18和封装结构层19，其中，所述有机发光结构层18和所述封装结构层19，包覆所述通孔21的周侧壁和所述基板11对应所述通孔21的表面；
步骤S9：对所述基板11上的对应于所述预定开孔区域11a的所述无机封装层191进行切割；
步骤S10：剥离所述基板11，使覆盖在所述基板11的预定开孔区域11a上的膜层脱落。
本申请的第三实施例的显示面板的制备方法，相较于第一实施例增加了一个步骤S9。采用激光对基板11的预定开孔区域11a之上的无机封装层191进行切割，使得在剥离的过程中，避免无机封装层191从基板11的区域产生的裂缝延伸到第二阻挡坝172。
本申请的第四实施例的显示面板的制备方法，相较于第一实施例可以省略步骤S5和S7。这样的设置，简化的制备工艺。
请参照图13，本申请还涉及一种显示面板100，所述显示面板100包括柔性衬底11和依次设置在所述柔性衬底11上的平坦层12、薄膜晶体管阵列结构层13、阳极14、像素定义层15、有机发光结构层16和封装结构层17。所述显示面板100包括通孔21。所述通孔21贯穿所述薄膜晶体管阵列结构层13和所述柔性衬底11和平坦层12。
所述有机发光结构层16和所述封装结构层17包覆所述通孔21的周侧壁。
本申请实施例的显示面板100在通孔21的表面包覆封装结构层17，使得封装结构层17包覆通孔21的周侧，避免了水汽沿着通孔断面的膜层之间的间隙侵蚀显示区的金属层和有机发光层。
在本实施例中，所述显示面板100还包括与所述像素定义层15同层设置的阻挡坝。
所述阻挡坝包括第一阻挡坝181和第二阻挡坝182。所述第二阻挡坝182靠近所述通孔21。所述第一阻挡坝181设置在所述第二阻挡坝182远离所述通孔21的一侧，用于隔断有机发光结构层16。
在所述第一阻挡坝181的竖直截面中，所述第一阻挡坝181的宽度自靠近所述柔性衬底11的一端向远离柔性衬底11的一端递增。
在所述第二阻挡坝182的竖直截面中，所述第二阻挡坝182的宽度自靠近所述柔性衬底11的一端向远离所述柔性衬底11的一端递减。
相邻两个所述第二阻挡坝182之间的距离大于所述第二阻挡坝182的高度。
本申请实施例的显示面板的制备方法可以为本申请的显示面板的制备方法的第一实施例至第四实施例中的任一种。具体的请参照上述实施例的内容。
相较于现有技术的显示面板，本申请的显示面板的制备方法及显示面板，一是通过设置凸起环，降低柔性衬底对应于凸起环部分的厚度，达到平缓激光切点，降低切割膜厚度，避免柔性衬底切割边缘卷曲；
二是在进行薄膜晶体管阵列结构层的制程中，在对应于预定开孔区域的部分形成通孔，以减薄预定开孔区域的膜层厚度，减少激光切割产生的粉尘和有害气体；
三是本申请先形成通孔，再在通孔的表面包覆封装结构层，使得封装结构层包覆通孔的周侧，解决了现有的有机发光二极管面板中，水汽容易沿着开孔断面的膜层之间的间隙侵蚀显示区的金属层和有机发光层，使有机发光二极管面板的寿命变短的技术问题。
以上所述，对于本领域的普通技术人员来说，可以根据本申请的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本申请后附的权利要求的保护范围。

Claims (16)

  1. 一种显示面板，所述显示面板包括柔性衬底和依次设置在所述柔性衬底上的薄膜晶体管阵列结构层、有机发光结构层和封装结构层，其中，所述显示面板包括通孔，所述通孔贯穿所述薄膜晶体管阵列结构层和所述柔性衬底；
    所述有机发光结构层和所述封装结构层包覆所述通孔的周侧壁；
    所述显示面板还包括：设置在所述薄膜晶体管阵列结构层上且环绕所述通孔设置的阻挡坝；
    所述阻挡坝包括至少一个第一阻挡坝和至少一个第二阻挡坝；所述第二阻挡坝靠近所述通孔，所述第一阻挡坝设置在所述第二阻挡坝远离所述通孔的一侧，用于隔断有机发光结构层；
    在所述第一阻挡坝的竖直截面中，所述第一阻挡坝的宽度自靠近所述柔性衬底的一端向远离所述柔性衬底的一端递增；
    在所述第二阻挡坝的竖直截面中，所述第二阻挡坝的宽度自靠近所述柔性衬底的一端向远离所述柔性衬底的一端递减。
  2. 根据权利要求1所述的显示面板，其中，相邻两个所述第二阻挡坝之间的距离大于所述第二阻挡坝的高度。
  3. 一种显示面板，所述显示面板包括柔性衬底和依次设置在所述柔性衬底上的薄膜晶体管阵列结构层、有机发光结构层和封装结构层，其中，所述显示面板包括通孔，所述通孔贯穿所述薄膜晶体管阵列结构层和所述柔性衬底；
    所述有机发光结构层和所述封装结构层包覆所述通孔的周侧壁。
  4. 根据权利要求3所述的显示面板，其中，所述显示面板还包括：设置在所述薄膜晶体管阵列结构层上且环绕所述通孔设置的阻挡坝；
    所述阻挡坝包括至少一个第一阻挡坝和至少一个第二阻挡坝；所述第二阻挡坝靠近所述通孔，所述第一阻挡坝设置在所述第二阻挡坝远离所述通孔的一侧，用于隔断有机发光结构层。
  5. 根据权利要求4所述的显示面板，其中，在所述第一阻挡坝的竖直截面中，所述第一阻挡坝的宽度自靠近所述柔性衬底的一端向远离所述柔性衬底的一端递增。
  6. 根据权利要求4所述的显示面板，其中，在所述第二阻挡坝的竖直截面中，所述第二阻挡坝的宽度自靠近所述柔性衬底的一端向远离所述柔性衬底的一端递减。
  7. 根据权利要求4所述的显示面板，其中，相邻两个所述第二阻挡坝之间的距离大于所述第二阻挡坝的高度。
  8. 一种显示面板的制备方法，其中，包括以下步骤：
    提供一基板，所述基板包括至少一个预定开孔区域；
    在所述预定开孔区域上设置至少一层凸起环，并在所述基板上形成覆盖所述凸起环的柔性衬底；
    在所述柔性衬底上形成薄膜晶体管阵列结构层，其中所述薄膜晶体管阵列结构层对应于所述预定开孔区域的部分形成通孔；
    在所述薄膜晶体管阵列结构层上形成同层设置的像素定义层和阻挡坝，所述阻挡坝围设在所述通孔的外周侧；
    沿着所述凸起环的延伸方向切割所述柔性衬底，并去除所述柔性衬底设置在所述凸起环内的部分，使所述通孔贯穿所述柔性衬底；
    在所述像素定义层上依次形成有机发光结构层和封装结构层，其中，所述有机发光结构层和所述封装结构层，包覆所述通孔的周侧壁和所述基板对应所述通孔的表面；
    剥离所述基板，使覆盖在所述基板的预定开孔区域上的膜层脱落。
  9. 根据权利要求8所述的显示面板的制备方法，其中，所述凸起环包括第一凸起环和第二凸起环，所述柔性衬底包括第一衬底和第二衬底；
    所述在所述预定开孔区域上设置凸起环，并在所述基板上形成覆盖所述凸起环的柔性衬底，包括以下步骤：
    在所述预定开孔区域上设置第一凸起环；
    在所述基板上形成覆盖所述第一凸起环的第一柔性衬底；
    在所述第一柔性衬底上设置第二凸起环；
    在所述第一柔性衬底上形成覆盖所述第二凸起环的第二柔性衬底，所述第二凸起环于所述基板的正投影套设在所述第一凸起环于所述基板的正投影的外周侧。
  10. 根据权利要求8所述的显示面板的制备方法，其中，所述阻挡坝包括至少一个第一阻挡坝和至少一个第二阻挡坝；所述第二阻挡坝靠近所述通孔，所述第一阻挡坝设置在所述第二阻挡坝远离所述通孔的一侧，用于隔断有机发光结构层；
    在所述第一阻挡坝的竖直截面中，所述第一阻挡坝的宽度自靠近所述基板的一端向远离所述基板的一端递增；
    在所述第二阻挡坝的竖直截面中，所述第二阻挡坝的宽度自靠近所述基板的一端向远离所述基板的一端递减。
  11. 根据权利要求10所述的显示面板的制备方法，其中，相邻两个所述第二阻挡坝之间的距离大于所述第二阻挡坝的高度。
  12. 根据权利要求8所述的显示面板的制备方法，其中，在所述沿着所述凸起环的延伸方向切割所述柔性衬底，并去除所述柔性衬底设置在所述凸起环内的部分，使所述通孔贯穿所述柔性衬底，包括：
    在保护气的条件下，对所述柔性衬底进行切割，且切割设备的吹扫喷头的周侧设置有废气抽取器，用于抽取切割过程中产生的尘埃和废气。
  13. 根据权利要求8所述的显示面板的制备方法，其中，在所述沿着所述凸起环的延伸方向切割所述柔性衬底，并去除所述柔性衬底设置在所述凸起环内的部分，使所述通孔贯穿所述柔性衬底，之前还包括以下步骤：
    在所述像素定义层上形成一光阻保护层，所述光阻保护层覆盖在整个所述基板上。
  14. 根据权利要求13所述的显示面板的制备方法，其中，在所述在所述像素定义层上形成有机发光结构层，之前包括以下步骤：
    去除所述光阻保护层。
  15. 根据权利要求8所述的显示面板的制备方法，其中，所述封装结构层包括无机封装层和设置在两个无机封装层之间的有机封装层；
    在所述剥离所述基板，之前还包括以下步骤：
    对所述基板上的对应于所述预定开孔区域的所述无机封装层进行切割。
  16. 根据权利要求8所述的显示面板的制备方法，其中，所述凸起环的宽度等于切割激光光斑的宽度。
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