WO2020248643A1 - 一种含镓石榴石结构闪烁晶体的多晶料合成装置及合成方法 - Google Patents

一种含镓石榴石结构闪烁晶体的多晶料合成装置及合成方法 Download PDF

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WO2020248643A1
WO2020248643A1 PCT/CN2020/080619 CN2020080619W WO2020248643A1 WO 2020248643 A1 WO2020248643 A1 WO 2020248643A1 CN 2020080619 W CN2020080619 W CN 2020080619W WO 2020248643 A1 WO2020248643 A1 WO 2020248643A1
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crucible
induction coil
polycrystalline material
gallium
raw materials
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French (fr)
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丁雨憧
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中国电子科技集团公司第二十六研究所
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Priority to US17/613,957 priority Critical patent/US11623872B2/en
Publication of WO2020248643A1 publication Critical patent/WO2020248643A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • C01G15/006—Compounds containing, besides gallium, indium, or thallium, two or more other elements, with the exception of oxygen or hydrogen
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/62—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
    • C09K11/7721—Aluminates
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/30—Three-dimensional structures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/18—Heating by arc discharge
    • H05B7/20—Direct heating by arc discharge, i.e. where at least one end of the arc directly acts on the material to be heated, including additional resistance heating by arc current flowing through the material to be heated

Definitions

  • the invention relates to the improvement of crystal growth technology, in particular to a polycrystalline material synthesis device and a synthesis method of a gallium-containing garnet structure scintillation crystal, belonging to the technical field of crystal growth.
  • the obtained oxides or carbonates of other doping elements for example, when the C element in the chemical formula is Ca, the raw material can be CaO or CaCO 3 ).
  • gallium-containing garnet structure scintillation crystals under low O 2 partial pressure or no O 2 atmosphere will always cause a large loss of Ga element, and the decomposition rate of Ga 2 O 3 is difficult to accurately control, and the accurate composition cannot be calculated. Compensation ratio, which will seriously affect the uniformity of crystal performance, especially when the composition deviates from the same composition point greatly, it will not be possible to grow high-quality gallium-containing garnet structure scintillation crystals.
  • pre-synthesized polycrystalline raw materials are used to replace Gd 2 O 3 , Ga 2 O 3 , Al 2 O 3 , CeO 2 and the chemical formula
  • the mixture of oxide or carbonate powder materials of other doping elements involved is an effective method.
  • the method for synthesizing a gallium-containing garnet structure scintillation crystal polycrystalline material described in patent US20170153335A1 is: firstly, a strong acid is used to decompose oxide materials such as Gd 2 O 3 , Ga 2 O 3 , Al 2 O 3 , CeO 2 to form intermediates, Relying on chemical reaction to generate garnet phase complex, and finally requiring separation and sintering to prepare the gallium-containing garnet structure scintillation crystal polycrystalline material.
  • This method has many shortcomings, such as multiple procedures, complicated process, strong acid requirement, high cost and low efficiency.
  • the purpose of the present invention is to provide a polycrystalline material synthesis device and method for gallium-containing garnet structure scintillation crystals.
  • the present invention can realize rapid speed of gallium-containing garnet structure scintillation crystal polycrystalline materials , Efficient and impurity-free synthesis, which can effectively inhibit the volatilization of Ga 2 O 3 components and ensure the stability of Ga content in the gallium-containing garnet structure scintillation crystal polycrystalline material.
  • a polycrystalline material synthesizing device for scintillating crystals with a gallium-containing garnet structure comprising a polycrystalline material synthesis chamber made of thermal insulation material, and an openable cover plate is arranged above the polycrystalline material synthesis chamber for raw material fetching Place; in the center of the bottom of the polycrystalline material synthesis chamber is provided with a crucible, the induction coil is arranged outside the polycrystalline material synthesis chamber and corresponds to the position of the crucible height, characterized in that: the polycrystalline material synthesis chamber is located in the induction coil An arc heating device is provided on the axis, and the arc heating device is connected to the power supply to use the high temperature generated by the arc discharge to heat and melt the raw material in the center of the crucible; the induction coil is connected to the induction power supply to use the arc heating device to melt under the action of alternating current The increased conductivity of the melt heats the raw materials in the crucible from the center to the periphery.
  • the cross section of the induction coil is hollow, and a cooling water pipe is arranged at the bottom of the crucible, and cooling water is passed through the cooling water pipe and the induction coil to cool the bottom and surroundings of the crucible to prevent the crucible from being melted.
  • the thermal insulation material is ZrO 2 ceramics or Al 2 O 3 ceramics, or the two materials are shared.
  • the crucible material is quartz or corundum ceramic, and is fixed in the polycrystalline material synthesis chamber.
  • the anode of the arc heating device is located directly above/below the crucible, the cathode of the arc heating device is located directly below/above the crucible, and the anode of the arc heating device and the cathode of the arc heating device are arranged oppositely.
  • a method for synthesizing polycrystalline materials of scintillation crystals with gallium-containing garnet structure The prepared synthetic raw materials are mixed uniformly and put into the crucible, and then the arc heating device is activated to heat the raw materials in the center of the crucible using the high temperature generated by the arc discharge , And make the raw materials in the center position melt first, the conductivity of the materials in the center position will increase after melting; then start the power supply connected to the induction coil to generate an alternating induction electromagnetic field, so that the raw materials in the crucible will continue to heat up by the eddy current under the action of the alternating electromagnetic field , And gradually melt from the center to the surroundings until it reaches the required melting boundary, and then keep it for a certain period of time to ensure that the raw materials fully react and form a garnet phase, and finally drop to room temperature.
  • the crucible is the synthesized polycrystalline material; the raw material is in the center position After the melting amount meets the requirements of the induction coil for the heating conductivity of the material,
  • This synthesis method uses the aforementioned polycrystalline material synthesis device of gallium-containing garnet structure scintillation crystal, and the specific operation steps are as follows:
  • step 2) Place the mixed raw materials of step 1) in a crucible;
  • the temperature is reduced to room temperature at a certain rate, and the crucible is the synthesized polycrystalline material.
  • Step 6 The required melting boundary is determined according to the following requirements.
  • the heating power of the induction coil is controlled to prevent the crucible from directly contacting the melt, to ensure that a layer of powder material is left between the crucible and the melt to isolate the crucible from the melt, and to generate polycrystalline The material is not contaminated by the crucible.
  • step 1) to step 7) is operated in an air atmosphere, or a mixed gas atmosphere composed of O 2 and any one, two or three of N 2 , Ar or CO 2 , where O 2 The content is higher than 3.0vol.%, thereby suppressing the decomposition of Ga 2 O 3 .
  • the time required for the induction coil power in step 7) to decrease from the maximum value to zero is 0.1 hours to 200 hours.
  • the present invention has the following beneficial effects:
  • This synthesis device can heat the oxide or carbonate raw materials required for polycrystalline materials to above the eutectic temperature to make them fully react to generate garnet phase polycrystalline materials.
  • This synthesis process because the synthesis process is carried out in an oxygen-rich atmosphere, can effectively inhibit the volatilization of Ga 2 O 3 components, thereby obtaining a gallium-containing garnet structure scintillation crystal polycrystalline material with stable components.
  • This synthesis process relies on the raw materials to heat up and melts from the center to the outside. During the melting process, a layer of powdered raw materials is left between the crucible and the melt to isolate the crucible from the melt, so that the polycrystalline material produced is not contaminated by the crucible. No impurities are introduced in the whole synthesis process.
  • This device uses low-cost corundum ceramic or quartz as the crucible material, which avoids the expensive iridium crucible and does not worry about the oxidation of the crucible. It can be carried out in an oxygen-rich atmosphere.
  • the gallium-containing garnet structure scintillation crystal polycrystalline material synthesized in the present invention can be used as a raw material for the growth of gallium-containing garnet structure scintillation single crystal by pulling method, so as to avoid the decomposition of Ga 2 O 3 and weaken the decrease of Ga component and iridium. Oxidation loss of gold facilitates the growth of scintillation crystals with uniform composition of gallium-containing garnet structure.
  • 1- insulation material 2- induction coil; 3- crucible; 4- arc heating device anode; 5- arc heating device cathode; 6- cooling water pipe; 7- polycrystalline material synthesis chamber.
  • the polycrystalline material synthesis device of the gallium-containing garnet structure scintillation crystal of the present invention includes a polycrystalline material synthesis chamber 7 composed of a thermal insulation material 1, and the polycrystalline material synthesis chamber 7 is above
  • An openable and closeable cover plate is provided for the taking and placing of raw materials;
  • the thermal insulation material 1 is ZrO 2 ceramics or Al 2 O 3 ceramics, or the two materials are shared.
  • a crucible 3 is provided at the center of the bottom of the polycrystalline material synthesis chamber 7.
  • the crucible 3 is made of quartz or corundum (Al 2 O 3 ) ceramics and is fixed in the polycrystalline material synthesis chamber 7.
  • the (intermediate frequency) induction coil 2 is looped around the polycrystalline material synthesis chamber 7 at a position corresponding to the height of the crucible 3.
  • An arc heating device is provided on the central axis of the induction coil 2 in the polycrystalline material synthesis chamber 7, and the arc heating device is connected to the power source to use the high temperature generated by the arc discharge to heat and melt the raw material in the center of the crucible;
  • the positive electrode 4 is located directly above the crucible 3, the negative electrode 5 of the arc heating device is located directly below the crucible 3, and the positive electrode 4 of the arc heating device and the negative electrode 5 of the arc heating device are arranged oppositely.
  • the induction coil 2 is connected to an induction power supply (intermediate frequency, intermediate frequency, high frequency can be used) to heat the raw materials in the crucible from the center to the periphery with the increased conductivity of the melt melted by the arc heating device under the action of alternating current.
  • an induction power supply intermediate frequency, intermediate frequency, high frequency can be used
  • the induction coil 2 is hollow in cross section.
  • a cooling water pipe 6 is provided at the bottom of the crucible 3.
  • the cooling water pipe 6 and the induction coil 2 pass cooling water to cool the bottom and surroundings of the crucible to prevent the crucible from being melted, thereby preventing the melting of the crucible from Material contact and contaminate material.
  • the induction coil of the present invention is a pipe structure with a central hole, and circulating cooling water passes through the central hole, and the cooling water is deionized water. Deionized water has high resistance, so it can be considered as an insulating material. Cooling water is passed through the induction coil of the present invention to prevent the induction coil and the crucible from melting.
  • the present invention also provides a method for synthesizing polycrystalline materials of scintillation crystals with gallium-containing garnet structure.
  • the pre-prepared synthetic raw materials are mixed uniformly and put into the crucible, and then the arc heating device is started, and the high temperature generated by the arc discharge is used to The raw materials in the center are heated, and the raw materials in the center are first melted.
  • the power supply connected to the induction coil is turned on to generate an alternating induction electromagnetic field, which makes the raw materials in the crucible act on the alternating electromagnetic field Relying on the eddy current to continue to generate heat, and gradually melt from the center to the surroundings, until it reaches the required melting boundary, and then keep it for a certain period of time to ensure that the raw materials fully react and form a garnet phase, and finally drop to room temperature.
  • the crucible is the synthesized polycrystalline material ; After the melting of the raw material at the center position meets the requirements of the induction coil for the heating conductivity of the material, turn off the power of the arc heating device.
  • the synthesis method adopts the polycrystalline material synthesis device of the scintillation crystal containing gallium garnet structure, and the specific steps are as follows:
  • the purity of all powder raw materials is ⁇ 99.99% ;
  • the chemical formula of the gallium-containing garnet structure scintillation crystal polycrystalline material to be synthesized is (Gd 1-xij A x B i C j ) 3 (Ga y Al 1-y ) 5 O 12 , where A is Y, Lu, La B is one of Ce and Pr; C is one of Mg, Ca, Sr, Ba and Zn, where 0 ⁇ x ⁇ 1, 0.00001 ⁇ i ⁇ 0.05, 0.00001 ⁇ j ⁇ 0.05, 0.4 ⁇ y ⁇ 1, x+i+j ⁇ 1;
  • step 2) Place the mixed raw materials of step 1) in a crucible;
  • Start the arc heating device rely on the high temperature generated by the arc discharge to heat the raw materials in the center of the crucible, and melt the raw materials in the center first, and the conductivity of the raw materials in the center will increase after melting, meeting the requirements of the induction coil for heating conductivity of the materials;
  • the starting sequence of the induction coil power supply and the arc heating device power supply does not matter.
  • the arc melts the raw material in the center and then the induction coil is turned on.
  • the induction coil is turned on in advance and then the arc heating device is turned on, or both at the same time.
  • the temperature is reduced to room temperature at a certain rate, and the crucible is the synthesized polycrystalline material.
  • the melting boundary required in step 6) is determined according to the following requirements.
  • the heating power of the induction coil is controlled to prevent direct contact between the crucible and the melt, and to ensure that a layer of powder raw material is left between the crucible and the melt to isolate the crucible from the melt, so as to generate The polycrystalline material is not contaminated by the crucible.
  • step 1) to step 7) is operated in an air atmosphere, or a mixed gas atmosphere composed of O 2 and any one, two or three of N 2 , Ar or CO 2 , where O 2 The content is higher than 3.0vol.%, thereby suppressing the decomposition of Ga 2 O 3 .
  • the time required for the power of the induction coil in step 7) to decrease from the maximum value to zero is 0.1 hours to 200 hours, preferably 20 hours to 50 hours.
  • the corundum crucible with a size of ⁇ 200mm ⁇ 150mm is used, the inner diameter of the copper induction coil is 250mm, the insulation material is ZrO 2 ceramic, the thickness of the insulation material is 30mm, and the bottom of the crucible is a copper cooling water pipe.
  • the corundum crucible with a size of ⁇ 200mm ⁇ 150mm is used, the inner diameter of the copper induction coil is 250mm, the insulation material is ZrO 2 ceramic, the thickness of the insulation material is 30mm, and the bottom of the crucible is a copper cooling water pipe.
  • a quartz crucible with a size of ⁇ 200mm ⁇ 150mm, a copper induction coil with an inner diameter of 250mm, an Al 2 O 3 ceramic insulation material, a thickness of 30 mm, and a copper cooling water pipe at the bottom of the crucible are used.
  • the corundum crucible with the size of ⁇ 200mm ⁇ 150mm is used, the inner diameter of the copper induction coil is 250mm, the insulation material is Al 2 O 3 ceramics, the thickness of the insulation material is 30 mm, and the bottom of the crucible is a copper cooling water pipe.
  • a quartz crucible with a size of ⁇ 200mm ⁇ 150mm, a copper induction coil with an inner diameter of 250mm, a ZrO 2 ceramic insulation material, and a thickness of 30mm.
  • the bottom of the crucible is a copper cooling water pipe.

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Abstract

提供一种含镓石榴石结构闪烁晶体的多晶料合成装置及合成方法。合成装置包括由保温材料（1）构成的多晶料合成腔室（7），在多晶料合成腔室内底部中心设有坩埚（3），感应线圈（2）环设于多晶料合成腔室外部并与坩埚高度对应的位置；在多晶料合成腔室内位于感应线圈中轴线上设有电弧加热装置（4），以利用电弧放电产生的高温对坩埚中心的原料进行加热并使之熔化；感应线圈接中频感应电源以在交变电流作用下利用电弧加热装置熔化的熔体增加的电导率从中心向周围加热坩埚中的原料。利用该装置可以实现含镓石榴石结构闪烁晶体多晶料的快速、高效、无杂质合成，可以有效抑制Ga 2O 3组分的挥发，保证含镓石榴石结构闪烁晶体多晶料中Ga含量的稳定。

Description

一种含镓石榴石结构闪烁晶体的多晶料合成装置及合成方法 技术领域
本发明涉及晶体生长技术的改进，具体涉及一种含镓石榴石结构闪烁晶体的多晶料合成装置及合成方法，属于晶体生长技术领域。
背景技术
含镓石榴石结构闪烁晶体((Gd 1-x-i-jA xB iC j) 3(Ga yAl 1-y) 5O 12，A＝Y，Lu；B＝Ce、Pr；C＝Mg、Ca、Sr、Ba、Zn)是一种综合性能优良的无机闪烁晶体材料，它具有密度大、衰减时间快、光产额高、物化性能稳定等优点，在PET、TOF-PET和X射线CT中有重要的应用前景。含镓石榴石结构闪烁晶体通常采用提拉法(Czochralski法)技术制备获得，其原料为纯度99.99％以上的Gd 2O 3、Ga 2O 3、Al 2O 3、CeO 2以及化学式中((Gd 1-x-i-jA xB iC j) 3(Ga yAl 1-y) 5O 12，A＝Y，Lu；B＝Ce、Pr；C＝Mg、Ca、Sr、Ba、Zn)所涉及到的其他掺杂元素的氧化物或碳酸盐(例如：当化学式中的C元素为Ca时，原料可以是CaO或CaCO 3)。制备单晶前先将这些原料按照化学计量比(或Ga 2O 3过量)称量并均匀混合，再将之置于铱金坩埚中采用中频感应的方式升温、熔化，最后采用特定方向的籽晶从熔体中拉制出含镓石榴石结构闪烁晶锭[J.Czochralski,J.Phys.Chem.91,219(1918)]。采用此方法已经成功制备出了直径2英寸和3英寸的含镓石榴石结构闪烁晶体。
采用以上方法制备含镓石榴石结构闪烁晶体存在一个重要缺点，即：当温度超过1300℃时原料中的Ga 2O 3组分会产生分解性挥发
Figure PCTCN2020080619-appb-000001
从而导致组分偏离，且分解产物中的O 2也会氧化铱金坩埚。从以上化学反应方程式可以看到Ga 2O 3的分解反应是一个可逆反应，若增加体系中的O 2分压则可使分解反应逆向进行，从而抑制Ga 2O 3的挥发。而过高的O 2分压又会加重铱金坩埚的氧化，使生产成本急剧增加(因铱金非常昂贵)，因此无法采用较高O 2分压的办法来抑制Ga 2O 3的分解。目前通常采用惰性气氛或低O 2分压(0～3.0vol.％)生长含镓石榴石结构闪烁晶体，且在配料时加入过量的Ga 2O 3(过量0～3.0wt.％)进行组分补偿，从而实现组分挥发与铱金氧化间的平衡[Kei Kamada,Yasuhiro Shoji,et al.IEEE Transactions on Nuclear Science,63,2(2016)]。但在低O 2分压或无O 2气氛下生长含镓石榴石结构闪烁晶体总会引起Ga元素的较大损失，且Ga 2O 3的分解速率难于精确控制，无法计算出准确的组分补偿比例，这将严重影响晶体性能的均匀性，特别是当组分偏离同成分点较大时将无法生长出高光学品质的含镓石榴石结构闪烁晶体。
为了减少提拉法生长含镓石榴石结构闪烁晶体过程中Ga元素的挥发损失，采用预先合成好的多晶原料替代Gd 2O 3、Ga 2O 3、Al 2O 3、CeO 2以及化学式中所涉及到的其他掺杂元 素的氧化物或碳酸盐粉末原料的混合物是一种有效的办法。如专利US20170153335A1所述，由于Ga离子与含镓石榴石结构闪烁晶体熔化后的熔体中任何一种元素的结合能都高于Ga离子在Ga 2O 3分子中的结合能，因此采用多晶料生长含镓石榴石结构闪烁晶体将大大降低因Ga 2O 3分解引起的Ga含量减少。而专利US20170153335A1所述的合成含镓石榴石结构闪烁晶体多晶料的方法为：首先采用强酸分解Gd 2O 3、Ga 2O 3、Al 2O 3、CeO 2等氧化物原料生成中间体，再依靠化学反应生成石榴石相复合体，最后还需分离、烧结等工艺才能制备出含镓石榴石结构闪烁晶体多晶料。该方法存在工序多、工艺复杂、需要强酸、成本高、效率低等缺点。
发明内容
针对现有技术存在的上述不足，本发明的目的在于提供一种含镓石榴石结构闪烁晶体的多晶料合成装置及合成方法，本发明可以实现含镓石榴石结构闪烁晶体多晶料的快速、高效、无杂质合成，可以有效抑制Ga 2O 3组分的挥发，保证含镓石榴石结构闪烁晶体多晶料中Ga含量的稳定。
为了实现上述目的，本发明采用的技术方案如下：
一种含镓石榴石结构闪烁晶体的多晶料合成装置，包括由保温材料构成的多晶料合成腔室，多晶料合成腔室上方设有可开合的盖板以用于原料的取放；在多晶料合成腔室内底部中心设有坩埚，感应线圈环设于多晶料合成腔室外部并与坩埚高度对应的位置，其特征在于：在多晶料合成腔室内位于感应线圈中轴线上设有电弧加热装置，电弧加热装置与电源连接以利用电弧放电产生的高温对坩埚中心的原料进行加热并使之熔化；感应线圈接感应电源以在交变电流作用下利用电弧加热装置熔化的熔体增加的电导率从中心向周围加热坩埚中的原料。
所述感应线圈横截面为中空，在坩埚底部设有冷却水管，冷却水管和感应线圈通冷却水，用于冷却坩埚底部和周围以防止坩埚被熔化。
所述保温材料为ZrO 2陶瓷或Al 2O 3陶瓷，或两种材料共用。
所述坩埚材料为石英或刚玉陶瓷，并固定在多晶料合成腔室内。
电弧加热装置的正极位于坩埚正上方/正下方，电弧加热装置的负极位于坩埚正下方/正上方，电弧加热装置的正极和电弧加热装置的负极相对设置。
一种含镓石榴石结构闪烁晶体的多晶料合成方法，将预先准备好的合成原料混合均匀后放入坩埚中，然后启动电弧加热装置，利用电弧放电产生的高温对坩埚中心的原料进行加热，并使中心位置的原料首先熔化，中心位置原料熔化后电导率增加；然后启动与感应 线圈连接的电源，产生交变的感应电磁场，使得坩埚内的原料在交变电磁场作用下依靠涡流持续发热，并由中心向周围逐渐熔化，直到达到需要的熔化边界，然后保温一定时间，保证原料充分反应并生成石榴石相，最后降至室温，坩埚内即为合成的多晶料；在中心位置原料熔化量满足感应线圈对物料加热电导率的要求后，关闭电弧加热装置的电源。
本合成方法采用前述的含镓石榴石结构闪烁晶体的多晶料合成装置，具体操作步骤如下，
1)根据待合成含镓石榴石结构闪烁晶体多晶料的化学分子式所规定的化学计量比称取各粉末原料，将称好的粉末原料均匀混合得混合原料，所有粉末原料的纯度≥99.99％；
2)将步骤1)的混合原料放置在坩埚中；
3)启动与感应线圈连接的电源，产生交变的感应电磁场；
4)启动电弧加热装置，依靠电弧放电产生的高温对坩埚中心的原料进行加热，并使中心位置的原料首先熔化，中心位置原料熔化后电导率增加，满足感应线圈对物料加热电导率的要求；
5)逐步增加感应线圈的输出功率，使得坩埚内的原料能在交变电磁场作用下依靠涡流持续发热；在中心位置原料熔化量满足感应线圈对原料加热电导率的要求后，关闭电弧加热装置的电源；
6)进一步增加感应线圈的输出功率，使原料从中心逐步向外熔化，直到达到需要的熔化边界，再恒温0.5～4小时，以保证原料充分反应并生成石榴石相；
7)恒温时间结束，按照一定速率降温到室温，坩埚内即为合成的多晶料。
步骤6)需要的熔化边界按如下要求确定，控制感应线圈的加热功率以防止坩埚与熔体直接接触，保证坩埚与熔体间留有一层粉末原料将坩埚与熔体隔离，使生成的多晶料不被坩埚污染。
上述步骤1)～步骤7)操作的气氛为空气气氛，或由O 2与N 2、Ar或CO 2中的任意一种、两种或三种气体混合构成的混合气体气氛，其中O 2的含量高于3.0vol.％，从而抑制Ga 2O 3分解。
步骤7)中的感应线圈功率从最大值降低到零所需的时间为0.1小时～200小时。
与现有技术相比，本发明具有以下有益效果：
1、本合成装置可以将多晶料所需的氧化物或碳酸盐原料加热到共熔点温度以上，使之充分反应，生成石榴石相多晶料。
2、本合成工艺，因合成过程是在富氧气氛下进行的，可以有效抑制Ga 2O 3组分的挥发， 从而得到组分稳定的含镓石榴石结构闪烁晶体多晶料。
3、本合成工艺由于是靠原料自身发热而由中心向外熔化，且熔化过程中坩埚与熔体间留有一层粉末原料将坩埚与熔体隔离，使生成的多晶料不被坩埚污染，整个合成过程无杂质引入。
4、本装置选用低成本的刚玉陶瓷或者石英作为坩埚材料，避免了昂贵的铱金坩埚，且不担心坩埚氧化问题，可以在富氧气氛下进行。
5、本发明所合成的含镓石榴石结构闪烁晶体多晶料可以作为提拉法生长含镓石榴石结构闪烁单晶的原料，从而避免Ga 2O 3的分解，减弱Ga组分减少和铱金氧化损耗，有利于生长获得组分均匀的含镓石榴石结构闪烁晶体。
附图说明
图1-本发明含镓石榴石结构闪烁晶体多晶料的合成装置示意图。
其中，1-保温材料；2-感应线圈；3-坩埚；4-电弧加热装置正极；5-电弧加热装置负极；6-冷却水管；7-多晶料合成腔室。
具体实施方式
下面结合附图和具体实施例，对本发明作进一步详细描述。
参见图1，从图上可以看出，本发明含镓石榴石结构闪烁晶体的多晶料合成装置，包括由保温材料1构成的多晶料合成腔室7，多晶料合成腔室7上方设有可开合的盖板以用于原料的取放；所述保温材料1为ZrO 2陶瓷或Al 2O 3陶瓷，或两种材料共用。在多晶料合成腔室7内底部中心设有坩埚3，所述坩埚3材料为石英或刚玉(Al 2O 3)陶瓷，并固定在多晶料合成腔室7内。(中频)感应线圈2环设于多晶料合成腔室7外部并与坩埚3高度对应的位置。在多晶料合成腔室7内位于感应线圈2中轴线上设有电弧加热装置，电弧加热装置与电源连接以利用电弧放电产生的高温对坩埚中心的原料进行加热并使之熔化；电弧加热装置正极4位于坩埚3正上方，电弧加热装置负极5位于坩埚3正下方，电弧加热装置正极4和电弧加热装置负极5相对设置。感应线圈2接感应电源(中频、中频、高频都可以)以在交变电流作用下利用电弧加热装置熔化的熔体增加的电导率从中心向周围加热坩埚中的原料。
所述感应线圈2横截面为中空，在坩埚3底部设有冷却水管6，冷却水管6和感应线圈2通冷却水，用于冷却坩埚底部和周围以防止坩埚被熔化，从而防止熔化的坩埚与物料接触而污染物料。本发明感应线圈为具有中心孔的管材结构，在中心孔内通有循环流动的冷却水，所述冷却水为去离子水。去离子水电阻很大，故可以认为是绝缘材料。本发明感 应线圈通冷却水，目的是防止感应线圈和坩埚熔化。
本发明同时提供了一种含镓石榴石结构闪烁晶体的多晶料合成方法，将预先准备好的合成原料混合均匀后放入坩埚中，然后启动电弧加热装置，利用电弧放电产生的高温对坩埚中心的原料进行加热，并使中心位置的原料首先熔化，中心位置原料熔化后电导率增加；然后启动与感应线圈连接的电源，产生交变的感应电磁场，使得坩埚内的原料在交变电磁场作用下依靠涡流持续发热，并由中心向周围逐渐熔化，直到达到需要的熔化边界，然后保温一定时间，保证原料充分反应并生成石榴石相，最后降至室温，坩埚内即为合成的多晶料；在中心位置原料熔化量满足感应线圈对物料加热电导率的要求后，关闭电弧加热装置的电源。
本合成方法采用上述含镓石榴石结构闪烁晶体的多晶料合成装置，具体步骤如下，
1)根据待合成含镓石榴石结构闪烁晶体多晶料的化学分子式所规定的化学计量比称取各粉末原料，将称好的粉末原料均匀混合得混合原料，所有粉末原料的纯度≥99.99％；待合成含镓石榴石结构闪烁晶体多晶料的化学分子式为(Gd 1-x-i-jA xB iC j) 3(Ga yAl 1-y) 5O 12，其中A为Y、Lu、La中的一种；B为Ce、Pr中的一种；C为Mg、Ca、Sr、Ba、Zn中的一种，其中0≤x≤1，0.00001＜i＜0.05，0.00001＜j＜0.05，0.4≤y≤1，x+i+j≤1；
2)将步骤1)的混合原料放置在坩埚中；
3)启动与感应线圈连接的电源，产生交变的感应电磁场；
4)启动电弧加热装置，依靠电弧放电产生的高温对坩埚中心的原料进行加热，并使中心位置的原料首先熔化，中心位置原料熔化后电导率增加，满足感应线圈对物料加热电导率的要求；感应线圈电源和电弧加热装置电源的启动顺序无所谓，电弧把中心处的原料熔化后再开感应线圈也行，感应线圈预先开启再开启电弧加热装置，或者同时开启都可以。
5)逐步增加感应线圈的输出功率，使得坩埚内的原料能在交变电磁场作用下依靠涡流持续发热；在中心位置原料熔化量满足感应线圈对原料加热电导率的要求后，关闭电弧加热装置的电源；
6)进一步增加感应线圈的输出功率，使原料从中心逐步向外熔化，直到达到需要的熔化边界，再恒温0.5～4小时，以保证原料充分反应并生成石榴石相；
7)恒温时间结束，按照一定速率降温到室温，坩埚内即为合成的多晶料。
优选地，步骤6)需要的熔化边界按如下要求确定，控制感应线圈的加热功率以防止坩埚与熔体直接接触，保证坩埚与熔体间留有一层粉末原料将坩埚与熔体隔离，使生成的多晶料不被坩埚污染。
上述步骤1)～步骤7)操作的气氛为空气气氛，或由O 2与N 2、Ar或CO 2中的任意一种、两种或三种气体混合构成的混合气体气氛，其中O 2的含量高于3.0vol.％，从而抑制Ga 2O 3分解。
步骤7)中的感应线圈功率从最大值降低到零所需的时间为0.1小时～200小时，最好为20小时～50小时。
以下再给出几个合成实施例以进一步帮助理解本发明。
实施例1
采用尺寸为Φ200mm×150mm的刚玉坩埚，铜质感应线圈内径250mm，保温材料为ZrO 2陶瓷，保温材料厚度30mm，坩埚底部为铜质冷却水管。分别称取5822.11g的Gd 2O 3、1100.54g的Al 2O 3，3034.83g的Ga 2O 3、40.59g的CeO 2粉末原料，然后将之混合均匀。把混合好的粉末原料放入刚玉坩埚中并压实。依次启动感应线圈电源和电弧加热电源。待原料中心开始熔化后关闭电弧加热装置，同时按3kW/h的速率增加感应线圈的加热功率，使原料从中心逐步向外熔化，直至熔区接近坩埚壁。因坩埚侧壁和底部均通有冷却水，可以保证坩埚不被熔化。恒温(恒功率)3小时后，用40小时将感应线圈的峰值功率降到零。整个过程均在空气气氛下进行。敲开坩埚后获得了黄色的多晶料，经XRD物相测试表明所得的多晶料为石榴石相，且无其他杂相。
实施例2
采用尺寸为Φ200mm×150mm的刚玉坩埚，铜质感应线圈内径250mm，保温材料为ZrO 2陶瓷，保温材料厚度30mm，坩埚底部为铜质冷却水管。分别称取5892.58g的Gd 2O 3、1288.51g的Al 2O 3，2770.12g的Ga 2O 3、50.52g的CeO 2粉末原料，然后将之混合均匀。把混合好的粉末原料放入刚玉坩埚中并压实。依次启动感应线圈电源和电弧加热电源。待原料中心开始熔化后关闭电弧加热装置，同时按3kW/h的速率增加感应线圈的加热功率，使原料从中心逐步向外熔化，直至熔区接近坩埚壁。因坩埚侧壁和底部均通有冷却水，可以保证坩埚不被熔化。恒温(恒功率)2小时后，用30小时将感应线圈的峰值功率降到零。整个过程均在空气气氛下进行。敲开坩埚后获得了黄色的多晶料，经XRD物相测试表明所得的多晶料为石榴石相，且无其他杂相。
实施例3
采用尺寸为Φ200mm×150mm的石英坩埚，铜质感应线圈内径250mm，保温材料为Al 2O 3陶瓷，保温材料厚度30mm，坩埚底部为铜质冷却水管。分别称取5892.58g的Gd 2O 3、1288.51g的Al 2O 3，2770.12g的Ga 2O 3、50.52g的CeO 2、5g的MgCO 3粉末原料，然后将 之混合均匀。把混合好的粉末原料放入刚玉坩埚中并压实。依次启动感应线圈电源和电弧加热电源。待原料中心开始熔化后关闭电弧加热装置，同时按3kW/h的速率增加感应线圈的加热功率，使原料从中心逐步向外熔化，直至熔区接近坩埚壁。因坩埚侧壁和底部均通有冷却水，可以保证坩埚不被熔化。恒温(恒功率)3.5小时后，用45小时将感应线圈的峰值功率降到零。整个过程均在空气气氛下进行。敲开坩埚后获得了黄色的多晶料，经XRD物相测试表明所得的多晶料为石榴石相，且无其他杂相。
实施例4
采用尺寸为Φ200mm×150mm的刚玉坩埚，铜质感应线圈内径250mm，保温材料为Al 2O 3陶瓷，保温材料厚度30mm，坩埚底部为铜质冷却水管。分别称取5892.58g的Gd 2O 3、1288.51g的Al 2O 3，2770.12g的Ga 2O 3、50.52g的CeO 2、7g的CaCO 3粉末原料，然后将之混合均匀。把混合好的粉末原料放入刚玉坩埚中并压实。依次启动感应线圈电源和电弧加热电源。待原料中心开始熔化后关闭电弧加热装置，同时按3kW/h的速率增加感应线圈的加热功率，使原料从中心逐步向外熔化，直至熔区接近坩埚壁。因坩埚侧壁和底部均通有冷却水，可以保证坩埚不被熔化。恒温(恒功率)2小时后，用50小时将感应线圈的峰值功率降到零。整个过程均在空气气氛下进行。敲开坩埚后获得了黄色的多晶料，经XRD物相测试表明所得的多晶料为石榴石相，且无其他杂相。
实施例5
采用尺寸为Φ200mm×150mm的石英坩埚，铜质感应线圈内径250mm，保温材料为ZrO 2陶瓷，保温材料厚度30mm，坩埚底部为铜质冷却水管。分别称取5892.58g的Gd 2O 3、1288.51g的Al 2O 3，2770.12g的Ga 2O 3、50.52g的CeO 2、8g的BaCO 3粉末原料，然后将之混合均匀。把混合好的粉末原料放入刚玉坩埚中并压实。依次启动感应线圈电源和电弧加热电源。待原料中心开始熔化后关闭电弧加热装置，同时按3kW/h的速率增加感应线圈的加热功率，使原料从中心逐步向外熔化，直至熔区接近坩埚壁。因坩埚侧壁和底部均通有冷却水，可以保证坩埚不被熔化。恒温(恒功率)1.5小时后，用25小时将感应线圈的峰值功率降到零。整个过程均在空气气氛下进行。敲开坩埚后获得了黄色的多晶料，经XRD物相测试表明所得的多晶料为石榴石相，且无其他杂相。
本发明的上述实施例仅仅是为说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其他不同形式的变化和变动。这里无法对所有的实施方式予以穷举。凡是属于本发明的技术方案所引申出的显而易见的变化或变动仍处于本发明的保护范围之列。

Claims (10)

  1. 一种含镓石榴石结构闪烁晶体的多晶料合成装置，包括由保温材料构成的多晶料合成腔室，多晶料合成腔室上方设有可开合的盖板以用于原料的取放；在多晶料合成腔室内底部中心设有坩埚，感应线圈环设于多晶料合成腔室外部并与坩埚高度对应的位置，其特征在于：在多晶料合成腔室内位于感应线圈中轴线上设有电弧加热装置，电弧加热装置与电源连接以利用电弧放电产生的高温对坩埚中心的原料进行加热并使之熔化；感应线圈接感应电源以在交变电流作用下利用电弧加热装置熔化的熔体增加的电导率从中心向周围加热坩埚中的原料。
  2. 根据权利要求1所述的一种含镓石榴石结构闪烁晶体的多晶料合成装置，其特征在于：所述感应线圈横截面为中空，在坩埚底部设有冷却水管，冷却水管和感应线圈通冷却水，用于冷却坩埚底部和周围以防止坩埚被熔化。
  3. 根据权利要求1所述的一种含镓石榴石结构闪烁晶体的多晶料合成装置，其特征在于：所述保温材料为ZrO 2陶瓷或Al 2O 3陶瓷，或两种材料共用。
  4. 根据权利要求1所述的一种含镓石榴石结构闪烁晶体的多晶料合成装置，其特征在于：所述坩埚材料为石英或刚玉陶瓷，并固定在多晶料合成腔室内。
  5. 根据权利要求1所述的一种含镓石榴石结构闪烁晶体的多晶料合成装置，其特征在于：电弧加热装置的正极位于坩埚正上方/正下方，电弧加热装置的负极位于坩埚正下方/正上方，电弧加热装置的正极和电弧加热装置的负极相对设置。
  6. 一种含镓石榴石结构闪烁晶体的多晶料合成方法，其特征在于：将预先准备好的合成原料混合均匀后放入坩埚中，然后启动电弧加热装置，利用电弧放电产生的高温对坩埚中心的原料进行加热，并使中心位置的原料首先熔化，中心位置原料熔化后电导率增加；然后启动与感应线圈连接的电源，产生交变的感应电磁场，使得坩埚内的原料在交变电磁场作用下依靠涡流持续发热，并由中心向周围逐渐熔化，直到达到需要的熔化边界，然后保温一定时间，保证原料充分反应并生成石榴石相，最后降至室温，坩埚内即为合成的多晶料；在中心位置原料熔化量满足感应线圈对物料加热电导率的要求后，关闭电弧加热装置的电源。
  7. 根据权利要求6所述的含镓石榴石结构闪烁晶体的多晶料合成方法，其特征在于：本合成方法采用权利要求1所述的含镓石榴石结构闪烁晶体的多晶料合成装置，具体操作步骤如下，
    1)根据待合成含镓石榴石结构闪烁晶体多晶料的化学分子式所规定的化学计量比称取各粉末原料，将称好的粉末原料均匀混合得混合原料，所有粉末原料的纯度≥99.99％；
    2)将步骤1)的混合原料放置在坩埚中；
    3)启动与感应线圈连接的电源，产生交变的感应电磁场；
    4)启动电弧加热装置，依靠电弧放电产生的高温对坩埚中心的原料进行加热，并使中心位置的原料首先熔化，中心位置原料熔化后电导率增加，满足感应线圈对物料加热电导率的要求；
    5)逐步增加感应线圈的输出功率，使得坩埚内的原料能在交变电磁场作用下依靠涡流持续发热；在中心位置原料熔化量满足感应线圈对原料加热电导率的要求后，关闭电弧加热装置的电源；
    6)进一步增加感应线圈的输出功率，使原料从中心逐步向外熔化，直到达到需要的熔化边界，再恒温0.5～4小时，以保证原料充分反应并生成石榴石相；
    7)恒温时间结束，按照一定速率降温到室温，坩埚内即为合成的多晶料。
  8. 根据权利要求7所述的含镓石榴石结构闪烁晶体的多晶料合成方法，其特征在于：步骤6)需要的熔化边界按如下要求确定，控制感应线圈的加热功率以防止坩埚与熔体直接接触，保证坩埚与熔体间留有一层粉末原料将坩埚与熔体隔离，使生成的多晶料不被坩埚污染。
  9. 根据权利要求7所述的含镓石榴石结构闪烁晶体的多晶料合成方法，其特征在于：上述步骤1)～步骤7)操作的气氛为空气气氛，或由O 2与N 2、Ar或CO 2中的任意一种、两种或三种气体混合构成的混合气体气氛，其中O 2的含量高于3.0vol.％，从而抑制Ga 2O 3分解。
  10. 根据权利要求7所述的含镓石榴石结构闪烁晶体的多晶料合成方法，其特征在于：步骤7)中的感应线圈功率从最大值降低到零所需的时间为0.1小时～200小时。
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