WO2020228235A1 - 阵列基板及其制备方法、柔性显示面板 - Google Patents

阵列基板及其制备方法、柔性显示面板 Download PDF

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Publication number
WO2020228235A1
WO2020228235A1 PCT/CN2019/111106 CN2019111106W WO2020228235A1 WO 2020228235 A1 WO2020228235 A1 WO 2020228235A1 CN 2019111106 W CN2019111106 W CN 2019111106W WO 2020228235 A1 WO2020228235 A1 WO 2020228235A1
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Prior art keywords
film layer
layer
substrate
organic soft
inorganic film
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PCT/CN2019/111106
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English (en)
French (fr)
Inventor
卢瑞
王一佳
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/613,118 priority Critical patent/US11380717B2/en
Publication of WO2020228235A1 publication Critical patent/WO2020228235A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a flexible display panel.
  • OLED Organic Light-Emitting Diode, organic light-emitting diode
  • display devices have been widely used due to their self-luminescence, wide viewing angle, high contrast, low power consumption, high response rate, and flexibility. Due to its bendability and flexibility, flexible OLED display panels are more durable than ordinary rigid panels. However, when flexible OLED display panels are generally bent, stress will appear, which affects their bending performance.
  • the existing flexible OLED display panel is usually composed of an array substrate, a light-emitting material, and an encapsulation layer, and most of the above-mentioned structures are composed of a metal film layer, an inorganic film layer, and an organic film layer.
  • Inorganic film and metal film generate greater stress when bending, especially the array substrate is usually superimposed by multiple inorganic layers, which is prone to stress concentration, which leads to cracks in the display panel, which affects the bending performance and affects display.
  • the present invention provides an array substrate to solve the problem of the existing flexible OLED display panel. Since the array substrate is provided with multiple inorganic film layers and metal film layers, the stress of the inorganic film layer and the metal film layer is relatively large. When the display panel is bent, stress concentration is prone to occur, causing cracks in the flexible OLED display panel, affecting the bending performance, and then affecting the technical problems of the display.
  • the present invention provides an array substrate, including a substrate, at least one inorganic film layer, and at least one organic soft film layer.
  • the inorganic film layer is disposed on the substrate, and the organic soft film layer is disposed on the substrate.
  • the organic soft film layer is in contact with a surface of the inorganic film layer close to the substrate.
  • the surface of the inorganic film layer on one side close to the substrate and the surface on the opposite side thereof are both wave-shaped.
  • the inorganic film layer is one or more of the buffer layer, the gate insulating layer, and the interlayer insulating layer in the array substrate.
  • the material of the organic soft film layer is polyhexamethyldisiloxane or aluminum polyethylene glycol.
  • the present invention also provides a method for preparing the array substrate, including the following steps:
  • the material of the organic soft film layer is polyhexamethyldisiloxane or aluminum polyethylene glycol.
  • the surface of the inorganic film layer on one side close to the substrate and the surface on the opposite side thereof are both wave-shaped.
  • the inorganic film layer is one or more of the buffer layer, the gate insulating layer, and the interlayer insulating layer in the array substrate.
  • the present invention also provides a flexible display panel, including: an array substrate, a light-emitting layer provided on the array substrate, and an encapsulation layer provided on the light-emitting layer, the array substrate including a substrate and an organic The soft film layer and the inorganic film layer, wherein the surface of the organic soft film layer close to the inorganic film layer is wavy.
  • the organic soft film layer is in contact with a surface of the inorganic film layer close to the substrate.
  • the surface of the inorganic film layer on one side close to the substrate and the surface on the opposite side thereof are both wave-shaped.
  • the inorganic film layer is one or more of the buffer layer, the gate insulating layer, and the interlayer insulating layer in the array substrate.
  • the beneficial effects of the present invention are: by adding an organic soft film layer under the inorganic film layer on the array substrate, the compressive stress generated by the inorganic film layer on the organic soft film layer is used to cause the upper surface of the organic soft film layer to undergo wave deformation, and The inorganic film layer above it then forms a wave shape, which can reduce the stress concentration phenomenon of the flexible display panel during bending.
  • the stress generated by the inorganic film layer during bending can be slowly released by the organic soft film layer below, and the undulating waves
  • the shaped inorganic film layer is more conducive to bending, thereby improving the bending performance of the flexible display panel.
  • FIG. 1 is a schematic diagram of the structure of the array substrate of the present invention.
  • FIG. 2 is a schematic diagram of the structure of the array substrate of the first embodiment
  • FIG. 3 is a flowchart of the steps of the method for manufacturing the flexible display panel of the present invention.
  • FIG. 7 is a schematic diagram of the structure of the flexible display panel of the first embodiment
  • FIG. 9 is a schematic diagram of the structure of the array substrate of the third embodiment.
  • the present invention is directed to the existing flexible display panel. Since the array substrate is provided with multiple inorganic film layers and metal film layers, the stress of the inorganic film layer and the metal film layer is relatively large. When the flexible OLED display panel is bent, Stress concentration is easy to occur, causing cracks in the flexible OLED display panel, which affects the bending performance, and further affects the technical problem of display. This embodiment can solve this defect.
  • the present invention provides an array substrate 10, which includes a substrate 11, at least one inorganic film layer 13, and at least one organic soft film layer 12.
  • the inorganic film layer 13 is disposed on the substrate 11
  • the organic soft film layer 12 is disposed on the side of the inorganic film layer 13 close to the substrate 11, and the surface of the organic soft film layer 12 close to the inorganic film layer 13 is wavy .
  • the organic soft film layer 12 is disposed on the substrate 11
  • the inorganic film layer 13 is disposed on the organic soft film layer 12
  • the organic soft film layer 12 and the inorganic film layer 13 The surface close to the substrate 11 is in contact with each other.
  • Both the surface of the inorganic film layer 13 on one side close to the substrate 11 and the surface on the opposite side thereof have a wave shape corresponding to the shape of the organic soft film layer 12.
  • the material of the organic soft film layer 12 is one of polyhexamethyldisiloxane and aluminum polyethylene glycol.
  • the inorganic film layer 13 There is a stress difference between the inorganic film layer 13 and the organic soft film layer 12. After the organic soft film layer 12 is deposited on the substrate 11, the surface of the organic soft film layer 12 is flat. When the inorganic film layer 13 is deposited on the surface of the organic soft film layer 12, the inorganic film layer 13 generates compressive stress on the organic soft film layer 12, so that the organic soft film layer 12 spontaneously forms waves The inorganic film layer 13 shrinks to form a wave shape during the film forming process.
  • the array substrate 10 When the array substrate 10 is applied to a flexible display panel, it needs to be bent. However, in the array substrate 10, there are multiple inorganic film layers 13 covering the entire surface of the substrate 11, and each inorganic film layer 13 has no When the stress is relieved, cracks appear when bending. By arranging a layer of organic soft film layer 12 under the inorganic film layer 13, the stress caused by bending can be effectively relieved, thereby improving the OLED flexible display panel. The bending effect.
  • the inorganic film layer 13 is one or more of the buffer layer, the gate insulating layer, and the interlayer insulating layer in the array substrate 10. Since these film layers are made of inorganic materials, they are subjected to bending during bending. Therefore, the organic soft film layer 12 can be provided under the buffer layer, the gate insulating layer, and the interlayer insulating layer to relieve the stress.
  • the present invention also provides a method for preparing the aforementioned array substrate 10, which includes the following steps:
  • the substrate 11 may be a flexible substrate, such as a polyimide substrate, on which thin film transistor devices, such as source and drain electrodes, and gates, are prepared.
  • a layer of organic soft film material is deposited on the substrate 11, such as polyhexamethyldisiloxane, polyethylene glycol aluminum, the organic soft film material has a small stress and will be affected by compressive stress. Spontaneously formed waves.
  • PECVD Plasma chemical vapor deposition
  • inorganic material such as one or more of silicon nitride, silicon oxide, or silicon oxynitride
  • the present invention also provides a flexible display panel including the above-mentioned array substrate 10, and the flexible display panel further includes a light-emitting layer provided on the array substrate 10 and an encapsulation layer provided on the light-emitting layer.
  • the array substrate 10 includes a substrate 11, a buffer layer 13a, an active layer 14, a first gate insulating layer 13b, a first gate layer 15, and a second gate insulating layer 13c arranged in sequence.
  • the second gate layer 16 the organic soft film layer 12, the interlayer insulating layer 13d, the source and drain layer 17, and the flat layer 18.
  • the substrate 11 is a flexible substrate, the substrate 11 may be a single-layer or multi-layer structure, and the substrate 11 is formed of organic matter after coating and curing steps.
  • the buffer layer 13a is made of inorganic materials such as silicon nitride, silicon oxide, etc., and can be prepared by a PECVD process.
  • the buffer layer 13a functions to protect the substrate 11.
  • the material of the active layer 14 is polysilicon, which can be prepared by PECVD process.
  • the first gate layer 15 is used to form a gate
  • the second gate layer 16 is used to form a capacitor and part of the driving circuit wiring
  • the first gate layer 15 and the second gate layer 16 They are all made of metal materials by physical vapor deposition or sputtering.
  • the first gate insulating layer 13 b covers the active layer 14, and the second gate insulating layer 13 c covers the first gate layer 15.
  • the material of the first gate insulating layer 13b and the second gate insulating layer 13c is one of silicon nitride or silicon oxide, both of which can be prepared by chemical vapor deposition.
  • the interlayer insulating layer 13d, the organic soft film layer 12, the second gate insulating layer 13c, and the first gate insulating layer 13a are all provided with via holes for the source and drain
  • the source or drain on the electrode layer 17 is in contact with the active layer to form an electrical connection.
  • the material of the interlayer insulating layer 13d is an inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, etc., which can be prepared by a PECVD process.
  • the film thickness of the interlayer insulating layer 13d is thicker, the film thickness is about 2 to 4 times that of the underlying gate insulating layer. The thicker the thickness of the inorganic film layer, the more easily the stress will be concentrated during bending. , Thereby generating cracks, so the organic soft film layer 12 is provided under the interlayer insulating layer 13d to relieve stress.
  • the material of the organic soft film layer 12 is one of polyhexamethyldisiloxane and aluminum polyethylene glycol.
  • the surface of the organic soft film layer 12 close to the interlayer insulating layer 13d is wavy, the stress of the organic soft film layer 12 is small, and the interlayer is deposited on the surface of the organic soft film layer 12.
  • the organic soft film layer 12 undergoes wave deformation after being subjected to the compressive stress of the upper film layer, and its upper surface spontaneously forms a wave-shaped structure, and the interlayer insulating layer 13 above it also follows Form a wave shape.
  • the organic soft film layer 12 below will share part of the stress, which reduces the stress concentration during bending, thereby improving the bending effect.
  • the wave-shaped The interlayer insulating layer 13 can have enough space to relieve the stress generated during bending.
  • the material of the flat layer 18 is an organic material, which provides a flat surface for the subsequent preparation of the light-emitting layer.
  • the flat layer 18 covers the surface of the wavy interlayer insulating layer 13d, which is also beneficial to relieve the stress caused by bending .
  • this embodiment also provides a method for preparing the above-mentioned array substrate 10, including:
  • a buffer layer 13 a, an active layer 14, a first gate insulating layer 13 b, a first gate layer 15, a second gate insulating layer 13 c, and a second gate layer 16 are prepared on the substrate 11.
  • the material of the organic soft film layer 12 is deposited on the second gate insulating layer 13c by PECVD or physical vapor deposition, and then the organic soft film layer
  • the material of the interlayer insulating layer 13d is deposited on the 12, and the interlayer insulating layer 13d is the inorganic film layer 12.
  • the stress of the material of the organic soft film layer 12 is less than the stress of the material of the interlayer insulating layer 13d.
  • the organic soft film layer 12 spontaneously forms a wave structure after being subjected to the compressive stress of the interlayer insulating layer 13d.
  • the interlayer insulating layer 13d also forms a wave structure accordingly.
  • the surface of the organic soft film layer 12 close to the interlayer insulating layer 13d is wavy, and the surface of the interlayer insulating layer 13d close to the substrate 11 is opposite to the other side The surface is wavy.
  • the material of the organic soft film layer 12 is one of polyhexamethyldisiloxane and aluminum polyethylene glycol.
  • the interlayer insulating layer 13d may have a two-layer or multi-layer structure, and the material of the interlayer insulating layer 13d is one of silicon nitride, silicon oxide, and silicon oxynitride.
  • the organic soft film layer 12 may also be disposed under other inorganic film layers 13, and the inorganic film layer 13 may be a buffer layer 13a, a first gate insulating layer 13b, and a second gate insulating layer. Layer 13c and other film layers.
  • this embodiment also provides a flexible display panel 100, which includes the above-mentioned array substrate 10, a light-emitting layer 20 disposed on the array substrate 10, and a light-emitting layer 20. ⁇ encapsulation layer 30.
  • the light-emitting layer 20 includes an anode layer 21 and an organic light-emitting material layer 22 arranged in sequence, the anode layer 21 is arranged on the flat layer 18, and the organic light-emitting material layer 22 is arranged on the anode layer 21 .
  • a pixel defining layer 19 is further provided on the flat layer 18, and a plurality of openings are provided on the pixel defining layer 19 to accommodate the organic light emitting material layer 22.
  • the pixel defining layer 19 is provided with a support pad 23, and the support pad 23 plays a supporting role to prevent the organic light emitting material layer 22 from being scratched by the mask when the organic light emitting material is evaporated.
  • the pixel defining layer 19 and the supporting pad 23 are both organic film layers, which can be formed by coating and curing.
  • the encapsulation layer 30 covers the light-emitting layer 20 to prevent water and oxygen from affecting the performance of the flexible light-emitting device.
  • the encapsulation layer 30 includes a first inorganic encapsulation layer 31, an organic encapsulation layer 32, and a second inorganic encapsulation layer 33 stacked in sequence.
  • the first inorganic encapsulation layer 31 and the second inorganic encapsulation layer 33 play a role of isolating water and oxygen, and the organic encapsulation layer 32 plays a role of releasing stress and encapsulating foreign matter.
  • the inorganic encapsulation layer of the encapsulation layer 30 is relatively thick, the organic encapsulation layer 32 in the middle can relieve stress and is easy to be bent.
  • the first inorganic encapsulation layer 31 and the second inorganic encapsulation layer 33 are one or more combinations of silicon nitride, silicon oxide, silicon oxynitride, and aluminum oxide, and the organic encapsulation layer 32 is polyhexamethylene. Disiloxane or acrylic acid.
  • the specific structure of the array substrate 10 in the flexible display panel 100 is the same as the above-mentioned embodiment, and will not be repeated here.
  • the difference from the first embodiment is that the organic soft film layer 12 in this embodiment can be disposed under the buffer layer 13 a to wave the structure of the buffer layer 13 a.
  • the organic soft film layer 12 is disposed on the surface of the substrate 11, and the buffer layer 13 a is disposed on the surface of the organic soft film layer 12.
  • the upper surface of the organic soft film layer 12 is wavy under the compressive stress of the upper film layer, and accordingly, the upper and lower surfaces of the buffer layer 13a also form a wavy structure. After that, the lower surfaces of the active layer and the first gate insulating layer formed on the buffer layer 13a are also wavy, which is more favorable for bending.
  • the difference from the first embodiment is that the organic soft film layer 12 in this embodiment can be disposed under the first gate insulating layer 13b, and the first gate insulating layer The structure of 13b is waved.
  • the organic soft film layer 12 is disposed on the active layer 14, and the first gate insulating layer 13 b is disposed on the surface of the organic soft film layer 12.
  • the upper surface of the organic soft film layer 12 is wavy under the compressive stress of the upper film layer, and accordingly, the upper and lower surfaces of the first gate insulating layer 13b also form a wavy structure. After that, the lower surface of the second gate insulating layer formed on the first gate insulating layer 13b is also wavy, which is more favorable for bending.
  • the organic soft film layer 12 is disposed between the buffer layer 13a and the first gate insulating layer 13b, and can simultaneously relieve the stress generated by the upper and lower inorganic film layers during bending.
  • the compressive stress generated by the inorganic film layer on the organic soft film layer is used to cause the upper surface of the organic soft film layer to undergo wave deformation, and the inorganic film layer above it
  • the film layer then forms a wave shape, which can reduce the stress concentration phenomenon of the flexible display panel during bending.
  • the stress generated by the inorganic film layer during bending can be slowly released by the organic soft film layer below, and the undulating wave-shaped inorganic film The layer is more conducive to bending, thereby improving the bending performance of the flexible display panel.

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Abstract

一种阵列基板包括一衬底、至少一无机膜层、以及至少一有机软膜层，有机软膜层设置于无机膜层靠近衬底的一侧，有机软膜层靠近无机膜层的一侧表面呈波浪形。通过利用无机膜层对有机软膜层产生压应力，使得有机软膜层发生波浪形变，无机膜层也随之形成波浪形，减弱面板在弯折时的应力集中现象，提高柔性显示面板的弯折性能。

Description

阵列基板及其制备方法、柔性显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制备方法、柔性显示面板。
 背景技术
OLED（Organic Light-Emitting Diode，有机发光二极管）显示器件由于其具有自发光性、广视角、高对比度、低电耗、高反应速率、可弯曲等优点，得到了广泛的而是用。柔性OLED显示面板因其可弯曲性和柔韧性，耐用程度高于普通的刚性面板，但是通常柔性OLED显示面板在被弯曲的时候，会出现应力，从而影响其弯折性能。
现有的柔性OLED显示面板通常由阵列基板、发光材料、以及封装层构成，且上述结构多数由金属膜层、无机膜层以及有机膜层叠加而成。无机膜层和金属膜层在弯曲的时候产生的应力较大，尤其是阵列基板通常由多层无机层叠加，易出现应力集中的情况，从而导致显示面板出现裂纹，影响弯折性能，进而影响显示。
 技术问题
本发明提供一种阵列基板，以解决现有的柔性OLED显示面板，由于阵列基板中设置有多层无机膜层和金属膜层，然而无机膜层和金属膜层的应力较大，在柔性OLED显示面板进行弯折的时候，容易出现应力集中的情况，导致柔性OLED显示面板出现裂纹，影响弯折性能，进而影响显示的技术问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种阵列基板，包括一衬底、至少一无机膜层、以及至少一有机软膜层，所述无机膜层设置于所述衬底上，所述有机软膜层设置于所述无机膜层的靠近所述衬底的一侧，其中，所述有机软膜层靠近所述无机膜层的一侧表面呈波浪形。
在本发明的一种实施例中，所述有机软膜层与所述无机膜层的靠近所述衬底的一侧表面接触。
在本发明的一种实施例中，所述无机膜层的靠近所述衬底的一侧表面与其相对的另一侧表面均呈波浪形。
在本发明的一种实施例中，所述无机膜层为阵列基板中的缓冲层、栅极绝缘层、层间绝缘层中的一种或多种膜层。
在本发明的一种实施例中，所述有机软膜层的材料为聚六甲基二硅醚或聚乙二醇铝。
本发明还提供一种阵列基板的制备方法，包括以下步骤：
S10，提供一衬底，在所述衬底上形成有机软膜层；
S20，在所述有机软膜层表面形成无机膜层，其中，所述无机膜层对所述有机软膜层产生压应力，使得所述有机软膜层发生波浪形变。
在本发明的一种实施例中，所述有机软膜层的材料为聚六甲基二硅醚或聚乙二醇铝。
在本发明的一种实施例中，所述无机膜层的靠近所述衬底的一侧表面与其相对的另一侧表面均呈波浪形。
在本发明的一种实施例中，所述无机膜层为阵列基板中的缓冲层、栅极绝缘层、层间绝缘层中的一种或多种膜层。
本发明还提供一种柔性显示面板，包括：阵列基板、设置于所述阵列基板上的发光层、以及设置于所述发光层上的封装层，所述阵列基板包括依次设置的衬底、有机软膜层、以及无机膜层，其中，所述有机软膜层靠近所述无机膜层的一侧表面呈波浪形。
在本发明的一种实施例中，所述有机软膜层与所述无机膜层的靠近所述衬底的一侧表面接触。
在本发明的一种实施例中，所述无机膜层的靠近所述衬底的一侧表面与其相对的另一侧表面均呈波浪形。
在本发明的一种实施例中，所述无机膜层为阵列基板中的缓冲层、栅极绝缘层、层间绝缘层中的一种或多种膜层。
 有益效果
本发明的有益效果为：通过在阵列基板上的无机膜层下方增加有机软膜层，利用无机膜层对有机软膜层产生的压应力，使得有机软膜层的上表面发生波浪形变，且其上方的无机膜层随之形成波浪形，能够减弱柔性显示面板在弯折时的应力集中现象，弯折时无机膜层产生的应力可由下方的有机软膜层进行缓释，且起伏的波浪形状的无机膜层更有利于弯折，进而提高柔性显示面板的弯折性能。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的阵列基板的结构示意图；
图2为实施例一的阵列基板的结构示意图；
图3为本发明的柔性显示面板的制备方法的步骤流程图；
图4~6为实施例一的阵列基板的的制备过程的结构示意图；
图7为实施例一的柔性显示面板的结构示意图；
图8为实施例二的阵列基板的结构示意图；
图9为实施例三的阵列基板的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的柔性显示面板，由于阵列基板中设置有多层无机膜层和金属膜层，然而无机膜层和金属膜层的应力较大，在柔性OLED显示面板进行弯折的时候，容易出现应力集中的情况，导致柔性OLED显示面板出现裂纹，影响弯折性能，进而影响显示的技术问题，本实施例能够解决该缺陷。
如图1所示，本发明提供一种阵列基板10，包括一衬底11、至少一无机膜层13、以及至少一有机软膜层12，所述无机膜层13设置于所述衬底11上，所述有机软膜层12设置于所述无机膜层13的靠近所述衬底11的一侧，且所述有机软膜层12靠近所述无机膜层13的一侧表面呈波浪形。
具体地，所述有机软膜层12设置于所述衬底11上，所述无机膜层13设置于所述有机软膜层12上，所述有机软膜层12与所述无机膜层13的靠近所述衬底11的一侧表面相接触。
所述无机膜层13的靠近所述衬底11的一侧表面及其相对的另一侧表面均呈与所述有机软膜层12的形状相对应的波浪形状。
所述有机软膜层12的材料为聚六甲基二硅醚和聚乙二醇铝中的一种。
所述无机膜层13与所述有机软膜层12之间存在应力差，所述有机软膜层12沉积于所述衬底11上之后，此时所述有机软膜层12的表面为平整的，当所述有机软膜层12表面有所述无机膜层13沉积时，所述无机膜层13对所述有机软膜层12产生压应力，使得所述有机软膜层12自发形成波浪状结构，所述无机膜层13在成膜过程中随之收缩形成波浪状。
所述阵列基板10在应用于柔性显示面板时，需要进行弯折，然而阵列基板10中有多层所述无机膜层13整面覆盖在所述衬底11上，且各个无机膜层13无处缓释应力，导致弯折的时候，出现裂纹，通过在所述无机膜层13的下方设置一层有机软膜层12，能够有效缓释因弯折产生的应力，进而提升OLED柔性显示面板的弯折效果。
所述无机膜层13为阵列基板10中的缓冲层、栅极绝缘层、层间绝缘层中的一种或多种膜层，由于这些膜层为无机材料制备的，在弯折的时候受到的应力较大，因此所述缓冲层、栅极绝缘层、层间绝缘层的下方均可设置有机软膜层12，进而缓释应力。
如图3所示，本发明还提供一种上述阵列基板10的制备方法，包括以下步骤：
S10，提供一衬底11，在所述衬底11上形成有机软膜层12；
S20，在所述有机软膜层12表面形成无机膜层13，其中，所述无机膜层13对所述有机软膜层12产生压应力，使得所述有机软膜层12发生波浪形变。
其中，所述衬底11可为柔性基板，例如聚酰亚胺基板，所述衬底11上制备有薄膜晶体管器件，例如源漏极、栅极。
首先，在所述衬底11上沉积一层有机软膜材料，例如聚六甲基二硅醚、聚乙二醇铝，所述有机软膜材料的应力较小，在受到压应力作用时会自发形成波浪状。
之后，利用等离子体化学气相沉积法( PECVD，Plasma Enhanced Chemical Vapor Deposition ) 在所述有机软膜材料表面沉积至少一层无机材料，例如氮化硅、氧化硅或者氮氧化硅中的一种或多种，在所述无机材料的压应力作用下，下方的有机软膜材料发生波浪形变，形成所述有机软膜层12，上方的无机材料随之形成波浪状，形成所述无机膜层13。
本发明还提供一种包括上述阵列基板10的柔性显示面板，所述柔性显示面板还包括设置于所述阵列基板10上的发光层，以及设置于所述发光层上的封装层。
下面结合具体实施例，对上述阵列基板及其制备方法、柔性显示面板进行说明。
实施例一
如图2所示，所述阵列基板10包括依次设置的衬底11、缓冲层13a，有源层14、第一栅极绝缘层13b、第一栅极层15、第二栅极绝缘层13c、第二栅极层16、有机软膜层12、层间绝缘层13d、源漏极层17、以及平坦层18。
其中，所述衬底11为柔性基板，所述衬底11可为单层或多层结构，所述衬底11由有机物经过涂布、固化步骤后形成。
所述缓冲层13a由氮化硅、氧化硅等无机材料制备而成，可通过PECVD工艺制备。所述缓冲层13a起到保护衬底11的作用。
所述有源层14的材料为多晶硅，可采取PECVD工艺制备。
所述第一栅极层15用以形成栅极，所述第二栅极层16用以构成电容及部分驱动电路走线，所述第一栅极层15和所述第二栅极层16均采用金属材料通过物理气相沉积法或溅射法制备。
所述第一栅极绝缘层13b覆盖所述有源层14，所述第二栅极绝缘层13c覆盖所述第一栅极层15。所述第一栅极绝缘层13b和所述第二栅极绝缘层13c的材料为氮化硅或氧化硅中的一种，均可通过化学气相沉积法制备。
所述层间绝缘层13d、所述有机软膜层12、所述第二栅极绝缘层13c、以及所述第一栅极绝缘层13a上均设置有过孔，以用于所述源漏极层17上的源极或漏极与所述有源层接触，形成电连接。
所述层间绝缘层13d的材料为氮化硅、氧化硅、氮氧化硅等无机材料，可通过PECVD工艺制备。
由于所述层间绝缘层13d的膜层厚度较厚，膜厚大约为下方栅极绝缘层的2~4倍，无机膜层的厚度越厚，在在弯折的时候受到的应力越易集中，从而产生裂纹，因此在所述层间绝缘层13d的下方设置所述有机软膜层12用以缓释应力。
所述有机软膜层12的材料为聚六甲基二硅醚、聚乙二醇铝中的一种。
所述有机软膜层12靠近所述层间绝缘层13d的一侧表面呈波浪形，所述有机软膜层12的应力较小，在所述有机软膜层12的表面沉积所述层间绝缘层13的材料时，由于所述有机软膜层12受到上方膜层的压应力后，发生波浪形变，其上表面自发形成波浪型结构，其上方的所述层间绝缘层13也随之形成波浪形状。所述层间绝缘层13在波浪化的过程中，下方的所述有机软膜层12会分担一部分应力，减弱弯折时的应力集中集中现象，进而提升弯折效果，另外，波浪状的所述层间绝缘层13能够有足够的空间来缓释弯折时产生的应力。
所述平坦层18的材料为有机材料，为后续制备发光层提供一平坦的表面，所述平坦层18覆盖于波浪状的层间绝缘层13d的表面，也有利于缓释弯折产生的应力。
如图4~6所示，本实施例还提供上述阵列基板10的制备方法，包括：
S10，提供一衬底11，在所述衬底11上形成有机软膜层12；
S20，在所述有机软膜层12表面形成无机膜层13，其中，所述无机膜层13对所述有机软膜层12产生压应力，使得所述有机软膜层12发生波浪形变。
具体地，所述衬底11上制备有缓冲层13a，有源层14、第一栅极绝缘层13b、第一栅极层15、第二栅极绝缘层13c、第二栅极层16。
在完成所述第二栅极层16制备工艺后，通过PECVD或物理气相沉积法，在所述第二栅极绝缘层13c上沉积有机软膜层12的材料，之后在所述有机软膜层12上沉积层间绝缘层13d的材料，所述层间绝缘层13d即为所述无机膜层12。
所述有机软膜层12材料的应力小于所述层间绝缘层13d材料的应力，所述有机软膜层12在受到所述层间绝缘层13d的压应力后，自发形成波浪结构，所述层间绝缘层13d也随之形成波浪结构。
具体地，所述有机软膜层12靠近所述层间绝缘层13d的一侧表面呈波浪形，所述层间绝缘层13d的靠近所述衬底11的一侧表面与其相对的另一侧表面均呈波浪形。
其中，所述有机软膜层12的材料为聚六甲基二硅醚、聚乙二醇铝中的一种。
所述层间绝缘层13d可为两层或多层结构，所述层间绝缘层13d的材料为氮化硅、氧化硅、氮氧化硅中的一种。
之后，利用曝光、显影、刻蚀等制程，在波浪状的层间绝缘层13d上进行挖孔，以便于后续制备的源漏极层17与有源层14连接。
在其他实施例中，所述有机软膜层12也可设置于其他无机膜层13的下方，所述无机膜层13可为缓冲层13a、第一栅极绝缘层13b、第二栅极绝缘层13c等膜层。
如图7所示，本实施例还提供一种柔性显示面板100，所述柔性显示面板包括上述阵列基板10、设置于所述阵列基板10上的发光层20、以及设置于所述发光层20上的封装层30。
其中，所述发光层20包括依次设置的阳极层21和有机发光材料层22，所述阳极层21设置于所述平坦层18上，所述有机发光材料层22设置于所述阳极层21上。
所述平坦层18上还设置有像素定义层19，所述像素定义层19上设置有多个开口，用以容纳所述有机发光材料层22。
所述像素定义层19上设置有支撑垫23，所述支撑垫23起到支撑作用，避免在蒸镀有机发光材料时，掩模板对所述有机发光材料层22造成刮伤。
其中所述像素定义层19和所述支撑垫23均为有机膜层，可经过涂布、固化形成。
所述封装层30覆盖所述发光层20，避免水氧对柔性发光器件性能造成影响。
所述封装层30包括依次层叠设置的第一无机封装层31、有机封装层32、以及第二无机封装层33。所述第一无机封装层31和所述第二无机封装层33起到隔绝水氧的作用，所述有机封装层32起到缓释应力，包裹异物的作用。虽然所述封装层30的无机封装层较厚，但是中间的有机封装层32可缓释应力，易于实现弯折。
所述第一无机封装层31和所述第二无机封装层33为氮化硅、氧化硅、氮氧化硅、氧化铝中的一种或多种组合，所述有机封装层32为聚六甲基二硅醚或丙烯酸。
所述柔性显示面板100中的阵列基板10的具体结构与上述实施例相同，这里不再赘述。
实施例二
如图8所示，与实施例一不同的是，本实施例中的所述有机软膜层12可设置于所述缓冲层13a的下方，将所述缓冲层13a的结构进行波浪化。所述有机软膜层12设置于所述衬底11的表面，所述缓冲层13a设置于所述有机软膜层12的表面。
所述有机软膜层12在受到上方膜层的压应力作用下，其上表面形成波浪状，随之，所述缓冲层13a的上表面和下表面也形成波浪状结构。之后，在所述缓冲层13a上形成的有源层和第一栅极绝缘层的下表面也为波浪状，更有利于弯折。
本实施例的其他结构均与实施例一相同，具体可参考实施例一，这里不再赘述。
实施例三
如图9所示，与实施例一不同的是，本实施例中的所述有机软膜层12可设置于所述第一栅极绝缘层13b的下方，将所述第一栅极绝缘层13b的结构进行波浪化。所述有机软膜层12设置于所述有源层14上，所述第一栅极绝缘层13b设置于所述有机软膜层12表面。
所述有机软膜层12在受到上方膜层的压应力作用下，其上表面形成波浪状，随之，所述第一栅极绝缘层13b的上表面和下表面也形成波浪状结构。之后，在所述第一栅极绝缘层13b上形成的第二栅极绝缘层的下表面也为波浪状，更有利于弯折。
所述有机软膜层12设置于所述缓冲层13a和所述第一栅极绝缘层13b之间，能同时缓释上下两层无机膜层在弯折时产生的应力。
本实施例的其他结构与实施例一相同，具体可参考实施例一，这里不再赘述。
有益效果：通过在阵列基板上的无机膜层下方增加有机软膜层，利用无机膜层对有机软膜层产生的压应力，使得有机软膜层的上表面发生波浪形变，且其上方的无机膜层随之形成波浪形，能够减弱柔性显示面板在弯折时的应力集中现象，弯折时无机膜层产生的应力可由下方的有机软膜层进行缓释，且起伏的波浪形状的无机膜层更有利于弯折，进而提高柔性显示面板的弯折性能。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (14)

  1. 一种阵列基板，其中，包括：
    一衬底；
    至少一无机膜层，设置于所述衬底上；以及
    至少一有机软膜层，设置于所述无机膜层的靠近所述衬底的一侧，其中；
    所述有机软膜层靠近所述无机膜层的一侧表面呈波浪形。
  2. 根据权利要求1所述的阵列基板，其中，所述有机软膜层与所述无机膜层的靠近所述衬底的一侧表面接触。
  3. 根据权利要求2所述的阵列基板，其中，所述无机膜层的靠近所述衬底的一侧表面与其相对的另一侧表面均呈波浪形。
  4. 根据权利要求3所述的阵列基板，其中，所述无机膜层为阵列基板中的缓冲层、栅极绝缘层、层间绝缘层中的一种或多种膜层。
  5. 根据权利要求1所述的阵列基板，其中，所述有机软膜层的材料为聚六甲基二硅醚或聚乙二醇铝。
  6. 一种阵列基板的制备方法，其中，包括以下步骤：
    S10，提供一衬底，在所述衬底上形成有机软膜层；
    S20，在所述有机软膜层表面形成无机膜层，其中，所述无机膜层对所述有机软膜层产生压应力，使得所述有机软膜层发生波浪形变。
  7. 根据权利要求6所述的制备方法，其中，所述有机软膜层的材料为聚六甲基二硅醚或聚乙二醇铝。
  8. 根据权利要求6所述的制备方法，其中，所述无机膜层的靠近所述衬底的一侧表面与其相对的另一侧表面均呈波浪形。
  9. 根据权利要求6所述的制备方法，其中，所述无机膜层为阵列基板中的缓冲层、栅极绝缘层、层间绝缘层中的一种或多种膜层。
  10. 一种柔性显示面板，包括：
    阵列基板，包括依次设置的衬底、有机软膜层、以及无机膜层；
    发光层，设置于所述阵列基板上；以及
    封装层，设置于所述发光层上；其中，
    所述有机软膜层靠近所述无机膜层的一侧表面呈波浪形。
  11. 根据权利要求10所述的柔性显示面板，其中，所述有机软膜层与所述无机膜层的靠近所述衬底的一侧表面接触。
  12. 根据权利要求11所述的柔性显示面板，其中，所述无机膜层的靠近所述衬底的一侧表面与其相对的另一侧表面均呈波浪形。
  13. 根据权利要求12所述的柔性显示面板，其中，所述无机膜层为阵列基板中的缓冲层、栅极绝缘层、层间绝缘层中的一种或多种膜层。
  14. 根据权利要求10所述的柔性显示面板，其中，所述有机软膜层的材料为聚六甲基二硅醚或聚乙二醇铝。
PCT/CN2019/111106 2019-05-14 2019-10-14 阵列基板及其制备方法、柔性显示面板 Ceased WO2020228235A1 (zh)

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