CN111710691A - 柔性Micro-LED显示面板及其制作方法 - Google Patents

柔性Micro-LED显示面板及其制作方法 Download PDF

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CN111710691A
CN111710691A CN202010507058.0A CN202010507058A CN111710691A CN 111710691 A CN111710691 A CN 111710691A CN 202010507058 A CN202010507058 A CN 202010507058A CN 111710691 A CN111710691 A CN 111710691A
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substrate
display panel
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CN111710691B (zh
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李柱辉
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本发明提供一种柔性Micro‑LED显示面板及其制作方法，柔性Micro‑LED显示面板包括第一衬底基板、薄膜晶体管阵列层、第一连接电极层、第二连接电极层，设置于所述第一连接电极层上、多个Micro‑LED芯片、柔性封装层以及设置于柔性封装层上的第二衬底基板，第一衬底基板和所述第二衬底基板均为柔性基板，通过在覆盖Micro‑LED芯片的柔性封装层上设置第二衬底基板来使柔性显示面板的中性层位于薄膜晶体管阵列层上，从而降低断线风险，实现Micro‑LED显示面板柔性显示。

Description

柔性Micro-LED显示面板及其制作方法
技术领域
本发明涉及显示技术领域，尤其涉及一种柔性Micro-LED显示面板及其制作方法。
背景技术
微发光二极管(Micro-Light Emitting Diode，Micro-LED)显示面板因兼具有机发光二极管显示面板(Organic Light-Emitting Diode，OLED)轻薄、可柔、抗摔、可折叠等优点，同时还具有寿命长、超低功耗、高响应速度、高透明度等优势，被视为下一代最具发展潜力的新型显示技术，非常符合未来的发展趋势。
目前已有多家厂商研发的刚性Micro-LED显示面板展出，然而柔性Micro-LED显示面板却因技术上存在很多缺陷，离量产还有一段距离；柔性Micro-LED显示面板的主要难点体现在低良率上，主要表现在Micro-LED芯片巨量转移及容易发生断线等方面，从而导致成产成本较高。
综上所述，需要提供一种新的柔性Micro-LED显示面板及其制作方法，来解决上述技术问题。
发明内容
本发明提供的柔性Micro-LED显示面板及其制作方法，解决了现有的Micro-LED显示面板不易弯折且容易发生断线，导致产品良率低的技术问题。
为解决上述问题，本发明提供的技术方案如下：
本发明实施例提供一种柔性Micro-LED显示面板，包括：
阵列基板，包括第一衬底基板以及设置于所述第一衬底基板上的薄膜晶体管阵列层；
第一连接电极层，设置于所述薄膜晶体管阵列层上，并与所述薄膜晶体管阵列层电连接；
第二连接电极层，设置于所述第一连接电极层上；
多个Micro-LED芯片，设置于所述第二连接电极层上，所述Micro-LED芯片经由所述第一连接电极层和所述第二连接电极层连接至所述薄膜晶体管阵列层；
柔性封装层，覆盖所述Micro-LED芯片；以及
第二衬底基板，设置于所述柔性封装层上；
其中，所述第一衬底基板和所述第二衬底基板均为柔性基板，所述第二衬底基板用于控制所述柔性显示面板的中性层位于所述薄膜晶体管阵列层上。
在本发明实施例提供的柔性Micro-LED显示面板中，所述第一衬底基板和所述第二衬底基板所采用的材料为CPI。
在本发明实施例提供的柔性Micro-LED显示面板中，所述阵列基板还包括：
阻隔层，设置于所述第一衬底基板上；
遮光层，设置于所述阻隔层上；
缓冲层，覆盖所述遮光层和所述阻隔层；
有源层，设置于所述缓冲层上，所述遮光层和所述有源层相对设置；
栅极绝缘层，设置于所述有源层上；
栅极层，设置于所述栅极绝缘层上；
层间介质层，覆盖所述栅极层、所述有源层及所述缓冲层上；
源极和漏极，设置于所述层间介质层上，所述源极和所述漏极连接至所述有源层；
钝化层，覆盖所述源极、所述漏极及所述层间介质层，所述第一连接电极设置于所述钝化层上；以及
黑矩阵层，设置于相邻两个所述Micro-LED芯片之间，所述柔性封装层覆盖所述Micro-LED芯片、所述黑矩阵层以及所述第二连接电极。
在本发明实施例提供的柔性Micro-LED显示面板中，所述遮光层、所述栅极层、所述源极以及所述漏极所采用的材料为铝-钕合金。
在本发明实施例提供的柔性Micro-LED显示面板中，所述阻隔层和所述柔性封装层所采用的材料为TG-41聚合物。
在本发明实施例提供的柔性Micro-LED显示面板中，所述有源层所采用的材料为IGZO。
在本发明实施例提供的柔性Micro-LED显示面板中，所述第二衬底基板的厚度为8um～12um。
本发明实施例提供一种柔性Micro-LED显示面板的制作方法，包括以下步骤：
S10：制备阵列基板，所述阵列基板包括第一衬底基板，在所述第一衬底基板上形成薄膜晶体管阵列层；
S20：在所述薄膜晶体管阵列层上依次形成第一连接电极层、第二连接电极层以及黑矩阵层，所述第一连接电极层和所述第二连接电极层电连接；
S30：将多个Micro-LED芯片转移至所述第二连接电极层上，进行固晶键合处理，以使所述Micro-LED芯片经由所述第一连接电极层和所述第二连接电极层连接至所述薄膜晶体管阵列层；
S40：在所述Micro-LED芯片上形成柔性封装层；以及
S50：在所述柔性封装层上形成第二衬底基板，使得所述柔性显示面板的中性层A位于所述Micro-LED芯片上。
在本发明实施例提供的柔性Micro-LED显示面板的制作方法中，所述步骤S10包括以下步骤：
S101：提供所述第一衬底基板，在所述第一衬底基板上依次形成阻隔层、遮光层以及缓冲层；以及
S102：在所述缓冲层上形成所述薄膜晶体管阵列层，所述薄膜晶体管阵列层包括依次形成于所述缓冲层上的有源层、栅极绝缘层、栅极层、层间介质层、源极和漏极以及钝化层。
在本发明实施例提供的柔性Micro-LED显示面板的制作方法中，所述第一衬底基板和所述第二衬底基板所采用的材料为CPI。
本发明的有益效果为：本发明提供的柔性Micro-LED显示面板及其制作方法，通过在覆盖Micro-LED芯片的柔性封装层上设置第二衬底基板来使柔性Micro-LED显示面板的中性层位于薄膜晶体管阵列层上，从而降低断线风险；第一衬底基板和第二衬底基板均采用CPI透明柔性材料，以及通过采用IGZO工艺、AL-Nd制程以及设置阻隔层和封装层用于水氧阻隔，从而实现Micro-LED显示面板柔性显示，且具有高透明度、高响应速度、高色域、长寿命、低功耗、轻薄、耐摔等优点，可以做成小曲率甚至可以实现动态弯折，大大拓宽了显示的应用范畴。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种柔性Micro-LED显示面板的截面结构示意图；
图2为本发明实施例提供的一种柔性Micro-LED显示面板的制作方法的流程图；
图3A～图3F为本发明实施例提高的一种柔性Micro-LED显示面板的制作方法的流程结构示意图。
具体实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有技术的柔性Micro-LED显示面板不易弯折且容易发生断线，导致产品良率低，本实施例能够解决该缺陷。
如图1所示，本发明实施例提供的柔性Micro-LED显示面板，包括阵列基板、第一连接电极层112、第二连接电极层113、多个Micro-LED芯片115、柔性封装层116以及第二衬底基板117。
所述阵列基板包括第一衬底基板101以及设置于所述第一衬底基板101上的薄膜晶体管阵列层，具体地，所述阵列基板还包括阻隔层102、遮光层103、缓冲层104、层间介质层108、钝化层111以及黑矩阵层114，其中所述薄膜晶体管阵列层包括有源层105、栅极绝缘层106、栅极层107以及源极109和漏极110。
所述第一衬底基板101为柔性基板，所述第一衬底基板101所采用的材料可以为透明聚酰亚胺(Colorless Polyimide，CPI)，由于CPI材料具有传统聚酰亚胺的优异性能，具有高耐热、高可靠、耐挠曲、低密度、低介电常数、易于实现微细图形电路加工等特性，可应用于折叠屏的柔性显示技术；所述阻隔层102设置于所述第一衬底基板101上，用于防止外部水分或氧气侵蚀所述薄膜晶体管阵列层，可选地，所述阻隔层102所采用的材料可以为TG-41聚合物等复合类材料，具有良好的水氧阻隔性能；所述遮光层103设置于所述阻隔层102上，所述遮光层103与所述有源层105相对设置，可有效阻挡环境光，以对所述有源层105进行遮光保护；所述缓冲层104覆盖所述遮光层103和所述阻隔层102，所述缓冲层104可以采用氮化硅或氧化硅材料制成，起到缓冲和保护的作用。
所述有源层105设置于所述缓冲层104上，所述有源层105可以采用铟镓锌氧化物(indium gallium zinc oxide，IGZO)材料，能够使得制备的所述薄膜晶体管阵列层呈现透明柔性；所述栅极绝缘层106设置于所述有源层105上；所述栅极层107设置于所述栅极绝缘层106上；所述层间介质层108覆盖所述栅极层107、所述有源层105及所述缓冲层104上，所述层间介质层108的材料可以为氧化硅或氮化硅或氮氧化硅等绝缘材料，所述层间介质层可以是单层结构，如单层的氮化硅层、单层的氧化硅层等，也可以是多层叠层结构，如氮化硅/氧化硅叠层；所述源极109和所述漏极110设置于所述层间介质层108上，所述源极109和所述漏极110通过过孔连接至所述有源层105；所述钝化层111覆盖所述源极109、所述漏极110及所述层间介质层108，所述钝化层111的材料可以为氮化硅或氧化硅。
可选地，所述遮光层103、所述栅极层107、所述源极109以及所述漏极110所采用的材料为铝-钕合金，由于铝-钕合金很适合柔性弯折，故能够提高所述柔性Micro-LED显示面板的折叠性能。
所述第一连接电极层112设置于所述薄膜晶体管阵列层上，并与所述薄膜晶体管之间通过过孔实现电连接，所述第一连接电极层112的材料可以为氧化铟锡(Indium tinoxide，ITO)；所述第二连接电极层113设置于所述第一连接电极层112上，所述第二连接电极层113的材料可以为金属材料，例如铜。
多个Micro-LED芯片115设置于所述第二连接电极层113上，所述Micro-LED芯片115经由所述第一连接电极层112和所述第二连接电极层113连接至所述薄膜晶体管阵列层的所述漏极110上，以将电信号从薄膜晶体管传递给所述Micro-LED芯片115；具体，所述Micro-LED芯片115靠近所述第二连接电极层113的一侧设置有第一引脚1151和第二引脚1152，所述第一引脚1151和所述第二引脚1152与所述第二连接电极层113实现固晶键合。
所述黑矩阵层114设置于相邻两个所述Micro-LED芯片115之间，防止相邻两个所述Micro-LED芯片115发出的光线出现串扰。
所述柔性封装层116覆盖所述Micro-LED芯片115，用以封装所述Micro-LED芯片115，在本发明实施例中，所述柔性封装层116覆盖所述Micro-LED芯片115、所述黑矩阵层114以及所述第二连接电极层113。可选地，所述柔性封装层116的材料可以为TG-41聚合物等复合类材料，不仅具有良好的水氧阻隔性能，还能提高所述柔性Micro-LED显示面板的折叠性能。
所述第二衬底基板117设置于所述柔性封装层116上，可选地，所述第二衬底基板117的材料可以与所述第一衬底基板101的材料相同，同样采用CPI材料；由于所述柔性Micro-LED显示面板在进行折叠时，所述薄膜晶体管阵列层中的金属走线容易发生断线，故需要说明的是，所述中性层A为在所述柔性Micro-LED显示面板折叠弯曲过程中受到的应力为零的所有位置形成的面(膜层)，此处金属走线不易发生断线，故本发明实施例中，可通过调整所述第二衬底基板117的厚度来控制所述柔性Micro-LED显示面板的所述中性层A位于所述薄膜晶体管阵列层上，从而降低所述柔性Micro-LED显示面板折叠时金属走线发生断线的风险。
具体地，所述第二衬底基板117的厚度为8um～12um。
如图2所示，本发明实施例还提供一种柔性Micro-LED显示面板的制作方法，包括以下步骤：
S10：制备阵列基板，所述阵列基板包括第一衬底基板101，在所述第一衬底基板101上形成薄膜晶体管阵列层。
具体地，步骤S10包括以下步骤：
S101：提供所述第一衬底基板101，在所述第一衬底基板101上依次形成阻隔层102、遮光层103以及缓冲层104。
如图3A所示，可以采用化学气相沉积法或溅射工艺形成所述阻隔层102、具有预设图案的所述遮光层103以及覆盖所述遮光层103和部分所述阻隔层102的缓冲层104，其中，对所述遮光层103进行图案化处理的工艺可以为湿法或干法刻蚀，所述遮光层103的材料可以为铝-钕合金。
S102：在所述缓冲层104上形成所述薄膜晶体管阵列层，所述薄膜晶体管阵列层包括依次形成于所述缓冲层104上的有源层105、栅极绝缘层106、栅极层107、层间介质层108、源极109、漏极110以及钝化层111。
如图3B所示，首先，可通过化学气相沉积或其它工艺依次在所述缓冲层104远离所述第一衬底基板101的一侧上形成所述有源层105、所述栅极绝缘层106、具有预设图案的的所述栅极层107、所述层间介质层108以及源极109和漏极110，其中，所述有源层105在所述第一衬底基板101上的正投影位于所述遮光层103在所述第一衬底基板101上的正投影内，所述有源层105的材料可为IGZO；所述栅极绝缘层106的材料可为为氧化硅、氮化硅等绝缘材料；所述栅极层107、所述源极109以及所述漏极110的材料可以为铝-钕合金；所述层间介质层108的材料包括氧化硅、氮化硅、氮氧化硅中的至少一种；之后，可通过化学气相沉积或其它工艺依次在在所述源极109、所述漏极110及所述层间介质层108上形成钝化层，并形成贯穿所述钝化层111的过孔，通过所述钝化层111的材料可以为氧化硅或氮化硅或氮氧化硅等绝缘材料。
S20：在所述薄膜晶体管阵列层上依次形成第一连接电极层112、第二连接电极层113以及黑矩阵层114，所述第一连接电极层112和所述第二连接电极层113电连接。
如图3C所示，在所述钝化层111上依次形成所述第一连接电极层112、所述第二连接电极层113以及所述黑矩阵层114，所述第一连接电极层112和所述第二连接电极层113异层设置，所述黑矩阵层114覆盖部分所述钝化层111和部分所述第二连接电极层113，所述第一连接电极层112通过贯穿所述钝化层111的过孔与所述漏极110连接电连接，所述第一连接电极层112的材料可以为ITO，所述第二连接电极层113的材料可以为金属材料，例如铜。
S30：将多个Micro-LED芯片115转移至所述第二连接电极层113上，进行固晶键合处理，以使所述Micro-LED芯片115经由所述第一连接电极层112和所述第二连接电极层113连接至所述薄膜晶体管阵列层。
如图3D所示，所述Micro-LED芯片115包括第一引脚1151和第二引脚1152，将所述第一引脚1151和所述第二引脚1152与所述第二连接电极层113电连接，所述黑矩阵层114位于相邻两个所述Micro-LED芯片115之间。
S40：在所述Micro-LED芯片115上形成柔性封装层116。
如图3E所示，所述柔性封装层116用于封装所述Micro-LED芯片115，防止所述Micro-LED芯片115受到外界水氧侵蚀，所述柔性封装层116所采用的材料为TG-41聚合物等复合类材料。
S50：在所述柔性封装层116上形成第二衬底基板117，使得所述柔性Micro-LED显示面板的中性层A位于所述薄膜晶体管阵列层上。
如图3F所示，所述第二衬底基板117的材料可以为CPI，所述第二衬底基板117的厚度为8um～12um，可通过调整所述第二衬底基板117的厚度以使所述柔性Micro-LED显示面板的中形层位于所述薄膜晶体管阵列层上，以降低金属走线断线风险。
有益效果为：本发明实施例提供的柔性Micro-LED显示面板及其制作方法，通过在覆盖Micro-LED芯片的柔性封装层上设置第二衬底基板来使柔性Micro-LED显示面板的中性层位于薄膜晶体管阵列层上，从而降低金属走线断线风险；第一衬底基板和第二衬底基板均采用CPI透明柔性材料，以及通过采用IGZO工艺、AL-Nd制程以及设置阻隔层和封装层用于水氧阻隔，从而实现Micro-LED显示面板柔性显示，且具有高透明度、高响应速度、高色域、长寿命、低功耗、轻薄、耐摔等优点，可以做成小曲率甚至可以实现动态弯折，大大拓宽了显示的应用范畴。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种柔性Micro-LED显示面板，其特征在于，包括：
阵列基板，包括第一衬底基板以及设置于所述第一衬底基板上的薄膜晶体管阵列层；
第一连接电极层，设置于所述薄膜晶体管阵列层上，并与所述薄膜晶体管阵列层电连接；
第二连接电极层，设置于所述第一连接电极层上；
多个Micro-LED芯片，设置于所述第二连接电极层上，所述Micro-LED芯片经由所述第一连接电极层和所述第二连接电极层连接至所述薄膜晶体管阵列层；
柔性封装层，覆盖所述Micro-LED芯片；以及
第二衬底基板，设置于所述柔性封装层上；
其中，所述第一衬底基板和所述第二衬底基板均为柔性基板，所述第二衬底基板用于控制所述柔性显示面板的中性层位于所述薄膜晶体管阵列层上。
2.根据权利要求1所述的柔性Micro-LED显示面板，其特征在于，所述第一衬底基板和所述第二衬底基板所采用的材料为CPI。
3.根据权利要求1所述的柔性Micro-LED显示面板，其特征在于，所述阵列基板还包括：
阻隔层，设置于所述第一衬底基板上；
遮光层，设置于所述阻隔层上；
缓冲层，覆盖所述遮光层和所述阻隔层；
有源层，设置于所述缓冲层上，所述遮光层和所述有源层相对设置；
栅极绝缘层，设置于所述有源层上；
栅极层，设置于所述栅极绝缘层上；
层间介质层，覆盖所述栅极层、所述有源层及所述缓冲层上；
源极和漏极，设置于所述层间介质层上，所述源极和所述漏极连接至所述有源层；
钝化层，覆盖所述源极、所述漏极及所述层间介质层，所述第一连接电极设置于所述钝化层上；以及
黑矩阵层，设置于相邻两个所述Micro-LED芯片之间，所述柔性封装层覆盖所述Micro-LED芯片、所述黑矩阵层以及所述第二连接电极。
4.根据权利要求3所述的柔性Micro-LED显示面板，其特征在于，所述遮光层、所述栅极层、所述源极以及所述漏极所采用的材料为铝-钕合金。
5.根据权利要求3所述的柔性Micro-LED显示面板，其特征在于，所述阻隔层和所述柔性封装层所采用的材料为TG-41聚合物。
6.根据权利要求3所述的柔性Micro-LED显示面板，其特征在于，所述有源层所采用的材料为IGZO。
7.根据权利要求1所述的柔性Micro-LED显示面板，其特征在于，所述第二衬底基板的厚度为8um～12um。
8.一种柔性Micro-LED显示面板的制作方法，其特征在于，包括以下步骤：
S10：制备阵列基板，所述阵列基板包括第一衬底基板，在所述第一衬底基板上形成薄膜晶体管阵列层；
S20：在所述薄膜晶体管阵列层上依次形成第一连接电极层、第二连接电极层以及黑矩阵层，所述第一连接电极层和所述第二连接电极层电连接；
S30：将多个Micro-LED芯片转移至所述第二连接电极层上，进行固晶键合处理，以使所述Micro-LED芯片经由所述第一连接电极层和所述第二连接电极层连接至所述薄膜晶体管阵列层；
S40：在所述Micro-LED芯片上形成柔性封装层；以及
S50：在所述柔性封装层上形成第二衬底基板，使得所述柔性显示面板的中性层A位于所述Micro-LED芯片上。
9.根据权利要求8所述的柔性Micro-LED显示面板的制作方法，其特征在于，所述步骤S10包括以下步骤：
S101：提供所述第一衬底基板，在所述第一衬底基板上依次形成阻隔层、遮光层以及缓冲层；以及
S102：在所述缓冲层上形成所述薄膜晶体管阵列层，所述薄膜晶体管阵列层包括依次形成于所述缓冲层上的有源层、栅极绝缘层、栅极层、层间介质层、源极和漏极以及钝化层。
10.根据权利要求8所述的柔性Micro-LED显示面板的制作方法，其特征在于，所述第一衬底基板和所述第二衬底基板所采用的材料为CPI。
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