WO2020211206A1 - 显示面板和电子设备 - Google Patents

显示面板和电子设备 Download PDF

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Publication number
WO2020211206A1
WO2020211206A1 PCT/CN2019/096965 CN2019096965W WO2020211206A1 WO 2020211206 A1 WO2020211206 A1 WO 2020211206A1 CN 2019096965 W CN2019096965 W CN 2019096965W WO 2020211206 A1 WO2020211206 A1 WO 2020211206A1
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WO
WIPO (PCT)
Prior art keywords
anode
display panel
cathode
layer
luminescent material
Prior art date
Application number
PCT/CN2019/096965
Other languages
English (en)
French (fr)
Inventor
王幸
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/605,033 priority Critical patent/US20210336231A1/en
Publication of WO2020211206A1 publication Critical patent/WO2020211206A1/zh

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0266—Details of the structure or mounting of specific components for a display module assembly
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/02—Constructional features of telephone sets
    • H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026—Details of the structure or mounting of specific components
    • H04M1/0264—Details of the structure or mounting of specific components for a camera module assembly
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers

Definitions

  • This application relates to the field of electronic display, and in particular to a display panel and electronic equipment.
  • the latest smart devices integrate a camera under the display panel, and the display panel on the camera can have both electronic display and light transmission functions.
  • the display panel of the smart phone includes a camera area 010 and an operation area 012, and the position of the camera area 010 corresponds to the camera 011 located below the display panel.
  • the display panel 012 includes a flexible substrate 0121, a thin film transistor layer 0122, a light emitting layer 0123, an encapsulation layer 0124, a touch layer 0125, and a glass cover 0126.
  • the thin film transistor layer 0122 contains a large number of metal traces, which can reflect natural light and affect the imaging quality of the camera. Therefore, this phenomenon needs to be improved.
  • the present application provides a display panel and an electronic device to eliminate the reflection of natural light by the display panel on the camera.
  • the present application provides a display panel, the display panel including a substrate, a display area and a light-transmitting display area on the substrate;
  • the transparent display area includes:
  • a first pixel definition layer including a first opening exposing the first anode
  • a first luminescent material is located on the first anode
  • a first cathode the first cathode being located on the first luminescent material
  • a dimming layer is disposed on the first anode;
  • the dimming layer is a Bragg film.
  • the dimming layer is located between the first anode and the first pixel defining layer, or on the first cathode.
  • the dimming layer includes a light-transmitting opening, and the light-transmitting opening is arranged corresponding to the first opening.
  • the display area includes a second anode
  • a second pixel definition layer including a second opening exposing the second anode
  • a second luminescent material is located on the second anode
  • a second cathode, the second cathode is located on the second luminescent material; wherein,
  • the second cathode is electrically insulated from the first cathode.
  • the Bragg film includes a first film and a second film that are alternately stacked.
  • the first film and the second film are of different materials, and the refractive index of the first film is greater than that of the second film.
  • the refractive index of the film is greater than that of the second film.
  • the first thin film is silicon
  • the second thin film is one of silicon oxide, aluminum oxide, and titanium oxide.
  • the first luminescent material is located in the first opening and is electrically connected to the first anode; the dimming layer is located in the first pixel definition layer and the first cathode between.
  • the present application provides a display panel, the display panel including a substrate, a display area and a light-transmitting display area on the substrate;
  • the transparent display area includes:
  • a first pixel definition layer including a first opening exposing the first anode
  • a first luminescent material is located on the first anode
  • a first cathode the first cathode being located on the first luminescent material
  • the dimming layer, the dimming layer is arranged on the first anode.
  • the dimming layer is located between the first anode and the first pixel defining layer, or on the first cathode.
  • the dimming layer includes a light-transmitting opening, and the light-transmitting opening is arranged corresponding to the first opening.
  • the display area includes a second anode
  • a second pixel definition layer including a second opening exposing the second anode
  • a second luminescent material is located on the second anode
  • a second cathode, the second cathode is located on the second luminescent material; wherein,
  • the second cathode is electrically insulated from the first cathode.
  • the dimming layer is a Bragg film.
  • the Bragg film includes alternately laminated first and second films, the first and second films are made of different materials, and the refractive index of the first film is greater than that of the second film.
  • the refractive index of the film is greater than that of the second film.
  • the first thin film is silicon
  • the second thin film is one of silicon oxide, aluminum oxide, and titanium oxide.
  • the first luminescent material is located in the first opening and is electrically connected to the first anode; the dimming layer is located in the first pixel definition layer and the first cathode between.
  • the present application also provides a smart device, which includes a display panel and a light sensing unit located below the display panel, the display panel includes a substrate, and a display area and a light-transmitting display area on the substrate;
  • the transparent display area includes:
  • a first pixel definition layer including a first opening exposing the first anode
  • a first luminescent material is located on the first anode
  • a first cathode the first cathode being located on the first luminescent material
  • the dimming layer, the dimming layer is arranged on the first anode.
  • the dimming layer is a Bragg film.
  • the projection of the light sensing unit on the horizontal plane coincides with the projection of the transparent display area on the horizontal plane.
  • a dimming layer is formed in the light-transmitting display area of the display panel, and the projection area of the dimming layer on the first anode covers the first anode located below the first pixel definition layer. Covering the first anode located under the first opening can eliminate the light reflected by the anode metal, reduce the reflection ability of the metal in the light-transmitting and reflecting area to natural light, and improve the imaging quality of the camera.
  • a dimming layer is formed in the light-transmitting display area of the display panel, and the projection area of the dimming layer on the first anode covers the first anode located below the first pixel definition layer. Covering the first anode located under the first opening can eliminate the light reflected by the anode metal, reduce the reflection ability of the metal in the light-transmitting and reflecting area to natural light, and improve the imaging quality of the camera.
  • FIG. 1 is a schematic structural diagram of a display panel of a smart device in the prior art
  • Figure 2 is a schematic cross-sectional structure view along the AA' direction of Figure 1;
  • 3 to 5 are structural schematic diagrams of display panels in different process steps in a specific embodiment of the application.
  • FIG. 6 is a schematic structural diagram of a display panel in another specific embodiment of the application.
  • FIG. 7 is a schematic structural diagram of a display panel in a third specific embodiment of this application.
  • FIG. 8 is a schematic structural diagram of a Bragg film in a specific embodiment of the application.
  • FIG. 9 is a schematic top view of a transparent display area of a display panel in a specific embodiment of the application.
  • FIG. 5 is a schematic structural diagram of a display panel in a specific embodiment of the application
  • FIG. 9 is a schematic top view of a light-transmitting display area of the display panel in a specific embodiment of the application.
  • the display panel includes a substrate and a display area 10 and a light-transmitting display area 20 located on the substrate.
  • the substrate includes a driving circuit and a planarization layer 170, the planarization layer 170 covers the driving circuit and has a plurality of through holes exposing metal traces in the driving circuit.
  • the driving circuit includes an insulating substrate; an active area located on the insulating substrate, the active area including a channel area and a source area and a drain area located on both sides of the channel area; The gate dielectric layer 130 covering the active region; the gate metal 140 located on the gate dielectric layer 130 and covering the channel region; the interlayer dielectric layer 150 covering the gate metal 140; The interlayer dielectric layer 150 and the source and drain traces 160 electrically connected to the source and drain regions.
  • the insulating substrate includes a substrate 112, a sealing structure 114 on the substrate, and a buffer layer 116 above the sealing structure 114.
  • the light-transmitting display area 20 includes: a first anode 280 located on the planarization layer 170 and electrically connected to the driving circuit through the through hole; a first pixel defining layer 190, The first pixel definition layer 190 covers the planarization layer 170 and the first anode 280, and has a first opening exposing the first anode 280; a first luminescent material 282, where the first luminescent material 282 is located The first anode 280 is electrically connected to the first anode 280; the first cathode 284 is located on the first luminescent material 282; and the dimming layer 286 is 286 is provided on the first anode 280.
  • the display area includes a second anode 180; a second pixel definition layer 190, the second pixel definition layer 190 includes a second opening exposing the second anode 180; a second luminescent material 182, the second The luminescent material 182 is located on the second anode 180; the second cathode 184 is located on the second luminescent material 182; wherein, the second cathode 184 is electrically insulated from the first cathode 284 .
  • the first cathode and the second cathode are metal layers simultaneously formed by a whole-surface evaporation process.
  • the metal layer has a strong light shielding effect, which will affect the light transmittance of the light-transmitting display area.
  • the second cathode 184 is electrically insulated from the first cathode 284, and when the light-emitting surface of the display panel is parallel to the horizontal plane, The projection of the first cathode 284 on the horizontal plane overlaps the projection of the first anode 280 on the horizontal plane.
  • This design reduces the area where the cathode metal of the light-transmitting display area is located, thereby enhancing the light transmittance of this area.
  • a transparent conductive material may be used instead of metal to form the first cathode 284 to further enhance the light transmittance of the light-transmitting display area.
  • the dimming layer 286 includes a light-transmitting opening, and the light-transmitting opening is arranged corresponding to the first opening; when the light-emitting surface of the display panel is parallel to the horizontal plane, the light-transmitting opening is The projection on the horizontal plane overlaps the projection of the first opening on the horizontal plane. Since the dimming layer has an absorbing effect on light, the light-transmitting opening can prevent the dimming layer from affecting the light emitted by the pixel unit.
  • the dimming layer 286 may be located between any two film structures on the second anode 280. As long as the projection area of the dimming layer 286 on the first anode 280 covers the first anode 280 located under the first pixel defining layer 190, and does not cover the first anode 280 located under the first opening, It can reduce and eliminate the reflected light.
  • the dimming layer 286 is located on the first cathode 284.
  • FIG. 6 is a schematic structural diagram of a display panel in another specific embodiment of the application.
  • the dimming layer 286 is located between the first pixel defining layer 190 and the first cathode 284.
  • FIG. 7 is a schematic structural diagram of a display panel in a third specific embodiment of this application.
  • the dimming layer 286 is located between the first anode 280 and the first pixel defining layer 190.
  • the dimming layer 286 is a Bragg film.
  • FIG. 8 is a schematic diagram of the structure of the Bragg film in a specific embodiment of the application.
  • the Bragg reflection structure is a thin film structure composed of a first thin film with a high refractive index and a second thin film with a low refractive index alternately.
  • the first film and the second film have the same thickness, and the thickness ranges from 50 to 150 nm.
  • the Bragg film can effectively eliminate the light reflected by the anode metal, thereby reducing the light reflectivity of the transparent display area.
  • the Bragg film includes a first film 210 and a second film 220 that are alternately stacked, and the first film 210 and the second film 220 have different materials. Specifically, the refractive index of the first film 210 is greater than the refractive index of the second film 220.
  • the first thin film 210 is silicon
  • the second thin film 220 is one of silicon oxide, aluminum oxide, and titanium oxide.
  • FIG. 9 is a schematic top view of a transparent display area of a display panel in a specific embodiment of the application.
  • the transparent display area includes a pixel area 201, an anode 202, a transparent area 203 and an anode wiring 204.
  • anode wiring 204 By adding a Bragg film layer on the anode 202 and the anode wiring 204 outside the pixel area 201, the reflective force of the anode wiring can be effectively eliminated.
  • the number of layers of the first film and the number of layers of the second film are both greater than 3 layers.
  • the projection of the light-transmitting display area 20 on the substrate does not overlap with the driving circuit; wherein, the light-transmitting display area 20 includes connecting wires, and the connecting wires One end of the wire is electrically connected to the driving circuit through the through hole, and the other end is electrically connected to the first anode 280.
  • the present application also provides a manufacturing method of the display panel, which will be described in detail below with reference to the accompanying drawings.
  • the substrate includes a driving circuit and a planarization layer 170.
  • the planarization layer 170 covers the driving circuit and has a plurality of through holes exposing the metal traces in the driving circuit. .
  • the driving circuit includes an insulating substrate; an active area located on the insulating substrate, the active area including a channel area and a source area and a drain area located on both sides of the channel area;
  • the gate dielectric layer 130 covering the active region;
  • the gate metal 140 located on the gate dielectric layer 130 and covering the channel region;
  • the interlayer dielectric layer 150 covering the gate metal 140;
  • the interlayer dielectric layer 150 and the source and drain traces 160 electrically connected to the source and drain regions.
  • a first anode 280 and a second anode 180 on the planarization layer 170 are formed, and the first anode 280 and the second anode 180 are electrically connected to the driving circuit through the through hole.
  • a first pixel definition layer 190 covering the planarization layer 170 and the first anode 280 and a second pixel definition layer 290 covering the planarization layer 170 and the second anode 180 are formed, and the first pixel definition layer 190 has a first opening exposing the first anode 280, and the second pixel definition layer 190 has a second opening exposing the second anode 180;
  • a first luminescent material 282 on the first anode 280 and a second luminescent material 182 on the second anode 180 are formed, the first luminescent material 282 is electrically connected to the first anode 280, and the The second luminescent material 182 is electrically connected to the second anode 180;
  • a first cathode 284 and a second cathode 184 on the first luminescent material 282 are formed.
  • the method further includes forming a dimming layer 286, which is located on the first anode 280, and The projection area of the optical layer 286 on the first anode 280 covers the first anode 280 located under the first pixel defining layer 190 and does not cover the first anode 280 located under the first opening.
  • the dimming layer 286 is a Bragg film.
  • the method further includes forming a second planarization layer 310 covering the first cathode 284 and the second cathode 184 and a packaging structure 320.
  • the dimming layer 286 may be located between any two film structures on the second anode 280. As long as the projection area of the dimming layer 286 on the first anode 280 covers the first anode 280 located under the first pixel defining layer 190, and does not cover the first anode 280 located under the first opening, It can reduce and eliminate the reflected light.
  • the dimming layer 286 is located on the first cathode 284.
  • FIG. 6 is a schematic structural diagram of a display panel in another specific embodiment of the application.
  • the dimming layer 286 is located between the first pixel defining layer 190 and the first cathode 284.
  • FIG. 7 is a schematic structural diagram of a display panel in a third specific embodiment of this application.
  • the dimming layer 286 is located between the first anode 280 and the first pixel defining layer 190.
  • the present application also provides an electronic device, which includes the display panel as described above and a light sensing unit located under the display panel.
  • the projection of the light sensing unit on the horizontal plane coincides with the projection of the transparent display area 20 on the horizontal plane.
  • the light sensing unit is a camera or other light sensing equipment, such as an under-screen fingerprint recognition unit.
  • a dimming layer is formed in the light-transmitting display area of the display panel, and the projection area of the dimming layer on the first anode covers the first anode located below the first pixel definition layer. Covering the first anode located under the first opening can eliminate the light reflected by the anode metal, reduce the reflection ability of the metal in the light-transmitting and reflecting area to natural light, and improve the imaging quality of the camera.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Signal Processing (AREA)
  • Geometry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

本申请提供一种显示面板和智能设备。所述显示面板包括基板和位于所述基板上的显示区和透光显示区；所述透光显示区包括：第一阳极；第一像素定义层，所述第一像素定义层包括有暴露出所述第一阳极的第一开口；第一发光材料，所述第一发光材料位于所述第一阳极上；第一阴极，所述第一阴极位于所述第一发光材料上；和调光层，所述调光层设置在所述第一阳极上。。

Description

显示面板和电子设备 技术领域
本申请涉及电子显示领域，尤其涉及一种显示面板和电子设备。
 背景技术
为了在智能设备中实现真正的全面屏显示，最新的智能设备将摄像头集成在显示面板的下方，位于摄像头上的显示面板能够兼具电子显示和透光功能。如图1和图2所示，以智能手机为例，所述智能手机的显示面板包括摄像区010和操作区012，摄像区010的位置和位于显示面板下方的摄像头011对应。显示面板012包括柔性基板0121、薄膜晶体管层0122、发光层0123、封装层0124、触控层0125以及玻璃盖板0126。
 技术问题
薄膜晶体管层0122中包含大量金属走线，金属走线能够反射自然光，影响摄像头成像品质。因此，需要对这一现象进行改良。
 技术解决方案
本申请提供一种显示面板和电子设备，以消除摄像头上的显示面板对自然光的反射。
为解决上述问题，本申请提供了一种显示面板，所述显示面板包括基板和位于所述基板上的显示区和透光显示区；
所述透光显示区包括：
第一阳极；
第一像素定义层，所述第一像素定义层包括有暴露出所述第一阳极的第一开口；
第一发光材料，所述第一发光材料位于所述第一阳极上；
第一阴极，所述第一阴极位于所述第一发光材料上；和
调光层，所述调光层设置在所述第一阳极上；其中，
所述调光层为布拉格薄膜。
根据本申请的其中一个方面，所述调光层位于所述第一阳极和第一像素定义层之间，或位于所述第一阴极上。
根据本申请的其中一个方面，所述调光层包括透光开口，所述透光开口与所述第一开口对应设置。
根据本申请的其中一个方面，所述显示区包括第二阳极；
第二像素定义层，所述第二像素定义层包括有暴露出所述第二阳极的第二开口；
第二发光材料，所述第二发光材料位于所述第二阳极上；
第二阴极，所述第二阴极位于所述第二发光材料上；其中，
所述第二阴极与所述第一阴极电绝缘。
根据本申请的其中一个方面，所述布拉格薄膜包括交替层叠的第一薄膜和第二薄膜，所述第一薄膜和第二薄膜的材料不同，所述第一薄膜的折射率大于所述第二薄膜的折射率。
根据本申请的其中一个方面，所述第一薄膜为硅，所述第二薄膜为氧化硅、氧化铝和氧化钛中的一种。
根据本申请的其中一个方面，所述第一发光材料位于所述第一开口中，与所述第一阳极电连接；所述调光层位于所述第一像素定义层和所述第一阴极之间。
为解决上述问题，本申请提供了一种显示面板，所述显示面板包括基板和位于所述基板上的显示区和透光显示区；
所述透光显示区包括：
第一阳极；
第一像素定义层，所述第一像素定义层包括有暴露出所述第一阳极的第一开口；
第一发光材料，所述第一发光材料位于所述第一阳极上；
第一阴极，所述第一阴极位于所述第一发光材料上；和
调光层，所述调光层设置在所述第一阳极上。
根据本申请的其中一个方面，所述调光层位于所述第一阳极和第一像素定义层之间，或位于所述第一阴极上。
根据本申请的其中一个方面，所述调光层包括透光开口，所述透光开口与所述第一开口对应设置。
根据本申请的其中一个方面，所述显示区包括第二阳极；
第二像素定义层，所述第二像素定义层包括有暴露出所述第二阳极的第二开口；
第二发光材料，所述第二发光材料位于所述第二阳极上；
第二阴极，所述第二阴极位于所述第二发光材料上；其中，
所述第二阴极与所述第一阴极电绝缘。
根据本申请的其中一个方面，所述调光层为布拉格薄膜。
根据本申请的其中一个方面，所述布拉格薄膜包括交替层叠的第一薄膜和第二薄膜，所述第一薄膜和第二薄膜的材料不同，所述第一薄膜的折射率大于所述第二薄膜的折射率。
根据本申请的其中一个方面，所述第一薄膜为硅，所述第二薄膜为氧化硅、氧化铝和氧化钛中的一种。
根据本申请的其中一个方面，所述第一发光材料位于所述第一开口中，与所述第一阳极电连接；所述调光层位于所述第一像素定义层和所述第一阴极之间。
相应的，本申请还提供了一种智能设备，其包括显示面板和位于所述显示面板下方的光线感应单元，所述显示面板包括基板和位于所述基板上的显示区和透光显示区；
所述透光显示区包括：
第一阳极；
第一像素定义层，所述第一像素定义层包括有暴露出所述第一阳极的第一开口；
第一发光材料，所述第一发光材料位于所述第一阳极上；
第一阴极，所述第一阴极位于所述第一发光材料上；和
调光层，所述调光层设置在所述第一阳极上。
根据本申请的其中一个方面，所述调光层为布拉格薄膜。
根据本申请的其中一个方面，所述光线感应单元在水平面上的投影与所述透光显示区在水平面上的投影重合。
本申请在所述显示面板的透光显示区中形成了调光层，所述调光层在所述第一阳极上的投影区域覆盖位于所述第一像素定义层下方的第一阳极，不覆盖位于所述第一开口下方的第一阳极，从而能够消除被阳极金属反射的光线，减小了透光反射区的金属对自然光的反射能力，提高了摄像头成像品质。
 有益效果
本申请在所述显示面板的透光显示区中形成了调光层，所述调光层在所述第一阳极上的投影区域覆盖位于所述第一像素定义层下方的第一阳极，不覆盖位于所述第一开口下方的第一阳极，从而能够消除被阳极金属反射的光线，减小了透光反射区的金属对自然光的反射能力，提高了摄像头成像品质。
 附图说明
图1为现有技术中的智能设备的显示面板的结构示意图；
图2为图1沿AA’方向的剖面结构示意图；
图3至图5为本申请的一个具体实施例中的处于不同的工艺步骤中的显示面板的结构示意图；
图6为本申请的另一个具体实施例中的显示面板的结构示意图；
图7为本申请的第三个具体实施例中的显示面板的结构示意图；
图8为本申请的一个具体实施例中的布拉格薄膜的结构示意图；
图9为本申请的一个具体实施例中的显示面板的透光显示区的示意性俯视图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
为了消除摄像头上的显示面板对自然光的反射，本申请提供了一种显示面板，下面将结合具体实施例对本申请进行详细说明。参见图5和图9，图5为本申请的一个具体实施例中的显示面板的结构示意图；图9为本申请的一个具体实施例中的显示面板的透光显示区的示意性俯视图。
在本实施例中，所述显示面板包括基板和位于所述基板上的显示区10和透光显示区20。
参见图5，所述基板包括驱动电路和平坦化层170，所述平坦化层170覆盖所述驱动电路，并具有多个暴露所述驱动电路中的金属走线的通孔。具体的，所述驱动电路包括绝缘衬底；位于所述绝缘衬底上的有源区，所述有源区包括沟道区和分别位于所述沟道区两侧的源区和漏区；覆盖所述有源区的栅极介质层130；位于所述栅极介质层130上并覆盖所述沟道区的栅极金属140；覆盖所述栅极金属140的层间介质层150；贯穿所述层间介质层150并与所述源区和漏区电连接的源漏走线160。
所述绝缘衬底包括基板112、位于基板上的密封结构114、以及位于所述密封结构114上方的缓冲层116。
所述透光显示区20包括：第一阳极280，所述第一阳极280位于所述平坦化层170上，并通过所述通孔与所述驱动电路电连接；第一像素定义层190，所述第一像素定义层190覆盖所述平坦化层170和第一阳极280，并具有暴露出所述第一阳极280的第一开口；第一发光材料282，所述第一发光材料282位于所述第一阳极280上，与所述第一阳极280电连接；第一阴极284，所述第一阴极284位于所述第一发光材料282上；和调光层286，所述调光层286设置在所述第一阳极280上。
所述显示区包括第二阳极180；第二像素定义层190，所述第二像素定义层190包括有暴露出所述第二阳极180的第二开口；第二发光材料182，所述第二发光材料182位于所述第二阳极180上；第二阴极184，所述第二阴极184位于所述第二发光材料182上；其中，所述第二阴极184与所述第一阴极284电绝缘。
现有技术中，所述第一阴极和第二阴极为通过整面蒸镀工艺同时形成的金属层。金属层会光线的遮蔽作用较强，会影响透光显示区的透光性。为了克服这一缺陷，如图5所示，本实施例中，设置所述第二阴极184与所述第一阴极284电绝缘，并且，当所述显示面板的出光面与水平面平行时，所述第一阴极284在水平面上的投影与所述第一阳极280在水平面上的投影重叠。
这一设计缩小了透光显示区的阴极金属设置在的区域，从而增强了该区域的透光性。此外，可以采用透明导电材料代替金属形成所述第一阴极284，以进一步增强透光显示区的透光性。
在本实施例中，所述调光层286包括透光开口，所述透光开口与所述第一开口对应设置；当所述显示面板的出光面与水平面平行时，所述透光开口在水平面上的投影与所述第一开口在水平面上的投影重叠。由于调光层对光线有吸收作用，所述透光开口能够避免所述调光层影响像素单元发出的光线。
所述调光层286可以位于所述第二阳极280上的任意两层膜层结构之间。只要所述调光层286在所述第一阳极280上的投影区域覆盖位于所述第一像素定义层190下方的第一阳极280，不覆盖位于所述第一开口下方的第一阳极280，即可实现对反射光线的减弱和消除。
如图5所示，在本实施例中，所述调光层286位于所述第一阴极284上。如图6所示，图6为本申请的另一个具体实施例中的显示面板的结构示意图，所述调光层286位于所述第一像素定义层190和第一阴极284之间。如图7所示，图7为本申请的第三个具体实施例中的显示面板的结构示意图，所述调光层286位于所述第一阳极280和第一像素定义层190之间。
在本实施例中，所述调光层286为布拉格薄膜。参见图8，图8为本申请的一个具体实施例中的布拉格薄膜的结构示意图。布拉格反射结构是由具有高折射率的第一薄膜和具有低折射率的第二薄膜交替组成的薄膜结构。优选的，所述第一薄膜和第二薄膜具有相同的厚度，其厚度范围为50~150nm。布拉格薄膜能够有效的消除被阳极金属反射的光线，从而减小透光显示区的光线反射率。
在本实施例中，所述布拉格薄膜包括交替层叠的第一薄膜210和第二薄膜220，所述第一薄膜210和第二薄膜220的材料不同。具体的，所述第一薄膜210的折射率大于所述第二薄膜220的折射率。
在本实施例中，所述第一薄膜210为硅，所述第二薄膜220为氧化硅、氧化铝和氧化钛中的一种。
图9为本申请的一个具体实施例中的显示面板的透光显示区的示意性俯视图。所述透光显示区包括像素区201、阳极202、透光区203和阳极走线204。通过在像素区201之外的阳极202和阳极走线204上增加一层布拉格膜层，可有效消除阳极走线的反射力。
优选的，在本实施例中，所述第一薄膜的层数和所述第二薄膜的层数均大于3层。
在本申请的另一个实施例中，所述透光显示区20在所述基板上的投影与所述驱动电路不重合；其中，所述透光显示区20包括连接走线，所述连接走线的一端通过所述通孔与所述驱动电路电连接，另一端与所述第一阳极280电连接。
相应的，本申请还提供了一种显示面板的制作方法，下面将结合附图对所述方法进行详细说明。
首先，参见图3，提供基板，所述基板包括驱动电路和平坦化层170，所述平坦化层170覆盖所述驱动电路，并具有多个暴露所述驱动电路中的金属走线的通孔。
具体的，所述驱动电路包括绝缘衬底；位于所述绝缘衬底上的有源区，所述有源区包括沟道区和分别位于所述沟道区两侧的源区和漏区；覆盖所述有源区的栅极介质层130；位于所述栅极介质层130上并覆盖所述沟道区的栅极金属140；覆盖所述栅极金属140的层间介质层150；贯穿所述层间介质层150并与所述源区和漏区电连接的源漏走线160。
之后，形成位于所述平坦化层170上的第一阳极280和第二阳极180，所述第一阳极280和第二阳极180通过所述通孔与所述驱动电路电连接。
之后，形成覆盖所述平坦化层170和第一阳极280的第一像素定义层190和覆盖所述平坦化层170和第二阳极180的第二像素定义层290，所述第一像素定义层190有暴露出所述第一阳极280的第一开口，所述第二像素定义层190有暴露出所述第二阳极180的第二开口；
形成位于所述第一阳极280上的第一发光材料282和位于所述第二阳极180上的第二发光材料182，所述第一发光材料282与所述第一阳极280电连接，所述第二发光材料182与所述第二阳极180电连接；
形成位于所述第一发光材料282上的第一阴极284和第二阴极184。
如图4所示，在形成所述第一阳极280和第二阳极180之后，所述方法还包括形成调光层286，所述调光层286位于所述第一阳极280上，所述调光层286在所述第一阳极280上的投影区域覆盖位于所述第一像素定义层190下方的第一阳极280，不覆盖位于所述第一开口下方的第一阳极280。具体的，所述调光层286为布拉格薄膜。
之后，如图5所示，该方法还包括形成覆盖所述第一阴极284和第二阴极184的第二平坦化层310和封装结构320。
所述调光层286可以位于所述第二阳极280上的任意两层膜层结构之间。只要所述调光层286在所述第一阳极280上的投影区域覆盖位于所述第一像素定义层190下方的第一阳极280，不覆盖位于所述第一开口下方的第一阳极280，即可实现对反射光线的减弱和消除。
如图5所示，在本实施例中，所述调光层286位于所述第一阴极284上。如图6所示，图6为本申请的另一个具体实施例中的显示面板的结构示意图，所述调光层286位于所述第一像素定义层190和第一阴极284之间。如图7所示，图7为本申请的第三个具体实施例中的显示面板的结构示意图，所述调光层286位于所述第一阳极280和第一像素定义层190之间。
相应的，本申请还提供了一种电子设备，其包括如前所述的显示面板和位于所述显示面板下方的光线感应单元。所述光线感应单元在水平面上的投影与所述透光显示区20在水平面上的投影重合。具体的，所述光线感应单元为摄像头或其他光线感应设备，例如屏下指纹识别单元。
本申请在所述显示面板的透光显示区中形成了调光层，所述调光层在所述第一阳极上的投影区域覆盖位于所述第一像素定义层下方的第一阳极，不覆盖位于所述第一开口下方的第一阳极，从而能够消除被阳极金属反射的光线，减小了透光反射区的金属对自然光的反射能力，提高了摄像头成像品质。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种显示面板，其中，所述显示面板包括基板和位于所述基板上的显示区和透光显示区；
    所述透光显示区包括：
    第一阳极；
    第一像素定义层，所述第一像素定义层包括有暴露出所述第一阳极的第一开口；
    第一发光材料，所述第一发光材料位于所述第一阳极上；
    第一阴极，所述第一阴极位于所述第一发光材料上；和
    调光层，所述调光层设置在所述第一阳极上；其中，
    所述调光层为布拉格薄膜。
  2. 根据权利要求1所述的显示面板，其中，所述调光层位于所述第一阳极和第一像素定义层之间，或位于所述第一阴极上。
  3. 根据权利要求1所述的显示面板，其中，所述调光层包括透光开口，所述透光开口与所述第一开口对应设置。
  4. 根据权利要求1所述的显示面板，其中，所述显示区包括第二阳极；
    第二像素定义层，所述第二像素定义层包括有暴露出所述第二阳极的第二开口；
    第二发光材料，所述第二发光材料位于所述第二阳极上；
    第二阴极，所述第二阴极位于所述第二发光材料上；其中，
    所述第二阴极与所述第一阴极电绝缘。
  5. 根据权利要求1所述的显示面板，其中，所述布拉格薄膜包括交替层叠的第一薄膜和第二薄膜，所述第一薄膜和第二薄膜的材料不同，所述第一薄膜的折射率大于所述第二薄膜的折射率。
  6. 根据权利要求5所述的显示面板，其中，所述第一薄膜为硅，所述第二薄膜为氧化硅、氧化铝和氧化钛中的一种。
  7. 根据权利要求1所述的显示面板，其中，所述第一发光材料位于所述第一开口中，与所述第一阳极电连接；所述调光层位于所述第一像素定义层和所述第一阴极之间。
  8. 一种显示面板，其中，所述显示面板包括基板和位于所述基板上的显示区和透光显示区；
    所述透光显示区包括：
    第一阳极；
    第一像素定义层，所述第一像素定义层包括有暴露出所述第一阳极的第一开口；
    第一发光材料，所述第一发光材料位于所述第一阳极上；
    第一阴极，所述第一阴极位于所述第一发光材料上；和
    调光层，所述调光层设置在所述第一阳极上。
  9. 根据权利要求8所述的显示面板，其中，所述调光层位于所述第一阳极和第一像素定义层之间，或位于所述第一阴极上。
  10. 根据权利要求8所述的显示面板，其中，所述调光层包括透光开口，所述透光开口与所述第一开口对应设置。
  11. 根据权利要求8所述的显示面板，其中，所述显示区包括第二阳极；
    第二像素定义层，所述第二像素定义层包括有暴露出所述第二阳极的第二开口；
    第二发光材料，所述第二发光材料位于所述第二阳极上；
    第二阴极，所述第二阴极位于所述第二发光材料上；其中，
    所述第二阴极与所述第一阴极电绝缘。
  12. 根据权利要求8所述的显示面板，其中，所述调光层为布拉格薄膜。
  13. 根据权利要求12所述的显示面板，其中，所述布拉格薄膜包括交替层叠的第一薄膜和第二薄膜，所述第一薄膜和第二薄膜的材料不同，所述第一薄膜的折射率大于所述第二薄膜的折射率。
  14. 根据权利要求13所述的显示面板，其中，所述第一薄膜为硅，所述第二薄膜为氧化硅、氧化铝和氧化钛中的一种。
  15. 根据权利要求8所述的显示面板，其中，所述第一发光材料位于所述第一开口中，与所述第一阳极电连接；所述调光层位于所述第一像素定义层和所述第一阴极之间。
  16. 一种电子设备，其中，所述智能设备包括显示面板和位于所述显示面板下方的光线感应单元，所述显示面板包括基板和位于所述基板上的显示区和透光显示区；
    所述透光显示区包括：
    第一阳极；
    第一像素定义层，所述第一像素定义层包括有暴露出所述第一阳极的第一开口；
    第一发光材料，所述第一发光材料位于所述第一阳极上；
    第一阴极，所述第一阴极位于所述第一发光材料上；和
    调光层，所述调光层设置在所述第一阳极上。
  17. 根据权利要求16所述的电子设备，其中，所述调光层为布拉格薄膜。
  18. 根据权利要求16所述的电子设备，其中，所述光线感应单元在水平面上的投影与所述透光显示区在水平面上的投影重合。
PCT/CN2019/096965 2019-04-17 2019-07-22 显示面板和电子设备 WO2020211206A1 (zh)

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