WO2020218063A1 - 半導体装置、半導体装置の製造方法及びワイヤボンディング装置 - Google Patents
半導体装置、半導体装置の製造方法及びワイヤボンディング装置 Download PDFInfo
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Definitions
- the present invention relates to a semiconductor device, a method for manufacturing a semiconductor device, and a wire bonding device.
- the electrodes provided on the circuit board are electrically connected to the electrodes of the semiconductor chip provided on the circuit board by an extremely thin metal wire.
- Such a connection technique is so-called wire bonding.
- Wedge bonding which is a type of wire bonding, physically and electrically connects the wire to the electrode by applying energy such as heat and ultrasonic waves while the wire is pressed against the electrode.
- Patent Documents 1 and 2 disclose techniques related to wedge bonding.
- the wire is required to maintain an electrical connection between the electrodes connected to both ends of the wire. For example, if the wire is cut or if the wire is detached from the electrode, the electrical connection cannot be maintained. Therefore, the bonded wire is required to have a mechanical strength called pull strength.
- the pull strength is a load that causes a wire to be cut or a wire to be separated from the electrode when a wire having both ends connected to the electrode is pulled.
- an object of the present invention is to provide a semiconductor device having improved pull strength, a method for manufacturing the semiconductor device, and a wire bonding device for manufacturing the semiconductor device.
- the semiconductor device has a first electrode, a second electrode electrically connected to the first electrode, one end bonded to the first electrode, and the other end bonded to the second electrode. It is provided with a bonding wire.
- the bonding wire extends along the surface of the first electrode, and the surface of the first electrode is prevented from contacting the first wire portion that is partially pressed and electrically bonded to the first electrode.
- the second wire portion extending in the direction rising from the second electrode, the third wire portion extending toward the second electrode, and the end portion being pressed and electrically joined to the second electrode, and the second wire portion extending in the extending direction of the first wire portion. It has a first bent portion that bends in the direction in which the wire portion extends, and a second bent portion that bends the direction in which the second wire portion extends in the direction in which the third wire portion extends.
- the bonding wire is provided with a part of the first wire portion, the second wire portion, the first bent portion and the second bent portion between the portion bonded to the first electrode and the portion bonded to the second electrode.
- a bonding wire having a sufficient length is extended between the portion bonded to the first electrode and the portion bonded to the second electrode.
- the bonding wire includes a first bent portion and a second bent portion. Further, the bonding wire has a first wire portion extending along the first electrode. According to these configurations, when pull stress acts on the bonding wire, the load does not act directly on the portion bonded to the first electrode. The load is borne by a part of the first wire portion, the second wire portion, the third wire portion, the first bent portion and the second bent portion. Since these parts are not processed so as to change the cross-sectional shape unlike the parts joined to the first electrode, at least the original strength of the bonding wire is maintained. Therefore, the bonding wire can improve the pull strength.
- the first wire portion may include a joint portion electrically bonded to the first electrode and an extending portion continuous with the joint portion and the second wire portion.
- the length of the extension may be longer than the length of the joint. According to this configuration, the pull strength of the bonding wire can be suitably improved.
- the angle formed by the first direction in which the first wire portion extends and the second direction in which the second wire portion extends may be 90 degrees or less. According to this configuration, the pull strength of the bonding wire can be suitably improved.
- the angle formed by the second direction in which the second wire portion extends and the third direction in which the third wire portion extends may be 90 degrees or less. According to this configuration, the pull strength of the bonding wire can be suitably improved.
- the first bent portion of the above semiconductor device may be a portion where the bonding wire is plastically deformed. According to this configuration, the pull strength of the bonding wire can be suitably improved.
- the second bent portion of the above semiconductor device may be a portion where the bonding wire is plastically deformed. According to this configuration, the pull strength of the bonding wire can be suitably improved.
- Another embodiment of the present invention includes a first electrode, a second electrode electrically connected to the first electrode, and a bonding wire having one end bonded to the first electrode and the other end bonded to the second electrode.
- This is a method for manufacturing a semiconductor device including.
- the method for manufacturing a semiconductor device is to bond one end of a bonding wire to the first electrode using a capillary, and then feed the bonding wire to a position on the second electrode side of the bonding wire and above the bonding portion.
- the fourth step of forming the second bent portion is included.
- the end portion of the bonding wire including the first bent portion and the second bent portion can be formed. Therefore, the pull strength of the bonding wire in the semiconductor device can be improved.
- the first step is a step of raising the capillary while feeding out the bonding wire along the normal direction on the surface of the first electrode, and a direction intersecting the normal direction on the surface of the first electrode.
- a step of moving the capillary while feeding out the bonding wire to the second electrode side may be included. According to these steps, the first wire portion can be reliably formed.
- the third step is a step of raising the capillary while feeding out the bonding wire along the normal direction on the surface of the first electrode, and a direction intersecting the normal direction on the surface of the first electrode.
- a step of moving the capillary while feeding out the bonding wire to the joint portion side may be included. According to these steps, the second wire portion can be reliably formed.
- Another embodiment of the present invention may further include a fifth step of joining the other end of the bonding wire to the second electrode using a capillary after the fourth step.
- the fifth step is a step of raising the capillary while feeding out the bonding wire along the normal direction on the surface of the first electrode, a step of moving the tip of the capillary to a position on the second electrode, and a step of bonding to the second electrode. It may include a step of joining the other end of the wire. According to these steps, a bonding wire for connecting the first electrode to the second electrode can be formed.
- Yet another embodiment of the present invention is a bonding wire having a first electrode, a second electrode electrically connected to the first electrode, one end bonded to the first electrode, and the other end bonded to the second electrode.
- the wire bonding apparatus includes a bonding unit including a capillary configured to be movable, and a control unit that controls the operation of the bonding unit.
- the control unit uses a capillary to bond one end of the bonding wire to the first electrode, and then feeds the bonding wire to a position on the second electrode side of the bonding wire and above the bonding portion, while feeding the tip of the bonding wire.
- the third control signal for moving the tip of the capillary while feeding out the bonding wire to a position on the joint side from the bent portion and above the joint, and by lowering the tip of the capillary toward the first electrode, the first A fourth control signal for forming the two bent portions may be provided to the bonding unit.
- this wire bonding apparatus it is possible to form an end portion of a bonding wire including a first bending portion and a second bending portion. Therefore, the pull strength of the bonding wire in the semiconductor device can be improved.
- the first control signal is a direction that intersects the control signal that raises the capillary while feeding out the bonding wire along the normal direction on the surface of the first electrode and the normal direction on the surface of the first electrode.
- a control signal for moving the capillary while feeding out the bonding wire to the second electrode side may be included. According to this configuration, the first wire portion can be reliably formed.
- the third control signal is a direction that intersects the control signal that raises the capillary while feeding out the bonding wire along the normal direction on the surface of the first electrode and the normal direction on the surface of the first electrode.
- a control signal for moving the capillary while feeding out the bonding wire to the joint portion side may be included. According to this configuration, the second wire portion can be reliably formed.
- control unit may further provide the bonding unit with a fifth control signal for joining the other end of the bonding wire to the second electrode using a capillary.
- the fifth control signal includes a control signal for raising the capillary while feeding out the bonding wire along the normal direction on the surface of the first electrode, a control signal for moving the tip of the capillary to a position on the second electrode, and a second control signal. It may include a control signal for bonding the other end of the bonding wire to the electrode. According to this configuration, a bonding wire for connecting the first electrode to the second electrode can be formed.
- a semiconductor device having improved pull strength a method for manufacturing the semiconductor device, and a wire bonding device for manufacturing the semiconductor device are provided.
- FIG. 1 is a diagram showing a configuration of a wire bonding apparatus.
- FIG. 2 is an enlarged view showing a part of the semiconductor device.
- FIG. 3 is an enlarged view of the end of the wire shown in FIG.
- FIG. 4 is a diagram showing the shape of the wire and the target point of the capillary.
- FIG. 5 is a flow chart showing a main process in a method for manufacturing a semiconductor device.
- the parts (a), (b) and (c) of FIG. 6 are diagrams showing the main steps of the method for manufacturing a semiconductor device.
- Part (a), part (b) and part (c) of FIG. 7 are views showing the main steps following FIG. 6 of the method for manufacturing a semiconductor device.
- (A) and (b) of FIG. 8 are diagrams showing the main steps following FIG.
- FIG. 7 of the method for manufacturing a semiconductor device is a diagram showing a main process following FIG. 8 included in the method for manufacturing a semiconductor device.
- FIG. 10 is an enlarged photograph of the end of the wire according to the embodiment.
- FIG. 11 is an enlarged view showing an end portion of the wire according to the comparative example.
- wire bonding equipment In the wire bonding apparatus 1 shown in FIG. 1, for example, an electrode of a semiconductor element provided on a printed circuit board is electrically connected to an electrode of a printed circuit board or the like by using a metal wire having a small diameter.
- the wire bonding apparatus 1 provides heat, ultrasonic waves, or pressure to the wire to connect the wire to the electrode.
- the wire bonding device 1 includes a transport unit 2, a bonding unit 3, and a control unit 4.
- the transport unit 2 transports the semiconductor device 10 which is a component to be processed to the bonding area.
- the bonding unit 3 includes a moving mechanism 6, a bonding tool 7, and a capillary 8.
- the moving mechanism 6 moves the capillary 8.
- a capillary 8 is detachably provided at the tip of the bonding tool 7.
- the capillary 8 provides heat, ultrasonic waves or pressure to the wire.
- the control unit 4 controls the overall operation of the wire bonding device 1 including the operation of the bonding unit 3.
- the control unit 4 provides some control signals to the bonding unit 3.
- the control signal includes a signal for controlling the position of the capillary 8 with respect to the semiconductor device 10 and a signal for starting and stopping the provision of heat, ultrasonic waves or pressure. The control unit 4 will be described later.
- FIG. 2 shows an enlarged part of the semiconductor device 10 shown in FIG.
- the semiconductor device 10 includes, for example, a circuit board 11 (first electronic component), a semiconductor chip 12 (second electronic component), and a wire 20 (bonding wire).
- the semiconductor chip 12 is fixed to the main surface 11a of the circuit board 11 by a die bond or the like.
- the circuit board 11 has one or more electrode pads 13 (first electrodes).
- the electrode pad 13 is provided on the main surface 11a of the circuit board 11.
- the semiconductor chip 12 also has one or more electrode pads 14 (second electrodes).
- the electrode pad 14 is provided on the main surface 12a of the semiconductor chip 12.
- the wire 20 electrically connects the electrode pad 13 to the electrode pad 14.
- the wire 20 is formed of gold (Au), silver (Ag), aluminum (Al), copper (Cu) and alloys thereof.
- the diameter of the wire 20 is 20 micrometers as an example.
- One end 21 (one end) of the wire 20 is physically and electrically connected to the electrode pad 13 of the circuit board 11.
- the other end 22 (the other end) of the wire 20 is physically and electrically connected to the electrode pad 14 of the semiconductor chip 12.
- FIG. 3 schematically shows an enlarged end 21 of the wire 20.
- the one-piece wire 20 includes several parts based on its shape and mechanical properties.
- the wire 20 includes a first wire portion 24, a second wire portion 26, a third wire portion 27, a first bent portion 28, and a second bent portion 29.
- the first wire portion 24 extends along the surface of the electrode pad 13. A part of the first wire portion 24 is pressed. The pressed portion is electrically connected to the electrode pad 13.
- the first wire portion 24 includes a bonding portion 24a (joining portion) electrically connected to the electrode pad 13 and an extending portion 24b continuous from the bonding portion 24a to the second wire portion 26.
- the bonding portion 24a is physically and electrically connected to the electrode pad 13.
- the term "physically connected” as used herein means that the wire 20 is joined to the electrode pad 13.
- the bonding portion 24a may be defined as a portion that generates a resistance force (reaction force) against a tensile force.
- electrically connected means a state in which the electric resistance between the wire 20 and the electrode pad 13 is extremely small.
- the bonding portion 24a is formed by so-called wedge bonding.
- wedge bonding the capillary 8 presses the wire 20 against the electrode pad 13.
- the capillary 8 provides energy (heat, ultrasonic waves, etc.) to the wire 20.
- the pressed portion is crushed and deformed into a flat shape.
- the wire 20 is crimped to the electrode pad 13. That is, the bonding portion 24a may be defined as a portion having a thickness smaller than the diameter of the wire 20.
- the extending portion 24b is a part of the first wire portion 24.
- the extending portion 24b extends continuously from the bonding portion 24a.
- the extending portion 24b maintains the cross-sectional shape of the wire 20.
- the cross-sectional shape of the extending portion 24b is substantially circular.
- the extending portion 24b extends along the main surface 13a of the electrode pad 13.
- the length of the extending portion 24b may be, for example, the same as the diameter of the tip of the capillary 8. Further, the length of the extending portion 24b may be larger than the diameter of the tip of the capillary 8, for example.
- the extending portion 24b differs from the bonding portion 24a in that it does not need to be physically and electrically connected to the electrode pad 13.
- the extending portion 24b may be in contact with the electrode pad 13. According to this state, the extending portion 24b is electrically connected to the electrode pad 13. On the other hand, the extending portion 24b cannot resist the tensile force of the main surface 13a in the normal direction. Therefore, it cannot be said that they are physically connected.
- the state of the extending portion 24b does not exclude the state of being physically connected to the electrode pad 13. That is, the extending portion 24b may be physically connected to the electrode pad 13.
- the extending portion 24b may not be in contact with the electrode pad 13, and the extending portion 24b may be slightly separated from the main surface 13a of the electrode pad 13. According to the separated state, the extending portion 24b is not electrically connected to the electrode pad 13. Further, according to the separated state, the extending portion 24b is not physically connected.
- the second wire portion 26 is continuous with the extending portion 24b of the first wire portion 24 via the first bending portion 28 described later.
- the second wire portion 26 extends in the direction D2 intersecting the main surface 13a of the electrode pad 13.
- the second wire portion 26 may be defined as extending in the normal direction of the main surface 13a. That is, the second wire portion 26 is a part of the wire 20 that stands up from the main surface 13a.
- the angle A1 formed by the direction D2 (second direction) in which the second wire portion 26 extends and the direction D1 (first direction) in which the extending portion 24b of the first wire portion 24 extends is equal to or less than a right angle (90 degrees or less). You can.
- the angle A1 formed by the directions D1 and D2 is an acute angle.
- the angle A1 may be 20 degrees or more and 60 degrees or less as an example. That is, the direction D2 in which the second wire portion 26 extends includes a component in the normal direction of the main surface 13a and a component in the direction opposite to the direction D1 in which the extending portion 24b of the first wire portion 24 extends. Therefore, the direction D2 in which the second wire portion 26 extends is inclined with respect to the normal direction of the main surface 13a.
- the angle formed by the directions D1 and D2 is larger than 0 degrees. That is, the direction D2 is not parallel to the direction D1.
- the second wire portion 26 does not come into contact with the extending portion 24b of the first wire portion 24.
- the length of the second wire portion 26 may be, for example, about the same as the extending portion 24b of the first wire portion 24.
- the second wire portion 26 maintains the cross-sectional shape of the wire 20 in the same manner as the extending portion 24b of the first wire portion 24.
- the cross-sectional shape of the second wire portion 26 is substantially circular.
- the third wire portion 27 is continuous with the second wire portion 26 via the second bending portion 29 described later.
- the end of the third wire portion 27 is connected to the electrode pad 14 of the semiconductor chip 12. Therefore, the length of the third wire portion 27 is substantially the same as the distance from the electrode pad 13 to the electrode pad 14.
- the shape of the third wire portion 27 is an arc. Therefore, the shape of the third wire portion 27 is longer than the linear distance from the electrode pad 13 to the electrode pad 14.
- the third wire portion 27 extends from the electrode pad 13 of the circuit board 11 toward the electrode pad 14 of the semiconductor chip 12.
- the angle A2 formed by the extending direction D2 of the second wire portion 26 and the extending direction D3 (third direction) of the third wire portion 27 is larger than a right angle (90 degrees or more).
- the angle A2 is an obtuse angle.
- the angle A2 may be 90 degrees or more and 120 degrees or less as an example.
- the third wire portion 27 maintains the cross-sectional shape of the wire 20 in the same manner as the extending portion 24b of the first wire portion 24, except for the end portion connected to the electrode pad 14.
- the cross-sectional shape of the third wire portion 27 is substantially circular.
- the first bent portion 28 is provided between the first wire portion 24 and the second wire portion 26. That is, the first bent portion 28 changes the direction D1 in which the extending portion 24b of the first wire portion 24 extends to the direction D2 in which the second wire portion 26 extends.
- the shape of the first bent portion 28 is an arc.
- the first bent portion 28 is a part of the bent wire 20. Details of the bending process for forming the first bent portion 28 will be described later. This bending process causes the wire 20 to undergo plastic deformation. According to the plastic deformation, work hardening occurs in the first bent portion 28. Therefore, the strength of the first bent portion 28 may be higher than the strength of the wire 20 in the first place.
- the second bent portion 29 is provided between the second wire portion 26 and the third wire portion 27. That is, the second bent portion 29 changes the direction D2 in which the second wire portion 26 extends to the direction D3 in which the third wire portion 27 extends.
- the shape of the second bent portion 29 is an arc like the first bent portion 28.
- the second bent portion 29 is a part of the bent wire 20. Details of the bending process for forming the second bent portion 29 will be described later. Therefore, similarly to the first bent portion 28, the second bent portion 29 is a portion where plastic deformation has occurred, and work hardening has occurred.
- the semiconductor device 10 described above is manufactured by the wire bonding device 1.
- the control operation of the control unit 4 in the wire bonding apparatus 1 will be described with reference to FIGS. 3, 4, 5, and 6. Further, a method of manufacturing the semiconductor device 10 will be described.
- FIG. 4 shows the shape of the wire 20 and the target point of the capillary 9.
- the control unit 4 has information on preset first target points P1 to ninth target points P9 (see FIG. 9 for the ninth target point).
- the control unit 4 provides a control signal to the bonding unit 3 so that the capillary 8 sequentially moves to the first target point P1 to the ninth target point P9.
- the control unit 4 also provides the bonding unit 3 with a control signal for controlling the permission of the wire 20 to be fed and the stop of the wire 20 during movement.
- the control unit 4 also provides the bonding unit 3 with a control signal for controlling permission and stop of provision of ultrasonic waves and the like from the capillary 8.
- the first target point P1 indicates a position where the wire 20 is bonded to the electrode pad 13.
- the first target point P1 is a position where the bonding portion 24a is formed.
- the first target point P1 is set on the main surface 13a of the electrode pad 13. More specifically, the distance from the main surface 13a to the first target point P1 is equal to or slightly smaller than the diameter of the wire 20.
- the second target point P2 is a position for forming a part of the extending portion 24b.
- the second target point P2 is set directly above the first target point P1.
- the direction away from the main surface 13a along the normal line of the main surface 13a is referred to as "upward”. Further, the direction of approaching the main surface 13a along the normal line is referred to as "downward”.
- the second target point P2 is set on the normal line of the main surface 13a passing through the first target point P1.
- the distance from the main surface 13a to the second target point P2 is larger than the distance from the main surface 13a to the first target point P1.
- the distance from the first target point P1 to the second target point P2 may be determined based on, for example, the length of the extending portion 24b.
- the third target point P3 is also a position for forming a part of the extending portion 24b.
- the third target point P3 is set at a position separated from the second target point P2 along an axis orthogonal to the normal line.
- the axis orthogonal to the normal with respect to the second target point P2 is referred to as a "parallel axis".
- the direction from the electrode pad 13 to the electrode pad 14 along the parallel axis is referred to as "forward direction”.
- the direction from the electrode pad 14 to the electrode pad 13 along the parallel axis is called "reverse direction”. That is, the third target point P3 is set at a position separated from the second target point P2 by a predetermined distance in the forward direction.
- the distance from the second target point P2 to the third target point P3 may be determined based on, for example, the length of the extending portion 24b. That is, the distance from the second target point P2 to the third target point P3 may be the same as the distance from the first target point P1 to the second target point P2, may be large, or may be short. Good.
- the fourth target point P4 is a position for forming the first bent portion 28.
- the fourth target point P4 is set so as to be separated downward from the third target point P3. Therefore, the movement from the third target point P3 to the fourth target point P4 is a downward movement.
- the fourth target point P4 is closer to the electrode pad 14 than the first target point P1.
- the fourth target point P4 may be included in the main surface 13a, or may be separated from the main surface 13a by a predetermined distance.
- the distance from the main surface 13a to the fourth target point P4 may be irrelevant to the distance from the main surface 13a to the first target point P1. That is, the distance from the main surface 13a to the fourth target point P4 may be the same as the distance from the main surface 13a to the first target point P1.
- the distance from the main surface 13a to the fourth target point P4 may be smaller than the distance from the main surface 13a to the first target point P1.
- the distance from the third target point P3 to the fourth target point P4 may be determined based on, for example, the length of the second wire portion 26.
- the fifth target point P5 is a position for forming the second wire portion 26.
- the fifth target point P5 is located above the fourth target point P4. Therefore, in the normal direction, the third target point P3, the fourth target point P4, and the fifth target point P5 are set on the same line. That is, the movement from the fourth target point P4 to the fifth target point P5 is an upward movement. Further, the fifth target point P5 is set above the fourth target point P4. For example, the distance from the main surface 13a to the fifth target point P5 is larger than the distance from the main surface 13a to the fourth target point P4. On the other hand, the part (b) of FIG.
- the distance from the main surface 13a to the fifth target point P5 is smaller than the distance from the main surface 13a to the third target point P3.
- the distance from the main surface 13a to the fifth target point P5 may be the same as the distance from the main surface 13a to the third target point P3.
- the distance from the main surface 13a to the fifth target point P5 may be larger than the distance from the main surface 13a to the third target point P3.
- the distance from the fourth target point P4 to the fifth target point P5 may be determined based on, for example, the length of the second wire portion 26.
- the sixth target point P6 is also a position for forming the second wire portion 26.
- the sixth target point P6 is separated from the fifth target point P5 in the opposite direction. That is, the movement from the fifth target point P5 to the sixth target point P6 is a movement in the opposite direction.
- the distance from the fifth target point P5 to the sixth target point P6 is from the fifth target point P5 to the first target point P1 or the second target point P2 in the horizontal direction. The case where it is larger than the distance is illustrated.
- the distance from the fifth target point P5 to the sixth target point P6 may be the same as the distance along the parallel axis from the fifth target point P5 to the first target point P1 or the second target point P2.
- the distance from the fifth target point P5 to the sixth target point P6 may be smaller than the distance along the parallel axis from the fifth target point P5 to the first target point P1 or the second target point P2.
- the distance from the fifth target point P5 to the sixth target point P6 may be determined based on, for example, the length of the second wire portion 26.
- the seventh target point P7 is a position for forming the second bent portion 29.
- the seventh target point P7 is set so as to be separated downward from the sixth target point P6. That is, the seventh target point P7 is closer to the electrode pad 13 than the sixth target point P6. That is, the movement from the 6th target point P6 to the 7th target point P7 is a downward movement.
- the distance from the main surface 13a to the seventh target point P7 is smaller than the distance from the main surface 13a to the sixth target point P6.
- the distance from the sixth target point P6 to the seventh target point P7 may be determined based on the amount of movement required to cause the wire 20 to undergo plastic deformation.
- the amount of movement required to cause the wire 20 to undergo plastic deformation may be determined, for example, based on the diameter of the wire 20.
- the distance from the sixth target point P6 to the seventh target point P7 may be about 1.5 times the diameter of the wire 20.
- the eighth target point P8 is a position for forming the third wire portion 27.
- the eighth target point P8 is located above the seventh target point P7. Therefore, in the normal direction, the sixth target point P6, the seventh target point P7, and the eighth target point P8 are set on the same line. That is, the movement from the 7th target point P7 to the 8th target point P8 is an upward movement. Further, the eighth target point P8 is set above the seventh target point P7.
- the distance from the main surface 13a to the eighth target point P8 is larger than the distance from the main surface 13a to the seventh target point P7.
- the distance from the 7th target point P7 to the 8th target point P8 may be determined based on, for example, the length of the third wire portion 27.
- the ninth target point P9 (see FIG. 9) is also a position for forming the third wire portion 27.
- the ninth target point P9 is set on the semiconductor chip 12. More specifically, it is set on the electrode pad 14 of the semiconductor chip 12. Therefore, the movement from the 8th target point P8 to the 9th target point P9 is a movement in the forward direction.
- the control unit 4 provides the first control signal to the bonding unit 3 (see step S10 in FIG. 5, parts (a), parts (b), and parts (c) in FIG. 6).
- the first control signal includes an operation of moving the capillary 8 to the first target point P1, an operation of radiating ultrasonic waves from the capillary 8 for a predetermined period (step S11), and an operation of moving the capillary 8 to the second target point P2. (Step S12), an operation of moving the capillary 8 to the third target point P3 (step S13), and an operation of permitting the feeding of the wire 20 are included.
- the bonding unit 3 that has received the first control signal first moves the capillary 8 to the first target point P1. At this time, the tip of the capillary 8 presses the wire 20 against the electrode pad 13. Next, the bonding unit 3 radiates ultrasonic waves from the tip of the capillary 8 for a predetermined period of time. Then, a part of the wire 20 pressed against the tip of the capillary 8 is deformed into a flat shape. By this deformation, the wire 20 is joined to the electrode pad 13. As a result, the bonding portion 24a is formed.
- the bonding unit 3 moves the capillary 8 from the first target point P1 to the second target point P2 (see step S12, part (b) of FIG. 6). Further, the bonding unit 3 allows the wire 20 to be fed out from the capillary 8. That is, the bonding unit 3 moves the capillary 8 from the first target point P1 to the second target point P2 while feeding out the wire 20.
- the wire 20 unwound here constitutes the extending portion 24b.
- the bonding unit 3 moves the capillary 8 from the second target point P2 to the third target point P3 (see step S13, part (c) of FIG. 6). Further, the bonding unit 3 allows the wire 20 to be fed out from the capillary 8. That is, the bonding unit 3 moves the capillary 8 from the second target point P2 to the third target point P3 while feeding out the wire 20.
- the wire 20 unwound here also constitutes the extending portion 24b.
- the capillary 8 can be moved from the first target point P1 to the third target point P3.
- the capillary 8 may be moved directly from the first target point P1 to the third target point P3.
- the capillary 8 does not have to go through the second target point P2.
- the capillary 8 may be moved along the trajectory of a straight line connecting the first target point P1 and the third target point P3.
- the capillary 8 may be moved along the locus of an arc passing through the first target point P1 and the third target point P3.
- the control unit 4 provides the second control signal to the bonding unit 3 (see step S20 in FIG. 5 and part (a) in FIG. 7).
- the second control signal includes an operation of moving the capillary 8 to the fourth target point P4.
- the bonding unit 3 that has received the second control signal lowers the capillary 8 from the third target point P3 to the fourth target point P4 (step S20). At this time, the bonding unit 3 may prohibit the feeding of the wire 20 from the capillary 8. At this time, a part of the wire 20 existing in the capillary 8 and another part of the wire 20 unwound from the capillary 8 in steps S12 and S13 are continuous with a predetermined bending angle. Specifically, a part of the wire 20 existing inside the capillary 8 coincides with the normal direction of the main surface 13a. On the other hand, another portion of the wire 20 drawn out from the capillary 8 is inclined with respect to the normal direction.
- another portion of the wire 20 may be along a virtual line connecting the first target point P1 and the third target point P3. Therefore, the connecting portion between one portion of the wire 20 and another portion of the wire 20 is bent. This connecting portion is formed at the tip portion of the capillary 8.
- the lowering of the capillary 8 by the second control signal is a step of adding a "habit" to the wire 20.
- the portion including the "habit” added by the lowering of the capillary 8 by the second control signal is the first bent portion 28 in the present embodiment.
- the control unit 4 provides a third control signal to the bonding unit 3 (see steps S30 in FIG. 5 and parts (b) and (c) in FIG. 7).
- the third control signal includes an operation of moving the capillary 8 to the fifth target point P5 (step S31), an operation of moving the capillary 8 to the sixth target point P6 (step S32), and an operation of permitting the wire 20 to be fed out. And, including.
- the bonding unit 3 that has received the third control signal moves the capillary 8 from the fourth target point P4 to the fifth target point P5 (see step S31, part (b) of FIG. 7). Further, the bonding unit 3 allows the wire 20 to be fed out from the capillary 8. That is, the bonding unit 3 moves the capillary 8 from the fourth target point P4 to the fifth target point P5 while feeding out the wire 20.
- the wire 20 unwound here constitutes the second wire portion 26.
- the bonding unit 3 moves the capillary 8 from the fifth target point P5 to the sixth target point P6 (see step S32, part (c) of FIG. 7). Further, the bonding unit 3 allows the wire 20 to be fed out from the capillary 8. That is, the bonding unit 3 moves the capillary 8 from the fifth target point P5 to the sixth target point P6 while feeding out the wire 20.
- the wire 20 unwound here also constitutes the second wire portion 26.
- step S30 it suffices if the capillary 8 can be moved from the fourth target point P4 to the sixth target point P6.
- the capillary 8 may be moved directly from the fourth target point P4 to the sixth target point P6.
- the capillary 8 does not have to go through the fifth target point P5.
- the capillary 8 may be moved along the trajectory of a straight line connecting the fourth target point P4 and the sixth target point P6.
- the control unit 4 provides a fourth control signal to the bonding unit 3 (see step S40 in FIG. 5 and part (a) in FIG. 8).
- the fourth control signal includes an operation of moving the capillary 8 to the seventh target point P7.
- the bonding unit 3 that has received the fourth control signal lowers the capillary 8 from the sixth target point P6 to the seventh target point P7 (step S40).
- the bonding unit 3 may prohibit the feeding of the wire 20 from the capillary 8.
- a part of the wire 20 existing in the capillary 8 and another part of the wire 20 unwound from the capillary 8 in the step S30 are continuous with a predetermined bending angle. That is, the relationship between the part of the wire 20 and the unwound portion is similar to the relationship described in step S20.
- the angle of the connecting portion between the part of the wire 20 and the drawn portion becomes smaller.
- the portion where the plastic deformation is caused can also be referred to as a portion having a “habit” as in the steps S12 and S13. Therefore, a bent shape is maintained between a part of the wire 20 and the unwound part. As a result, a second bent portion 29 is formed between a part of the wire 20 and the drawn portion.
- the control unit 4 provides a fifth control signal to the bonding unit 3 (see step S50 in FIG. 5 and part (b) and FIG. 9 in FIG. 8).
- the fifth control signal includes an operation of moving the capillary 8 to the eighth target point P8 (process S51), an operation of moving the capillary 8 to the ninth target point P9 (process S52), and an operation of permitting the wire 20 to be fed out. And the operation of radiating ultrasonic waves from the capillary 8 for a predetermined period (step S53).
- the bonding unit 3 that has received the fifth control signal moves the capillary 8 from the seventh target point P7 to the eighth target point P8 (see step S51, part (b) of FIG. 8). Further, the bonding unit 3 allows the wire 20 to be fed out from the capillary 8. That is, the bonding unit 3 raises the capillary 8 from the seventh target point P7 to the eighth target point P8 while feeding out the wire 20.
- the wire 20 unwound here constitutes a part of the third wire portion 27.
- the bonding unit 3 moves the capillary 8 from the 8th target point P8 to the 9th target point P9 (see step S52, FIG. 9). Further, the bonding unit 3 allows the wire 20 to be fed out from the capillary 8. That is, the bonding unit 3 moves the capillary 8 from the eighth target point P8 to the ninth target point P9 while feeding out the wire 20.
- the wire 20 unwound here also constitutes another part of the second wire portion 26.
- the bonding unit 3 radiates ultrasonic waves from the tip of the capillary 8 for a predetermined period (see step S52, FIG. 9). Then, a part of the wire 20 pressed against the tip of the capillary 8 is deformed into a flat shape. Due to this deformation, the wire 20 is joined to the electrode pad 14.
- the pull strength can be improved.
- the effects of the semiconductor device 10 of the present embodiment will be described while comparing with the semiconductor device 110 of the comparative example.
- FIG. 11 shows the end of the wire 120 included in the semiconductor device 110 of the comparative example.
- the wire 120 has a bonding portion 123 connected to the electrode pad 113 and a wire portion 124 extending toward another electrode pad. That is, the wire 120 does not have a portion corresponding to the first wire portion 24, the second wire portion 26, the third wire portion 27, the first bent portion 28, and the second bent portion 29.
- the load acts on a portion (so-called neck 125) extending diagonally upward from the bonding portion 123. Since the neck 125 includes a part of the bonding portion 123, its thickness is thin. Therefore, the strength at the neck 125 is lower than the strength of the wire 120.
- an extending portion 24b, a second wire portion 26, a first bent portion 28, and a second bent portion 29 are provided between the bonding portion 24a and the third wire portion 27. ing. That is, a wire having a sufficient length is fed out between the bonding portion 24a and the third wire portion 27.
- the wire 20 includes a first bent portion 28 and a second bent portion 29 that have undergone work hardening. Further, the wire 20 has an extending portion 24b extending from the bonding portion 24a along the electrode pad 13. According to these configurations, when pull stress acts on the wire 20, no load acts directly on the connecting portion between the bonding portion 24a and the extending portion 24b.
- the load is borne by the wire drawn out between the bonding portion 24a and the third wire portion 27, and the first bent portion 28 and the second bent portion 29 that have undergone work hardening. Since these portions are not processed so as to change the cross-sectional shape unlike the bonding portion 24a, at least the original strength of the wire 20 is maintained. Further, the strength of the first bent portion 28 and the second bent portion 29 at these portions may be further increased by work hardening. Therefore, the wire 20 can improve the pull strength.
- a wire having a diameter of 20 micrometers was stretched between the electrode pads in a shape as shown in FIG.
- Wires were prepared for gold, silver, aluminum and copper respectively.
- the minimum value of the pull strength was 1.0 gf.
- the same wire was stretched between the electrode pads using the manufacturing method according to the embodiment.
- FIG. 10 shows an example thereof.
- the minimum pull strength was 2.5 gf. That is, it was found that when the wire bonding apparatus 1 according to the embodiment is used to perform wire bonding according to the manufacturing method according to the embodiment, the pull strength can be improved by about 2.5 times.
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Abstract
Description
図1に示すワイヤボンディング装置1は、例えば、プリント基板などの電極に、当該プリント基板に設けられた半導体素子の電極を細径の金属ワイヤを用いて電気的に接続する。ワイヤボンディング装置1は、ワイヤに対して熱、超音波又は圧力を提供してワイヤを電極に接続する。ワイヤボンディング装置1は、搬送ユニット2と、ボンディングユニット3と、制御ユニット4と、を有する。
図2は、図1に示された半導体装置10の一部を拡大して示す。半導体装置10は、例えば、回路基板11(第1電子部品)と、半導体チップ12(第2電子部品)と、ワイヤ20(ボンディングワイヤ)と、を有する。半導体チップ12は、回路基板11の主面11aに対してダイボンドなどにより固定されている。回路基板11は、一又は複数の電極パッド13(第1電極)を有する。電極パッド13は、回路基板11の主面11aに設けられている。また、半導体チップ12も、一又は複数の電極パッド14(第2電極)を有する。電極パッド14は、半導体チップ12の主面12aに設けられている。
上述した半導体装置10は、ワイヤボンディング装置1によって製造される。以下、図3、図4、図5及び図6を参照しながら、ワイヤボンディング装置1における制御ユニット4の制御動作を説明する。さらに、半導体装置10の製造方法を説明する。
制御ユニット4は、第1制御信号をボンディングユニット3に提供する(図5の工程S10、図6の(a)部、同(b)部及び同(c)部参照)。第1制御信号は、キャピラリ8を第1目標点P1に移動させる動作と、キャピラリ8から所定期間だけ超音波を放射させる動作(工程S11)と、キャピラリ8を第2目標点P2に移動させる動作(工程S12)と、キャピラリ8を第3目標点P3に移動させる動作(工程S13)と、ワイヤ20の繰り出しを許可する動作と、を含む。
制御ユニット4は、第2制御信号をボンディングユニット3に提供する(図5の工程S20及び図7の(a)部参照)。第2制御信号は、キャピラリ8を第4目標点P4に移動させる動作を含む。
制御ユニット4は、第3制御信号をボンディングユニット3に提供する(図5の工程S30及び図7の(b)部及び(c)部参照)。第3制御信号は、キャピラリ8を第5目標点P5に移動させる動作(工程S31)と、キャピラリ8を第6目標点P6に移動させる動作(工程S32)と、ワイヤ20の繰り出しを許可する動作と、を含む。
制御ユニット4は、第4制御信号をボンディングユニット3に提供する(図5の工程S40及び図8の(a)部参照)。第4制御信号は、キャピラリ8を第7目標点P7に移動させる動作を含む。
制御ユニット4は、第5制御信号をボンディングユニット3に提供する(図5の工程S50及び図8の(b)部及び図9参照)。第5制御信号は、キャピラリ8を第8目標点P8に移動させる動作(工程S51)と、キャピラリ8を第9目標点P9に移動させる動作(工程S52)と、ワイヤ20の繰り出しを許可する動作と、キャピラリ8から所定期間だけ超音波を放射させる動作(工程S53)と、を含む。
Claims (16)
- 第1電極と、
前記第1電極と電気的に接続される第2電極と、
一端が前記第1電極に接合され、他端が前記第2電極に接合されたボンディングワイヤと、を備え、
前記ボンディングワイヤは、
前記第1電極の表面に沿って延び、一部が押圧されて前記第1電極と電気的に接合した第1ワイヤ部と、
前記第1ワイヤ部に接触しないように、前記第1電極の表面から立ち上がる方向に延びる第2ワイヤ部と、
前記第2電極に向けて延び、端部が押圧されて前記第2電極と電気的に接合した第3ワイヤ部と、
前記第1ワイヤ部が延びる方向を前記第2ワイヤ部が延びる方向に曲げる第1曲げ部と、
前記第2ワイヤ部が延びる方向を前記第3ワイヤ部が延びる方向に曲げる第2曲げ部と、を有する、半導体装置。 - 前記第1ワイヤ部は、前記第1電極と電気的に接合した接合部と、前記接合部と前記第2ワイヤ部とに連続する延在部と、を含み、
前記延在部の長さは、前記接合部の長さよりも長い、請求項1に記載の半導体装置。 - 前記第1曲げ部において、前記第1ワイヤ部が延びる第1方向と前記第2ワイヤ部が延びる第2方向とのなす角度は、90度以下である、請求項1又は2に記載の半導体装置。
- 前記第2曲げ部において、前記第2ワイヤ部が延びる第2方向と前記第3ワイヤ部が延びる第3方向とのなす角度は、90度以上である、請求項1に記載の半導体装置。
- 前記第1曲げ部は、前記ボンディングワイヤが塑性変形した部分である、請求項1に記載の半導体装置。
- 前記第1曲げ部は、前記ボンディングワイヤが塑性変形した部分である、請求項3に記載の半導体装置。
- 前記第2曲げ部は、前記ボンディングワイヤが塑性変形した部分である、請求項1に記載の半導体装置。
- 前記第2曲げ部は、前記ボンディングワイヤが塑性変形した部分である、請求項4に記載の半導体装置。
- 第1電極と、前記第1電極と電気的に接続される第2電極と、一端が前記第1電極に接合され、他端が前記第2電極に接合されたボンディングワイヤと、を備える半導体装置の製造方法であって、
キャピラリを用いて、前記第1電極に前記ボンディングワイヤの一端を接合した後に、前記ボンディングワイヤの接合部よりも前記第2電極側であって前記接合部より上方の位置に前記ボンディングワイヤを繰り出しながら前記キャピラリの先端を移動させる第1工程と、
前記第1電極に向けて前記キャピラリの先端を下降させて前記ボンディングワイヤの一部を前記第1電極に押し付けることにより、第1曲げ部を形成する第2工程と、
前記第1曲げ部より前記接合部側であって前記接合部より上方の位置に前記ボンディングワイヤを繰り出しながら前記キャピラリの先端を移動させる第3工程と、
前記第1電極に向けて前記キャピラリの先端を下降させることにより、第2曲げ部を形成する第4工程と、を含む、半導体装置の製造方法。 - 前記第1工程は、
前記第1電極の表面における法線方向に沿って前記ボンディングワイヤを繰り出しながら前記キャピラリを上昇させる工程と、
前記第1電極の表面における法線方向と交差する方向に沿って、前記第2電極側に前記ボンディングワイヤを繰り出しながら前記キャピラリを移動させる工程と、を含む請求項9に記載の半導体装置の製造方法。 - 前記第3工程は、
前記第1電極の表面における法線方向に沿って前記ボンディングワイヤを繰り出しながら前記キャピラリを上昇させる工程と、
前記第1電極の表面における法線方向と交差する方向に沿って、前記接合部側に前記ボンディングワイヤを繰り出しながら前記キャピラリを移動させる工程と、を含む請求項9又は10に記載の半導体装置の製造方法。 - 前記第4工程の後に、前記キャピラリを用いて、前記第2電極に前記ボンディングワイヤの他端を接合する第5工程をさらに有し、
前記第5工程は、
前記第1電極の表面における法線方向に沿って前記ボンディングワイヤを繰り出しながら前記キャピラリを上昇させる工程と、
前記第2電極上の位置に前記キャピラリの先端を移動させる工程と、
前記第2電極に前記ボンディングワイヤの他端を接合する工程と、を含む、請求項9又は10に記載の半導体装置の製造方法。 - 第1電極と、前記第1電極と電気的に接続される第2電極と、一端が前記第1電極に接合され、他端が前記第2電極に接合されたボンディングワイヤと、を備える半導体装置を製造するワイヤボンディング装置であって、
移動可能に構成されたキャピラリを含むボンディングユニットと、
前記ボンディングユニットの動作を制御する制御ユニットと、を備え、
前記制御ユニットは、
前記キャピラリを用いて、前記第1電極に前記ボンディングワイヤの一端を接合した後に、前記ボンディングワイヤの接合部より前記第2電極側であって前記接合部より上方の位置に前記ボンディングワイヤを繰り出しながら前記キャピラリの先端を移動させる第1制御信号と、
前記第1電極に向けて前記キャピラリの先端を下降させて前記ボンディングワイヤの一部を前記第1電極に押し付けることにより、第1曲げ部を形成させる第2制御信号と、
前記第1曲げ部より前記接合部側であって前記接合部より上方の位置に前記ボンディングワイヤを繰り出しながら前記キャピラリの先端を移動させる第3制御信号と、
前記第1電極に向けて前記キャピラリの先端を下降させることにより、第2曲げ部を形成させる第4制御信号と、を前記ボンディングユニットに提供する、ワイヤボンディング装置。 - 前記第1制御信号は、
前記第1電極の表面における法線方向に沿って前記ボンディングワイヤを繰り出しながら前記キャピラリを上昇させる制御信号と、
前記第1電極の表面における法線方向と交差する方向に沿って、前記第2電極側に前記ボンディングワイヤを繰り出しながら前記キャピラリを移動させる制御信号と、を含む請求項13に記載のワイヤボンディング装置。 - 前記第3制御信号は、
前記第1電極の表面における法線方向に沿って前記ボンディングワイヤを繰り出しながら前記キャピラリを上昇させる制御信号と、
前記第1電極の表面における法線方向と交差する方向に沿って、前記接合部側に前記ボンディングワイヤを繰り出しながら前記キャピラリを移動させる制御信号と、を含む請求項13又は14に記載のワイヤボンディング装置。 - 前記制御ユニットは、前記キャピラリを用いて、前記第2電極に前記ボンディングワイヤの他端を接合する第5制御信号をさらに前記ボンディングユニットに提供し、
前記第5制御信号は、
前記第1電極の表面における法線方向に沿って前記ボンディングワイヤを繰り出しながら前記キャピラリを上昇させる制御信号と、
前記第2電極上の位置に前記キャピラリの先端を移動させる制御信号と、
前記第2電極に前記ボンディングワイヤの他端を接合させる制御信号と、を含む、請求項13又は14に記載のワイヤボンディング装置。
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