KR102655499B1 - 반도체 장치, 반도체 장치의 제조 방법 및 와이어 본딩 장치 - Google Patents

반도체 장치, 반도체 장치의 제조 방법 및 와이어 본딩 장치 Download PDF

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KR102655499B1
KR102655499B1 KR1020217034716A KR20217034716A KR102655499B1 KR 102655499 B1 KR102655499 B1 KR 102655499B1 KR 1020217034716 A KR1020217034716 A KR 1020217034716A KR 20217034716 A KR20217034716 A KR 20217034716A KR 102655499 B1 KR102655499 B1 KR 102655499B1
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wire
electrode
bonding
capillary
target point
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KR1020217034716A
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English (en)
Korean (ko)
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KR20210143287A (ko
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나오키 세키네
선 기 박
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가부시키가이샤 신가와
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/0554—External layer
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    • H01L2224/05568—Disposition the whole external layer protruding from the surface
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/48095—Kinked
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48229—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
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    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85186—Translational movements connecting first outside the semiconductor or solid-state body, i.e. off-chip, reverse stitch
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
KR1020217034716A 2019-04-24 2020-04-13 반도체 장치, 반도체 장치의 제조 방법 및 와이어 본딩 장치 KR102655499B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2019-082589 2019-04-24
JP2019082589 2019-04-24
PCT/JP2020/016295 WO2020218063A1 (ja) 2019-04-24 2020-04-13 半導体装置、半導体装置の製造方法及びワイヤボンディング装置

Publications (2)

Publication Number Publication Date
KR20210143287A KR20210143287A (ko) 2021-11-26
KR102655499B1 true KR102655499B1 (ko) 2024-04-11

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KR1020217034716A KR102655499B1 (ko) 2019-04-24 2020-04-13 반도체 장치, 반도체 장치의 제조 방법 및 와이어 본딩 장치

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JP (1) JP7161252B2 (ja)
KR (1) KR102655499B1 (ja)
CN (1) CN113574642A (ja)
TW (1) TWI739379B (ja)
WO (1) WO2020218063A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI802880B (zh) * 2021-05-11 2023-05-21 日商新川股份有限公司 打線接合裝置以及打線接合方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW429489B (en) * 1999-08-31 2001-04-11 Advanced Semiconductor Eng Wire structure and wire bonding method of stacked chip
JP3915723B2 (ja) * 2003-03-25 2007-05-16 株式会社デンソー ワイヤボンディング方法
TWI263286B (en) * 2004-02-06 2006-10-01 Siliconware Precision Industries Co Ltd Wire bonding method and semiconductor package using the method
JP3946730B2 (ja) * 2004-04-26 2007-07-18 株式会社カイジョー ボンディングワイヤのループ形状及びそのループ形状を備えた半導体装置並びにワイヤボンディング方法
CH697970B1 (de) 2006-03-30 2009-04-15 Oerlikon Assembly Equipment Ag Verfahren zur Herstellung einer Wedge Wedge Drahtbrücke.
TWI349975B (en) * 2007-10-22 2011-10-01 Siliconware Precision Industries Co Ltd Wire bonding structure and method
JP4417427B1 (ja) * 2009-05-28 2010-02-17 株式会社新川 半導体装置
JP5263042B2 (ja) * 2009-07-10 2013-08-14 三菱電機株式会社 半導体装置、ワイヤボンディング方法およびワイヤボンディング装置
JP5898049B2 (ja) * 2012-11-09 2016-04-06 株式会社新川 半導体装置および半導体装置の製造方法
WO2014077026A1 (ja) * 2012-11-16 2014-05-22 株式会社新川 ワイヤボンディング装置及び半導体装置の製造方法
TWI518814B (zh) * 2013-04-15 2016-01-21 新川股份有限公司 半導體裝置以及半導體裝置的製造方法
JP6196092B2 (ja) * 2013-07-30 2017-09-13 ルネサスエレクトロニクス株式会社 半導体装置
TWI557821B (zh) * 2014-02-21 2016-11-11 新川股份有限公司 半導體裝置的製造方法以及打線裝置
TWI585927B (zh) * 2014-02-21 2017-06-01 新川股份有限公司 半導體裝置的製造方法、半導體裝置以及打線裝置
JP2016062962A (ja) 2014-09-16 2016-04-25 株式会社東芝 ワイヤボンディング装置、及び半導体装置

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WO2020218063A1 (ja) 2020-10-29
TW202107656A (zh) 2021-02-16
CN113574642A (zh) 2021-10-29
TWI739379B (zh) 2021-09-11
KR20210143287A (ko) 2021-11-26
JPWO2020218063A1 (ja) 2020-10-29
JP7161252B2 (ja) 2022-10-26

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