WO2020213104A1 - 気化器およびその製造方法 - Google Patents
気化器およびその製造方法 Download PDFInfo
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- WO2020213104A1 WO2020213104A1 PCT/JP2019/016527 JP2019016527W WO2020213104A1 WO 2020213104 A1 WO2020213104 A1 WO 2020213104A1 JP 2019016527 W JP2019016527 W JP 2019016527W WO 2020213104 A1 WO2020213104 A1 WO 2020213104A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01B—BOILING; BOILING APPARATUS ; EVAPORATION; EVAPORATION APPARATUS
- B01B1/00—Boiling; Boiling apparatus for physical or chemical purposes ; Evaporation in general
- B01B1/005—Evaporation for physical or chemical purposes; Evaporation apparatus therefor, e.g. evaporation of liquids for gas phase reactions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Definitions
- the present invention relates to a vaporizer and a method for manufacturing the same.
- a CVD (Chemical vapor deposition) method As a method of forming a film on the surface of an object using a gas raw material, for example, a CVD (Chemical vapor deposition) method can be mentioned.
- a CVD method Chemical vapor deposition
- several thin films are usually formed on a wafer by a CVD method.
- a part of the thin film is removed by spraying an etching gas on the thin film formed on the wafer by a CVD method to perform patterning.
- Patent Document 1 describes a method of vaporizing a liquid raw material stored in a liquid tank by a bubbling method, in which the liquid raw material in the liquid tank is vaporized by bubbling with a carrier gas at a predetermined flow rate.
- a method for vaporizing a characteristic liquid raw material is described. According to such a method, a raw material gas having a predetermined concentration can be stably supplied while being controlled with high accuracy even at a low flow rate, and by using it in a CVD device or the like in a flattening process. It is stated that stable low-concentration doping can be performed and the reliability of the insulating film can be improved.
- Patent Document 2 describes an orifice pipe having one gas passage for dispersing two or more kinds of raw material solutions in a carrier gas in the form of fine particles or atomization, and a place where the orifice pipe is communicated with the gas passage.
- a vaporization tube for vaporizing the two or more kinds of raw material solutions dispersed in the orifice tube, and an ejection portion for ejecting gas from the orifice tube is inserted into the vaporization tube, and the ejection portion is first.
- a CVD vaporizer characterized in that it is formed in a convex shape in which the outer diameter becomes smaller toward the side. Then, according to such a CVD vaporizer, various raw material solutions can be dispersed in the carrier gas in the form of fine particles or mist, and clogging can be less likely to occur, so that the raw material solution for CVD can be dispersed. It is stated that it is possible to provide a CVD vaporizer capable of accurately controlling the flow rate over a long period of time.
- Patent Document 3 a vaporization chamber heated by a heater, a primary filter arranged at the lower end of the vaporization chamber and heated by a heater, and a liquid raw material whose flow rate is adjusted are introduced from above the vaporization chamber to the primary.
- a liquid raw material supply unit that drops toward the filter, a carrier gas introduction path that guides the carrier gas to the lower surface of the primary filter, and a mixed gas of the carrier gas and the vaporized liquid raw material are discharged from the upper part of the vaporization chamber.
- a vaporizer is described, which comprises a raw material derivation path for the purpose.
- the liquid raw material can be vaporized and misted by the primary filter, and the mist can be vaporized in the vaporization chamber, which is higher than that of the conventional vaporizer that simply applies heat.
- liquid raw materials can be vaporized even at low temperatures, and even liquid raw materials with high thermodegradability can deposit and deposit thermal decomposition products and polymers inside the vaporizer. It is stated that it is possible to prevent blockage of the flow path and vaporize a large amount of liquid raw material.
- Patent Document 4 describes an outer block having a circular vaporization chamber forming hole in which a heater for heating a liquid raw material or a mixed gas of a liquid raw material and a carrier gas is embedded, and the liquid raw material or the liquid raw material.
- a heater for heating the mixed gas with the carrier gas is embedded, and the inner block is composed of a cylindrical inner block having a diameter slightly smaller than the hole for forming the vaporization chamber, the hole for forming the vaporization chamber, and the inner block.
- An introduction hole for introducing the liquid raw material or a mixed gas of the liquid raw material and the carrier gas into the vaporized flow path, and a liquid raw material gas vaporized or vaporized liquid raw material gas and the carrier gas from the vaporization flow path.
- a vaporizer characterized in that a lead-out hole for discharging a mixed gas with and is formed in the outer block. Then, according to such a vaporizer, the temperature boundary layer effect due to the slit-shaped vaporization flow path formed by the vaporization chamber forming hole and the inner block and the centrifugal force effect due to the arc are formed from the vessel wall. It is stated that efficient heat supply to the mixed gas is possible, and further, the synergistic effect of adiabatic expansion and rapid heat supply by the heater to the adiabatic expansion region can realize complete vaporization of the liquid raw material. ..
- Patent Documents 1 to 4 it is difficult to obtain a gas raw material adjusted to a desired temperature because precise temperature control is difficult, and a temperature different from the desired temperature is obtained. There was a tendency to obtain the gas raw material of. In addition, there was a large variation in the temperature of the gas raw material. Further, there are cases where precipitates such as solid raw materials are formed in the vaporizer.
- An object of the present invention is to solve the above problems. That is, it is an object of the present invention to provide a vaporizer capable of obtaining a gas raw material which is adjusted to a desired temperature and has very little temperature variation, and which hardly generates a precipitate or hardly deposits even if it occurs. .. If it is possible to obtain a gas raw material that is adjusted to a desired temperature and has very little temperature variation, it is considered that the vaporizer can be miniaturized. It is also an object of the present invention to provide a method for manufacturing such a vaporizer.
- the present inventor has diligently studied to solve the above problems and completed the present invention.
- the present invention is the following (1) to (7).
- a vaporizer that obtains a gas raw material for film formation by heating and vaporizing the raw material mist.
- a first flow path through which the raw material mist flows and a second flow path through which the heat medium for heating the raw material mist flows are provided inside a main portion made of a metal material.
- the equivalent area circle equivalent diameter of the cross section of the first flow path is 5 mm or less
- the equal area circle equivalent diameter of the cross section of the second flow path is 2 mm or less.
- a vaporizer that obtains a gas raw material for film formation (2) In the cross section of the main portion in the direction perpendicular to the direction in which the raw material mist flows.
- the holes of the first flow path are arranged in a row in the left-right direction, and the rows of holes form a layer in the vertical direction.
- the second flow path exists between layers of rows of holes adjacent to each other in the vertical direction, the second flow path and the first flow path are not connected, and the second flow path is from the vertical direction. It meanders in the vertical direction so as to avoid the hole of the first flow path in the layer of the row of holes sandwiched.
- a vaporizer for obtaining the gas raw material for film formation according to the above (1) (3) When the first flow path is divided into a plurality of parts in the longitudinal direction thereof, the temperature of the raw material mist existing inside the first flow path can be adjusted for each part. , A vaporizer for obtaining the gas raw material for film formation according to the above (1) or (2). (4) When the surface of the main portion where the holes for the raw material mist to flow in is formed as the entrance surface and the surface of the main portion where the holes for discharging the gas raw material are formed is the outer side surface. The result according to any one of (1) to (3) above, wherein the equivalent area circle-equivalent diameter of the first flow path existing inside the first flow path gradually changes from the entrance side surface to the exit side surface.
- a vaporizer that obtains a gaseous raw material for a membrane (5) The above (1) to (4), wherein the second flow path is formed in the horizontal direction and these are orthogonal to each other when the first flow path is arranged so as to be in the vertical direction. A vaporizer for obtaining the gas raw material for film formation according to any one. (6) A gap is provided between the outer surface of the main portion and at least a part of the first flow path and the second flow path so that internal heat is hardly released to the outside. , A vaporizer for obtaining a gas raw material for film formation according to any one of (1) to (5) above.
- a plurality of metal plate materials are prepared, a groove that becomes a part of the second flow path is formed on the main surface thereof, and the first surface that penetrates from one main surface to the other main surface.
- the process of forming a through hole that becomes a part of the flow path and It is provided with a step of bringing the main surfaces of the metal plate material into close contact with each other and joining them by diffusion bonding.
- a method for manufacturing a vaporizer which obtains the vaporizer according to any one of (1) to (6) above.
- the raw material mist can be heated under precise temperature control, it is possible to obtain a gas raw material which is adjusted to a desired temperature and has very little temperature variation, and further, a precipitate. It is possible to provide a vaporizer that hardly generates. It is also possible to provide a method for manufacturing such a vaporizer.
- FIG. 2 is a cross-sectional view taken along the line AA'of the aspect shown in FIG.
- FIG. 2 is a cross-sectional view taken along the line AA'of the aspect shown in FIG.
- FIG. 2 is a cross-sectional view taken along the line AA'of the aspect shown in FIG.
- FIG. 2 is a cross-sectional view taken along the line AA'of the aspect shown in FIG.
- FIG. 2 is a schematic perspective view which shows one aspect of the main part which the vaporizer of this invention can have.
- It is a cross-sectional view taken along the line BB'of the aspect shown in FIG.
- It is the schematic perspective view which shows the separated state of the main part shown in FIG.
- FIG. is the schematic which shows one aspect of the cross section of the main part of the vaporizer of this invention.
- FIG. 5 is a cross-sectional view taken along the line DD'of the aspect shown in FIG.
- FIG. 5 is a schematic cross-sectional view showing a mode in which the first flow path of the mode shown in FIG. 18 is replaced with another.
- FIG. 5 is a schematic cross-sectional view showing another aspect in which the first flow path of the aspect shown in FIG. 18 is replaced with another.
- FIG. 5 is a schematic cross-sectional view showing still another aspect in which the first flow path of the aspect shown in FIG. 18 is replaced with another.
- FIG. 2 is a cross-sectional view taken along the line EE'of the aspect shown in FIG. It is the schematic perspective view which shows the preferable mode of the vaporizer of this invention.
- FIG. 2 is a cross-sectional view taken along the line FF'of the aspect shown in FIG.
- FIG. 6 is a cross-sectional view taken along the line GG'of the aspect shown in FIG.
- FIG. 2 is a sectional view taken along line HH'of the aspect shown in FIG. 24.
- the present invention is a vaporizer that obtains a gas raw material for film formation by heating and vaporizing the raw material mist, and a first flow path through which the raw material mist flows and a heat medium that heats the raw material mist flow.
- the second flow path is provided inside a main portion made of a metal material, and the equivalent area circle equivalent diameter of the cross section of the first flow path is 5 mm or less, and the equal area circle equivalent diameter of the cross section of the second flow path is 2 mm or less.
- This is a gas raw material for film formation, in which there is no void other than the second flow path between one first flow path and another first flow path existing next to the first flow path inside the main portion. It is a vaporizer to obtain.
- Such a vaporizer is also referred to as "the vaporizer of the present invention" below.
- a plurality of metal plate materials are prepared, a groove that becomes a part of the second flow path is formed on the main surface thereof, and the groove is further penetrated from one main surface to the other main surface.
- a vaporizer that comprises a step of forming a through hole that becomes a part of the first flow path and a step of bringing the main surfaces of the metal plate material into close contact with each other and joining them by diffusion bonding to obtain the vaporizer of the present invention. It is a manufacturing method of. The manufacturing method of such a vaporizer is also referred to as "the manufacturing method of the present invention" below.
- the vaporizer of the present invention is a vaporizer that obtains a gas raw material for film formation by heating and vaporizing the raw material mist.
- the raw material mist to be heated by the vaporizer of the present invention preferably contains a mist-ized liquid raw material and is a mixture of the mist-ized liquid raw material and the carrier gas.
- the types of the carrier gas and the liquid raw material are not particularly limited, and are conventionally used, for example, when forming a thin film by a CVD method or when etching a part of a thin film as a part of a semiconductor device manufacturing process. It may be a carrier gas and a liquid raw material.
- examples of the carrier gas include an inert gas such as nitrogen and argon, and hydrogen.
- examples of the liquid raw material include solutions containing cyanide, fluoride, indium, gallium, aluminum, tantalum and the like. Solutions of indium, gallium, aluminum, tantalum and the like can be used for film formation. On the other hand, a solution of cyanide, fluoride or the like can be used for patterning to remove a part of the formed thin film.
- an etching gas such as cyanide or fluoride is used as the liquid raw material
- the main part described later is preferably made of a metal material (titanium, stainless steel, etc.) having excellent corrosion resistance.
- the raw material mist includes a mist of such a liquid raw material.
- the method of mist-forming the liquid raw material is not particularly limited, and for example, a conventionally known method may be used. Specifically, for example, a method of introducing a carrier gas and a liquid raw material into a sprayer to obtain a mist in which a mist-like liquid raw material is dispersed in the carrier gas can be mentioned.
- the raw material mist may include other than carrier gas and mist-ized liquid raw material.
- the raw material mist may contain a liquid raw material that is not in the form of mist due to insufficient mist formation.
- the vaporizer of the present invention has, for example, the configuration shown in FIG.
- FIG. 1 is a schematic perspective view showing a preferred embodiment of the vaporizer of the present invention.
- the vaporizer 10 of the present invention has a main portion 12 having a first flow path 1 through which the raw material mist flows and a second flow path 2 through which the heat medium for heating the raw material mist flows. It has a supply unit 14 for supplying the raw material mist to the unit 12, and a discharge unit 16 for collecting the gas raw material discharged from the main unit 12 and discharging it to the outside of the system.
- FIG. 2 is a schematic perspective view of the supply unit 14 shown in FIG. 1, and FIG. 3 is a cross-sectional view taken along the line AA'in FIG.
- the supply unit 14 includes an introduction hole 141 into which the raw material mist is introduced. Then, the raw material mist introduced into the inside of the supply unit 14 from the introduction hole 141 is discharged from the supply unit 14 and then supplied to the main unit 12.
- the supply unit 14 shown in FIGS. 2 and 3 is as evenly as possible to the inlet 1Pin of the plurality of first flow paths 1 in which the raw material mist introduced from the introduction hole 141 is formed on the surface of the main unit 12. It is configured to be supplied. Specifically, as shown in FIG.
- the cross-sectional diameter (r 14 ) of the flow path 143 of the raw material mist is configured to gradually expand inside the supply unit 14.
- the supply unit 14 is preferably made of a metal material like the main unit 12.
- the vaporizer of the present invention preferably includes a supply unit.
- FIG. 4 is a schematic perspective view of the main portion 12 shown in FIG. 1, and FIG. 5 is a sectional view taken along line BB'in FIG.
- the main portion 12 has a first flow path 1 through which the raw material mist flows and a second flow path 2 through which the heat medium for heating the raw material mist flows.
- the second flow path 2 is formed in the horizontal direction, and these are orthogonal to each other.
- Such an embodiment is preferable as the main part of the vaporizer of the present invention.
- the main part may be separably configured into several parts, and a spacer may be sandwiched between one main part and another main part, for example.
- FIG. 6 is a schematic perspective view showing a mode in which the three main portions 12a, 12b and 12c sandwich the spacers 9a and 9b
- FIG. 7 is a schematic perspective view showing a state in which the spacers 9a and 9b are separated.
- the spacers 9a and 9b may be, for example, plate-shaped, and a through hole 91 from one main surface to the other main surface is formed.
- FIG. 6 and FIG. 7 a case where three main parts and two spacers are provided is illustrated.
- the number of main parts and spacers is not particularly limited. Of course, it is not necessary to provide the spacer as in the embodiment shown in FIG.
- the spacer is preferably made of the same material as the main part. However, it may be made of a metal, an organic substance, or the like different from the main part.
- the heat medium flowing through the second flow path 2 is not particularly limited as long as it is a fluid capable of heating the raw material mist flowing through the first flow path.
- heated steam, oil and the like can be mentioned.
- the temperature of the heat medium is also not particularly limited.
- oil at 200 to 300 ° C. can be used as a heat medium.
- the raw material mist supplied from the supply unit 14 enters the inside of the first flow path 1 from the inlet 1Pin of the plurality of first flow paths 1 formed on the surface of the main part 12. enter. Then, the raw material mist receives heat from the heat medium in the second flow path 2 in the process of moving inside the first flow path 1 toward the outlet 1Pout, and when it is discharged from the outlet 1Pout, it becomes a gas in principle. There is.
- the main part is made of a metal material.
- a metal material such as a corrosion-resistant alloy (titanium, Inconel, Hastelloy (nickel-based alloy) or stainless steel (for example, SUS316L). That is, it is not composed of a combination of a metal material and a plastic material. ..
- the main part may be made of two or more kinds of metal materials, but is preferably made of one kind of metal material.
- a main portion made of such a metal material and having a fine flow path inside can be manufactured by a method including a step of bringing the main surfaces of the metal plate material into close contact with each other and joining them by diffusion bonding.
- FIG. 10 shows a mode in which the linear second flow path in FIG. 8 is replaced with a meandering one.
- FIG. 8 shows a cross section perpendicular to the first flow path (cross section horizontal to the second flow path) in the main part of the vaporizer of the present invention. It may be considered as a partially enlarged view of FIG.
- the holes of the first flow path are shown as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl.
- the second flow path is shown as 2a, 2b, 2c, and 2d.
- the shaded area in FIG. 8 means that a metal material is present. That is, in FIG. 8, the voids are only the first flow path and the second flow path.
- another hole of the first flow path existing next to the hole Pf of the first flow path is holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk.
- the space between the holes Pe and Pg and the holes Pf is filled with a metal material, and there are no voids.
- a second flow path exists between any one of the holes Pa, Pb, Pc, Pi, Pj, and Pk and the hole Pf, but there are no voids other than that.
- the arrow shown in FIG. 8 conceptually shows the transfer of heat.
- heat transfer from the heat medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is efficiently performed.
- FIG. 9 shows a cross section perpendicular to the first flow path in the main part of the vaporizer of the present invention.
- the second flow path in FIG. 8 described above is not linear, but shows a mode in which it replaces a meandering one.
- the holes of the first flow path are shown as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, and Pk.
- the second flow path is shown as 2a, 2b, 2c, and 2d.
- the shaded area in FIG. 9 means that a metal material is present. That is, in FIG. 9, the voids are only the first flow path and the second flow path.
- another hole of the first flow path existing next to the hole Pf of the first flow path is holes Pb, Pc, Pe, Pg, Pi, Pj.
- the space between the hole Pb, Pc, Pe, Pg, Pi, Pj and the hole Pf is filled with a metal material or the second flow path. Either (2b, 2c) only exists.
- the arrow shown in FIG. 9 conceptually shows the transfer of heat.
- heat transfer from the heat medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is efficiently performed.
- FIG. 10 does not correspond to the main part of the vaporizer of the present invention.
- a pipe-shaped first flow path and a second flow path are assembled in a grid pattern and fixed at their contact points.
- the holes of the first flow path are shown as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl.
- the second flow path is shown as 2a, 2b, 2c, and 2d.
- another hole of the first flow path existing next to the hole Pf of the first flow path is holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk.
- the arrow shown in FIG. 10 conceptually shows the transfer of heat.
- the heat transfer from the heat medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is transferred to the second flow path and the first flow path. It is performed only at the contact point with the flow path. Therefore, the heat transfer efficiency is poor.
- FIG. 11 does not correspond to the main part of the vaporizer of the present invention.
- the pipe-shaped first flow path and the second flow path are assembled in a grid pattern and fixed at their contact points, and the first flow paths are also their contact points. It is fixed with.
- the holes of the first flow path are shown as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl.
- the second flow path is shown as 2a, 2b, 2c, and 2d.
- another hole of the first flow path existing next to the hole Pf of the first flow path is holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk.
- holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk there are voids ⁇ and ⁇ between the holes Pf and the holes Pa. Further, there are voids ⁇ and ⁇ between the holes Pf and the holes Pe.
- the arrow shown in FIG. 11 conceptually shows the transfer of heat.
- the heat transfer from the heat medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is transferred to the second flow path and the first flow path. It is performed only at the contact point with the flow path. Therefore, the heat transfer efficiency is poor.
- FIG. 12 does not correspond to the main part of the vaporizer of the present invention.
- the portion where the aspect shown in FIG. 12 is different from the aspect shown in FIG. 11 described above is the cross-sectional shape of the first flow path. That is, the first flow path of the aspect shown in FIG. 11 has a circular cross section, but the first flow path of the aspect shown in FIG. 12 has a rectangular cross section. Other than that, it is the same as the embodiment shown in FIG. 11, and the pipe-shaped first flow path and the second flow path are assembled in a grid pattern and fixed at their contact points, and the first flow paths are also theirs. It is fixed at the contact point. In the case of such a configuration, the number of voids tends to decrease when the aspects shown in FIG. 11 are compared. However, even if the pipes are brought into close contact with each other, a certain amount of gap is formed between them, as shown in FIG. In FIG. 12, for example, there are voids ⁇ , ⁇ , ⁇ , ⁇ , and ⁇ .
- the holes of the first flow path are shown as Pa, Pb, Pc, Pd, Pe, Pf, Pg, Ph, Pi, Pj, Pk, Pl.
- the second flow path is shown as 2a, 2b, 2c, and 2d.
- another hole of the first flow path existing next to the hole Pf of the first flow path is holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk.
- holes Pa, Pb, Pc, Pe, Pg, Pi, Pj, and Pk there are voids ⁇ and ⁇ between the holes Pf and the holes Pa. Further, there are voids ⁇ and ⁇ between the holes Pf and the holes Pe.
- the arrow shown in FIG. 12 conceptually shows the transfer of heat.
- the heat transfer from the heat medium in the second flow path (2a, 2b, 2c, 2d) to the raw material mist in the first flow path is transferred to the second flow path and the first flow path. It is performed only at the contact point with the flow path. Therefore, the heat transfer efficiency is poor.
- a second flow is formed between one first flow path inside the main part and another first flow path existing next to the first flow path. Since there are no voids other than the path, heat transfer from the heat medium in the second flow path to the raw material mist in the first flow path is efficiently performed.
- the equivalent area circle-equivalent diameter (diameter) of the cross section of the first flow path existing inside the main portion of the vaporizer of the present invention is 5 mm or less, preferably 2 mm or less. Further, it is preferably 1 mm or more.
- the equivalent area circle-equivalent diameter in the present invention means the diameter of a perfect circle corresponding to the area of the figure of the cross section of the first flow path. The same applies to the equivalent area circle diameter of the second flow path.
- the shape of the cross section of the first flow path is not particularly limited. It may be circular, oval, rectangular or the like.
- the equivalent area circle-equivalent diameter (diameter) of the cross section of the second flow path existing inside the main portion of the vaporizer of the present invention is 2 mm or less, preferably 1 mm or less. Further, it is preferably 0.5 mm or more.
- the shape of the cross section of the second flow path is not particularly limited. It may be circular, oval, rectangular or the like.
- the vaporizer of the present invention is the first flow when the direction in which the heat medium is meandering and flowing is defined as the left-right direction in the cross section of the main portion in the direction perpendicular to the direction in which the raw material mist flows.
- the holes of the road are arranged in a row in the left-right direction, and the holes in the row are arranged in layers in the vertical direction, and the first layer of the holes in the row adjacent to each other in the vertical direction is arranged.
- Aspect 1 Aspect 2, and Aspect 3 are shown below as a vaporizer of the present invention corresponding to such a preferable embodiment.
- FIG. 13 is a schematic perspective view showing a preferred embodiment (aspect 1) of the main portion in the vaporizer of the present invention
- FIG. 14 shows a sectional view taken along line CC'in FIG.
- the second flow path 22 is formed on a plane orthogonal to the first flow path 21, and the second flow path 22 is the second flow path 22. It meanders so as to avoid one flow path.
- "21p" indicates a hole at the inlet or outlet of the first flow path or a hole of the first flow path appearing in a cross section
- "22p" indicates an inlet or outlet of the second flow path. Indicates a hole in.
- the main portion 20 as illustrated in FIGS. 13 and 14 is perpendicular to the direction in which the raw material mist flows through the main portion 20 (if the first flow path extends linearly in the vertical direction, that direction).
- a cross section A as illustrated in FIG. 14 can be obtained.
- the cross section A does not have to be a cross section in a direction perpendicular to all the first flow paths in the main portion 20.
- the cross section in the direction perpendicular to a part of the first flow path in the main part 20 is the cross section A in the main part 20.
- first flow path and the second flow path in FIGS. 13 and 14 show a flow path having an extremely simple structure for easy understanding.
- the second flow path may be connected to another second flow path at the end in the left-right direction.
- FIG. 15 shows a cross section A similar to that of FIG. Further, in FIG. 14, the hole of the first flow path is indicated as “21p”, but in FIG. 15, it is indicated as “P mk ” (m and k are integers of 1 or more).
- the holes (P mk ) of the first flow path are arranged in the left-right direction. They are arranged in a row, and the rows of holes are arranged so as to form layers in the vertical direction.
- holes (P mk ) are arranged in a row in the left-right direction, and the row-shaped holes have three layers of holes in the vertical direction. Then, the layers of these rows of holes are the first layer, the second layer, and the third layer from the bottom to the top, the holes in the first layer are "P 1k ", and the holes in the second layer are "P 2k ". Let the holes in the third layer be "P 3k ". That is, m is the layer number. In each layer, the holes are "P m1 ", "P m2 “, “P m3 “ ... "P mk " from left to right. That is, k is a hole number (serial number) in the same layer.
- the layers of the rows of holes adjacent to each other in the vertical direction are the first layer and the second layer, and the second layer and the third layer, but in the adjacent first layer and the second layer, the first layer
- the holes in one flow path are not arranged at the same position in the left-right direction. That is, the center of the hole of the second layer does not exist immediately above the center of the hole of the first layer.
- the holes in the second layer exist between the two holes in the first layer.
- the holes of the second flow path are not arranged at the same position in the left-right direction. That is, the center of the hole of the third layer does not exist immediately above the center of the hole of the second layer.
- the pores of the third layer exist between the two holes in the second layer.
- a second flow path 22 exists between layers of rows of holes adjacent to each other in the vertical direction. Further, the first flow path 21 and the second flow path 22 are not connected.
- the second flow path 22 meanders in the vertical direction so as to avoid the holes (21p, P mk ) of the first flow path in the layer of the row-shaped holes sandwiched from the vertical direction. For example, in FIG.
- the band-shaped portion that is the boundary between the first layer and the second layer meanders up and down, and the second flow path meanders along the shape of the band-shaped part. are doing.
- FIG. 16 is a cross section similar to that of FIG. 14, which shows the cross section of the first aspect.
- the vaporizer of the present invention has a first flow path in the cross section A of the main portion 20 in the direction perpendicular to the direction in which the raw material mist flows, when the direction in which the heat medium is meandering and flowing is the left-right direction.
- the holes 21p are arranged in a row in the left-right direction, and the rows of holes are arranged so as to form a layer in the vertical direction.
- the layers of the rows of holes adjacent to each other in the vertical direction are compared.
- the holes 21p of the first flow path are not arranged at the same position in the left-right direction, the second flow path 22 and the first flow path 21 are not connected, and the second flow path 22 is sandwiched from the vertical direction. It is an embodiment that meanders in the vertical direction so as to avoid the holes 21p of the first flow path in the layer of the rows of holes.
- FIG. 17 is a cross section similar to that of FIG. 14, which shows the cross section of the first aspect.
- the vaporizer of the present invention has a first flow path in the cross section A of the main portion 20 in the direction perpendicular to the direction in which the raw material mist flows, when the direction in which the heat medium is meandering and flowing is the left-right direction.
- the holes 21p are arranged in a row in the left-right direction, and the rows of holes are arranged in layers in the vertical direction, and the second flow path 22 and the first flow path 21 are not connected to each other.
- the second flow path 22 is in a form of meandering in the vertical direction so as to avoid the hole 21p of the first flow path in the layer of the row of holes sandwiched from the vertical direction.
- the temperature of the raw material mist existing inside the first flow path can be adjusted for each part. It is preferably configured. This is because when the gas raw material for film formation is produced in this way, the amount of precipitates generated is smaller.
- the surface of the main portion 12 where the hole 1Pin into which the raw material mist flows is formed is referred to as the entry side surface 125.
- the surface of the main portion 12 on which the hole 1Pout from which the gas raw material is discharged is formed is referred to as the protruding side surface 127.
- the temperature of the heat medium to be circulated to the second flow path in the portion of the former main portion 12 near the entry side surface 125 and the temperature of the latter main portion 12 in the portion close to the exit side surface 127 The temperature of the heat medium circulated in the flow path can be different.
- the temperature of the raw material mist existing inside 1 can be adjusted for each part.
- a path for flowing the heat medium to the second flow path in the portion of the main portion 12 near the entrance side surface 125 and a path for flowing the heat medium to the second flow path in the portion of the main portion 12 near the exit side surface 127 The heat medium having a relatively high temperature is circulated through the path through which the heat medium flows to the second flow path in the portion close to the entrance side surface 125 in the former main part 12, and the heat medium having a relatively high temperature is circulated in the latter main part 12. If a heat medium having a relatively low temperature is circulated through the path through which the heat medium flows to the second flow path in the portion near the side surface 127, the second flow existing inside the heat medium from the inlet side surface 125 to the outlet side surface 127. The temperature of the heat medium in the path can be gradually lowered. In this case, the temperature of the raw material mist that has flowed into the first flow path from the hole 1Pin gradually decreases in the process of moving toward the hole 1Pout.
- the temperature of the heat medium flowing into the second flow path inside the main portion 12a, the main portion 12b, and the main portion 12c is set. If it is configured so that it can be adjusted separately, the temperature of the raw material mist existing inside the main portion 12a, the main portion 12b, and the main portion 12c can be adjusted for each portion. For example, if the temperature of the heat medium in the second flow path existing inside the inlet side surface 125 to the exit side surface 127 is gradually lowered, the raw material mist flowing into the first flow path from the hole 1Pin can be removed. In the process of moving toward the hole 1Pout, the temperature gradually decreases.
- the surface of the main portion where the holes for the raw material mist to flow in is formed as an entry side surface, and the surface of the main portion where the holes for discharging the gas raw material are formed is an outer side surface.
- the diameter corresponding to the equal area circle of the first flow path existing inside the inside surface gradually changes from the entrance side surface to the exit side surface.
- FIG. 18 shows a cross-sectional view taken along the line DD'in FIG. 4, and FIGS. 19 to 21 show a cross-sectional view when the first flow path shown in FIG. 18 is replaced with another embodiment (preferable embodiment). Shown.
- the main portion 12 shown in FIG. 18 exists inside the inlet side surface 125 in which the hole 1Pin into which the raw material mist flows is formed toward the exit side surface 127 in which the hole 1Pout from which the gas raw material is discharged is formed.
- the diameter of the first flow path 1 has not changed.
- the first flow path 1 is formed linearly.
- the inside thereof is from the entrance side surface 125 in which the hole 1Pin into which the raw material mist flows is formed toward the exit side surface 127 in which the hole 1Pout from which the gas raw material is discharged is formed.
- the diameter corresponding to the equal area circle of the first flow path existing in the above is gradually increasing. Such an embodiment is preferable in that the gas raw material can be evenly distributed to the first flow path.
- the inside thereof is from the inlet side surface 125 where the hole 1Pin into which the raw material mist flows is formed toward the exit side surface 127 where the hole 1Pout from which the gas raw material is discharged is formed.
- the equivalent area circle-equivalent diameter of the first flow path existing in the above is gradually reduced and then increased. Such an embodiment is preferable in terms of promoting heat transfer due to turbulence of the gas raw material and homogenizing the fluid.
- FIG. 22 is a schematic perspective view of the discharge unit 16, and FIG. 23 is a sectional view taken along line EE in FIG. 22.
- the discharge unit 16 illustrated in FIG. 22 collects the gas raw material discharged from the main unit 12 as described above and discharges it to the outside of the system. In the case of the embodiment illustrated in FIGS. 22 and 23, the gas raw material discharged from the main portion 12 is collected in the recess 162. Then, the gas raw material is discharged to the outside of the system through the path 164 connected to this.
- the discharge unit 16 is preferably made of a metal material like the main unit 12.
- the vaporizer of the present invention preferably includes a discharge unit.
- the vaporizer of the present invention has a gap between the outer surface of the main part and at least a part of the first flow path and the second flow path, and is configured so that internal heat is not easily released to the outside. It is preferable that it is. By creating a vacuum inside the void, it becomes difficult for the heat inside to be released to the outside.
- the vaporizer of the present invention further has a gap between the outer surface of the portion other than the main portion and at least a part of the first flow path and the second flow path, and the heat inside is external. It may be configured so that it is difficult to be released to. Such a preferred embodiment will be described with reference to FIGS. 24 to 27.
- the main portion 12 in the embodiment shown in FIG. 1 is replaced with the main portion (12a, 9a, 12b, 9b, 12c) shown in FIG. 6, and the heat medium is introduced into the second flow path 72. It has an introduction hole 61 and a discharge hole 63 from which the heat medium is discharged from the second flow path 72, and further, between the outer surface 65 and at least a part of the first flow path 71 and the second flow path 72. It is an embodiment having a gap 67.
- 25 is a sectional view taken along line FF'in FIG. 24
- FIG. 26 is a sectional view taken along line GG' in FIG.
- FIG. 27 is a sectional view taken along line HF'in FIG. 24.
- a gap 67 is formed between the outer surface 65 and at least a part of the first flow path 71 and the second flow path 72.
- the void 67 is formed to have a constant thickness along the outer surface in principle.
- the portion where the introduction hole 61 of the heat medium, the discharge hole 63 of the heat medium, the introduction hole into which the raw material mist is introduced, and the discharge hole through which the gas raw material is discharged is formed.
- the gap 67 may not be formed in the air.
- the thickness of the void is not particularly limited, but is preferably about 0.5 to 2.0 mm.
- the void can be formed by, for example, the same method as in the first flow path.
- the method of forming the first flow path will be described later.
- the vaporizer of the present invention has such a void because it is difficult for the heat inside to be released to the outside.
- the inside of such a gap may be a vacuum.
- the inside of the void can be easily evacuated.
- the inside of the void may be filled with a heat insulating material, but the case where the inside of the void is evacuated is superior in heat insulating property.
- the production method of the present invention will be described.
- the vaporizer of the present invention as described above is preferably manufactured by the following manufacturing method of the present invention.
- FIG. 28A a plurality of metal plate members 30 are prepared. Then, as shown in FIG. 28 (b), a groove 34 which is a part of the second flow path is formed on the main surface 32 thereof.
- the means for forming such a groove 34 is not particularly limited. It may be formed by a chemical means such as etching, or may be formed by a physical means such as laser processing or cutting.
- a through hole 40 penetrating from one main surface 32 to the other main surface 38 is formed.
- a drill can be used to form the through hole 40.
- the through hole 40 may be formed by a chemical means such as etching or a physical means such as laser processing or cutting. The through hole 40 becomes a part of the first flow path.
- FIG. 29 a case where two metal plate members 42 having a groove 34 formed as a part of the second flow path formed on the main surface 32 in close contact with each other is described, but FIG. 30 (a). ),
- the metal plate material 42 in which the groove 34 and the through hole 40 are formed and the metal plate material 42'in which the groove 34 is not formed and the through hole 40 is formed may be brought into close contact with each other.
- the main portions 32 of these metal plate members 42 and 42'are bonded to each other by diffusion bonding the main portion having the first flow path 52 and the second flow path 54 inside as shown in FIG. 30 (c).
- a part of 50 can be obtained.
- the main portion can be obtained.
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Abstract
Description
すなわち、所望の温度に調整され、かつ温度のバラツキが非常に少ない気体原料を得ることができ、さらに析出物をほとんど発生させない、あるいは生じても堆積しにくい気化器を提供することを目的とする。所望の温度に調整され、かつ温度のバラツキが非常に少ない気体原料を得ることができる場合、気化器を小型化できると考えられる。また、そのような気化器の製造方法を提供することを目的とする。
本発明は以下の(1)~(7)である。
(1)原料ミストを加熱して気化することで成膜用の気体原料を得る気化器であって、
前記原料ミストが流通する第1流路および前記原料ミストを加熱する熱媒体が流通する第2流路を金属材料からなる主部の内部に有し、
前記第1流路の断面の等面積円相当径が5mm以下、前記第2流路の断面の等面積円相当径が2mm以下であり、
前記主部の内部において1つの第1流路と、その隣に存在する別の第1流路との間に、第2流路以外の空隙が存在しない、
成膜用の気体原料を得る気化器。
(2)前記原料ミストが流れる方向に対して垂直方向における前記主部の断面において、
前記熱媒体が蛇行しながら流通している方向を左右方向とした場合に、前記第1流路の孔が左右方向に列状に並んでおり、かつ、列状の孔が上下方向に層をなすように配置されていて、
上下方向に隣り合う列状の孔の層の間に前記第2流路が存在し、前記第2流路と前記第1流路とは繋がっておらず、前記第2流路は上下方向から挟まれる列状の孔の層における前記第1流路の孔を回避するように上下方向に蛇行している、
上記(1)に記載の成膜用の気体原料を得る気化器。
(3)前記第1流路をその長手方向において複数の部位に分けた場合に、前記第1流路の内部に存する前記原料ミストの温度を、それら部位ごとに調整できるように構成されている、上記(1)または(2)に記載の成膜用の気体原料を得る気化器。
(4)前記主部における前記原料ミストが流入する孔が形成されている面を入側面とし、前記主部における前記気体原料が排出される孔が形成されている面を出側面とした場合に、前記入側面から前記出側面へ向かって、その内部に存する前記第1流路の等面積円相当径が徐々に変化している、上記(1)~(3)のいずれかに記載の成膜用の気体原料を得る気化器。
(5)前記第1流路が鉛直方向となるように配置した場合に、前記第2流路は水平方向に形成されており、これらが直行している、上記(1)~(4)のいずれかに記載の成膜用の気体原料を得る気化器。
(6)前記主部の外面と、前記第1流路および前記第2流路の少なくとも一部との間に空隙を有し、内部の熱が外部へ放出され難くなるように構成されている、上記(1)~(5)のいずれかに記載の成膜用の気体原料を得る気化器。
(7)複数枚の金属製板材を用意し、その主面上に前記第2流路の一部となる溝を形成し、さらにその一方の主面から他方の主面へ貫通する前記第1流路の一部となる貫通孔を形成する工程と、
前記金属製板材の主面同士を密着させて拡散接合によって結合する工程とを備え、
上記(1)~(6)のいずれかに記載の気化器を得る、気化器の製造方法。
本発明は、原料ミストを加熱して気化することで成膜用の気体原料を得る気化器であって、前記原料ミストが流通する第1流路および前記原料ミストを加熱する熱媒体が流通する第2流路を金属材料からなる主部の内部に有し、前記第1流路の断面の等面積円相当径が5mm以下、前記第2流路の断面の等面積円相当径が2mm以下であり、前記主部の内部において1つの第1流路と、その隣に存在する別の第1流路との間に、第2流路以外の空隙が存在しない、成膜用の気体原料を得る気化器である。
このような気化器を、以下では「本発明の気化器」ともいう。
このような気化器の製造方法を、以下では「本発明の製造方法」ともいう。
本発明の気化器について説明する。
本発明の気化器は、原料ミストを加熱して気化することで、成膜用の気体原料を得る気化器である。
ここでキャリアガスおよび液体原料の種類は特に限定されず、例えば半導体デバイスの製造プロセスの一部として、CVD法によって薄膜を形成する際や薄膜の一部をエッチングする際に、従来用いられているキャリアガスおよび液体原料であってよい。
一方、シアン、フッ化物等の溶液は、形成された薄膜の一部を除去するパターニングに用いることができる。
液体原料としてシアン、フッ化物などのエッチングガスを用いる場合、後述する主部は耐腐食性に優れる金属材料(チタン、ステンレス等)からなることが好ましい。
液体原料をミスト化する方法は特に限定されず、例えば従来公知の方法であってよい。具体的には例えば、キャリアガスおよび液体原料を噴霧器へ導入して、キャリアガス内に霧状の液体原料が分散しているミストを得る方法が挙げられる。
図1は、本発明の気化器の好適態様を示す概略斜視図である。
図1において本発明の気化器10は、原料ミストが流通する第1流路1および原料ミストを加熱する熱媒体が流通する第2流路2を内部に有する主部12を有し、さらに主部12へ原料ミストを供給するための供給部14と、主部12から排出された気体原料を集め、系外へ排出する排出部16とを有する。
図2は図1に示した供給部14の概略斜視図であり、図3は図2におけるA-A´線断面図である。
図2、図3に示すように、供給部14は原料ミストが導入される導入孔141を備える。そして、導入孔141から供給部14の内部へ導入された原料ミストは、供給部14から排出された後、主部12へ供給される。
図2、図3に示した供給部14は、導入孔141から導入された原料ミストが主部12の表面に形成されている複数の第1流路1の入口1Pinへ、可能な限り均等に供給されるように構成されている。具体的には、図3に示すように、原料ミストの流路143の断面径(r14)が、供給部14の内部において、徐々に広がるように構成されている。
供給部14は、主部12と同様に金属材料からなることが好ましい。
なお、本発明の気化器は供給部を備えることが好ましい。
図4は図1に示した主部12の概略斜視図であり、図5は図4におけるB-B´線断面図である。
図4、図5に示すように、主部12は原料ミストが流通する第1流路1および原料ミストを加熱する熱媒体が流通する第2流路2を内部に有する。
図6は3つの主部12a、12b、12cがスペーサー9a、9bを挟んでいる態様を示す概略斜視図であり、図7はそれを分離した状態を示す概略斜視図である。
スペーサー9a、9bは例えば板状であってよく、その一方の主面から他方の主面への貫通孔91が形成されている。主部12aから排出された原料ミストの全てがスペーサー9aに形成された貫通孔91に集まることで、原料ミストの温度や成分等がより均一化される。
図6、図7に示すように、主部がいくつかに分離可能に構成されていると、第1流路等の内部を、必要に応じて掃除することが容易になる。
なお、図6、図7では3つの主部と2つのスペーサーを備える場合を例示している。主部とスペーサーの数は特に限定されない。当然、図4に示した態様のようにスペーサーを備えなくてもよい。
ここで主部は、2種類以上の金属材料からなってよいが、1種類の金属材料からなることが好ましい。
このような金属材料からなり、内部に微細な流路を備える主部は、金属製板材の主面同士を密着させて拡散接合によって結合する工程を備える方法によって製造することができる。
これについて、図8~図12を用いて説明する。
図8、図10、図11および図12は、いずれも第1流路と第2流路とが垂直に交差している場合を示している。図9は、図8における直線的な第2流路が、蛇行したものに置き換わった態様を示している。
図8から明らかなように、孔Pe、Pgのいずれかと孔Pfとの間は金属材料で満たされており、空隙は存在しない。
また、孔Pa、Pb、Pc、Pi、Pj、Pkのいずれかと孔Pfと間には第2流路は存在しているが、それ以外には空隙は存在しない。
図9に示す態様において第1流路の孔は、Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pkと示されている。また、図9において第2流路は2a、2b、2c、2dと示されている。また、図9における斜線部は金属材料が存在していることを意味している。すなわち、図9において空隙は第1流路および第2流路のみである。
この場合も、図8に示した態様の場合と同じように、孔Pb、Pc、Pe、Pg、Pi、Pjのいずれかと孔Pfと間は金属材料で満たされているか、または第2流路(2b、2c)のみが存在しているかのいずれかである。
図10はパイプ状の第1流路と第2流路とが格子状に組まれ、それらの接点で固定されたものである。
図10に示す態様において第1流路の孔は、Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk、Plと示されている。また、図10において第2流路は2a、2b、2c、2dと示されている。
図10から明らかなように、孔Pfと孔Peとの間は空隙γが存在する。また、孔Pfと孔Pgとの間も同様に空隙δが存在する。
図11は、前述の図10の場合と同様にパイプ状の第1流路と第2流路とが格子状に組まれ、それらの接点で固定され、さらに第1流路同士もそれらの接点で固定されたものである。
図11に示す態様において第1流路の孔は、Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk、Plと示されている。また、図11において第2流路は2a、2b、2c、2dと示されている。
図11から明らかなように、孔Pfと孔Paとの間は空隙αおよびγが存在する。また、孔Pfと孔Peとの間には空隙γおよびεが存在する。
図12に示す態様が、前述の図11に示した態様と異なる部分は、第1流路の断面形状である。すなわち、図11に示した態様の第1流路は断面が円形であったが、図12に示す態様の第1流路は断面が矩形である。それ以外は図11に示した態様と同様であり、パイプ状の第1流路と第2流路とが格子状に組まれ、それらの接点で固定され、さらに第1流路同士もそれらの接点で固定されたものである。
このような構成の場合、図11に示した態様を比較すれば空隙は少なくなる傾向がある。しかし、パイプ同士を密着させても、図12に示すように、それらの間にはある程度の隙間が形成される。図12では、例えば空隙α、β、γ、δ、ε、ζが存在する。
図11から明らかなように、孔Pfと孔Paとの間は空隙αおよびγが存在する。また、孔Pfと孔Peとの間には空隙γおよびεが存在する。
ここで本発明における等面積円相当径とは、第1流路の断面の図形の面積に相当する真円の直径を意味する。なお、第2流路の等面積円相当径についても同様とする。
第1流路の断面の大きさが上記の範囲であると、圧力損失と伝熱性能のバランス、析出物の閉塞しにくさという点で好ましい。
なお、第1流路の断面の形状は特に限定されない。円形、楕円形、矩形などであってよい。
第2流路の断面の大きさが上記の範囲であると、圧力損失と伝熱性能のバランスという点で好ましい。
なお、第2流路の断面の形状は特に限定されない。円形、楕円形、矩形などであってよい。
図13は、本発明の気化器における主部の好適態様(態様1)を示す概略斜視図であり、図14は図13におけるC-C'線断面図を示している。
図13に示した態様1の主部20では、図13に示すように、第1流路21に直行する平面上に第2流路22が形成されており、第2流路22は、第1流路を回避するように蛇行している。
なお、図13、図14において「21p」は第1流路の入口もしくは出口の孔または断面に現れた第1流路の孔を示しており、「22p」は第2流路の入口もしくは出口の孔を示している。
図13、図14に例示するような主部20は、主部20を原料ミストが流れる方向(第1流路が鉛直方向に直線状に伸びている場合は、その方向)に対して垂直の方向にて切断することで、図14に例示するような断面Aを得ることができる。
なお、断面Aは、主部20における全ての第1流路に対して直角の方向の断面でなくてもよい。第1流路の構成によっては、全ての第1流路に対して直角の断面を得ることができない場合もありえる。そのような場合は、主部20における第1流路の一部に対して(主部20における、できるだけ多くの第1流路に対して)垂直の方向の断面を、主部20における断面Aとする。
要件2について図15を用いて説明する。図15は図14と同様の断面Aを示している。また、図14では第1流路の孔を「21p」と示したが、図15では「Pmk」(mおよびkは1以上の整数とする)と示している。
主部20では、図15に例示するように、断面Aにおいて熱媒体が蛇行しながら流通している方向を左右方向とした場合に、第1流路の孔(Pmk)が左右方向に列状に並んでおり、かつ、列状の孔が上下方向に層をなすように配置されている。図15では、左右方向に列状に孔(Pmk)が並んでおり、列状の孔が上下方向に孔の層が3層存在している。そして、それらの列状の孔の層を下方から上方へ第1層、第2層および第3層とし、第1層の孔を「P1k」、第2層の孔を「P2k」、第3層の孔を「P3k」とする。つまり、mを層の番号とする。また、各層において孔は左から右へ「Pm1」、「Pm2」、「Pm3」・・・「Pmk」とする。つまり、kは同一層内の孔の番号(連番)とする。ここで、第1層に存在する「P1k」の孔の直上には、第3層の「P3k」の孔が存在するものとする。例えば、第1層に存在する「P13」の孔の直上には、第3層の「P33」の孔が存在するものとする。また、第1層に存在する「P1k」の孔の左上には第2層の「P2k」の孔が存在するものとする。例えば、第1層に存在する「P13」の孔の左上には第2層の「P23」の孔が存在するものとする。
主部20では、図14および図15に示したように、上下方向に隣り合う列状の孔の層の間に第2流路22が存在する。
また、第1流路21と第2流路22は繋がっていない。
そして、第2流路22は上下方向から挟まれる列状の孔の層における第1流路の孔(21p、Pmk)を回避するように上下方向に蛇行している。
例えば図15において、第1流路の孔(P11、P12、P13、P14)からなる第1層と、第2流路の孔(P21、P22、P23、P24、P25)からなる第2層との間に第2流路22が存在しており、その第2流路は、第1層の孔(P11、P12、P13、P14)と第2層の孔(P21、P22、P23、P24、P25)とを回避するように上下方向に蛇行している。
ここで、図15に示すように、第1層と第2層との境界となっている帯状の部分が上下に蛇行しており、第2流路はその帯状の部分の形状に沿って蛇行している。
図16は、態様1の断面を示す図14と同様の断面である。
本発明の気化器は、原料ミストが流れる方向に対して垂直方向における主部20の断面Aにおいて、熱媒体が蛇行しながら流通している方向を左右方向とした場合に、第1流路の孔21pが左右方向に列状に並んでおり、かつ、列状の孔が上下方向に層をなすように配置されていて、加えて、上下方向に隣り合う列状の孔の層を対比したときに第1流路の孔21pは左右方向では同じ位置に配置されておらず、第2流路22と第1流路21とは繋がっておらず、第2流路22は上下方向から挟まれる列状の孔の層における第1流路の孔21pを回避するように上下方向に蛇行している態様である。
図17は、態様1の断面を示す図14と同様の断面である。
本発明の気化器は、原料ミストが流れる方向に対して垂直方向における主部20の断面Aにおいて、熱媒体が蛇行しながら流通している方向を左右方向とした場合に、第1流路の孔21pが左右方向に列状に並んでおり、かつ、列状の孔が上下方向に層をなすように配置されていて、第2流路22と第1流路21とは繋がっておらず、第2流路22は上下方向から挟まれる列状の孔の層における第1流路の孔21pを回避するように上下方向に蛇行している態様である。
このようにして成膜用の気体原料を製造すると、析出物の発生量がより少なくなるからである。
例えば図4において、主部12における原料ミストが流入する孔1Pinが形成されている面を入側面125とする。また、主部12における気体原料が排出される孔1Poutが形成されている面を出側面127とする。
この場合に、主部12における入側面125に近い部位内の第2流路へ熱媒体を流す経路と、主部12における出側面127に近い部位内の第2流路へ熱媒体を流す経路とを別に構成すれば、前者の主部12における入側面125に近い部位内の第2流路へ流通させる熱媒体の温度と、後者の主部12における出側面127に近い部位内の第2流路へ流通させる熱媒体の温度とを異なるものとすることができる。この場合、前者の主部12における入側面125に近い部位内の第1流路1の内部に存する原料ミストの温度と、後者の主部12における出側面127に近い部位内の第1流路1の内部に存する原料ミストの温度とを、部位ごとに調整できることとなる。
また、例えば、主部12における入側面125に近い部位内の第2流路へ熱媒体を流す経路と、主部12における出側面127に近い部位内の第2流路へ熱媒体を流す経路とを別に構成し、前者の主部12における入側面125に近い部位内の第2流路へ熱媒体を流す経路へ相対的に温度が高い熱媒体を流通させ、後者の主部12における出側面127に近い部位内の第2流路へ熱媒体を流す経路へ相対的に温度が低い熱媒体を流通させれば、入側面125から出側面127へ向かって、その内部に存する第2流路内の前記熱媒体の温度を徐々に低くすることができる。この場合、孔1Pinから第1流路内に流入した原料ミストは、孔1Poutへ向かって移動する過程で、徐々に温度が低くなっていく。
図18は図4におけるD-D'線断面図を示しており、図19~図21は、図18に示す第1流路を、別の態様(好適態様)に置き換えた場合の断面図を示している。
図22は排出部16の概略斜視図であり、図23は図22におけるE-E´線断面図である。
図22に例示される排出部16は、上記のような主部12から排出された気体原料を集め、これを系外へ排出する。
図22、図23に例示した態様の場合、主部12から排出された気体原料が、凹み162に集められる。そして、これとつながる経路164を通って、気体原料は系外へ排出される。
排出部16は、主部12と同様に金属材料からなることが好ましい。
なお、本発明の気化器は排出部を備えることが好ましい。
なお、本発明の気化器は、さらに、前記主部以外の部分の外面と、前記第1流路および前記第2流路の少なくとも一部との間に空隙を有し、内部の熱が外部へ放出され難くなるように構成されていてもよい。
このような好適態様について、図24~図27を用いて説明する。
そして、図25は図24におけるF-F´線断面図、図26は図24におけるG-G´線断面図、図27は図24におけるH-H´線断面図である。
図24~図27に示した好適態様の場合、空隙67は、原則、外面にそって一定の厚さで形成されている。ただし、熱媒体の導入孔61および熱媒体の排出孔63ならび原料ミストが導入される導入孔および気体原料は排出される排出孔が形成されている部分については、図24~図27に示すように、空隙67が形成されていなくてもよい。
なお、このような空隙内を真空としてもよい。後述する本発明の製造方法によって本発明の気化器を製造すると、空隙内を容易に真空とすることができる。空隙内を保温材で満たしてもよいが、空隙内を真空とする場合の方が断熱性に優れる。
本発明の製造方法について説明する。
上記のような本発明の気化器は、次に示す本発明の製造方法によって製造することが好ましい。
本発明の製造方法では、初めに図28(a)に示すように、複数枚の金属製板材30を用意する。
そして、図28(b)に示すように、その主面32の上に第2流路の一部となる溝34を形成する。
この貫通孔40は第1流路の一部となる。
そして、これらの金属製板材42の主面32同士を拡散接合によって結合すると、図29(c)に示すような、内部に第1流路52および第2流路54を備える主部の一部50を得ることができる。
そして、図29(c)に示すような主部の一部50を複数作成し、それらの主面同士を拡散結合によって結合していくと、主部を得ることができる。
そして、これらの金属製板材42、42´の主面32同士を拡散接合によって結合すると、図30(c)に示すような、内部に第1流路52および第2流路54を備える主部の一部50を得ることができる。
そして、図30(c)に示すような主部の一部50を複数作成し、それらの主面同士を拡散結合によって結合していくと、主部を得ることができる。
1Pin 第1流路の入口
1Pout 第1流路の出口
Pa、Pb、Pc、Pd、Pe、Pf、Pg、Ph、Pi、Pj、Pk、Pl 第1流路の孔
α、β、γ、δ、ε、ζ 空隙
2、2a、2b、2c、2d 第2流路
9a、9b スペーサー
91 貫通孔
10 本発明の気化器
12、12a、12b、12c 主部
125 主部の入側面
127 主部の出側面
14 供給部
141 導入孔
143 流路
16 排出部
161 排出孔
162 凹み
164 経路
20 主部
21 第1流路
21p 第1流路の孔
22 第2流路
22p 第2流路の孔
30 金属製板材
32 主面
34 溝
36 金属製板材
38 主面
40 貫通孔
42 金属製板材
50 主部(の一部)
52 第1流路
54 第2流路
61 導入孔
63 排出孔
65 外面
67 空隙
71 第1流路
72 第2流路
Claims (7)
- 原料ミストを加熱して気化することで成膜用の気体原料を得る気化器であって、
前記原料ミストが流通する第1流路および前記原料ミストを加熱する熱媒体が流通する第2流路を金属材料からなる主部の内部に有し、
前記第1流路の断面の等面積円相当径が5mm以下、前記第2流路の断面の等面積円相当径が2mm以下であり、
前記主部の内部において1つの第1流路と、その隣に存在する別の第1流路との間に、第2流路以外の空隙が存在しない、
成膜用の気体原料を得る気化器。 - 前記原料ミストが流れる方向に対して垂直方向における前記主部の断面において、
前記熱媒体が蛇行しながら流通している方向を左右方向とした場合に、前記第1流路の孔が左右方向に列状に並んでおり、かつ、列状の孔が上下方向に層をなすように配置されていて、
上下方向に隣り合う列状の孔の層の間に前記第2流路が存在し、前記第2流路と前記第1流路とは繋がっておらず、前記第2流路は上下方向から挟まれる列状の孔の層における前記第1流路の孔を回避するように上下方向に蛇行している、
請求項1に記載の成膜用の気体原料を得る気化器。 - 前記第1流路をその長手方向において複数の部位に分けた場合に、前記第1流路の内部に存する前記原料ミストの温度を、それら部位ごとに調整できるように構成されている、請求項1または2に記載の成膜用の気体原料を得る気化器。
- 前記主部における前記原料ミストが流入する孔が形成されている面を入側面とし、前記主部における前記気体原料が排出される孔が形成されている面を出側面とした場合に、前記入側面から前記出側面へ向かって、その内部に存する前記第1流路の等面積円相当径が徐々に変化している、請求項1~3のいずれかに記載の成膜用の気体原料を得る気化器。
- 前記第1流路が鉛直方向となるように配置した場合に、前記第2流路は水平方向に形成されており、これらが直行している、請求項1~4のいずれかに記載の成膜用の気体原料を得る気化器。
- 前記主部の外面と、前記第1流路および前記第2流路の少なくとも一部との間に空隙を有し、内部の熱が外部へ放出され難くなるように構成されている、請求項1~5のいずれかに記載の成膜用の気体原料を得る気化器。
- 複数枚の金属製板材を用意し、その主面上に前記第2流路の一部となる溝を形成し、さらにその一方の主面から他方の主面へ貫通する前記第1流路の一部となる貫通孔を形成する工程と、
前記金属製板材の主面同士を密着させて拡散接合によって結合する工程とを備え、
請求項1~6のいずれかに記載の気化器を得る、気化器の製造方法。
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EP (1) | EP3958294A4 (ja) |
JP (1) | JP7360201B2 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP7045743B1 (ja) | 2021-10-11 | 2022-04-01 | 株式会社リンテック | 気化器 |
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JP7045743B1 (ja) | 2021-10-11 | 2022-04-01 | 株式会社リンテック | 気化器 |
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JP2023057341A (ja) * | 2021-10-11 | 2023-04-21 | 株式会社リンテック | 気化器 |
Also Published As
Publication number | Publication date |
---|---|
EP3958294A1 (en) | 2022-02-23 |
CN113692641A (zh) | 2021-11-23 |
JPWO2020213104A1 (ja) | 2020-10-22 |
US20220154333A1 (en) | 2022-05-19 |
KR20210134022A (ko) | 2021-11-08 |
JP7360201B2 (ja) | 2023-10-12 |
US11885017B2 (en) | 2024-01-30 |
EP3958294A4 (en) | 2022-05-04 |
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