WO2020206725A1 - 液晶显示面板及显示装置 - Google Patents

液晶显示面板及显示装置 Download PDF

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Publication number
WO2020206725A1
WO2020206725A1 PCT/CN2019/083686 CN2019083686W WO2020206725A1 WO 2020206725 A1 WO2020206725 A1 WO 2020206725A1 CN 2019083686 W CN2019083686 W CN 2019083686W WO 2020206725 A1 WO2020206725 A1 WO 2020206725A1
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WO
WIPO (PCT)
Prior art keywords
common electrode
thin film
liquid crystal
film transistor
crystal display
Prior art date
Application number
PCT/CN2019/083686
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English (en)
French (fr)
Inventor
蔡雪涛
Original Assignee
深圳市华星光电技术有限公司
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Priority to US16/617,300 priority Critical patent/US20210364843A1/en
Publication of WO2020206725A1 publication Critical patent/WO2020206725A1/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136218—Shield electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/122—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode having a particular pattern
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a liquid crystal display panel and a display device.
  • FIG. 1 shows a schematic top view of the existing array substrate 1'structure designed with no black matrix (Data Line BM Less, DBS) above the data line.
  • the existing liquid crystal display panel generally includes an array substrate 1', and an array substrate 1'.
  • the color filter substrate (not shown in the figure) and the liquid crystal layer (not shown in the figure) arranged between the array substrate 1'and the color filter substrate are relatively attached to the substrate 1', wherein the
  • the array substrate 1' includes a plurality of scan lines 12 and a plurality of data lines 13, the gate lines 12 and the data lines 13 are intersected to define a plurality of pixel units, and pixel electrodes are provided in the pixel units.
  • the array substrate adopts the 3T pixel unit structure shown in FIG. 4.
  • the DBS common electrode line is provided above the data line 13, and the DBS common electrode line is electrically connected to the common electrode line A-com on the array substrate 1'through the via 16 of the shared thin film transistor,
  • the via 16 is bridged by indium tin oxide (Indium Tin Oxide, ITO), so that the DBS common electrode line and the common electrode layer on the color filter substrate have the same potential, so that the liquid crystal molecules can remain undeflected.
  • ITO Indium Tin Oxide
  • the state serves the purpose of shielding light and can replace the black matrix (BM) corresponding to the data line 13 in the liquid crystal display panel.
  • the present disclosure provides a liquid crystal display panel and a display device, which solves the problem of the DBS common electrode due to the voltage of the common electrode line of the array substrate is not equal to the voltage of the common electrode layer of the color filter substrate when the liquid crystal display panel performs optical phase matching
  • An electric field is formed between the wire and the common electrode layer of the color filter substrate, which causes the conductive foreign objects between the array substrate and the color filter substrate to burn the upper and lower panels of the liquid crystal display panel, causing foreign body sensation and reducing yield.
  • the embodiment of the present disclosure provides a liquid crystal display panel, which includes an array substrate, a color filter substrate disposed opposite to the array substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate; wherein the array
  • the substrate includes:
  • the part of the DBS common electrode line located at the periphery of the pixel unit is electrically connected to the common electrode layer of the color filter substrate, and the part of the DBS common electrode line located inside the pixel unit is connected to the common electrode of the array substrate The line is not connected.
  • the material of the DBS common electrode line is indium tin oxide.
  • a gold ball is arranged between a portion of the DBS common electrode line located at the periphery of the pixel unit and the common electrode layer of the color filter substrate to achieve electrical connection.
  • the pixel unit is divided into a main pixel area and a slave pixel area.
  • the main pixel area includes a main thin film transistor and a main pixel electrode, wherein the gate of the main thin film transistor is connected to the scan line, and the source of the main thin film transistor is connected to the main pixel electrode.
  • the data line is connected, and the drain of the main thin film transistor is connected to the main pixel electrode.
  • the slave pixel area includes a slave thin film transistor, a shared thin film transistor, and a slave pixel electrode, wherein the gate of the slave thin film transistor is connected to the scan line, and the slave thin film transistor
  • the source is connected to the data line
  • the drain of the slave thin film transistor is connected to the slave pixel electrode and the source of the shared thin film transistor
  • the gate of the shared thin film transistor is connected to the scan line, so The drain of the shared thin film transistor is connected to the common electrode line.
  • the array substrate includes a first metal layer and a second metal layer, wherein the common electrode line of the array substrate is located on the first metal layer, and the data line is located on the The second metal layer.
  • the embodiments of the present disclosure provide a liquid crystal display panel, including an array substrate, a color filter substrate disposed opposite to the array substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate; wherein, the The array substrate includes:
  • a plurality of DBS common electrode lines arranged above the plurality of data lines;
  • the part of the DBS common electrode line located at the periphery of the pixel unit is electrically connected to the common electrode layer of the color filter substrate, and the part of the DBS common electrode line located inside the pixel unit is connected to the common electrode of the array substrate The line is not connected.
  • the width of the DBS common electrode line is greater than the width of the data line.
  • the material of the DBS common electrode line is indium tin oxide.
  • a gold ball is arranged between a portion of the DBS common electrode line located at the periphery of the pixel unit and the common electrode layer of the color filter substrate to achieve electrical connection.
  • the pixel unit is divided into a main pixel area and a slave pixel area.
  • the main pixel area includes a main thin film transistor and a main pixel electrode, wherein the gate of the main thin film transistor is connected to the scan line, and the source of the main thin film transistor Connected to the data line, and the drain of the main thin film transistor is connected to the main pixel electrode.
  • the slave pixel area includes a slave thin film transistor, a shared thin film transistor, and a slave pixel electrode, wherein the gate of the slave thin film transistor is connected to the scan line, and the slave thin film transistor
  • the source of the transistor is connected to the data line
  • the drain of the slave thin film transistor is connected to the slave pixel electrode and the source of the shared thin film transistor
  • the gate of the shared thin film transistor is connected to the scan line
  • the drain of the shared thin film transistor is connected to the common electrode line.
  • the array substrate includes a first metal layer and a second metal layer, wherein the common electrode line of the array substrate is located in the first metal layer, and the data line Located on the second metal layer.
  • the pixel electrodes are all patterned electrodes in the shape of a rice.
  • the embodiments of the present disclosure provide a display device including the above-mentioned liquid crystal display panel.
  • the liquid crystal display panel and the display device provided by the present disclosure are electrically connected to the common electrode layer of the color filter substrate with a portion of the DBS common electrode line located on the periphery of the pixel unit, and the portion of the DBS located inside the pixel unit is common
  • the electrode line is not connected to the common electrode line of the array substrate.
  • FIG. 1 is a schematic top view of the structure of an array substrate in the prior art
  • FIG. 2 is a schematic cross-sectional structure diagram of a liquid crystal display panel provided by an embodiment of the disclosure
  • FIG. 3 is a schematic diagram of a top view structure of an array substrate provided by an embodiment of the disclosure.
  • FIG. 4 is a schematic diagram of a circuit structure of a pixel unit of a liquid crystal display panel provided by an embodiment of the disclosure
  • FIG. 5 is a schematic structural diagram of a display device provided by an embodiment of the disclosure.
  • the present disclosure is directed to the prior art liquid crystal display panel.
  • the voltage of the common electrode line of the array substrate is not equal to the voltage of the common electrode layer of the color filter substrate, which results in the difference between the array substrate and the color film substrate.
  • the conductive foreign matter between the film substrates causes burns on the upper and lower plates of the liquid crystal display panel, causing foreign body sensation, and technical problems of lowering the yield rate. This embodiment can solve this defect.
  • the liquid crystal display panel 100 provided by the present disclosure includes an array substrate 1, a color filter substrate 2 disposed opposite to the array substrate 1, and a color filter substrate 2 disposed on the array substrate 1 and the color filter The liquid crystal layer 3 between the substrates 2.
  • the array substrate 1 includes a first glass substrate 11, a first metal layer M1 and a second metal layer M2 are provided on the first glass substrate 11, wherein the first metal layer M1 includes a plurality of scan lines 12,
  • the second metal layer M2 includes a plurality of data lines 13 and sources and drains (not shown in the figure) constituting thin-film transistors (Thin-film transistors, TFTs), wherein a plurality of the scan lines 12 and a plurality of The data lines 13 are arranged crosswise to define a plurality of pixel units 14, pixel electrodes are arranged in the plurality of pixel units 14, and a plurality of data lines 13 are arranged above the plurality of data lines without a black matrix ( Data Line BM Less, DBS) common electrode line DBS-com.
  • DBS black matrix
  • the DBS common electrode line DBS-com is arranged corresponding to a plurality of the data lines 13, wherein the width of the DBS common electrode line DBS-com is greater than the width of the corresponding data line 13 so that the electric field formed by the DBS common electrode line DBS-com can make the liquid crystal molecules in the liquid crystal layer 3 in an undeflected state, which serves the purpose of shielding light and can replace the liquid crystal display.
  • the material of the DBS common electrode line DBS-com is indium tin oxide (Indium Tin Oxide) Oxide, ITO).
  • the pixel unit 14 includes a red pixel unit R, a green pixel unit G, and a blue pixel unit B that are sequentially and repeatedly arranged, and the DBS common electrode line DBS-com is respectively arranged in the red pixel unit R and the Between the green pixel units G, between the green pixel units G and the blue pixel units B, and between the blue pixel units B and the red pixel units R.
  • the color filter substrate 2 includes a second glass substrate 21 and a common electrode layer CF-com disposed on the second glass substrate 21, wherein a portion of the DBS common electrode line DBS-com located on the periphery of the pixel unit 14 A gold ball 15 is arranged between the com and the common electrode layer CF-com of the color filter substrate 2 to realize the DBS common electrode line DBS-com and the common electrode layer CF of the color filter substrate 2 -com electrical connection, there is no via hole between the part of the DBS common electrode line DBS-com located inside the pixel unit 14 and the common electrode line DBS-com of the array substrate 1, making the DBS common The electrode line DBS-com is not connected to the common electrode line DBS-com of the array substrate 1.
  • the medium that realizes the electrical connection between the DBS common electrode line DBS-com and the common electrode layer CF-com of the color filter substrate 2 should not be limited to the golden ball 15, but may also be of other types.
  • the conductive medium of the present disclosure should not be limited by this.
  • each pixel unit 14 is divided into a main pixel area 141 and a slave pixel area 142.
  • the main pixel area 141 includes a main thin film transistor T1 and a main pixel electrode A1, wherein the main thin film transistor T1
  • the gate is connected to the corresponding scan line 12
  • the source of the main thin film transistor T1 is connected to the corresponding data line 13
  • the drain of the main thin film transistor T1 is connected to the main pixel electrode A1, wherein
  • a first storage capacitor C1 is formed between the main pixel electrode A1 and the common electrode layer CF-com on the color filter substrate 2.
  • the slave pixel area 142 includes a slave thin film transistor T2, a shared thin film transistor T3, and a slave pixel electrode A2.
  • the gate of the slave thin film transistor T2 is connected to the corresponding scan line 12, and the source of the slave thin film transistor T2
  • the data line 13 corresponding to the pixel unit 14 is connected, the drain of the slave thin film transistor T2 is connected to the slave pixel electrode A2, and the gate of the shared thin film transistor T3 is connected to the corresponding scan line 12
  • the source of the shared thin film transistor T3 is connected to the drain of the slave thin film transistor T2, and the source of the shared thin film transistor T3 is connected to the common electrode A-com of the array substrate 11.
  • a second storage capacitor C2 is formed between the secondary pixel electrode A2 and the common electrode layer CF-com of the color filter substrate 2. Specifically, the capacitance values of the first storage capacitor C1 and the second storage capacitor C2 are equal.
  • the main pixel area 141 is driven by the main thin film transistor T1
  • the slave pixel area 142 is driven by the slave thin film transistor T2 and the shared thin film transistor for pulling down the voltage of the slave pixel area 142.
  • T3 drives together.
  • the pattern electrode shapes of the main pixel electrode A1 and the slave pixel electrode A2 are both a m-shape, and the materials of the main pixel electrode A1 and the slave pixel electrode A2 are both ITO.
  • the circuit structure of the pixel unit 14 of the liquid crystal display panel 100 provided by the embodiment of the present disclosure also adopts a 3T pixel structure, that is, the liquid crystal display panel of the embodiment of the present disclosure 100
  • the circuit structure of the pixel unit 14 of the liquid crystal display panel 100 provided by the embodiment of the present disclosure also adopts a 3T pixel structure, that is, the liquid crystal display panel of the embodiment of the present disclosure 100
  • the via hole 16 on the shared thin film transistor T3 is removed, so that the voltage of the DBS common electrode line DBS-com is not equal to the common electrode line A-com of the array substrate 1
  • the DBS common electrode line The voltage of DBS-com is equal to the voltage of the common electrode layer CF-com of the color filter substrate 2, that is, the DBS common electrode line DBS
  • an embodiment of the present disclosure also provides a display device 1000, the display device is a liquid crystal display device, the display device includes the above-mentioned liquid crystal display panel 100 and provides a backlight source for the liquid crystal display panel 100
  • the display device 1000 can be any product or component with display function such as a mobile phone, a tablet computer, a television, a digital camera, etc.
  • the display device 1000 has the technical effects of the liquid crystal display panel 100, I will not repeat them here.
  • the liquid crystal display panel and the display device provided by the embodiments of the present disclosure are electrically connected to the common electrode layer CF-com of the color film substrate by electrically connecting a portion of the DBS common electrode line DBS-com located at the periphery of the pixel unit and located in the pixel unit
  • the inner part of the DBS common electrode line DBS-com is not connected to the common electrode line A-com of the array substrate.
  • the DBS common electrode is reduced when the liquid crystal display panel performs optical phase matching.
  • the voltage difference between the line DBS-com and the common electrode layer CF-com of the color filter substrate prevents burns caused by conductive foreign objects, reduces the foreign body sensation of the liquid crystal display panel, and improves the yield.

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Abstract

一种液晶显示面板（100）及显示装置（1000），液晶显示面板（100）通过将位于像素单元（14）外围的部分DBS公共电极线（DBS-com）与彩膜基板（2）的公共电极层（CF-com）电连接，且位于像素单元（14）内侧的部分DBS公共电极线（DBS-com）与阵列基板（1）的公共电极线（A-com）不连接，进行光配相时，减小DBS公共电极线（DBS-com）与公共电极层（CF-com）之间的电压差，避免导电异物造成的烧伤，降低异物感，提升良率。

Description

液晶显示面板及显示装置 技术领域
本揭示涉及显示技术领域，尤其涉及一种液晶显示面板及显示装置。
 背景技术
如图1所示为现有的采用数据线上方无黑色矩阵 (Data Line BM Less，DBS)设计的阵列基板1＇结构的俯视示意图，现有的液晶显示面板一般包括阵列基板1＇、与阵列基板1＇相对贴合设置的彩膜基板（图中未示出）以及设置于所述阵列基板1＇与所述彩膜基板之间的液晶层（图中未示出），其中，所述阵列基板1＇包括多条扫描线12与多条数据线13，所述栅极线12与所述数据线13交叉设置以限定多个像素单元，在所述像素单元内设有像素电极，同时，所述阵列基板采用图4所示的3T像素单元结构。在所述数据线13上方设置有所述DBS公共电极线，所述DBS公共电极线经由所述共享薄膜晶体管的过孔16与所述阵列基板1＇上的公共电极线A-com电连接，所述过孔16通过氧化铟锡(Indium Tin Oxide，ITO)桥接，进而使得所述DBS公共电极线与所述彩膜基板上的公共电极层的电位相同，所以可以使液晶分子保持未偏转的状态，起到遮光的目的，进而能够替代所述液晶显示面板中与所述数据线13对应的黑色矩阵(Black Matrix，BM)。
然而，在对所述液晶显示面板进行光配相时，存在所述阵列基板1＇的公共电极线A-com的电压与所述彩膜基板的公共电极层CF-com的电压不相等的可能性，因此会导致所述DBS公共电极线与所述彩膜基板的所述公共电极层CF-com之间形成电场，进而导致位于阵列基板1＇与所述彩膜基板之间的导电异物造成所述液晶显示面板的上下板烧伤，降低良率。
因此，需要提供一种新的液晶显示面板及液晶显示装置，来解决上述技术问题。
 技术问题
本揭示提供一种液晶显示面板及显示装置，解决了当液晶显示面板进行光配相时，由于阵列基板的公共电极线的电压与彩膜基板的公共电极层的电压不相等，导致DBS公共电极线与彩膜基板的公共电极层之间形成电场，进而导致位于阵列基板与彩膜基板之间的导电异物造成液晶显示面板的上下板烧伤，造成异物感，降低良率的技术问题。
 技术解决方案
为解决上述问题，本揭示提供的技术方案如下：
本揭示实施例提供一种液晶显示面板，包括阵列基板、与所述阵列基板相对设置的彩膜基板、以及设置于所述阵列基板与所述彩膜基板之间的液晶层；其中所述阵列基板包括：
多条扫描线；
与多条所述扫描线交叉设置的多条数据线；
由多条所述扫描线与多条所述数据线限定的多个像素单元，多个所述像素单元内设置有像素电极，所述像素电极均为米字形的图案电极；以及
设置于多条所述数据线上方的多条DBS公共电极线，所述DBS公共电极线的宽度大于所述数据线的宽度；
其中位于所述像素单元外围的部分所述DBS公共电极线与所述彩膜基板的公共电极层电连接，位于所述像素单元内侧的部分所述DBS公共电极线与所述阵列基板的公共电极线不连接。
在本揭示提供的液晶显示面板中，所述DBS公共电极线的材料为氧化铟锡。
在本揭示提供的液晶显示面板中，位于所述像素单元外围的部分所述DBS公共电极线与所述彩膜基板的公共电极层之间设置有金球以实现电连接。
在本揭示提供的液晶显示面板中，所述像素单元分为主像素区与从像素区。
在本揭示提供的液晶显示面板中，所述主像素区包括主薄膜晶体管和主像素电极，其中所述主薄膜晶体管的栅极与所述扫描线连接，所述主薄膜晶体管的源极与所述数据线连接，所述主薄膜晶体管的漏极与所述主像素电极连接。
在本揭示提供的液晶显示面板中，所述从像素区包括从薄膜晶体管、共享薄膜晶体管和从像素电极，其中所述从薄膜晶体管的栅极与所述扫描线连接，所述从薄膜晶体管的源极与所述数据线连接，所述从薄膜晶体管的漏极与所述从像素电极及所述共享薄膜晶体管的源极连接，所述共享薄膜晶体管的栅极与所述扫描线连接，所述共享薄膜晶体管的漏极与所述公共电极线连接。
在本揭示提供的液晶显示面板中，所述阵列基板包括第一金属层与第二金属层，其中所述阵列基板的所述公共电极线位于所述第一金属层，所述数据线位于所述第二金属层。
本揭示实施例提供一种液晶显示面板，包括阵列基板、与所述阵列基板相对设置的彩膜基板、以及设置于所述阵列基板与所述彩膜基板之间的液晶层；其中，所述阵列基板包括：
多条扫描线；
与多条所述扫描线交叉设置的多条数据线；
由多条所述扫描线与多条所述数据线限定的多个像素单元，多个所述像素单元内设置有像素电极；以及
设置于多条所述数据线上方的多条DBS公共电极线；
其中位于所述像素单元外围的部分所述DBS公共电极线与所述彩膜基板的公共电极层电连接，位于所述像素单元内侧的部分所述DBS公共电极线与所述阵列基板的公共电极线不连接。
在本揭示实施例提供的液晶显示面板中，所述DBS公共电极线的宽度大于所述数据线的宽度。
在本揭示实施例提供的液晶显示面板中，所述DBS公共电极线的材料为氧化铟锡。
在本揭示实施例提供的液晶显示面板中，位于所述像素单元外围的部分所述DBS公共电极线与所述彩膜基板的公共电极层之间设置有金球以实现电连接。
在本揭示实施例提供的液晶显示面板中，所述像素单元分为主像素区与从像素区。
在本揭示实施例提供的液晶显示面板中，所述主像素区包括主薄膜晶体管和主像素电极，其中所述主薄膜晶体管的栅极与所述扫描线连接，所述主薄膜晶体管的源极与所述数据线连接，所述主薄膜晶体管的漏极与所述主像素电极连接。
在本揭示实施例提供的液晶显示面板中，所述从像素区包括从薄膜晶体管、共享薄膜晶体管和从像素电极，其中所述从薄膜晶体管的栅极与所述扫描线连接，所述从薄膜晶体管的源极与所述数据线连接，所述从薄膜晶体管的漏极与所述从像素电极及所述共享薄膜晶体管的源极连接，所述共享薄膜晶体管的栅极与所述扫描线连接，所述共享薄膜晶体管的漏极与所述公共电极线连接。
在本揭示实施例提供的液晶显示面板中，所述阵列基板包括第一金属层与第二金属层，其中所述阵列基板的所述公共电极线位于所述第一金属层，所述数据线位于所述第二金属层。
在本揭示实施例提供的液晶显示面板中，所述像素电极均为米字形的图案电极。
本揭示实施例提供一种显示装置，包括上述液晶显示面板。
 有益效果
本揭示的有益效果为：本揭示提供的液晶显示面板及显示装置，通过将位于像素单元外围的部分DBS公共电极线与彩膜基板的公共电极层电连接，且位于像素单元内侧的部分DBS公共电极线与阵列基板的公共电极线不连接，在不变更像素单元整体设计架构前提下，使得当液晶显示面板进行光配相时，减小DBS公共电极线与彩膜基板的公共电极层之间的电压差，避免导电异物造成的烧伤，降低了液晶显示面板的异物感，提升了良率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有技术的阵列基板的俯视结构示意图；
图2为本揭示实施例提供的一种液晶显示面板的剖视结构示意图；
图3为本揭示实施例提供的一种阵列基板的俯视结构示意图；
图4为本揭示实施例提供的一种液晶显示面板的像素单元的电路结构示意图；
图5为本揭示实施例提供的一种显示装置的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。
本揭示针对现有技术的液晶显示面板，当液晶显示面板进行光配相时，由于阵列基板的公共电极线的电压与彩膜基板的公共电极层的电压不相等，从而导致位于阵列基板与彩膜基板之间的导电异物造成液晶显示面板的上下板烧伤，造成异物感，降低良率的技术问题。本实施例能够解决该缺陷。
如图2、图3所示，本揭示提供的液晶显示面板100，包括阵列基板1、与所述阵列基板1相对设置的彩膜基板2、以及设置于所述阵列基板1与所述彩膜基板2之间的液晶层3。
所述阵列基板1包括第一玻璃基板11，在所述第一玻璃基板11上设置有第一金属层M1与第二金属层M2，其中所述第一金属层M1包括多条扫描线12，所述第二金属层M2包括多条数据线13以及构成薄膜晶体管（Thin-film transistor，TFT）的源极及漏极（图中未视出），其中多条所述扫描线12与多条所述数据线13交叉设置以限定出多个像素单元14，多个所述像素单元14内设置有像素电极，以及在多条所述数据线13上方设置有多条数据线上方无黑色矩阵 (Data Line BM Less，DBS)公共电极线DBS-com。
具体地，所述DBS公共电极线DBS-com与多条所述数据线13对应设置，其中所述DBS公共电极线DBS-com的宽度大于与其对应的所述数据线13的宽度，使得所述液晶显示面板100正常工作时，所述DBS公共电极线DBS-com形成的电场可以使得所述液晶层3中的液晶分子处于未偏转的状态，起到遮光的目的，进而能够替代所述液晶显示面板100中与所述数据线13对应的黑色矩阵(Black Matrix，BM)。进一步地，所述DBS公共电极线DBS-com的材料为氧化铟锡(Indium Tin Oxide，ITO)。
具体地，所述像素单元14包括依次重复排列的红色像素单元R、绿色像素单元G和蓝色像素单元B，所述DBS公共电极线DBS-com分别设置在所述红色像素单元R和所述绿色像素单元G之间、所述绿色像素单元G和所述蓝色像素单元B之间、所述蓝色像素单元B和所述红色像素单元R之间。
所述彩膜基板2包括第二玻璃基板21以及设置于所述第二玻璃基板21上的公共电极层CF-com，其中，位于所述像素单元14外围的部分所述DBS公共电极线DBS-com与所述彩膜基板2的所述公共电极层CF-com之间设置有金球15，以实现所述DBS公共电极线DBS-com与所述彩膜基板2的所述公共电极层CF-com的电连接，位于所述像素单元14内侧的部分所述DBS公共电极线DBS-com与所述阵列基板1的公共电极线DBS-com之间未设置有过孔，使得所述DBS公共电极线DBS-com与所述阵列基板1的公共电极线DBS-com之间不连接。当然，实现所述DBS公共电极线DBS-com与所述彩膜基板2的所述公共电极层CF-com之间电连接的介质不应仅限制为所述金球15，也可为其他类型的导电介质，本揭示实施例不应以此为限制。
如图4所示，每个所述像素单元14分为主像素区141与从像素区142，所述主像素区141包括主薄膜晶体管T1和主像素电极A1，其中所述主薄膜晶体管T1的栅极与对应的所述扫描线12连接，所述主薄膜晶体管T1的源极与对应的所述数据线13连接，所述主薄膜晶体管T1的漏极与所述主像素电极A1连接，其中，所述主像素电极A1还与所述彩膜基板2上的所述公共电极层CF-com之间构成第一储存电容C1。
所述从像素区142包括从薄膜晶体管T2和共享薄膜晶体管T3以及从像素电极A2，所述从薄膜晶体管T2的栅极与对应的所述扫描线12连接，所述从薄膜晶体管T2的源极与本像素单元14对应的所述数据线13连接，所述从薄膜晶体管T2的漏极与所述从像素电极A2连接，所述共享薄膜晶体管T3的栅极与对应的所述扫描线12连接，所述共享薄膜晶体管T3的源极与所述从薄膜晶体管T2的漏极连接，所述共享薄膜晶体管T3的源极与所述阵列基板11的所述公共电极A-com连接。其中，所述从像素电极A2还与所述彩膜基板2的所述公共电极层CF-com之间形成第二存储电容C2。具体地，所述第一存储电容C1和所述第二存储电容C2的电容值相等。
也就是说，所述主像素区141由所述主薄膜晶体管T1驱动，所述从像素区142由所述从薄膜晶体管T2和用于拉低所述从像素区142电压的所述共享薄膜晶体管T3共同驱动。
具体地，继续参考图3，所述主像素电极A1与所述从像素电极A2的图案电极形状均为米字形，且所述主像素电极A1与所述从像素电极A2的材料均为ITO。
因此，与现有技术相比，本揭示实施例提供的所述液晶显示面板100的所述像素单元14的电路结构同样采用3T像素结构，也就是说，本揭示实施例的所述液晶显示面板100在不变更所述像素单元整体设计架构的前提下，当进行光配相时，通过将位于所述像素单元14内侧的部分DBS公共电极线DBS-com与所述阵列基板1的公共电极线A-com不连接，因而去除了所述共享薄膜晶体管T3上的所述过孔16，从而使得所述DBS公共电极线DBS-com的电压不等于所述阵列基板1的公共电极线A-com的电压，又由于位于所述像素单元14外围的部分所述DBS公共电极线DBS-com与所述彩膜基板2的所述公共电极层CF-com保持电连接，因此所述DBS公共电极线DBS-com的电压等于所述彩膜基板2的所述公共电极层CF-com的电压，即所述DBS公共电极线DBS-com与所述彩膜基板2的所述公共电极层CF-com之间的压差为0，则若所述阵列基板1与所述彩膜基板2之间存在导电异物，例如导电粒子等，所述导电异物并不会受到电压驱动，因此可有效避免所述导线异物通电所造成的所述液晶显示面板100上下板的烧伤风险，从而降低了所述液晶显示面板100的异物感，提升了良率。
如图5所示，本揭示实施例还提供了一种显示装置1000，所述显示装置为液晶显示装置，所述显示装置包括上述的液晶显示面板100以及为所述液晶显示面板100提供背光源的背光模组200，所述显示装置1000可为手机、平板电脑、电视机、数码相机等任何具有显示功能的产品或部件所述显示装置1000具有所述液晶显示面板100所具有的技术效果，在此不再一一赘述。
有益效果为：本揭示实施例提供的液晶显示面板及显示装置，通过将位于像素单元外围的部分DBS公共电极线DBS-com与彩膜基板的公共电极层CF-com电连接，且位于像素单元内侧的部分DBS公共电极线DBS-com与阵列基板的公共电极线A-com不连接，在不变更像素单元整体设计架构前提下，使得当液晶显示面板进行光配相时，减小DBS公共电极线DBS-com与彩膜基板的公共电极层CF-com之间的电压差，避免导电异物造成的烧伤，降低了液晶显示面板的异物感，提升了良率。
综上所述，虽然本揭示已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。

Claims (17)

  1. 一种液晶显示面板，包括阵列基板、与所述阵列基板相对设置的彩膜基板、以及设置于所述阵列基板与所述彩膜基板之间的液晶层；其中所述阵列基板包括：
    多条扫描线；
    与多条所述扫描线交叉设置的多条数据线；
    由多条所述扫描线与多条所述数据线限定的多个像素单元，多个所述像素单元内设置有像素电极，所述像素电极均为米字形的图案电极；以及
    设置于多条所述数据线上方的多条DBS公共电极线，所述DBS公共电极线的宽度大于所述数据线的宽度；
    其中位于所述像素单元外围的部分所述DBS公共电极线与所述彩膜基板的公共电极层电连接，位于所述像素单元内侧的部分所述DBS公共电极线与所述阵列基板的公共电极线不连接。
  2. 根据权利要求1所述的液晶显示面板，其中所述DBS公共电极线的材料为氧化铟锡。
  3. 根据权利要求1所述的液晶显示面板，其中位于所述像素单元外围的部分所述DBS公共电极线与所述彩膜基板的公共电极层之间设置有金球以实现电连接。
  4. 根据权利要求1所述的液晶显示面板，其中所述像素单元分为主像素区与从像素区。
  5. 根据权利要求4所述的液晶显示面板，其中所述主像素区包括主薄膜晶体管和主像素电极，其中所述主薄膜晶体管的栅极与所述扫描线连接，所述主薄膜晶体管的源极与所述数据线连接，所述主薄膜晶体管的漏极与所述主像素电极连接。
  6. 根据权利要求4所述的液晶显示面板，其中所述从像素区包括从薄膜晶体管、共享薄膜晶体管和从像素电极，其中所述从薄膜晶体管的栅极与所述扫描线连接，所述从薄膜晶体管的源极与所述数据线连接，所述从薄膜晶体管的漏极与所述从像素电极及所述共享薄膜晶体管的源极连接，所述共享薄膜晶体管的栅极与所述扫描线连接，所述共享薄膜晶体管的漏极与所述公共电极线连接。
  7. 根据权利要求1所述的液晶显示面板，其中所述阵列基板包括第一金属层与第二金属层，其中所述阵列基板的所述公共电极线位于所述第一金属层，所述数据线位于所述第二金属层。
  8. 一种液晶显示面板，包括阵列基板、与所述阵列基板相对设置的彩膜基板、以及设置于所述阵列基板与所述彩膜基板之间的液晶层；其中所述阵列基板包括：
    多条扫描线；
    与多条所述扫描线交叉设置的多条数据线；
    由多条所述扫描线与多条所述数据线限定的多个像素单元，多个所述像素单元内设置有像素电极；以及
    设置于多条所述数据线上方的多条DBS公共电极线；
    其中位于所述像素单元外围的部分所述DBS公共电极线与所述彩膜基板的公共电极层电连接，位于所述像素单元内侧的部分所述DBS公共电极线与所述阵列基板的公共电极线不连接。
  9. 根据权利要求8所述的液晶显示面板，其中所述DBS公共电极线的宽度大于所述数据线的宽度。
  10. 根据权利要求9所述的液晶显示面板，其中所述DBS公共电极线的材料为氧化铟锡。
  11. 根据权利要求8所述的液晶显示面板，其中位于所述像素单元外围的部分所述DBS公共电极线与所述彩膜基板的公共电极层之间设置有金球以实现电连接。
  12. 根据权利要求8所述的液晶显示面板，其中所述像素单元分为主像素区与从像素区。
  13. 根据权利要求12所述的液晶显示面板，其中所述主像素区包括主薄膜晶体管和主像素电极，其中所述主薄膜晶体管的栅极与所述扫描线连接，所述主薄膜晶体管的源极与所述数据线连接，所述主薄膜晶体管的漏极与所述主像素电极连接。
  14. 根据权利要求12所述的液晶显示面板，其中所述从像素区包括从薄膜晶体管、共享薄膜晶体管和从像素电极，其中所述从薄膜晶体管的栅极与所述扫描线连接，所述从薄膜晶体管的源极与所述数据线连接，所述从薄膜晶体管的漏极与所述从像素电极及所述共享薄膜晶体管的源极连接，所述共享薄膜晶体管的栅极与所述扫描线连接，所述共享薄膜晶体管的漏极与所述公共电极线连接。
  15. 根据权利要求8所述的液晶显示面板，其中所述阵列基板包括第一金属层与第二金属层，其中所述阵列基板的所述公共电极线位于所述第一金属层，所述数据线位于所述第二金属层。
  16. 根据权利要求8所述的液晶显示面板，其中所述像素电极均为米字形的图案电极。
  17. 一种显示装置，其特征在于，包括权利要求8所述的液晶显示面板。
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