CN105428371A - 显示面板与薄型晶体管阵列基板 - Google Patents

显示面板与薄型晶体管阵列基板 Download PDF

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CN105428371A
CN105428371A CN201510989784.XA CN201510989784A CN105428371A CN 105428371 A CN105428371 A CN 105428371A CN 201510989784 A CN201510989784 A CN 201510989784A CN 105428371 A CN105428371 A CN 105428371A
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substrate
via hole
metal layer
frequency signal
display floater
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CN105428371B (zh
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杜鹏
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/906,622 priority patent/US10451945B2/en
Priority to PCT/CN2016/070602 priority patent/WO2017107256A1/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract

一种显示面板包括第一基板和第二基板，所述第一基板上设置有薄膜晶体管；所述显示面板具有一非显示区，所述非显示区包括第一金属层，一第二金属层形成的一频率信号线，位于所述第一金属层上，且包括一过孔(contact？hole)。一导电电极，至少有一部分位于所述过孔中，以及一光阻间隙子，用于间隔所述第一基板和所述第二基板，所述光阻间隙子覆盖所述导电电极。光阻间隙子系由絶缘材料所制成，并用于间隔所述第一基板和所述第二基板和一彩色滤片，位于所述过孔中。

Description

显示面板与薄型晶体管阵列基板
技术领域
本发明提出一显示面板与薄型晶体管阵列基板，特别是用于薄膜晶体管液晶显示器(thinfilmtransistor-liquidcrystaldisplay,TFT-LCD)的显示面板与薄型晶体管阵列基板。
背景技术
现在的面板设计中，窄边框已经日益流行，窄边框的产品在市场上也具有更强的竞争力。
在垂直排列(verticalalignment,VA)模式的TFT-LCD面板中，彩色滤片(colorfilter,CF)对于液晶电容的行程，以及控制液晶分子偏转是重要的，但由于所连接的IC只和TFT基板连接，转移板(transferpad)可以将CF的公共电极的信号由TFT基板传递到CF基板，是VA模式显示面板必不可少的一个结构。通常CF的公共电极是在转移处通过金球(AuBall)传递到CF基板上，转移板的尺寸一般都比较大，会占用较多的外围走线空间，对现有的窄边框设计是非常不利的。为了减小转移板的尺寸，常会使用密封金(AuinSeal)的方式，就是将金球分散在框胶中，均匀的涂布在面板的周边位置，通过较小的转移板将CF的公共电极信号传递到CF基板上。这种方式的难点在于密封处含有导电物质，除了CF的公共电极之外，不能和任何其他信号的过孔(contacthole)接触，否则将导致不同信号的短路，使面板不能正常工作。对于阵列栅极驱动电路(GOA)架构的面板这个问题更加严重。此是因为GOA电路的栅极侧有很多频率信号线，一般情况下频率信号线都会和框胶重迭，而且频率信号在线也会有大量的过孔将频率信号和GOA电路连接，在窄边框面板使用的密封金技术会导致GOA电路中的频率信号短路的问题。
图1是是传统阵列栅极驱动电路架构的面板栅极侧外围走线的示意图，对于采用了GOA架构的面板来讲，GOA电路所使用的频率信号，如图1中的CK1、CK2，数量较多，在栅极侧需要占用较多的空间。频率信号线上都需要过孔(contacthole)10将频率信号传递到GOA电路中，如果这些过孔10与金球(无图示)接触，则可能导致不同信号之间相互短路，使得GOA电路不能正常工作。
图2是图1中的频率信号线的剖面图，如图2所示，通常GOA电路2都是由第一金属层20制作，通过过孔10导通至第二金属层21所形成的频率走线。在过孔10处，金属走线上方的绝缘层通过干蚀刻被挖开，氧化铟锡电极22将不同层的金属走线连接起来。氧化铟锡电极22上是频率信号电位，如果直接和密封处中的金球(无图示)接触，将会发生频率信号和CF的公共电极信号短路，使得整个面板不能正常工作。
发明内容
为了解决频率信号相互短路的问题，本发明优化了现有的面板设计，结合现在正在开发中的阵列(onarray)光阻间隙子技术，重新设计了外围的光阻间隙子设计，解决GOA电路在应用密封金方式时出现的频率信号线之间相互短路的问题。
依据本发明一实施例，提出了一种显示面板包括第一基板和第二基板，所述第一基板上设置有薄膜晶体管；所述显示面板具有一非显示区，所述非显示区包括第一金属层；一过孔(contacthole)，位于所述第一金属层上；一导电电极，至少有一部分位于所述过孔中；一光阻间隙子(photospacer,PS)用于间隔所述第一基板和所述第二基板，所述光阻间隙子覆盖所述导电电极；以及第二金属层，经由所述过孔上的所述导电电极电连接所述第一金属层。
较佳地，所述光阻间隙子完全覆盖所述导电电极。
较佳地，所述光阻间隙子是由绝缘材料制成。
较佳地，所述导电电极的材料为氧化铟锡(ITO)。
较佳地，所述光阻间隙子用于间隔所述第一基板和所述第二基板和一彩色滤片，位于所述过孔中。
较佳地，所述第二金属层构成一频率信号线。
本发明在GOA面板上实现密封金的结构，将面板边框的尺寸缩窄，进一步缩减GOA面板的边框尺寸，符合现在的市场发展趋势。
为使本发明的上述目的、特征和优点能更明显易懂，下文特举较佳实施例并配合附图做详细说明。
附图说明
图1是是传统阵列栅极驱动电路架构的面板栅极侧外围走线的示意图；
图2是图1的频率信号线的过孔的剖面图；
图3是依据本发明一实施例的频率走线的布局示意图；以及
图4是图3的频率信号线的过孔的剖面图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
图3是依据本发明一实施例的频率走线的布局示意图，如图3所示，本发明具有频率信号线CK1＇，CK2＇形成在一薄型晶体管阵列基板的一非显示区。本发明使用了光阻间隙子30，光阻间隙子習用是形成在彩色滤片上以适当间隔彩色滤片和薄型晶体管阵列基板。本發明則是將光阻间隙子30形成在薄型晶体管阵列基板上，不仅用来适当间隔彩色滤片和薄型晶体管阵列基板，同時亦用於将和频率信号线CK1＇相连的GOA电路4(图4)上的过孔10＇完全覆盖，特别是光阻间隙子30的图案将过孔10＇处的氧化铟锡电极22＇(图4)全部覆盖。由于光阻间隙子30本身是由绝缘材料制成，因此在使用密封金制程时避免了频率信号线和密封胶中的金球(无图示)相互接触，防止了不同信号之间的短路发生，另外，本发明不仅仅是针对上述GOA频率信号线CK＇，而是皆适用于类似结构的过孔。
图4是图3中的频率信号线的剖面示意图，如图4所示，GOA电路4是由第一金属层20＇制作，通过过孔10＇来导通第二金属层21＇所形成的频率信号线和GOA电路4。在过孔10＇处，金属走线上方的绝缘层通过干蚀刻被挖开，氧化铟锡电极22＇被形成在过孔10＇中并延伸至过孔10＇之外，以将不同层的金属走线(即第一和第二金属层20＇，21＇)连接起来。光阻间隙子30不仅将整个过孔10＇都全部覆盖，同时亦覆盖氧化铟锡电极22＇向外延伸的最远程处，特别是如图中虚线框中标识的位置，以将整个氧化铟锡电极22＇都全部覆盖。光阻间隙子30的图案比过孔处的氧化铟锡电极22＇的图案尺寸更大，因此可完全覆盖整个氧化铟锡电极22＇。光阻间隙子30本身是绝缘的，而且具有较大的厚度，当使用了密封金的制程时，光阻间隙子30就可以将频率信号线与金球和CF的公共电极信号线隔离开来，防止它们发生短路。这样就可以将密封金制程应用到GOA架构的面板上，有利于GOA面板边框尺寸的缩减，对窄边框的设计是非常有利的。
本发明在GOA面板上实现密封金的结构，将面板边框的尺寸缩窄，进一步缩减GOA面板的边框尺寸，符合现在的市场发展趋势。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (9)

1.一种显示面板，其特征在于，包括：
第一基板和第二基板，所述第一基板上设置有薄膜晶体管；所述显示面板具有一非显示区，所述非显示区包括：
第一金属层；
过孔，位于所述第一金属层上；
导电电极，至少有一部分位于所述过孔中；
光阻间隙子，用于间隔所述第一基板和所述第二基板，所述光阻间隙子覆盖所述导电电极；以及
第二金属层，经由所述过孔上的所述导电电极电连接所述第一金属层。
2.如权利要求1所述的显示面板，其特征在于，所述光阻间隙子完全覆盖所述导电电极。
3.如权利要求1所述的显示面板，其特征在于，所述光阻间隙子是由绝缘材料制成。
4.如权利要求1所述的显示面板，其特征在于，所述导电电极的材料为氧化铟锡。
5.如权利要求1所述的显示面板，其特征在于，所述光阻间隙子用于间隔所述第一基板和所述第二基板和一彩色滤片，位于所述过孔中。
6.如权利要求1所述的显示面板，其特征在于，所述第二金属层构成一频率信号线。
7.一种薄型晶体管阵列基板，具有一非显示区，其特征在于，所述非显示区包括：
一第一金属层；以及
一频率信号线由第二金属层所制成，并位于所述第一金属层上；
一过孔形成在该第一金属层上；
一氧化铟锡电极，至少有一部分位于所述过孔中，并连接所述第一金属层和所述第二金属层；以及
一光阻间隙子用于间隔所述薄型晶体管阵列基板和一彩色滤片，至少位于所述过孔中以密封在所述过孔中的所述氧化铟锡电极。
8.如权利要求7所述的薄型晶体管阵列基板，其特征在于，所述光阻间隙子的尺寸大于氧化铟锡电极的尺寸。
9.如权利要求7所述的薄型晶体管阵列基板，其特征在于，所述光阻间隙子是由绝缘材料制成。
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